TLE2022, TLE2022A, TLE2022B, TLE2022Y …docs-asia.electrocomponents.com/webdocs/0026/0900766b80026a22.pdfTLE2022, TLE2022A, TLE2022B, TLE2022Y EXCALIBUR HIGH-SPEED LOW-POWER PRECISION

TLE2022, TLE2022A, TLE2022B, TLE2022Y EXCALIBUR HIGH-SPEED LOW-POWER PRECISION

DUAL OPERATIONAL AMPLIFIERS SLOS027C – MAY 1989 – REVISED AUGUST 1994

Copyright 1994, Texas Instruments Incorporated

5–1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

• Supply Curren t . . . 500 µA Max

• High Unity-Gain Bandwidt h . . . 2.8 MHz Typ

• High Slew Rat e . . . 0.45 V/µs Min

• Supply-Current Change Over MilitaryTemperature Rang e . . . 37 µA Typ

• Specified for Both 5-V Single-Supply and±15-V Operation

• Phase-Reversal Protection

• High Open-Loop Gain 10 V/µV (140 dB) Typ

• Low Offset Voltage . . . 150 µV Max

• Offset Voltage Drift With Time0.005 µV/mo Typ

• Low Input Bias Curren t . . . 50 nA Max

• Low Noise Voltage . . . 19 nV/√Hz Typ at f = 10 Hz

description

The TLE2022, TLE2022A, and TLE2022Bdevices are precision, high-speed, low-poweroperational amplifiers using Texas InstrumentsExcalibur process. These devices combine thebest features of the OP221 with highly improvedslew rate and unity-gain bandwidth.

The complementary bipolar Excalibur processutilizes isolated vertical pnp transistors that yielddramatic improvement in unity-gain bandwidthand slew rate over similar devices.

The addition of a patent-pending bias circuit inconjunction with this process results in extremelystable parameters with both time andtemperature. This means that a precision deviceremains a precision device even with changes intemperature and over years of use.

This combination of excellent dc performance witha common-mode input voltage range that includesthe negative rail makes these devices the ideal choice for low-level signal conditioning applications in eithersingle-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitrythat eliminates an unexpected change in output states when one of the inputs goes below the negative supplyrail.

AVAILABLE OPTIONS

TV

PACKAGED DEVICESCHIP

TAVIOmaxAT 25°C

SMALLOUTLINE

(D)

SSOP(DBLE)

CHIPCARRIER

(FK)

CERAMICDIP(JG)

PLASTICDIP(P)

TSSOP(PWLE)

CHIPFORM

(Y)

0°Cto

300 µV TLE2022ACD —— —

TLE2022ACP —TLE2022Yto

70°C

300 µV500 µV

TLE2022ACDTLE2022CD TLE2022CDBLE

— —TLE2022ACPTLE2022CP TLE2022CPWLE

TLE2022Y

–40°Cto

300 µV TLE2022AID— — — TLE2022AIP — —to

85°C

300 µV500 µV

TLE2022AIDTLE2022ID

— — — TLE2022AIPTLE2022IP

— —

–55°C 150 µV — — TLE2022BMJG —55 Cto

150 µV300 µV

TLE2022AMD — TLE2022AMFK

TLE2022BMJGTLE2022AMJG

TLE2022AMP — —

125°Cµ

500 µV TLE2022MD TLE2022MFK TLE2022MJG TLE2022MP

The D packages are available taped and reeled. Add the suffix R (e.g., TLE2022CDR). The DB and PW packages are only available left-end tapedand reeled. Chips are tested at 25°C.

LARGE-SIGNAL DIFFERNTIAL VOLTAGEAMPLIFICATION AND PHASE SHIFT

vsFREQUENCY

f = 2.8 MHz

f – Frequency – Hz

Typ ICC = 235 µA/Amplifier

Phase Shift

φm = 52°

AVD

CL = 30 pFTA = 25°C

RL = 10 kΩVCC± = ±15 V

200

180°

160°

140°

120°

100°

80°

60°120

100

80

60

40

20

0

10 M1 M100 k10 k1 k10010–20

0 –

Pha

se S

hift

ÁÁφ

AV

D –

Lar

ge-S

igna

l Diff

eren

tial

ÁÁÁÁÁÁ

AV

D Volta

ge A

mpl

ifica

tion

– dB

PRODUCTION DATA information is current as of publication date.Products conform to specifications per the terms of Texas Instrumentsstandard warranty. Production processing does not necessarily includetesting of all parameters.

TLE2022, TLE2022A, TLE2022B, TLE2022YEXCALIBUR HIGH-SPEED LOW-POWER PRECISIONDUAL OPERATIONAL AMPLIFIERS

SLOS027C – MAY 1989 – REVISED AUGUST 1994

5–2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

description (continued)

Available packaging options include small-outline and chip-carrier versions for high-density systemsapplications.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterizedfor operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full militarytemperature range of –55°C to 125°C.

1

2

3

4

8

7

6

5

1OUT1IN –1IN +

VCC –/GND

VCC +2OUT2IN –2IN +

D, DB, JG, P, OR PW PACKAGE(TOP VIEW)

NC – No internal connection

3 2 1 20 19

9 10 11 12 13

4

5

6

7

8

18

17

16

15

14

NC2OUTNC2IN –NC

NC1IN –

NC1IN +

NC

FK PACKAGE(TOP VIEW)

NC

1OU

TN

C

NC

NC

NC

GN

DN

C2I

N +

CC

–V

/

CC

+V

TLE2022, TLE2022A, TLE2022B, TLE2022YEXCALIBUR HIGH-SPEED LOW-POWER PRECISION

DUAL OPERATIONAL AMPLIFIERSSLOS027C – MAY 1989 – REVISED AUGUST 1994


TLE2022Y chip information

This chip, when properly assembled, displays characteristics similar to TLE2022. Thermal compression orultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductiveepoxy or a gold-silicon preform.

BONDING PAD ASSIGNMENTS

CHIP THICKNESS: 15 TYPICAL

BONDING PADS: 4 × 4 MINIMUM

TJmax = 150°C TOLERANCES ARE ±10%.

ALL DIMENSIONS ARE IN MILS.

PIN (4) IS INTERNALLY CONNECTEDTO BACKSIDE OF CHIP.

+

–OUT

IN+

IN–

VCC+(8)

(6)

(3)

(2)

(5)

(1)

–

+(7) IN+

IN–OUT

(4)

VCC–80

86

(1)

(2) (3)

(4)

(5)

(6)(7)

(8)




equivalent schematic (each amplifier)

IN –

Q23 Q25

Q1

Q2

Q3

Q4

Q5

Q6

Q7

Q8

Q9

Q10

Q11

Q12

Q13

Q14

Q15

Q16

Q17

Q18

Q19

Q20

Q21

Q22

Q24

Q26

Q27

Q28

Q29

Q30

Q31

Q32

Q33

Q34

Q35

Q36

Q37

Q38

Q39

Q40D1 D2

D3

D4IN +

OUT

VCC+

VCC–/GND

C1

R1

R2

R3

R4

R5

C2

R6

R7

C4

C3

COMPONENT COUNT

TransistorsDiodesResistorsCapacitors

808

148




absolute maximum ratings over operating free-air temperature range (unless otherwise noted) †

Supply voltage, VCC+ (see Note 1) 20 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Supply voltage, VCC– (see Note 1) –20 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Differential input voltage, VID (see Note 2) ±0.6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input voltage range, VI (any input, see Note 1) VCC±. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input current, II (each input) ±1 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output current, IO (each output) ±30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total current into VCC+ 80 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total current out of VCC– 80 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Duration of short-circuit current at (or below) 25°C (see Note 3) unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous total dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating free-air temperature range, TA: C suffix 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

I suffix –40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M suffix –55°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Case temperature for 60 seconds: FK package 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D, DB, P, or PW package 260°C. . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: JG package 300°C. . . . . . . . . . . . . . . . . . . .

† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, andfunctional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is notimplied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. All voltage values, except differential voltages, are with respect to the midpoint between VCC+ and VCC –.2. Differential voltages are at IN+ with respect to IN–. Excessive current will flow if a differential input voltage in excess of approximately

±600 mV is applied between the inputs unless some limiting resistance is used.3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum

dissipation rating is not exceeded.

