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Page 1: Springer Proceedings in Physics978-3-319-97604... · 2019-01-31 · The series Springer Proceedings in Physics, founded in 1984, is devoted to timely reports of state-of-the-art developments

Springer Proceedings in Physics

Volume 215

Page 2: Springer Proceedings in Physics978-3-319-97604... · 2019-01-31 · The series Springer Proceedings in Physics, founded in 1984, is devoted to timely reports of state-of-the-art developments

The series Springer Proceedings in Physics, founded in 1984, is devoted to timelyreports of state-of-the-art developments in physics and related sciences. Typicallybased on material presented at conferences, workshops and similar scientificmeetings, volumes published in this series will constitute a comprehensiveup-to-date source of reference on a field or subfield of relevance in contemporaryphysics. Proposals must include the following:

– name, place and date of the scientific meeting– a link to the committees (local organization, international advisors etc.)– scientific description of the meeting– list of invited/plenary speakers– an estimate of the planned proceedings book parameters (number of pages/

articles, requested number of bulk copies, submission deadline).

More information about this series at http://www.springer.com/series/361

Page 3: Springer Proceedings in Physics978-3-319-97604... · 2019-01-31 · The series Springer Proceedings in Physics, founded in 1984, is devoted to timely reports of state-of-the-art developments

R. K. Sharma • D. S. RawalEditors

The Physicsof Semiconductor DevicesProceedings of IWPSD 2017

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EditorsR. K. SharmaSolid State Physics LaboratoryDelhi, India

D. S. RawalSolid State Physics LaboratoryDelhi, India

ISSN 0930-8989 ISSN 1867-4941 (electronic)Springer Proceedings in PhysicsISBN 978-3-319-97603-7 ISBN 978-3-319-97604-4 (eBook)https://doi.org/10.1007/978-3-319-97604-4

Library of Congress Control Number: 2018951402

© Springer Nature Switzerland AG 2019This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or partof the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations,recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmissionor information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilarmethodology now known or hereafter developed.The use of general descriptive names, registered names, trademarks, service marks, etc. in thispublication does not imply, even in the absence of a specific statement, that such names are exempt fromthe relevant protective laws and regulations and therefore free for general use.The publisher, the authors and the editors are safe to assume that the advice and information in thisbook are believed to be true and accurate at the date of publication. Neither the publisher nor theauthors or the editors give a warranty, express or implied, with respect to the material contained herein orfor any errors or omissions that may have been made. The publisher remains neutral with regard tojurisdictional claims in published maps and institutional affiliations.

This Springer imprint is published by the registered company Springer Nature Switzerland AGThe registered company address is: Gewerbestrasse 11, 6330 Cham, Switzerland

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Contents

Part I 2D Materials Organic Semiconductors and DisplayTechnologies

1 Enhanced Photodetection in Visible Region in rGO/GaNBased Hybrid Photodetector . . . . . . . . . . . . . . . . . . . . . . . . . . . 3Nisha Prakash, Gaurav Kumar, Manjri Singh, Prabir Pal,Surinder P. Singh and Suraj P. Khanna

2 ZigZag Phosphorene Nanoribbons Antidot—ElectronicStructure and Device Application . . . . . . . . . . . . . . . . . . . . . . . 7Santhia Carmel, Adhithan Pon, R. Rameshand Arkaprava Bhattacharyya

3 Calculation of Quantum Capacitance and Sheet Carrier Densityof Graphene FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15S. R. Pattanaik, Sriyanka Behera and G. N. Dash

4 Effect of Back Gate Voltage on Double Gate Single LayerGraphene Field-Effect Transistor with Improved ION . . . . . . . . 21Garima Shukla, Abhishek Upadhyay and S. K. Vishvakarma

5 Effects of Chemical Functionalization on Single-WalledCarbon Nanotubes by Mild Hydrogen Peroxide for PVApplications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29D. Jamwal, S. Dhall, N. Kumari and R. Vaid

6 Effect of Tip Induced Strain on Nanoscale Electrical Propertiesof MoS2-Graphene Heterojunctions . . . . . . . . . . . . . . . . . . . . . . 35Vishakha Kaushik, Deepak Varandani, Pintu Das and B. R. Mehta

7 Optimization of the Concentration of Molybdenum Disulfide(MoS2) for Formation of Atomically Thin Layers . . . . . . . . . . . 39Vineeta and Shyama Rath

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8 Fabrication of 2D NEMS on Flexible Substrates for StrainEngineering in Sensing Applications . . . . . . . . . . . . . . . . . . . . . 45Swapnil More and Akshay Naik

9 Transition Metal Doped ZnS Monolayer: The First PrinciplesInsights . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49Rajneesh Chaurasiya and Ambesh Dixit

10 Tuning Resonant Wavelength of Silicon Micro-ring Resonatorwith Graphene . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57Aneesh Dash, J. Vadivukkarasi, S. K. Selvaraja and A. K. Naik

11 Effect of Diameter and Doping on Electronic Band Structureof Single-Walled Carbon Nanotubes . . . . . . . . . . . . . . . . . . . . . 61Anup Kumar Sharma and Swati Sharma

12 Limitations of Mott-Schottky Analysis for OrganicMetal-Insulator-Semiconductor Capacitors . . . . . . . . . . . . . . . . 69Manda Prashanth Kumar, Karunakaran Logesh and Soumya Dutta

13 Study on the Conventional Versus Photonic (IPL) Sinteringof Copper Nanoparticle (Cu NPs) Inks on Different FlexibleSubstrates . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75Svetlana P. Jose, Piyush Kumar, Chinmay Bapat, Ashish Gupta,Juliane Tripathi, Monica Katiyar and Y. N. Mohapatra

14 GO Nanosheets for Solar Assisted Dye Degradationin Aqueous Solution . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81Mahima Sharma, Kannikka Behl, Subhasha Nigamand Monika Joshi

15 Resonant and Non-resonant Solutions of the Non-linearVibration of SWCNTs Embedded in Viscous Elastic MatrixUsing KBM Method . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89Monika Tyagi, Ayub Khan, Mushahid Husain and Samina Husain

16 Broadband Photodetector with Lateral n-rGO/p+SiHeterojunction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99Manjri Singh, Gaurav Kumar, Nisha Prakash, Suraj P. Khanna,Prabir Pal and Surinder P. Singh

17 Role of MoS2 on the Electrical and Thermoelectric Propertiesof Bi2Te3 and Sb2Te3 Alloys . . . . . . . . . . . . . . . . . . . . . . . . . . . 105Mujeeb Ahmad, Deepak Varandani and B. R. Mehta

18 Temperature Dependent Open Circuit Voltage Variationof Organic Solar Cells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111Prashanth Kumar Manda, Rajdeep Dhar and Soumya Dutta

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19 Effect of Pulsed Electric Field Annealing on P3HT: PCBMInverted Solar Cell Structure . . . . . . . . . . . . . . . . . . . . . . . . . . 117Chinmay N. Oak and S. Sundar Kumar Iyer

20 Towards High Performance Large Area Two ColorHybrid White Organic Light Emitting Diodes for LightingApplications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123Madhu Seetharaman, Asha Awasthi,Jaya Sandhya Meenakshinathan, Gaurav Garg, Akanksha Mohan,Krishna Manohara, Surya Bindu, Muralidharan Balakrishnanand Monica Katiyar

21 Surface Enhanced IR Absorption and Raman Detectionof Tryptophan Amino Acids Over Silver NanoislandsDeposited on Graphene . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133Preeti Garg, Praveen Sahoo, R. Raman and R. K. Soni

22 Synthesis, Characterization and Temperature Dependenceof Conductivity in Poly (o-toluidine) . . . . . . . . . . . . . . . . . . . . . 139Navdeep Sharma and Atul Kapil

23 Solvent Mixture Formulation for Inkjet Printable LightEmitting Polymer with Pixdro LP50-Ink Formulationfor Inkjet Printing of MEH: PPV . . . . . . . . . . . . . . . . . . . . . . . 149Svetlana P. Jose, Krishnamanohara, Madhu Seetharaman,Dennis Cherian, Chinmay Bapat, S. Juliane Tripathiand Monica Katiyar

24 Transport Properties and Sub-band Modulationof the SWCNT Based Nano-scale Transistors . . . . . . . . . . . . . . 155Surender Pratap and Niladri Sarkar

Part II III-Nitride: Materials and Devices

25 Modelling DC, RF and Noise Behavior of AlGaN/GaN HEMTon SiC Substrate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165Madhulika, Himanshu Pandey, Meenu Garg, Neelu Jain,Sanjeev Kumar, Amit Malik, D. S. Rawal, Meena Mishraand Arun K. Singh

26 Device Optimization of E-Mode N-Polar GaN MOS-HEMTfor Low Noise RF and Microwave Applications . . . . . . . . . . . . 171D. K. Panda and T. R. Lenka

27 60Coc Irradiation Effects on I–V Characteristics of AlGaN/GaNSchottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177Chandan Sharma, Robert Laishram, Amit, D. S. Rawal,Seema Vinayak and Rajendra Singh

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28 Effect of AlGaN Barrier Thickness on Trapping Characteristicsin AlGaN/GaN Heterostructures . . . . . . . . . . . . . . . . . . . . . . . . 183Apurba Chakraborty, Saptarsi Ghosh, Subhashis Das, Ankush Bagand Dhrubes Biswas

29 Effect of Surface Treatments on the Evolution ofMicrostructures in GaN Thin Films and GaN/AlGaN/GaNHeterostructures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187Mansi Agrawal, B. R. Mehta and R. Muralidharan

30 Effect of Argon Plasma Treatment on Ohmic Contact Formationin AlGaN/GaN HEMTs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191Sonalee Kapoor, Robert Laishram, Hemant Saini, Somna Mahajan,Rupesh Kumar Chaubey, D. S. Rawal and Seeema Vinayak

31 Investigation on the Variation of Sheet Resistanceof RF Deposited Nichrome Thin Films with DepositionParameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 199Ajay Kumar Visvkarma, Robert Laishram, Hemant Kumar Saini,Rajeev Kumar Sawal, Sonalee Kapoor and D. S. Rawal

32 A Physics Based Analytical Model for the Threshold Voltageof a Normally-off AlGaN/GaN FinFET . . . . . . . . . . . . . . . . . . . 205Punyabrata Ghatak, Debashis Dutta and Navakanta Bhat

33 Trapping Phenomenon in AlInN/GaN HEMTs: A StudyBased on Drain Current Transient Spectroscopy . . . . . . . . . . . 219Ayush Khandelwal, Gourab Dutta, Amitava DasGuptaand Nandita DasGupta

34 Development of GaN HEMTs Based Biosensor . . . . . . . . . . . . . 225N. Chaturvedi, S. Mishra, S. Dhakad, N. Sharma, K. Singh,N. Chaturvedi, R. Taliyan, A. Chauhan, D. K Kharbandaand P. K Khanna

35 Performance of Wide Band Gap Semiconductors Impattsat THz Frequencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 231S. P. Pati

36 1.7–2.1 GHz GaN Linear Power Amplifier . . . . . . . . . . . . . . . . 235Ashish Jindal, Rajiv, Parul Gupta, Umakant Goyal, S. K. Tomer,Meena Mishra and Seema Vinayak

37 Computation of Electronic and Optical Properties of GaAsNSbwith 16 Band k dot p Model . . . . . . . . . . . . . . . . . . . . . . . . . . . 241Indranil Mal, Asish Hazra, D. P. Samajdar and T. D. Das

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38 Growth and Characterization of Gallium Nitride Nanowireson Nickel/Sapphire Template by Chemical VapourDeposition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 249Sankaranarayanan Sanjay, Prabakaran Kandasamy, Shubra Singhand Krishnan Baskar

39 Effect of Growth Time on Thickness of InAlN/GaNHeterostructures Grown by MOCVD . . . . . . . . . . . . . . . . . . . . 255Pradeep Siddham, Surender Subburaj, Prabakaran Kandasamy,Jayasakthi Mathiyan, Shubra Singh and Baskar Krishnan

40 Direct Epitaxial Lateral Overgrowth of GaN on Sapphire . . . . 263Viswas Sadasivan and Manish Mathew

41 Thermal Control of Stress in Photoresist Film for ImprovingSelectivity in Electro-Plating Process . . . . . . . . . . . . . . . . . . . . . 269Niraj Kumar, Rajesh Kumar Jat, Prateek Kumar,Hemant Kumar Saini, Sneh Lata, Rupesh Kumar Chaubey,Robert Laishram, Vanita R. Agarwal and D. S. Rawal

