Thermoelectric Materials 2000— The Next Generation

Thermoelectric Materials 2000—The Next Generation Materials for

Small-Scale Refrigeration andPower Generation Applications

www.cambridge.org© in this web service Cambridge University Press

Cambridge University Press978-1-107-41301-6 - Thermoelectric Materials 2000—The Next Generation Materials forSmall-Scale Refrigeration and Power Generation Applications: Materials Research SocietySymposium Proceedings: Volume 626Editors: Terry M. Tritt, George S. Nolas, Gerald D. Mahan, David Mandrusand Mercouri G. Kanatzidis FrontmatterMore information

http://www.cambridge.org/9781107413016

http://www.cambridge.org







MATERIALS RESEARCH SOCIETYSYMPOSIUM PROCEEDINGS VOLUME 626

Thermoelectric Materials 2000—The Next Generation Materials for

Small-Scale Refrigeration andPower Generation Applications

Symposium held April 24-27,2000, San Francisco, California, U.S.A.

EDITORS:

Terry M. TrittClemson University

Clemson, South Carolina, U.S.A.

George S. NolasMarlow Industries

Dallas, Texas, U.S.A.

Gerald D. MahanUniversity of Tennessee

Knoxville, Tennessee, U.S.A.

David MandrusOak Ridge National LaboratoryOak Ridge, Tennessee, U.S.A.

Mercouri G. KanatzidisMichigan State University

East Lansing, Michigan, U.S.A.

Materials Research SocietyWarrendale, Pennsylvania






cambridge university press Cambridge, New York, Melbourne, Madrid, Cape Town, Singapore, São Paulo, Delhi, Mexico City

Cambridge University Press32 Avenue of the Americas, New York ny 10013-2473, USA

Published in the United States of America by Cambridge University Press, New York

www.cambridge.orgInformation on this title: www.cambridge.org/9781107413016

Materials Research Society506 Keystone Drive, Warrendale, pa 15086http://www.mrs.org

© Materials Research Society 2001

This publication is in copyright. Subject to statutory exceptionand to the provisions of relevant collective licensing agreements, no reproduction of any part may take place without the written permission of Cambridge University Press.

This publication has been registered with Copyright Clearance Center, Inc.For further information please contact the Copyright Clearance Center,Salem, Massachusetts.

First published 2001 First paperback edition 2013

Single article reprints from this publication are available throughUniversity Microfilms Inc., 300 North Zeeb Road, Ann Arbor, mi 48106

CODEN: MRSPDH

isbn 978-1-107-41301-6 Paperback

Cambridge University Press has no responsibility for the persistence oraccuracy of URLs for external or third-party internet websites referred to inthis publication, and does not guarantee that any content on such websites is,or will remain, accurate or appropriate.






CONTENTS

Preface xiii

Materials Research Symposium Proceedings xv

SKUTTERUDITES

*The Synthesis of Metastable Skutterudites andCrystalline Superlattices Zl.l

Heike Sellinschegg, Joshua R. Williams, Gene Yoon,David C. Johnson, Michael Kaeser, Terry M. Tritt,George S. Nolas, and E. Nelson

How Cerium Filling Fraction Influences Thermal Factors andMagnetism in CeyFe4.xNixSbi2 Z1.2

L. Chapon, D. Ravot, J.C. Tedenac, and F. Bouree-Vigneron

Thermoelectric Properties of Some Cobalt Phosphide-ArsenideCompounds Z1.4

Anucha Watcharapasorn, Robert C. DeMattei, Robert S. Feigelson,Thierry Caillat, Alexander Borshchevsky, G. Jeffrey Snyder,and Jean-Pierre Fleurial

SUPERLATTICE

*Epitaxial Growth and Thermoelectric Properties of Bi2Te3

Based Low Dimensional Structures Z2.1Joachim Nurnus, Harald Beyer, Armin Lambrecht,and Harald Bottner

Synthesis and Physical Properties of Skutterudite Superlattices Z2.3Joshua R. Williams, David C. Johnson, Michael Kaeser,Terry M. Tritt, George S. Nolas, and E. Nelson

