Table of Contents 2006 IEEE International Electron Devices ... · annual technical conference, the International Electron Devices Meeting (IEDM). The 52nd IEDM will be held in San

EDS

N e w s l e t t e r

I E E E

ELECTRON DEVICES SOCIETY ELECTRON DEVICES SOCIETY ELECTRON DEVICES SOCIETY October 2006 Vol. 13, No. 4 ISSN:1074 1879 Editor-in-Chief: Ninoslav D. Stojadinovic

Your Comments SolicitedYour comments are most welcome. Please write directly to the Editor-in-Chief of the Newsletter at [email protected]

Table of Contents

Upcoming Technical Meetings .......................1

• 2006 IEDM • 2007 ICMTS

• 2006 SISC • 2007 NVSMW

June 2006 AdCom Meeting Summary.........3

Society News ......................................................10• Report on the IEEE EDS Mini-Colloquium

– Naples, Italy• EDS Meetings Committee Report• EDS Membership Committee Report• EDS Compact Modeling Committee Report• EDS Microelectromechanical Systems

Committee Report• 2005 EDS Paul Rappaport Award• 2005 EDS George E. Smith Award• Four EDS Members Were the Recipients

of Prestigious 2006 IEEE Medals• Congratulations to the EDS Members Recently

Elected to IEEE Senior Member Grade• New EDS Masters Level Student Fellowship

Program – Call for Nominations• EDS Distinguished Lecturer Visits the

ED Greece Chapter• EDS Region 8 Chapters Meeting Summary• IEEE Election – Did You Vote Yet?• EDS Membership Fee Subsidy Program• How to Form an IEEE Student Branch and

Student Branch Chapter• Online Access to IEEE Journals Available

to EDS Members• Annual EDS DVD Update Package Available

to EDS Members• EDS DVD Update Package Single Sale

Order Form

Regional and Chapter News .........................24

EDS Meetings Calendar ..................................34

EDS Distinguished Lecturers Participate in the 11th WIMNACT - Singapore .......36

The world’s premier forum for cutting-edge researchinto electronic, microelectronic, and nano-electronicdevices and processes is the Electron Devices Society’sannual technical conference, the International ElectronDevices Meeting (IEDM). The 52nd IEDM will be held inSan Francisco, California, U.S.A., at the Hilton San Fran-cisco and Towers Hotel. It will run December 11-13,2006, preceded by a full day of short courses on Sunday,December 10th.

The IEDM draws presentations and attendees fromindustry, academia, and governmental agencies world-wide. No other meeting presents as much leading workin so many different areas of microelectronics, encom-

2006 IEEE International

Electron Devices

Meeting (IEDM)

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2006 IEEE International

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2 IEEE Electron Devices Society Newsletter ❍ October 2006

President

Ilesanmi AdesidaUniversity of IllinoisE-mail: [email protected]

President-Elect

Cor L. ClaeysIMECE-mail: [email protected]

Treasurer

Juin J. LiouUniversity of Central FloridaE-Mail: [email protected]

Secretary

John K. LowellConsultantE-Mail: [email protected]

Jr. Past President

Hiroshi IwaiTokyo Institute of TechnologyE-mail: [email protected]

Sr. Past President

Steven J. HilleniusSemiconductor Research Corp.E-mail: [email protected]

Vice-President of Awards

Alfred U. Mac RaeMac Rae TechnologiesE-Mail: [email protected]

Vice-President of

Educational Activities

Paul K. L. YuUniversity of California at San DiegoE-Mail: [email protected]

Vice-President of Meetings

Jon J. CandelariaMotorolaE-mail: [email protected]

Vice-President of Membership

Albert WangIllinois Institute of TechnologyE-mail: [email protected]

Vice-President of Publications

Renuka P. JindalUniversity of Louisiana at LafayetteE-Mail: [email protected]

Vice-President of Regions/

Chapters

Cor L. ClaeysIMECE-Mail: [email protected]

Vice-President of Technical Activities

Mark E. LawUniversity of FloridaE-Mail: [email protected]

IEEE Newsletters

Paul Doto, Paul DeSessoIEEE Operations CenterE-Mail: [email protected],[email protected]

Executive Director

William F. Van Der VortIEEE Operations CenterE-Mail: [email protected]

Business Coordinator

Joyce LombardiniIEEE Operations CenterEmail: [email protected]

IEEE Electron Devices Society Newsletter (ISSN 1074 1879) is published quarterly by the Electron Devices Society of the Institute of Electrical and ElectronicsEngineers, Inc. Headquarters: 3 Park Avenue, 17th Floor, New York, NY 10016-5997. Printed in the U.S.A. One dollar ($1.00) per member per year is included in theSociety fee for each member of the Electron Devices Society. Periodicals postage paid at New York, NY and at additional mailing offices. Postmaster: Send addresschanges to IEEE Electron Devices Society Newsletter, IEEE, 445 Hoes Lane, P.O. Box 1331, Piscataway, NJ 08855-1331.

Copyright © 2006 by IEEE: Information contained in this Newsletter may be copied without permission provided that copies are not used or distributed fordirect commercial advantage, and the title of the publication and its date appear on each photocopy.

EDS AdComElected Members-at-Large

Elected for a three-year term (maximum two terms) with ‘full’ voting privileges

2006 Term 2007 Term 2008 Term

S.S. Chung (1) J. N. Burghartz (1) G. Baccarani (1)T. Hiramoto (2) M. J. Chan (1) J. Deen (1)L. M. Lunardi (2) M. Estrada del Cueto (2) F. J. Garcia Sanchez (2)M. Lundstrom (1) S. Ikeda (1) J.B. Kuo (1)A. Wang (1) R. J. Nikolic (1) J.J. Liou (2)H.S.P. Wong (2) N. D. Stojadinovic (2) H. Shang (1)X. Zhou (1) J. J. Wesler (1) J. W. Swart (1)

S. Tyagi (1)

ELECTRON DEVICES

SOCIETY

ELECTRON DEVICES

SOCIETY

CONTRIBUTIONS WELCOMECONTRIBUTIONS WELCOME

Readers are encouraged to submit news items concerning the Societyand its members. Please send your ideas/articles directly to either the Edi-tor-in-Chief or appropriate Editor. The e-mail addresses of these individu-als are listed on this page. Whenever possible, e-mail is the preferredform of submission.

Newsletter DeadlinesIssue Due Date

January October 1stApril January 1stJuly April 1stOctober July 1st

REGIONS 1-6, 7 & 9

Eastern, Northeastern & South-

eastern USA (Regions 1, 2 & 3)

Ibrahim M. Abdel-MotalebNorthern Illinois UniversityE-Mail: [email protected]

Central USA & Canada

(Regions 4 & 7)

Jamal DeenMcMaster UniversityE-Mail: [email protected]

Southwestern & Western USA

(Regions 5 & 6)

Sunit TyagiIntelE-Mail: [email protected]

Latin America (Region 9)

Jacobus W. SwartState University of CampinasE-mail: [email protected]

REGION 8

Eastern Europe & The Former

Soviet Union

Alexander V. GridchinNovosibirsk State Technical UniversityE-mail: [email protected]

Scandinavia & Central Europe

Andrzej NapieralskiTechnical University of LodzE-Mail: [email protected]

UK, Middle East & Africa

Zhirun HuUniversity of ManchesterE-mail: [email protected]

Western Europe

Cora SalmUniversity of TwenteE-Mail: [email protected]

REGION 10

Australia, New Zealand &

South Asia

Xing ZhouNanyang Technological UniversityE-Mail: [email protected]

Northeast Asia

Kazuo TsutsuiTokyo Institute of TechnologyE-mail: [email protected]

East Asia

Hei WongCity University of Hong KongE-Mail: [email protected]

Editor-In-Chief

Ninoslav D. StojadinovicUniversity of NisE-Mail: [email protected]

NEWSLETTER

EDITORIAL STAFF

NEWSLETTER

EDITORIAL STAFF

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The 2006 Springmeeting of theIEEE ElectronDevices Societywas called toorder by Presi-dent Ilesanmi“Ade” Adesida onSunday, June 4 atthe Royal Conti-nental Hotel in

Naples, Italy, in conjunction with theInternational Symposium on PowerSemiconductor Devices & IntegratedCircuits.

Executive ReportsAfter the December 2005 meetingminutes were approved, Ade’sremarks addressed the appointmentof Prof. Chang Liu (Univ. of Illinois) asChair of the new MEMS TechnicalCommittee, and progress on the elec-tronic membership directory to bemade available through the web-based, myIEEE, replacing the currentEDS online roster. In reviewing theNovember TAB meeting, he men-tioned a new date for the November2006 TAB Committee meetings, andapproval of the new algorithm to beused for the distribution of net rev-enue to societies from the new onlineshort course program (i.e. 90% to theparticipating societies and 10% toEAB for reinvestment). Other TABactions reported included the with-drawal of IEEE approval of the Jour-nal of Product Safety and granting theProduct Safety Engineering Society$50K (instead of an ASPP payout) forpublication support [Note: T-DMR andT-ED are being examined as alternatepublication venues as well.],approved a new indirect infrastruc-ture algorithm under which 25%would be split equally among all soci-eties, and 75% divided based on pack-age product revenues of societies andcouncils, and raising the upper limitof Society/Council initiatives to $100Kfrom $50K. Treasurer Juin Lioureports that EDS did well financiallymaking money on its major publica-tions. However, the financial outlookfor C & D Magazine continues to be

dim and the magazine will halt publi-cation at the end of 2006. Conferenceincome for 2005 closed at $541K[Note: All finances given in $US],Book Broker profits were $870K, andEDS investments returned $242K. Thefinal net surplus for 2005 was $691K.Juin also listed EDS’ Initiatives for the2007 budget (see page 5) with a totalcost of $135.5K, plus the addition of astaff person for the EDS office.

New President-Elect, Cor Claeys,in his ExCom report, discussed thecontinuation of globalization effortsincluding “focus visits”, that Beijingwill be the site for the Spring 2007AdCom meeting, the organization ofthe Region 9 meeting in Brazil, a pro-posal for a new magazine by theNanotechnology Council, a suggest-ed change to the EDS Field of Intereststatement to include biomedicaldevices and bioelectronics (seebelow), the continued financial andintellectual health of T-ED & EDL,continued work at establishing anEDS Education Award, proposedchanges in the Distinguished Lecturer(DL) program, and the pursuit of aMasters Level Student FellowshipProgram.

In his EDS Executive Office report,Bill Van Der Vort, presented a lengthylist of projects, either recently com-pleted, currently working on or soon

to be started. The Office’s list ofaccomplishments include gatheringand analyzing attendance data frompast Spring AdComs towardsimproving attendance, reviewing theMeetings Committee for redefiningits responsibilities, getting approvalsfor a revision of the EDS Field ofInterest Statement, working with EDSFinCom to develop the list of initia-tives for 2007, coordinating a revisionof the EDS Constitution and Bylawsto include the definition of the Execu-tive Committee (ExCom) and includ-ing the EDS Technical Committees,development of a proposal for anEDS Education Award, working withEdCom on course offerings for IEEE’sExpert Now Short Course venue,coordinating the efforts of theRegions & Chapters program to revi-talize the Chapter Partners program,beginning to solicit all EDS Fellowstowards becoming DistinguishedLecturers, coordinating new rulesand procedures for a new DL recogni-tion program to start in December2007, developing funding rules forchapters covering the DLs, mini-col-loquia, and chapter-sponsored con-ferences, and participating with EDSEduCom on a plan for dispensationof the short course videotape inven-tory. Also discussed was the Office’swork on a plan to convert the short

October 2006 ❍ IEEE Electron Devices Society Newsletter 3

John K. Lowell

EDS Treasurer, Juin Liou, presenting his report at the June 2006 AdCom Meeting.

June 2006 AdCom Meeting SummaryJune 2006 AdCom Meeting Summary

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course videotapes to CD/DVD format,the Student Career Guide Booklet,the program to establish a MastersLevel Student Fellowship, a plan todigitize legacy proceedings of theIRPS (1970-87), and the VLSI Sympo-sium (1981-87) in IEEE Xplore, for-malization of a plan for digitizingother legacy EDS conferences, coor-dination of a report to show EDSmeetings from both a topical andregional perspective, coordination ofdiscussion on getting approvals forseven meetings requesting EDS sup-port, development of both a directmail affiliate member promotion andan electronic membership directory,implementing changes to the Mem-bership Fee Subsidy Program toallow funding for renewals as well asnew memberships. With manuscripthandling, Bill’s group continued todefine the specifications on EDL man-uscripts entered and reviewed on theweb using Manuscript Central, to setguidelines to pursue best papersfrom conferences targeted for T-ED,and to allow authors in special issuesto have a related picture placed onthe T-ED cover. The Executive Officehas also been busy with other publi-cations by working with the T-DMRstaff to compose an IEEE alias list forIRPS attendees, continuing thephase-out of C & D Magazine, anddeveloping financial plans directed atlowering the T-DMR cost.

Vice-President Reports Cor Claeys, Regions/Chapters V-P,discussed the prospect of 25 newchapters in addition to the currenttotal of 120. Locations for theseprospective chapters include NewYork (state), Louisiana, New Mexico,Moldova, Belarus, Turkey, India, Chi-na, Brazil, Argentina, and Peru. He

also reviewed plans to reinvigorateUS-based chapters, and plans tocoordinate this with the SRCNAE/NAW groups. He also reviewedthe chapter budget. As of April 30,2006, EDS membership stands at10,370 members, down 3.7% whencompared to the April 30, 2005, fig-ure. Of these, 6,002 are regular mem-bers, 3,576 are permanent members,774 are students, and 18 remain affili-ate members. The demographics areshown in the chart below.

Membership V-P, Albert Wang,outlined his group’s efforts at recruit-ment such as conference onsite creditvouchers, TIP mailings, promotionalmaterial for Senior Member (SM), andDL promotion. Albert also reviewedan aggressive list of action items formembership including benefits pro-motion, local-level promotions, focusvisits to China and India (possiblyKorea and Taiwan too), conferencepromotions, and student incentives.

Renuka Jindal, V-P of Publications,discussed member hardcopy circula-tion numbers for both T-ED/EDL whichhave fallen below 2700. The trend cer-tainly suggests that a near zero papercirculation is not far off. Also includedin his talk were remarks on the impactfactor (the goal is to be at the topamong IEEE publications), addinglegacy material on EDS Archival DVDon IEEE Xplore, inadequate referenc-ing of prior art as grounds for rejec-tion and “Best Paper” selection,putting graphics on the front page ofT-ED special issues, and the financialstatus of both C & D Magazine and T-DMR. Renuka discussed the work ondispensing the EDS Short Coursevideos. Some have been given awayto chapters, and universities. Convert-ing them to DVD format has beenslowed by compression problems

affecting quality. Renuka alsoreviewed some projected changes tothe EDS Field of Interest Statement.Based on the ExCom and AdComfeedback, he will work on a new pro-posal which will be discussed inDecember at the IEDM. The prospectof a Nanotechnology Magazine hasbeen discussed by the PublicationsCommittee and ED NanotechnologyCommittee with a mild response. Theidea is being touted vigorously by theNanotechnology Council and some-thing should emerge soon.

The IEEE web-based educationsystem, Expert Now, is still in itsbeginning stage, as explained byPaul Yu, Education V-P. On the DLside, Paul suggested that Chaptersholding mini-colloquia might want toinclude some student posters, toencourage attendance and participa-tion. His group is also encouragingelected Fellows to become DL speak-ers. Of the 23 new fellows electedthis year, 9 have agreed to serve asspeakers. Proposals for the EDS Edu-cation, and for the Masters LevelGraduate Fellowship Awards will bepresented to TAB in June for finalapproval. A selection committee hasalready been formed for the Educa-tion Award, and has started lookinginto potential candidates. The awardis open to academia and industry andgovernment to recognize distin-guished contributions to educationwithin the field of interest of EDS.The chosen recipient will receive acertificate, $2.5K, and travel expensesto IEDM for presentation. Concerningthe Student Career Guide Booklet ini-tiative to promote ED to high schooland undergrad students, a survey ofstudents indicates their positive reac-tion to a physics curriculum as prepa-ration, good devoted teacher,hands-on experience, job/internshipperspectives, and electron devices asbecoming gateways to other areas,optics, nanotechnology and bioin-strumentation. It’s important to cre-ate a booklet that provides studentswith realistic answers. Discussion fol-lowed on the issue, “Is an ongoingwebsite/magazine about ‘career’needed?” A new initiative was intro-duced paving the way for EDS GOLDmembers to present at EDS spon-EDS Membership Demographics for 2006 (as of April 30, 2006)

IEEE Region Count % ofTotal

1-6 (United States) 5,835 56.3 7 (Canada) 178 .7 8 (Europe, Middle East & Africa) 1,829 17.6 9 (Latin America) 142 1.4 10 (Asia & Pacific) 2,386 23Total 10,370 100

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sored conferences as a way to stimu-late and encourage participation. Apoint of discussion centered on thefact that many industrial companiesare reluctant to send young employ-ees to attend meetings and to pre-sent new results. If approved, thenew proposal would allow EDS to

provide matching funds, up to 50%and $1500 in the form of registrationand/or workshop waiver & travelfunds for the EDS GOLD Member ifhis or her paper had been acceptedfor oral presentation at an EDS finan-cially sponsored conference. A com-mitment letter from the company

would also be required. The idea hasbeen tabled for study and will be dis-cussed at the December AdCom.

Closing Reports and Summary of AdCom ActionsThe meeting closed with reports fromthe Compact Modeling TechnicalCommittee, and the SRC NorthAmerica West. Only the approval ofthe December 2005 meeting minuteswere voted on and approved at thissession of AdCom. The next meetingof the EDS AdCom will be on Sun-day, December 10, 2006, in conjunc-tion with the 2006 IEDM Meeting inSan Francisco at the San FranciscoHilton & Towers Hotel.

John K. LowellEDS Secretary

Lowell ConsultingDallas, TX, USA

The 37th IEEE Semicon-ductor Interface Special-ists Conference (SISC)will be held in the Cata-maran Hotel, San Diego,CA, December 7-9, 2006,i.e., immediately prior tothe International Elec-t ron Devices Meet ing( IEDM). The SISC is aworkshop-style confer-ence that provides aunique forum for deviceengineers , sol id-statephysicists, and materialsscientists to openly dis-cuss issues of commoninterest. Principal topics for dis-cussion at SISC are semiconduc-tor / insulator inter faces, thephysics of insulating thin films,and the interaction among materi-als science, device physics, andstate-of-the-art technology.

An important goal of the con-

ference is to provide an environ-ment that encourages interplaybetween scientific and technologi-cal issues. Invited and contributedtalks, as well as a lively postersession, are presented in an infor-mal setting designed to stimulatediscussion, and conference partic-

ipants enjoy numerous oppor-tunities for social gatheringswith leading researchers andexperts in the field. The confer-ence alternates between theeast and west coasts , andmeets just before the IEDM toencourage the participation ofIEDM attendees.