42 Surface Study of AlGaN/GaN High Electron Mobility Transistorfor Fabrication Process Improvement . . . . . . . . . . . . . . . . . . . . 273Rupesh Kumar Chaubey, Anshu Goyal, Robert Laishram,Sonalee Chopra, Amit, Niraj Kumar, Prateek Kumarand Hemant Kumar Saini

43 The Dependence of off-State Breakdown of AlGaN/GaN HEMTson Buffer Traps, Gate Bias and Field Plate . . . . . . . . . . . . . . . . 279Sukalpa Mishra, Sudipto Bhattacharya, D. S. Rawaland S. Karmalkar

44 Terahertz Properties of GaN/AlGaN HeterostructureIMPATT Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 285S. K. Swain, S. R. Pattanaik, Janmejaya Pradhan and G. N. Dash

45 Enhancement-Mode High Electron Mobility Transistoron SiC Substrate with T-Gate Field Plate for High PowerApplications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 289Subhash Chander, Ajay and Mridula Gupta

46 Oxygen Ion Implantation Induced Effects in GaNEpilayer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 301Akhilesh Pandey, R. Raman, S. P. Chaudhaury, Davinder Kaurand Ashok K. Kapoor

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Part III Photovoltaics

47 Mixed Solvent Engineering to Optimize Morphologyand Optical Properties of Perovskite Thin Filmsfor an Efficient Solar Cell . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 309Ranbir Singh, Sanjaykumar R. Suranagi, Manish Kumarand Vivek Kumar Shukla

48 A New Additive-free Industrial Chemical Texturing Processfor Diamond Wire Sawn mc-Si Wafers . . . . . . . . . . . . . . . . . . . 315K. P. Sreejith, Sandeep Kumbhar, Ashok K. Sharma,Anil Kottantharayil and Prabir K. Basu

49 Studies on Alternate Counter Electrode Materialsfor Pt—Free Dye Sensitized Solar Cells . . . . . . . . . . . . . . . . . . 323Himanshi Jauhari, Rakhi Grover, D. S. Mehta and Kanchan Saxena

50 MoO3 as Hole-Selective Contact for Diffusion-FreeSolar Cells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 329Swasti Bhatia, Irfan M. Khorakiwala, Kurias K. Markose,Pradeep R. Nair and Aldrin Antony

51 Investigation of Active Layer Thickness Variation on thePerformance of Bulk Heterojunction Organic Solar Cells . . . . . 335Sakshi Koul and Najeeb-ud-Din Hakim

52 A Comparative Study of SiO2:TiO2 Composite and SiO2 Filmby Sol-Gel Method for Solar Cell Application . . . . . . . . . . . . . . 341Kausturi Chatterjee, Soma Ray, Baishakhi Pal, Kalyan Adhikary,Utpal Gangopadhyay and Ratan Mandal

53 Structural and Optical Characterization of InGaN/GaN BasedQuantum Well Structures Grown by MOCVD . . . . . . . . . . . . . 349Kandasamy Prabakaran, Subburaj Surender, Siddham Pradeep,Sankaranarayanan Sanjay, Madhaiyan Jayasakthi, Raju Ramesh,Eric Faulques, Manavaimaran Balaji, Shubra Singhand Krishnan Baskar

54 Photoluminescence Imaging of Silicon Wafers and Solar Cellsfor Process, Device Development and Diagnostics . . . . . . . . . . . 355Ashok K. Sharma, Manoj K. Ramanathi, Binny Nair,Tarun S. Yadav, Prabir K. Basu, Anil Kottantharayil,K. L. Narasimhan and B. M. Arora

55 Application of N-doped ZnO Nanorods in Heterojunction SiSolar Cells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361Jayasree Roy Sharma, Debolina Saha, Arijit Bardhan Roy,Gourab Das, Snehanshu Patra, A. K. Baruaand Sumita Mukhopadhyay

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56 Role of Carbon Dots in Polymer Based Bulk HeterojunctionSolar Cells to Achieve High Open Circuit Voltage . . . . . . . . . . 367Rajni Sharma, Firoz Alam, Ashok K. Sharma, V. Duttaand S. K. Dhawan

57 Effect of Thermal Stress on Power Conversion Efficiencyof PCDTBT:PC71BM Organic Solar Cells . . . . . . . . . . . . . . . . . 375Shiv Kumar Dixit, Chhavi Bhatnagar, Joginder Singh,P. K. Bhatnagar and Koteswara Rao Peta

58 Evaluation of Ga:MgZnO/CIGSe Heterojunction forRealization of All Sputtered Buffer-Less Solar Cell . . . . . . . . . . 383Vivek Garg, Brajendra S. Sengar, Nisheka Anadkat,Gaurav Siddharth, Shailendra Kumar and Shaibal Mukherjee

59 Temperature Dependent Charge/Energy Transfer Studiesof PEDOT:PSS-TiO2 Composites . . . . . . . . . . . . . . . . . . . . . . . 387Jyoti Bansal, Tarnija Sarao, Reena Kumari, Ritu Srivastav,A. K. Hafiz and Shailesh Narain Sharma

60 Methylamine Vapor Exposure for Improved Morphology andStability of Cesium-Methylammonium Lead Halide PerovskiteThin-Films . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 391Akash Singh, Arun Singh Chouhan and Sushobhan Avasthi

61 Enhancement in Power Conversion Efficiencyof Multi-crystalline Silicon Solar Cell by ZnS NanoParticles with PMMA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 399Amruta Pattnaik, Monika Tomar, Som Mondal, Vinay Guptaand B. Prasad

62 Design Optimization of Bifacial Solar Cells with Bifacialityof 100% . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 407Saima Cherukat and Anil Kottantharayil

63 Tunable Plasmonic Properties from Ag–Au Alloy NanoparticleThin Films . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 415Sanjay K. Sardana, Sanjay K. Srivastava and Vamsi K. Komarala

64 Development of High-Quality Organo-metal Halide PerovskiteFilm: Optimization of Thickness, Surface Morphologyand Characterization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 419Nidhi Gupta, Amit Kumar and Kanchan Saxena

65 Studies on the PEDOT:PSS/n-Si Hybrid HeterojunctionDiode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 423Anil Kumar, Kurias K. Markose, Irfan M. Khorakiwala,Bandana Singha, Pradeep R. Nair and Aldrin Antony

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66 Enhancing Efficiency of PEDOT:PSS Based HeterojunctionSolar Cell Through Ultra-Thin Oxide . . . . . . . . . . . . . . . . . . . . 429Prashant Singh, Sanjay K. Srivastava, Vandanaand C. M. S. Rauthan

67 Extraction of Recombination Rate Constants Using IlluminationDependent Voc of Perovskite Solar Cells . . . . . . . . . . . . . . . . . . 433Vikas Nandal and Pradeep R. Nair

68 Cell Efficiency Enhancement in Industrial MonocrystallineSilicon Solar Cells Using New Low-Cost Chemical PassivationProcess . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 437Tarun S. Yadav, K. Sandeep, Ashok K. Sharma, P. Pradeep,K. L. Narasimhan, B. M. Arora, Anil Kottantharayiland Prabir K. Basu

69 Transport Properties of La0.7Sr0.3MnO3/NSTOand La0.7Sr0.3MnO3/ZnO Perovskite Solar Cells . . . . . . . . . . . . 441Sonu Bishnoi and Saurabh Kumar Pandey

70 Optical Properties of Fe Based Perovskite and Oxygen DeficientPerovskite Structured Compounds: A Comparison . . . . . . . . . . 447Vavilapalli Durga Sankar and Shubra Singh

71 HgCdTe Epitaxial Layer Surface Treatment Using AmmoniumSulfide Before Passivation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 453Rachna Manchanda, Varun Sharma, Chanchal, V. K. Singh,Anshu Goyal, Vanya Srivastava, Ajay Kumar Saini, Nilima Singh,Raghvendra Sahai Saxena, R. Raman, Meenakshi Srivastav,Sudha Gupta, Ashok K. Kapoor and R. K. Sharma

72 Studies on n-Type a-Si:H and the Influence of ITO DepositionProcess on Silicon Heterojunction Solar Cells . . . . . . . . . . . . . . 461Irfan M. Khorakiwala, Kurias K. Markose, Anil Kumar,Nithin Chatterji, Pradeep Nair and Aldrin Antony

73 Improved Extraction of Photo-Generated Carriers in InGaNMQWSC: Effect of Staggered Quantum Wells with TripleIndium Content . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 469Basant Saini, Sugandha Sharma, Ravinder Kaur, Suchandan Paland Avinashi Kapoor

74 Alkaline Treatment of Silicon Nanostructures for EfficientPEDOT:PSS/Si Heterojunction Solar Cells . . . . . . . . . . . . . . . . 477Rumysa Manzoor, Prashant Singh, Sanjay K. Srivastava, P. Prathapand C. M. S. Rauthan

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75 Effect of Water on Cooling Efficiency of Activated CarbonBased Thermal Cooling Layer Beneath the Solar Cell to BoostTheir Working Efficiency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 481Vivek Kumar, Amit Kumar, Hrishikesh Dhasmana,Abhishek Verma and V. K. Jain

76 Efficiency Enhancement of Polycrystalline Silicon Solar Cell Dueto Integration of Ag Nanoparticles Fabricated by RapidThermal Annealing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 489Bidyut Barman, Hrishikesh Dhasmana, Abhishek Verma,Amit Kumar, D. N. Singh and V. K. Jain

77 Effect of Microstructure on Electrical Properties of Cu2ZnSnS4Films Deposited from Inks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 497Prashant R. Ghediya and Tapas K. Chaudhuri

Part IV Crystal Growth Epitaxy and Characterization

78 Study of Thermally Annealed GaSbBi Quantum Dots Grownon GaAs by Liquid Phase Epitaxy . . . . . . . . . . . . . . . . . . . . . . 505M. K. Bhowal, S. C. Das and S. Dhar

79 Growth Mechanism and Structural Characterizationof Nano-crystalline Diamond (NCD) and Micro-crystallineDiamond (MCD) Films Deposited on Silicon Substrates . . . . . . 511Amal Das, Deleep R. Nair, Amitava Dasguptaand M. S. Ramachandra Rao

80 Structural and Electrical Characteristics of HfO2 FilmDeposited by RF Sputtering and Plasma Enhanced AtomicLayer Deposition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 517Prashant Singh, Rajesh Kumar Jha, Rajat Kumar Singhand B. R. Singh

81 Effect of Samarium Coordination on the Structural, Thermaland Optical Properties of Salicylic Acid Single Crystal . . . . . . . 525Harjinder Singh, Goldy Slathia, Bindu Raina and K. K. Bamzai

82 Crystal Growth, Structural and Optical Characterizationof Lanthanum Chloride Urea–Thiourea Semi-organicComplex . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 531Goldy Slathia, Harjinder Singh and K. K. Bamzai

83 Band Gap Tailoring and Raman Studies of Mn Doped ZnOThin Film Deposited by Ultrasonic Spray Pyrolysis . . . . . . . . . 535Monoj Kumar Singha and K. G. Deepa

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84 Low Cost Alloy Deposition for High Power Applications . . . . . 541Vishwas Saini, Khushbu, Deepak Bansal and Kamaljit Rangra

85 Study of Cutting-Edge AFM Modalities and SEM Techniquesin Determining Surface Parameters of Si{111} Wafer . . . . . . . . 547Bokka Satya Srinivas, Veerla Swaranalatha,Avvaru Venkata Narasimha Rao and Prem Pal

86 Growth of Optical Grade Germanium (Ge) Single Crystalsby Czochralski Technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 553Sudeep Verma, Arun Tanwar, Vinod Kumar Gandotra,Meenakshi Srivastava and R. K. Sharma

87 Microscopic Investigation by Phase Contrast Imagingand Surface Spreading Resistance Mapping . . . . . . . . . . . . . . . 561Akhilesh Pandey, Garima and Ashok K. Kapoor

Part V VLSI Technology

88 Independent Gate Operation of NAND Flash Memory Devicewith Improved Retention Characteristics . . . . . . . . . . . . . . . . . 567Pooja Bohara and S. K. Vishvakarma

89 Floating Gate Junction-Less Double Gate Radiation SensitiveField Effect Transistor (RADFET) Dosimeter: A SimulationStudy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 571Avashesh Dubey, Rakhi Narang, Manoj Saxena and Mridula Gupta