DISSIPATION RATING TABLE

PACKAGETA ≤ 25°C DERATING FACTOR TA = 70°C TA = 85°C TA = 125°C

PACKAGETA ≤ 25 C

POWER RATINGDERATING FACTORABOVE TA = 25°C

TA 70 CPOWER RATING

TA 85 CPOWER RATING

TA 125 CPOWER RATING

D 725 mW 5.8 mW/°C 464 mW 377 mW 145 mW

DB, PW 525 mW 4.2 mW/°C 336 mW 273 mW —

FK 1375 mW 11.0 mW/°C 880 mW 715 mW 275 mW

JG 1050 mW 8.4 mW/°C 672 mW 546 mW 210 mW

P 1000 mW 8.0 mW/°C 640 mW 520 mW 200 mW

recommended operating conditions

C SUFFIX I SUFFIX M SUFFIXUNIT

MIN MAX MIN MAX MIN MAXUNIT

Supply voltage, VCC ± ±2 ±20 ±2 ±20 ±2 ±20 V

Common-mode input voltage VICVCC = 5 V 0 3.5 0 3.2 0 3.2

VCommon-mode input voltage, VICVCC± = ±15 V –15 13.5 –15 13.2 –15 13.2

V

Operating free-air temperature, TA 0 70 –40 85 –55 125 °C

TLE2022, TLE2022A, TLE2022B, TLE2022YEXCALIBUR HIGH-SPEED LOW-POWER PRECISIONDUAL OPERATIONAL AMPLIFIERSSLOS027C – MAY 1989 – REVISED AUGUST 1994

5–6 POST OFFICE BOX 655303 DALLAS, TEXAS 75265•

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POST OFFICE BOX 655303 DALLAS, TEXAS 75265• 5–7

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tric

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spe

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Nl

d

25°C

550

700

550

700

550

700

µAI C

CS

uppl

y cu

rren

t

VO

=0

No

load

Ful

l ran

ge70

070

070

0µA

∆IC

CS

uppl

y cu

rren

t cha

nge

over

VO

= 0

,N

o lo

ad

Ful

lran

ge9

99

µA∆I

CC

ppy

gop

erat

ing

tem

pera

ture

rang

eF

ull r

ange

99

9µA

†F

ull r

ange

is 0

°C to

70°

C.

NO

TE

4:

Typi

cal v

alue

s ar

e ba

sed

on th

e in

put o

ffset

vol

tage

shi

ft ob

serv

ed th

roug

h 16

8 ho

urs

of o

pera

ting

life

test

at T

A =

150

°C e

xtra

pola

ted

to T

A =

25°

C u

sing

the

Arr

heni

useq

uatio

n an

d as

sum

ing

an a

ctiv

atio

n en

ergy

of 0

.96

eV.



oper

atin

g ch

arac

teris

tics,

VC

C =

5 V

, TA

= 2

5°C

PAR

AM

ET

ER

TE

ST

CO

ND

ITIO

NS

TLE

2022

CT

LE20

22A

CT

LE20

22B

CU

NIT

PAR

AM

ET

ER

TE

ST

CO

ND

ITIO

NS

MIN

TY

PM

AX

MIN

TY

PM

AX

MIN

TY

PM

AX

UN

IT

SR

Sle

w r

ate

at u

nity

gai

nV

O =

1 V

to 3

V,

See

Fig

ure

10.

50.

50.

5V

/µs

Vn

Equ

ival

ent i

nput

noi

se v

olta

gef =

10

Hz

2150

2150

2150

nV/√

Hz

Vn

Equ

ival

ent i

nput

noi

se v

olta

ge(s

ee F

igur

e 2)

f = 1

kH

z17

3017

3017

30nV

/√H

z

VN

(PP

)P

eak-

to-p

eak

equi

vale

ntin

putn

oise

volta

gef =

0.1

to 1

Hz

0.16

0.16

0.16

µVV

N(P

P)

Pea

k-to

-pea

k eq

uiva

lent

inpu

t noi

se v

olta

gef =

0.1

to 1

0 H

z0.

470.

470.

47µV

I nE

quiv

alen

t inp

ut n

oise

cur

rent

0.1

0.1

0.1

pA/√

Hz

B1

Uni

ty-g

ain

band

wid

thS

ee F

igur

e 3

1.7

1.7

1.7

MH

z

φ mP

hase

mar

gin

at u

nity

gai

nS

ee F

igur

e 3

47°

47°

47°

oper

atin

g ch

arac

teris

tics

at s

peci

fied

free

-air

tem

pera

ture

, VC

C±

= ±

15 V

PAR

AM

ET

ER

TE

ST

CO

ND

ITIO

NS

T A†

TLE

2022

CT

LE20

22A

CT

LE20

22B

CU

NIT

PAR

AM

ET

ER

TE

ST

CO

ND

ITIO

NS

T A†

MIN

TY

PM

AX

MIN

TY

PM

AX

MIN

TY

PM

AX

UN

IT

SR

Sle

wra

teat

unity

gain

VO

=±

10V

See

Fig

ure

125

°C0.

450.

650.

450.

650.

450.

65V

/µs

SR

Sle

w r

ate

at u

nity

gai

nV

O =

±10

V,

See

Fig

ure

1F

ull r

ange

0.45

0.45

0.45

V/µ

s

Vn

Equ

ival

ent i

nput

noi

sef =

10

Hz

25°C

1950

1950

1950

nV/√

Hz

Vn

Equ

ival

ent i

nput

noi

sevo

ltage

(se

e F

igur

e 2)

f = 1

kH

z25

°C15

3015

3015

30nV

/√H

z

VN

(PP

)P

eak-

to-p

eak

equi

vale

ntf =

0.1

to 1

Hz

25°C

0.16

0.16

0.16

µVV

N(P

P)

Pea

kto

peak

equ

ival

ent

inpu

t noi

se v

olta

gef =

0.1

to 1

0 H

z25

°C0.

470.

470.

47µV

I nE

quiv

alen

t inp

ut n

oise

cur

rent

25°C

0.1

0.1

0.1

pA/√

Hz

B1

Uni

ty-g

ain

band

wid

thS

ee F

igur

e 3

25°C

2.8

2.8

2.8

MH

z

φ mP

hase

mar

gin

at u

nity

gai

nS

ee F

igur

e 3

25°C

52°

52°

52°

†F

ull r

ange

is 0

°C to

70°

C.




elec

tric

al c

hara

cter

istic

s at

spe

cifie

d fr

ee-a

ir te

mpe

ratu

re, V

CC

= 5

V (

unle

ss o

ther

wis

e no

ted)

PAR

AM

ET

ER

TE

ST

CO

ND

ITIO

NS

T A†

TLE

2022

IT

LE20

22A

IT

LE20

22B

IU

NIT

PAR

AM

ET

ER

TE

ST

CO

ND

ITIO

NS

T A†

MIN

TY

PM

AX

MIN

TY

PM

AX

MIN

TY

PM

AX

UN

IT

VIO

Inpu

toffs

etvo

ltage

V0

R50

Ω

25°C

600

400

250

µVV

IOIn

put o

ffset

vol

tage

V0

R50

Ω

Ful

l ran

ge80

055

040

0µV

α VIO

Tem

pera

ture

coe

ffici

ent o

f

V0

R50

Ω

Ful

lran

ge2

22

µV/°

Cα V

IOTe

mpe

ratu

re c

oeffi

cien

t of

inpu

t offs

et v

olta

ge

V0

R50

Ω

Ful

l ran

ge2

22

µV/°

C

Inpu

t offs

et v

olta

ge lo

ng-t

erm

VIC

=0

RS

=50

Ω25

°C0

005

000

50

005

µV/m

oIn

put o

ffset

vol

tage

long

term

drift

(se

e N

ote

4)V

IC =

0,

RS

= 5

0 Ω

25°C

0.00

50.

005

0.00

5µV

/mo

I IOIn

puto

ffset

curr

ent

25°C

0.5

50.