Conference focusThe program includes approxi-mately 50 talks from all areas ofMOS science and technology. Thetopics evolve with the state-of-the-art, and include, but are not limit-ed to the following:

• physics of thin dielectrics and theirinterfaces

• gate-dielectric conduction andbreakdown

• alternative and high-k gate dielec-tric materials and metal gates

Upcoming Technical MeetingsUpcoming Technical Meetings

Proposed New EDS Initiatives for 2007 CostSociety Affiliate Promotion $20KIncrease Chapter Subsidy Budget $20KIncrease Budget for DL & SRC Developmentto Support Mini-Colloquia

$20K

Budget for Expert Now Program $40KAward Plaques for hosting ExCom Visits MinimalDevelop A Career Guide for Students $10KAnnual Reception for T-ED/EDL Reviewers $5.5KDigitize EDS Conference Legacy Material IEEE fundedManuscript Central Improvement $20K

2006 IEEE Semiconductor Interface

Specialists Conference (SISC)

Catamaran Hotel, San Diego, CA

2006 IEEE Semiconductor Interface

Specialists Conference (SISC)

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• nitrogen-containing oxides andstacked interfaces

• physical and electrical characteri-zation of Si/SiO2 interfaces

• micro-roughness measurement,modeling, and device-related effects

• hot carrier, plasma damage andradiation effects

• surface cleaning technology andeffects on dielectrics and interfaces

• theory of oxide and interface defects• silicon carbide and its interfaces• insulators on Ge and III-V materials • ferroelectric layers and stacks on

semiconductors

Invited presentationsThis year’s invited presentations willinclude:• Dr. Guillaume Ribes,

STMicro, FranceMulti-Vibrational HydrogenRelease: A dielectric breakdownmodel for ultra-thin SiO2/SiON and high-K stack

• Prof. Alex Shluger, University College, UKWhen Defects Approach aDevice Size

• Dr. Supratik Guha,IBM, USAThe Search for a High PerformanceMetal Gate/High-K MOSFET

• Prof. Peter Ye,Purdue University, USAOpportunities and Challenges for high-k/III-V MOSFETs

• Dr. Ted Moise,

Texas Instruments, USAEmbedded FRAM Technology

• Prof. Kenji Shiraishi,University of Tsukuba, JapanWhat happens at High-k/DielectricInterfaces?

• Dr. Sri Samavedam,Freescale Semiconductor, USATopic TBA

Unique poster sessionA unique feature of SISC is theattention paid to the poster presen-tations. Each author of a posterpresentation has the opportunityto introduce their work oral ly,using 2-3 visuals, to the entireSISC audience during specialposter introduction sessions. Theposters are then presented duringa separate poster reception onThursday evening, tentat ivelyscheduled this year at the Aquari-um of UCSD’s Scripps Institutionof Oceanography.

Student participationencouraged SISC is a popular conference withstudents, who can get immediateand candid feedback on their latestresults from the experts in thefield. In addit ion to a stronglyreduced registration fee for stu-dents, a Best Student Presentationaward is given every year in mem-ory of E.H. Nicollian, who mademany important contributions to

the field and had a strong presencewithin the SISC.

Accompanying programThe scientific content of the confer-ence is complemented by informalevents designed to encourage livelydiscussion and debate. A hospitalitysuite with complimentary drinks isavailable to attendees to continuetheir discussions on every eveningof the conference. Friday afternoonhas no scheduled talks, to allowtime to meet informally, relax onthe beach, or visit one of SanDiego’s numerous attractions. OnFriday evening the conferencehosts a banquet and awards cere-mony, complete with the now-famous (and always riotous)limerick contest. The limericks nev-er fail to give the conference pre-sentations, people and events anentirely new perspective!

SISC is always a rewardingexperience for specialists, stu-dents, as well as newcomers to thefield. For more information aboutthe conference, to consult its pro-gram and to register, please visithttp://www.ieeesisc.org. We hopeyou will include SISC in your IEDMitinerary.

Ben Kaczer2006 SISC Arrangements Chair

IMECLeuven, Belgium

The 2007 International Conference onMicroelectronic Test Structures (ICMTS2007), will be held at Takeda Hall of theUniversity of Tokyo, Japan, March 19-22, 2007. This is the 20th anniversary ofthe ICMTS. The conference is technical-ly co-sponsored by the IEEE ElectronDevices Society and sponsored by theAssociation for Promotion of Electrical,Electronic and Information Engineeringin cooperation with the Institute of

Electronics, Information and Communi-cation Engineers, the Japan Society ofApplied Physics, the VLSI Design andEducation Center, and the Universityof Tokyo.

The ICMTS has been advanced withthe progress of the semiconductorintegrated circuits. Test structure is thekey for research and development ofnew integrated circuits. Those for newprocess, device and circuit develop-

ments become more important as thefeature size is scaled down into sub-100 nanometer. Furthermore, they canprovide the rapid technology transferand quick yield improvements of newLSIs. Topics of the ICMTS have beenincreasing steadily from the funda-mental fields to the new fields: Low-kand high-k materials for high-perfor-mance LSIs, MEMS devices for sen-sors and RF ICs, etc.

2007 International Conference on

Microelectronic Test Structures (ICMTS)

2007 International Conference on

Microelectronic Test Structures (ICMTS)

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The first ICMTS was held in LongBeach in 1988, and has since takenplace in Europe, North America, andAsia, cyclically. In Asia, there were 5conferences in Japan. ICMTS 2007 isorganized by: General Chair, Y. Tama-ki (Hitachi Ltd.), Technical Chair, Y.Mita (The Univ. of Tokyo), LocalArrangements Chair, T. Ohguro(Toshiba Corp.), Tutorial Chair, K.Takeuchi (NEC Corp.), and Equip-ment Chair, S. Habu (AgilentTech. Japan).

The purpose of the confer-ence is to bring together design-ers and users of test structuresto discuss recent developmentsand future directions. The con-ference usually consists of 50papers in 9 oral sessions and 1poster session. Session topicswill include: “Device Characteri-zation”, “Yield & Process Char-acterization”, “Interconnect”,“Reliability”, “Parameter Extrac-tion”, “Matching”, “RF Measure-ments”, “Capacitance”, and“MEMS”. Oral presentations are 15minutes long with 5 minutes forquestions. The poster session is pre-ceded by a 5 minute oral presenta-tion by the author.

The one-day Tutorial Short Coursewill be held on March 19th. Thecourse is intended to provide the par-ticipants with a guideline on gooddesign, test and analysis. The instruc-tors have many years of experience inthe field of test structures. The Tutorialwill cover the test structure fundamen-tal which includes the history and top-ics of the ICMTS, Lithography,Parameter extraction, SPICE model-

ing, High mobility Devices, RF Mea-surements and MEMS.

There will be an equipment exhibi-tion relating to the latest test structuremeasurements: measurement instru-ments, wafer probing equipment,computer software for data analysis,parameter extraction and measure-

ment control.As you know, Tokyo is the capital

and largest city in Japan. Its’ popula-tion is 12 million and it is the center ofpolitics, economy and culture inJapan. The ICMTS will be held at theUniversity of Tokyo and this is the firsttime the conference is being held at auniversity campus in Japan. The Uni-versity of Tokyo was founded in 1877and celebrating its’ 130th anniversaryin 2007. The location of the conferencewas formerly the mansion of an old‘samurai’ leader. There are many his-torical buildings on campus: the redgate ‘Akamon’, which was built about300 years ago, is an important culturalproperty in Japan; Yasuda Hall and

the General Library were built about100 years ago; and there is also a nat-ural garden with a Sanshiro-ike pond.

The 2007 ICMTS will be held inTakeda Hall. In the Takeda Building,which was built three years ago, wehave a super clean room with goodequipment for making fine Si test

devices. The VLSI Design and Edu-cation Center (namely VDEC) isworking here, and fabrication ofvarious devices, including MEMSand material research, are beingperformed actively.

Just near the university, thereis Ueno Park, a large cultural parkwhich was opened to the publicin 1873. Also nearby is thefamous electric town, Akihabara,with many electronic parts shopsand big discount stores offeringall sorts of consumer electronicproducts. The official conferencehotel, Juraku at Ochanomizu, islocated between Akihabara and

Tokyo University. It only takes 5 min-utes from Tokyo Station to Ochano-mizu Station, by train. FromOchanomizu you can go to the uni-versity by subway or bus in 10 min-utes. For visitors from overseas,travel from Tokyo International Air-port (Narita) to the Tokyo train stationtakes about one hour.

For further information, please vis-it the ICMTS web site at http://www.ee.ed.ac.uk/ICMTS/. We are lookingforward to seeing you in Tokyo.

Yoichi Tamaki2007 ICMTS General Chair

Hitachi Ltd.Tokyo, Japan


The 2007 IEEE Non-Volatile Semicon-ductor Memory Workshop (NVSMW)will be held August 26-30th, 2007, inMonterey, California. The workshop issponsored by the IEEE ElectronDevices Society. NVSMW is a uniqueforum for both specialists in allaspects of non-volatile memorymicroelectronics and novices wantingto gain a broader understanding of

the field. Attendees represent profes-sional and academic researchersinvolved with semiconductor non-volatile memory development andproduction along with end users ofmemory products. Principal topics fordiscussion at NVSMW are: devicephysics; silicon processing; producttesting; new technologies, includingmulti-level-cell approaches; program-

mable logic; memory cell design; inte-grated circuits; solid state disks andmemory cards; memory reliability;and new applications.

An important goal of NVSMW is toprovide an informal environment toencourage discussions among partic-ipants and lively interactions. Therewill be morning and afternoon tech-nical sessions, along with lively

2007 IEEE Non-Volatile Semiconductor

Memory Workshop (NVSMW)

The historical red gate, ‘Akamon’, on the campus of theUniversity of Tokyo, Japan

2007 IEEE Non-Volatile Semiconductor

Memory Workshop (NVSMW)

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evening panel discussions on hottopics in the non-volatile memoryfield. Technical interaction amongpresenters and attendees is encour-aged through question and answersessions and allotting ample timeafter the formal paper presentationsfor further in-depth discussions.Organized breaks, including snacksand the workshop dinner and lunchare provided as opportunities to meetand exchange ideas with colleagues.Breakfasts are also provided. Themorning and afternoon technical ses-sions are organized in a manner toprovide ample time for the informalexchange and to enjoy the beauty ofthe Monterey peninsula region ofCalifornia.

This year will be the 22nd meetingof NVSMW. The workshop is heldevery 18 months, alternating betweenFebruary and August. For many years,the attendance for the workshop wasaround 100. In recent years, however,

the attendance has grown consider-ably, reflecting the large growth in theNon-volatile memory market, particu-larly flash memory and embeddedmemory on logic cores, with the atten-dance at the last several workshopsbeing in the 250-300 range. In order tomaintain the workshop atmosphere ofthe forum, the maximum attendance islimited. Therefore, advance registra-tion is highly recommended. NVSMWis attended by a wide internationalcommunity from North America,

Europe, Japan and other Asian coun-tries.The 2006 NVSMW program canbe found on the conference Web site— www.ewh.ieee.org/soc/eds/nvsmw/.

The 2007 NVSMW will be held atthe Hyatt Regency in Monterey, Cali-fornia. The hotel is conveniently situ-ated on the Monterey peninsula andallows fast access to many sights.Among favorite destinations are: thefamous Fisherman’s Wharf, CanneryRow, The Monterey Bay Aquarium,17-Mile Drive, nearby Carmel and themany tranquil sights of natural beau-ty of the Monterey coastline and thefine dining experiences of the area.The Hyatt Regency is located at: OneOld Golf Course Road, Monterey, Cal-ifornia. The hotel can be reached bytelephone: (831) 372-1234.

Stephen Keeney2007 NVSMW General Chair

Intel CorporationLeixlip, Ireland


Pacific Grove Coastline, Monterey-Carmel

passing both silicon and non-sili-con device and process technolo-gy, molecular e lectronics ,nanotechnology, optoelectronicsand MEMS (microelectromechani-cal system) technology.

IEDM 2006 will offer a full slate ofshort courses, evening paneldebates, invited plenary talks andpresentation of prestigious IEEE/EDSawards, in addition to an outstandingtechnical program.

Emerging TechnologySessionIEDM 2006 will feature a specialsession with papers focused onthe use of self-assembly and nano-patterning for device fabrication.

Short CoursesThis year the Short Courses willbe: “32 nm CMOS Technology”and “Advanced Memory Devicesand Technology.” These courseswill give attendees the opportuni-

ty to learn about emerging newareas and important develop-ments, and to benefit from directcontact with lecturers who areexperts in the f ie ld. They alsoinclude introductory material forgeneral audiences. Advance regis-tration is required.

Technical ProgramThis year’s technical areas of cov-erage are: • CMOS Devices• CMOS and Interconnect Reliability• Displays, Sensors and MEMS• Integrated Circuits and

Manufacturing• Modeling and Simulation• Process Technology• Quantum, Power and Com-

pound Semiconductor Devices• Solid State and Nanoelectronic

Devices

The CMOS Devices sessions willcover breakthroughs and advance-

ments in device physics; novelMOS device structures (such asmult ip le-gate and non-planarFETs); circuit/device co-optimiza-tion; CMOS scaling issues; high-performance, low-power andanalog/RF devices; SOI ; h igh-mobility channel devices such asstrained sil icon and SiGe MOSdevices; noise behavior of MOSstructures and device measure-ments and characterization.

CMOS and Interconnect Reli-ability will cover all areas of relia-bil i ty for both the front- andback-end of the process. Topics willinclude, but are not limited to hotcarriers; gate dielectric wear-outand breakdown; process chargingdamage; latch-up, ESD and softerrors; bias temperature instabili-ties; reliability of high-k and low-kmaterials, circuits and packaging;interconnect reliability, electromi-gration, and the impact of back-endprocessing on devices; manufactur-

(continued from page 1)

2006 IEEE International Electron Devices Meeting (IEDM)2006 IEEE International Electron Devices Meeting (IEDM)

13eds04.qxd 9/15/06 1:13 PM Page 8


ing technologies for reliability;physics of failure analysis; and reli-ability issues for memory and logictechnologies.

Displays , Sensors andMEMS sessions will cover criticaldevices, structures and integra-tion for imaging, displays, detec-tors , sensors , and MEMS. Asubset of key topics would includeCMOS imagers ; CCDs; TFTs;organic, amorphous and polycrys-talline devices; vacuum microelec-tronics; emissive displays; andsensors for chemical, molecularand biological detection. MEMStopics include resonators, switch-es and passives for RF applica-t ions; integrated sensors ;micro-optical and micro-fluidicdevices, and micro-power genera-tors. Particular emphasis will beplaced on integrated implementa-t ions. Other re levant subjectsinclude design, fabrication, relia-bility, theory and modeling.

Integrated Ci rcui ts andManufactur ing sessions wi l lfocus on advances in integratedcircuits technology; full processintegration for memory, logic andmixed-mode (SOC) applications;and manufacturing. Areas of inter-est include process architecturefor performance and manufactur-ing, high-speed logic, advancedmemories and multifunction inte-grated circuits; and integratedpassives, low-power, low-noise,analog, RF and mixed signal ICs.Topics also include IC manufactur-ing technology and methodology,3-D integrated circuits, processcontrol, yield enhancements andmodeling.

Modeling and Simulationsessions will discuss all areas ofanalytical, numerical, and statisti-cal approaches to the modeling ofelectronic, optical and multiphysi-cal devices, their isolation andinterconnection; physical and cir-cuit models for devices and inter-connects; and the modeling offabrication processes and equip-ment, including simulation algo-

rithms, process characterization,and parameter extraction. Sub-miss ions should advance themodeling and simulation art orapply existing techniques to gainnew insights into devices.

Process Technology sessionswil l cover front- and back-endprocess modules for fabrication oflogic, memory and 3-D integratedcircui ts . Front-end topics wi l linclude substrate technologies;l ithography; etching; isolation;thin dielectrics; high-k materialsand metal electrodes for transis-tors and MIM capacitors; shallowjunctions; silicides; self-assemblytechniques and new materials.Back-end topics will include con-ductor systems; low-k materials,contact and via processes; barriermater ia ls ; p lanar izat ion, anddesign considerations for multi-level interconnects.

Quantum, Power and Com-pound Semiconductor Devicessessions wil l cover compoundsemiconductors with electronic andoptoelectronic device applications(e.g. GaAs, InP, GaN, SiC, SiGe,antimonides and related alloys).Papers also will discuss discreteand integrated high-power/cur-rent/voltage devices includingthose on silicon. Topics will includeFETs, HBTs, LEDs, lasers, externalmodulators, and high-power andcompound RF and millimeter-wavedevices. Also, devices with ballis-tic, quantum, and single-electroneffects; spintronics, optoelectronicICs, optical interconnects; photonicbandgap structures and crystals,and integrated RF componentsincluding inductors, capacitors andswitches.

Solid State and Nanoelec-tronic Devices sessions wi l lfocus on novel sol id state andnanoelectronic devices for bothlogic and memory applications,such as nanowires, nanotubes andquantum dots; devices for bioelec-tronic applications; spintronic-based devices; MEMs-based logicand memory devices; and molecu-

lar devices. Papers on new deviceand mater ia l character izat iontechniques also will be presented.

Plenary PresentationsThis year’s plenary talks will be giv-en by Dr. C.G. Hwang of SamsungElectronics, Dr. Maarten Vertregt ofPhilips Research and Prof. KensallWise of the University of Michigan.

Evening Panel SessionsIEDM 2006 wi l l feature twoevening panel sessions on Tues-day, December 12th. One, orga-nized and moderated by StefanLai of Inte l , wi l l deal with thequest ion, “Wil l NAND FlashReplace Logic to be the Technolo-gy Driver for the SemiconductorIndustry?” Another, organized andmoderated by Clement Wann ofIBM, is on the topic, “Who WillSolve the Variability Challenge?”

For Registration and other informa-tion, visit the IEDM 2006 home page atwww.ieee.org/conference/iedm or con-tact Conference Manager, PhyllisMahoney, 16220 S. Frederick Ave.,Gaithersburg, MD 20877, USA; tel.(301) 527-0900, ext. 103; fax (301)527-0994; or email: [email protected]. The submission datefor regular papers has alreadypassed, but a limited number ofLate-News Papers will be accept-ed for presentation until September12, 2006.

The San Francisco area providesmany attractions for visitors and weencourage attendees to explore themin the off hours of the conference.The IEDM committee members lookforward to seeing you in December.

Vivek Subramanian2006 IEDM Publicity Chair

University of California at Berkeley

Berkeley, CA, USA

Meikei Leong2006 IEDM Publicity Vice-Chair

IBMYorktown Heights, NY, USA

13eds04.qxd 9/15/06 1:13 PM Page 9


Society NewsSociety News

The Electron Devices Society SRC-EAMhosted a Mini-Colloquium event onThursday, June, 1, 2006, in the Facultyof Engineering at the University ofNaples, Italy.

The Mini-Colloquium was the firstof a number of EDS related eventsheld in Naples, including the EDSExCom Meeting and EDS Region 8Chapters Meeting on June 3, the EDSAdCom Meeting on June 4, and theISPSD (International Symposium onPower Semiconductor Devices andIntegrated Circuits) on June 4-7.