Artificially Atomic-Scale Ordered Superlattice Alloys ForThermoelectric Applications Z2.4

Sunglae Cho, Yunki Kim, Antonio DiVenere, George K.L. Wong,Arthur J. Freeman, John B. Ketterson, Linda J. Olafsen, Igor Vurgaftman,Jerry R. Meyer, Craig A. Hoffman, and Gang Chen

Invited Paper






Thermoelectric Properties of PbSr(Se,Te)-Based LowDimensional Structures Z2.5

Harald Beyer, Joachim Nurnus, Harald Bottner,Armin Lambrecht, Lothar Schmitt, and Friedemann Volklein

NEW MATERIALS I

Thermoelectric Figure of Merit, ZT, of Single CrystalPentatellurides (MTe5_x Sex : M = Hf, Zr and x = 0, 0.25) Z3.1

Roy T. Littleton IV, Terry M. Tritt, Bartosz Zawilski,Joseph W. Kolis, Douglas R. Ketchum, and M. Brooks Derrick

*Thermoelectric Properties of Selenide Spinels Z3.3G. Jeffrey Snyder, Thierry Caillat, and J-P. Fleurial

Thermoelectric Properties of Tl9BiTe6/Tl9BiSe6 Solid Solutions Z3.4Bernd Wolfing, Christian Kloc, and Ernst Bucher

Investigations of Solid Solutions of CsBi4Te6 Z3.5Duck-Young Chung, Timothy P. Hogan, Nishant Ghelani,Paul W. Brazis, Melissa A. Lane, Carl R. Kannewurf,and Mercouri G. Kanatzidis

QUANTUM WIRES AND DOTS

*Carrier Pocket Engineering for the Design of Low DimensionalThermoelectrics With High Z3DT Z4.3

Takaaki Koga, Stephen B. Cronin, and Mildred S. Dresselhaus

HALF-HEUSLER ALLOYS ANDQUASICRYSTALS

Effects of the Addition of Rhenium on the ThermoelectricProperties of the AlPdMn Quasicrystalline System Z5.1

Amy L. Pope, Robert Gagnon, Robert Schneidmiller,Paola N. Alboni, Roy T. Littleton IV, Bartosz Zawilski,Donny Winkler, Terry M. Tritt, John Strom-Olsen,Joseph Kolis, and Stephan Legault

Invited Paper






Effect of Substitutional Doping on the Thermal Conductivityof Ti-BasedHalf-Heusler Compounds Z5.2

Sriparna Bhattacharya, Vijayabharathi Ponnambalam, Amy L. Pope,Y. Xia, S. Joseph Poon, Roy T. Littleton IV, and Terry M. Tritt

High Temperature Thermal Conductivity Measurements ofQuasicrystalline Al7o.8Pd2o.9Mn8.3 Z5.4

Philip S. Davis, Peter A. Barnes, Cronin B. Vining, Amy L. Pope,Robert Schneidmiller, Terry M. Tritt, and Joseph Kolis

TE THEORY

Theoretical Evaluation of the Thermal Conductivity inFramework (Clathrate) Semiconductors Z6.1

Jianjun Dong, Otto F. Sankey, Charles W. Myles,Ganesh K. Ramachandran, Paul F. McMillan, and Jan Gryko

Electronic Structure of CsBi4Te6 Z6.2Paul Larson, Subhendra D. Mahanti, Duck-Young Chung,and Mercouri G. Kanatzidis

*Where Should We Look for High ZT Materials: SuggestionsFrom Theory Z6.3

Marco Fornari, David J. Singh, Igor I. Mazin,and Joseph L. Feldman

Enhancement of Power Factor in a Thermoelectric CompositeWith a Periodic Microstructure Z6.5

Leonid G. Fel, Yakov M. Strelniker, and David J. Bergman

NEW MA TERIALSII

Connections Between Crystallographic Data and NewThermoelectric Compounds Z7.1

Brian C. Sales, Bryan C. Chakoumakos, and David Mandrus

Investigation of the Thermal Conductivity of thePentatellurides (Hf!.xZrxTe5) Using the Parallel ThermalConductance Technique Z7.3