44

0.3

3nA

I IOIn

put o

ffset

cur

rent

Ful

l ran

ge5

43

nA

I IBIn

putb

ias

curr

ent

25°C

3570

3365

3060

nAI IB

Inpu

t bia

s cu

rren

tF

ull r

ange

7065

60nA

VC

di

R50

Ω

25°C

0–

0.3

0–

0.3

0–

0.3

VV

Cd

iR

50Ω

25°C

0 to0.

3 to0 to

0.3 to

0 to0.

3 to

VV

ICR

Com

mon

-mod

e in

put

RS

=50

Ω3.

54

3.5

43.

54

VV

ICR

Com

mon

mod

e in

put

volta

ge r

ange

RS

= 5

0 Ω

Fll

00

0V

gg

Ful

l ran

ge0 to

0 to0 to

g3.

23.

23.

2

VO

HH

igh-

leve

lout

putv

olta

ge

R10

kΩ

25°C

44.

34

4.3

44.

3V

VO

HH

igh-

leve

l out

put v

olta

ge

RL

=10

kΩF

ull r

ange

3.9

3.9

3.9

V

VO

LLo

w-le

velo

utpu

tvol

tage

RL

= 1

0 kΩ

25°C

0.7

0.8

0.7

0.8

0.7

0.8

VV

OL

Low

-leve

l out

put v

olta

geF

ull r

ange

0.9

0.9

0.9

V

AV

DLa

rge-

sign

al d

iffer

entia

lV

O=

14

Vto

4V

RL

=10

kΩ

25°C

0.3

1.5

0.4

1.5

0.5

1.5

V/µ

VA

VD

Larg

esi

gnal

diff

eren

tial

volta

ge a

mpl

ifica

tion

VO

= 1

.4 V

to 4

V,

RL

= 1

0 kΩ

Ful

l ran

ge0.

20.

20.

2V

/µV

CM

RR

Com

mon

-mod

ere

ject

ion

ratio

VIC

=V

ICR

min

RS

=50

Ω25

°C85

100

8710

290

105

dBC

MR

RC

omm

on-m

ode

reje

ctio

n ra

tioV

IC =

VIC

Rm

in,

RS

= 5

0 Ω

Ful

l ran

ge80

8285

dB

k SV

RS

uppl

y-vo

ltage

rej

ectio

n ra

tioV

CC

=5

Vto

30V

25°C

100

115

103

118

105

120

dBk S

VR

Sup

ply

volta

ge r

ejec

tion

ratio

(∆V

CC

±/∆

VIO

)V

CC

= 5

V to

30

VF

ull r

ange

9598

100

dB

I CC

Sup

ply

curr

ent

V2

5V

Nl

d

25°C

450

600

450

600

450

600

µAI C

CS

uppl

y cu

rren

t

VO

=2

5V

No

load

Ful

l ran

ge60

060

060

0µA

∆IC

CS

uppl

y cu

rren

t cha

nge

over

VO

= 2

.5 V

,N

o lo

ad

Ful

lran

ge15

1515

µA∆I

CC

ppy

gop

erat

ing

tem

pera

ture

rang

eF

ull r

ange

1515

15µA

†F

ull r

ange

is –

40°C

to 8

5°C

.N

OT

E 4

:Ty

pica

l val

ues

are

base

d on

the

inpu

t offs

et v

olta

ge s

hift

obse

rved

thro

ugh

168

hour

s of

ope

ratin

g lif

e te

st a

t TA

= 1

50°C

ext

rapo

late

d to

TA

= 2

5°C

usi

ng th

e A

rrhe

nius

equ

atio

nan

d as

sum

ing

an a

ctiv

atio

n en

ergy

of 0

.96

eV.



elec

tric

al c

hara

cter

istic

s at

spe

cifie

d fr

ee-a

ir te

mpe

ratu

re, V

CC

± =

±15

V (

unle

ss o

ther

wis

e no

ted)

PAR

AM

ET

ER

TE

ST

CO

ND

ITIO

NS

T A†

TLE

2022

IT

LE20

22A

IT

LE20

22B

IU

NIT

PAR

AM

ET

ER

TE

ST

CO

ND

ITIO

NS

T A†

MIN

TY

PM

AX

MIN

TY

PM

AX

MIN

TY

PM

AX

UN

IT

VIO

Inpu

toffs

etvo

ltage

V0

R50

Ω

25°C

150

500

120

300

7015

0µV

VIO

Inpu

t offs

et v

olta

ge

V0

R50

Ω

Ful

l ran

ge70

045

030

0µV

α VIO

Tem

pera

ture

coe

ffici

ent o

f

V0

R50

Ω

Ful

lran

ge2

22

µV/°

Cα V

IOTe

mpe

ratu

re c

oeffi

cien

t of

inpu

t offs

et v

olta

ge

V0

R50

Ω

Ful

l ran

ge2

22

µV/°

C

Inpu

t offs

et v

olta

ge lo

ng-t

erm

VIC

=0

RS

=50

Ω25

°C0

006

000

60

006

µV/m

oIn

put o

ffset

vol

tage

long

term

drift

(se

e N

ote

4)V

IC =

0,

RS

= 5

0 Ω

25°C

0.00

60.

006

0.00

6µV

/mo

I IOIn

puto

ffset

curr

ent

25°C

0.5

50.

44

0.3

3nA

I IO In

put o

ffset

cur

rent

Ful

l ran

ge5

43

nA

I IBIn

putb

ias

curr

ent

25°C

3570

3365

3060

nAI IB

Inpu

t bia

s cu

rren

tF

ull r

ange

7065

60nA

VC

di

R50

Ω

25°C

–15

–15

.3–

15–

15.3

–15

–15

.3

VV

Cd

iR

50Ω

25°C

15 to15

.3 to15 to

15.3 to

15 to15

.3 to

VV

ICR

Com

mon

-mod

e in

put

RS

=50

Ω13

.514

13.5

1413

.514

VV

ICR

Com

mon

mod

e in

put

volta

ge r

ange

RS

= 5

0 Ω

Fll

–15

–15

–15

Vg

g

Ful

l ran

ge15 to

15 to15 to

g13

.213

.213

.2

VO

MM

axim

um p

ositi

ve p

eak

R10

kΩ

25°C

1414

.314

14.3

1414

.3V

VO

M+

Max

imum

pos

itive

pea

kou

tput

vol

tage

sw

ing

RL

=10

kΩF

ull r

ange

13.9

13.9

13.9

V

VO

MM

axim

um n

egat

ive

peak

RL

= 1

0 kΩ

25°C

–13

.7–

14.1

–13

.7–

14.1

–13

.7–

14.1

VV

OM

–M

axim

um n

egat

ive

peak

outp

ut v

olta

ge s

win

gF

ull r

ange

–13

.6–

13.6

–13

.6V

AV

DLa

rge-

sign

al d

iffer

entia

lV

O=

±10

VR

L=

10kΩ

25°C

0.8

41

71.

510

V/µ

VA

VD

Larg

esi

gnal

diff

eren

tial

volta

ge a

mpl

ifica

tion

VO

= ±

10 V

,R

L =

10

kΩF

ull r

ange

0.8

11.

5V

/µV

CM

RR

Com

mon

-mod

ere

ject

ion

ratio

VIC

=V

ICR

min

RS

=50

Ω25

°C95

106

9710

910

011

2dB

CM

RR

Com

mon

-mod

e re

ject

ion

ratio

VIC

= V

ICR

min

,R

S =

50

ΩF

ull r

ange

9193

96dB

k SV

RS

uppl

y-vo

ltage

rej

ectio

n ra

tioV

CC

=±

25

Vto

±15

V25

°C10

011

510

311

810

512

0dB

k SV

RS

uppl

yvo

ltage

rej

ectio

n ra

tio(∆

VC

C±

/∆V

IO)

VC

C =

±2.

