VNTCTH C R V - Active Clamp Flyback | Ultimate Power Density

TEST REPORT Silanna Semiconductor Proprietary and Confidential Page 1 Patents: www.PowerDensity.com/patents Document 11075 Ver. 1.0

TEST REPORT SZ-RD12-65W

EVB Description

This test report of SZ-RD12-65W evaluation board

describes a 65 W universal input offline power supply with

programmable output voltage (5 V/3.25 A, 9 V/3.25 A, 15

V/3.25 A, 20 V/3.25 A). The power supply uses SZ1130

(Flyback PWM controller with integrated active clamp

circuit) IC, GaN Systems GS-065-008-1-L (650 V E-mode

GaN Transistor), and Weltrend WT6633P USB PD

controller. This design shows the high-power density and

efficiency that can be achieved due to the high level of

integration of the SZ1130 controller.

This document contains the power supply specification,

schematic, bill-of-materials, transformer documentation,

printed circuit layout, and performance data.

Key Specs Schematics

Input 90-265 Vac

Output Voltages 5 V, 9 V, 15 V, 20 V

Max Output Current 3.25 A

Max Output Power 65 W

Output Port USB-PD

Efficiency > 94% Full Power Efficiency

SZ1130 Features

▪ Integrated High Voltage Active Clamp FET,Active Clamp Driver, and Start-up Regulator

▪ Capable of Over 94% Efficiency

▪ Flat Efficiency Across Universal (90-265 VAC)Input Voltage and Load

▪ Tight Switching Frequency Regulation forImproved Input EMI Filter Utilization

▪ Up to 140 kHz Switching Frequency Operation

▪ OptiModeTM Cycle-by-Cycle Adaptive DigitalControl

▪ Multi-Mode Operation (Burst Mode, Quasi-Resonant, Valley Mode Switching)

▪ Advanced Valley Mode Switching for low EMI

▪ Self-Tuning Valley Detection

▪ OTP, UVLO, OVLO, PCL, OPP and OSCProtections

▪ <50mW No Load Power Consumption of the IC

▪ Up to 65 W Output Power

Applications

▪ High-Power-Density USB-PD AC/DC PowerSupplies

VBULK_S (15)

OOVP_S (16)

V5OUT (13)

GND (6)

BOOT_CL (4)

FB (12)

ISENSE COMPARATORS

OptiM

PulseLink Encoder/Decoder

Startup Regulator

VISNS_PEAK

VOOVP_TH

OOVPCOMPARATOR

SW (3)

V10 (7)

ISNS (11)GATE (8)

Main Switch DriverActive Clamp

Driver

Digital

OptiMode

VBULK COMPARATORS

VBULK_REFs

TEMP (9)

Primary

GaN SystemsGS-065-008-1-L

Active Clamp FET

V10

VNTCTH/VNTCR

VAUX_S (14)NTC COMPARATOR

QR COMPARATOR

CLAMP (1)

Sync Rec

Secondary

ADC

V5OUT

VBULK

RFB

CV5OUT

CA

Regulator1

CC*

RC2

RC1

RB2

RB1

CBST1RSENSE

RA2

RA1

CV10

Secondary FET

COUT

VOUT

NC (10)

VOUT

CBULK

RT2

DAUX*

DBST

RT1

DCL*

CB2

CA2

RDAMP*

VA

ZBST

Auxiliary

5V LDO

WAKE COMPARATOR

VWAKE_FTH /VWAKE_RTH

RGATE*

DGATERBST

CBST2

CBST3 RF

CF

Bootstrap Charging Circuit *

-t 0

[n]Silanna Semiconductor

SZ1130-00

http://www.powerdensity.com/patents


Silanna Semiconductor Proprietary and Confidential Page 2 For more information: www.PowerDensity.com Document 11075 Ver. 1.0

Warning

Disclaimers:

1. Caution – High Voltage Operation: Lethal high voltages are present when this evaluation board ispowered from AC mains. Improper contact with high voltages could lead to electrical shock, burnand/or fire hazards, risking property damage, personal injury, and death.

2. Evaluation Purpose Only: This evaluation board is intended for evaluation purpose only and not forcommercial use. Care must be taken when testing the board, and an isolation transformer should beutilized.