90 3D Nano Capacitors Using Electrodeposited Nickel Nanowiresin Porous Anodic Alumina Template . . . . . . . . . . . . . . . . . . . . 577Alison E. Viegas, Sudipta Dutta, S. Rekha, M. S. Bobji,Srinivasan Raghavan and Navakanta Bhat

91 Design and Optimization of Double-Gate MOSFET to Reducethe Effects of Single Event Transients . . . . . . . . . . . . . . . . . . . . 583Y. Mohammed Aneesh, K. R. Pasupathy and B. Bindu

92 Stress Induced Degradation of High-k Gate Dielectric Ta2O5

Thin Films on Silicon . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 589Upendra Kashniyal and Kamal P. Pandey

93 Poly(ethyleneimine) Doping of CNTFETs: Effect of Solventand Optimization of Doping Parameters . . . . . . . . . . . . . . . . . . 597P. R. Yasasvi Gangavarapu, M. R. Anjanashree, Suman Pahal,Manoj M. Varma and A. K. Naik

94 Electrical Discharge Characteristics of Magnetized CapacitiveCoupled Plasma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 603S. Binwal, J. K. Joshi, S. K. Karkari and L. Nair

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95 Part I: Optimization of the Tunnel FET Device Structurefor Achieving Circuit Performance Better Than the CurrentStandard 45 nm CMOS Technology . . . . . . . . . . . . . . . . . . . . . 611Ramakant, Sanjay Vidhyadharan, Gangishetty Akhilesh,Vaibhav Gupta, Anand Ravi and Surya Shankar Dan

96 Part II: Benchmarking the Performance of OptimizedTFET-Based Circuits with the Standard 45 nm CMOSTechnology Using Device & Circuit Co-simulationMethodology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 619Sanjay Vidhyadharan, Ramakant, Gangishetty Akhilesh,Vaibhav Gupta, Anand Ravi and Surya Shankar Dan

97 Investigation of Junctionless Transistor Based DRAM . . . . . . . 629Md. H. R. Ansari, Nupur Navlakha, Jyi-Tsong Linand Abhinav Kranti

98 Study of Extended Back Gate Double Gate JunctionLessTransistor: Theoretical and Numerical Investigation . . . . . . . . 633Vandana Kumari, Abhineet Sharan, Manoj Saxenaand Mridula Gupta

99 PrMnO3-Based Scaled (<300 nm) Nonlinear RRAM Devicefor Selector-Less Array Application . . . . . . . . . . . . . . . . . . . . . 643P. Kumbhare, S. Chouhan and Udayan Ganguly

100 Simulation Study on Stability Aspect of Dual Metal DualDielectric Based TFET Architectures Against TemperatureVariations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 649Upasana, Rakhi Narang, Manoj Saxena and M. Gupta

101 Fabrication of MEMS Capacitive Pressure Sensor (MCPS)with Segmented Bossed Diaphragm . . . . . . . . . . . . . . . . . . . . . . 657Ameen Majeed and P. Ramesh

102 A New In0.53Ga0.47As LDMOS with Tunneling Junctionfor Improved on State Performance . . . . . . . . . . . . . . . . . . . . . 665Navneet Kaur Saini and Raghvendra Sahai Saxena

103 Effect of Delta-p Doping and i-Region Length Scalingon Ion/Ioff in Si NIPIN Diode for Selector Application . . . . . . . . 671Bhaskar Das, J. Schulze and Udayan Ganguly

104 Effect of Gate Dielectric Material on the Analog Performanceof a Ge-Source Tunnel FET . . . . . . . . . . . . . . . . . . . . . . . . . . . 675Emona Datta, Avik Chattopadhyay and Abhijit Mallik

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105 Self-heating in Inserted Oxide FINFETs . . . . . . . . . . . . . . . . . . 681Narasimha Rao Mavilla, Prashanth Paramahans Manikand Mohit Bajaj

106 CD Sensitivity to Process Parameters in Photomask FabricationUsing a LASER Pattern Generator . . . . . . . . . . . . . . . . . . . . . . 685A. B. Dhaulakhandi, Shyamali Thakur and S. K. Koul

107 Analyzing the Impact of Grain Boundary Scattering on theMetal Resistivity: First-Principles Study of Symmetric TiltGrain Boundaries in Copper . . . . . . . . . . . . . . . . . . . . . . . . . . . 691Hemant Dixit, Aniruddha Konar, Rajan Pandey, Jin Choand Francis Benistant

108 Analytical Model for Tapered Gate Electrode Double GateMOSFET Incorporating Fringing Field Effects . . . . . . . . . . . . . 697Rakhi Narang, Gokulnath Rajendran, Mridula Guptaand Manoj Saxena

Part VI Sensors

109 Dielectric Modulated AlGaAs/GaAs HEMT for Label FreeDetection of Biomolecules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 709R. K. Paswan, D. K. Panda and T. R. Lenka

110 Investigation of Sensitivity of Gate Underlap JunctionlessDG MOSFET for Biomolecules . . . . . . . . . . . . . . . . . . . . . . . . . 717Ajay, Rakhi Narang, Manoj Saxena and Mridula Gupta

111 Process Design for Fabrication of Multi-stack MEMS CapacitivePush-Pull Accelerometer Based on SOI Technology . . . . . . . . . 725Abha Panchal, Shankar Dutta, Ramjay Pal, Kapil Kumar Jainand D. K. Bhattacharya

112 Design, Modeling and Simulation of Square Diaphragm Based,Piezoelectric (AlN) MEMS Acoustic Sensor for High SPLMeasurements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 731Dhairya Singh Arya, Sushil Kumar, Mahanth Prasad,Pushpapraj Singh and Chandra C. Tripathi

113 Development of Low Leakage Charged Particle DetectorsSuitable for Alpha Spectroscopy . . . . . . . . . . . . . . . . . . . . . . . . 743Nageswara Rao Pedapati, S. Nisha, Arijit Das, Dheeraj Motagiand Ranjay Laha

114 Design and Optimization of MEMS-Based Four Beam VectorHydrophone for Direction of Arrival . . . . . . . . . . . . . . . . . . . . 753R. P. Singh, Sanjeev Kumar, Komal Gupta, Devendra Vermaand D. K. Bhattacharya

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115 Implantable Multisensory Microelectrode Biosensorfor Revealing Neuron and Brain Functions . . . . . . . . . . . . . . . . 763N. Manikandan, S. Muruganand, Karuppasamyand Senthil Subramanian

116 Selection of an Efficient Next Hop Metric in Wireless SensorNetworks Using Fuzzy Logic . . . . . . . . . . . . . . . . . . . . . . . . . . . 771Sukhkirandeep Kaur and Roohie Naaz Mir

117 PSPICE Circuit Simulation of Microbolometer IRFPA Unit CellUsing Sub-circuit Model of Microbolometer . . . . . . . . . . . . . . . 775Arun Panwar and Raghvendra Sahai Saxena

118 Design and Simulation of Acoustic Particle VelocitySensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 779Saha Tulana, R. P. Singh, Barman Sanjeeev, Tauheed Abdul,Gupta Komal, Verma Devendra and D. K. Bhattacharya

119 Design and Simulation of SOI-ISFET MacromodelUsing SPICE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 789Mohit Padhye, Soumendu Sinha, Rishi Sharmaand Ravindra Mukhiya

120 Feasibility Analysis of Acoustic Bragg Reflectors for UnreleasedOpto-mechanical Resonators . . . . . . . . . . . . . . . . . . . . . . . . . . . 797Ambika Shanker Shukla and Siddharth Tallur

121 Silicon Etching Characteristics in Modified TMAHSolution . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 801Veerla Swarnalatha, Avvaru Venkata Narasimha Rao and Prem Pal

122 Nanostructured SnO2 Films: Room TemperatureNH3 Sensing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 809M. Abinaya, Ramjay Pal and M. Sridharan

123 TiO2 Thin Film Optimization for Ammonia Gas Sensing . . . . . 819Neha Sakhuja and Navakanta Bhat

124 Fabrication and Characterization of Enzymatic ElectrochemicalGlucose Sensor for Closed Loop System . . . . . . . . . . . . . . . . . . 829Rekha Phadke and H. C. Nagaraj

125 Temperature Compensation of MEMS CapacitiveAccelerometer for Navigational Application . . . . . . . . . . . . . . . 839Yashoda Parmar, Shaveta, Shankar Dutta, Ramjay Paland Kapil Kumar Jain

126 Development of Barometric Pressure Sensor for MicroAir Vehicle Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 845S. Santosh Kumar, Amit Tanwar and B. D. Pant

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127 Room Temperature Organophosphate Detection by ThermallyOxidized Metal Oxide Thin Films . . . . . . . . . . . . . . . . . . . . . . . 849Surya Prakash Ghosh, Saswat Pattnaik, Kailash Chandra Das,Nilakantha Tripathy, Diana Pradhan, Gouranga Boseand Jyoti Prakash Kar

128 Design of Continuous Membrane Surface MicromachinedSilicon Deformable Mirror for Adaptive Optics . . . . . . . . . . . . 855Renu Sharma, Isha Yadav, Aklesh Meena, Manoj Kumar,Renuka Saxena and Kapil Kumar Jain

129 High Charge Storage Capacity Micro Electrode Arrayon a Wire for Implantable Neuromuscular Applications . . . . . . 863D. V. Santhosh Kumar Gunapu and Siva Rama Krishna Vanjari

130 Electrochemically Synthesized Polypyrrole Nanofibers TowardsGlucose Biosensing Application . . . . . . . . . . . . . . . . . . . . . . . . . 871Pramila Jakhar, Mayoorika Shukla and Vipul Singh

131 Effect of Si3N4 Passivation on the Acetone Sensing Performanceof Pd/AlGaN/GaN Heterostructure . . . . . . . . . . . . . . . . . . . . . . 875Subhashis Das, Ankush Bag, Saptarsi Ghosh, Satinder K. Sharmaand Dhrubes Biswas

132 Simulation of Adsorption of Gas Molecules on CarbonNanosensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 881Ahsana Sadaf, Himanshu Baria and Neeraj Jain

133 A Large Stroke Inverse Series Connected ElectrothermalBimorph Micromirror Platform for Optical Applications . . . . . 889Amit Kumar, Deepak Bansal, Maninder Kaur and Kamaljit Rangra

134 AlGaN/GaN HEMT Based pH Sensor . . . . . . . . . . . . . . . . . . . . 897N. Sharma, S. Dhakad, K. Singh, N. Chaturvedi, A. Chauhan,C. Periasamy and N. Chaturvedi

135 Low Cost Foam Based Vibration Sensor for ConditionBased Monitoring . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 901Reshma Ajith, Amit Tewari, Dipti Gupta and Siddharth Tallur

136 Influence of Humidity on the NO2 Sensing Propertiesof SrCo0.1Ti0.9O3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 905Neha Sarin, Sachin Kumar, Ivan P. Parkin and Vandna Luthra

137 Design and Simulation of Push–Pull Capacitive AccelerometerStructure for Navigation Applications . . . . . . . . . . . . . . . . . . . . 913Shaveta Rajial, Nidhi Gupta, Ramjay Pa and Kapil Kumar Jain

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138 Deposition and Optimization of Zinc Oxide Thin FilmUsing Its Nano-colloidal Solution for Various SensingApplications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 919Ashish Kumar, R. P. Yadav, Vijay Janyani and Mahanth Prasad

139 Sensing of Dibutyl Sulfide Using Carboxylic Acid FunctionalizedSingle Walled Nanotubes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 923Deepak Kumar, Pika Jha, Abhilasha Chouksey and J. S. Rawat

140 Development of Silicon Based Microchannel for GasChromatograph Column . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 927Renuka Saxena, S. S. Lamba, Vinita Gond, M. Islam,Jitendra Kumar and Kapil Kumar Jain

141 Textured Silicon Surface and Silicon Nanowires on Silicon Chipfor Ammonia Sensing Application . . . . . . . . . . . . . . . . . . . . . . . 931Amit Kumar, Daisy Verma, Hrishikesh Dhasmana, Vivek Kumar,Abhishek Verma and V. K. Jain

142 A Comparative Study of Metal Oxide Modified, SiliconWafer and Silicon Nanowires on Silicon Chip as Gas/VaporSensing Element . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 939Saravanan Yuvaraja, Hrishikesh Dhasmana, Amit Kumar,Bidyut Barman, Vivek Kumar, Abhishek Verma and V. K. Jain

143 Functionalized Graphene for NO2 Sensing: Kelvin Probe BasedContact Potential Difference (CPD) Measurements . . . . . . . . . . 947Pankaj B. Agarwal, Sami Ullha and Sumit Sharma

