Upload
others
View
9
Download
0
Embed Size (px)
Citation preview
UVCONTENTS
P.2
P.4
P.5
What is UV ?
Features of Hamamatsu’s devices for UV detection
Lineup
Product information
Feb. 2021
- Si photodiodes P.6 - 11
- Si APD P.12 - 13
- CCD area image sensors P.14 - 15
- CMOS linear image sensors P.16 - 17
- Mini-spectrometers P.18
Devices for UV Detection
What is ultraviolet light?Visible light, meaning light visible to the human eye, has a spectral range of approximately 400 to 700 nm. Light with shorter wavelengths is called ultraviolet light (UV). Ultraviolet light is used in a wide range of applications as light sources and detection sensors, from industries fields such as semiconductor manufacturing/inspection and food processing, to familiar places such as fire alarms and skin care against UV. In recent years, ultraviolet light has attracted attention as a key technology for sterilization and inactivation of the novel coronavirus. It is expected that UV technologies will become increasingly popular in the future.Hamamatsu provides a wide range of detectors with features such as UV high sensitivity and high UV resistance by opto-semiconductor technology amassed over many years.
Spectral response in UV region (typical example)
Features of our devices for UV detection
Normal silicon sensors can detect ultraviolet light, but some ultraviolet light is absorbed as it passes through window material and packages. Hamamatsu has improved conversion efficiency by adopting a chip structure suitable for ultraviolet light detection. By adopting a window material that easily transmits ultraviolet light and a package without window material, we have realized a high sensitivity in the ultraviolet region.
Feature 1 High sensitivity in UV region
Changes to spectral sensitivity due to UV light irradiation
[ CMOS linear image sensors S10121 to S10124 series (-01) ]
0.04
0.06
0.08
200 220 240 260 280 300
Wavelength (nm)
Phot
osen
sitiv
ity (A
/W)
0
0.12
0.10
0.02
(Ta=25 °C)
General CMOS image sensor
S10121 to S10124 series (-01)
KMPDB0628EA KSPDB0355EA
[ Si photodiode S12698 series ]
Generally, resin that generates outgas, deteriorating sensitivity of the chip, is used for adhesives such as window materials and chips, in a silicon sensor. Hamamatsu uses a resin-free package to reduce generation of outgas and realize high resistance to ultraviolet light exposure.
Feature 2 High UV resistance
Rate
of c
hang
e (%
)
Wavelength (nm)
(Typ. Ta=25 °C, D2 lamp: 30 W, irradiation distance: approx. 70 mm, irradiation time: 1000 h)
30190 300 400 500 600
110
100
90
80
70
60
50
40
S12698 series
Conventional type
2
Hamamatsu has established an integrated production system in our own factory, from the design to the assembly and inspection of optical semiconductor devices.This is why we are flexible and offer products customized according to customers’ requests.Customization examples include adding filters on window materials, tiling chips into 1D or 2D arrays, segmenting a detector’s photosensitive area, changing the package shape, and adding an electronic cooling element.
Feature 3 "Flexibility" that can be achieved by consistent in-house production
DIP type (built-in TE-cooler)
Surface mount type
CCD image sensor S10420-1004-01
CCD area image sensor S12101
Pixel size: 14 × 14 μmNumber of pixels: 1024 × 16
Customization examples
Window material
Choose from quartz, sapphire, no windows, and more. We can also form filters on the window material.
Spectral response of image sensor for each window material
Image sensor with filter on window material
Photodiode with band-pass filter
Choose from DIP (Dual Inline Package) type, surface mount type, etc. We can also change the package shape and incorporate TE-coolers inside the package.
In image sensors, we can customize the pixel size and number of pixels. We offer pixel sizes as small as 7 μm. We can also change pixel size and number of pixels to configurations other than square.
Pixel size: 12 × 12 μmNumber of pixels: 2048 × 2048
KMPDB0612EAWavelength (nm)
Quan
tum
effi
cienc
y (%
)
0
20
40
60
80
100
100 200 300 400
Without windowSapphireQuartz
(Typ. Ta=25 °C)
Product example with filter
Package Photosensitive area
3
Lineup
Hamamatsu offers a wide range of detectors, including Si photodiodes, Si APDs and CCD/CMOS image sensors, as well as modules equipped with these detectors.