Bartosz M. Zawilski, Roy T. Littleton IV, Terry M. Tritt,Douglas R. Ketchum, and Joseph W. Kolis

Invited Paper

vii






Compositional and Structural Modifications in TernaryBismuth Chalcogenides and Their Thermoelectric Properties Z7.4

Duck-Young Chung, Melissa A. Lane, John R. Ireland,Paul W. Brazis, Carl R. Kannewurf, and Mercouri G. Kanatzidis

Doping Studies of n-Type CsBLJ^ Thermoelectric Materials Z7.5Melissa A. Lane, John R. Ireland, Paul W. Brazis, Theodora Kyratsi,Duck-Young Chung, Mercouri G. Kanatzidis, and Carl R. Kannewurf

Exploring Complex Chalcogenides for ThermoelectricApplications Z7.6

Ying C. Wang and Francis J. DiSalvo

POSTER SESSION

Semiconductors With Tetrahedral Anions as PotentialThermoelectric Materials Z8.2

Thomas P. Braun, Christopher B. Hoffman, and Francis J. DiSalvo

Lattice Dynamics Study of Anisotropic Heat Conduction inSuperlattices Z8.3

B. Yang and G. Chen

Structure and Thermoelectric Properties of New Quaternary Tinand Lead Bismuth Selenides, K1+xM4_2XBi7+xSei5 (M = Sn, Pb)and K^Sn^Biii+iSezz Z8.4

Antje Mrotzek, Kyoung-Shin Choi, Duck-Young Chung,Melissa A. Lane, John R. Ireland, Paul W. Brazis, Timothy P. Hogan,Carl R. Kannewurf, and Mercouri G. Kanatzidis

Processing, Characterization, and Measurement of the SeebeckCoefficient of Bismuth Microwire Array Composites Z8.5

T.E. Huber and P. Constant

Characterization of New Materials in a Four-SampleThermoelectric Measurement System Z8.6

Nishant A. Ghelani, Sim Y. Loo, Duck-Young Chung,Sandrine Sportouch, Stephan de Nardi, Mercouri G. Kanatzidis,Timothy P. Hogan, and George S. Nolas

Vll l






Crystal Growth of Ternary and Quaternary Alkali MetalBismuth Chalcogenides Using Bridgman Technique Z8.8

Theodora Kyratsi, Duck-Young Chung, Kyoung-Shin Choi,Jeffrey S. Dyck, Wei Chen, Ctirad Uher, and Mercouri G. Kanatzidis

Thermoelectric Properties of Doped Iron Disilicide Z8.10Jun-ichi Tani and Hiroyasu Kido

Transport Properties of the Doped Thermoelectric MaterialK2Bi8.xSbxSe13 Z8.ll

Paul W. Brazis, John R. Ireland, Melissa A. Lane, Theodora Kyratsi,Duck-Young Chung, Mercouri G. Kanatzidis, and Carl R. Kannewurf

Structural Properties of Strain SymmetrizedSilicon/Germanium (111) Superlattices Z8.13

Christoph A. Kleint, Armin Heinrich, Thomas Muehl,Joachim Schumann, and Michael Hecker

Electric and Thermoelectric Properties of Quantum WiresBased on Bismuth Semimetal and Its Alloys Z8.16

Albina A. Nikolaeva, Pavel P. Bodiul, Dmitrii V. Gitsu,and Gheorgii Para

High-Z Lanthanum-Cerium Hexaborate Thin Films forLow-Temperature Applications Z8.21

Armen Kuzanyan, George Badalyan, Sergey Harutyunyan,Ashot Gyulamiryan, Violetta Vartanyan, Silvia Petrosyan,Nicholas Giordano, Todd Jacobs, Kent Wood, Gilbert Fritz,Syed B. Qadri, James Horwitz, Huey-Dau Wu,Deborah Van Vechten, and Armen Gulian

THERMIONICS

Thermal Conductivity of Bi/Sb Superlattice Z9.1David W. Song, G. Chen, Sunglae Cho, Yunki Kim,and John B. Kerterson