144 Effect of Residual Stress on Cantilever Type Push–PullCapacitive Accelerometer Structure . . . . . . . . . . . . . . . . . . . . . 951Nidhi Gupta, Shaveta, Shankar Dutta, Ramjay Paland Kapil Kumar Jain

Part VII Optoelectronics

145 Designing InP-Nanowire Based Vertical Metal-Oxide-Semiconductor Capacitors for Wavelength Selective VisibleLight Sensing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 957Subhrajit Sikdar, Basudev Nag Chowdhuryand Sanatan Chattopadhyay

146 Estimation of Scattering Loss Due to Sidewall Roughnessin High Power Laser Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . 963Deepti Jain, Somna Mahajan, Alok Jain, Manjeet Singhand Shabbir Mohammed

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147 Substrate Dependent Growth of DH6T Small Moleculesin Vapor Deposited Thin Films . . . . . . . . . . . . . . . . . . . . . . . . . 967C. Shalu, S. Raj Mohan, Mukesh P. Joshi and Vipul Singh

148 Stable Optical Quality SiO2/TiO2 Stack Developmentfor the Facet Coating of Laser Diodes . . . . . . . . . . . . . . . . . . . . 973D. K. Mohanty, Anshu Goyal, K. Chandhok and Alok Jain

149 MgZnO Based UV Heterojunction Photodetector FabricatedUsing Dual Ion Beam Sputtering . . . . . . . . . . . . . . . . . . . . . . . 981Ritesh Bhardwaj, Pankaj Sharma, Md Arif Khan, Rohit Singhand Shaibal Mukherjee

150 Scaling of Silicon PIN Waveguide Photodetectorat 1550 nm Wavelength . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 985Sreevatsa Kurudi, Riddhi Nandi and Bijoy Krishna Das

151 Photo-Response of Carbon Nanotubes and Si Junctions . . . . . . 989Shivani Dhall and B. R. Mehta

152 Estimation of Current Conduction Mechanisms Using GatedMWIR HgCdTe Photodiode . . . . . . . . . . . . . . . . . . . . . . . . . . . 993Nilima Singh, Arun Panwar and Raghvendra Sahai Saxena

153 Synthesis of 2D MoS2 Nanosheets by Facile HydrothermalMethod for Its Functioning as Multi Wavelength OpticalSensing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1001Nahid Chaudhary, Abid, Manika Khanuja and S. S. Islam

154 InGaN/GaN Multiple Quantum Well Blue Light EmittingDiodes with Transparent Ni/ITO and Pt/ITOp-Type Contacts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1005Kuldip Singh, A. Chauhan, Manish Mathew, Rajesh Puniaand Rajender Singh Kundu

155 Investigation of Electronic and Optical Propertiesof GaSbBi/GaAs Type-II Quantum WellsUsing 14-Band k � p Hamiltonian . . . . . . . . . . . . . . . . . . . . . . . 1013Indranil Mal, Asish Hazra, D. P. Samajdar and T. D. Das

156 Chemo-mechanical Polishing of HgCdTe Epilayers GrownUsing LPE Technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1021Radheshyam Nokhwal, Akhilesh Pandey, B. L. Sharma,Rachna Manchanda, Varun Sharma, Sandeep Dalal,Raghvendra Sahai Saxena and R. K. Sharma

157 Investigations on the Effects of 150 MeV Ag Ion Irradiationson 4H–SiC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1027A. Ashraf Ali, J. Kumar, V. Ramakrishnan and K. Asokan

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158 Effect of Carbon Ion Implantation on a Bi-Layer TransparentElectrode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1033Priyanka Garg, Vikas Sharma, Surbhi, Satyavir Singhand K. Sachdev

159 Type-II Superlattice Infrared Photodetector (T2SL IRPD)Miniband Modeling: An Atomistic NEGF Study . . . . . . . . . . . . 1039Swarnadip Mukherjee and Bhaskaran Muralidharan

160 Numerical Analysis on the Phenomenon of AbsorptiveBistability in Quantum Cascade Lasers . . . . . . . . . . . . . . . . . . . 1047P. Ashok and M. Ganesh Madhan

161 Si-Photonics Assisted Optical Single Side Band Generation,Transmission and Reception . . . . . . . . . . . . . . . . . . . . . . . . . . . 1055Awanish Pandeu and S. K. Selvaraja

162 Effect of Oxygen Pressure on Growth of Cd0.05Zn0.95O ThinFilms Using Pulsed Laser Deposition . . . . . . . . . . . . . . . . . . . . 1059Sugandha Sharma, Basant Saini, Ravinder Kaur, Vinay Gupta,Monika Tomar and Avinashi Kapoor

163 Estimation of the Occupied Density of States UsingCapacitance–Voltage Measurement in the NPB System . . . . . . 1065Sunil Kumar, Upkar K. Verma and Y. N. Mohapatra

164 Optically Controlled Silicon on Nothing MOSFET-NumericalSimulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1071Vandana Kumari, Manoj Saxena and Mridula Gupta

165 Degradation and Bias-Stress Effect in TIPS-Pentacene BasedOrganic Thin Film Transistors with Polymer Dielectric . . . . . . 1077Subhash Singh and Y. N. Mohapatra

166 InGaAs Based Short-Wave Infrared p-i-n Photodetector . . . . . 1083Anand Singh, Sumit Jain, Anil Kumar and Vanita R. Agarwal

167 Optimization of Al Composition in EBL of InGaN/GaN BasedLaser Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1089Abhishek Sharma, Kamal Lohani, Pramod Kumar and Alok Jain

168 Highly Reflective Low Resistance Pt/Ag/Ni/Au Based OhmicContacts on p-GaN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1095A. Chauhan, Kuldip Singh, Manish Mathew, Rajender Singh Kunduand Rajesh Punia

169 Three Dimensional Thermal Modeling of LaserDiode Stack . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1103Pramod Kumar, Abhishek Sharma and Alok Jain

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170 Studies on Iodine Based Polishing of HgCdTe Material . . . . . . 1111Radheshyam Nokhwal, Anshu Goyal, B. L. Sharma, Varun Sharma,Raghvendra Sahai Saxena and R. K. Sharma

171 Electrical Characteristics of Spray Deposited n-ZnO:Sr/p-SiHeterojunction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1117P. V. Raghavendra and J. S. Bhat

172 Optical and Structural Analysis of Surfactant AssistedHydrothermal Growth ZnO Nanostructures . . . . . . . . . . . . . . . 1123Jitesh Agrawal, Tejendra Dixit, I. A. Palani and Vipul Singh

173 Performance Optimization and Analysis of ZnO Based GreenLight Emitting Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1127Rashmi Ranjan Kumar, Deepak Punethaand Saurabh Kumar Pandey

174 Polarization Controlled High Efficiency Color FiltersUsing Si Nanoantennas . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1137Vishal Vashistha, Indu Kumari, A. E. Serebryannikovand Maciej Krwaczyk

175 Study and Preparation of High ReflectionOptical Coatings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1143Renuka Saxena, Leela Dhar, D. K. Mohanty, Renu Sharmaand Kapil Kumar Jain

Part VIII Compound Semiconductors

176 Electronic Structure Properties of ATe and A2Te(A: Cu, Ag and Cd) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1151T. Premkumar, J. Mani, G. Anbalagan and R. Vidya

177 Noise Estimation of Heterostructure GaAs/GaP OverHomostructure GaAs and GaP Based IMPATT Devicesat 94.0 GHz Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1159P. R. Tripathy, S. K. Choudhury and S. P. Pati

178 Study of Interface Trap Charges in InAs NanowireTunnel FET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1165Sankalp K. Singh, Ankur Gupta, Venkateshan Nagarajan,Deepak Anandan, Ramesh K. Kakkerla, Hung W. Yuand Edward Y. Chang

179 Origin of Room Temperature Ferromagnetismin ZnO:Ag . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1171Nasir Ali, Budhi Singh, Zaheer Ahmed Khan and Subhasis Ghosh

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180 Calculation of Elastic Properties of Titanium FluorideCompounds—A DFT Study . . . . . . . . . . . . . . . . . . . . . . . . . . . 1177R. Mariyal Jebasty and R. Vidya

181 Analytical Modeling and Simulation Study of Homoand Hetero III-V Semiconductor Based Tunnel FieldEffect Transistor (TFET) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1185M. Lakshmi Varshika, Rakhi Narang, Mridula Guptaand Manoj Saxena

182 Enhanced Cold Cathode Electron Emission from ZnONanostructure Attached Amorphous Carbon Nanotubes . . . . . 1195Supratim Maity and Kalyan Kumar Chattopadhyay

183 Surface Stabilised Quantum Confined ZnO Nanosystems . . . . . 1203Ashish Kumar Keshari, Manjeet Singh and Manish Sharma

184 Effect of Composite Electrode Slurry Preparation Methodon Electrochemical Characteristics of LiFePO4/C BasedLi-ion Cell . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1209A. Srinivas Kumar, T. Venugopala Rao, Prerana Priydarshini,T. V. S. L. Satyavani and Shashikant

185 Growth of Beta Phase Gallium Oxide Nanostructureson Sapphire Substrate by Chemical Vapour Deposition . . . . . . 1217Thangaraj Rajesh, Ganapathy Sasikala, Subramanian Sumathiand Subramanian Suguna

186 Light Emitting Diode and UV Photodetector Characteristicsof Solution Processed n-ZnO Nanorods/p-SiHeterostructures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1223Chandni Kumari and Ambesh Dixit

187 Band Gap Engineering of CdTe Quantum Dots by HgAlloying in Infrared Region . . . . . . . . . . . . . . . . . . . . . . . . . . . 1231Anurag Sahu, Shay Tirosh, Arie Zaban, Kirankumar Hiremathand Ambesh Dixit

188 Photoelectrochemical Study of TiO2/CdS HeterostructureThin Films Prepared via rf Sputtering . . . . . . . . . . . . . . . . . . . 1235Nisha Kodan, Aadesh P. Singh, Dipika Sharma and B. R. Mehta

189 Modeling & Simulation of Thermal Evaporated CdTeThin Film . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1241Shailendra Kumar Gaur, Ajay Kumar Saini, Vijay Singh Meenaand B. L. Sharma

Contents xxiii

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190 Understanding the Optical, Electrical and PhotoelectrochemicalProperties of PbTiO3 Thin Films . . . . . . . . . . . . . . . . . . . . . . . 1249Dipika Sharma, Rishibrind Kumar Upadhyay, Nisha Kodanand B. R. Mehta

191 Modulating Structural, Optical and Electrical Properties of ZincOxide by Aluminium Doping . . . . . . . . . . . . . . . . . . . . . . . . . . 1255Anita Singh and Vandna Luthra

192 Performance of 4H-SiC and Wz-GaN Over InP IMPATTDevices at 1.0 THz Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . 1267P. R. Tripathy, M. Mukherjee and S. P. Pati

193 Enhanced Sheet Carrier Density in ZnO Based Heterostructureby Alloying Cadmium in Buffer Layer ZnO . . . . . . . . . . . . . . . 1273Md Arif Khan, Rohit Singh, Ritesh Bhardwaj, Abhinav Krantiand Shaibal Mukherjee

194 Synthesis of Ag/TiO2 Nanocomposite for Waste WaterTreatment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1277Simranjit Singh and Monika Joshi

195 Enhancement of Solar-to-Hydrogen Conversion EfficiencyAchieved for Silicon Doped ZnO Nanorods . . . . . . . . . . . . . . . . 1285Akash Sharma and R. Thangavel

196 Surface Plasmon Resonance Enhanced UV Emissionof Hydrothermally Grown ZnO Nanorods by ReducedGraphene Oxide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1293Khyati Gautam, Inderpreet Singh, Chhavi Bhatnagar,P. K. Bhatnagar and Koteswara Rao Peta

xxiv Contents

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Contributors

Tauheed Abdul Solid State Physics Laboratory, Timarpur, New Delhi, India

Abid New Delhi, India

M. Abinaya Functional Nanomaterials & Devices Lab, SASTRA Deemed to beUniversity, Thanjavur, Tamil Nadu, India

Kalyan Adhikary Centre of Advanced Research in Renewable Energy and SensorTechnology, Kolkata, West Bengal, India

Pankaj B. Agarwal CSIR-Central Electronics Engineering Research Institute(CSIR-CEERI), Pilani, India

Vanita R. Agarwal Solid State Physics Laboratory, Timarpur, New Delhi, Delhi,India