3. Patents: The evaluation board design, along with circuits shown in this test report, may be covered byone or more U.S. and foreign existing/pending patents.

http://www.powerdensity.com/



Contents

EVB Description .................................................. 1

SZ1130 Features ................................................ 1

Applications ......................................................... 1

Warning ............................................................... 2

Power Supply Specifications ............................... 4

SZ-RD12-65W Board Pictures ............................ 5

Schematic ........................................................... 6

Circuit Description ............................................... 7

Input Protection ........................................................ 7 EMI Filtering.............................................................. 7 Fault Protections ....................................................... 7

PCB Layout ......................................................... 8

PCB Prints ................................................................ 8 Bill of Materials (BOM) ...................................... 11

Transformer Specification.................................. 14

Common-Mode Choke Specification ................. 15

Performance Data ............................................. 16

Electrical Data......................................................... 16 Efficiency Graphs .............................................. 19

No-Load Power Consumption ........................... 20

Key Waveforms ...................................................... 21 Conducted EMI Scans ....................................... 22

Thermal Measurements .......................................... 24 Revision History ................................................ 26

Hardware Info.................................................... 26

Tables

TABLE 1: SZ1130 RECOVERY BEHAVIOR ................ 7 TABLE 2: TRANSFORMER MATERIAL LISTS ............ 14 TABLE 3: COMMON-MODE CHOKE MATERIAL LISTS

................................................................... 15 TABLE 4: LOAD EFFICIENCY REQUIREMENTS......... 16 TABLE 5: NO-LOAD POWER CONSUMPTION ........... 20




Power Supply Specifications

The evaluation board performance data presented in this report exceeds the power supply specifications listed in the following table.

Description Symbol Min. Typ. Max. Units Comments

Input

Voltage Vin 90 115/230 265 VAC 2 Wire Input

Frequency fline 47 60/50 63 Hz

Efficiency

5 V/3.25 A η5V/3.25A 90 %

@ 115 Vac, 25 °C ambient

9 V/3.25 A η9V/3.25A 93 %

15 V/3.25 A η15V/3.25A 93 %

20 V/3.25 A η20V/3.25A 93 %

4-Point Ave Efficiency

5 V ηave_5V 82.37 %

CoC version 5 tier 2 4-point (25%, 50%, 75%,

100%) average efficiency

9 V ηave_9V 87.60 %

15 V ηave_15V 88.99 %

20 V ηave_20V 89.16 %

No-Load Input Power

Pin 75 mW @ 230 Vac, 25 °C

ambient

Programmable Output Voltage

VOUT 5 20 V

Environmental Conducted EMI

Meets CISPR22B/EN55022

Ambient Temperature

TAMB 0 40 °C No airflow, sea level.

NOTE: The circuit board needs to be evaluated for additional tests, such as ESD and Line Surge to use the evaluation board design presented in this test report as a charger/adapter. Furthermore, the layout of the board needs to be adjusted according to the target shape and form factor of the end application.




SZ-RD12-65W Board Pictures

Figure 1: Top Side of the EVB

Figure 2: Bottom Side of the EVB




Schematic

Figure 3: 65W Schematic

GaN daughter

board




Circuit Description

Input Protection

The design incorporates a slow-acting input fuse (F1) as a form of protection in case of destructive failure of any of the

downstream components. Furthermore, it has a varistor (RV1) connected between the line and neutral to absorb line surges

and minimize the voltage overshoot seen by the downstream converter components. In addition, there is a footprint for an

inrush current limiter (RT1) (negative temperature coefficient resistor) for applications which require attenuation of the inrush

current.

EMI Filtering

To meet the target EN55022 conducted EMI specification with sufficient margin with the least number of components and the

highest power processing efficiency, the design utilizes an input filter consisting of an x-capacitor (C1) and a single common-

mode choke (L1) as well as transformer (T1) construction for better EMI performance.

Fault Protections

The evaluation board features Hiccup Mode Fault Protection using SZ1130-00. Under all applicable fault conditions, the device

attempts to auto-restart. Table 1 list recovery behaviour under various fault conditions.

Table 1: SZ1130 Recovery Behavior

Fault Protection SZ1130

Input Under Voltage Lockout (UVLO)/ Brown-Out Auto-Recovery

Input Over Voltage Lockout (OVLO) Auto-Recovery

Internal Over Temp Protection (OTP) Hiccup

External Over Temp Protection (OTP) Hiccup

Peak Current Limit (PCL) Hiccup

Over-Power Protection (OPP) Hiccup

Output Short Circuit (OSC) Hiccup




PCB Layout

PCB Prints

Figure 4: Component side horizontal board, top

Figure 5: Solder side horizontal, bottom




Figure 6: Component side vertical board, top

Figure 7: Solder side vertical board, middle 1 (left) and 2 (right)