Product name
P. 6 to 11
S1226/S1227 series
S1336/S1337 series
S12742 series
S15289-33
S12698 series
S10043
S8552, S8553
Type no. Photo Page
Si photodiode
Si APDS14124-20
S12053 series
S9075 / S5344 / S5345
CCD image sensorS10420-01 series
S7030/S7031 series
CMOS image sensorS11639-01
S10121 to S10124 series
Mini-spectrometerC9404CA
C9404CAH
P. 12, 13
P. 14, 15
P. 16, 17
P. 18
4
Product information
5
Si photodiodesS12698 series
FEATURES
APPLICATIONS
*1: λ=λp *2: VR=10 mV *3: VR=0 V, RL=1 kΩ, λ=655 nm *4: VR=0 V, f=10 kHz
10
0.125
30
0.5230
100
1.5700
ParameterSpectral response rangePeak sensitivity wavelengthPhotosensitivity*1
Dark current*2
Temp. coefficient of dark currentRise time*3
Terminal capacitance*4
S12698 S12698-01
50
0.6240
S12698-04 S12698-02 Unit
nmnmA/WpA
times/°CμspF
190 to 10008000.38
1.12
1.1 × 1.1TO-18
2.4 × 2.4 5.8 × 5.8TO-8
ParameterPhotosensitive area sizePackageWindow material
S12698 S12698-013.6 × 3.6
S12698-04 S12698-02 Unit
mm--
TO-5UV glass
KSPDB0350EB
0
Phot
osen
sitiv
ity (A
/W)
190 400 600 800 1000
Wavelength (nm)
(Typ. Ta=25 °C)0.4
0.3
0.2
0.1
30
Rate
of c
hang
e (%
)
190 300 400 500 600
Wavelength (nm)
(Typ. Ta=25 °C, D2 lamp: 30 W,irradiation distance: approx. 70 mm, irradiation time: 1000 h)110
100
90
80
70
60
50
40
Conventional type
S12698 series
KSPDB0355EA
High UV Resistance
With UV glass window (hermetically sealed)High reliability for monitoring UV light irradiationNo resin that causes outgassing
Power monitor for UV light sourcesAnalytical instrument
Spectral response Changes in spectral response after irradiated with UV light
Structure
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
6
Si photodiodeS10043
FEATURES
APPLICATIONS
*1: λ=193 nm *2: VR=10 mV *3: VR=0 V, RL=1 kΩ, 10 to 90% *4: VR=0 V, f=10 kHz
ParameterSpectral response rangePeak sensitivity wavelengthPhotosensitivity*1
Dark current*2
Rise time*3
Terminal capacitance*4
Specification Unit
nmnm
mA/WnAμspF
190 to 1100720150.194
ParameterPhotosensitive area sizePackageWindow material
Specification Unit
mm--
10 × 10Ceramic
None
KSPDB0257EA
Wavelength (nm)
0100 400 700200 500 800300 600 900 1000
(Typ. Ta=25 °C)
0.20
0.10
0.05
0.25
0.15
Phot
osen
sitiv
ity (A
/W)
KSPDB0264EE
S1227/S1337 series(unsealed product)
S10043
Number of shots
[Typ. Ta=25 ˚C, ArF excimer laser, 0.1 mJ/cm2/pulse, f=100 Hz,λ=193 nm, pulse width=15 ns (FWHM)]
5 × 1061 × 1060
1 × 107
40
20
60
80
100
120
S8552, S8553
Rela
tive
sens
itivi
ty (%
)
for VUV Detection
Greatly improved sensitivity stability evenafter exposure to ArF (λ=193 nm) excimer laserWindowless package
ArF excimer laser detectionVarious UV detection
Spectral response Variation in sensitivity due to VUV exposure
Structure
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
7
Product information
Si photodiodesS8552, S8553
FEATURES
APPLICATIONS
ParameterSpectral response rangePeak sensitivity wavelengthPhotosensitivity*1
Dark current*2
Rise time*3
Terminal capacitance*4
Unit
nmnm
mA/WnAμspF
190 to 110078060