Upper Limitation to the Performance of Single-BarrierThermionic Emission Cooling Z9.4

Marc D. Ulrich, Peter A. Barnes, and Cronin B. Vining

Umklapp Scattering and Heat Conductivity of Superlattices Z9.5Mikhail V. Simkin and Gerald D. Mahan






SKUTTERUDITESII

Partially-Filled Skutterudites: Optimizing the ThermoelectricProperties Z10.1

George S. Nolas, Michael Kaeser, Roy T. Littleton IV,Terry M. Tritt, Heike Sellinschegg, David C. Johnson,and Elizabeth Nelson

Bulk Synthesis of Completely and Partially Sn Filled CoSb3

Using the Multilayer Repeat Method Z10.2Heike Sellinschegg, David C. Johnson, Michael Kaeser,Terry M. Tritt, George S. Nolas, and Elizabeth Nelson

*The Influence of Ni on the Transport Properties of CoSb3 Z10.3Ctirad Uher, Jeffrey S. Dyck, Wei Chen, Gregory P. Meisner,and Jihui Yang

Structural Defects in a Partially-Filled Skutterudite Z10.4Jennifer S. Harper and Ronald Gronsky

DEVICES, MEASUREMENTS, ANDAPPLICATIONS

Optimization of Bismuth Nanowire Arrays by ElectrochemicalDeposition Zl l . l

John H. Barkyoumb, Jack L. Price, Noel A. Guardala,Norris Lindsey, David L. Demske, Jagadish Sharma,Hyoung Ho Kang, and Lourdes Salamanca-Riba

Evaluation of a Thermoelectric Device Utilizing Porous Medium Z11.2Hideyuki Yasuda, Itsuo Ohnaka, Yoichi Inada,and Kimitaka Nomura

Electrochemical Deposition of (Bi,Sb)2Te3 for ThermoelectricMicrodevices Z11.3

Jean-Pierre Fleurial, Jennifer A. Herman, G. Jeffrey Snyder,Margaret A. Ryan, Alexander Borshchevsky, and Chen-Kuo Huang

Transient Thermoelectric Cooling of Thin Film Devices Z11.4A. Ravi Kumar, Rong Gui Yang, Gang Chen,and Jean-Pierre Fleurial

Invited Paper






P-Type (SiGe) Si Superlattice Cooler Z11.5Xiaofeng Fan, Gehong Zeng, Edward Croke, Gerry Robinson,Christopher J. LaBounty, Charming C. Ahn, Ali Shakouri,and John E. Bowers

Progress in the Development of Segmented ThermoelectricUnicouples at the Jet Propulsion Laboratory Z11.6

Thierry Caillat, Jean-Pierre Fleurial, G. Jeffrey Snyder,and Alexander Borshchevsky

CLATH RATES

Thermal Conductivity of Type-I and -II Clathrate Compounds Z13.1George S. Nolas, Joshua L. Cohn, Michael Kaeser, and Terry M. Tritt

Framework Stoichiometry and Electrical Conductivity of Si-GeBased Structure-I Clathrates Z13.2

Ganesh K. Ramachandran, Paul F. McMillan, Jianjun Dong,Jan Gryko, and Otto F. Sankey

Ultrasound Studies of Clathrate Thermoelectrics Z13.3Veerle M. Keppens, Brian C. Sales, David Mandrus,Bryan C. Chakoumakos, and Christiane Laermans

Synthesis and Characterization of Large Single Crystals ofSilicon and Germanium Clathrate-II Compounds and a NewTin Compound With Clathrate Layers Z13.5

Svilen Bobev and Slavi C. Sevov

THIN FILMS TE

Electrodeposition of Bi2Te3 Nanowire Composites Z14.1Amy L. Prieto, Melissa S. Sander, Angelica M. Stacy,Ronald Gronsky, and Timothy Sands

Thermopower of Bi Nanowire Array Composites Z14.2Tito E. Huber, Michael J. Graf, Colby A. Foss, Jr.,and Pierre Constant