The purpose of the Mini-Colloqui-um was to gather together a numberof highly recognized EDS Distin-guished Lecturers and offer theirtechnical presentations to an audi-ence composed of students from thelocal University of Naples and of sci-entists who planned on attending theEDS Meetings later in the week.

The Program of the Mini-Colloqui-um included ten very dense presenta-tions and commenced with a talkentitled “Quasi Ballistic Transport inNano-MOSFETs”, by Enrico Sangiorgifrom the University of Bologna. Dr.Sangiorgi illustrated the main featuresof the current transport mechanismsin modern nanometric MOSFETs. Thesecond lecture, entitled “Future CMOSScaling and It’s Manufacturing”, wasgiven by Prof. Hiroshi Iwai, from theTokyo Institute of Technology andEDS Jr. Past-President. Prof. Iwaidescribed the technology and manu-facturing issues for future CMOSdown-scaling towards its limits andconfirmed the need for the introduc-tion of quite new technologies such asnew materials, processes, and struc-tures. The third speaker, Prof. MikaelOstling from the Royal Institute ofTechnology in Sweden (KTH), report-ed on recent technology advances inthe fabrication of decananometerMOSFETS with non-conventionalchannel material (strained silicon onSiGe). The morning program contin-ued with Dr. Hisayo Momose fromToshiba Corporation, whose talk enti-

tled ‘CMOS Technology for sub-50 nmGeneration’, analyzed the difficultiesand road blocks opposing CMOS tech-nology development and concentrat-ed on the gate stack issues. Inparticular Dr. Momose illustrated thepresent development status of high-kmaterials for the gate dielectric andcompatible metal gate materials andhow these technologies stand com-pared to the traditional PolySi-SiO2stacks to Metal Gate-High K stacks. Dr.Gady Golan, from the Holon Instituteof Technology, Israel, completed themorning program with his talk enti-tled: “Novel Sheet Plasma Sputteringand Vacuum Photo-Thermal Anneal-ing”. Dr. Golan described how sheetplasma sputtering enables the produc-tion of fine controlled thin film coat-ings with predefined properties whileVacuum Photo-thermal Processingenables homogenization and modifi-cation of deposited thin films, curingof complex multilayer systems, finecontrol on mechanical properties ofthin films. Joint application of bothdescribed methods enables to pro-duce various thin film systems withpredefined and fine controlled physi-cal properties, several key technologi-cal steps which are needed tofabricate flexible and affordable solarcell arrays.

After lunch served on the premises,the very busy scheduled continuedwith a presentation given by Prof.Massimo Rudan, from the Universityof Bologna, on “Advanced Modelingfor Emerging Nanoscale Devices”.Prof. Rudan illustrated recent advancesin the state of the art of modeling newemerging devices for the post CMOS

devices including FINFET, Doube-GateSOI, Silicon Nanowires (SNW), andCarbon Nanotubes (CNT). The Mini-Colloquium continued with a reportfrom Prof. Juin Liou, from the Univer-sity of Central Florida, entitled “TCADMethodology for Design and Imple-mentation of Advanced ElectrostaticDischarge (ESD) Devices”. Dr. Lioudescribed the methods and tools todesign efficient ESD protectiondevices. A similar topic was tackled byProf. Albert Wang from the Illinois Uni-versity of Technology, who illustratedthe problem of designing ESD protec-tion devices for RF Integrated Circuits.

After the afternoon coffee break,the last two lectures of the day werefocused on optoelectronics applica-tions. The first talk entitled “Opto-electronic sensors for optical fibernetworks”, by Prof. Antonello Cuto-lo, from the University of Sannio,reported on recent exiting develop-ments on new optical sensors whichcan be directly integrated in opticalfiber networks. The program of theday was closed by Prof. Paul Yu whospoke on “Advances in PhotonicDevices for Analog Fiber Link Appli-cations“; he gave a very thoroughoverview of the field.

The Mini-Colloquium, attended bynearly 40 graduate students and EDSscientists, both from the local South-ern Italy Chapter and from abroad,was organized by Enrico Sangiorgi,EDS SRC-EAM Vice-Chair.

Enrico SangiorgiEDS SRC-EAM Vice-Chair

University of BolognaForlì-Cesena, Italy

Report on the IEEE EDS Mini-Colloquium –Naples, Italy

Report on the IEEE EDS Mini-Colloquium –Naples, Italy

Attendees of the EDS Mini-Colloquium held June 1, 2006, at the University of Naples

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EDS MEETINGS COMMITTEE REPORT

Technical meet-ings, conferences,and symposiasponsored by theElectron DevicesSociety are at thecore of the valuebeing delivered toour IEEE EDSmembership aswell as to the

technical community at large. Given the importance of the tech-

nical conferences and meetings, theEDS Meetings Committee is made upof members from the leadership ofthe EDS including the Vice-Presidentof Technical Activities, the Vice-Presi-dent of Regions/Chapters, and theSociety Treasurer. In addition, thecommittee receives outstanding sup-port from the EDS Executive Office.The primary purpose of the Commit-tee is to develop and execute astrategic plan which creates guidanceand oversight for existing and newly-created conferences, meetings, andsymposia which seek support fromthe Electron Devices Society. Thisstrategic plan encourages fiscalresponsibility, continuous improve-ment, alignment amongst the meet-ings and with the core values andgoals of the EDS and IEEE, and helpsto ensure that they provide thetremendous technical value our Soci-ety’s members have come to expectand appreciate over the past severaldecades of our existence.

Starting in 2006, EDS will finan-cially sponsor or co-sponsor 26 meet-ings and will be technical co-sponsorfor another 133, for a total of 159.

This total number is up about 10%over last year and is up over 50%within the last 10 years! This yearEDS became involved with newmeetings in regions of the world asdiverse as Siberia, Serbia & Mon-tenegro, Spain, Australia, Ukraine,and Switzerland.

In terms of attendance, the Inter-national Electron Devices Meeting(IEDM) is usually the largest EDSmeeting with as many as 2000 atten-dees and then there are workshopsor regional meetings with as few as40-50 in attendance.

The EDS support falls into twocategories: ones where the EDS isthe primary sponsor or co-sponsor(with another IEEE Society or anoth-er professional society) for whichwe share financial responsibility, orones where EDS is just a technicalco-sponsor (with another IEEE Soci-ety or another professional society).In the former cases, EDS usuallyprovides a financial advance toassist with meeting organizationand planning and also provides afinancial backstop for the meetingand liability insurance. In return,EDS expects the advance to berepaid and to receive any budgetsurplus from these conferenceswhich then goes back to supportsuch meetings in the future. Thisreturn of budget surplus is one ofour major revenue streams, and foran average calendar year, this typi-cally amounts to approximately$350,000 or more.

Technical sponsorship refers tomeetings that the EDS has deter-mined align with the technical scope

of the Society and allows for the useof the IEEE and EDS logos, advancenotices in calendars and official listsof EDS and IEEE meetings. Thesetypes of meetings again are deemedto be of technical interest to themembership with typically somemembership involvement, but theEDS has no financial liability or stakein these types of meetings.

For an established EDS sponsoredor co-sponsored meeting, plans forthe meeting’s next occurrence andtheir proposed budget is reviewed bythe Executive Office, the Vice-Presi-dent for Meetings, and the Treasurer.EDS repeat meetings scheduled for2007 were approved at the 2005December AdCom Meeting held at theIEDM. Repeat occurrences of meet-ings that receive technical co-sponsor-ship only are approved on the sameschedule. Proposed new meetingswith or without financial involvementare required to provide organizationalinformation and plans to the EDSExecutive Office (contact Joyce Lom-bardini, [email protected]) andthis information is reviewed by theMeetings Committee members andrelevant EDS Technical Committees todetermine what, if any, EDS involve-ment should occur.

We welcome your comments andsuggestions for continuously improv-ing the operations of the MeetingsCommittee; and in turn, provide a valu-able service to our EDS membership.

Jon J. CandelariaEDS Vice-President of Meetings

Motorola LabsTempe, AZ, USA

Jon J. Candelaria

At the end of2005, the totalnumber of EDSmembers was11,219. WhileMembership relat-ed activities havebeen strong in thepast year, we didsee a decline in the

total EDS member count – of 6.5%. Ingeneral, the loss of members has beena problem for IEEE as a whole and thedeclining rate for EDS members was atthe average level for IEEE societies.Apparently, this is a big problem thatmust be studied thoroughly andaddressed actively in order for theIEEE to survive in the new InternetAge. As a breakdown analysis, the

number of Regular EDS membersincreased slightly compared to 2004.However, we lost about 235 Perma-nent Members and 48 Student mem-bers. Though the loss of PermanentMembers was in our expectationbecause EDS stopped the offering ofPermanent Membership, we do needto worry about the status of studentmembership. In fact, feedback fromAlbert Wang

EDS Membership Committee Report

EDS MEETINGS COMMITTEE REPORT

EDS Membership Committee Report

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The CompactModeling Techni-cal Committee(CMTC) of EDSwas founded in2001 to objectivelyidentify, examine,and evaluateemerging compactmodels for circuitsimulation and

promote interactions among Compactmodel developers, technology devel-opers, and circuit designers. The first

Chair, Dr. Narain Arora, served for twoterms. The present CMTC consists of20 members worldwide who areactively involved in R&D as well as realtime application of compact modeling.

The major accomplishment of the2005-2006 committee is the publicationof a Special Issue (September 2006), ofIEEE Transactions on Electron Deviceson “advanced compact models and 45-nm modeling challenges,” to bringtogether a diversity of R&D activitiesand advancement in compact MOSand emerging device models as well as

models for passive components. TheSpecial Issue included a total of 24 rig-orously reviewed papers with 11 invit-ed and 13 regular papers. The majorhighlights of the Special Issue paperare advanced surface-potential basedMOS models for circuit simulation ofsub-90 nm technologies, advancedmodels for non-quasi-static (NQS)effects to apply in conjunction with sur-face-potential as well as charged basedbasic MOS compact models, advancedcompact models to account for quan-tum-mechanical (QM) effects in


Samar Saha

EDS Compact Modeling Committee Report

local universities and university branchchapters indicate that to convince stu-dents to join EDS (and IEEE) and tokeep graduating students within EDShas been a challenging task in recentyears. This indeed is a huge potentialproblem and challenge to the Society,because maintaining students’ stronginterests in EDS in their early careerperiod shall be very critical to thefuture well-being of the Society. TheSociety as a whole must think creative-ly and work harder to promote the val-ue of EDS to students in the field.Regionally, the United States (Regions1-6) still accounts for about 50% of thetotal EDS members; however, theseregions lost more than 200 membersin 2005. Regions 7 (Canada) and 8(Europe, Middle East, & Africa) alsosaw a loss as well, while Regions 9(Latin America) and 10 (Asia & Pacific)enjoyed a moderate increase in mem-bership counts. By the end of 2005,members in Asia and the Pacific(Region 10) increased to around 22.6%of the total EDS members, which is inagreement with the fact that the semi-conductor industry in Region 10becomes more and more important.There is no question that EDS mustpay more attention to the Region 10for the future prosperity of the Society.

In 2005, the Membership Commit-tee had been working hard and collab-orating with the Regions/ChaptersCommittee and the Education Commit-tee to promote the EDS membership.In 2005, we held the annual on-siteMembership Credit Voucher promo-tion at the IEDM that rewarded us with

a net gain of 69 new members. As asimilar effort, we distributed EDSmembership promotional materials toabout 30 EDS sponsored conferences.We also provided EDS membershippromotional packets to many Distin-guished Lecturers over the past year.EDS continues the Membership FeeSubsidy Program (MFSP), which subsi-dizes IEEE and EDS memberships forindividuals who have an annualincome lower than US$11,600. In 2005,13 Chapters participated in the MFSPprogram with a total of 101 membersthat received the benefit. The programcost EDS about $4.7K in 2005. ThisMFSP initiative proves to be a goodway to help jump-start a new chapterand we will continue this program aslong as EDS maintains healthy finan-cials. EDS also continues to coordinatethe EDS Senior Member Program toencourage EDS members to apply forSenior Membership. In this effort, EDSsent emails to approximately 5,800EDS members with the grade of ‘M’encouraging them to apply foradvancement to Senior Member grade.As a result, 69 EDS Members were pro-moted to Senior Member grade in thefirst four months of 2006. EDS will keepthis Senior Membership promotioneffort because it is believed to be a criti-cal way to maintain the member inter-ests in the Society. It has beensuggested recently that the high cost ofIEEE membership dues and assess-ment fees may be a killer to many pro-fessionals joining EDS. To address thispossible problem, EDS started a newAffiliate Membership Program that was

designed to provide people the oppor-tunity of just joining EDS but not IEEE.An individual just needs to be a mem-ber of another technical society, out-side of the IEEE, to qualify forbecoming an EDS Affiliate Memberand pays a much reduced fee of $71.An Affiliate Member is not eligible forIEEE benefits, however, does enjoy allthe EDS benefits as a regular member,with a few exceptions such as an indi-vidual cannot run for an ‘elected’AdCom position, yet may still hold anappointed position. EDS recentlymailed the EDS promotional packets toapproximately 12,000 non-IEEE/EDmembers in May 2006 and we will seehow this new promotional programwill work.

In 2006, I was appointed as the newmembership Vice-President; and inturn, I made some new appointmentsto the Membership Committee. TheMembership Committee and the EDSas a whole will certainly keep theefforts to promote EDS membership, inparticular, to enhance our promotionalthrusts in Region 10 and all studentcommunities while maintaining ourattentions in all other Regions. Wekindly challenge every society memberto contribute to this critical member-ship drive and offer us your creativesuggestions. Together, we can certain-ly make our beloved Society better andstronger!

Albert WangEDS Vice-President of Membership

Illinois Institute of TechnologyChicago, IL, USA

EDS Compact Modeling Committee Report

13eds04.qxd 9/15/06 1:13 PM Page 12

Prof. Chang Liu ofthe Electrical andComputer Engi-neering Depart-ment of theUniversity of Illi-nois has taken onthe responsibilityas the new chair ofthe EDS MEMStechnical commit-

tee in March 2006. Subsequently, anew committee has been formed. Thecommittee is well balanced in terms oftechnical areas (sensors, displays, andMEMS), professions (academia, indus-try, and government), and geographi-cal regions.

Today, the field of MEMS is as excit-ing as ever in terms of achievementand potentials. Both the state of art ofMEMS technology and industrializationhas been changed significantly fromthose of ten years ago. Many MEMSproducts, such as digital light projec-tors (DLP), accelerometers, pressuresensors, and ink jet printers, are nowentering the main stream of societyand their respective industries. Forexample, DLP projectors are now com-peting in the market of large screenTVs for homes. Ink jet printers are nowbeing used to print large banners andposters instead of merely home pho-tos. MEMS display and sensor technol-

ogy is projected to grow faster in thenext ten years, coinciding with the newindustrial and societal trend of mobileand smart electronics (e.g., cell phones,motion-sensitive game players, andsmart shoes). The cell phone market isa natural fit for MEMS technology, forits large volume demand, low costmandate, and small form factorrequirements. It is expected to spur thegrowth of MEMS sensor, display, RFMEMS, and bioMEMS.

MEMS technology is advancingrapidly with several important trends,including IC compatibility, packagingsimplicity, and new functional materi-als. Ten years ago, the MEMS commu-nity struggled with issues such aswhether and how to integrate micro-mechanical elements with circuitry,and lacked powerful methods of pack-aging. Today, many exciting newpaths have been demonstrated.MEMS processes that seamlessly inte-grate circuits and micromechanicalelements can result in lower cost andbetter performance. Many innovativesolutions for packaging micro mechan-ical components have been developedin recent years to increase the reach ofuse. New materials such as organicpolymers and nano composite materi-als are being introduced to augmentthe existing metal-semiconductormaterial paradigm.

The MEMS technology is alsoplaying strong roles in the areas ofbiotechnology and nanotechnology.MEMS products and microfabricationprocesses are permeating manyareas. For example, ink jet devicesand DLP are being used for patterningbiomolecules. Micro-scale fabricationtechnologies are being used for andin conjunction with nanofabricationtechniques.

In the next two years, the EDSMEMS Technical Committee willimplement initiatives and plan activitiesalong two primary agendas: (1) repre-senting and communicating state ofthe art MEMS research and commer-cialization strongly to the main streamof the EDS; and (2) increasing the levelof interaction between researchers inthe MEMS area and those in other EDSareas. We intend to increase the repre-sentation of high quality MEMS workin main conferences and journals. Wewill also encourage interaction ofMEMS researchers with the rest of thesociety through participation in nation-al-, regional- or local-level conferencesand seminars.

Chang LiuEDS MEMS Committee ChairUniv. of Illinois at Urbana-

ChampaignUrbana, IL, USA


advanced circuit design, noise model-ing, modeling process variations andlayout proximity effects in advancedcircuits, and so on.

Another accomplishment of CMTCis the annual Workshop on CompactModeling (WCM) under the activeinvolvement of its committee mem-bers. This year WCM 2006 was heldconcurrently with MSM 2006 at HaynesConvention Center, Boston, MA, underthe General Chair, Prof. X. Zhou, anactive CMTC member. The workshopbrought together compact modeldevelopers and users communitytogether worldwide.

The future plan of CMTC is to pro-pose a new online journal, IEEE Trans-

actions on Applied Compact Modeling(T-ACM), aimed at reporting leadingedge information that is critical to theindustrial usage of compact modelsfor advanced circuit simulation. Theobjective of the online publication is tooffer compact model developers andpractitioners the electronic media torapidly report alternative modelingchoices, model validation, accuracy,applications, numerical issues, and soon for the current and the next genera-tion of industry standard compact tran-sistor models as well as models forpassive components. The other intend-ed feature of the proposed journal is tobring interactivity – offer readers’ capa-bilities to perform simulation and

model verification in real time. Thescheduled plan to re-submit the pro-posal in the second half of 2006 withan anticipation to bring out the publi-cation in the year 2007.

The other important goals are tofacilitate collaboration among modeldevelopers and foundries for the char-acterization of emerging compact-models and facilitate IEEE seminarsdistinguished lecturers, conference ses-sions, etc., on compact modeling.

Samar SahaEDS Compact Modeling Technical

Committee ChairSynopsys, Inc.

Mountain View, CA, USA

Chang Liu

EDS Microelectromechanical Systems

(MEMS) Committee Report

EDS Microelectromechanical Systems

(MEMS) Committee Report

13eds04.qxd 9/15/06 1:13 PM Page 13

A high priority of the Electron DevicesSociety is to recognize and enhancethe quality of papers published in EDSarchival literature. Every year, the Soci-ety confers its prestigious Paul Rappa-port Award to the best paper publishedin the IEEE Transactions on ElectronDevices. Among other criteria includ-ing technical excellence, an importantmetric for selection for the award iscomprehensive and impartial referenc-ing of prior art. The winning paper wasselected from among 329 manuscriptsthat were published in 2005. The articleis entitled, “Impact Ionization MOS (I-MOS) - Part I: Device and Circuit Simu-lations and Part II: ExperimentalResults”. This paper was published inthe January, 2005 issue of the IEEETransactions on Electron Devices, andwas authored by Kailash Gopalakrish-nan, Peter B. Griffin, James D. Plum-mer, Raymond Woo and ChristophJungemann. The award will be pre-sented in the plenary session of theInternational Electron Devices Meetingto be held on December 11, 2006, inSan Francisco, CA. In addition to theaward certificate, the authors willreceive a check for $2,500. On behalf ofthe Electron Devices Society I wouldlike to congratulate the authors for thisachievement. Brief biographies of theauthors are given below.

