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UCSB Nanofabrication FacilityCollege of Engineering
A Multidisciplinary Research Facility
Serving UCSB and the
Greater Research Community
Nanofab Facility Overview
~13000 ft2 of total clean space in cleanroom (Class 1000, 100).
Class 1,000 – DepositionBay 3 New CR
Class 100 – Litho1Bay 6 New CR
Main Corridor7 Bays
Facility Overview
Director : Prof. Mark Rodwell
Staff of 16 including 3 Ph.D. Level Scientists/Engineers offering process and equipment support.
Provide laboratory access and REMOTE processing. Remote Processing on best-effort basis only
Rates: $120/hour for machine use (Ebeam lithography $450/hr)$50/hour for staff remote processing
Capital equipment purchase committee decides on yearly equipment acquisition based on our capital budget, user, and management input.
Intellectual Property Researchers own IP developed in lab.
Facility Overview
Process and equipment support from laboratory dedicated staff.
Lithography from microns in scale down to <10 nm. MJB3/MA6 Contact Aligners – Including Back-side alignment
GCA i-line wafer steppers – resolution to below 0.4um
JEOL 6300FS E-beam lithography down to 8nm
Interference lithography for 1-D, 2-D gratings. Nanoimprint lithography
Thin film processing of a wide variety of materials (metals, semiconductors, insulators) Thin film deposition (evaporation, sputtering, PECVD, IBD)
Wet chemical etching and cleaning
Plasma based processing (RIE, ICP, etc.)
Substrate bonding, imprinting, high temperature and rapid annealing
Characterization within the clean environment. High resolution field-emission SEM
Scanning probe microscopy (Including electrical measurement capability)
Thin film stress, optical properties, some electrical properties.
Advanced Nanometer-Scale
Pattern Definition E-beam
80 nm T-gate for AlGaN/GaN HEMT Photonic Crystal Waveguide
Advanced ICP Etching
Deep-Si Etch for MEMSC4F8/SF6/Ar cyclical
Typical Standard Bosch Process~ 2um/min etch rate
Vertical Posts – InPCl2/N2-based
200 C Chuck TempN. Cao
High Aspect EtchingCl2/Ar, 400W ICP, 100W
RF. 2um/min RatesE. Parker, B. Thibeault, M.
Rao
TiW Etch Rate: ~ 250 nm min>20:1 selectivity over CrFor Narrow Emitter HBTs
E. Lind
Deep SiC pillar/mesa 900 W ICP, 200 W BiasEtch Rate: 540 nm/min
Ni hard Mask10um tall pillars
The NNIN Network
www.nnin.org
A Collaborative National Network
As a network, we can access a wide range of
advanced processes
NSF Funded
Users in Facility
• Over 480 research users of facility annually
• Over 130 Industrial users per year
• Steadily growing over last 10 years
Cumulative Users by Affiliation
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Year
#U
sers
Foreign
Government
Large Company
Small Company
pre-college
2 year college
4 year college
Other University
Local Academic
Outside User Community (2007)178 Researchers, 132 Industrial Users, 41 Academic Users Apic
Assylum ResearchCreeLockheed MartinRocketstar RoboticsAerius PhotnicsPrimegen BiotechCytomXAdvanced NanostructuresAdvRAgile MaterialsApplied Nanostructures, Inc.Atomate CorporationATK Mission ResearchAurrionCollinear CorporationDiode SolutionsDupont DisplaysFreedom PhotonicsInterphases ResearchInlustraMitsubishi ChemicalPraevium ResearchRaytheon InfraredSpectralabVeeco MetrologyInnovative Micro TechnologyAonex TechnologiesApic CorporationNano and Micro Tech ConsultantsIntelJDSUKaaiLaunchpointLuxteraTyco ElectronicsSilicon ClocksPLTTelaztecInlustra TechnologiesMeggitt EndevcoLuxteraCalient NetworksFulltec SemiconductorFLIRQmagiqSemisouth LabsTransphorm
Life Sciences
Optics/Photonics
Electronics/Acoustics/MEMs
California Institute of TechnologyPurdue UniversityStanford UniversityUniversity of ArizonaUniversity of ArkansasUniversity of California, BerkeleyUniversity of California, Los AngelesUniversity of Hamburg, GermanyUniversity of California, San DiegoUniversity of California, IrvineUniversity of Nevada, Las VegasUniversity of California, RiversideCSU FresnoGeorge Washington UniversityUniversity of VirginiaUniversity of Southern CaliforniaNational Institute of Standards
MW (~ 5 mm) LW (~ 8.6 mm)
R&D
Products
• QmagiQ develops infrared imaging chips based on III-V compound semiconductors.
• Part of the device development is carried out at the UCSB node of the NNIN.
• The facility crucially enables us to fabricate arrays with ultra-large formats, e.g. 1Kx1K and 2Kx2K,
important for the wide field-of-view imaging
• Cameras containing such chips find uses in security and surveillance, missile defense, pollution
detection and monitoring, and astronomy.
Large Format Multi-Color Infrared Imaging Sensors
1Kx1K 2-Color infrared
imaging chip
2-Color image from
320x256 test array
MW (~ 5 mm) LW (~ 8.6 mm)
Large array
Sensor
Engine
Camera
QmagiQ, www.qmagiq.com
Funding from Missile Defense Agency
East Coast Company using our lab to do full wafer processing – On Site!
Long Term R&D Development facilitated by the UCSB facility
Integrated broadband sources for Optical Coherence
Tomography and Near Infrared Spectroscopy
V. Jayaraman, D. Leonard, E. Hall Praevium Research Santa Barbara, CA
Acknowledgements: NIH SBIR grants R44CA101067, R44CA101077, and USDA SBIR grant 2005-336610-16158
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No
rmalized
laser
po
wer
(a.u
.)
1200-1500 nm High Power Ultra-Broadband
SLEDs for High Resolution Tissue Imaging
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Wavelength (nm)
Po
we
r (d
Bm
)
130nm
115nm
650-1700 nm Waveguide-Multiplexed
Laser Arrays for Spectroscopy
1000 nm
How to Use Us
Submit a Job Proposal: One page form with basic information
Discuss the project with one of the technical staff: Decide if the job will be remote or if you will come on site (Some minimum experience is needed if you will do the work).
Send parts for remote work: We try to turn around simple jobs within a week, more complex jobs in 2-3 weeks.
Come to use our facility: We train users to use equipment
Get process and equipment consultation at no extra charge from staff. We want to help you get your results.