Invited Paperxi






Experimental Investigation of Thin Film InGaAsP Coolers Z14.4Christopher J. LaBounty, Ali Shakouri, Gerry Robinson,Luis Esparza, Patrick Abraham, and John E. Bowers

Author Index

Subject Index






PREFACE

Symposium Z, "Thermoelectric Materials 2000—The Next Generation Materials forSmall-Scale Refrigeration and Power Generation Applications," held April 24-27 at the 2000MRS Spring Meeting in San Francisco, California, was the fourth in a series of MRS symposiawhich are specifically related to research in new thermoelectric materials [see MRS SymposiumProceedings Vol. 234 (1991), Vol. 478 (1997) and Vol. 545 (1999).] At this Meeting therewere over 60 contributed oral presentations, 11 invited talks and 22 poster presentations.Some of the highlights of this Meeting were results presented by Ted Harmon of MIT LincolnLabs on quantum dot nanostructures of PbTe materials. These materials appear to exhibit asubstantial improvement over their bulk counterparts with a ZT ~ 2. The Kanatzidis group atMichigan State University presented an update on the CsBi4Te6 material since theirannouncement in Science Vol. 287, pp. 1024-7 (2000). In addition, George Nolas of MarlowIndustries and Brian Sales of Oak Ridge National Laboratory presented results on a Yb partiallyfilled skutterudite with ZT > 1 at 300 °C. There were also many interesting results in theclathrates, skutterudites, quasicrystals and novel chalcogenide materials systems as well as inIII-V compounds for thermionic refrigeration. As in past symposia, both bulk and thin filmthermoelectric materials research was well represented. Thermoelectric materials are used in awide variety of applications related to small-scale solid state refrigeration or power generation.

Over the past thirty years, alloys based on the Bi2Te3 compounds (refrigeration) andSii_xGex compounds (power generation) have been extensively studied and optimized for theiruse as thermoelectric materials. Thermoelectric cooling is an environmentally "friendly"method of small-scale cooling in specific applications such as cooling computer chips, smallbeverage coolers, cooling laser diodes and infrared detectors. Another very importantapplication of thermoelectric materials is in power generation for deep space probes such as inthe Voyager and Cassini missions. Despite the extensive investigation of these traditionalthermoelectric materials, there is still substantial room for improvement, and thus, entirelynew classes of compounds will have to be investigated. Therefore, the focus of this symposiumcenters around the development of the next generation materials for small-scale refrigerationand power generation applications.

The essence of a good thermoelectric is given by the determination of the material'sdimensionless figure of merit, ZT =(a2o / X)T, where a is the Seebeck coefficient, a is theelectrical conductivity, and X is the total thermal conductivity. The thermal conductivityconsists of two parts, the electronic and the lattice thermal conductivity. Many of the paperspresented in this proceedings revolve around either maximizing the numerator of ZT called thepower factor, PF = a 2 cT, or by minimizing the lattice thermal conductivity. As previouslydescribed by Glen Slack, a promising thermoelectric material should possess the thermalproperties of a glass and the electronic properties of a crystal, i.e. a phonon-glass and electron-crystal (PGEC). This theme is quite prevalent in the many papers presented in this volume.The best thermoelectric materials have a value of ZT ~ 1, which has been an upper limit formore than 30 years, yet no theoretical or thermodynamic reason exists for why it cannot belarger. We believe that the future advances in thermoelectric applications will come throughresearch in new materials, and that is why we have focused the symposium on research in newmaterials, instead of further optimization of established materials. There are currently manynew methods of materials synthesis and much more rapid characterization of thermoelectricmaterials than were available 20 to 30 years ago. Many new researchers and new ideas areappearing in this field, which gives us much anticipation about future advances. It is the hopeof the organizers of this symposium that these proceedings will provide a benchmark for thecurrent state in the field of new thermoelectric materials at this time.