5 V

to ±

15 V

Ful

l ran

ge95

9810

0dB

I CC

Sup

ply

curr

ent

V0

Nl

d

25°C

550

700

550

700

550

700

µAI C

CS

uppl

y cu

rren

t

VO

=0

No

load

Ful

l ran

ge70

070

070

0µA

∆IC

CS

uppl

y cu

rren

t cha

nge

over

VO

= 0

,N

o lo

ad

Ful

lran

ge30

3030

µA∆I

CC

ppy

gop

erat

ing

tem

pera

ture

rang

eF

ull r

ange

3030

30µA

†F

ull r

ange

is –

40°C

to 8

5°C

.N

OT

E 4

:Ty

pica

l val

ues

are

base

d on

the

inpu

t offs

et v

olta

ge s

hift

obse

rved

thro

ugh

168

hour

s of

ope

ratin

g lif

e te

st a

t TA

= 1

50°C

ext

rapo

late

d to

TA

= 2

5°C

usi

ng th

e A

rrhe

nius

equa

tion

and

assu

min

g an

act

ivat

ion

ener

gy o

f 0.9

6 eV

.




oper

atin

g ch

arac

teris

tics,

VC

C =

5 V

, TA

= 2

5°C

PAR

AM

ET

ER

TE

ST

CO

ND

ITIO

NS

TLE

2022

IT

LE20

22A

IT

LE20

22B

IU

NIT

PAR

AM

ET

ER

TE

ST

CO

ND

ITIO

NS

MIN

TY

PM

AX

MIN

TY

PM

AX

MIN

TY

PM

AX

UN

IT

SR

Sle

w r

ate

at u

nity

gai

nV

O =

1 V

to 3

V,

See

Fig

ure

10.

50.

50.

5V

/µs

Vn

Equ

ival

ent i

nput

noi

se v

olta

gef =

10

Hz

2150

2150

2150

nV/√

Hz

Vn

Equ

ival

ent i

nput

noi

se v

olta

ge(s

ee F

igur

e 2)

f = 1

kH

z17

3017

3017

30nV

/√H

z

VN

(PP

)P

eak-

to-p

eak

equi

vale

ntin

putn

oise

volta

gef =

0.1

to 1

Hz

0.16

0.16

0.16

µVV

N(P

P)

Pea

k-to

-pea

k eq

uiva

lent

inpu

t noi

se v

olta

gef =

0.1

to 1

0 H

z0.

470.

470.

47µV

I nE

quiv

alen

t inp

ut n

oise

cur

rent

0.1

0.1

0.1

pA/√

Hz

B1

Uni

ty-g

ain

band

wid

thS

ee F

igur

e 3

1.7

1.7

1.7

MH

z

φ mP

hase

mar

gin

at u

nity

gai

nS

ee F

igur

e 3

47°

47°

47°

oper

atin

g ch

arac

teris

tics

at s

peci

fied

free

-air

tem

pera

ture

, VC

C±

= ±

15 V

PAR

AM

ET

ER

TE

ST

CO

ND

ITIO

NS

T A†

TLE

2022

IT

LE20

22A

IT

LE20

22B

IU

NIT

PAR

AM

ET

ER

TE

ST

CO

ND

ITIO

NS

T A†

MIN

TY

PM

AX

MIN

TY

PM

AX

MIN

TY

PM

AX

UN

IT

SR

Sle

wra

teat

unity

gain

VO

=±

10V

See

Fig

ure

125

°C0.

450.

650.

450.

650.

450.

65V

/µs

SR

Sle

w r

ate

at u

nity

gai

nV

O =

±10

V,

See

Fig

ure

1F

ull r

ange

0.42

0.42

0.42

V/µ

s

Vn

Equ

ival

ent i

nput

noi

se v

olta

gef =

10

Hz

25°C

1950

1950

1950

nV/√

Hz

Vn

Equ

ival

ent i

nput

noi

se v

olta

ge(s

ee F

igur

e 2)

f = 1

kH

z25

°C15

3015

3015

30nV

/√H

z

VN

(PP

)P

eak-

to-p

eak

equi

vale

nt in

put

f = 0

.1 to

1 H

z25

°C0.

160.

160.

16µV

VN

(PP

)P

eak

tope

ak e

quiv

alen

t inp

utno

ise

volta

gef =

0.1

to 1

0 H

z25

°C0.

470.

470.

47µV

I nE

quiv

alen

t inp

ut n

oise

cur

rent

25°C

0.1

0.1

0.1

pA/√

Hz

B1

Uni

ty-g

ain

band

wid

thS

ee F

igur

e 3

25°C

2.8

2.8

2.8

MH

z

φ mP

hase

mar

gin

at u

nity

gai

nS

ee F

igur

e 3

25°C

52°

52°

52°

†F

ull r

ange

is –

40°C

to 8

5°C

.



elec

tric

al c

hara

cter

istic

s at

spe

cifie

d fr

ee-a

ir te

mpe

ratu

re, V

CC

= 5

V (

unle

ss o

ther

wis

e no

ted)

PAR

AM

ET

ER

TE

ST

CO

ND

ITIO

NS

T A†

TLE

2022

MT

LE20

22A

MT

LE20

22B

MU

NIT

PAR

AM

ET

ER

TE

ST

CO

ND

ITIO

NS

T A†

MIN

TY

PM

AX

MIN

TY

PM

AX

MIN

TY

PM

AX

UN

IT

VIO

Inpu

toffs

etvo

ltage

V0

R50

Ω

25°C

600

400

250

µVV

IOIn

put o

ffset

vol

tage

V0

R50

Ω

Ful

l ran

ge80

055

040

0µV

α VIO

Tem

pera

ture

coe

ffici

ent o

f

V0

R50

Ω

Ful

lran

ge2

22

µV/°

Cα V

IOTe

mpe

ratu

re c

oeffi

cien

t of

inpu

t offs

et v

olta

ge

V0

R50

Ω

Ful

l ran

ge2

22

µV/°

C

Inpu

t offs

et v

olta

ge lo

ng-t

erm

VIC

=0

RS

=50

Ω25

°C0

005

000

50

005

µV/m

oIn

put o

ffset

vol

tage

long

term

drift

(se

e N

ote

4)V

IC =

0,

RS

= 5

0 Ω

25°C

0.00

50.

005

0.00

5µV

/mo

I IOIn

puto

ffset

curr

ent

25°C

0.5

50.

44

0.3

3nA

I IOIn

put o

ffset

cur

rent

Ful

l ran

ge5

43

nA

I IBIn

putb

ias

curr

ent

25°C

3570

3365

3060

nAI IB

Inpu

t bia

s cu

rren

tF

ull r

ange

7065

60nA

VC

di

R50

Ω

25°C

0–

0.3

0–

0.3

0–

0.3

VV

Cd

iR

50Ω

25°C

0 to0.

3 to0 to

0.3 to

0 to0.

3 to

VV

ICR

Com

mon

-mod

e in

put

RS

=50

Ω3.

54

3.5

43.

54

VV

ICR

Com

mon

mod

e in

put

volta

ge r

ange

RS

= 5

0 Ω

Fll

00

0V

gg

Ful

l ran

ge0 to

0 to0 to

g3.

23.

23.

2

VO

HH

igh-

leve

lout

putv

olta

ge

R10

kΩ

25°C

44.

34

4.3

44.

3V

VO

HH

igh-

leve

l out

put v

olta

ge

RL

=10

kΩF

ull r

ange

3.8

3.8

3.8

V

VO

LLo

w-le

velo

utpu

tvol

tage

RL

= 1

0 kΩ

25°C

0.7

0.8

0.7

0.8

0.7

0.8

VV

OL

Low

-leve

l out

put v

olta

geF

ull r

ange

0.95

0.95

0.95

V

AV

DLa

rge-

sign

al d

iffer

entia

lV

O=

14

Vto

4V

RL

=10

kΩ

25°C

0.3

1.5

0.4

1.5

0.5

1.5

V/µ

VA

VD

Larg

esi

gnal

diff

eren

tial

volta

ge a

mpl

ifica

tion

VO

= 1

.4 V

to 4

V,

RL

= 1

0 kΩ

Ful

l ran

ge0.

10.

10.