Jitesh Agrawal Molecular and Nanoelectronics Research Group (MNRG),Department of Electrical Engineering, IIT Indore, Indore, Madhya Pradesh, India

Mansi Agrawal Department of Physics, Indian Institute of Technology Delhi,Hauz Khas, New Delhi, India

Mujeeb Ahmad Department of Physics, Indian Institute of Technology Delhi,New Delhi, India

Ajay Advanced Nanoelectronics Computation Laboratory, Department ofElectronic Systems Engineering, Indian Institute of Science, Bengaluru, Karnataka,India

Reshma Ajith National Institute of Technology, Tiruchirappalli, India;Department of Electrical Engineering, Indian Institute of Technology Bombay,Powai, Mumbai, India

Gangishetty Akhilesh Department of Electrical and Electronics Engineering,Birla Institute of Technology and Science Pilani, Hyderabad, Telangana, India

xxv

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Firoz Alam Centre for Energy Studies, Indian Institute of Technology Delhi, NewDelhi, India

A. Ashraf Ali Crystal Growth Centre, Anna University, Chennai, India

Nasir Ali School of Physical Sciences, Jawaharlal Nehru University, Munirka,New Delhi, Delhi, India

Amit Solid State Physics Laboratory, New Delhi, Delhi, India

Nisheka Anadkat Hybrid Nanodevice Research Group (HNRG), ElectricalEngineering, Indian Institute of Technology, Indore, India

Deepak Anandan Department of Materials Science and Engineering, NCTU,Hsinchu, Taiwan

G. Anbalagan Department of Nuclear Physics, University of Madras, Chennai,Tamil Nadu, India

Anita Singh Gargi College, University of Delhi, New Delhi, India

M. R. Anjanashree Centre for Nano Science and Engineering, Indian Institute ofScience, Bengaluru, India

Md. H. R. Ansari Discipline of Electrical Engineering, Indian Institute ofTechnology Indore, Simrol, Indore, India

Aldrin Antony Energy Science and Engineering, Indian Institute of TechnologyBombay, Mumbai, India; Department of Energy Science and Engineering, IndianInstitute of Technology Bombay, Powai, Mumbai, Maharashtra, India

B. M. Arora Department of Electrical Engineering (EE), Indian Institute ofTechnology Bombay, Mumbai, India; National Centre for Photovoltaic Researchand Education (NCPRE), Indian Institute of Technology Bombay, Mumbai, India

Dhairya Singh Arya Center for Applied Research in Electronics, Indian Instituteof Technology Delhi, New Delhi, India

P. Ashok Madras Institute of Technology, Anna University, Chennai, India

K. Asokan Inter-University Accelerator Centre, New Delhi, India

Sushobhan Avasthi Centre for Nano Science and Engineering, Indian Institute ofScience, Bengaluru, India

Asha Awasthi National Centre for Flexible Electronics, Indian Institute ofTechnology, Kanpur, Uttar Pradesh, India

Ankush Bag School of Computing and Electrical Engineering, Indian Institute ofTechnology Mandi, Mandi, Himachal Pradesh, India

Mohit Bajaj Global Foundries, Bengaluru, India

xxvi Contributors

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Manavaimaran Balaji Department of Energy, University of Madras, Chennai,Tamil Nadu, India

Muralidharan Balakrishnan National Centre for Flexible Electronics, IndianInstitute of Technology, Kanpur, Uttar Pradesh, India

K. K. Bamzai Crystal Growth & Materials Research Laboratory, Department ofPhysics, University of Jammu, Jammu, India

Deepak Bansal Academy of Scientific and Innovative Research, Taramani,Chennai, India; CSIR—Central Electronics Engineering Research Institute, Pilani,Rajasthan, India

Jyoti Bansal Jamia Millia Islamia, New Delhi, India; National PhysicalLaboratory, CSIR-Network of Institutes for Solar Energy, New Delhi, India

Chinmay Bapat National Centre for Flexible Electronics, Kanpur, India

Himanshu Baria Amity University, Noida, Uttar Pradesh, India

Bidyut Barman Amity Institute for Advanced Research and Studies (Materialsand Devices) & Amity Institute of Renewable and Alternative Energy, AmityUniversity, Noida, Uttar Pradesh, India

A. K. Barua Centre of Excellence for Green Energy and Sensor Systems, IndianInstitute of Engineering Science and Technology, Shibpur, Howrah, India

Krishnan Baskar Crystal Growth Centre, Anna University, Chennai, Tamil Nadu,India; Manonmaniam Sundaranar University, Tirunelveli, Tamil Nadu, India

Prabir K. Basu National Centre for Photovoltaic Research and Education(NCPRE), Indian Institute of Technology Bombay, Mumbai, India

Sriyanka Behera School of Physics, Sambalpur University, Burla, Sambalpur,Odisha, India

Kannikka Behl Amity Institute of Biotechnology, Amity University, Noida, India

Francis Benistant GLOBALFOUNDRIES, Singapore, Singapore

Ritesh Bhardwaj Hybrid Nanodevice Research Group (HNRG), ElectricalEngineering, Indian Institute of Technology Indore, Simrol, Indore, India

J. S. Bhat Department of Physics, Karnatak University, Dharwad, India

Navakanta Bhat Centre for Nano Science and Engineering, Indian Institute ofScience, Bengaluru, India

Swasti Bhatia Electrical Engineering, Indian Institute of Technology Bombay,Mumbai, India

Contributors xxvii

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Chhavi Bhatnagar Department of Electronics, Maharaja Agrasen College,University of Delhi, New Delhi, India; Department of Electronic Science,University of Delhi, New Delhi, India

P. K. Bhatnagar Department of Electronic Science, University of Delhi, NewDelhi, India

D. K. Bhattacharya Solid State Physics Laboratory, Defence Research &Development Organisation, Timarpur, New Delhi, India

Sudipto Bhattacharya Research and Innovation Centre, IIT Madras ResearchPark, Chennai, India

Arkaprava Bhattacharyya Device Modeling Laboratory, School of Electrical &Electronics Engineering, SASTRA University, Thanjavur, Tamil Nadu, India

M. K. Bhowal Department of Electronic Science, University of Calcutta, Kolkata,India

B. Bindu VIT University, Chennai, India

Surya Bindu National Centre for Flexible Electronics, Indian Institute ofTechnology, Kanpur, Uttar Pradesh, India

S. Binwal Institute for Plasma Research, Bhat Village, Gujarat, India; Jamia MilliaIslamia, New Delhi, Delhi, India

Sonu Bishnoi Sensor and Optoelectronics Research Group (SORG), ElectricalEngineering Department, Indian Institute of Technology Patna, Bihar, India

Dhrubes Biswas Advanced Technology Development Centre, Indian Institute ofTechnology Kharagpur, Kharagpur, West Bengal, India; E&ECE, IIT Kharagpur,Kharagpur, West Bengal, India

M. S. Bobji Indian Institute of Science, Bengaluru, India

Pooja Bohara Nanoscale Devices, VLSI Circuit and System Design Laboratory,Electrical Engineering, Indian Institute of Technology Indore, Simrol, Indore, India

Gouranga Bose ICFAI Foundation for Higher Education University, Dontanpally,Hyderabad, Telangana, India

Apurba Chakraborty Department of ECE, NIT Agartala, Barjala, Jirania, India

Chanchal Solid State Physics Laboratory, Defence Research & DevelopmentOrganization, New Delhi, India

Subhash Chander Solid State Physics Laboratory, Timarpur, Delhi, India

K. Chandhok Solid State Physics Laboratory, Timarpur, Delhi, India

xxviii Contributors

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Edward Y. Chang Department of Materials Science and Engineering, NCTU,Hsinchu, Taiwan; International College of Semiconductor Technology, NCTU,Hsinchu, Taiwan

Kausturi Chatterjee Centre of Advanced Research in Renewable Energy andSensor Technology, Kolkata, West Bengal, India

Nithin Chatterji Department of Electrical Engineering, Indian Institute ofTechnology Bombay, Powai, Mumbai, Maharashtra, India

Avik Chattopadhyay Radio Physics and Electronics Department, University ofCalcutta, Kolkata, India

Kalyan Kumar Chattopadhyay Thin Film & Nanoscience Laboratory,Department of Physics, Jadavpur University, Kolkata, India

Sanatan Chattopadhyay Department of Electronic Science, University ofCalcutta, Kolkata, West Bengal, India

N. Chaturvedi Birla Institute of Technology & Science Pilani, Pilani, Rajasthan,India; CSIR-Central Electronics Engineering Research Institute, Pilani, Rajasthan,India

Rupesh Kumar Chaubey New Delhi, India; Solid State Physics Laboratory,Timarpur, New Delhi, India

Nahid Chaudhary New Delhi, India

S. P. Chaudhaury Solid State Physics Laboratory, Timarpur, Delhi, India

Tapas K. Chaudhuri Department of Applied Physics, SVNIT, Surat, Gujarat,India

A. Chauhan CSIR-Central Electronics Engineering Research Institute, Pilani,Rajasthan, India; Optoelectronics Devices Group, CSIR-Central ElectronicsEngineering Research Institute, Pilani, India

Rajneesh Chaurasiya Department of Physics, Center of Solar Energy, IndianInstitute of Technology Jodhpur, Jodhpur, India

Dennis Cherian Laboratory of Organic Electronics, Linköping University,Norrköping, Sweden

Saima Cherukat Department of Electrical Engineering, National Centre forPhotovoltaic Research and Education (NCPRE), Indian Institute of TechnologyBombay, Mumbai, India

Jin Cho GLOBALFOUNDRIES Inc., Santa Clara, CA, USA

Sonalee Chopra New Delhi, India

S. K. Choudhury Gangadhar Meher University, Sambalpur, Odisha, India

Contributors xxix

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Arun Singh Chouhan Centre for Nano Science and Engineering, Indian Instituteof Science, Bengaluru, India

S. Chouhan Department of Electrical Engineering, Indian Institute of TechnologyBombay, Mumbai, India

Abhilasha Chouksey Solid State Physics Laboratory, Timarpur, Delhi, India

Basudev Nag Chowdhury Centre for Research in Nanoscience andNanotechnology (CRNN), University of Calcutta, Salt Lake City, Kolkata, WestBengal, India

Sandeep Dalal Solid State Physics Laboratory, Timarpur, Delhi, India

Surya Shankar Dan Department of Electrical and Electronics Engineering, BirlaInstitute of Technology and Science Pilani, Hyderabad, Telangana, India

Amal Das Microelectronics and MEMS Laboratory, Department of ElectricalEngineering, IIT Madras, Chennai, India

Arijit Das Bharat Electronics Limited, Bangalore, India

Bhaskar Das Indian Institute of Technology Bombay, Powai, Mumbai,Maharashtra, India

Bijoy Krishna Das Department of Electrical Engineering, IIT Madras, Chennai,India

Gourab Das Centre of Excellence for Green Energy and Sensor Systems, IndianInstitute of Engineering Science and Technology, Shibpur, Howrah, India

Kailash Chandra Das National Institute of Technology Rourkela, Rourkela,Odisha, India

Pintu Das Department of Physics, Indian Institute of Technology Delhi, HauzKhas, India

S. C. Das Indian Institute of Science Education and Research, Mohonanpur,Nadia, Kolkata, West Bengal, India

Subhashis Das School of Computing and Electrical Engineering, Indian Instituteof Technology Mandi, Mandi, Himachal Pradesh, India

T. D. Das Department of Basic and Applied Science, National Institute ofTechnology, Yupia, Arunachal Pradesh, India

Amitava DasGupta Microelectronics and MEMS Laboratory, Department ofElectrical Engineering, Indian Institute of Technology Madras, Chennai, India

Nandita DasGupta Microelectronics and MEMS Laboratory, Department ofElectrical Engineering, Indian Institute of Technology Madras, Chennai, India

xxx Contributors

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Aneesh Dash Centre for Nano Science and Engineering, Indian Institute ofScience, Bengaluru, India

G. N. Dash School of Physics, Sambalpur University, Burla, Sambalpur, Odisha,India

Emona Datta Electronic Science Department, University of Calcutta, Kolkata,India

K. G. Deepa Interdisciplinary Centre for Energy Research (ICER), Indian Instituteof Science, Bengaluru, India

Verma Devendra Solid State Physics Laboratory, Timarpur, New Delhi, India

S. Dhakad CSIR-Central Electronics Engineering Research Institute, Pilani,Rajasthan, India

S. Dhall Department of Physics, Indian Institute of Technology, Hauz Khas, NewDelhi, India

Shivani Dhall Thin Film Laboratory, Department of Physics, Indian Institute ofTechnology Delhi, Hauz Khas, India

