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C(2, TAB)
E(3)NG1E3C2T
G(1)
Features• Maximum junction temperature : TJ = 175 °C• Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A• Co-packaged protection diode• Minimized tail current• Tight parameter distribution• Low thermal resistance• Positive VCE(sat) temperature coefficient
Applications• Welding• Power factor correction
DescriptionThe newest IGBT 650 V HB2 series represents an evolution of the advancedproprietary trench gate field-stop structure. The performance of the HB2 series isoptimized in terms of conduction, thanks to a better VCE(sat) behavior at low currentvalues, as well as in terms of reduced switching energy. A diode used for protectionpurposes only is co-packaged in antiparallel with the IGBT. The result is a productspecifically designed to maximize efficiency for a wide range of fast applications.
Product status link
STGWA40HP65FB2
Product summary
Order code STGWA40HP65FB2
Marking G40HP65FB2
Package TO-247 long leads
Packing Tube
Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package
STGWA40HP65FB2
Datasheet
DS12538 - Rev 3.0 - July 2019For further information contact your local STMicroelectronics sales office.
www.st.com
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VGE = 0 V) 650 V
ICContinuous collector current at TC = 25 °C 72 A
Continuous collector current at TC = 100 °C 45 A
ICP(1)(2) Pulsed collector current 120 A
VGEGate-emitter voltage ±20
VTransient gate-emitter voltage (tp ≤ 10 μs) ±30
IFContinuous forward current at TC = 25 °C 5
AContinuous forward current at TC = 100 °C 5
IFP(1)(2) Pulsed forward current 10 A
PTOT Total power dissipation at TC = 25 °C 230 W
TSTG Storage temperature range -55 to 150 °C
TJ Operating junction temperature range -55 to 175 °C
1. Pulse width is limited by maximum junction temperature.2. Defined by design, not subject to production test.
Table 2. Thermal data
Symbol Parameter Value Unit
RthJCThermal resistance junction-case IGBT 0.65
°C/WThermal resistance junction-case diode 5
RthJA Thermal resistance junction-ambient 50
STGWA40HP65FB2Electrical ratings
DS12538 - Rev 3.0 page 2/16
2 Electrical characteristics
TC = 25 °C unless otherwise specified
Table 3. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)CESCollector-emitter breakdownvoltage VGE = 0 V, IC = 1 mA 650 V
VCE(sat)Collector-emitter saturationvoltage
VGE = 15 V, IC = 40 A 1.55 2
V
VGE = 15 V, IC = 40 A,
TJ = 125 °C1.75
VGE = 15 V, IC = 40 A,
TJ = 175 °C1.85
VF Forward on-voltage
IF = 5 A 2 2.8
VIF = 5 A, TJ = 125 °C 1.85
IF = 5 A, TJ = 175 °C 1.75
VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V
ICES Collector cut-off current VGE = 0 V, VCE = 650 V 25 µA
IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA
Table 4. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
Cies Input capacitanceVCE = 25 V, f = 1 MHz,
VGE = 0 V
- 2300 -
pFCoes Output capacitance - 122 -
Cres Reverse transfer capacitance - 64 -
Qg Total gate charge VCC = 520 V, IC = 40 A,
VGE = 0 to 15 V
(see Figure 27. Gate charge test circuit)
- 153 -
nCQge Gate-emitter charge - 29 -
Qgc Gate-collector charge - 67 -
STGWA40HP65FB2Electrical characteristics
DS12538 - Rev 3.0 page 3/16
Table 5. Switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(off) Turn-off delay time VCC = 400 V, IC = 40 A,
VGE = 15 V, RG = 4.7 Ω
(see Figure 26. Test circuit for inductiveload switching)
- 125 - ns
tf Current fall time - 24 - ns
Eoff (1) Turn-off switching energy - 410 - µJ
td(off) Turn-off delay time VCC = 400 V, IC = 40 A,
VGE = 15 V, RG = 4.7 Ω,
TJ = 175 °C
(see Figure 26. Test circuit for inductiveload switching)