1V

/µV

CM

RR

Com

mon

-mod

ere

ject

ion

ratio

VIC

=V

ICR

min

RS

=50

Ω25

°C85

100

8710

290

105

dBC

MR

RC

omm

on-m

ode

reje

ctio

n ra

tioV

IC =

VIC

Rm

in,

RS

= 5

0 Ω

Ful

l ran

ge80

8285

dB

k SV

RS

uppl

y-vo

ltage

rej

ectio

n ra

tioV

CC

=5

Vto

30V

25°C

100

115

103

118

105

120

dBk S

VR

Sup

ply

volta

ge r

ejec

tion

ratio

(∆V

CC

±/∆

VIO

)V

CC

= 5

V to

30

VF

ull r

ange

9598

100

dB

I CC

Sup

ply

curr

ent

V2

5V

Nl

d

25°C

450

600

450

600

450

600

µAI C

CS

uppl

y cu

rren

t

VO

=2

5V

No

load

Ful

l ran

ge60

060

060

0µA

∆IC

CS

uppl

y cu

rren

t cha

nge

over

VO

= 2

.5 V

,N

o lo

ad

Ful

lran

ge37

3737

µA∆I

CC

ppy

gop

erat

ing

tem

pera

ture

rang

eF

ull r

ange

3737

37µA

†F

ull r

ange

is –

55°C

to 1

25°C

.N

OT

E 4

:Ty

pica

l val

ues

are

base

d on

the

inpu

t offs

et v

olta

ge s

hift

obse

rved

thro

ugh

168

hour

s of

ope

ratin

g lif

e te

st a

t TA

= 1

50°C

ext

rapo

late

d to

TA

= 2

5°C

usi

ng th

e A

rrhe

nius

equ

atio

nan

d as

sum

ing

an a

ctiv

atio

n en

ergy

of 0

.96

eV.




elec

tric

al c

hara

cter

istic

s at

spe

cifie

d fr

ee-a

ir te

mpe

ratu

re, V

CC

± =

±15

V (

unle

ss o

ther

wis

e no

ted)

PAR

AM

ET

ER

TE

ST

CO

ND

ITIO

NS

T A†

TLE

2022

MT

LE20

22A

MT

LE20

22B

MU

NIT

PAR

AM

ET

ER

TE

ST

CO

ND

ITIO

NS

T A†

MIN

TY

PM

AX

MIN

TY

PM

AX

MIN

TY

PM

AX

UN

IT

VIO

Inpu

toffs

etvo

ltage

V0

R50

Ω

25°C

150

500

120

300

7015

0µV

VIO

Inpu

t offs

et v

olta

ge

V0

R50

Ω

Ful

l ran

ge70

045

030

0µV

α VIO

Tem

pera

ture

coe

ffici

ent o

f

V0

R50

Ω

Ful

lran

ge2

22

µV/°

Cα V

IOTe

mpe

ratu

re c

oeffi

cien

t of

inpu

t offs

et v

olta

ge

V0

R50

Ω

Ful

l ran

ge2

22

µV/°

C

Inpu

t offs

et v

olta

ge lo

ng-t

erm

VIC

=0

RS

=50

Ω25

°C0

006

000

60

006

µV/m

oIn

put o

ffset

vol

tage

long

term

drift

(se

e N

ote

4)V

IC =

0,

RS

= 5

0 Ω

25°C

0.00

60.

006

0.00

6µV

/mo

I IOIn

puto

ffset

curr

ent

25°C

0.5

50.

44

0.3

3nA

I IO In

put o

ffset

cur

rent

Ful

l ran

ge5

43

nA

I IBIn

putb

ias

curr

ent

25°C

3570

3365

3060

nAI IB

Inpu

t bia

s cu

rren

tF

ull r

ange

7065

60nA

VC

di

R50

Ω

25°C

–15

–15

.3–

15–

15.3

–15

–15

.3

VV

Cd

iR

50Ω

25°C

15 to15

.3 to15 to

15.3 to

15 to15

.3 to

VV

ICR

Com

mon

-mod

e in

put

RS

=50

Ω13

.514

13.5

1413

.514

VV

ICR

Com

mon

mod

e in

put

volta

ge r

ange

RS

= 5

0 Ω

Fll

–15

–15

–15

Vg

g

Ful

l ran

ge15 to

15 to15 to

g13

.213

.213

.2

VO

MM

axim

um p

ositi

ve p

eak

R10

kΩ

25°C

1414

.314

14.3

1414

.3V

VO

M+

Max

imum

pos

itive

pea

kou

tput

vol

tage

sw

ing

RL

=10

kΩF

ull r

ange

13.9

13.9

13.9

V

VO

MM

axim

um n

egat

ive

peak

RL

= 1

0 kΩ

25°C

–13

.7–

14.1

–13

.7–

14.1

–13

.7–

14.1

VV

OM

–M

axim

um n

egat

ive

peak

outp

ut v

olta

ge s

win

gF

ull r

ange

–13

.6–

13.6

–13

.6V

AV

DLa

rge-

sign

al d

iffer

entia

lV

O=

±10

VR

L=

10kΩ

25°C

0.8

41

71.

510

V/µ

VA

VD

Larg

esi

gnal

diff

eren

tial

volta

ge a

mpl

ifica

tion

VO

= ±

10 V

,R

L =

10

kΩF

ull r

ange

0.8

11.

5V

/µV

CM

RR

Com

mon

-mod

ere

ject

ion

ratio

VIC

=V

ICR

min

RS

=50

Ω25

°C95

106

9710

910

011

2dB

CM

RR

Com

mon

-mod

e re

ject

ion

ratio

VIC

= V

ICR

min

,R

S =

50

ΩF

ull r

ange

9193

96dB

k SV

RS

uppl

y-vo

ltage

rej

ectio

n ra

tioV

CC

±=

±2

5V

to±

15V

25°C

100

115

103

118

105

120

dBk S

VR

Sup

ply

volta

ge r

ejec

tion

ratio

(∆V

CC

±/∆

VIO

)V

CC

± =

±2.

5 V

to ±

15 V

Ful

l ran

ge95

9810

0dB

I CC

Sup

ply

curr

ent

V0

Nl

d

25°C

550

700

550

700

550

700

µAI C

CS

uppl

y cu

rren

t

VO

=0

No

load

Ful

l ran

ge70

070

070

0µA

∆IC

CS

uppl

y cu

rren

t cha

nge

over

VO

= 0

,N

o lo

ad

Ful

lran

ge60

6060

µA∆I

CC

ppy

gop

erat

ing

tem

pera

ture

rang

eF

ull r

ange

6060

60µA

†F

ull r

ange

is 0

°C to

70°

C.

NO

TE

4:

Typi

cal v

alue

s ar

e ba

sed

on th

e in

put o

ffset

vol

tage

shi

ft ob

serv

ed th

roug

h 16

8 ho

urs

of o

pera

ting

life

test

at T

A =

150

°C e

xtra

pola

ted

to T

A =

25°

C u

sing

the

Arr

heni

useq

uatio

n an

d as

sum

ing

an a

ctiv

atio

n en

ergy

of 0

.96

eV.



oper

atin

g ch

arac

teris

tics,

VC

C =

5 V

, TA

= 2

5°C

PAR

AM

ET

ER

TE

ST

CO

ND

ITIO

NS

TLE

2022

MT

LE20

22A

MT

LE20

22B

MU

NIT

PAR

AM

ET

ER

TE

ST

CO

ND

ITIO

NS

MIN

TY

PM

AX

MIN

TY

PM

AX

MIN

TY

PM

AX

UN

IT

SR

Sle

w r

ate

at u

nity

gai

nV

O =

1 V

to 3

V,

See

Fig

ure

10.

50.

50.

5V

/µs

Vn

Equ

ival

ent i

nput

noi

se v

olta

gef =

10

Hz

2121

21nV

/√H

zV

nE

quiv

alen

t inp

ut n

oise

vol

tage

(see

Fig

ure

2)f =

1 k

Hz

1717

17nV

/√H

z

VN

(PP

)P

eak-

to-p

eak

equi

vale

ntin

putn

oise

volta

gef =

0.1

to 1

Hz

0.16

0.16

0.16

µVV

N(P

P)

Pea

k-to

-pea

k eq

uiva

lent

inpu

t noi

se v

olta

gef =

0.1

to 1

0 H

z0.

470.

470.

