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Status of Hamamatsu Silicon Sensors
K. Hara (Univ of Tsukuba)
Delivery leakage current at 150V & 350V number of defect channels wafer thickness & full depletion voltage bias resistance (sampling) Status of Institute tests implant tests Coupling capacitors 24-hr leakage current stability
SCT@Prague, June 2001
Delivery Date NumberIV Visual Strip DepletionIstabilityCcouplingRseriesRpoly Cis REJECTS
27.3.200017 2 17 2 0 2 0 0 0 0 020.4.200030 2 30 2 0 2 1 0 0 0 02.7.2000101 8 101 8 0 8 0 0 0 0 0
31.8.2000108 8 108 8 0 8 0 0 0 0 027.9.200088 3 88 2 1 2 0 0 0 0 0
31.10.2000167 4 167 4 2 4 1 0 0 0 3(visual)11.30.2000246 13 246 11 2 11 1 0 0 0 026.12.200057 25 57 23 2 23 4 0 0 0 0
27.3.2001100 0 100 0 0 0 0 0 0 0 026.4.2001153 0 153 0 0 0 3 0 0 0 031.5.200126 0 26 0 0 0 0 0 0 0 0
Totals: 1093 65 1093 60 7 60 10 0 0 0 0
Colour codes: Testing completed Testing in progress
Summary of Institution tests (status)
0
200
400
600
800
1000
1200
Date
cummulative
delivery/month
new mask
Delivery
~100/month so farProduction sensors with modified mask from MarchWe aim at ~300/month.
1093
Leakage current (@150, 350V)
defects
all defects
pinhole is responsible…
wafer thickness
full depletion voltage50~90V
mean=289umspec:285±15
recentdelivery
November 2000
December 2000
HPK I-V curves
IV curves
Detectors with new mask
Bias resistance, sampling 2/lot
Implant tests: sampling (2/lot)
detector defects HPK defects (identified) new defectspinhole open short
287 5 1 (1) 3 (0) 2 (2) 2 measured after826 6 5 (5) 1 (1) 0 intensive IV tests886 6 7 (6) 0
1204 3 9 (3) 0 short?1205 2 7 (2) 01224 4 5 (4) 01250 5 5 (5) 02206 4 4 (4) 02372 8 9 (8) 02426 4 4 (4) 0
Coupling capacitors
Measure nly detectors with many defects …
HPK 1204
0.0E+00
5.0E-11
1.0E-10
1.5E-10
2.0E-10
2.5E-10
3.0E-10
3.5E-10
1 101 201 301 401 501 601 701
Strip Number
Coupling C (F)
738/739/740
pinholes:174/184/186/208/209/224/738/739/740
24hr I stability
Semi-auto prober