- 131 - ns
tf Current fall time - 58 - ns
Eoff (1) Turn-off switching energy - 780 - µJ
1. Including the tail of the collector current.
Table 6. Diode switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
trr Reverse recovery time
IF = 5 A, VR = 400 V,
VGE = 15 V, di/dt = 1000 A/µs
(see Figure 29. Diode reverse recoverywaveform)
- 140 - ns
Qrr Reverse recovery charge - 21 - nC
Irrm Reverse recovery current - 6.6 - A
dIrr/dt Peak rate of fall of reverserecovery current during tb
- 430 - A/µs
Err Reverse recovery energy - 1.6 - µJ
trr Reverse recovery timeIF = 5 A, VR = 400 V,
VGE = 15 V, di/dt = 1000 A/µs,
TJ = 175 °C
(see Figure 29. Diode reverse recoverywaveform)
- 200 - ns
Qrr Reverse recovery charge - 47.3 - nC
Irrm Reverse recovery current - 9.6 - A
dIrr/dt Peak rate of fall of reverserecovery current during tb
- 428 - A/µs
Err Reverse recovery energy - 3.2 - µJ
STGWA40HP65FB2Electrical characteristics
DS12538 - Rev 3.0 page 4/16
2.1 Electrical characteristics (curves)
Figure 1. Power dissipation vs case temperature
IGBT180420181011PDT
200
150
100
50
025 75 125 175
PTOT (W)
TC (°C)
TJ ≤ 175 °C
Figure 2. Collector current vs case temperature
IGBT180420181012CCT
60
40
20
025 75 125 175
IC (A)
TC (°C)
VGE ≥ 15 V, TJ ≤ 175 °C
Figure 3. Output characteristics (TJ = 25 °C)
GADG090420181401OCH
100
80
60
40
20
00 1 2 3 4 5
IC (A)
VCE (V)VGE = 7 V
VGE = 9 V
VGE = 11 VVGE = 13 V
VGE = 15 V
Figure 4. Output characteristics (TJ = 175 °C)
GADG090420181401175OCH
100
80
60
40
20
00 1 2 3 4 5
IC (A)
VCE (V)
VGE = 7 V
VGE = 9 V
VGE = 11 V
VGE = 13 V
VGE = 15 V
Figure 5. VCE(sat) vs junction temperature
IGBT090420181402VCET
2.3
1.9
1.5
1.1-50 0 50 100 150
VCE(sat) (V)
TJ (°C)
IC = 20 A
IC = 40 A
IC = 80 AVGE = 15 V
Figure 6. VCE(sat) vs collector current
IGBT180420181013VCEC
3.0
2.6
2.2
1.8
1.4
1.0
0.60 20 40 60 80 100
VCE(sat) (V)
IC (A)
VGE = 15 V
TJ = 175 °C
TJ = 25 °C
TJ = -40 °C
STGWA40HP65FB2Electrical characteristics (curves)
DS12538 - Rev 3.0 page 5/16
Figure 7. Forward bias safe operating area
GADG090420181402SOA
102
101
100
100 101 102 VCE (V)
tp = 1 µs
tp = 10 µs
tp = 100 µs
tp = 1 ms
Single pulse, TC = 25 °C,TJ ≤ 175 °C, VGE = 15 V
IC(A)
Figure 8. Transfer characteristics
GADG180420181014TCH
100
80
60
40
20
05 6 7 8 9 10
IC (A)
VGE (V)
VCE = 6 V
TJ = 175 °CTJ = 25 °C
Figure 9. Diode VF vs forward current
IGBT090420181403DVF
2.4
1.6
0.8
0.00 2 4 6 8
VF (V)
IF (A)
TJ = 25 °C
TJ = -40 °C
TJ = 175 °C
Figure 10. Normalized VGE(th) vs junction temperature
IGBT090420181403NVGE
1.1
1.0
0.9
0.8
0.7
0.6-50 0 50 100 150
VGE(th) (norm.)
TJ (°C)
VCE = VGE
IC = 1 mA
Figure 11. Normalized V(BR)CES vs junction temperature
IGBT090420181404NVBR
1.08
1.04
1.00
0.96
0.92-50 0 50 100 150
V(BR)CES (norm.)
TJ (°C)
IC = 1 mA
Figure 12. Capacitance variations
GADG090420181404CVR
10 3
10 2
10 1
10 -1 10 0 10 1 10 2
C (pF)
VCE (V)
Cies
Coes
Cres
f = 1 MHz
STGWA40HP65FB2Electrical characteristics (curves)
DS12538 - Rev 3.0 page 6/16
Figure 13. Gate charge vs gate-emitter voltage
GADG090420181404QVG
15
12
9
6
3
00 30 60 90 120 150
VGE (V)
Qg (nC)
VCC = 520 V, IC = 40 A, IG = 1 mA
Figure 14. Switching energy vs collector current
IGBT090420181405SLC
1.6
1.2
0.8
0.4
0.00 20 40 60 80
E(mJ)
IC (A)
Eoff
VCC = 400 V, RG = 4.7 Ω, VGE = 15 V, TJ = 175 °C
Figure 15. Switching energy vs temperature
IGBT090420181405SLT
0.8
0.7
0.6
0.5
0.4
0.30 50 100 150
E (mJ)
Eoff
VCC = 400 V, IC = 40 A, RG = 4.7 Ω, VGE = 15 V
TJ (°C)
Figure 16. Switching energy vs collector emitter voltage
IGBT090420181405SLV
1.0
0.8
0.6
0.4150 250 350 450
E (mJ)
VCE (V)
Eoff
IC = 40 A, RG = 4.7 Ω, VGE = 15 V, TJ = 175 °C
Figure 17. Switching energy vs gate resistance