Leela Dhar Solid State Physics Lab, Timarpur, Delhi, India

Rajdeep Dhar Department of Electrical Engineering, Indian Institute ofTechnology Madras, Chennai, India

S. Dhar Department of Electronic Science, University of Calcutta, Kolkata, India

Hrishikesh Dhasmana Amity Institute for Advanced Research and Studies(Materials and Devices) and Amity Institute of Renewable and Alternative Energy,Amity University, Noida, Uttar Pradesh, India

A. B. Dhaulakhandi Office of Director General, Microelectronic Devices andComputational Systems, New Delhi, India

S. K. Dhawan CSIR-National Physical Laboratory, New Delhi, India

Ambesh Dixit Department of Physics, Indian Institute of Technology Jodhpur,Jodhpur, India; Center for Solar Energy, Indian Institute of Technology Jodhpur,Jodhpur, Rajasthan, India

Hemant Dixit GLOBALFOUNDRIES Engineering Private Limited, Bengaluru,India

Shiv Kumar Dixit Department of Electronic Science, University of Delhi, NewDelhi, India; Manav Rachna University, Faridabad, Haryana, India

Tejendra Dixit Molecular and Nanoelectronics Research Group (MNRG),Department of Electrical Engineering, IIT Indore, Indore, Madhya Pradesh, India

Contributors xxxi

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Avashesh Dubey Semiconductor Device Research Laboratory, Department ofElectronic Science, University of Delhi, New Delhi, India

Debashis Dutta Ministry of Electronics and Information Technology,Government of India, New Delhi, India

Gourab Dutta Microelectronics and MEMS Laboratory, Department of ElectricalEngineering, Indian Institute of Technology Madras, Chennai, India

Shankar Dutta Solid State Physics Laboratory (DRDO), Timarpur, New Delhi,India

Soumya Dutta Department of Electrical Engineering, Indian Institute ofTechnology Madras, Chennai, India

Sudipta Dutta Indian Institute of Science, Bengaluru, India

V. Dutta Centre for Energy Studies, Indian Institute of Technology Delhi, NewDelhi, India

Eric Faulques Institut des Matériaux Jean Rouxel, Université de Nantes, Nantes,France

Vinod Kumar Gandotra Solid State Physics Laboratory, Timarpur, Delhi, India

M. Ganesh Madhan Madras Institute of Technology, Anna University, Chennai,India

Utpal Gangopadhyay Centre of Advanced Research in Renewable Energy andSensor Technology, Kolkata, West Bengal, India

Udayan Ganguly Department of Electrical Engineering, Indian Institute ofTechnology Bombay, Mumbai, India

Gaurav Garg National Centre for Flexible Electronics, Indian Institute ofTechnology, Kanpur, Uttar Pradesh, India

Meenu Garg Department of Electronics and Communication Engineering, PunjabEngineering College (Deemed to be University), Chandigarh, India

Preeti Garg Solid State Physics Laboratory, Timarpur, Delhi, India; IndianInstitute of Technology, Hauzkhas, New Delhi, India

Priyanka Garg Malaviya National Institute of Technology, Jaipur, India

Vivek Garg Hybrid Nanodevice Research Group (HNRG), Electrical Engineering,Indian Institute of Technology, Indore, India

Garima Solid State Physics Laboratory, Timarpur, Delhi, India

Shailendra Kumar Gaur Solid State Physics Laboratory, Timarpur, Delhi, India

xxxii Contributors

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Khyati Gautam Department of Electronic Science, University of Delhi, NewDelhi, India

Punyabrata Ghatak Ministry of Electronics and Information Technology,Government of India, New Delhi, India

Prashant R. Ghediya Department of Physics, Marwadi University, Rajkot,Gujarat, India

Saptarsi Ghosh Solid State Physics Laboratory, Timarpur, Delhi, India; SSPL,DRDO, New Delhi, India

Subhasis Ghosh School of Physical Sciences, Jawaharlal Nehru University,Munirka, New Delhi, Delhi, India

Surya Prakash Ghosh National Institute of Technology Rourkela, Rourkela,Odisha, India

Vinita Gond Solid State Physics Lab, Timarpur, Delhi, India

Anshu Goyal Solid State Physics Laboratory, Defence Research & DevelopmentOrganization, Timarpur, New Delhi, India

Umakant Goyal Solid State Physics Laboratory, Timarpur, Delhi, India

Rakhi Grover Amity Institute of Advanced Research and Studies (Materials andDevices), Amity Institute of Renewable and Alternative Energy, Amity University,Noida, India

D. V. Santhosh Kumar Gunapu Department of Electrical Engineering, IndianInstitute of Technology Hyderabad, Kandi, Sangareddy, Telangana, India

Ankur Gupta Centre for Applied Research in Electronics, IIT—Delhi, NewDelhi, India

Ashish Gupta National Centre for Flexible Electronics, Kanpur, India

Dipti Gupta IITB-Monash Research Academy, Indian Institute of TechnologyBombay, Powai, Mumbai, India; Department of Metallurgical Engineering andMaterials Science, Indian Institute of Technology Bombay, Powai, Mumbai, India

Komal Gupta Solid State Physics Laboratory, Defence Research & DevelopmentOrganisation, Timarpur, New Delhi, India

M. Gupta Semiconductor Device Research Laboratory, Department of ElectronicScience, University of Delhi, New Delhi, India

Mridula Gupta Department of Electronic Science, University of Delhi SouthCampus, New Delhi, India; Semiconductor Device Research Laboratory,Department of Electronic Science, University of Delhi South Campus, New Delhi,India

Contributors xxxiii

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Nidhi Gupta Solid State Physics Laboratory (DRDO), Timarpur, Delhi, India;Amity Institute of Advance Research and Studies (Material & Devices) & AmityInstitute of Renewable and Alternative Energy, Amity University Uttar Pradesh,Noida, Uttar Pradesh, India

Parul Gupta Solid State Physics Laboratory, Timarpur, Delhi, India

Sudha Gupta Solid State Physics Laboratory, Defence Research & DevelopmentOrganization, New Delhi, India

Vaibhav Gupta Department of Electrical and Electronics Engineering, BirlaInstitute of Technology and Science Pilani, Hyderabad, Telangana, India

Vinay Gupta Department of Physics and Astrophysics, University of Delhi, NewDelhi, India

A. K. Hafiz Jamia Millia Islamia, New Delhi, India

Najeeb-ud-Din Hakim National Institute of Technology Srinagar, Srinagar,Jammu and Kashmir, India

Asish Hazra Department of Electronics and Communication Engineering,National Institute of Technology, Yupia, Arunachal Pradesh, India; Department ofElectronics and Communication Engineering, National Institute of Technology,Papum Pare, Arunachal Pradesh, India

Kirankumar Hiremath Department of Mathematics, Indian Institute ofTechnology Jodhpur, Jodhpur, India

Mushahid Husain Department of Physics, Jamia Millia Islamia, New Delhi, India

Samina Husain Centre for Nanoscience and Nanotechnology, Jamia MilliaIslamia, New Delhi, India

S. S. Islam New Delhi, India

M. Islam Solid State Physics Lab, Timarpur, Delhi, India

S. Sundar Kumar Iyer Department of Electrical Engineering and Samtel Centrefor Display Technologies, Indian Institute of Technology, Kanpur, India

Alok Jain Solid State Physics Laboratory, Timarpur, Delhi, India

Deepti Jain Solid State Physics Laboratory, Timarpur, Delhi, India

Kapil Kumar Jain Solid State Physics Laboratory (DRDO), Timarpur, Delhi,India

Neelu Jain Department of Electronics and Communication Engineering, PunjabEngineering College (Deemed to be University), Chandigarh, India

xxxiv Contributors

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Neeraj Jain Solid State Physics Laboratory, DRDO, Timarpur, Delhi, India

Sumit Jain Solid State Physics Laboratory, Timarpur, New Delhi, Delhi, India

V. K. Jain Amity Institute for Advanced Research and Studies (Materials andDevices) and Amity Institute of Renewable and Alternative Energy, AmityUniversity, Noida, Uttar Pradesh, India

Pramila Jakhar Molecular and Nanoelectronics Research Group (MNRG),Discipline of Electrical Engineering, Indian Institute of Technology Indore, Indore,Madhya Pradesh, India

D. Jamwal Department of Electronics, University of Jammu, Jammu, Jammu andKashmir, India

Vijay Janyani Department of Electronics and Communication Engineering,Malaviya National Institute of Technology Jaipur, Jaipur, India

Rajesh Kumar Jat Solid State Physics Laboratory, Timarpur New Delhi, India

Himanshi Jauhari Amity Institute of Advanced Research and Studies (Materialsand Devices), Amity Institute of Renewable and Alternative Energy, AmityUniversity, Noida, India

Madhaiyan Jayasakthi Crystal Growth Centre, Anna University, Chennai, TamilNadu, India

Pika Jha Solid State Physics Laboratory, Timarpur, Delhi, India

Rajesh Kumar Jha Department of Electronics and Communication, IndianInstitute of Information Technology-Allahabad, Allahabad, Uttar Pradesh, India

Ashish Jindal Solid State Physics Laboratory, Timarpur, Delhi, India

Svetlana P. Jose National Centre for Flexible Electronics, Kanpur, India

J. K. Joshi Institute for Plasma Research, Bhat Village, Gujarat, India

Monika Joshi Amity Institute of Nanotechnology, Amity University, Noida, UttarPradesh, India

Mukesh P. Joshi Laser Materials & Processing Division, Raja Ramanna Centerfor Advanced Technology, Indore, MP, India

P. K Khanna CSIR-Central Electronics Engineering Research Institute, Pilani,Rajasthan, India

D. K Kharbanda CSIR-Central Electronics Engineering Research Institute,Pilani, Rajasthan, India

Ramesh K. Kakkerla Department of Materials Science and Engineering, NCTU,Hsinchu, Taiwan

Contributors xxxv

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Prabakaran Kandasamy Crystal Growth Centre, Anna University, Chennai,Tamil Nadu, India

Atul Kapil Department of Physics, Career Point University, Hamirpur, HimachalPradesh, India

Ashok K. Kapoor Solid State Physics Laboratory, Defence Research &Development Organization, Timarpur, New Delhi, India

Avinashi Kapoor Department of Electronic Science, University of Delhi SouthCampus, New Delhi, India; Department of Electronic Science, University of Delhi,New Delhi, India

Sonalee Kapoor Solid State Physics Laboratory, Timarpur, Delhi, India

Jyoti Prakash Kar National Institute of Technology Rourkela, Rourkela, Odisha,India

S. K. Karkari Institute for Plasma Research, Bhat Village, Gujarat, India

S. Karmalkar Electrical Engineering Department, Indian Institute of TechnologyMadras, Chennai, India

Karuppasamy Department of Electronics and Instrumentation, BharathiarUniversity, Coimbatore, Tamil Nadu, India

Upendra Kashniyal Department of Electronics and Communication,Shambhunath Institute of Engineering and Technology, Allahabad, India

Monica Katiyar National Centre for Flexible Electronics, Indian Institute ofTechnology, Kanpur, Uttar Pradesh, India; Material Science and Engineering,Indian Institute of Technology, Kanpur, Uttar Pradesh, India

Davinder Kaur Indian Institute of Technology Roorkee, Roorkee, India

Maninder Kaur CSIR-Central Electronics Engineering Research Institute, Pilani,Rajasthan, India

Ravinder Kaur Deen Dayal Upadhyaya College, Dwarka, New Delhi, India;Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi,New Delhi, India

Sukhkirandeep Kaur Department of Computer Science & Engineering, NationalInstitute of Technology, Hazratbal, Srinagar, India

Vishakha Kaushik Department of Physics, Indian Institute of Technology Delhi,Hauz Khas, India

Ashish Kumar Keshari Department of Applied Physics, Gautam BuddhaUniversity, Greater Noida, India

Ayub Khan Department of Mathematics, Jamia Millia Islamia, New Delhi, India

xxxvi Contributors

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Md Arif Khan Hybrid Nanodevice Research Group (HNRG), ElectricalEngineering, Indian Institute of Technology Indore, Simrol, Indore, India; LowPower Nanoelectronics Research Group, Electrical Engineering, Indian Institute ofTechnology Indore, Simrol, Indore, India

Zaheer Ahmed Khan Semiconductor Laboratory, Department of Space,Chandigarh, Punjab, India