47µV

I nE

quiv

alen

t inp

ut n

oise

cur

rent

0.1

0.1

0.1

pA/√

Hz

B1

Uni

ty-g

ain

band

wid

thS

ee F

igur

e 3

1.7

1.7

1.7

MH

z

φ mP

hase

mar

gin

at u

nity

gai

nS

ee F

igur

e 3

47°

47°

47°

oper

atin

g ch

arac

teris

tics

at s

peci

fied

free

-air

tem

pera

ture

, VC

C±

= ±

15 V

PAR

AM

ET

ER

TE

ST

CO

ND

ITIO

NS

T A†

TLE

2022

MT

LE20

22A

MT

LE20

22B

MU

NIT

PAR

AM

ET

ER

TE

ST

CO

ND

ITIO

NS

T A†

MIN

TY

PM

AX

MIN

TY

PM

AX

MIN

TY

PM

AX

UN

IT

SR

Sle

wra

teat

unity

gain

VO

=±

10V

See

Fig

ure

125

°C0.

450.

650.

450.

650.

450.

65V

/µs

SR

Sle

w r

ate

at u

nity

gai

nV

O =

±10

V,

See

Fig

ure

1F

ull r

ange

0.4

0.4

0.4

V/µ

s

Vn

Equ

ival

ent i

nput

noi

se v

olta

gef =

10

Hz

25°C

1919

19nV

/√H

zV

nE

quiv

alen

t inp

ut n

oise

vol

tage

(see

Fig

ure

2)f =

1 k

Hz

25°C

1515

15nV

/√H

z

VN

(PP

)P

eak-

to-p

eak

equi

vale

nt in

put

f = 0

.1 to

1 H

z25

°C0.

160.

160.

16µV

VN

(PP

)P

eak

tope

ak e

quiv

alen

t inp

utno

ise

volta

gef =

0.1

to 1

0 H

z25

°C0.

470.

470.

47µV

I nE

quiv

alen

t inp

ut n

oise

cur

rent

25°C

0.1

0.1

0.1

pA/√

Hz

B1

Uni

ty-g

ain

band

wid

thS

ee F

igur

e 3

25°C

2.8

2.8

2.8

MH

z

φ mP

hase

mar

gin

at u

nity

gai

nS

ee F

igur

e 3

25°C

52°

52°

52°

†F

ull r

ange

is 0

°C to

70°

C.




electrical characteristics, V CC = 5 V, TA = 25°C (unless otherwise noted)

PARAMETER TEST CONDITIONSTLE2022Y

UNITPARAMETER TEST CONDITIONSMIN TYP MAX

UNIT

VIO Input offset voltage

V 0 R 50 Ω

150 600 µV

Input offset voltage long-term drift (see Note 4)VIC = 0 RS = 50 Ω

0.005 µV/mo

IIO Input offset currentVIC = 0, RS = 50 Ω

0.5 5 nA

IIB Input bias current 35 70 nA

VICR Common-mode input voltage range RS = 50 Ω0to

3.5

– 0.3to4

V

VOH Maximum high-level output voltageRL = 10 kΩ

4 4.3 V

VOL Maximum low-level output voltageRL = 10 kΩ

0.7 0.8 V

AVD Large-signal differential voltage amplification VO = 1 4 to 4 V RL= 10 kΩ 0 3 1 5 V/µVAVD Large-signal differential voltage amplification VO = 1.4 to 4 V, RL= 10 kΩ 0.3 1.5 V/µV

CMRR Common-mode rejection ratio VIC = VICR min, RS = 50 Ω 85 100 dB

kSVR Supply-voltage rejection ratio (∆VCC± /∆VIO) VCC = 5 V to 30 V 100 115 dB

ICC Supply current VO = 2.5 V, No load 450 600 µA

NOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolatedto TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.

operating characteristics, V CC = 5 V, TA = 25°C

PARAMETER TEST CONDITIONSTLE2022Y

UNITPARAMETER TEST CONDITIONSMIN TYP MAX

UNIT

SR Slew rate at unity gain VO = 1 V to 3 V, See Figure 1 0.5 V/µs

Vn Equivalent input noise voltage (see Figure 2)f = 10 Hz 21 50

nV/√HzVn Equivalent input noise voltage (see Figure 2)f = 1 kHz 17 30

nV/√Hz

VN(PP) Peak-to-peak equivalent input noise voltagef = 0.1 to 1 Hz 0.16

µVVN(PP) Peak-to-peak equivalent input noise voltagef = 0.1 to 10 Hz 0.47

µV

In Equivalent input noise current 0.1 pA/√Hz

B1 Unity-gain bandwidth See Figure 3 1.7 MHz

φm Phase margin at unity gain See Figure 3 47°




PARAMETER MEASUREMENT INFORMATION

–

+

–

+

20 kΩ

5 V

VO

30 pF

VI

(see Note A)20 kΩ

VO

20 kΩ(see Note A)

30 pF

VI

20 kΩ

15 V

–15 V

(a) SINGLE SUPPLY (b) SPLIT SUPPLY

NOTE A: CL includes fixture capacitance.

Figure 1. Slew-Rate Test Circuit

–

+

–

+

2 kΩ

15 V

–15 V

VO

20 Ω 20 Ω

20 Ω

20 Ω

2 kΩ

VO

5 V

2.5 V


Figure 2. Noise-Voltage Test Circuit

5 V

10 kΩ

100 Ω

2.5 VVO

30 pF(see Note A)

10 kΩ

VI VI100 Ω

10 kΩ

–15 V

15 V

(see Note A)30 pF 10 kΩ

VO+

–

+

–



Figure 3. Unity-Gain Bandwidth and Phase-Margin Test Circuit




PARAMETER MEASUREMENT INFORMATION

–15 V

15 V

VI

30 pF(see Note A)

10 kΩ

VO

–

+

5 V

VI

30 pF(see Note A)

10 kΩ

VO

–

+

10 kΩ

10 kΩ

0.1 µF



Figure 4. Small-Signal Pulse-Response Test Circuit

typical values

Typical values presented in this data sheet represent the median (50% point) of device parametric performance.




TYPICAL CHARACTERISTICS

Table of Graphs

FIGURE

VIO Input offset voltage Distribution 5

IIB Input bias currentvs Common-mode input voltage 6

IIB Input bias currentvs Common mode input voltagevs Free-air temperature

67

II Input current vs Differential input voltage 8

VOM Maximum peak output voltagevs Output current 9

VOM Maximum peak output voltagevs Output currentvs Free-air temperature

910

VOH High-level output voltagevs High-level output current 11

VOH High-level output voltagevs High level output currentvs Free-air temperature

1112

VOL Low-level output voltagevs Low-level output current 13

VOL Low-level output voltagevs Low level output currentvs Free-air temperature

1314

VO(PP) Maximum peak-to-peak output voltage swing vs Frequency 15, 16

AVD Large-signal differential voltage amplificationvs Frequency 17

AVD Large-signal differential voltage amplificationvs Frequencyvs Free-air temperature