At the end of the symposium, there was a special session where program managers WendyFuller-Mora (NSF), Valarie Browning (DARPA), Jack Rowe (ARO), and Jerry Smith (DOE)discussed potential opportunities for thermoelectric research. This was followed by a short






question and answer period. One distinction at this symposium was the large number ofgraduate student presentations, numbering over twenty. The symposium organizers were ableto give three graduate student presentation awards and a poster award. The student awards forbest papers and presentations were: Ganesh Ramachandran, Arizona State University (who alsowon one of the general MRS best paper awards), Marc Ulrich, Auburn University, and MelissaLane, Northwestern University. The best student poster award went to Nishant Ghelani ofMichigan State University. These awards were enabled by the support of High-Z Corporation,Marlow Industries, MMR Technologies and MRS. The organizers appreciate and acknowledgethe support of these sponsors. Much of the research and the results which are presented in thisvolume were supported by DARPA, the Office of Naval Research and the Army ResearchOffice. Their financial support is greatly appreciated and acknowledged. We also acknowledgethe assistance of Marian Littleton and Lori McGowan of Clemson University in all phases ofassistance concerning the symposium organization and subsequent proceedings. Their diligenceand hard work both before and after the symposium allowed for the timely progress of themanuscripts and proceedings in preparation for publication of this volume.

Terry M. TrittGeorge S. NolasGerald D. MahanDavid MandrusMercouri G. Kanatzidis

September 2000






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 578— Multiscale Phenomena in Materials—Experiments and Modeling, I.M. Robertson, D.H. Lassila,R. Phillips, B. Devincre, 2000, ISBN: 1-55899-486-6

Volume 579— The Optical Properties of Materials, J.R. Chelikowsky, S.G. Louie, G. Martinez, E.L. Shirley,2000, ISBN: 1-55899-487-4

Volume 580— Nucleation and Growth Processes in Materials, A. Gonis, P.E.A. Turchi, A.J. Ardell, 2000,ISBN: 1-55899-488-2

Volume 581— Nanophase and Nanocomposite Materials III, S. Komarneni, J.C. Parker, H. Hahn, 2000,ISBN: 1-55899-489-0

Volume 582— Molecular Electronics, S.T. Pantelides, M.A. Reed, J. Murday, A. Aviram, 2000,ISBN: 1-55899-490-4

Volume 583— Self-Organized Processes in Semiconductor Alloys, A. Mascarenhas, D. Follstaedt, T. Suzuki,B. Joyce, 2000, ISBN: 1-55899-491-2

Volume 584— Materials Issues and Modeling for Device Nanofabrication, L. Merhari, L.T. Wille,K.E. Gonsalves, M.F. Gyure, S. Matsui, L.J. Whitman, 2000, ISBN: 1-55899-492-0

Volume 585— Fundamental Mechanisms of Low-Energy-Beam-Modified Surface Growth and Processing,S. Moss, E.H. Chason, B.H. Cooper, T. Diaz de la Rubia, J.M.E. Harper, R. Murti, 2000,ISBN: 1-55899-493-9

Volume 586— Interfacial Engineering for Optimized Properties II, C.B. Carter, E.L. Hall, S.R. Nutt, C.L. Briant,2000, ISBN: 1-55899-494-7

Volume 587— Substrate Engineering—Paving the Way to Epitaxy, D. Norton, D. Schlom, N. Newman,D. Matthiesen, 2000, ISBN: 1-55899-495-5

Volume 588— Optical Microstructural Characterization of Semiconductors, M.S. Unlu, J. Piqueras,N.M. Kalkhoran, T. Sekiguchi, 2000, ISBN: 1-55899-496-3

Volume 589— Advances in Materials Problem Solving with the Electron Microscope, J. Bentley, U. Dahmen,C. Allen, I. Petrov, 2000, ISBN: 1-55899-497-1

Volume 590— Applications of Synchrotron Radiation Techniques to Materials Science V, S.R. Stock, S.M. Mini,D.L. Perry, 2000, ISBN: 1-55899-498-X

Volume 591— Nondestructive Methods for Materials Characterization, G.Y. Baaklini, N. Meyendorf, T.E. Matikas,R.S. Gilmore, 2000, ISBN: 1-55899-499-8

Volume 592— Structure and Electronic Properties of Ultrathin Dielectric Films on Silicon and Related Structures,D.A. Buchanan, A.H. Edwards, H.J. von Bardeleben, T. Hattori, 2000, ISBN: 1-55899-500-5