ParameterPhotosensitive area sizePackageWindow material
S8553 Unit
mm--
10 × 10Ceramic
None
18 × 18S8552
S8553S8552
0.0594
0.1188
KSPDB0358EA
Wavelength (nm)
Phot
osen
sitiv
ity (A
/W)
0150 200 250 300 350 400
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
(Typ. Ta=25 °C)
KSPDB0359EA
S1227/S1337 series(unsealed product)
Number of shots
[Typ. Ta=25 ˚C, ArF excimer laser, 0.1 mJ/cm2/pulse, f=100 Hz,λ=193 nm, pulse width=15 ns (FWHM)]
5 × 1061 × 1060
1 × 107
40
20
60
80
100
120
S8552, S8553
Rela
tive
sens
itivi
ty (%
)
for VUV Detection
Greatly improved sensitivity stability evenafter exposure to ArF (λ=193 nm) excimer laser
Windowless package
Vacuum UV monitor
Excimer laser monitor
Spectral response Variation in sensitivity due to VUV exposure
*1: λ=193 nm *2: VR=10 mV *3: VR=0 V, RL=1 kΩ, 10 to 90% *4: VR=0 V, f=10 kHz
Structure
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
8
Si photodiodeS15289-33
FEATURES
APPLICATIONS
ParameterSpectral response rangePeak sensitivity wavelength
Dark current*1
Temp. coefficient of dark currentRise time*2
Terminal capacitance*3
Specification Unitnmnm
pAtimes/°C
μspF
190 to 110010000.120.5410
1.155070
ParameterPackage sizePhotosensitive area sizePackageWindow material
Specification Unitmmmm
--
3 × 32.5 × 2.5
Glass epoxyNone
Photosensitivity λ=200 nmλ=1060 nm
A/W
KSPDB0394EA
0
Phot
osen
sitiv
ity (A
/W)
190 400 600 800300 500 700 900 11001000
Wavelength (nm)
(Typ. Ta=25 °C)
0.4
0.3
0.2
0.7
0.6
0.5
0.1
QE=100%
30Rela
tive
sens
itivi
ty to
the
initi
al v
alue
(%)
190 300 400 500 600
Wavelength (nm)
(Typ. Ta=25 °C, D2 lamp: 30 W, irradiation distance:approx. 70 mm, irradiation time: 1000 h)
110
100
90
80
70
60
50
40
Previous product
S15289-33
KSPDB0395EA
High UV Resistance
High sensitivity in UV region: QE=75% (λ=200 nm)High reliability in UV light irradiationCompatible with lead-free solder reflow
Light level monitor for UV light sourceAnalytical instruments
Spectral response Changes in spectral response after irradiated with UV light
Structure
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
*1: VR=10 mV *2: VR=0 V, RL=1 kΩ, λ=650 nm, 10 to 90% *3: VR=0 V, f=10 kHz
9
Product information
Si photodiodesS12742 series
FEATURES
APPLICATIONS
ParameterCenter wavelengthSpectral response half widthPhotosensitivity*1
Dark current*2
Temp. coefficient of dark currentRise time*3
Terminal capacitance*4
S12742-254 Unitmmnm
mA/WpA
times/°CμspF
254101825
1.121
500
ParameterPhotosensitive area sizePackageWindow material
Specification Unitmm
--
3.6 × 3.6TO-5
With monochromatic light filter
S12742-220220
6
S12742-275275
10
KSPDB0390EA
200 300 400 500
Wavelength (nm)
Phot
osen
sitiv
ity (m
A/W
)
600
(Typ. Ta=25 °C)30
20
10
0
S12742-220
S12742-275
S12742-254
The S12742 series can be customized to support other peak sensitivity wavelengths such as 340 nm and 560 nm.
for Monochromatic Light
With monochromatic light filterarrow spectral response half width (FWHM): 10 nm typ.
Water quality and atmosphere analysisUV monitors (mercury lamp, etc.)