KAILASHGOPALAKRISHNANwas born in Bom-bay, India. Hereceived the B.S.degree from theIndian Institute ofT e c h n o l o g y ,Bombay, India,

and the M.S. and Ph.D. degrees inelectrical engineering from StanfordUniversity, Stanford, CA. Since July2004, he has been a Research StaffMember at the IBM AlmadenResearch Center, San Jose, CA. Hismain research interests are novel“beyond the roadmap” logic andmemory devices, device modelingand simulation, and nanoimprintlithography.

PETER B. GRIFFIN(No photo available)received the B.E. and M.E. degreesfrom University College, Cork, Ireland,in 1981 and 1983, respectively, and thePh.D. degree from Stanford University,Stanford, CA, in 1989. He is currentlywith Stanford University. His researchinterests include process integrationand scaling of MOS transistors, com-pound semiconductors, and biomems.

JAMES D.PLUMMERwas born in Toron-to, ON, Canada. Hereceived the B.S.degree from theUniversi ty ofCal i fornia, LosAngeles, and the

M.S. and Ph.D. degrees in electri-cal engineering from StanfordUniversity, Stanford, CA. He iscurrently the John Fluke Professorof Electrical Engineering, the Fred-erick E. Terman Professor of Engi-neering, and Dean of the Schoolof Engineering at Stanford Univer-sity. He has authored or coau-thored over 300 technical papers.His current research interestsfocus on silicon devices and tech-nology. He is particularly interest-ed in the limits of silicon devicesand technology, new applicationareas for chips, and in exploringpossible replacement technolo-gies for silicon chips. He consultsfor and serves on the boards of anumber of semiconductor compa-nies. Dr. Plummer has receivedthree Best Paper Awards at theInternational Solid State CircuitsConference. In 1991, he receivedthe Solid State Science and Tech-nology Award from the Electro-chemical Society . He has a lsoreceived several teaching awardsat Stanford University. He waselected to the National Academyof Engineer ing in 1996, andrecently received the Semiconduc-tor Industry Association’s 2001University Research Award.

RAYMONDWOOwas born in Paoli,Pennsylvania in1981. He receivedthe B.S.E. degreein electrical engi-neering and com-puter science from

Duke University in 2002. He is cur-rently a National Science FoundationGraduate Research Fellow and Ph.D.student in the Electrical EngineeringDepartment at Stanford University.

CHRISTOPHJUGEMANN(M’97) received theDipl.-Ing. and theDr.-Ing. degrees inelectrical engineer-ing in 1990 and1995, respectively,from the RWTH

Aachen (Technical University ofAachen), Aachen, Germany and the“venia legendi” for “Theoretische Elek-trotechnik” in 2001 from the Universityof Bremen, Bremen, Germany, respec-tively. From 1990 to 1995 he was aResearch and Teaching Assistant at the“Institut für Theoretische Elektrotech-nik,” RWTH Aachen. From 1995 until1997 he was with the Research andDevelopment facility of Fujitsu Limited,Kawasaki, Japan. He served as a ChiefEngineer at the “Institut für Theoretis-che Elektrotechnik und Mikroelektron-ik,” University of Bremen, from 1997until 2002. From 2002 to 2003 he spenta one-year sabbatical at the Center forIntegrated Systems, Stanford Universi-ty, Stanford, CA. Since 2003, he hasbeen a Research Associate at the Tech-nical University of Braunschweig,Braunschweig, Germany. His mainresearch interests are full-band MC sim-ulation of Si and SiGe devices, numeri-cal device modeling, transport ininversion layers, and noise modeling.

Renuka P. JindalEDS Vice-President of PublicationsUniversity of Louisiana at Lafayette

Lafayette, LA, USA


2005 EDS PAUL RAPPAPORT AWARD2005 EDS PAUL RAPPAPORT AWARD

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A high priority of the ElectronDevices Society is to recognize andenhance the quality of papers pub-lished in EDS archival literature.The George E. Smith Award wasestablished in 2002 to recognizethe best paper appearing in a fastturnaround archival publication ofEDS, targeted to IEEE ElectronDevice Letters. Among other crite-ria including technical excellence,an important metric for selectionfor the award is comprehensiveand impartial referencing of priorart. The paper winning the 2005George E. Smith Award was select-ed from among 270 manuscriptsthat were published in 2005. Thearticle is entitled “Pentacene TFTDriven AM OLED Displays”. Thispaper appeared in the September,2005 issue of Electron Device Let-ters and was authored by LisongZhou, Sungkyu Park, Bo Bai, JieSun, Sheng-Chu Wu, Thomas N.Jackson, Shelby Nelson, DianeFreeman and Yongtaek Hong. Theaward will be presented in the ple-nary session of the InternationalElectron Devices Meeting to beheld on December 11th, 2006 inSan Francisco, CA. In addition tothe award certificate, the authorswill receive a check for $2,500. Onbehalf of the Electron Devices Soci-ety I would like to congratulate theauthors for this achievement. Briefbiographies of the authors follow.

LISONG ZHOUreceived the B.S.and Ph.D. degreesin Electronic Engi-neering fromTsinghua Univer-sity, Beijing, Chi-na, and ElectricalEngineering from

Pennsylvania State University, PA,USA, in 1996 and 2006, respectively.He joined Applied Materials in 2006.His research interests are a-Si:H andorganic thin film transistors, photo-voltaic devices, flexible thin film elec-tronics, microfabrication techniques.

SUNG KYUPARK(M’01) received theB.S. and M.Sdegrees in elec-tronic engineeringfrom Kyung-HeeUniversity, Korea,in 1995 and 1997,

respectively. He worked at Korea Elec-tronics Technology Institute (KETI),Kyunggi, Korea from 1997 to 2003,where he worked on organic transistoron plastic substrate and plastic flatpanel display. In 2003, he joined thePennsylvania state university and nowis working toward Ph.D. degree. Hiscurrent research interests have cen-tered on the field of the semiconductordevices, thin-film processing technolo-gy, and fabrication of flat panel dis-plays such as flexible display. He isnow researching in the field of solutionprocessed organic thin-film transistorsand circuits on various substrates.

BO BAIis currently aPh.D. student inthe Departmentof Electrical Engi-neering, PennState University.His thesis topic ison metal to

organic semiconductor contacts.He has also been involved in vari-eties of research works during theschool years, such as a-Si:H activematrix thin-film transistor (TFTs)array for x-ray imaging system onrigid and flexible substrate, pen-tacene TFT driven organic LED dis-plays, organic sensor arrays onfexible substrate.

JIE SUNreceived the B.S.from Nankai Uni-versity, P.R. Chi-na in 1996. Hehas worked as acustomer servicerepresentative inMotorola, GITUP

(China) Co. Ltd, and as a seniorprocess engineer in Vishay Gener-al Semiconductor (China), Co. Ltd,from 1996 to 2000. He received hisM.S. in Electr ical EngineeringDepartment, University of SouthCarolina, in 2003. He is now cur-rent ly a Ph.D. student in theDepartment of Electrical Engineer-ing, Pennsylvania State University.His research interest is focused onthin film electronics and semicon-ductor fabrications.

SHENG-CHUWUwas born inTaipei, Taiwan in1979. He receivedthe B.S. and M.S.degree fromNational Tsing-Hwa University,

Hsinchu, Taiwan and the Pennsyl-vania State University-UniversityPark in 2001 and 2005 respectively,all in electrical engineering. HisM.S. work focused on AMOLED dis-play on f lexible substrate andOLED encapsulation.

He is now working as a seniorengineer in Sitronix Technology,Taipei, Taiwan on the driving cir-cuit design for various displaytechnology.

THOMAS N.JACKSONis the Robert E.Kirby Chair Pro-fessor of Electri-cal Engineeringat Penn StateUnivers i ty . Dr .J a c k s o n ’ s

research focuses on exploratoryelectronic devices and microfabri-cation techniques. Dr. Jackson isa Fellow of the Institute of Electri-cal and Electronic Engineers, anda member of the American Vacu-um Society, the ElectrochemicalSociety, the Materials Society,and the Society for InformationDisplay.


2005 George E. Smith Award2005 George E. Smith Award

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SHELBY F.NELSONhas been aResearch Scien-t ist in the Dis-play Science andTechnology Cen-ter in the East-man Kodak

Research Laboratory since 2001.Her career has included employ-ment at Xerox Corporation, IBM’sWatson Research Center, AT&TBell Labs, and as a tenured profes-sor of physics at Colby College.

DIANE C.FREEMANhas been aResearch Scientistin the Display Sci-ence and Technol-ogy Center in theEastman KodakResearch Labo-

ratory since 2001. She received

her Ph.D. in Nuclear Physics at theUniversity of Rochester in 1997.She gained expertise in imageanalysis and inkjet technologybefore specializing in plastic elec-tronics in 2001.

YONGTAEKHONGwas born inBusan, SouthKorea, in 1971.He received B.S.and M.S. in elec-tronics engineer-ing, from Seoul

National University, Seoul, SouthKorea, in 1994 and 1996, and Ph.D. inElectrical Engineering from Universi-ty of Michigan, Ann Arbor, Michigan,USA, in 2003. Based on his Ph.Dresearch regarding a-Si:H TFT active-matrix polymer light-emitting dis-plays, he authored and co-authoredin more than 20 journal papers andconference presentations.

He has been an assistant profes-sor at School of EECS, SeoulNational University, Seoul, Korea,since 2006. From 2003 to 2006, hewas a senior research scientist atDisplay Science & TechnologyCenter, Eastman Kodak Company,Rochester, New York, USA. Hisresearch interests are thin-filmelectronic devices, and low-costback plane technologies for robust,flexible flat panel displays and dig-ital radiography sensor arrays.

Dr. Hong received Korea Founda-tion for Advanced Studies Scholar-ship from 1997 to 2002 and Collegeof Engineering Graduate StudentDistinguished Achievement Awardsfrom University of Michigan in2003. He is a member of SID.

Renuka P. JindalEDS Vice-President of Publications

University of Louisiana at Lafayette

Lafayette, LA, USA


Four EDS members won 2006 IEEEMedals. James D. Meindl won theIEEE Medal of Honor and HideoSunami, Mitsumasa Koyanagi, andKiyoo Itoh won the IEEE Jun-ichiNishizawa Medal.

IEEE Medal of Honor“For pioneeringcontributions tomicroelectron-ics, includinglow power, bio-medical, physi-cal l imits andon-chip intercon-nect networks”

During hiscareer as a scien-

tist, educator and high-level tech-nology executive, Dr. James D.Meindl, Director and Pettit ChairProfessor of the Joseph M. PettitMicroelectronic Research Center atGeorgia Institute of Technology inAtlanta, has logged a string ofexceptional accomplishments.

Early in his career, Dr. Meindl

developed micropower integratedcircuits for portable military equip-ment at the U.S. Army ElectronicsLaboratory in Fort Monmouth, NewJersey. He then joined Stanford Uni-versity in Palo Alto, California,where he developed low-power inte-grated circuits and sensors for aportable electronic reading aid forthe blind, miniature wireless radiotelemetry systems for biomedicalresearch, and non-invasive ultrason-ic imaging and blood-flow measure-ment systems. Dr. Meindl was thefounding director of the IntegratedCircuits Laboratory and a foundingco-director of the Center for Integrat-ed Systems at Stanford. The latterwas a model for university andindustry cooperative research inmicroelectronics.

From 1986 to 1993, Dr. Meindlwas senior vice president for acade-mic affairs and provost of Rensse-laer Polytechnic Institute in Troy,New York. In this role he wasresponsible for all teaching andresearch.

He joined Georgia Tech in 1993as director of its MicroelectronicResearch Center. In 1998, he becamethe founding director of the Inter-connect Focus Center, where he leda team of more than 60 facultymembers from MIT, Stanford, Rens-selaer, SUNY Albany, and GeorgiaTech in a partnership with industryand government. His research atGeorgia Tech includes exploring dif-ferent solutions for solving intercon-nectivity problems that arise fromtrying to interconnect billions oftransistors within a tiny chip.

Over his career, Dr. Meindl hassupervised over 80 Ph.D. graduatesat Stanford University, RensselaerPolytechnic Institute and GeorgiaTech, who have gone on to have aprofound impact on the semicon-ductor industry.

An IEEE Life Fellow, Dr. Meindl isthe recipient of the Benjamin GarverLamme Medal of the AmericanAssociation for Engineering Educa-tion, the J.J. Ebers Award of theIEEE Electron Devices Society, the

James D. Meindl

Four EDS Members Were The Recipients of

Prestigious 2006 IEEE Medals

Four EDS Members Were The Recipients of

Prestigious 2006 IEEE Medals

13eds04.qxd 9/15/06 1:13 PM Page 16


IEEE Education Medal and the IEEESolid State Circuits Award.

IEEE Jun-ichi Nishizawa Medal“For pioneering contributions todynamic random access memory(DRAM) cell structures and architecture”

Hideo Sunami, Mitsumasa Koy-anagi and Kiyoo Itoh are responsi-ble for three of the major milestonesin the evolution of modern dynamicrandom access memories (DRAMs).Their development of trench andstacked capacitor cells and foldeddata line cells resulted in unmatchedhigh signal-to-noise ratio. Today,three decades after their invention,these cells remain the de facto stan-dard for the DRAM industry.

Dr. Sunami was,in 1975, clearlyahead of his timewhen he inventedthe trench capaci-tor cell while the4Kb DRAM wasstill the industrystandard. Thiscapacitor ultimate-ly drove the devel-

opment of dry etching, defect controland inspection associated with high-aspect ratio trenches. Today, thetrench capacitor cell is used widely incommodity DRAM products andembedded applications. The conceptalso includes present cylindrical stackcapacitor cells. He is currently a pro-

fessor at the Research Center for Nan-odevices and Systems, HiroshimaUniversity in Hiroshima, Japan.

An IEEE Fellow, Dr. Sunami is therecipient of the IEEE Cledo BrunettiAward, the IEEE Electron DevicesSociety (EDS) Paul Rappaport Awardand the Tokyo Governor’s Award -Distinguished Inventor.

Dr. Koyanagi, in1976, devised thestacked capacitycell, the dominantDRAM cell sincethe 1-Mb genera-tion came intobeing. His workhas stimulatedresearch anddevelopment on a

variety of stacked capacitor cell struc-tures, capacitor insulators and capaci-tor electrode structures, includingthose using hemispherical grain, high-k material and metal/insulator/metal.His work has also been successfullyapplied to other memory devices withthree-dimensional stacked structures,such as ferroelectric RAM (FRAM). Heis currently a professor in the Depart-ment of Bioengineering and Robotics,Tohoku University in Sendai, Japan.

An IEEE Fellow, Dr. Koyanagi is therecipient of the IEEE Cledo BrunettiAward, SSDM Award of the Interna-tional Conference on Solid-StateDevices and Materials, Commenda-tion by the Ministry of Education, Cul-ture, Sports, Science and Technology

- Person of science and technologicalmerits (Japan), and the OkochiMemorial Technology Prize.

Dr. Itoh, in 1974,conceived theconcept of thefolded data-linecell, which uses apair of balanceddata lines to elimi-nate various noisec o m p o n e n t s .Since that time,this cell has been

adopted for nearly all DRAM chipssince produced. A Fellow at Hitachi,Ltd. in Tokyo, where he is responsi-ble for all research and development,he has also developed key DRAMdevices and circuits such as thetriple-well structure, on-chip voltagedown-converters and subthreshold-current reduction circuits.

An IEEE Fellow, Dr. Itoh hasreceived the IEEE Solid State CircuitsAward, the EDS Paul RappaportAward, Commendation by the Minis-ter of State for Science and Technol-ogy - Person of science andtechnological merits (Japan), theNational Invention Award - Prize ofthe Patent Attorney’s Association ofJapan,?and the national Medal ofHonor with Purple Ribbon (Japan).

Alfred U. Mac RaeEDS Vice-President of Awards

Mac Rae TechnologiesBerkeley Heights, NJ, USA

William L. AhlgrenBabak AmirParvizChagaan Baatar*Marian Bartek*Gianluca BoselliShoumian Chen*Cornelis H. de Groot

Ravi DroopadSandeep L. D�SouzaHeather M.B. DussaultJinjun FengSteven K. GroothuisHorst E. GrueningThomas M. Hall*

Akira InoueMarwan H. Khater*Keunwoo Kim*Gerhard Knoblinger*Mayuresh V. KothareOleh B. Krutko*Ravindar M. Lall

Wen-Chin LeeFelix LustenbergerBhaskar L. Mantha*Wisik Min*Mireille MouisJames Olson*Radivoje S. Popovic

Li QianReza SharifiJames Henry StathisArmin TilkeAlastair David Trigg*Khodadad VarahramyanRajah V. Vysyaraju

Eui-Hyeok YangAli Zojaji*Yun Zou*

* = Individual designated EDS as nominating entityIf you have been in professional practice for 10 years, you may be eligible for Senior Membership, the highest grade of

membership for which an individual can apply. New senior members receive a wood and bronze plaque and a credit cer-tificate for up to US $25 for a new IEEE society membership. Upon request, a letter will be sent to employers, recognizingthis new status.

For more information on senior member status, visit http://www.ieee.org/membership/grades_cats.html#SENIORMEM.To apply for senior member status, fill out an application at http://www.ieee.org/organizations/rab/md/smelev.htm.

Congratulations to the EDS Members

Recently Elected to IEEE Senior Member Grade!

Congratulations to the EDS Members

Recently Elected to IEEE Senior Member Grade!

Hideo Sunami

Kiyoo Itoh

Mitsumasa Koyanagi

13eds04.qxd 9/15/06 1:13 PM Page 17


At the December 2005 EDS Administrative Committee Meeting, EDS approved a Masters level StudentFellowship Program.

Description: One-year fellowships awarded to promote, recognize, and support graduate Masters level studyand research within the Electron Devices Society’s field of interest: elemental and compound semiconductordevices, organic and other merging materials based devices, quantum effect devices, optical devices, displaysand imaging devices, photovoltaics, solid-state sensors and actuators, solid-state power devices, high frequencydevices, micromechanics, tubes and other vacuum devices. Five fellowships will be awarded, with at least onefellowship being given to students in each of the following geographical regions every year: Americas,Europe/Mid-East/Africa, Asia & Pacific. Only one candidate can win per educational institution.

Prize: US$2,000 and a certificate to the student, to be presented by the Dean or Department head of the student’senrolled graduate program.

Eligibility: Candidate must: be an IEEE EDS student member at the time of nomination; be accepted into a grad-uate program or within the first year of study in a graduate program in an EDS field of interest on a full-timebasis; and continue his/her studies at a graduate education institution. Nominator must be an IEEE EDS memberand preferably be serving as the candidate’s mentor or faculty advisor. Previous award winners are ineligible.