Ayush Khandelwal Microelectronics and MEMS Laboratory, Department ofElectrical Engineering, Indian Institute of Technology Madras, Chennai, India

Suraj P. Khanna CSIR-National Physical Laboratory, New Delhi, India

Manika Khanuja New Delhi, India

Irfan M. Khorakiwala Department of Electrical Engineering, Indian Institute ofTechnology Bombay, Powai, Mumbai, Maharashtra, India

Khushbu CSIR—Central Electronics Engineering Research Institute, Pilani,Rajasthan, India

Nisha Kodan Thin Film Laboratory, Department of Physics, Indian Institute ofTechnology, New Delhi, India

Gupta Komal Solid State Physics Laboratory, Timarpur, New Delhi, India

Vamsi K. Komarala Indian Institute of Technology Delhi, New Delhi, India

Aniruddha Konar GLOBALFOUNDRIES Engineering Private Limited,Bengaluru, India

Anil Kottantharayil Department of Electrical Engineering, National Centre forPhotovoltaic Research and Education (NCPRE), Indian Institute of TechnologyBombay, Mumbai, India

Sakshi Koul National Institute of Technology Srinagar, Srinagar, Jammu andKashmir, India

S. K. Koul Solidstate Physics Laboratory, New Delhi, India

Abhinav Kranti Low Power Nanoelectronics Research Group, ElectricalEngineering, Indian Institute of Technology Indore, Simrol, Indore, India;Discipline of Electrical Engineering, Indian Institute of Technology Indore, Simrol,Indore, India

Krishnamanohara National Centre for Flexible Electronics, Kanpur, India

Baskar Krishnan Crystal Growth Centre, Anna University, Chennai, India;Manonmaniam Sundaranar University, Tirunelveli, India

Maciej Krwaczyk Department of Physics, Adam Mickiewicz University inPoznań, Poznań, Poland

Contributors xxxvii

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Amit Kumar Academy of Scientific and Innovative Research, Taramani, Chennai,India; CSIR-Central Electronics Engineering Research Institute, Pilani, Rajasthan,India; Amity Institute for Advanced Research and Studies (Materials and Devices)and Amity Institute of Renewable and Alternative Energy, Amity University,Noida, Uttar Pradesh, India

Anil Kumar Solid State Physics Laboratory, Timarpur, New Delhi, Delhi, India;Department of Electrical Engineering, Indian Institute of Technology Bombay,Powai, Mumbai, Maharashtra, India

Ashish Kumar Department of Electronics and Communication Engineering,Malaviya National Institute of Technology Jaipur, Jaipur, India

Deepak Kumar Solid State Physics Laboratory, Timarpur, Delhi, India;Department of Physics and Astrophysics, University of Delhi, New Delhi, Delhi,India

Gaurav Kumar CSIR-National Physical Laboratory, New Delhi, India; Academyof Scientific and Innovative Research, CSIR-National Physical Laboratory(Campus), New Delhi, India

J. Kumar Crystal Growth Centre, Anna University, Chennai, India

Jitendra Kumar Solid State Physics Lab, Timarpur, Delhi, India

Manish Kumar Pohang Accelerator Laboratory, POSTECH, Pohang, SouthKorea

Manoj Kumar Solid State Physics Laboratory, Timarpur, Delhi, India

Niraj Kumar Solid State Physics Laboratory, Timarpur New Delhi, India

Piyush Kumar National Centre for Flexible Electronics, Kanpur, India

Pramod Kumar Solid State Physics Laboratory, Timarpur, Delhi, India

Prateek Kumar Solid State Physics Laboratory, Timarpur New Delhi, India

Rashmi Ranjan Kumar Sensors & Optoelectronics Research Group (SORG),Discipline of Electrical Engineering, Indian Institute of Technology Patna, Patna,Bihar, India

Sachin Kumar Department of Physics, Gargi College, New Delhi, India;Department of Physics & Astrophysics, University of Delhi, New Delhi, Delhi,India

Sanjeev Kumar Department of Applied Sciences, Punjab Engineering College(Deemed to be University), Chandigarh, India; Solid State Physics Laboratory,Defence Research & Development Organisation, Timarpur, New Delhi, India

Shailendra Kumar Raja Ramanna Center for Advanced Technology, Indore,India

xxxviii Contributors

Page 39: Springer Proceedings in Physics978-3-319-97604... · 2019-01-31 · The series Springer Proceedings in Physics, founded in 1984, is devoted to timely reports of state-of-the-art developments

Sunil Kumar Department of Physics, Indian Institute of Technology Kanpur,Kanpur, India; National Centre for Flexible Electronics, Indian Institute ofTechnology Kanpur, Kanpur, India

Sushil Kumar Center for Applied Research in Electronics, Indian Institute ofTechnology Delhi, New Delhi, India

Vivek Kumar Amity Institute for Advanced Research and Studies (Materials andDevices) and Amity Institute of Renewable and Alternative Energy, AmityUniversity, Noida, Uttar Pradesh, India

Chandni Kumari Department of Physics, Indian Institute of Technology Jodhpur,Jodhpur, India

Indu Kumari Indian Institute of Technology, Mandi, India

N. Kumari Department of Physics, Indian Institute of Technology, Hauz Khas,New Delhi, India

Reena Kumari National Physical Laboratory, CSIR-Network of Institutes forSolar Energy, New Delhi, India

Vandana Kumari Department of Electronics Science, University of Delhi SouthCampus, New Delhi, India; Department of Electronics, Maharaja Agrasen College,University of Delhi, New Delhi, India; Department of Electronics Science,University of Delhi, New Delhi, India

Sandeep Kumbhar National Centre for Photovoltaic Research and Education, IITBombay, Powai, India

P. Kumbhare Department of Electrical Engineering, Indian Institute ofTechnology Bombay, Mumbai, India

Rajender Singh Kundu Department of Applied Physics, Guru JambheshwarUniversity of Science and Technology, Hisar, India

Sreevatsa Kurudi Department of Electrical Engineering, IIT Madras, Chennai,India

Ranjay Laha Bharat Electronics Limited, Bangalore, India

Robert Laishram Solid State Physics Laboratory, Timarpur, New Delhi, Delhi,India

S. S. Lamba Solid State Physics Lab, Timarpur, Delhi, India

Sneh Lata Solid State Physics Laboratory, Timarpur New Delhi, India

T. R. Lenka Microelectronics and VLSI Design Group, Department of Electronicsand Communication Engineering, National Institute of Technology Silchar, Assam,India

Contributors xxxix

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Jyi-Tsong Lin Department of Electrical Engineering, National Sun Yat-SenUniversity, Kaohsiung, Taiwan, Republic of China

Karunakaran Logesh Department of Electrical Engineering, Indian Institute ofTechnology Madras, Chennai, India

Kamal Lohani Solid State Physics Laboratory, Timarpur, Delhi, India

Vandna Luthra Department of Physics, Gargi College, New Delhi, India; GargiCollege, University of Delhi, New Delhi, India

Madhulika Department of Electronics and Communication Engineering, PunjabEngineering College (Deemed to be University), Chandigarh, India

Somna Mahajan Solid State Physics Laboratory, Timarpur, Delhi, India

Supratim Maity Thin Film & Nanoscience Laboratory, Department of Physics,Jadavpur University, Kolkata, India

Ameen Majeed Department of Electronics and Communication Engineering,College of Engineering Munnar, Munnar, Kerala, India

Indranil Mal Department of Electronics and Communication Engineering, PDPMIndian Institute of Information Technology, Design and Manufacturing, Jabalpur,Madhya Pradesh, India

Amit Malik Solid State Physics Laboratory, Timarpur, Delhi, India

Abhijit Mallik Electronic Science Department, University of Calcutta, Kolkata,India

Rachna Manchanda Solid State Physics Laboratory, Defence Research &Development Organization, New Delhi, India

Prashanth Kumar Manda Department of Electrical Engineering, Indian Instituteof Technology Madras, Chennai, India

Ratan Mandal School of Energy Studies, Jadavpur University, Kolkata, W.B,India

J. Mani Department of Nuclear Physics, University of Madras, Chennai, TamilNadu, India

Prashanth Paramahans Manik Global Foundries, Bengaluru, India

N. Manikandan Department of Electronics and Instrumentation, BharathiarUniversity, Coimbatore, Tamil Nadu, India

Krishna Manohara National Centre for Flexible Electronics, Indian Institute ofTechnology, Kanpur, Uttar Pradesh, India

xl Contributors

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Rumysa Manzoor CSIR-National Physical Laboratory, New Delhi, India;Department of Electrical Engineering, IIT Delhi, New Delhi, India

R. Mariyal Jebasty Department of Medical Physics, Anna University, Chennai,India

Kurias K. Markose Department of Physics, Cochin University of Science andTechnology, Kochi, India; Department of Physics, Cochin University of Scienceand Technology, Kalamassery, Cochin, Kerala, India

Manish Mathew Optoelectronics Devices Group, CSIR-Central ElectronicsEngineering Research Institute, Pilani, India; Optoelectronics and MOEMS Group,CSIR-CEERI, Pilani, India

Jayasakthi Mathiyan Crystal Growth Centre, Anna University, Chennai, India

Narasimha Rao Mavilla Global Foundries, Bengaluru, India

Aklesh Meena Solid State Physics Laboratory, Timarpur, Delhi, India

Vijay Singh Meena Solid State Physics Laboratory, Timarpur, Delhi, India

Jaya Sandhya Meenakshinathan National Centre for Flexible Electronics, IndianInstitute of Technology, Kanpur, Uttar Pradesh, India

B. R. Mehta Thin Film Laboratory, Department of Physics, Indian Institute ofTechnology Delhi, Hauz Khas, New Delhi, India; Department of Physics, IndianInstitute of Technology Delhi, New Delhi, India

D. S. Mehta Department of Physics, IIT Delhi, New Delhi, India

Roohie Naaz Mir Department of Computer Science & Engineering, NationalInstitute of Technology, Hazratbal, Srinagar, India

Meena Mishra Solid State Physics Laboratory, Timarpur, Delhi, India

S. Mishra CSIR-Central Electronics Engineering Research Institute, Pilani,Rajasthan, India

Sukalpa Mishra Electrical Engineering Department, Indian Institute ofTechnology Madras, Chennai, India

Y. Mohammed Aneesh VIT University, Chennai, India

Shabbir Mohammed Solid State Physics Laboratory, Timarpur, Delhi, India

Akanksha Mohan National Centre for Flexible Electronics, Indian Institute ofTechnology, Kanpur, Uttar Pradesh, India

D. K. Mohanty Solid State Physics Laboratory, Timarpur, Delhi, India

Contributors xli

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Y. N. Mohapatra Department of Physics, Indian Institute of Technology Kanpur,Kanpur, India; National Centre for Flexible Electronics, Indian Institute ofTechnology Kanpur, Kanpur, India; Materials Science Programme, Indian Instituteof Technology Kanpur, Kanpur, India

Som Mondal Department of Energy and Environment, TERI University, NewDelhi, India

Swapnil More Centre for Nano Science and Engineering (CeNSE), IndianInstitute of Science, Bengaluru, Karnataka, India

Dheeraj Motagi Bharat Electronics Limited, Bangalore, India

M. Mukherjee Adamas University, Kolkata, India

Shaibal Mukherjee Hybrid Nanodevice Research Group (HNRG), ElectricalEngineering, Indian Institute of Technology Indore, Simrol, Indore, India

Swarnadip Mukherjee Department of Electrical Engineering, Indian Institute ofTechnology Bombay, Powai, Mumbai, India

Ravindra Mukhiya CSIR-Central Electronics Engineering Research Institute(CEERI), Pilani, Rajasthan, India; Academy of Scientific and Innovative Research(AcSIR), Chennai, India

Sumita Mukhopadhyay Centre of Excellence for Green Energy and SensorSystems, Indian Institute of Engineering Science and Technology, Shibpur,Howrah, India

Bhaskaran Muralidharan Department of Electrical Engineering, Indian Instituteof Technology Bombay, Powai, Mumbai, India

R. Muralidharan Centre for Nano Science and Engineering, Indian Institute ofScience, Bangalore, India

S. Muruganand Department of Electronics and Instrumentation, BharathiarUniversity, Coimbatore, Tamil Nadu, India

H. C. Nagaraj ECE Department, Nitte Meenakshi Institute of Technology,Govindapura, Gollahalli, Yelahanka, Bangalore, India

Venkateshan Nagarajan Department of Materials Science and Engineering,NCTU, Hsinchu, Taiwan