Figure 8: Solder side vertical board, bottom




Figure 9: GaN daughter card, top

Figure 10: GaN daughter card, bottom




Bill of Materials (BOM)

Description Designator Manufacturer Manufacturer part number

Horizontal Board (USB Type-C Connector)

BRIDGE RECT 1PHASE 1KV 4A Z4-D BR1, BR2 Comchip Technology Z4DGP410L-HF

CAP CER 220NF X2 C1 W12.5H10T6

CAP ALUM 560UF 20% 25V T/H C5, C6, C20 YMIN SPE1EM681E160L

CAP CER 0.1UF 50V X7R 0603 C7, Samsung Electro-Mechanics CL10B104KB8NNNC

CAP CER 1UF 25V X7R 0603 C28 Samsung Electro-Mechanics CL10B105KA8NNNC

CAP CER 3300PF 25V X7R 0603 C31 AVX Corporation 06033C332KAT2A

CAP CER 0.047UF 25V X7R 0603 C32 AVX Corporation 06033C473KAT2A

CAP CER 8200PF 50V X7R 0603 C46 KEMET C0603C822K5RACTU

CAP CER 10UF 25V X7R 1206, C8 TDK Corporation C3216X7R1E106K160AB

CAP CER 150PF 200V NPO 0805 C10 Yageo CC0805JRNPOABN151

CAP CER 10UF 25V X5R 0603 C30, C35 Murata Electronics GRM188R61E106MA73D

CAP CER 0.1UF 50V X7R 0603 C34, C37 Samsung Electro-Mechanics CL10B104KB8NNNC

CAP CER 270PF 50V X7R 0603 C36, C38, C39, C42 Yageo CC0603KRX7R9BB271


CAP CER 1UF 35V X7R 0603 C41, C48 TDK Corporation CGA3E1X7R1V105K080AC

CAP CER 0.033UF 50V X7R 0603 C43, C44, C47 Yageo CC0603KRX7R9BB333

CAP CER 0.022UF 50V X7R 0603 C45 Yageo CC0603KRX7R9BB223

C49

FUSE BOARD MNT 3A 250VAC 125VDC F1 Eaton - Electronics Division TR2/1025TD3-R

USB JACK, C TYPE, POWER ONLY, 6 J1 CUI Devices UJC-HP-3-SMT-TR

L2

100V N-FET PQFN56 Q1 ON Semiconductor FDMS86181

MOSFET N-CH 25V 124A 8PQFN Q4 ON Semiconductor FDMC2D8N025S

DNI RES 1206, DNI RES 1206, , R1, R2

RES SMD 470 OHM 1% 1/10W 0603 R8, Yageo RC0603FR-07470RL

RES 0 OHM JUMPER 1/10W 0603 R9 Stackpole Electronics Inc RMCF0603ZT0R00

RES SMD 0 OHM 1/10W 0603 R10 Yageo RC0603JR-070RL

RES SMD 84.5K OHM 1% 1/10W 0603 R14 Yageo RC0603FR-0784K5L

RES SMD 10K OHM 1% 1/10W 0603 R23 Yageo RC0603FR-0710KL

DNI R40


RES SMD 1.5K OHM 1% 1/10W 0603 R43 Bourns Inc. CR0603-FX-1501ELF

RES SMD 7.5K OHM 1% 1/10W 0603 R46 Yageo AC0603FR-077K5L

RES SMD 47 OHM 1% 1/10W 0603 R20, R36 Yageo RC0603FR-0747RL

RES 0.005 OHM 1% 1W 1206 R25 Bourns Inc. CFN1206-FX-R005ELF


RES SMD 1M OHM 1% 1/10W 0603 R37 Yageo RC0603FR-071ML




RES SMD 47K OHM 1% 1/10W 0603 R44 Yageo AC0603FR-0747KL

NTC thermistor 0603 5% RT3 Vishay Dale NTHS0603N17N2003JE

VARISTOR 430V 250A 2SMD NO LEAD RV1 Littelfuse Inc. V430CH8

PC TEST POINT NATURAL TP1, TP2 TE Connectivity AMP Connectors RCU-0C

WT6633P USB PD Controller QFN16 U2 Weltrend

FAST TURN-OFF INTELLIGENT RECTIF U3 Monolithic Power Systems Inc. MP6908AGJ-P

OPTOISO 5KV TRANSISTOR SO6L U4 Toshiba Semiconductor TLP383(D4BLLTL,E




IC VREF SHUNT 36V 1% SOT23-3 U5 Texas Instruments ATL431AIDBZR

DIODE ZENER 24V 500MW SOD123, Z1 Diodes Incorporated DDZ24C-7,

DIODE ZENER 91V 500MW SOD123 Z3 ON Semiconductor MMSZ5270BT1G

CAP CER 2.2nF 25V X7R 0603 C50 Murata Electronics

Vertical Board

CAP ALUM 33UF 20% 400V T/H C2, C3, C26, C29 YMIN KCX(33UF-10X18P5)