Basis for Judging: Demonstration of his/her significant ability to perform research in the fields of electrondevices and proven history of academic excellence in engineering and/or physics as well as involved in under-graduate research and/or supervised project.

Nomination Package:• Nominating letter by an EDS member who served as candidate’s mentor or faculty advisor.• Two-page (maximum) statement by the student describing his or her education and research interests and

accomplishments• One-page biographical sketch of the student (including student’s mailing address and e-mail address)• One copy of the student’s transcripts/grades• A letter of recommendation from an individual familiar with the student’s research and educational creden-

tials. Letters of recommendation cannot be from the nominator.

Timetable:• Nomination packages are due at the EDS Executive Office no later than March 15, 2007• Recipients will be notified by May 1, 2007• Monetary awards will be presented by the Dean or Department Chair of the recipient’s graduate program at

the beginning of the next academic term.• Nomination packages can be submitted by mail, fax or e-mail, but a hard copy must be received at the EDS Office.

Send completed package to:IEEE Operations CenterEDS Executive OfficeEDS Masters Student Fellowship Program 445 Hoes Lane, Piscataway, NJ 08854 USA

For more information contact:[email protected] visit: http://www.ieee.org/society/eds/education/fellowship.xml

NEW EDS STUDENT FELLOWSHIP PROGRAM –

MASTERS LEVEL!2007 IEEE EDS MASTERS STUDENT FELLOWSHIP CALL FOR NOMINATIONS

NEW EDS STUDENT FELLOWSHIP PROGRAM –

MASTERS LEVEL!2007 IEEE EDS MASTERS STUDENT FELLOWSHIP CALL FOR NOMINATIONS

13eds04.qxd 9/15/06 1:13 PM Page 18

The 2006 EDS Region 8 ChaptersMeeting was held at the Hotel RoyalContinental, Naples, Italy, on Satur-day, June 3, in conjunction with aseries of EDS meetings including theEDS Administrative Committee(AdCom) Meeting. The meeting gath-ered about 35 people in total, with avery high chapter representation - 22chapters from the entire Region 8area. The previous EDS Region 8Chapters Meeting was held two yearsago in Madrid, Spain.

The meeting was hosted andopened with a welcome to the partici-pants by Professor Mikael Östling,Chair of the Sub-Committee forRegional Chapters in Europe, Africaand the Middle East (SRC-EAM). Pro-fessor Cor Claeys, EDS President-Electand also Regions/Chapters Vice-Presi-dent, gave an overview of the Region-al Chapter Coordination Program.

Mikael then presented the detailed

plan for the activities and also pro-posed the appointment of an addi-tional SRC-EAM Vice-Chair, ProfessorJan Vobecky, from the Microelectron-ics Department FEE-CTU, in Prague.With Region 8 being by far the

largest geographical region of theIEEE EDS, it has clearly been seenthat we need an additional vice-chair.EDS has 39 chapters in Region 8 andthere are plans for new student chap-ters in the future.

This year’s meeting included 12excellent chapter presentations.

The first chapter presentation wasgiven by Dr. Margarita F. Sitnikova,regarding the joint MTT/ED/AP ST.Petersburg Chapter activities. Shetalked about the 9th All-Russia stu-dent conference in Radiophysics,Peterhoff, December, 2005, having 26oral presentations by graduate stu-dents. The chapter also hosted a DLpresentation by Prof. Vijay K. Arora,”Quantum Engineering of Nanoelec-tronic Devices”.

In April this year they arranged aseminar “Modern Problems ofMicrowave Engineering and Electron-ics”, in St. Petersburg


Professor Albert Wang of the IllinoisInstitute of Technology and Vice Presi-dent of Membership for the ElectronDevices Society, visited the ED GreeceChapter in Athens and delivered a DLseminar at the National Technical Uni-versity of Athens (NTUA) on May 19,2006. Prof. Wang was hosted by the

Greece ED Chapter Chair, Prof. JohnXanthakis of the National TechnicalUniversity of Athens. Prof. Wang’s DLtalk, entitled “Advanced ESD Protec-tion Design for RF ICs”, was wellreceived by the audience of about fifty,despite the “bad luck” that the univer-sity was almost shut down on that daydue to a mass student protest event oncampus demanding quality education(like this IEEE DL lecture? Maybe?).Prior to the DL seminar, Prof. Wangheld a meeting with the chapter offi-cers including Prof. Michael Theolo-gou, Prof. Nick Hatziargyriou, Chairof IEEE Greece Section, and Prof.Nick Theodorou, Chairman of theDepartment of Electrical and Com-puter Engineering at NTUA, to dis-cuss various concerns related tolocal IEEE and ED chapter activities.A general discussion session with

the audience followed the DL semi-nar where the group discussed manyED related issues, such as, IEEEmembership fees and transition ofstudent membership into regular EDmembership upon graduation, etc.

- by Albert Wang

EDS Distinguished Lecturer Visits

the ED Greece Chapter

2006 EDS Region 8 Chapters

Meeting Summary

(from right) Prof. Michael Theologou, Prof. JohnXanthakis, Prof. Albert Wang and Prof. Nick

Theodorou The DL seminar scene

EDS Distinguished Lecturer Visits

the ED Greece Chapter

2006 EDS Region 8 Chapters

Meeting Summary

Prof. Andrzej Napieralski, Chapter Chair EDPoland, Josep Pallares, ED Spain Chapter Chairand Nikos Konofaos, ED/MTT Greece Chapterrepresentative, enjoying a coffee break at the

EDS Region 8 Chapters Meeting

13eds04.qxd 9/15/06 1:14 PM Page 19

Dr. Nikita Ryskin presentedthe MTT/ED/AP/CPMT Saratov-Penza Chapter report. Duringthe past period the chapter hostedan annual symposium on “Elec-tromagnetics of Microwaves, Sub-mill imeter and Optical Waves”with more than 40 participants.Several other workshops wereheld and Prof. Arora also gave aDL for the chapter.

Dr. Yuri Poplavko presentedfor the jo int chapter MTT/ED/CPMT/SSC/COM CentralUkraine. His presentation men-tioned many technical activitiesincluding the annual conferenceCriMiCo-2005, that had 240 reportsfrom 17 countries. This particularconference has also supported some

selected young scientists economi-cally. He also alluded to the practicalproblems existing in the post-sovietrepublics, such as getting a Visa,very low annual incomes, etc. Heurged the IEEE to continue its valu-able support to young engineers.

The MTT/ED/AP/CPMT Bul-garia-Sofia report was presentedby Dr. Katya Asparuhova. Thischapter is the oldest chapter inBulgaria, founded in 1995 and hasestabl ished col laboration withnational societies. Also, here theproblems with low average(200¤/month) income is apparent.

Dr. Arttu Luukanen is the newchapter chair of the MTT/AP/EDFinland Chapter and he gave agood account for the activities ofthe 100 members’ strong chapter.They have focused on Terahertztechnology as well as MEMS.

The MTT/ED/AP LithuanianChapter report was presented byDr. Sandra Pralgauskaite, whoshowed a very impressive list ofactivities. This chapter is 11 yearsold and based in Vilnius. They alsohave a student branch, with about25 members. Over the past year, 10technical meetings and 3 interna-tional workshops were organized.

We also heard Prof . GadyGolan present ing for the EDIsrael Chapter and Prof. Ali

Rezazadeh for the joint chapterAP/ED/LEO/MTT United King-dom & Republic of Ireland .Both chapters have very estab-l ished act iv i t ies and are wel lknown to the EDS community.

Prof. Salvatore Bellone pre-sented a report for the ED Central& Southern Italy Chapter andshowed very good progress on theactivation of the student branch inSalerno with 12 new members, bypromoting a one week stage forstudents at MICRON in Avezzano.

The joint chapter AP/ED/MTTNorthern Italy report was pre-sented by Prof . GiovanniGhione. The chapter is based inTorino since its start in 1988. Sev-eral restructuring events havebeen done and today the ED mem-bership is very small. The chapteris analyzing the situation and willsuggest some action points.

The final presentation was giv-en by Dr. Josep Pallares, Chairof the ED Spain Chapter . TheChapter now has 30 members and5 student members. The mainfocus has been on a nanoelectron-ics and photonics systems work-shops and several DL talks, aswell as co-arranging the SpanishIEEE chapter chairs meeting.

In all, comparing with the previ-ous meeting in Madrid all chaptersshowed good progress and techni-cal activities have been intensified.

An open forum discussion wasled by Mikael and covered severalimportant issues l ike meet ingforms and frequency, relation withthe region and activation of EDmembers. One issue that intensi-fied the discussion was how tobring more value to EDS mem-bers. The discussion was veryconstructive. The meeting finishedwith an excellent buffet dinner,hosted by EDS. In summary, theEDS Region 8 Chapters Meetingwas much appreciated and it wasconsidered to be a very importantforum for EDS activities.

Mikael OstlingChair, SRC-EAM

KTH, Royal Institute of TechnologyKista, Sweden


Dr. Margarita F. Sitnikova presenting for the jointMTT/ED/AP ST. Petersburg Chapter

Attendees of the EDS Region 8 Chapters Meeting, held June 3, 2006

13eds04.qxd 9/15/06 1:14 PM Page 20


This is a reminder for EDS members to vote in the 2006 IEEE Election for the following positions and candidates.Listed below are the positions and candidates that will appear on the 2006 IEEE Annual Election ballot.

Position Candidates

IEEE President-Elect, 2007 Lewis Terman (Nominated by IEEE Board of Directors)John Vig (Nominated by IEEE Board of Directors)

Division I Delegate- Giovanni (Nanni) De Micheli (Nominated by Division I)Elect/Director-Elect, 2007 Richard C. Jaeger (Nominated by Division I)

Region 2 Delegate- Amarjeet S. Basra (Nominated by Region 2)Elect/Director-Elect, 2007-2008 William P. Walsh, Jr. (Nominated by Region 2)

Region 4 Delegate- Don C. Bramlett (Nominated by Region 4)Elect/Director-Elect, 2007-2008 S. Hossein Mousavinezhad (Nominated by Region 4)

Region 6 Delegate- Leonard J. Bond (Nominated by Region 6)Elect/Director-Elect, 2007-2008 S.K. Ramesh (Nominated by Region 6)

Region 10 Delegate- Y.W. Liu (Nominated by Region 10)Elect/Director-Elect, 2007-2008 R. Muralidharan (Nominated by Region 10)

Yong Jin Park (Nominated by Region 10)

Standards Association Board of H. Landis (Lanny) Floyd, II (Nominated byGovernors Member-at-Large, Standards Association) 2007-2008 Richard H. Hulett (Nominated by Standards Association)

Standards Association Board of Dennis B. Brophy (Nominated by Standards Association)Governors Member-at-Large, Paul Nikolich (Nominated by Standards Association)2007-2008

Technical Activities Jose R. (Roberto) Boisson de Marca (Nominated byVice President-Elect, 2007 Technical Activities)

Harold L. Flescher (Nominated by Technical Activities)Robert (Bob) C. Rassa (Nominated by Technical Activities)

IEEE-USA President-Elect, 2007 Russell J. Lefevre (Nominated by IEEE-USA)Joseph V. Lillie (Nominated by IEEE-USA)

IEEE-USA Member-at-Large, Gary L. Blank (Nominated by IEEE-USA)2007-2008 Gregg L. Vaughn (Nominated by IEEE-USA)

IEEE Election -Did You Vote Yet?

Petition CandidatesThere are no petition candidates for any elective position in the 2006 IEEE Annual Election.

Ballots are mailed to all eligible voting members by 1 September and must be returned before 12:00 noon on 1November. For more information concerning the election (including biographies), please visit the IEEE website athttp://www.ieee.org/elections.

IEEE Election -Did You Vote Yet?

13eds04.qxd 9/15/06 1:14 PM Page 21

The EDS Membership Fee SubsidyProgram (MFSP) is a chapter pro-gram that enables chapters in lowincome geographical areas toincrease their membership. This pro-gram is also used to help launch newIEEE EDS chapters. The MFSP guide-lines are as follows:

IEEE policy currently allows a 50%discount on IEEE dues and one societymembership for any individual whoseannual salary is less than US$11,900.This offering is referred to as the Mini-mum Income Special ConsiderationsOption. The Electron Devices Societycurrently has a program for its chap-ters called the Membership Fee Sub-sidy Program (MFSP), which bothcomplements the IEEE MinimumIncome offering and provides a signifi-cant additional benefit for qualifiedindividuals.

With the EDS Membership Fee Sub-sidy Program, EDS will pay 50% of theIEEE and EDS dues for any new/exist-ing member or student qualifying forthe Minimum Income option. EDS willcover up to twelve (12) chapter mem-bers/students per year. Eachmember/student can only be covered‘one time’ under this program and fourof the twelve members/students eachyear must be new IEEE/EDS mem-bers/students. The individuals can beapplying for either regular membershipor student membership. This programis also available to all unemployedmembers. Although the IEEE MinimumIncome option allows individuals topurchase publication subscriptions forone society at a 50% reduced rate, theEDS MFSP does not cover the paymentof publication subscriptions.

If a chapter has individuals who

qualify for the reduced IEEE MinimumIncome offering and the EDS MFSP, allthe Chapter Chair needs to do is obtainthe IEEE/EDS membership applicationforms or IEEE Renewal Bills from allindividuals participating in the program(maximum 12) and submit them toLaura Riello of the EDS ExecutiveOffice, for processing. Once received,the application forms will be codedwith a special account number andsubmitted to the pertinent IEEE depart-ment for processing.

For any questions concerning theprogram, please contact Laura Riel-lo ([email protected]) of the EDSExecutive Office.

Albert WangEDS Membership Vice President

Illinois Institute of TechnologyChicago, IL, USA

EDS Membership Fee Subsidy Program (MFSP)EDS Membership Fee Subsidy Program (MFSP)

An IEEE Student Branch gives studentsthe opportunity to meet and learnfrom fellow students, as well as facultymembers and professionals in thefield. A good IEEE Student Branch canbe one of the most positive elementsin an Electrical Engineering, ComputerEngineering or Engineering Technolo-gy department. IEEE Student Branchesare established at over 1,000 universi-ties and colleges throughout theworld. Student Branch activities offernumerous educational, technical, andprofessional advantages of IEEE mem-bership through special projects, activ-ities, meetings, tours and field trips.

Establishing an IEEE Student Branchrequires the signatures of 20 IEEE Stu-dent members on a petition. The peti-tion must specify the name of theBranch, and the names of the InterimStudent Chair and faculty member whowill serve as Counselor of the Branch.The petition must also be approved bythe Department Chair and two facultymembers, who are also IEEE membersabove student grade. Submit the peti-tion to IEEE Student Services to beginthe approval process, which includesverification of the IEEE membership ofthe students and the faculty memberson the petition, review of the programsoffered at the educational institution,

review and approval by the IEEERegional Director, the Regional Stu-dent Activities Committee Chair andthe IEEE Regional Activities Board(RAB). If further information isrequired, please contact: IEEE StudentServices, Phone +1 732 562 5527/5392,Fax +1 732 463 3657 or e-mail: [email protected]

Once a university/college has estab-lished an IEEE Student Branch, an affili-ation can be made with one or more ofIEEE’s technical societies to form a Stu-dent Branch ‘Chapter’. There are cur-rently over 300 IEEE Student BranchChapters, with the Electron DevicesSociety having 10 at various institu-tions in a number of regions. Therequirements for the establishment ofan IEEE Student Branch Chapter forEDS are as follows:

• A petition by not less than twelve(12) Student Branch members,who are members of the IEEEtechnical Society, must be sub-mitted to Laura Riello of the EDSExecutive Office at 445 HoesLane, Piscataway, NJ 08854 USAor via fax at 732-235-1626.

• The petition must specify thename of the Student Branch, thename of the technical Societywith which the Student Branch

Chapter will be affiliated, thename of the interim BranchChapter Chair and the name ofthe faculty Advisor, who must bea member of IEEE and the techni-cal Society above student grade.

• After the Advisor and the IEEEStudent Branch Executive Com-mittee have approved the peti-tion, it should be sent to the EDSExecutive Office.

• Upon receipt of the petition, theEDS Office will forward it to IEEEStudent Services to verify theIEEE and technical Society mem-bership of individuals whosigned the petition. If the petitionis in order, Student Services staffwill take the necessary action toobtain formal approval of thepetition by the Society President,the Regional Director and theRegional Student Activities Com-mittee Chair. Student Servicesstaff will acknowledge receipt ofthe petition and will keep the fac-ulty advisor informed of the sta-tus of the request.

EDS welcomes the formation ofnew Student Branch Chapters and welook forward to hearing from you. Ifyou have any further questions, pleasecontact Laura Riello ([email protected]).

How to Form an IEEE Student Branch and Student Branch Chapter

How to Form an IEEE Student Branch and Student Branch Chapter

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As an IEEE andEDS member, youhave FREE on-lineaccess to the fullarticles of the fol-lowing publica-tions: • E l e c t r o n

Device Letters(All Issues From1980 throughcurrent)

• Transactions on ElectronDevices (All Issues From 1954through current)

• International Electron DevicesMeeting (All Digests From 1955through current)

• EDS Newsletter• Journal of Lightwave Technology

The publications can be viewedthrough the on-line delivery system,IEEE Xplore, which provides IEEEmembers with the followingbenefits/capabilities:• Online access to their IEEE personal

subscriptions• Full-text PDF image files for content,

including all original charts, graph-ics, diagrams, photographs andillustrative material, from an inte-grated-circuit schematic to a topo-graphic map to a photograph of anew crystalline structure

• Full-text search allows you to searchmetadata fields and the associatedfull-text journal/transaction

• Links to references and cross link-ing between EDS publications andother IEEE publications is availablein articles

• CrossRef search offers outboundlinks to publications by other lead-ing publishers, employing thegoogle search engine

• Online available prior to the printequivalent

• Free and unlimited access toabstract/citation records

• Unlimited printing of bibliographicrecords and full-text documents

• Includes cover to cover material(starting in 2004) i.e., letters to edi-tor, editorial boards, call for papers

In addition to the above benefits, EDSmembers can also subscribe to a com-

bined paper and on-line subscription toTransactions on Device and MaterialsReliability, Transactions on Semicon-ductor Manufacturing and the Journalof Microelectromechanical Systems.Other publications offered by EDS thathave an electronic version available foran additional cost include; Transactionson Applied Superconductivity, Journalof Display Technology, Journal of Elec-tronic Materials, Transactions on Nan-otechnology, and the Sensors Journal.

To use the Xplore system, you mustestablish an IEEE Web Account. Thisaccount is also used for renewing yourIEEE membership online. If you needto establish an IEEE Web Account,please visit www.ieee.org/web/accounts/. IEEE members can go to theXplore site through the URL www.iee-explore. ieee.org. We encourage allmembers of the Society to use thisdynamic system.


Lafayette, LA, USA.