Volume 593— Amorphous and Nanostructured Carbon, J.P. Sullivan, J. Robertson, O. Zhou, T.B. Allen,B.F. Coll, 2000, ISBN: 1-55899-501-3

Volume 594— Thin Films—Stresses and Mechanical Properties VIII, R. Vinci, O. Kraft, N. Moody, P. Besser,E. Shaffer II, 2000, ISBN: 1-55899-502-1

Volume 595— GaN and Related Alloys—1999, T.H. Myers, R.M. Feenstra, M.S. Shur, H. Amano, 2000,ISBN: 1-55899-503-X

Volume 596— Ferroelectric Thin Films VIII, R.W. Schwartz, P.C. Mclntyre, Y. Miyasaka, S.R. Summerfelt,D. Wouters, 2000, ISBN: 1-55899-504-8

Volume 597— Thin Films for Optical Waveguide Devices and Materials for Optical Limiting, K. Nashimoto,R. Pachter, B.W. Wessels, J. Shmulovich, A.K-Y. Jen, K. Lewis, R. Sutherland, J.W. Perry,2000, ISBN: 1-55899-505-6

Volume 598— Electrical, Optical, and Magnetic Properties of Organic Solid-State Materials V, S. Ermer,J.R. Reynolds, J.W. Perry, A.K-Y. Jen, Z. Bao, 2000, ISBN: 1-55899-506-4

Volume 599— Mineralization in Natural and Synthetic Biomaterials, P. Li, P. Calvert, T. Kokubo, R.J. Levy,C. Scheid, 2000, ISBN: 1-55899-507-2

Volume 600— Electroactive Polymers (EAP), Q.M. Zhang, T. Furukawa, Y. Bar-Cohen, J. Scheinbeim, 2000,ISBN: 1-55899-508-0

Volume 601— Superplasticity—Current Status and Future Potential, P.B. Berbon, M.Z. Berbon, T. Sakuma,T.G. Langdon, 2000, ISBN: 1-55899-509-9

Volume 602— Magnetoresistive Oxides and Related Materials, M. Rzchowski, M. Kawasaki, A.J. Millis,M. Rajeswari, S. von Molnar, 2000, ISBN: 1-55899-510-2

Volume 603— Materials Issues for Tunable RF and Microwave Devices, Q. Jia, F.A. Miranda, D.E. Oates, X. Xi,2000, ISBN: 1-55899-511-0

Volume 604— Materials for Smart Systems III, M. Wun-Fogle, K. Uchino, Y. Ito, R. Gotthardt, 2000,ISBN: 1-55899-512-9






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 605— Materials Science of Microelectromechanical Systems (MEMS) Devices II, M.P. deBoer,A.H. Heuer, S.J. Jacobs, E. Peeters, 2000, ISBN: 1-55899-513-7

Volume 606— Chemical Processing of Dielectrics, Insulators and Electronic Ceramics, A.C. Jones, J. Veteran,D. Mullin, R. Cooper, S. Kaushal, 2000, ISBN: 1-55899-514-5

Volume 607— Infrared Applications of Semiconductors III, M.O. Manasreh, BJ.H. Stadler, I. Ferguson,Y-H. Zhang, 2000, ISBN: 1-55899-515-3

Volume 608— Scientific Basis for Nuclear Waste Management XXIII, R.W. Smith, D.W. Shoesmith, 2000,ISBN: 1-55899-516-1

Volume 609— Amorphous and Heterogeneous Silicon Thin Films—2000, R.W. Collins, H.M. Branz, S. Guha,H. Okamoto, M. Stutzmann, 2000, ISBN: 1-55899-517-X

Volume 610— Si Front-End Processing—Physics and Technology of Dopant-Defect Interactions II, A. Agarwal,L. Pelaz, H-H. Vuong, P. Packan, M. Kase, 2000, ISBN: 1-55899-518-8

Volume 611— Gate Stack and Silicide Issues in Silicon Processing, L. Clevenger, S.A. Campbell, B. Herner,J. Kittl, P.R. Besser, 2000, ISBN: 1-55899-519-6