CAP CER 4.7UF 25V X6S 0603 C11 Murata Electronics GRM188C81E475KE11D


CAP CER 10000PF 25V X7R 0603 C14 Samsung Electro-Mechanics CL10B103KA8NNNC

CAP CER 1000PF 16V X7R 0603 C15 Yageo CC0603KRX7R7BB102


CAP CER 39PF 50V C0G/NP0 0603 C17 KEMET C0603C390J5GACTU


CAP CER 1UF 35V X7R 0603 C19 Taiyo Yuden GMK107AB7105KAHT



CAP CER 150PF 16V X7R 0603 C27 Würth Elektronik 8.85012206029E+11

CAP CER 10000PF 630V X7R 1206, C9 KEMET C1206C103KBRACTU

CAP CER 4700PF 630V X7R 1206, C13 TDK Corporation C3216X7R2J472K115AA

CAP CER 10000PF 630V X7R 1206, C22 KEMET C1206C103KBRACTU

CAP CER 10UF 35V X7R 1206 C23 Samsung Electro-Mechanics CL31B106KLHNNNE

CAP ALUM 68UF 80V 20% T/H C21 YMIN LKMC0902A190MF

CAP ALUM 47UF 20% 16V RADIAL C33 Rubycon 25YXJ47MTA5X11

DIODE GEN PURP 1KV 1A SOD123FA D1, D3 ON Semiconductor US1MFA

DIODE ZENER 4.7V 200MW D2 ON Semiconductor MM3Z4V7B

DIODE ZENER 56V 200MW SOD323F Z2 ON Semiconductor MM3Z56VB

D4

D8

50NS 1A 300V HIGH EFFICIENT RECO D6, D7

Taiwan Semiconductor

Corporation HS1FFL

DIODE SCHOTTKY 100V 250MA SOD323 D10 Nexperia USA Inc. BAT46WJ,115

FB1, FB2

CMC 9 mH 10X15 L1 CUSTOM_10X15

GS-065-008-1-L Q2 GaN Systems GS-065-008-1-L

MOSFET 2N-CH 60V 0.35A Q3 Diodes Incorporated DMN61D9UDW-7

RES SMD 24.9 OHM 1% 3/4W 1206, R6 Vishay Dale CRCW120624R9FKEAHP

RES 0.18 OHM 1% 1/4W 1206 R16 Yageo, RL1206FR-070R18L

RES 0.16 OHM 1% 1/2W 1206, R17 TE Connectivity Passive Product RLP73K2BR16FTDF

RES SMD 24.9 OHM 1% 3/4W 1206 R24 Vishay Dale CRCW120624R9FKEAHP

RES SMD 22M OHM 1% 1/4W 0805, R3, R5, R7, R30 Stackpole Electronics Inc RMCF0805FT22M0