IGBT090420181405SLG
1.2
1.1
1.0
0.9
0.8
0.70 10 20 30 40
E (mJ)
RG (Ω)
EOFF
IC = 40 A, VCC = 400 V,VGE = 15 V, TJ = 175 °C
Figure 18. Switching times vs collector current
IGBT180420181314STC
10 2
10 1 0 20 40 60 80
t (ns)
IC (A)
td(off)
VCC = 400 V, VGE = 15 V, RG = 4.7 Ω, TJ = 175 °C
tf
STGWA40HP65FB2Electrical characteristics (curves)
DS12538 - Rev 3.0 page 7/16
Figure 19. Switching times vs gate resistance
IGBT090420181406SLG
10 2
10 1 0 10 20 30 40 RG (Ω)
t (ns)
td(off)
tr
VCC = 400 V, VGE = 15 V, IC = 40 A, TJ = 175 °C
Figure 20. Reverse recovery current vs diode currentslope
IGBT120120160800RRC
12
10
8
6
4
2
00 300 600 900 1200
Irrm(A)
di/dt (A/µs)
VCC =400 V, VGE = 15 V, IF = 5 A,TJ =175 °C
Figure 21. Reverse recovery time vs diode current slope
IGBT120120160820RRT
350
300
250
200
150
1000 300 600 900 1200
trr (ns) VCC = 400 V, VGE = 15 V,
IF = 5 A, TJ = 175 °C
di/dt (A/μs)
Figure 22. Reverse recovery charge vs diode currentslope
IGBT120120160824RRQ
50
48
46
44
420 300 600 900 1200
Qrr(µC)
di/dt (A/µs)
VCC = 400 V, VGE = 15 V, IF = 5 A,Tj = 175 °C
Figure 23. Reverse recovery energy vs diode current slope
IGBT120120160826RRE
5
4
3
20 300 600 900 1200
Err(μJ)
di/dt (A/µs)
VCC = 400 V, VGE = 15 V,IF = 5 A, Tj = 175 °C
STGWA40HP65FB2Electrical characteristics (curves)
DS12538 - Rev 3.0 page 8/16
Figure 24. Thermal impedance for IGBT
10 10 10 10 10 tp(s)-5 -4 -3 -2 -110-2
10-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-cδ=tp/t
tp
t
Single pulse
δ=0.5
ZthTO2T_B
Figure 25. Thermal impedance for diode
STGWA40HP65FB2Electrical characteristics (curves)
DS12538 - Rev 3.0 page 9/16
3 Test circuits
Figure 26. Test circuit for inductive load switching
A AC
E
G
B
RG+
-
G
C 3.3µF
1000µF
L=100 µH
VCC
E
D.U.T
B
AM01504v1
Figure 27. Gate charge test circuit
GADG160420181048IG
RL
VCC
D.U.T.100 Ω IG = CONSTVi ≤ VGMAX
2200 μF
2.7 kΩ
PW1 kΩ
47 kΩ
Figure 28. Switching waveform
AM01506v1
90%
10%
90%
10%
VG
VCE
IC td(on)
ton
tr(Ion)
td(off)
toff
tf
tr(Voff)
tcross
90%
10%
Figure 29. Diode reverse recovery waveform
t
GADG180720171418SA
10%
VRRM
dv/dt
di/dt
IRRM
IF
trr
ts tf
Qrr
IRRM
STGWA40HP65FB2Test circuits
DS12538 - Rev 3.0 page 10/16
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.
STGWA40HP65FB2Package information
DS12538 - Rev 3.0 page 11/16
4.1 TO-247 long leads package information
Figure 30. TO-247 long leads package outline
8463846_2_F
STGWA40HP65FB2TO-247 long leads package information
DS12538 - Rev 3.0 page 12/16
Table 7. TO-247 long leads package mechanical data
Dim.mm
Min. Typ. Max.
A 4.90 5.00 5.10
A1 2.31 2.41 2.51
A2 1.90 2.00 2.10
b 1.16 1.26
b2 3.25
b3 2.25
c 0.59 0.66
D 20.90 21.00 21.10
E 15.70 15.80 15.90
E2 4.90 5.00 5.10
E3 2.40 2.50 2.60
e 5.34 5.44 5.54
L 19.80 19.92 20.10
L1 4.30
P 3.50 3.60 3.70
Q 5.60 6.00
S 6.05 6.15 6.25
STGWA40HP65FB2TO-247 long leads package information
DS12538 - Rev 3.0 page 13/16
Revision history
Table 8. Document revision history
Date Version Changes
18-Apr-2018 1 Initial release. The document status is production data.
05-Jul-2018 2
Modified Table Switching characteristics (inductive load).
Modified Figure Switching energy vs temperature.
Minor text changes.
24-Jul-2019 3Updated Table 1. Absolute maximum ratings and Table 2. Thermal data.
Minor text changes.
STGWA40HP65FB2
DS12538 - Rev 3.0 page 14/16
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.1 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
STGWA40HP65FB2Contents
DS12538 - Rev 3.0 page 15/16
IMPORTANT NOTICE – PLEASE READ CAREFULLY
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© 2019 STMicroelectronics – All rights reserved
STGWA40HP65FB2
DS12538 - Rev 3.0 page 16/16