Thyristors Topics Covered in Chapter 32 32-1: Diacs 32-2: SCRs and Their Characteristics 32-3: Triacs 32-4: Unijunction Transistors Chapter 32 © 2007 The

ThyristorsThyristors

Topics Covered in Chapter 32

32-1: Diacs

32-2: SCRs and Their Characteristics

32-3: Triacs

32-4: Unijunction Transistors

ChapterChapter3232

© 2007 The McGraw-Hill Companies, Inc. All rights reserved.

32-1: Diacs32-1: Diacs

A diac is a three-layer, two-junction semiconductor device that has only two leads.

A diac is also referred to as a bi-directional diode thyristor because it can conduct current in either direction.

Diacs are often used in conjunction with triacs to provide symmetrical triggering.

McGraw-Hill © 2007 The McGraw-Hill Companies, Inc. All rights reserved.

32-1: Diacs32-1: Diacs

Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display.Fig. 32-1

Fig. 32-1 (a) shows the basic construction of a diac, and Fig. 32-1 (b) shows the schematic symbol.

32-2: SCRs and Their 32-2: SCRs and Their CharacteristicsCharacteristics

The silicon controlled rectifier (SCR) is a four-layer pnpn device with three leads, the anode, gate, and cathode.

An SCR will not conduct until the forward breakover voltage is reached, even though its anode-cathode is forward-biased.

The gate current in an SCR controls the forward breakover voltage.

Once an SCR turns on, the gate loses all control. The only way to turn an SCR off is to reduce the

anode current below the holding current, IH.


Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display.Fig. 32-3

A silicon controlled rectifier (SCR) is a four-layer pnpn device. Fig. 32-3 (a) shows the basic construction of an SCR, and Fig. 32-3 (b) shows the schematic symbol. The SCR has three external leads: the anode, cathode, and gate.


Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display.

Fig. 32-5 (a)

SCRs are frequently used to control the amount of power that is delivered to a load. Fig. 32-5 (a) shows a circuit where an SCR is used to control the amount of load current supplied to a lamp.


Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display.Fig. 32-5 (b)

Fig. 32-5 (b) shows the load and SCR voltage waveforms for R2 (in Fig. 32-5 a) set so that the SCR fires when the input signal reaches its peak value at 90°.



Fig. 32-5 (c)

Fig. 32-5 (c) shows the load and SCR voltage waveforms for R2 (in Fig. 32-5 a) set so that the SCR fires when the input signal reaches 45°.



Fig. 32-5 (d)

Fig. 32-5 (d) shows the load and SCR voltage waveforms for R2 (in Fig. 32-5 a) set at its maximum value so that the SCR fires when the input signal is near 0°.

32-3: Triacs32-3: Triacs

A triac is a bi-directional thyristor used to control the power in ac circuits.

A triac has two leads designated MT1, and MT2 or A1 and A2.

A triac has a gate lead which is used to control its conduction.

A triac is equivalent to two SCRs in parallel.



Fig. 32-7

The schematic symbol for a triac is shown in Fig. 32-7 (a). There are two anode terminals, A2 and A1, and a gate lead. The triac is the equivalent of two SCRs connected in parallel, as shown in Fig. 32-7 (b).


Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Fig. 32-8

A2 Gate Mode

+ + 1

+ − 2

− + 3

− − 4

Fig. 32-8 shows the four operating modes for a triac. When the anode 2 (A2) terminal is positive, the triac can be turned on with either a positive or negative gate voltage. When the anode 2 (A2) terminal is negative, the triac can be turned on with either a positive or negative gate voltage.



Fig. 32-9

Fig. 32-9 shows a very effective way to provide a wide range of control over load current. R1-C1 and R2-C2 provide the required phase shift necessary for full control of the load current.

32-4: Unijunction Transistors32-4: Unijunction Transistors

The unijunction transistor (UJT) is a three-terminal semiconductor device that has only one p-n junction.

The unijunction transistor (UJT) has two base leads, B1 and B2 and an emitter (E) lead.

The interbase resistance, RBB of a UJT is the resistance of its n-type silicon bar.

The ratio RB1/(RB1 + RB2) is called the intrinsic standoff ratio, designated η.

UJTs are used in conjunction with SCRs and Triacs to control their conduction angle.



Fig. 32-10 (a)

Construction of a UJT is shown in Fig. 32-10 (a). A bar of n-type silicon (Si) is placed on two separate pieces of ceramic. Each piece of ceramic is bonded by a gold film to each end of the n-type Si bar, which forms a very low resistance contact. each end of the Si bar is called a base.



Fig. 32-12

Negative resistance is illustrated in the emitter characteristic curve shown in Fig. 32-12.

Once VP is reached, the emitter voltage, VE, decreases as IE increases.



Fig. 32-13

Fig. 32-13 shows how a UJT can be used as a relaxation oscillator. Because the voltage waveform, VB1 is a sharp pulse of short duration, it is the ideal gate triggering source for either an SCR or triac.


Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Fig. 32-14

Fig. 32-14 shows how the firing of an SCR can be controlled by a UJT.

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Thyristors Topics Covered in Chapter 32 32-1: Diacs 32-2: SCRs and Their Characteristics 32-3: Triacs 32-4: Unijunction Transistors Chapter 32 © 2007 The