*1: λ=Center wavelength *2: VR=10 mV *3: VR=0 V, RL=1 kΩ *4: VR=0 V, f=10 kHz
Structure
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Spectral response
10
Si photodiodesS1226 / S1227 / S1336 / S1337 series
FEATURES
APPLICATIONS
*1: λ=200 nm
190 to 1000720
ParameterSpectral response rangePeak sensitivity wavelengthPhotosensitivity*1
S1226/S1227 series S1336/S1337 series UnitnmnmA/W0.12
1.1 × 1.1 to5.8 × 5.8
Metal
1.1 × 5.9 to10 × 10Ceramic
1.1 × 5.9 to18 × 18Ceramic
Parameter
PackageWindow material
S1226 series S1227 series1.1 × 1.1 to5.8 × 5.8
Metal
S1336 series S1337 series Unit
--Quartz glass
Photosensitive area size mm
190 to 1100960
High UV Sensitivity
KSPDB0094EC
Phot
osen
sitiv
ity (A
/W)
Wavelength (nm)
0.1
0190 400 600 800 1000
0.3
0.2
(Typ. Ta=25 °C)
0.4
0.5
0.6
0.7
S1226/S1227-BQ series S1336/S1337-BQ series
0.1
0190 400 600 800 1000
0.3
0.2
(Typ. Ta=25 °C)
0.4
0.5
0.6
0.7
Phot
osen
sitiv
ity (A
/W)
Wavelength (nm)
S1337-21
S1337-BQ series
KSPDB0404EA
Analytical equipmentOptical measurement equipment
High UV sensitivityIR sensitivity suppressed type (S1226/S1227 series)High sensitivity in UV to near IR range (S1336/S1337 series)
Spectral response
Structure
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
11
Product information
Si APDS14124-20
FEATURES
APPLICATIONS
*1: M=50 *2: ID=10 μA *3: M=50, f=1 MHz *4: M=50, λ=266 nm, RL=50 Ω, -3dB *4: VR=0 V, f=10 kHz
ParameterPeak sensitivity wavelength*1
Breakdown voltage*2
Temp. coefficient of breakdown voltageDark current (max.)*1
Terminal capacitance*3
Cutoff frequency*4
Gain*5
Specification UnitnmV
V/°CnApF
MHz-
6004000.78
311
25050 to 400
ParameterPhotosensitive area sizePackageWindow material
Specification Unitmm
--
2.0TO-8
AR-coated quartz
KAPDB0568EA
40
100
80
60
0
20
Quan
tum
effi
cienc
y (%
)
Wavelength (nm)
200 240 280 320 360 400
(Typ. M=1, Ta=25 °C)
High UV Sensitivity
(Typ. Ta=25 °C, λ=266 nm)1000
1
100
10
Gain
Reverse voltage (V)
200 300250 350 400 450
-20 °C
60 °C
40 °C20 °C
0 °C
KAPDB0570EA
Semiconductor inspection system
Laser processing equipment
High sensitivity: QE=87% (λ=266 nm)
Low capacitance
Low noise
Spectral response Gain vs. reverse voltage
Structure
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
12
Si APDS12053 series
FEATURES
APPLICATIONS
*1: ID=100 μA *2: RL=50 Ω *3: λ=650 nm
ParameterSpectral response rangePeak sensitivity wavelengthBreakdown voltage*1
Temp. coefficient of breakdown voltageDark currentTerminal capacitanceCutoff frequency*2
Gain*3
S12053-05 UnitnmnmV
V/°CnApF
MHz-
KAPDB0023EB
200 to 10006201500.140.25
40050
ParameterPhotosensitive area sizePackageWindow material
S12053-05 Unitmm
--
0.5TO-8
UV glass
S12053-02
0.2
S12053-10
1.0
S12053-02 S12053-10
2900
15250
0
20
40
60
80
100
Quan
tum
effi
cienc
y (%
)
(Typ. Ta=25 °C)
Wavelength (nm)
200 400 600 800 1000
High UV Sensitivity
Gain
Reverse voltage (V)
103
102
101
100
(Typ. λ=650 nm)
130 160140 150
-20 °C
0 °C
20 °C
40 °C
60 °C
KAPDB0011EC
Low-light-level measurementAnalytical instrument
High sensitivity in UV to visible rangeLow noise
Spectral response Gain vs. reverse voltage
Structure
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
13
Product information
CCD area image sensorsS10420-1106NU-01, S10420-1106NW-01
FEATURES
APPLICATIONS
ParameterSpectral response range
Conversion efficiencyDark currentReadout noise*1
Dynamic range*2
Photoresponse nonuniformity*3
S10420-1106NU-01 Unit
nm
μV/e-
e-/pixel/se- rms
-%
603006.5506
50000±3
ParameterPixel sizeNumber of eff effective pixelsPackageWindow material
Specification Unitmm
---
14 × 142048 × 64
24-pin ceramic DIPQuartz glass
Full well capacityVerticalHorizontal
ke-
200 to 1100 120 to 1100S10420-1106NW-01
KMPDB0578EB
Wavelength (nm)
(Typ. Ta=25 °C)
Quan
tum
effi
cienc
y (%
)
0
100
80
60
40
20
1200200 400 600 800 1000100
S10420-1106NU-01
S11071 seriesS10420-1004-01/-1006-01S10420-1104-01/-1106-01
S10420-1106NW-01
* The graph is plotted as 100% at the average spectral response (λ=200 to 400 nm) before irradiation.