1718

IOS Short-circuit output currentvs Supply voltage 19, 21

IOS Short-circuit output currentvs Supply voltagevs Free-air temperature

19, 2120, 22

ICC Supply currentvs Supply voltage 23

ICC Supply currentvs Supply voltagevs Free-air temperature

2324

CMRR Common-mode rejection ratio vs Frequency 25

SR Slew rate vs Free-air temperature 26

Pulse responseSmall signal 27, 28

Pulse responseSmall signalLarge signal

27, 2829, 30

VN(PP) Peak-to-peak equivalent input noise voltage0.1 to 1 Hz 31

VN(PP) Peak-to-peak equivalent input noise voltage0.1 to 1 Hz0.1 to 10 Hz

3132

Vn Equivalent input noise voltage vs Frequency 33

B1 Unity-gain bandwidthvs Supply voltage 34

B1 Unity-gain bandwidthvs Supply voltagevs Free-air temperature

3435

Ph ivs Supply voltage 36

φm Phase marginvs Supply voltagevs Load capacitance

3637φm g p

vs Free-air temperature 38

Phase shift vs Frequency 17




TYPICAL CHARACTERISTICS †

–600

Per

cent

age

of U

nits

– %

VIO – Input Offset Voltage – µV

20

2000

–400 –200 0

4

8

12

16

–15IIB

– In

put B

ias

Cur

rent

– n

A

VIC – Common-Mode Input Voltage – V

–50

15–10 –5 0 5 10–20

–25

–30

–35

–40

–45

VCC± = ±15 V

TA = 25°C

400 600

INPUT BIAS CURRENTvs

COMMON-MODE INPUT VOLTAGEDISTRIBUTION OF

INPUT OFFSET VOLTAGE

ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ

398 Amplifiers Tested From 1 Wafer LotVCC± = ±15 V

TA = 25°CP Package

IBI

Figure 5 Figure 6

–75

IIB –

Inpu

t Bia

s C

urre

nt –

nA

TA – Free-Air Temperature – °C

–50

125–50 –25 0 25 50 75 100–20

–25

–30

–35

–40

–45

0

II –

Inpu

t Cur

rent

– m

A

|VID| – Differential Input Voltage – V

1

10

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9VCC± = ±15 VVO = 0VIC = 0

VCC± = ±15 VVIC = 0

ÏÏÏÏTA = 25°C

INPUT CURRENTvs

DIFFERENTIAL INPUT VOLTAGE

INPUT BIAS CURRENTvs

FREE-AIR TEMPERATURE

IBI

I I

Figure 7 Figure 8

† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.





0

VO

M| –

Max

imum

Pea

k O

utpu

t Vol

tage

– V

|IO| – Output Current – mA

16

140

2 4 6

2

4

6

8

10

12

14

–75TA – Free-Air Temperature – °C

15

12512

–50 –25 0 25 50 75 100

12.5

13

13.5

14

14.5

VCC± = ±15 V

TA = 25°C

VOM–

VOM+

VCC± = ±15 V

TA = 25°CRL = 10 kΩ

8 10 12

MAXIMUM PEAK OUTPUT VOLTAGEvs


MAXIMUM PEAK OUTPUT VOLTAGEvs

OUTPUT CURRENT

ÁÁÁÁ

|VO

M

ÏÏÏÏÏÏÏÏ

VOM+

ÏÏÏÏÏÏ

VOM–

VO

M| –

Max

imum

Pea

k O

utpu

t Vol

tage

– V

ÁÁÁÁ

|VO

M

Figure 9 Figure 10

0

VO

H –

Hig

h-Le

vel O

uptp

u V

olta

ge –

V

IOH – High-Level Output Current – mA

5

–100

–2 –4 –6 –8

1

2

3

4


5

1254

–50 –25 0 25 50 75 100

4.4

4.6

4.8

TA = 25°CVCC = 5 V VCC = 5 V

RL = 10 kΩ

No Load

4.2

HIGH-LEVEL OUTPUT VOLTAGEvs

HIGH-LEVEL OUTPUT CURRENT

HIGH-LEVEL OUTPUT VOLTAGEvs


ÁÁÁÁÁÁ

V OH

VO

H –

Hig

h-Le

vel O

uptp

u V

olta

ge –

V

ÁÁÁÁ

V OH

Figure 11 Figure 12






0

VO

L –

Low

-Lev

el O

utpu

t Vol

tage

– V

IOL – Low-Level Output Current – mA

5

30

0.5 1 1.5 2 2.5

1

2

3

4


1

1250

–50 –25 0 25 50 75 100

0.25

0.5

0.75

VCC = 5 VTA = 25°C

IOL = 1 mA

IOL = 0

VCC = 5 V

LOW-LEVEL OUTPUT VOLTAGEvs

LOW-LEVEL OUTPUT CURRENT

LOW-LEVEL OUTPUT VOLTAGEvs


ÁÁÁÁÁÁ

VO

L

VO

L –

Low

-Lev

el O

utpu

t Vol

tage

– V

ÁÁÁÁÁÁ

VO

L

Figure 13 Figure 14

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ100

VO

PP

– M

axim

um P

eak-

to-P

eak

Out

put V

olta

ge –

V


5

1 M0

1

2

3

4

100f – Frequency – Hz

30

1 M0

5

10

15

20

25

1 k 10 k 100 k 1 k 10 k 100 k

MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGEvs

FREQUENCY

MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGEvs

FREQUENCY

ÁÁÁÁÁÁ

V O(P

P)

VO

PP

– M

axim

um P

eak-

to-P

eak

Out

put V

olta

ge –

V

ÁÁÁÁÁÁ

V O(P

P)

