TSTS7303

TSTS730.Vishay Telefunken

1 (5)Rev. 2, 20-May-99www.vishay.de • FaxBack +1-408-970-5600Document Number 81048

GaAs IR Emitting Diodes in Hermetically Sealed TO18Case

DescriptionThe TSTS730. series are infrared emitting diodes instandard GaAs technology in a hermetically sealedTO–18 package. Their glass lenses provide a high ra-diant intensity without external optics.

Features

� High radiant intensity

� Suitable for pulse operation

� Angle of half intensity ϕ = ± 12�

� Peak wavelength �p = 950 nm

� High reliability

� Good spectral matching to Si photodetectors

94 8642

ApplicationsRadiation source in near infrared range

Absolute Maximum RatingsTamb = 25�C

Parameter Test Conditions Symbol Value UnitReverse Voltage VR 5 VForward Current Tcase � 25 �C IF 250 mAPeak Forward Current tp/T = 0.5, tp � 100 �s,

Tcase � 25 �CIFM 500 mA

Surge Forward Current tp � 100 �s IFSM 2.5 APower Dissipation PV 170 mW

Tcase � 25 �C PV 500 mWJunction Temperature Tj 100 �CStorage Temperature Range Tstg –55...+100 �CThermal Resistance Junction/Ambient RthJA 450 K/WThermal Resistance Junction/Case RthJC 150 K/W


2 (5) Rev. 2, 20-May-99www.vishay.de • FaxBack +1-408-970-5600 Document Number 81048

Basic CharacteristicsTamb = 25�C

Parameter Test Conditions Symbol Min Typ Max UnitForward Voltage IF = 100 mA, tp � 20 ms VF 1.3 1.7 VBreakdown Voltage IR = 100 �A V(BR) 5 VJunction Capacitance VR = 0 V, f = 1 MHz, E = 0 Cj 30 pFRadiant Power IF = 100 mA, tp � 20 ms �e 7 mWTemp. Coefficient of �e IF = 100 mA TK�e –0.8 %/KAngle of Half Intensity ϕ ±12 degPeak Wavelength IF = 100 mA �p 950 nmSpectral Bandwidth IF = 100 mA �� 50 nmRise Time IF = 1.5 A, tp/T = 0.01,

tp � 10 �str 400 ns

Fall Time IF = 1.5 A, tp/T = 0.01, tp � 10 �s

tf 400 ns

Type Dedicated CharacteristicsTamb = 25�C

Parameter Test Conditions Type Symbol Min Typ Max UnitRadiant Intensity IF=100mA, tp=20ms TSTS7300 Ie 4 6.3 mW/sry F

TSTS7301 Ie 6.3 10 12.5 mW/srTSTS7302 Ie 10 16 20 mW/srTSTS7303 Ie 16 25 32 mW/sr

Typical Characteristics (Tamb = 25�C unless otherwise specified)

0 25 50 75 1000

200

400

600

P

– P

ower

Dis

sipa

tion

( m

W )

V

Tamb – Ambient Temperature ( °C )

125

94 8017 e

RthJA100

300

500RthJC

Figure 1. Power Dissipation vs. Ambient Temperature

0 20 40 60 800

50

100

150

200

300

I –

For

war

d C

urre

nt (

mA

)F


100

94 8018 e

RthJC

250

RthJA

Figure 2. Forward Current vs. Ambient Temperature



tp – Pulse Duration ( ms )94 8003 e

100

101

101

10–1

10–1 100 10210–2

I –

For

war

d C

urre

nt (

A )

F

tp /T=0.01

IFSM = 2.5 A ( Single Pulse )

0.05

0.1

0.2

0.5

Figure 3. Pulse Forward Current vs. Pulse Duration

0 1 2 3

VF – Forward Voltage ( V )

4

94 7996 e

101

100

102

103

104

10–1

I –

For

war

d C

urre

nt (

mA

)F

Figure 4. Forward Current vs. Forward Voltage

0 20 40 60 800.7

0.8

0.9

1.0

1.1

1.2

V

–

Rel

ativ

e F

orw

ard

Volta

geF

rel


100

94 7990 e

IF = 10 mA

Figure 5. Relative Forward Voltage vs. Ambient Temperature

94 8004 e

103101 102 104100

0.1

1

10

1000

100

IF – Forward Current ( mA )

I –

Rad

iant

Inte

nsity

( m

W/s

r )

e

TSTS 7301

TSTS 7302

TSTS 7303

tp/T = 0.01 , tp = 20 �s

Figure 6. Radiant Intensity vs. Forward Current

– R

adia

nt P

ower

( m

W )

e

IF – Forward Current ( mA )94 7977 e

�

103101 102 104100

0.1

1

10

1000

100

Figure 7. Radiant Power vs. Forward Current

–10 10 500 1000

0.4

0.8

1.2

1.6

I

;e

re

l

e r

el


140

94 7993 e

�

IF = 20 mA

Figure 8. Rel. Radiant Intensity\Power vs. Ambient Temperature


4 (5) Rev. 2, 20-May-99www.vishay.de • FaxBack +1-408-970-5600 Document Number 81048

900 9500

0.25

0.5

0.75

1.0

1.25

� – Wavelength ( nm )

1000

94 7994 e

– R

elat

ive

Rad

iant

Pow

ere

rel

�

IF = 100 mA

Figure 9. Relative Radiant Power vs. Wavelength

0.4 0.2 0 0.2 0.4

I

–

Rel

ativ

e R

adia

nt In

tens

itye

rel

0.6

94 8021 e

0.6

0.9

0.8

0°30°

10°

20°

40°

50°

60°

70°

80°0.7

1.0

Figure 10. Relative Radiant Intensity vs. Angular Displacement

Dimensions in mm

14487



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It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known asozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs andforbid their use within the next ten years. Various national and international initiatives are pressing for an earlier banon these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use ofODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depletingsubstances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer applicationby the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly orindirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyTelephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Documents

TSTS7303