Irradiation level (A.U.)
Rela
tive
sens
itivi
ty (%
)
0
110
100
90
80
70
60
50
40
30
20
10
Previous type
Improved type
KMPDB0610EA
*1: Ta=-40 °C, operating frequency: 20 kHz *2: Dynamic range = Full well capacity / Readout noise*3: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 660 nm)
High UV Resistance
Spectrometers
Improved etaloning characteristicsHigh UV resistanceWith anti-blooming function
Spectral response Variation in sensitivity due to UV exposure
Structure
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
14
CCD area image sensorsS7030/S7031 series
FEATURES
APPLICATIONS
ParameterSpectral response range
Conversion efficiencyDark currentReadout noise*2
Photoresponse nonuniformity*4
U type Unitnm
μV/e-
e-/pixel/se- rms
%
32010002.2508
1250004000
±3
Full well capacity*1VerticalHorizontal
ke-
200 to 1100 120 to 1100W type
Quan
tum
effi
cienc
y (%
)
Wavelength (nm)
(Typ. Ta=25 ℃)
0200100 400 600 800 1000300 500 700 900 1100 1200
10
20
30
40
50
60
70
80
90
100
S7030/S7031 series (W type)
S7030/S7031 series(standard type)
S7030/S7031 series(U type)
KMPDB0598EB
ParameterPixel sizeNumber of effective pixelsPackageWindow material
S7030-1006U/W Unitmm
---AR-coated sapphire
S7030-1007U/W S7031-1006SU/SW S7031-1007SU/SW
24.5 × 1.31024 × 58
Quartz glass24-pin ceramic DIP
24.5 × 2.91024 × 122
24.5 × 1.31024 × 58
24.5 × 2.91024 × 122
Dynamic range*3 Line binningArea scanning
-
*1: The linearity is ±1.5%. *2: Ta=-40 °C, operating frequency: 150 kHz *3: Dynamic range = Full well capacity / Readout noise*4: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 660 nm)
High UV Resistance
Fluorescence spectrometer, ICPSpectrometers
Non-cooled type (S7030 series), One-stage TE-cooled type (S7031 series)Line / PIxel binningHigh UV resistance: U type, W type
Spectral response Variation in sensitivity due to UV exposure
* The graph is plotted as 100% at the average spectral response (λ=200 to 400 nm) before irradiation.
Irradiation level (A.U.)