DNI RES 0805, R4


RES SMD 500 OHM 1/10W 0603 R13 Yageo

RES SMD 10 OHM 1% 1/10W 0603 R15 Yageo RC0603FR-0710RL

RES SMD 14K OHM 0.1% 1/10W 0603 R18 Yageo RT0603BRD0714KL

RES 120K OHM 1% 1/10W 0603 R19 Stackpole Electronics Inc RMCF0603FT120K

RES 100K OHM 1% 1/10W 0603 R21 Stackpole Electronics Inc RMCF0603FT100K


RES SMD 4.7 OHM 1% 1/10W 0603 R26 Yageo RC0603FR-074R7L


RES SMD 100 OHM 1% 1/10W 0603 R28 Yageo RC0603FR-07100RL

RES SMD 47 OHM 1% 1/10W 0603 R29 Yageo RMCF0603FT47R0


DNI R47

RES SMD 825K OHM 1% 1/10W 0603 R48

RES SMD 274K OHM 1% 1/10W 0603 R49


RES SMD 0 OHM 1/10W 0603 R31 Yageo RC0603JR-070RL




RES SMD 619K OHM 1% 1/16W 0402, R32, Yageo RC0402FR-07619KL

RES SMD 43.2K OHM 1% 1/16W 0402, R33, Yageo RC0402FR-0743K2L

R45 Yageo

THERM NTC 100KOHM 4485K 0402 RT2 Murata Electronics NCP15WL104E03RC

TRANSFORMER RM 8 T1 TBD YT-0803

Flyback PWM Controller with Integrated Active Clamp

Circuit U1 Silanna Semiconductor SZ1130

DIODE, 800V, 200mA D12 Panasonic DA2JF8100L

Gan Daugter Board

RES SMD 10K OHM 1% 1/10W 0402 Panasonic ERJ-2RKF1002X R45

RES SMD 100K OHM 0.1% 1/10W 0603 Panasonic ERJ-U02F1003X R46

CAP CER 0.022UF 50V X7R 0603 Murata Electronics GCM155R71H223JA55D C49

DIODE ZENER 5.6V 200MW SMINI2 Panasonic DZ2J056M0L D11

DIODE ZENER 10V 200MW SMINI2 Panasonic DZ2J100M0L D12

MOSFET 650V, 8A, GaN E-HEMT, 5x6 PDFN GaN Systems GS-065-008-1-L Q2




Transformer Specification

Table 2: Transformer Material Lists




Common-Mode Choke Specification

Table 3: Common-Mode Choke Material Lists

Material Specification Manufacturer Mfr. Part Number

Core R12.5 × 7.90 × 6.35 mm dimension (T38 -10000u)

EPCOS/TDK or equivalent B64290L0742X038 or equivalent

AWG26 Magnet wire, dual insulation layer Various

Separator PCB or Plastic




Performance Data

Electrical Data

Efficiency

DoE Level VI and CoC Version 5 Tier-2 4-point (25%, 50%, 75%, 100%) average efficiency, along with CoC Version 5 Tier-2 10% load efficiency requirements.

Table 4: Load Efficiency Requirements

Vout/Iout DoE Level VI 4-Point

Average Efficiency

CoC V5 Tier-2 4-Point

Average Efficiency CoC V5 Tier-2 10% Efficiency

5 V/3.25 A 81.88% 81.84% 72.99%

9 V/3.25 A 86.87% 87.30% 77.60%

15 V/3.25 A 87.77% 88.85% 78.99%

20 V/3.25 A 87.54% 89.16. % 79.16%

115 Vac 4-point average efficiency (measured after the USB-PD disconnect FET)

VOUT / ILOAD_MAX = 5 V / 3.25 A

%LOAD Efficiency (%) Average Efficiency (%)

100 91

89.77 75 90.86

50 90.24

25 87.18

10 84.12



100 93.21

92.13 75 93.05

50 92.49

25 90.20

10 84.45



100 93.35

93.36 75 93.72

50 93.75

25 92.63

10 87.69






100 93.37

93.32 75 93.59

50 93.69

25 92.67

10 88.33

230 Vac 4-point average efficiency (measured after the USB-PD disconnect FET)



100 88.8

86.97 75 88.47

50 86.31

25 84.29

10 81.68



100 92.76

90.39 75 91.79

50 90.65

25 86.38

10 83.17



100 93.95

92.59 75 93.60

50 92.64

25 90.18

10 85.75



100 94.23

93.11 75 94.04

50 93.31

25 90.89

10 85.69




Full Load Efficiencies at 115 Vac/230 Vac; 5 V/ 9 V/ 15 V/ 20 V (measured after the USB-PD disconnect FET)

Vout = 5 V

Vin Iout Efficiency (%)

90 Vac @ 50 Hz 3.25 A 90.47

115 Vac @ 60 Hz 3.25 A 91

230 Vac @ 50 Hz 3.25 A 88.8

265 Vac @ 50 Hz 3.25 A 88.33

Vout = 9 V


90 Vac @ 50 Hz 3.25 A 92.5

115 Vac @ 60 Hz 3.25 A 93.21

230 Vac @ 50 Hz 3.25 A 92.76

265 Vac @ 50 Hz 3.25 A 92.05

Vout = 15 V


90 Vac @ 50 Hz 3.25 A 92.71

115 Vac @ 60 Hz 3.25 A 93.35

230 Vac @ 50 Hz 3.25 A 93.95

265 Vac @ 50 Hz 3.25 A 93.62

Vout = 20 V


90 Vac @ 50 Hz 3.25 A 92.22

115 Vac @ 60 Hz 3.25 A 93.37

230 Vac @ 50 Hz 3.25 A 94.23

265 Vac @ 50 Hz 3.25 A 94.07




Efficiency Graphs

The following graphs demonstrate 5 V/ 9 V/ 15 V/ 20 V efficiency results measured after the USB-PD disconnect FET.