Volume 612— Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics, K. Maex,Y-C. Joo, G.S. Oehrlein, S. Ogawa, J.T. Wetzel, 2000, ISBN: 1-55899-520-X

Volume 613— Chemical-Mechanical Polishing 2000—Fundamentals and Materials Issues, R.K. Singh, R. Bajaj,M. Meuris, M. Moinpour, 2000, ISBN: 1-55899-521-8

Volume 614— Magnetic Materials, Structures and Processing for Information Storage, B.J. Daniels, M.A. Seigler,T.P. Nolan, S.X. Wang, C.B. Murray, 2000, ISBN: 1-55899-522-6

Volume 615— Poly crystalline Metal and Magnetic Thin Films—2000, L. Gignac, O. Thomas, J. MacLaren,B. Clemens, 2000, ISBN: 1-55899-523-4

Volume 616— New Methods, Mechanisms and Models of Vapor Deposition, H.N.G. Wadley, G.H. Gilmer,W.G. Barker, 2000, ISBN: 1-55899-524-2

Volume 617— Laser-Solid Interactions for Materials Processing, D. Kumar, D.P. Norton, C.B. Lee, K. Ebihara,X. Xi, 2000, ISBN: 1-55899-525-0

Volume 618— Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films,J.M. Millunchick, A-L. Barabasi, E.D. Jones, N. Modine, 2000, ISBN: 1-55899-526-9

Volume 619— Recent Developments in Oxide and Metal Epitaxy—Theory and Experiment, M. Yeadon,S. Chiang, R.F.C. Farrow, J.W. Evans, O. Auciello, 2000, ISBN: 1-55899-527-7

Volume 620— Morphology and Dynamics of Crystal Surfaces in Complex Molecular Systems, J. DeYoreo,W. Casey, A. Malkin, E. Vlieg, M. Ward, 2000, ISBN: 1-55899-528-5

Volume 621— Electron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays, K.L. Jensen,W. Mackie, D. Temple, J. Itoh, R. Nemanich, T. Trottier, P. Holloway, 2000,ISBN: 1-55899-529-3

Volume 622— Wide-Bandgap Electronic Devices, R.J. Shul, F. Ren, M. Murakami, W. Pletschen, 2000,ISBN: 1-55899-530-7

Volume 623— Materials Science of Novel Oxide-Based Electronics, D.S. Ginley, D.M. Newns, H. Kawazoe,A.B. Kozyrev, J.D. Perkins, 2000, ISBN: 1-55899-531-5

Volume 624— Materials Development for Direct Write Technologies, D.B. Chrisey, D.R. Gamota, H. Helvajian,D.P. Taylor, 2000, ISBN: 1-55899-532-3

Volume 625— Solid Freeform and Additive Fabrication—2000, S.C. Danforth, D. Dimos, F.B. Prinz, 2000,ISBN: 1-55899-533-1

Volume 626— Thermoelectric Materials 2000—The Next Generation Materials for Small-Scale Refrigeration andPower Generation Applications, T.M. Tritt, G.S. Nolas, G. Mahan, M.G. Kanatzidis, D. Mandrus,2000, ISBN: 1-55899-534-X

Volume 627— The Granular State, S. Sen, M. Hunt, 2000, ISBN: 1-55899-535-8Volume 628— Organic/Inorganic Hybrid Materials—2000, R.M. Laine, C. Sanchez, E. Giannelis, C.J. Brinker,

2000, ISBN: 1-55899-536-6Volume 629— Interfaces, Adhesion and Processing in Polymer Systems, S.H. Anastasiadis, A. Karim,

G.S. Ferguson, 2000, ISBN: 1-55899-537-4Volume 630— When Materials Matter—Analyzing, Predicting and Preventing Disasters, M. Ausloos, A.J. Hurd,

M.P. Marder, 2000, ISBN: 1-55899-538-2

Prior Materials Research Society Symposium Proceedings available by contacting Materials Research Society






Documents

Thermoelectric Materials 2000— The Next Generation