Rela
tive
sens
itivi
ty (%
)
0
110
100
90
80
70
60
50
40
30
20
10
Previous type
Improved type
KMPDB0610EA
Structure
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
15
Product information
CMOS linear image sensorS11639-01
FEATURES
APPLICATIONS
ParameterSpectral response rangeSaturation output voltage*1
Conversion efficiencyDark output voltage*2
Readout noiseDynamic range*3
Photoresponse nonuniformity*4
Specification UnitnmV
μV/e-
mVmV rms
-%
200 to 10002.0250.20.4
5000±2
ParameterPixel heightPixel pitchNumber of effective pixelsPackageWindow material
Specification Unitμmμm---
20014
2048LCP (liquid crystal polymer)
Quartz glass
KMPDB0449EB
Wavelength (nm)
Phot
osen
sitiv
ity (A
/W)
200 220 240 260 280 3000
0.16
0.12
0.08
0.04
(Ta=25 °C)
Previous type S11639
S11639-01
Wavelength (nm)
Phot
osen
sitiv
ity (A
/W)
200 400 600 800 120010000
0.1
0.2
0.3
0.4
0.5 (Ta=25 °C)
KMPDB0467EB
*1: Difference from output offset voltage *2: Integration time=10 ms *3: Dynamic range = Saturation output voltage / Readout noise *4: Measured at one-half of the saturation output
High UV Sensitivity
SpectrometersPosition detection
Simultaneous charge integration for all pixels5 V single power supply operationBuilt-in timing generator allows operation with onlystart and clock pulse inputs
Spectral response (typical example) Spectral response in UV region (typical example)
Structure
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
16
CMOS linear image sensorsS10121 to S10124 series
FEATURES
APPLICATIONS
ParameterPixel heightPixel pitchNumber of effective pixelsPackageWindow material
Unitmmμm---
S10122 series0.550
KMPDB0443EA
0.04
0.06
0.08
200 220 240 260 280 300
Wavelength (nm)
Phot
osen
sitiv
ity (A
/W)
0
0.12
0.10
0.02
(Ta=25 °C)
Previous type
S10121 to S10124 series (-01)
S10121 series2.550
S10123 series0.525
S10124 series2.525
CeramicQuartz glass
128 / 256 / 512 256 / 512 / 1024
0.2
0.3
200 600 1000400 800 1200
Wavelength (nm)
Phot
osen
sitiv
ity (A
/W)
0
0.4
0.1
(Ta=25 °C)
KMPDB0442EA
ParameterSpectral response rangeSaturation output chargeDark currentPhoto response non-uniformity (max.)*
UnitnmpCpA%
200 to 1000
±3
S10122 seriesS10121 series S10123 series S10124 series
320.02
1650.1
140.02
750.1
High UV Sensitivity
Smoothly varying spectral response characteristics in UV regionVariable integration time for each pixelLarge saturation output charge
Spectral response (typical example) Spectral response in UV region (typical example)
Structure
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Spectrophotometry
* Measured at one-half of the saturation output
17
Product information
Mini-spectrometersC9404CA, C9404CAH
FEATURES
APPLICATIONS
■ Spectral response in UV region (typical example)
ParameterSpectral response rangeSpectral resolution (FWHM)Wavelength reproducibilityWavelength temperature dependence
C9404CA Unitnmnmnm
nm/°C
200 to 400
-0.1 to +0.1-0.02 to +0.02
ParameterNumber of pixelsDimensions (W × D × H)WeightInterfaceExternal power supplyImage sensor
Specification Unit-
mmg-V-
1024125.7 × 115.7 × 75
670USB 1.1
5Back-thinned type CCD image sensor (S10420-1006-01)
C9404CAH
3 max. 1 typ.
High UV Sensitivity
KACCB0651EA
Wavelength (nm)
Rela
tive
sens
itivi
ty
200 400 600 8000
0.16
0.12
0.08
0.04
(Ta=25 °C)
C9404CAC9404CAH
C10082CAC10082MD (CMOS)
■ Spectral resolution vs. wavelength
Wavelength (nm)
Spec
tral r
esol
utio
n (n
m)
200 300 400
(Typ. Ta=25 °C)5
4
3
2
1
0
C9404CA (Slit width 140 μm, NA 0.11)
C9404CAH (Slit width 10 μm, NA 0.11)
KACCB0160EC
High resolution 1 nm (C9404CAH)Integrated with back-thinned type CCD image sensor:Sensitivity is about two orders of magnitude higher than CMOS types.High throughput due to transmission grating made of quartz
Low-light-level measurement such as fluorescence measurementMoisture measurementLiquid chromatography
Structure
Optical characteristics
18
Product information
Cat. No. KOTH0022E03 Feb. 2021
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81)53-434-3311, Fax: (81)53-434-5184U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218, E-mail: [email protected]: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-265-8, E-mail: [email protected]: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10, E-mail: [email protected] Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777, E-mail: [email protected] Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46)8-509 031 00, Fax: (46)8-509 031 01, E-mail: [email protected]: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39)02-93 58 17 33, Fax: (39)02-93 58 17 41, E-mail: [email protected]: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, 100020 Beijing, P.R.China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866, E-mail: [email protected]: Hamamatsu Photonics Taiwan Co., Ltd.: 8F-3, No. 158, Section2, Gongdao 5th Road, East District, Hsinchu, 300, Taiwan R.O.C. Telephone: (886)3-659-0080, Fax: (886)3-659-0081, E-mail: [email protected]
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications.The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.