The 2005 Annual DVD update packageis now ready for distribution. It includesall issues from 2004 through 2005 ofElectron Device Letters (EDL) andTransactions on Electron Devices (T-ED), as well as the proceedings of theInternational Electron Devices Meeting(IEDM) over the same period. Thisupdate is fully compatible with the EDSArchival Collection DVD and the twoproducts work together seamlesslyproviding extensive search capabilitiesto all issues of EDL, T-ED and all techni-cal digests of the IEDM. The DVDsinclude comprehensive author, subjectand publications indices, abstractpages and all articles are in searchablePDF format.

The 2005 EDS DVD Update Pack-age is available exclusively to EDSmembers for a bargain price of US$30(students $15) through the IEEE onlineStore http://shop.ieee.org/store/ or

using a downloadable order formfrom the EDS web-site at. http://www.ieee.org/portal/pages/society/eds/pubs/pubs.html.

You can request the 2006 EDS DVDUpdate Package in advance as a sub-scription via your 2007 IEEE Member-ship renewal bill when you receive itthis Fall. The 2006 EDS DVD Packagewill be available at the latest by June2007. Once you sign-up to receive the2006 package via your member renew-al bill, you will automatically be billedeach year for subsequent versions ofthe package.

For those interested, the EDSArchival Collection is still in stock andavailable solely to EDS members forUS$30 ($9.95 students) through theIEEE online store at http://shop.ieee.org/store/. This archival collectionincludes all issues of Transactions onElectron Devices (1954-August 2004),

Electron Device Letters (1980-August2004), and all the technical digests ofthe International Electron DevicesMeeting (IEDM) (1955-2004).

These products are being madeavailable to our members in the spir-it of providing technical informationat a most affordable price possible.Hand-in-hand with this goes the con-cept of individual ownership. Wehope that you will adhere to this con-cept and encourage others interestedin using them to acquire their owncopy. If you are currently not an EDSmember, we encourage you tobecome one to avail of these excep-tional products designed to empow-er our members.


Lafayette, LA, USA

On-Line Access to IEEE Journals Available to EDS Members

ANNUAL DVD UPDATE PACKAGEAVAILABLE TO EDS MEMBERS

Renuka P. Jindal

On-Line Access to IEEE Journals Available to EDS Members

ANNUAL DVD UPDATE PACKAGEAVAILABLE TO EDS MEMBERS

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Regional and Chapter NewsRegional and Chapter News

ED/CPMT Orlando- Ravi TodiThe ED/CPMT Chapter of Orlandoco-sponsored the 2006 Joint Sym-posium of the Florida Chapter ofthe American Vacuum Society withthe Florida Society for Microscopy,March 12-16, 2006, at the Universi-ty of Central Florida (UCF) inOrlando. The symposium featuredabout 65 posters and 40invited/contributed oral presenta-tions from students and profes-sionals across Florida. Cash prizeswere awarded to 9 graduate and 3undergraduate students in differ-ent categories as part of the poster

competition. A student mixer wasorganized on March 12, Sundayevening, providing an opportunityfor the student to interact with fel-low students from universit iesacross Florida. Several shortcourses on vacuum science andtechnology were offered byexperts in the field in conjunctionwith the technical program. Inaddition to this, a special high andmiddle school teacher workshopwas organized on Monday, March13, to provide hands on educationabout microelectronics andmicroscopy.

With the IEEE UCF StudentBranch and the IEEE Orlando Sec-tion, ED/CPMT Chapter organizeda summer picnic on May 20, 2006,at Lake Mills Park, Orlando, FL.The event was a great successwith over 70 participants. Stu-dents and members enjoyed the

great Florida summer with familyand friends.

In an effort to have industry par-ticipation, the ED/CPMT Chapterorganized the following invitedseminars with support from theSchool of Electrical Engineeringand Computer Science at UCF:• Dr. Donna Robinson-Hahn from

Fairchild Semiconductor pre-sented a talk on “ElectrostaticDischarge (ESD); Test Method-ologies & Control Techniques”on March 24, 2006.

• Dr. Sameer Pendharkar fromTexas Instruments Inc., present-ed a seminar on “Mixed Signaland Power IC Technology” onApril 7, 2006.

• Dr. Subramanian S. Iyer fromIBM Microelectronics Divisionpresented a talk on “BeyondScal ing - Real iz ing Valuethrough the Integration of Mem-ory and Autonomic Chip Fea-tures” on April 14, 2006.

• Dr. Richard W. Cernosek fromSandia National Laboratoriespresented an interesting talk on“Micro-Analytical Systems forNational Security Applications”on April 21, 2006.

• Dr. Ronghua Zhu from FreescaleSemiconductor, Inc., presented aseminar on “Smart Power IC Tech-nology: Status, Challenges andFuture Trends” on May 19, 2006.

~ Ibrahim Abdel-Motaleb, Editor

ICCDCS 2006- by Francisco J. García SánchezThe Sixth International CaribbeanConference on Devices, Circuitsand Systems (ICCDCS 2006), washeld in Playa del Carmen, Mexico,April 26-28, 2006. ICCDCS is anEDS and CASS, technically co-sponsored international confer-ence held biannually since its firstedition (Caracas, 1995) at differentlocations within the Caribbeanbasin. Over time this conferencehas acquired a prestigious positionas the outstanding internationalconference dealing with ElectronDevices and Circuits and Systems

Symposium poster session and evening student mixer at the University of Central Florida

The summer picnic at Lake Mills Park

USA, CANADA &LATIN AMERICA

(Regions 1-6, 7 & 9)

USA, CANADA &LATIN AMERICA

(Regions 1-6, 7 & 9)

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which takes place within the LatinAmerican Region. Its main objec-tive is to serve as a significantmeeting point and technical forumto initiate, renew and maintaindirect personal relations aimed atsharing relevant technical know-how among Latin American andrest-of-the-world professionalsinvolved in the disciplines that itcovers. Participants from Industry,universities and R&D institutionsattended 73 oral presentations byauthors from: Argentina, Austria,Brazil, Belgium, Canada, Chile, Chi-na, Colombia, France, Germany,Hong Kong, India, Japan, Mexico,Peru, Portugal, Puerto Rico, Spain,Taiwan, USA, and Venezuela.In addition to the regular papersessions, the conference featuredplenary keynote presentations byProf. Michael Shur, RensselaerPolytechnic Institute (“TerahertzElectronics and Photonics: Closingthe Gap”), Prof. Jamal Deen,McMaster University (“High Sensi-t ivi ty Detect ion of BiologicalSpecies via the Field Effect”), andDr. Shekhar Borkar, CorporateTechnology Group Director, Micro-processor Technology Lab, Intel(“VLSI Design Chal lenges forGigascale Integration.”

This edit ion of ICCDCS wasorganized by the Institute of Astro-physics, Optics and Electronics(Mexico), the University of the Illes

Balears (Spain) and Simón BolívarUniversity (Venezuela), with thesupport of Intel, Freescale Semi-conductor, and the Ibero AmericanScience & Technology EducationConsortium. The next edition ofthis conference will be held in Cos-ta Rica, Central America, on thefirst quarter of 2008. Its motiva-t ional theme wil l be “TheCaribbean looks at the Pacific.”

~ Jacobus W. Swart, Editor

ED/MTT/AP St. Petersburg- by Margarita F. SitnikovaActivities of the ED/MTT/AP St.Petersburg Chapter (IEEE RussiaNorthwest Section) are mainlydirected to organization and sup-port of student scientific activities,in particular involving the studentsto participate in scientific seminarsand conferences.

Our chapter membership is ris-ing steadily, with a total of 42members, including students.

Some important events techni-cally supported by our chapter willbe presented below.

Annual Student competition inproblem solving for junior stu-dents studying radio engineering

in St. Petersburg universities, April23, 2006 (meeting type - technicaland educational), was organizedby St. Petersburg State TechnicalUniversity and St. Petersburg StateElectrotechnical University. Over41 students (including 6 IEEE stu-dent members) from 4 universitiestook part in the competition.

An IEEE EDS Distinguished Lec-ture by Professor Vijay K. Arora,Division of Engineering, WilkesUniversity, was organized. Profes-sor Arora came to St. Petersburg,where he was welcomed by Pro-fessor Margarita Sitnikova. May21st was for rest and sightseeingas Professor Svetlana Zubko andstudent, Yuri Yamshikov, accompa-nied Professor Arora to variouspoints of interest in St. Petersburg.On May 22, 2006, Professor Aroragave a lecture on “Quantum Engi-neering of Nanoelectronic Devices,then he visited the museum of Pro-fessor Popov, who was an earlierpioneer in radio communicationsand the museum of the History ofSaint Petersburg State Electrotech-nical University (LETI). Six IEEEMembers and 18 guests visitedthis lecture.

The 12th International StudentSeminar on Microwave Applicationsof Novel Physical Phenomena, wasorganized in St. Petersburg, October17-19, 2005, by the St. PetersburgState Electrotechnical University.Over 185 participants presented 60oral papers (including 6 lecturers and21 IEEE members) from Italy, Spain,France, Germany, Great Britain, Swe-den, Ukraine and Russia. (SeminarWeb site http://www.mwlab.spb.ru/).The abstracts of all papers were pub-lished in the volume of Proceedingsof the 2005 student seminar. The firstseminar was held in 1994 atChalmers University of Technologyin the city of Goteborg (Sweden) andwas called the International StudentSeminar on High TemperatureSuperconductors at Microwaves. TheInternational Student Seminar hasalso been held in the following Euro-pean countries: Sweden (1994),France (1996), Germany (1997), GreatBritain (2000), twice in Finland (1999,2003), and five times in Russia(1995, 1998, 2001, 2002, 2004, 2005).

Participants of the Sixth International Caribbean Conference on Devices, Circuits and Systems,held in Playa del Carmen, Mexico

EUROPE, MIDDLEEAST & AFRICA

(REGION 8)

EUROPE, MIDDLEEAST & AFRICA

(REGION 8)

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The Annual International Semi-nar on mathematical methods inthe diffraction theory, ‘Days on Dif-fraction 2005’, was organized in St.Petersburg June 28 – July 1, 2005,by the Faculty of Physics at St.Petersburg State University, aswell as the St. Petersburg Branchof Steklov Mathematical Instituteand Euler International Mathemati-cal Institute. Over 136 participantspresented 118 oral papers, includ-ing 5 IEEE members and studentmembers. (Seminar Web sitehttp://math.nw.ru/DD) Abstracts ofall papers were published in thevolume of Proceedings.

The Seminar ‘Modern Problemsof Microwave Engineering andElectronic’ was held at St. Peters-burg Electrotechnical University(LETI) on April 18–19, 2006. TheSeminar is intended to present thelatest results and achievements inthe field of computational electro-dynamics and to discuss modernproblems existing in the field. Fif-teen IEEE members and 60 guestsparticipated in this seminar.

The 9th All-Russia Student Con-ference in Radiophysics, Peterhoff,December 6-7, 2005, was organizedby St. Petersburg State University.About 26 participants presented 26oral papers (including 5 IEEE mem-bers and student members) from 3universities in 2 cities of Russia(see Conference Web pagehttp://radio.stu.neva.ru/studconf.htm). Abstracts of all papers werepublished in the proceedings andpublicat ion of abstracts of thethree best paper award winners inIEEE Microwave Magazine.

Some interactive administrativemeetings were held on December5, 2005, December 16, 2005 andMay 11, 2006.

~ Alexander V. Gridchin, Editor

ED Israel- by Gady GolanOn Monday, April 24, 2006, Prof. Y.Nemirovsky, Israel Institute ofTechnology, Israel, delivered hisseminar on “The Fascinating Worldof MEMS” to around 90 attendeesat the Holon Institute of Technolo-gy (HIT) - Holon, Israel. The semi-nar was chaired by Prof. Gady

Golan (EDS Israel Chapter Chair). The talk covers the main micro-

machining technologies and pre-sents several illustrating examplesclassified by markets: Optics/Elec-tro-Optics; Uncooled IR Imagers;Inert ial Sensors; Displays; RFMEMS and BIOMEMS.

On Monday, May 22, 2006, Prof.David Mendelovic, School of Elec-trical Engineering, Tel-Aviv Univer-sity, Israel, presented his seminaron “From Computer GeneratedHolograms Towards Part ial lyCoherent Optical Signal Proces-sors” to around 90 audience atHIT. The seminar was chaired byProf. Gady Golan.

On Wednesday, June 21, 2006,Dr. Eli Gershon, Dept. of ElectricalEngineering, Holon Institute of

Technology, Israel, gave a talk on“Control and Estimation of State-Multiplicative Linear Systems” to40 audience at HIT. The sessionwas chaired by Prof. Gady Golan.

~ Zhirun Hu, Editor

2006 InternationalConference onMicroelectronics (MIEL)- by Ninoslav StojadinovicThe 25th International Conferenceon Microelectronics (MIEL 2006)was held 14-17 May 2006, in the“Park” Hotel, Belgrade, Serbia.The conference was organized bythe IEEE ED/SSC Serbia and Mon-tenegro Chapter in cooperationwith the Faculty of Electronic Engi-neering (University of Nis), Ei-Holding Co. , and the Nat ional

Professor Ninoslav Stojadinovic addressing the audience at MIEL 2006 Opening Session

Some of MIEL 2006 distinguished attendees. From left: Prof. Cor Claeys, his wife Mrs. RitaRooyackers, Prof. Ninoslav Stojadinovic, Prof. Magali Estrada, and Prof. Antonio Cerdeira

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Society for ETRAN, under co-spon-sorship of the IEEE ElectronDevices Society, with cooperationfrom the IEEE Solid-State CircuitsSociety, and under auspices of theSerbian Ministry of Science andEnvironment Protection, SerbianAcademy of Science and Arts ,Academy of Engineering Sciencesof Serbia and Montenegro, andCity Assembly of Nis.

The Workshop on Nanotech-nologies, held on 14 May, attract-ed a lot of interest and was anexcellent introduction to the maintechnical program, which consist-ed of nine sessions: PowerDevices and ICs, Nanotechnolo-gies, Microsystem Technologies,Opto and Microwave Devices,Processes and Technologies,Physics and Modeling, Modelingand Simulat ion, Rel iabi l i tyPhysics, and Circuit and SystemDesign. The attendees, 42 domes-tic and 88 foreign, came from 32different countries. The total of 23keynote invited papers and 118regular contributions (70 in oralsessions and 48 posters) were pre-sented. The conference proceed-ings (two volumes, 753 pages)were published through the IEEEConference Publications Program.

The keynote invited speakerswere: V. Arora (Wilkes University,USA), E. Atanassova (BulgarianAcademy of Sciences, Bulgaria), K.Arshak (University of Limerick, Ire-land), C. Claeys (IMEC, Belgium),Z. Djuri (IHTM-CMTM, Serbia), M.Estrada (CINVESTAV-IPN, Mexico),D. Fleetwood (Vanderbilt Universi-ty, USA), G. Ghibaudo ( IMEPENSERG, France), P. Hurley (Tyn-

dal l Inst i tute, I reland), K. I toh(Hitachi Ltd. , Japan), J. Kuo(National Taiwan University, Tai-wan), P.A. Mawby (University ofWarwick, UK), S. Mijalkovic (DelftUniversity of Technology, TheNetherlands), A. Nakagawa (Toshi-ba Co., Japan), M. Ostling (RoyalInstitute of Technology, Sweden),who also presented the paper byR. Singh (Clemson University,USA), Z. Petrovi (University of Bel-grade, Serbia), S. Selberherr (Vien-na Technical University, Austria),Z. Stamenkovic (IHP GmbH, Ger-many), J. Stathis (IBM Research,USA), A. Vaseashta (Marshall Uni-versity, USA), A. Wang (IllinoisInstitute of Technology, USA), andH. Wong (City University of HongKong, China).

Based on evaluation of the quali-ty of the papers and presentations,three Best Paper Awards were pre-sented to K. Arshak (University ofLimerick, Ireland) for an oral paper,to Z. Jaksic (IHTM-CMTM, Serbia)for a poster paper, and to U.Abelein (University of BundeswehrMunich, Germany) for a studentpaper. In addition, MicroelectronicsReliabil ity journal awarded thepaper by D. Pic (STMicroelectron-ics, Rousset, France).

The social program of thisyear’s conference issue was partic-ularly rich, with a conference ban-quet and gala-dinner as highlights.Besides the high quality of presen-tations, MIEL is generally flavoredby a friendly atmosphere and thegreat hospitality of the local peo-ple. This special charm adds tovery positive impressions of theattendees, and that’s why one

rarely attends MIEL just once. So,we are very much looking forwardto welcoming old and new friendsat MIEL 2008.

International Conference“Mixed Design of IntegratedCircuits and Systems”- MIXDES 2006- by Andrzej NapieralskiOn June 22-24, 2006, Gdynia, Poland,the annual International ConferenceMIXDES 2006, took place. The eventwas organized by the Technical Uni-versity of Lodz, together with theGdynia Maritime University and theWarsaw University of Technology,Poland. The conference was co-spon-sored by The Institute of Electricaland Electronics Engineers, IEEE ED &CAS Poland Chapters, the CARE Pro-ject (Coordinated AcceleratorResearch in Europe), the Ministry ofScientific Research and InformationTechnology, and the Polish Academyof Sciences, Committee of Electronicsand Telecommunication, Section ofMicroelectronics and Section of Sig-nals, Electronic Circuits and Systems.

The MIXDES 2006 participants just before boarding the Dar Pomorza sailing frigate, currently preserved in Gdynia as a museum ship

Conference Chairmen: Prof. Augustin Martinez (left)and Prof. Andrzej Napieralski (right) during the Best

Paper Award Ceremony

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In addition to the regular pro-gram two special sessions wereorganized:• “Compact Models - The “Heart

of Mixed-Signal Design Flow”,organized by Wladyslaw Grabin-ski (GMC Suisse, Switzerland)and Hiroshi Iwai (Tokyo Instituteof Technology, Japan),

• CARE Project Special Sessionorganized by Stefan Simrock(Deutsches Elektronensynchro-tron DESY, Germany) and Mar-iusz Grecki (Technical Universityof Lodz, Poland).

The conference was attended byover 150 scientists coming from 37countries all over the world. Dur-ing the conference six invitedpapers and 149 regular paperswere presented at oral, poster, andspecial sessions. The conferenceproceedings (808 pages, ISBN: 83-922632-1-9) and CD ROM werepublished by the Technical Univer-sity of Lodz.

The following invited keynote pre-sentations were given: • “Thermoelectric and Thermionic

Microgenerators: Chances, Chal-lenges and Limitations” - Ger-hard Wachutka (MunichUniversity of Technology, Ger-many) and York C. Gerstenmaier(Siemens AG, Germany)

• “The New Generation of thePhotoelectr ic MeasurementMethods of MOS Structure Para-meters” - Henryk M. Przewocki(Institute of Electron Technolo-gy, Poland)

• “Physical Models for Smart-Pow-er Devices” - Massimo Rudan(University of Bologna, Italy)

• “Silicon Carbide Devices andProcesses - Present Status andFuture Perspective” - MikaelÖstling (Royal Institute of Tech-nology, Sweden)

• “TUNNETT Diode Oscillatorsfor mm-Wave Wideband Com-munication and for TerahertzElectronics” - P iotr Potka(Semiconductor Research Insti-tute, Japan)

• “New Directions in Technologyfor High-Speed Wireless DataCommunications” - Daniel Foty

(Gilgamesh Associates/SarissaRadio, Inc., USA)

Based on evaluation of the qualityof the papers and presentations,seventeen of the papers receivedthe Best Paper Award. Additional-ly, the paper enti t led “MOSTranslinear Principle Based Ana-logue Multiplier Divider” (R. Garg,J. Govil and P. Goel, University ofDelhi, India) received the IEEE EDPoland Chapter Special Awardfrom the Section Chairman.