Figure 11: Efficiency graphs for various output voltages and load currents




No-Load Power Consumption

Table 5 lists no-load power consumption of the evaluation board across the input voltages. The worst case maximum no-load

power consumption is less than 75 mW.

Table 5: No-load Power Consumption

Input Voltage (Vac) No-Load Power (mW)

90 57.0

115 58.34

230 66.5

265 73.5




Key Waveforms

The key waveforms for the worst case voltage conditions as seen by the primary side Gan Transistor and secondary side MOSFET are shown below. Due to the active clamp operation of SZ1130, there is practically no voltage spike at the switching node as shown in the following figures.

Vin=265 Vac, Vout=20 V, Iout=3.25 A, Vds_pri (max) = 568V

Vds_sec (max) = 77V

Vin=265 Vac, Vout=20 V, Iout=0 A, Vds_pri (max) = 548V

Vds_sec (max) = 79V

Figure 12: Voltage stress on the primary and secondary side MOSFET during worst case operating conditions




Conducted EMI Scans

The following conducted EMI measurements demonstrate more than 6 dB margin is maintained under all input (115 Vac/ 230 Vac) and output voltage (5 V/ 9 V/ 15 V/ 20 V) conditions with floating output.

Vin=115 Vac, Vout=5 V, Iout=3.25 A Vin=115 Vac, Vout=9 V, Iout=3.25 A







Figure 13: Conducted EMI test results under various operating conditions




Thermal Measurements

The key thermal IR camera pictures and component temperatures are shown below for 90Vac/20V/65W (worst-case) operating condition after 1hr bake time. The maximum component temperatures is lower than 95 0C.

RefDes Description 90VAC 265VAC

U1 SZ1130-00 88.5°C 76.6°C

BR1 Bridge Rectifier 93.4°C 59.4°C

T1 Transformer 94.4°C 89.5°C

Q2 Primary GaN Transistor 91.1°C 94.9°C

Q1 Secondary SR MOSFET 86.3°C 81.6°C

Vin=90 Vac, Vout=20 V, Iout=3.25 A (top) Vin=90 Vac, Vout=20 V, Iout=3.25 A (bottom)

Vin=90 Vac, Vout=20 V, Iout=3.25 A (side left) Vin=90 Vac, Vout=20 V, Iout=3.25 A (side right)

Figure 14: Thermal IR pictures after 1hr bake time at 90Vac/20V/65W.




Vin=265 Vac, Vout=20 V, Iout=3.25 A (top) Vin=265 Vac, Vout=20 V, Iout=3.25 A (bottom)

Vin=265 Vac, Vout=20 V, Iout=3.25 A (side left) Vin=265 Vac, Vout=20 V, Iout=3.25 A (side right)

Figure15: Thermal IR pictures after 1hr bake time at 265Vac/20V/65W.



Page 26 Document 11075 Ver. 1.0

Silanna Semiconductor Proprietary and Confidential

Information furnished by Silanna Semiconductor is believed to be accurate and reliable. However, no

responsibility is assumed for its use. Silanna Semiconductor makes no representation that the

interconnection of its circuits as described herein will not infringe on existing patents rights.

4795 Eastgate Mall, Suite 100, San Diego, CA 92121

Toll Free: (888) 637-3564 | Fax: (858) 373-0437 | www.PowerDensity.com

Revision History

Revision Date Author Note

1.0 Feb. 24, 2021 Results collected and report generated.

Hardware Info

Info Value

Run name tag eff_RD12_008

Timestamp Feb 24, 2021

Primary IC Silanna Semiconductor Integrated Flyback PWM Controller (SZ1130-00)

Primary Switch GaN System 650 V E-mode GaN Transistor (GS-065-008-1-L)

Secondary IC Weltrend WT6633P

AC Supply Chroma, Programable AC Source, 61504

Input Meter YOKOGAWA,WT310E

Output Meter YOKOGAWA,WT330

Oscilloscope AGILENT TECHNOLOGIES,DSO-X 4024A,MY59241548,07.30.2019051435

Eff bake time per point 240

No-load bake time 240

Number of points 30 (no load efficiency)

Input voltages [(90, 60), (115, 60), (230, 50), (265, 50)]

Output voltages [5, 9, 15, 20]


Documents

VNTCTH C R V - Active Clamp Flyback | Ultimate Power Density