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁTA = 25°C

VCC = 5 VRL = 10 kΩ

VCC± = ±15 VRL = 10 kΩTA = 25°C

Figure 15 Figure 16






LARGE-SIGNAL DIFFERENTIAL VOLTAGEAMPLIFICATION

vsFREE-AIR TEMPERATURE

10f – Frequency – Hz

120

10 M–20

100 1 k 10 k 100 k 1 M

0

20

40

60

80

100


1250

–50 –25 0 25 50 75 100

1

80°

100°

120°

140°

160°

200°

60°

180°

Phase Shift

VCC± = ±15 V

ÏÏÏÏVCC = 5 V

AVD

RL = 10 kΩCL = 30 pFTA = 25°C

– P

hase

Shi

ftVCC = 5 V

VCC± = ±15 V

RL = 10 kΩ

2

3

4

5

6

LARGE-SIGNAL DIFFERENTIAL VOLTAGEAMPLIFICATION and PHASE SHIFT

vsFREQUENCY

φ

AV

D –

Lar

ge-S

igna

l Diff

eren

tial

ÁÁÁÁ

AV

D Volta

ge A

mpl

ifica

tion

– dB

AV

D –

Lar

ge-S

igna

l Diff

eren

tial

ÁÁÁÁÁÁ

AV

DVo

ltage

Am

plifi

catio

n –

V/

µV

Figure 17 Figure 18

IOS

– S

hort

-Circ

uit O

utpu

t Cur

rent

– m

A

0|VCC±| – Supply Voltage – V

15

16–15

2 4 6 8 10 12 14 –75TA – Free-Air Temperature – °C

15

125–15

–10

–5

0

5

10

VO = 0

VID = –100 mV

TA = 25°C

VID = 100 mV

VO = 0

VID = –100 mV

VID = 100 mV

VCC± = ± 15 V

–10

–5

0

5

10

–50 –25 0 25 50 75 100

SHORT-CIRCUIT OUTPUT CURRENTvs



SUPPLY VOLTAGE

ÁÁÁÁÁÁ

OS

I IOS

– S

hort

-Circ

uit O

utpu

t Cur

rent

– m

A

ÁÁÁÁÁÁ

OS

I

Figure 19 Figure 20





TYPICAL CHARACTERISTICS †IO

S –

Sho

rt-C

ircui

t Out

put C

urre

nt –

mA

0VCC – Supply Voltage – V

15

30–15

–10

–5

0

5

10

–75

6

125–10

–50 –25 0 25 50 75 100

–8

–6

–4

–2

0

2

4TA = 25°C

VID = –100 mV

VID = 100 mV

VID = –100 mVVCC = 5 V

VID = 100 mV

VO = 0

VCC = 5 V

TA – Free-Air Temperature – °C252015105

VO = VCC

VO = 0




SUPPLY VOLTAGE

ÁÁÁÁ

OS

I IOS

– S

hort

-Circ

uit O

utpu

t Cur

rent

– m

A

ÁÁÁÁ

OS

I

Figure 21 Figure 22

–75

500

1250

0

ICC

– S

uppl

y C

urre

nt –

ua

|VCC±| – Supply Voltage – V162 4 6 8 10 12 14 –50 –25 0 25 50 75 100

VO = 0No Load

TA = 25°C

TA = 125°CTA = –55°C

VCC± = ±15 V

VCC± = ±2.5 V


No LoadVO = 0

400

300

200

100100

200

300

400

0

500

SUPPLY CURRENTvs

SUPPLY VOLTAGE

SUPPLY CURRENTvs


ÁÁÁÁ

CC

IA

µ

ICC

– S

uppl

y C

urre

nt –

ua

ÁÁÁÁ

CC

IA

µ

Figure 23 Figure 24






10

CM

RR

– C

omm

on-M

ode

Reh

ectio

n R

atio

– d

B


120

10 M0

100 1 k 10 k 100 k 1 M

20

40

60

80

100

–75S

R –

Sle

w R

ate

– V

/ us


1

1250

–50 –25 0 25 50 75 100

0.2

0.4

0.6

0.8VCC± = ±15 V

VCC = 5 V

VCC± = ±15 V

VCC = 5 V

CL = 30 pFRL = 20 kΩ

See Figure 1

ÏÏÏÏÏÏÏÏÏÏÏÏ

TA = 25°C

SLEW RATEvs


COMMON-MODE REJECTION RATIOvs

FREQUENCY

sµ

Figure 25 Figure 26

CL = 30 pFTA = 25°C

VO

– O

utpu

t Vol

tage

– m

V

t – Time – µs

100

80–100

0 20 40 60

–50

0

50

2.6

802.4

0 20 40 60

2.45

2.5

2.55

VCC = 5 V

t – Time – µs

RL = 10 kΩ

See Figure 4

RL = 10 kΩCL = 30 pFTA = 25°CSee Figure 4

VOLTAGE-FOLLOWERSMALL-SIGNAL

PULSE RESPONSE

VOLTAGE-FOLLOWERSMALL-SIGNAL

PULSE RESPONSE

ÁÁÁÁÁÁ

VO VO

– O

utpu

t Vol

tage

– V

ÁÁÁÁÁÁ

VO

VCC± = ±15 V

Figure 27 Figure 28





TYPICAL CHARACTERISTICSV

O –

Out

put V

olta

ge –

V

t – Time – µs

15

80–15

0 20 40 60

–10

–5

0

5

10

t – Time – µs

4

800

0 20 40 60

1

2

3

ÏÏÏÏÏÏÏÏÏÏÏÏ

VCC± = ±15 VRL = 10 kΩCL = 30 pFTA = 25°CSee Figure 1

VCC = 5 VRL = 10 kΩCL = 30 pFTA = 25°CSee Figure 1

VOLTAGE-FOLLOWERLARGE-SIGNAL

PULSE RESPONSE

VOLTAGE-FOLLOWERLARGE-SIGNAL

PULSE RESPONSE

ÁÁÁÁ

VO

VO

– O

utpu

t Vol

tage

– V

ÁÁÁÁ

VO

Figure 29 Figure 30

0

0.5

10– 0.5

1 2 3 4 5 6 7 8 9

– 0.4

– 0.3

– 0.2

– 0.1

0

0.1

0.2

0.3

0.4

t – Time – s t – Time – s

0.4

0.3

0.2

0.1

0

– 0.1

– 0.2

– 0.3

– 0.4

– 0.5

0.5

987654321 100

VCC± = ±15 VTA = 25°C

VCC± = ±15 V

TA = 25°C

PEAK-TO-PEAK EQUIVALENTINPUT NOISE VOLTAGE

0.1 TO 1 Hz

PEAK-TO-PEAK EQUIVALENTINPUT NOISE VOLTAGE

0.1 TO 10 Hz

VN

PP

– P

eak-

to-P

eak

Equ

ival

ent I

nput

Noi

se V

olta

ge –

uV

Vµ

ÁÁÁÁÁÁ

V N(P

P)

VN

PP

– P

eak-

to-P

eak

Equ

ival

ent I

nput

Noi

se V

olta

ge –

uV

Vµ

ÁÁÁÁÁÁ

V N(P

P)

Figure 31 Figure 32





1 k10010

3

2

1

14121086420

16

4

|VCC±| – Supply Voltage – V

B1

– U

nity

-Gai

n B

andw

idth

– M

Hz

0

160

120

80

40

010 k

200


Vn

– E

quiv

alen

t Inp

ut N

oise

Vol

tage

– n

VH

z

1

UNITY-GAIN BANDWIDTHvs

SUPPLY VOLTAGE

EQUIVALENT INPUT NOISE VOLTAGEvs

FREQUENCY

Vn

B1

ÁÁÁÁÁÁ

nV/

Hz ÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

See Figure 2TA = 25°CRS = 20 ΩVCC± = ±15 V ÁÁÁÁÁ


RL = 10 kΩCL = 30 pFTA = 25°CSee Figure 3

Figure 33 Figure 34


VCC = 5 V

3

2

1

1007550250–25–500

125

4

TA – Free-Air Temperature – °C–75

53°

51°

49°

47°

141210864245°

16

55°

m –

Pha

se M

argi

n

0

PHASE MARGINvs

SUPPLY VOLTAGE

UNITY-GAIN BANDWIDTHvs


|VCC±| – Supply Voltage – V

ÁÁÁÁ

mφ

RL = 10 kΩCL = 30 pFSee Figure 3

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

See Figure 3TA = 25°CCL = 30 pFRL = 10 kΩ

ÏÏÏÏÏÏÏÏÏÏVCC± = ±15 V

B1

– U

nity

-Gai

n B

andw

idth

– M

Hz

B1

Figure 35 Figure 36







42°

1007550250–25–5080604020

VCC = 5 V

VCC± = ±15 V

VCC = 5 V

See Figure 3TA = 25°CRL = 10 kΩ

52°

50°

48°

46°

44°

40°125

54°

TA – Free-Air Temperature – °C–75

60°

50°

40°

30°

20°

10°

0°100

70°

CL – Load Capacitance – pF

m –

Pha

se M

argi

n

0

PHASE MARGINvs


PHASE MARGINvs

LOAD CAPACITANCE

ÁÁÁÁ

mφ m

– P

hase

Mar

gin

ÁÁÁÁ

mφ

VCC± = ±15 V


See Figure 3CL = 30 pFRL = 10 kΩ

Figure 37 Figure 38


APPLICATION INFORMATION

voltage-follower applications

The TLE2022 circuitry includes input-protection diodes to limit the voltage across the input transistors; however,no provision is made in the circuit to limit the current if these diodes are forward biased. This condition can occurwhen the device is operated in the voltage-follower configuration and driven with a fast, large-signal pulse. Itis recommended that a feedback resistor be used to limit the current to a maximum of 1 mA to preventdegradation of the device. Also, this feedback resistor forms a pole with the input capacitance of the device. Forfeedback resistor values greater than 10 kΩ, this pole degrades the amplifier’s phase margin. This problem canbe alleviated by adding a capacitor (20 pF to 50 pF) in parallel with the feedback resistor (see Figure 39).

Figure 39. Voltage Follower

+

–

VI

VO

VCC–

VCC +RF

IF ≤ 1 mA

CF = 20 to 50 pF

Input characteristicsThe input of any unused amplifiers should be tied to ground to avoid possible oscillation.




IMPORTANT NOTICE

Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductorproduct or service without notice, and advises its customers to obtain the latest version of relevant informationto verify, before placing orders, that the information being relied on is current.

TI warrants performance of its semiconductor products and related software to the specifications applicable atthe time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques areutilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of eachdevice is not necessarily performed, except those mandated by government requirements.

Certain applications using semiconductor products may involve potential risks of death, personal injury, orsevere property or environmental damage (“Critical Applications”).

TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTEDTO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHERCRITICAL APPLICATIONS.

Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TIproducts in such applications requires the written approval of an appropriate TI officer. Questions concerningpotential risk applications should be directed to TI through a local SC sales office.

In order to minimize risks associated with the customer’s applications, adequate design and operatingsafeguards should be provided by the customer to minimize inherent or procedural hazards.

TI assumes no liability for applications assistance, customer product design, software performance, orinfringement of patents or services described herein. Nor does TI warrant or represent that any license, eitherexpress or implied, is granted under any patent right, copyright, mask work right, or other intellectual propertyright of TI covering or relating to any combination, machine, or process in which such semiconductor productsor services might be or are used.

Copyright 1995, Texas Instruments Incorporated

Documents

TLE2022, TLE2022A, TLE2022B, TLE2022Y …docs-asia.electrocomponents.com/webdocs/0026/0900766b80026a22.pdfTLE2022, TLE2022A, TLE2022B, TLE2022Y EXCALIBUR HIGH-SPEED LOW-POWER PRECISION