All the conference participantsenjoyed the social program com-prising of a Welcome Party andClosing Ceremony. The ClosingCeremony took place on the deckof “Dar Pomorza” frigate, duringthe second conference day, theparticipants had the opportunity tovisit the most interesting places inGdansk and listen to an organ con-cert in the Oliva Cathedral.

The next MIXDES 2007 Confer-ence will take place in Ciechocinek,the beautiful spa city by the VistulaRiver in central Poland. The Prelim-inary Call for Papers is alreadyavailable at http://www.mixdes.org/downloads/call2007.pdf. Moreinformation about the past andnext MIXDES Conferences can befound at http://www.mixdes.org.

ED Poland- by Andrzej NapieralskiOn June 9, 2006, the Departmentof Microelectronics and ComputerScience, Technical University ofLodz, celebrated its 10th anniver-

sary. Scientists from all over theworld, inc luding the IEEE EDPoland Chapter members wereinvited to this ceremony. Duringthe open meet ing ProfessorAndrzej Napieralski presented themost important achievements ofthe Department. Professor Gilbertde Mey from the University ofGhent , Belgium and ProfessorWieslaw Kuzmicz from the War-saw University of Technology,Poland, gave short talks about thedecade long col laborat ionbetween the Department and theirUniversities. During the break theanniversary cake was shared.After the official part, all the invit-ed guests moved the debates tothe department backyard and con-t inued them over a barbecue.Over 160 guests took part in thecelebration.

~ Andrzej Napieralski, Editor

ED Kansai- by Masaaki KuzuharaThe ED Kansai Chapter held the4th International Meeting forFuture of Electron Devices, Kansai(2006 IMFEDK) at Kyoto UniversityClock Tower Centennial Hal l ,Kyoto, Japan, April 24-26, 2006.

This year, Dr. Hisatsune Watan-abe, President of SemiconductorLeading Edge Technologies, Inc.and Prof. Masahiko Tsukamotofrom Kobe University, deliveredkeynote speeches concerning thestrategy of new semiconductorR&D consort ium and wearable

ASIA & PACIFIC(REGION 10)

ASIA & PACIFIC(REGION 10)

Prof. Gilbert de Mey presenting the most“funteresting“ past memories of the

Department collaboration

Dr. Hisatsune Watanabe and Prof. MasahikoTsukamoto at the 2006 IMFEDK, April 24,

Kyoto, Japan

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computing, respect ively. Themeeting included four regular ses-sions: 1) Silicon Technology, 2)Compound Semiconductors, 3)Emerging Devices and Sensors,and 4) Model ing, Simulat ion,Characterization and Testing Tech-nologies. There was also oneposter session. Prior to the ses-sions, we had four tutorial lecturesfocusing on Sensing technologies.About 200 attendees participatedin the sessions. I t was a greatopportunity to promote cross dis-ciplinary interactions among theparticipants with different back-grounds, which was one of themain purposes of holding themeeting in Kansai.

Four papers were selected forthe IMFEDK Awards. Dr. DaisukeUeda, Chair of Executive Commit-tee of 2006 IMFEDK, honored Dr.Hiromitsu Kimura (Rohm Co.) forthe Grand Award, Dr. MarcinMiczek (Hokkaido Univ.) for the BestPaper Award, Mr. Masatoshi Koya-ma (Osaka Inst. of Tech.) and HelmyFitriawan (Kobe Univ.) for the Stu-dent Award. Related information isavailable at the conference website(http://www.imfedk.org).

ED Korea– by Hyungcheol ShinProfessor Hyungcheol Shin at

Seoul NationalUniversity hastaken over as theChair of the EDKorea Chapter.The previousChair , Prof.B y u n g - G o o kPark, served inthe position fortwo years.

The IEEE ED Korea Chapterawarded two ‘Best Poster Awards’to Oh Chang Suk at ChonbukNational University, and KwakSeung Wook at Hynix Semiconduc-tor, at the 13th Korean Conferenceon Semiconductors which washeld in Jeju, Korea, from February23-24, 2006. The two papers, “APre-DBI(PDBI) method for Giga HzDRAM’s” writ ten by Oh ChangSuk, H.J Ahn, K.J. Lee, J.W. Yang,G.M Yang, K.Y. Lim and “Reduc-tion of gate leakage currents inALGaN/GaN MOSHFET using NiO”written by Kwak Seoung Wook,G.U. Kim, G.C. Gwon, Y.K. Choi,H.W. Lee, D.W. Lee, H.W. Moon,S.D. Gang, S.H. Shin, Y.J. Choi,J.S. Ki, were accepted by the 12thconference on February 2005 andselected as ‘Best Poster Papers’ byreview among its’ committee.

Oh Chang Suk, Chonbuk Nation-al University and Kwak Seung

Wook, Hynix Semiconductor,received the Best Poster Awards.

~ Kazuo Tsutsui, Editor

ED Shanghai- by Guo-Ping RuED Shanghai organized the 6thInternational Workshop on Junc-tion Technology (IWJT-2006) dur-ing May 15-16, 2006. IWJT is anannual event; the first three andthe fifth workshops were held inJapan and the fourth was held inChina. IWJT-2006 was sponsoredby the Chinese Institute of Elec-tronics and the Japan Society ofApplied Physics (Silicon Technolo-gy Division), and technically co-sponsored by the IEEE ElectronDevices Society, IEEE ED ShanghaiChapter, in cooperation with theInternational SEMATECH & SEMIand the Electrochemical Society,supported by the School of Micro-electronics at Fudan University andNissin Ion Equipment.

IWJT-2006 consists of one ple-nary, e ight paral le l , and oneposter session with a total of 75papers, including 56 oral and 19poster papers, accepted for pre-sentation. Over 130 participants

Oh Chang Suk, Chonbuk National University andKwak Seung Wook, Hynix Semiconductor,

receiving the Best Poster Awards

Some of the attendees of the 6th International Workshop on Junction Technology( IWJT), held May 15-16, 2006

Prof. Hyungcheol Shin

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f rom 12 countr ies or regionsattended the workshop. Dr. M.Jurczak from IMEC delivered akeynote speech entitled “MUGFET– alternative transistor architec-ture for 32 nm CMOS generation”,Mr. Nobuo Nagai, the vice presi-dent of Nissin Ion Equipment,gave a keynote speech on “Chinafor semiconductor equipment sup-plier”, and Dr. Qing-Tang Jiang,the vice president of ShanghaiHua Hong NEC, presented akeynote speech on “Recent devel-opment of semiconductor technol-ogy in China”. In addi t ion, 28invited talks were presented in theparallel sessions by prominentscientists from France, Germany,Hong Kong, Japan, Korea, Singa-pore, Taiwan, UK, USA, and Main-land China. Cr i t ica l issues onjunction technology for nanome-ter CMOS, such as novel dopingtechniques, annealing process,sal ic ide, and character izat ion,were discussed extensively at theworkshop. After the two-day tech-nical program, a tour to ShanghaiHua Hong NEC and ZhangjiangCampus of Fudan University wasarranged.

IWJT-2006 has provided a verygood opportunity for Chinese sci-entists and engineers in the area ofjunction technology to have aclose contact with the world’s pio-neering scientists. Meanwhile, itgave an opportunity for overseasresearchers to have a vivid view onthe rapid growth of microelectron-ics research and industry in Main-land China.

ED Taipei- by Steve ChungThe ED Taipei Chapter organizedand co-sponsored two big events:International Conference of VLSI-TSA, and International Workshopon Next-Generation Nanoelectron-ics (IWNE) in the second quarterof 2006.

The one-day Internat ionalWorkshop on Next-Generat ionNanoelectronics (IWNE), held April20-21, at the Southern Taiwan Uni-versity of Technology (STUT). Thisworkshop was initiated by Dr. J. J.Liou (University of Central Flori-da). The Technical Chair was Prof.T. K. Chiang of STUT. Eight speak-ers, including 6 EDS DL’s and 3distinguished professors from Tai-wan were invi ted. The topicsincluded: (1) CMOS Scaling andFuture Manufacturing (HiroshiIwai, TIT); (2) Carbon Nanofibersas On-chip Interconnects (CaryYang, Santa Clara Univ. ) ; (3)Besides CMOS Transistors, WhatElse Can One Do with AdvancedGate Dielectrics? (T. P. Ma, Yale) ;(4) Advanced Simulat ions ofNanoscale Semiconductor Devices(Mark Lundstrom, Purdue); (5)Robust Electrostatic Discharge(ESD) Protection in CMOS Tech-nology (Juin J. Liou, Univ. CentralFlorida ); (6) Mobility Enhance-ment Schemes for High Perfor-mance Nanoscale CMOSTechnologies (Steve Chung,NCTU); (7) Advanced NanodeviceStructures with CdSe and/or Au

Nanoparticles for Photo-SensingAppl icat ions (Chung-Yu Wu,NCTU); (8) The Research Status ofGallium Nitride-Based Light Emit-ting Diodes (Yan-Kuin Su, NCKU),and (9) Recent Developments onGaAs-based materials MISFET (Y.H. Wang, NCKU). The workshopattracted more than 200 partici-pants. Inviting a large group ofEDS DL’s and holding such a work-shop in southern Taiwan, where anew Science-Based Park wasestablished a few years ago, is anew experience for the TaipeiChapter . The Chapter plans toorganize this workshop biannuallyin the southern Taiwan region.

The International Symposiumon VLSI Technology, Systems, andApplications (VLSI-TSA), co-spon-sored by IEEE and EDS, was heldApril 24-26, at the AmbassadorHotel, Hsinchu. In the plenary ses-sion, Hiroshi Iwai (TIT) addressedthe Semiconductor ManufacturingTechnology in the 21st Century;Hans Stork (TI) presented Chal-lenges for Process and ProductIntegration at 45nm; Eric Beyne(IMEC), delivered a talk on 3D Sys-tem Integration Technologies. Toencourage more students to partic-ipate, a student best paper awardwas established for the first time.The first winner, Chung-Hsun Lin,a Ph.D. student from UC-Berkeley,presented a paper entitled, “Com-pact Modeling of FinFETs Featur-ing Independent-Gate OperationMode” at the 2005 VLSI-TSA. Two

Symposium Chair, Prof. G. P. Li (left) presentingthe Best Student Paper Award to the winner

Mr. C.-H. Lin (right) at the VLSI-TSA 2005

Invited speakers at the 2006 International Workshop on Next-Generation Nanoelectronics. Secondrow from left to right: K. H. Yu (host, and Dean of STUT), Steve Chung, Peter Wu, H. Iwai, Cary Yang,

T. P. Ma, M. Lundstrom, and Juin J. Liou

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half-day short courses focusing on:(1) Flash memory (Chung Lam,IBM), (2) DRAM Technology (Wolf-gang Mueller , Inf ineon), (3)Advanced CMOS (M. Ieong, IBM),and (4) CMOS Manufacturing (Y. J.Mii, TSMC), ran parallel during theVLSI-TSA.

The 2006 VLSI-TSA successfullyattracted over 550 attendees inthe technical sessions and morethan 300 in the short course, with75% of the attendees from theindustry and 25% from academic.For your information, next yearthe conference will again be heldin Hsinchu, Taiwan, April 23-25,2007. The Conference will be host-ed by the Industrial TechnologyResearch Institute (ITRI). For fur-ther information, please visit theconference websi te ht tp : / /vlsitsa.itri.org.tw/2007.

AP/ED Bombay- by Mahesh PatilFor the period, Feburary – June2006, the Bombay Chapter orga-nized two events:• Professor Ajay Malshe, Univer-

si ty of Arkansas, talked on“Nano and Micro Structures,Processes and Packaging forAdvanced Integrated Systems:Research, Education and Entre-preneurship” on June 12.

• Professor R.S. Tomar, LNMInstitute of Information Technol-ogy, Jaipur, gave a lecture on“Microwave High Power Ampli-fiers for Satellite Communica-tion” on June 22.

REL/CPMT/ED Singapore- by Wilson TanAs of June 15, 2006, the chapter par-ticipated in the following activities:

1) Short Courses - Apr i l 21 ,2006, Failure Mechanisms andReliabi l i ty in Integrated Cir-cuits, Dr. M.K. Radhakrishnan,CTO of NanoRel – TechnicalConsultants. This short courseattracted 29 part icipants, 22from the industry and 7 fromacademia.

2) 11th WIMNACT – SingaporeWorkshop - was held July 4,

2006, in conjunction with theIPFA’2006 conference, withcross publicity for both events.Six invited Distinguished Lectur-ers from overseas (ProfessorsHiroshi Iwai, Supriyo Datta, CaryYang, Mitiko Miura-Mattausch,Mansun Chan & Dr. Shih-WeiSun) and 2 Local speakers (Dr.N. Balasubramanian & Dr. Chih-Hang Tung), participated in thisevent (see separate article onthis event).

3) Chapter meeting with EDSpartner - After the 11th WIMN-ACT on July 4, 2006, the Chap-ter had a one hour meet ingwith its Chapter Partner, Pro-fessor Hiroshi Iwai. Prof. Iwaigave the members a 53 pagepresentation on EDS overal ls t ructure and act iv i t ies . Hepraised the Chapter for its out-standing performance and dis-cussed detailed suggestions forfurther promoting EDS activi-ties in Singapore.

4) Conferences

IPFA2006The 13th IPFA was held on July 3-7, in the Meritus Mandarin Hotel,in the heart of Singapore’s centralbusiness district. The technicalsessions were: • FEOL (gate dielectrics, NBTI, hot

carriers, etc.) • BEOL (Cu and Al interconnects,

low-k and ultra-low-k, stress migra-

tion and electromigration, etc.)• Packaging (flip chip, system-on-

chip, SIP, etc.) • Novel device architectures,

design, processes, and charac-terizat ion (SGOI, FinFET,nanowires, CNT, etc.)

• Advanced instrumentation ormethodology for Failure Analysis

• Advances in reliability evalua-tion and approaches (methodol-ogy for novel new devices,design-in/build-in reliabil ity,wafer level reliability, etc.)

Of the approximately 100 abstractssubmitted, 44 papers were accept-ed for oral presentation and 25 forthe poster session. As well as thesubmitted papers, we had 5 invitedpapers and exchange papers fromISTFA and ESREF. This year we areparticularly fortunate and honoredto have two keynote papers givenby very prominent experts in theirfields, Professor Hiroshi Iwai ofFrontier Collaborative ResearchCenter, Tokyo and Dr. Chih-YuanLu, Senior Vice-President of Micro-electronics & Memory SolutionGroup, Macronix in Taiwan.

In a paper exchange arrange-ment, the best papers from ESREF2005 and ISTFA 2005 will be pre-sented at IPFA 2006, while the bestpapers in reliability and failureanalysis from IPFA 2006 will bepresented at the correspondingESREF & ISTFA conferences.

In conjunction with the threeday technical symposium, two

Chapter meeting with Prof. Hiroshi Iwai (middle), chapter partner

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days of tutorials were held July 3-4, 2006:

The exhibition was held in par-allel with the symposium betweenJuly 5-7 and drew just under 30companies. For more information,please visi t the IPFA website:http://137.132.146.155/ipfa/.

EPTC2006The 8th Electronics Packaging Tech-nology Conference (EPTC 2006), willbe held from December 6-8, 2006, atthe Pan Pacific Hotel, Singapore. The1st Call for Papers was recentlyannounced.

EPTC 2006 is an Internationalevent organized by the IEEE Reliabil-ity/CPMT/ED Singapore Chapter,sponsored by the IEEE CPMT Soci-ety with technical sponsorship fromIMAPS.

EPTC 2006 will feature technicalsessions, short courses and exhibi-tions. It aims to provide a good cov-erage of technological developmentsin all areas of electronic packagingfrom design to manufacturing andoperation. It is a major forum for theexchange of knowledge and pro-vides opportunities to network andmeet leading experts in the field. Formore information, please visit theEPTC website: http://www.eptc-ieee.net/.

5) OthersIPFA 20th Year - The IPFA Board meton April 21, 2006, to discuss thehosting of the “20th Year of IPFA”celebration since its first inception in1987 in Singapore. A task force com-mittee has been setup to plan forthis celebration in conjunction withthe 13th IPFA Conference to be heldfrom July 3-7, 2006, at the MeritusMandarin Hotel, Singapore.

ED SJCE Student Branch- by Karthik Y

“When the going gets tough, thetough gets going!” being themotive of the IEEE EDS studentchapter, has proved to be very trueduring the academic year 2005-06.Working successfully on the fasttrack, the chapter has organized aseries of events with the steeringfrom Dr. Navakanta Bhat, Prof, IIsc,Bangalore and Dr. C. R. Venugopal,

Prof., Dept. of Electronics and Com-munication, SJCE, Mysore.

The blinds were unfurled on theNovember 15, 2005, by PAPERPANACEA (answers to all queries onpresenting a technical paper) onNovember 15, 2005. Students turnedup in good number. There were 4technical papers on topics such assteganography, foviation, imageprocessing and soft switching ofbrushless motors. The session gavethe students a clear idea as to how apaper should be, its contents andhow to carry about an effective pre-sentation. It also enlightened thestudents more about the choice oftopics, the standards to be followedand implementation of the conceptsinvolved in the paper.

A district level “Hardware DesignContest” was conducted on Novem-ber 19, 2005, presided over by Dr.Navakanta Bhat, Prof., IISc, Banga-lore. The inauguration was followedby a talk on “Giga Scale Integrationusing Nano scale building blocks”,by Dr. Navakanta Bhat, whichtouched upon the not so frequentlyused integration techniques andshrinking transistor technology. Thestudents were also introduced to thefirst transistors of 1947 and alsoabout the first integrated circuits of1958. Our Branch Mentor also spokeabout VLSI, scaling, MOSFET,CMOS, silicon technology and fabri-cation. The talk attracted a largeinquisitive crowd, where the stu-dents got the details about theupcoming field nanotechnology.The talk was followed by a hard-ware-designing contest, inauguratedby Dr. Navakanta Bhat; the first of itskind under the events undertaken by

EDS SJCE. There was a goodresponse from the students whotested their basic skills and theirhands on hardware designing.

The hardware designing contestconsisted of two rounds. The Pre-liminary round was written consist-ing of various basic questions onelectron devices from diode to high-er end application of these devices.The students who got short listed inthe first round were selected for thefinals, wherein the students wereasked to implement a particular taskpractically in the Electronics lab.The person who came out with themost efficient design was rewardedwith a prize.

To keep up the momentum, week-ly tests and quizzes were being con-ducted on Basic Electronics torefresh and review the basic design-ing skills of the students and gener-ate hands-on practical exposure. Thetest comprises various questions onBasic Electronics, Signals and Sys-tems, Network Analysis, Digital Sig-nal Processing. This test is especiallyfor the students of Hardware branch-es, which can be called as a steptowards technical excellence.

As part of the activities during“CYBERIA 2006”, a national leveltechnical fest conducted by the IEEESJCE Student Chapter, the EDS sub-chapter coordinated and engineeredtwo events:• “X86”, National level assembly

level programming contest, onApril 1-2, 2006, and

• “Impedance”, National levelhardware design contest basedon basic analog and digital elec-tronics, on April, 2, 2006.

The Inauguration of CYBERIA’06was followed by the lively Panel Dis-cussion which noticed n exchange ofviews by the eminent personalitiesrepresenting both industry andacademia. Dr. Navakanta Bhat, thebranch mentor, actively took part inthe discussion and expressed hisviews.

This being the activities to date,this subchapter aims to channel agamut of events for this academicyear and broaden the motley withnew ideas.

~ Xing Zhou, Editor

Dr. Navakanta Bhat, during his talk on “Gigascale integration using Nano scale building

blocks” at SJCE

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October 1 - 4, 2006, T IEEE International Con-ference on Computer Design, Location: Dou-bletree Hotel, San Jose, CA, USA, Contact: PranavAshar, E-Mail: [email protected], Deadline:/6/06, www: http://www.iccd-conference.org

October 2 - 5, 2006, * IEEE International SOIConference, Location: Holiday Inn Select Nia-gara Falls, Niagara Falls, NY, USA, Contact: Bob-bi Armbruster, E-Mail: [email protected],Deadline 5/5/06, www: www.soiconference.org

October 3 - 6, 2006, T European Sympo-sium on Reliability of Electron Devices,Failure Physics and Analysis, Location: HistorischeStadthalle Wuppertal, Wuppertal, Germany,Contact: Mechthild Knippschild, E-Mail: [email protected], Deadline: 3/31/06,www: www.esref.org

October 4 - 6, 2006, T International Sympo-sium on Low-Power Electronics andDesign, Location: Rothach-Egern Conference Cen-ter, Tegernsee, Germany, Contact: Mircea Stan, E-Mail: [email protected], Deadline 3/3/06,www: http://www.islped.org

October 8 - 10, 2006, @ Bipolar/BiCMOS Cir-cuits and Technology Meeting, Location:Maastricht Exposition and Congress Centre, Maas-tricht, The Netherlands, Contact: John Long, E-Mail: [email protected], Deadline 3/12/06,www: www.ieee-bctm.org

October 10 - 13, 2006, T International Con-ference on Advanced Thermal Process-ing of Semiconductors, Location: KyotoBrighton Hotel, Kyoto, Japan, Contact: Bo Lojek,E-Mail: [email protected], Deadline 5/31/06,www: www.ieee-rtp.org

October 11 - 11, 2006, T Workshop onCompact Modeling for RF/MicrowaveApplications, Location: Maastricht Expo. AndCongress Center (MECC), Maastrict, The Nether-lands, Contact: Slobodan Mijalkovic, E-Mail: [email protected], Deadline Not Available,www: http://hitec.ewi.tudelft.nl/cmrf06

October 12 - 13, 2006, T IEEE Internation-al Seminar/Workshop on Direct and

Inverse Problems of Electromagneticand Acoustic Wave Theory, Location:Tbilisi State University, Tbilisi, Ukraine, Con-tact: Mykhalyo Andriychuk, E-Mail: [email protected] iv.ua, Deadl ine: 7/1/06, www:http://www.ewh.ieee.org/soc/cpmt/ukraine/

October 15 - 19, 2006, T InternationalAdvanced Research Workshop -”Nanoscaled Semiconductor-on-InsulatorStructures and Devices”, Location: Sudak,Crimea, Ukraine, Contact: Yuri Houk, E-Mail:[email protected], Deadline 7/15/06, www:http://www.liv.ac.uk/eee/SOIWorkshop/SOI-Workshop.htm

October 16 - 18, 2006, T InternationalConference on Advanced Semicon-ductor Devices and Microsystems ,Location: The Castle of Smolenice, Bratisla-va, Slovak Republic, Contact: Erik Vavrinsky,E-Mail: [email protected], Deadline5/15/06, www: http://www.kme.elf.stu-ba.sk/asdam/index.php

October 16 - 19, 2006, * IEEE InternationalIntegrated Reliability Workshop, Location:Stanford Sierra Conference Centers, South LakeTahoe, CA, USA, Contact: Roy and Becky Walk-er, E-Mail: [email protected], Deadline 7/12/06,www: www.iirw.org

October 18 - 20, 2006, T International Forumon Strategic Technology, Location: Lotte Hotel,Ulsan, Korea, Contact: Ui Pil Chong, E-Mail:[email protected], Deadline 6/15/06, www:http://ifost.ulsan.ac.kr

October 22 - 25, 2006, T IEEE InternationalConference on Sensors, Location: DaeguExhibition & Convention Center, Daegu, Korea,Contact: Sukhan Lee, E-Mail: [email protected],Deadline 5/1/06, www: www.ieee-sen-sors2006.org

October 23 - 26, 2006, T International Confer-ence on Solid-State & Integrated CircuitsTechnology, Location: Hotel Equator Shanghai,Shanghai, China, Contact: Mengqi Zhou, E-Mail:[email protected], Deadline 7/15/06,www: http://www.ICSICT2006.com

October 24 - 27, 2006, T International Micro-processes and Nanotechnology Confer-ence, Location: Kamakura Prince Hotel,Kamakura-shi, Japan, Contact: Hiroaki Masuko, E-Mail: [email protected], Deadline7/5/06, www: http://imnc.jp/

October 26 - 27, 2006, T International SoCDesign Conference, Location: COEX, Seoul,Korea, Contact: EuiYoung Chung, E-Mail:[email protected], Deadline 6/30/06, www:www.isocc.org

November 5 - 9, 2006, T IEEE InternationalConference on Computer Aided Design,Location: DoubleTree Hotel, San Jose, CA,USAContact: Kathy MacLennan, E-Mail:[email protected], Deadline 4/19/06,www: http://www.iccad.com/future.html

November 5 - 8, 2006, T Non-VolatileMemory Technology Symposium, Loca-tion: San Mateo Marriott, at San FranciscoAirport, San Francisco, CA, USA, Contact:Jeffrey Peloquin, E-Mail: [email protected] ta te.edu, Deadl ine 6/9/06, www:http://coen.boisestate.edu/nvmts/

November 7, 2006, T IEEE Electron DevicesActivities in Western New York Confer-ence, Location: University of Rochester,Rochester, NY, USA, Contact: Karl Hirschman,E-Mail: [email protected], Deadline: 10/13/06,www: http://www.microe.rit.edu/eds.html

November 8 - 10, 2006, T InternationalWorkshop on Dielectric Thin Films forFuture ULSI Devices: Science and Technol-ogy, Location: Kawasaki City Industrial PromotionHall, Kanagawa, Japan, Contact: TakanobuWatanabe, E-Mail: [email protected], Dead-line 7/24/06, www: http://home.hiroshima-u.ac.jp/iwdtf/

November 12 - 15, 2006, * IEEE CompoundSemiconductor IC Symposium, Location:Marriott Riverwalk Hotel, San Antonio, TX, USA,Contact: Mitchell Shifrin, E-Mail:[email protected], Deadline 5/15/06, www:http://www.csics.org

The complete EDS Calendar can be found at our web site:http://www.ieee.org/society/eds/meetings/meetings_calendar.xml Please visit!

EDS MEETINGS CALENDAR(As of September 5, 2006)

EDS MEETINGS CALENDAR(As of September 5, 2006)

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November 12 - 12, 2006, T Reliability ofCompound Semiconductors Workshop,Location: Marriott Riverwalk Hotel, San Anto-nio, TX, USA, Contact: Anthony Immorlica, E-Mail: [email protected],Deadl ine Not Avai lable, www: ht tp://www.jedec.org/home/gaas

December 4 - 5, 2006, T IEEE Wireless andMicrowave Technology Conference, Loca-tion: Marriott Suites Sand Key, Clearwater, FL,USA, Contact: John Conrad, E-Mail: [email protected], Deadline 6/23/06, www:http://wamicon.eng.usf.edu

December 6 - 8, 2006, T Conference onOptoelectronic and MicroelectronicMaterials & Devices, Location: The Univer-sity of Western Australia, Crawley (Perth),Australia, Contact: Sabine Betts, E-Mail: [email protected], Deadline 5/31/06,www: http://commad06.ee.uwa.edu.au/

December 6 - 8, 2006, T IEEE InternationalConference on Semiconductor Electronics,Location: Hyatt Regency Kinabalu, Kota Kinabalu,Malaysia, Contact: Burhanuddin Yeop Majlis, E-Mail: [email protected], Deadline8/1/06, www: http://www.eng.ukm.my/~eds/

December 7 - 9, 2006, * IEEE SemiconductorInterface Specialists Conference, Location:The Catamaran Resort Hotel, San Diego, CA,USA, Contact: Ben Kaczer, E-Mail:[email protected], Deadline Not Available, www:www.ieeesisc.org

December 11 - 13, 2006, * IEEE InternationalElectron Devices Meeting, Location: San Fran-cisco Hilton and Towers, San Francisco, CA, USA,Contact: Phyllis Mahoney, E-Mail:[email protected], Deadline 6/23/06,www: www.ieee.org/conference/iedm

December 13 - 16, 2006, T International Confer-ence on Fibre Optics and Photonics, Location:Hyderabad International Conventin Center, Hyder-abad, India, Contact: Narayana Rao, E-Mail: [email protected], Deadline: 8/21/06,www: http://www.photonics2006.co.in/

December 16 - 19, 2006, T International Con-ference on Microelectronics, Location: KingFahd University of Petroleum and Minerals,Dhahran, Saudi Arabia, Contact: Alaa Hussein, E-Mail: [email protected], Deadline 8/1/06,www: http://icm2006.kfupm.edu.sa/

December 18 - 20, 2006, T International Con-ference on Computers and Devices for

CommunicationLocation: SINP Convention Cen-ter, Kolkata, Kolkata, India, Contact: AnimeshMaitra, E-Mail: [email protected], Dead-line: 5/31/06, www: http://www.irpel.org/php-files/codec-06.php

January 6 - 10, 2007, T International Con-ference on VLSI Design , Location:NIMHANS Convention Center, Bangalore,India, Contact: S Uma Mahesh, E-Mail:[email protected], Deadline 7/14/06,www: http://www.vlsiconference.com/

February 19 - 24, 2007, T IEEE InternationalConference on the Experience of Designingand Application of CAD Systems in Micro-electronics, Location: Lviv Polytechnic NationalUniversity, Lviv, Ukraine, Contact: Vasyl Teslyuk, E-Mail: [email protected], Deadline 10/30/06,www: http://www.lp.edu.ua/CADSM

March 19 - 22, 2007, @ International Con-ference on Microelectronic Test Structures,Location: Takeda Hall, University of Tokyo,Bunkyo-ku, Japan, Contact: Yoichi Tamaki, E-Mail:[email protected], Deadline9/15/06, www: http://www.ee.ed.ac.uk/ICMTS

March 25 - 27, 2007, * IEEE International Con-ference on Portable Information Devices,Location: Orange County Convention Center, Orlan-do, FL, USA, Contact: Debora Kingston, E-Mail:[email protected], Deadline 7/15/06, www:http://www.ieee-portable.org/2007/

March 26 - 28, 2007, T IEEE InternationalSymposium on Quality Electronic Design,Location: Double Tree Hotel, San Jose, CA, USA,Contact: Ali Iranmanesh, E-Mail: [email protected],Deadline 9/30/06, www: www.isqed.org

March 28 - 29, 2007, T IEEE International Con-ference on RFID, Location: Gaylord Texan Resort &Convention Center, Grapevine, TX, USA, Contact:Bichlien Hoang, E-Mail: [email protected], Deadline:11/17/06, www: http://www.ieee-rfid.org/2007/

April 15 - 19, 2007, * IEEE International Reli-ability Physics Symposium, Location: HyattRegency Phoenix at Civic Plaza, Phoenix, AZ,USA, Contact: Edward Cole, Jr., E-Mail:[email protected], Deadline Not Available,www: www.irps.org

April 20 - 21, 2007, T IEEE InternationalSiberian Conference on Control and Com-munication, Location: Tomsk Polytechnic Univer-sity, Tomsk, Russia, Contact: Oleg Stukach, E-Mail:[email protected], Deadline 1/23/07, www:http://www.comsoc.org/tomsk

April 23 - 25, 2007, T International Sympo-sium on VLSI Technology, Systems andApplications, Location: Ambassador HotelHsinchu, Hsinchu, Taiwan, Contact: Stacey Hsieh,E-Mail: [email protected], Deadline 10/15/06,www: http://vlsitsa.itri.org.tw

April 25 - 27, 2007, T International Sympo-sium on VLSI Design, Automation andTest, Location: Ambassador Hotel Hsinchu,Hsinchu, Taiwan, Contact: Elodie Ho, E-Mail:[email protected], Deadline 10/15/06, www:http://vlsidat.itri.org.tw

April 30 - May 2, 2007, T IEEE Sarnoff Sym-posium on Advances in Wired andWireless Communications, Location: Nas-sau Inn, Princeton, NJ, USA, Contact: GerhardFranz, E-Mail: [email protected],Deadline 12/4/06, www: http://www.sarnoff-symposium.org

May 7 - 10, 2007, T International Confer-ence on Memory Technology andDesign, Location: Village Vacances Familles(VVF) “La Badine”, Hyeres Les Palmiers,France, Contact: Liesbet Massant, E-Mail: [email protected], Deadline 1/23/07, www:http://www.icmtd.com

May 14 - 18, 2007, @ International Confer-ence on Indium Phosphide and RelatedMaterials, Location: Kunibiki Messe, Matsue,Japan, Contact: Shigehisa Arai, E-Mail:[email protected], Deadline Not Available,www: http://www.iprm.jp/index.html

May 15 - 17, 2007, @ IEEE InternationalVacuum Electronics Conference, Location:Kitakyushu International Conference Center,Kitakyushu, Japan, Contact: Takao Kageyama, E-Mail: [email protected], Deadline 1/12/07,www: http://www.ivec2007.org

May 23 - 26, 2007, T InternationalConference on Perspective Technolo-gies and Methods in MEMS Design,Location: Lviv Polytechnic National Universi-ty, Lviv, Ukraine, Contact: Mykola Pereyma,E-Mail: [email protected], Deadline2/1/07, www: http://www.lp.edu.ua/Insti-tute/IKN/CAD/MEMSTECH

May 27 - 31, 2007, @ IEEE Internation-al Symposium on Power Semiconduc-tor Devices & Integrated Circuits ,Location: Ramada Plaza Jeju Hotel, Jeju,South Korea, Contact: Min-Koo Han, E-Mail:[email protected], Deadline: Not Available,www: http://www.ispsd07.org

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The 11th Workshop and IEEE EDSMini-colloquium on NAnometer CMOSTechnology (WIMNACT-Singapore)was successfully held on July 4, 2006,at the Meritus Mandarin Hotel in Singa-pore. This mini-colloquium is the 4thone organized and sponsored by theIEEE Rel/CPMT/ED Singapore Chapter,with co-sponsorship from the EDS Dis-tinguished Lecturer (DL) Program. Theevent was held together with the 13thInternational Symposium on the Physi-cal & Failure Analysis of Integrated Cir-cuits (IPFA’2006), in celebration of the20th anniversary of IPFA. After the wel-come address by the Chapter Chair,Mr. Wilson Tan, Prof. Hiroshi Iwai, EDSJr. Past President and founder of theWIMNACT series, delivered an open-ing address with a brief history of allthe past WIMNACT’s.

There were eight invited speakers,including six DLs from overseas. TheWorkshop started with a talk given byProf. Hiroshi Iwai from the Tokyo Insti-tute of Technology, entitled “HighDielectric Constant Gate Insulator Tech-nology,” followed by a talk on “Electri-cal Resistance: A Bottom-up View”,given by Prof. Supriyo Datta from Pur-due University. Prof. Cary Yang fromSanta Clara University gave a talk on“Carbon Nanofibers as On-chip Inter-connect and Thermal Interface Materi-als.” The morning session concludedwith a talk on “Silicon NanowireDevices and Their Applications toBiosensors” by Dr. N. Balasubraman-ian from the Institute of Microelectron-ics (IME, Singapore). The afternoonsession had four DL talks: “MOSFETModeling Beyond 100nm Technology”by Prof. Mitiko Miura-Mattausch fromHiroshima University, “Multi-GateMOSFET Based Non-volatile MemoryDesign” by Prof. Mansun Chan fromHong Kong University of Science &Technology, “Partnering for SoCFoundry” by Dr. Shih-Wei Sun fromUMC, and “Atomic Scale Characteriza-tion for Nanoelectronic Devices” byMr. Chih-Hang Tung of the IME, Singa-pore. The Workshop ended with a con-cluding remark by the ChapterSecretary, Prof. Kin-Leong Pey, andpresentation of tokens of appreciationto all the speakers by the ChapterChair, Mr. Wilson Tan.

The Workshop was attended bymore than 80 participants from localindustries and academic institutions. Amembership drive was also held in

conjunction with the WIMNACT andIPFA, with many new IEEE memberssigned up. The 11th WIMNACT-Singa-pore has been another successfulevent, which the Singapore Chapterhas contributed towards EDS and itsmembers. The complete informationon the 11th WIMNACT - Singapore,including slides and snapshots, as wellas links to the past WIMNACT series,has been made available on the follow-ing website: http://www.ntu.edu.sg/eee/eee6/conf/WIMNACT06.htm.

Wilson TanRel/CPMT/ED Singapore Chapter Chair

Micron Semiconductor Asia Pte Ltd.Singapore

Kin-Leong PeyRel/CPMT/ED Singapore

Chapter SecretaryNanyang Technological University

Singapore

Xing ZhouWIMNACT Organizing CommitteeNanyang Technological University

Singapore

EDS Distinguished Lecturers Participate

in the 11th WIMNACT - Singapore

From left to right: Shih-Wei Sun (DL speaker,UMC), Chih-Hang Tung (DL speaker and Chaptermember), Mansun Chan (DL speaker, HKUST),

Hiroshi Iwai (DL speaker, Tokyo Inst. Tech.), MitikoMiura-Mattausch (DL speaker, Hiroshima Univ.),Supriyo Datta (DL speaker, Purdue Univ.), Wilson

Tan (Chapter Chair), Kin-Leong Pey (ChapterSecretary), Steve Chung (SRC-AP Vice-Chair), Xing

Zhou (Organizer and Chapter member)

The 11th WIMNACT-Singapore

EDS Distinguished Lecturers Participate

in the 11th WIMNACT - Singapore

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Documents

Table of Contents 2006 IEEE International Electron Devices ... · annual technical conference, the International Electron Devices Meeting (IEDM). The 52nd IEDM will be held in San