A. K. Naik Centre for Nano Science and Engineering, Indian Institute of Science,Bengaluru, India

Akshay Naik Centre for Nano Science and Engineering (CeNSE), Indian Instituteof Science, Bengaluru, Karnataka, India

Binny Nair Department of Electrical Engineering (EE), Indian Institute ofTechnology Bombay, Mumbai, India

xlii Contributors

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Deleep R. Nair Microelectronics and MEMS Laboratory, Department of ElectricalEngineering, IIT Madras, Chennai, India

L. Nair Jamia Millia Islamia, New Delhi, Delhi, India

Pradeep Nair Department of Electrical Engineering, Indian Institute ofTechnology Bombay, Powai, Mumbai, Maharashtra, India

Pradeep R. Nair Department of Electrical Engineering, Indian Institute ofTechnology Bombay, Powai, Mumbai, Maharashtra, India

Vikas Nandal Department of Electrical Engineering, Indian Institute ofTechnology Bombay, Powai, Mumbai, India

Riddhi Nandi Department of Electrical Engineering, IIT Madras, Chennai, India

Rakhi Narang Department of Electronics, Sri Venkateswara College, Universityof Delhi, New Delhi, India

K. L. Narasimhan Department of Electrical Engineering (EE), Indian Institute ofTechnology Bombay, Mumbai, India; National Centre for Photovoltaic Researchand Education (NCPRE), Indian Institute of Technology Bombay, Mumbai, India

Nupur Navlakha Discipline of Electrical Engineering, Indian Institute ofTechnology Indore, Simrol, Indore, India

Subhasha Nigam Amity Institute of Biotechnology, Amity University, Noida,India

S. Nisha Bharat Electronics Limited, Bangalore, India

Radheshyam Nokhwal Solid State Physics Laboratory, Timarpur, Delhi, India

Chinmay N. Oak Department of Electrical Engineering and Samtel Centre forDisplay Technologies, Indian Institute of Technology, Kanpur, India

Ramjay Pa Solid State Physics Laboratory (DRDO), Timarpur, Delhi, India

Mohit Padhye Birla Institute of Technology and Science (BITS), Pilani,Rajasthan, India

Suman Pahal Centre for Nano Science and Engineering, Indian Institute ofScience, Bengaluru, India

Baishakhi Pal Centre of Advanced Research in Renewable Energy and SensorTechnology, Kolkata, West Bengal, India; Department of Physics, JadavpurUniversity, Kolkata, W.B, India

Prabir Pal CSIR-National Physical Laboratory, New Delhi, India;AcSIR-Academy of Scientific & Innovative Research, New Delhi, India; Academyof Scientific and Innovative Research, CSIR-National Physical Laboratory(Campus), New Delhi, India

Contributors xliii

Page 44: Springer Proceedings in Physics978-3-319-97604... · 2019-01-31 · The series Springer Proceedings in Physics, founded in 1984, is devoted to timely reports of state-of-the-art developments

Prem Pal MEMS and Micro/Nano Systems Laboratory, Department of Physics,Indian Institute of Technology Hyderabad, Kandi, Sangareddy, India

Ramjay Pal Solid State Physics Laboratory (DRDO), Timarpur, Delhi, India

Suchandan Pal Optoelectronics & MOEMS Group, CSIR-CEERI, Pilani,Rajasthan, India

I. A. Palani Mechatronics and Instrumentation Lab, Department of MechanicalEngineering, IIT Indore, Indore, Madhya Pradesh, India; Centre of Material Scienceand Engineering, IIT Indore, Indore, Madhya Pradesh, India

Abha Panchal Solid State Physics Laboratory, Timarpur, New Delhi, India

D. K. Panda Microelectronics and VLSI Design Group, Department ofElectronics and Communication Engineering, National Institute of Technology,Silchar, Assam, India

Awanish Pandeu Centre for Nano Science and Engineering, Indian Institute ofScience, Bengaluru, India

Akhilesh Pandey Solid State Physics Laboratory, Timarpur, Delhi, India; IndianInstitute of Technology Roorkee, Roorkee, India

Himanshu Pandey Department of Electronics and Communication Engineering,Punjab Engineering College (Deemed to be University), Chandigarh, India

Kamal P. Pandey Department of Electronics and Communication, ShambhunathInstitute of Engineering and Technology, Allahabad, India

Rajan Pandey GLOBALFOUNDRIES Engineering Private Limited, Bengaluru,India

Saurabh Kumar Pandey Sensors & Optoelectronics Research Group (SORG),Discipline of Electrical Engineering, Indian Institute of Technology Patna, Patna,Bihar, India; Sensor and Optoelectronics Research Group (SORG), ElectricalEngineering Department, Indian Institute of Technology Patna, Bihar, India

B. D. Pant Pilani, India

Arun Panwar Solid State Physics Laboratory, Timarpur, New Delhi, India

Ivan P. Parkin Department of Chemistry, University College London, London,UK

Yashoda Parmar Solid State Physics Laboratory, Timarpur, New Delhi, India

K. R. Pasupathy VIT University, Chennai, India

R. K. Paswan Microelectronics and VLSI Design Group, Department ofElectronics and Communication Engineering, National Institute of TechnologySilchar, Assam, India

xliv Contributors

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S. P. Pati National Institute of Science and Technology, Berhampur, Odisha, India

Snehanshu Patra Centre of Excellence for Green Energy and Sensor Systems,Indian Institute of Engineering Science and Technology, Shibpur, Howrah, India

S. R. Pattanaik National Institute of Science and Technology, Berhampur,Odisha, India

Amruta Pattnaik Department of Energy and Environment, TERI University, NewDelhi, India

Saswat Pattnaik National Institute of Technology Rourkela, Rourkela, Odisha,India

Nageswara Rao Pedapati Bharat Electronics Limited, Bangalore, India

C. Periasamy Malaviya National Institute of Technology Jaipur, Jaipur,Rajasthan, India

Koteswara Rao Peta Department of Electronic Science, University of Delhi, NewDelhi, India

Rekha Phadke ECE Department, Nitte Meenakshi Institute of Technology,Govindapura, Gollahalli, Yelahanka, Bangalore, India

Adhithan Pon Device Modeling Laboratory, School of Electrical & ElectronicsEngineering, SASTRA University, Thanjavur, Tamil Nadu, India

Kandasamy Prabakaran Crystal Growth Centre, Anna University, Chennai,Tamil Nadu, India

P. Pradeep National Centre for Photovoltaic Research and Education (NCPRE),Indian Institute of Technology Bombay, Mumbai, India; Department of EnergyScience and Engineering, Indian Institute of Technology Bombay, Mumbai, India

Siddham Pradeep Crystal Growth Centre, Anna University, Chennai, TamilNadu, India

Diana Pradhan National Institute of Technology Rourkela, Rourkela, Odisha,India

Janmejaya Pradhan College of Engineering Bhubaneswar, Bhubaneswas,Odisha, India

Nisha Prakash CSIR-National Physical Laboratory, New Delhi, India; Academyof Scientific and Innovative Research, CSIR-National Physical Laboratory(Campus), New Delhi, India

B. Prasad Department of Energy and Environment, TERI University, New Delhi,India

Contributors xlv

Page 46: Springer Proceedings in Physics978-3-319-97604... · 2019-01-31 · The series Springer Proceedings in Physics, founded in 1984, is devoted to timely reports of state-of-the-art developments

Mahanth Prasad Transducers and Actuators Group, CSIR-Central ElectronicsEngineering Research Institute (CEERI), Pilani, Rajasthan, India

Manda Prashanth Kumar Department of Electrical Engineering, Indian Instituteof Technology Madras, Chennai, India

Surender Pratap Department of Physics, Birla Institute of Technology & Science,Pilani, Pilani, Rajasthan, India

P. Prathap CSIR-National Physical Laboratory, New Delhi, India; Academy ofScientific and Innovative Research, CSIR-NPL Campus, New Delhi, India

T. Premkumar Department of Medical Physics, Anna University, Chennai, TamilNadu, India

Prerana Priydarshini N.S.T.L., Visakhapatnam, India

Deepak Punetha Sensors & Optoelectronics Research Group (SORG), Disciplineof Electrical Engineering, Indian Institute of Technology Patna, Patna, Bihar, India

Rajesh Punia Department of Applied Physics, Guru Jambheshwar University ofScience and Technology, Hisar, India

Srinivasan Raghavan Indian Institute of Science, Bengaluru, India

P. V. Raghavendra Department of Physics, Karnatak University, Dharwad, India;Department of Physics, SDM College of Engineering and Technology, Dharwad,India

Bindu Raina Crystal Growth & Materials Research Laboratory, Department ofPhysics, University of Jammu, Jammu, India

S. Raj Mohan Laser Materials & Processing Division, Raja Ramanna Center forAdvanced Technology, Indore, MP, India

Gokulnath Rajendran School of Electrical and Electronic Engineering, NanyangTechnological University, Singapore, Singapore; Technische Universität München,Munich, Germany

Thangaraj Rajesh Crystal Growth Centre, Anna University, Chennai, India

Shaveta Rajial Solid State Physics Laboratory (DRDO), Timarpur, Delhi, India

Rajiv Solid State Physics Laboratory, Timarpur, Delhi, India

M. S. Ramachandra Rao Nano Functional Materials Technology Centre,Materials Science Research Centre and Department of Physics, IIT Madras,Chennai, India

Ramakant Department of Electrical and Electronics Engineering, Birla Institute ofTechnology and Science Pilani, Hyderabad, Telangana, India

xlvi Contributors

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V. Ramakrishnan Indian Institute of Science Education and Research,Thiruvanthapuram, India

R. Raman Solid State Physics Laboratory, Defence Research & DevelopmentOrganization, New Delhi, India

Manoj K. Ramanathi Department of Electrical Engineering (EE), Indian Instituteof Technology Bombay, Mumbai, India

P. Ramesh Department of Electronics and Communication Engineering, Collegeof Engineering Munnar, Munnar, Kerala, India

R. Ramesh Device Modeling Laboratory, School of Electrical & ElectronicsEngineering, SASTRA University, Thanjavur, Tamil Nadu, India

Raju Ramesh Hunan University, Changsha, China

Kamaljit Rangra Academy of Scientific and Innovative Research, Taramani,Chennai, India; CSIR—Central Electronics Engineering Research Institute, Pilani,Rajasthan, India

Avvaru Venkata Narasimha Rao MEMS and Micro/Nano Systems Laboratory,Department of Physics, Indian Institute of Technology Hyderabad, Kandi,Sangareddy, India

Shyama Rath Department of Physics and Astrophysics, University of Delhi,Delhi, India

C. M. S. Rauthan CSIR-National Physical Laboratory, New Delhi, India;Academy of Scientific and Innovative Research, New Delhi, India

Anand Ravi Department of Electrical and Electronics Engineering, Birla Instituteof Technology and Science Pilani, Hyderabad, Telangana, India

D. S. Rawal Solid State Physics Laboratory, Timarpur, Delhi, India; Solid StatePhysics Laboratory, New Delhi, Delhi, India

J. S. Rawat Solid State Physics Laboratory, Timarpur, Delhi, India

Soma Ray Centre of Advanced Research in Renewable Energy and SensorTechnology, Kolkata, West Bengal, India; Centre of Excellence for Green Energyand Sensor System, Howrah, West Bengal, India

S. Rekha National Institute of Technology Karnataka, Surathkal, India

Arijit Bardhan Roy Centre of Excellence for Green Energy and Sensor Systems,Indian Institute of Engineering Science and Technology, Shibpur, Howrah, India

K. Sachdev Malaviya National Institute of Technology, Jaipur, India

Ahsana Sadaf Jamia Millia Islamia University, New Delhi, India

Contributors xlvii

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Viswas Sadasivan Department of Electronics and Communication Engineering,Amrita Vishwa Vidyapeetham, Amritapuri, India

Debolina Saha Centre of Excellence for Green Energy and Sensor Systems,Indian Institute of Engineering Science and Technology, Shibpur, Howrah, India

Praveen Sahoo Solid State Physics Laboratory, Timarpur, Delhi, India

Anurag Sahu Center for System Science, Indian Institute of Technology Jodhpur,Jodhpur, India

Ajay Kumar Saini Solid State Physics Laboratory, Defence Research &Development Organization, New Delhi, India

Basant Saini Department of Electronic Science, University of Delhi SouthCampus, New Delhi, India; Department of Electronic Science, University of Delhi,New Delhi, India

Hemant Saini New Delhi, India

Hemant Kumar Saini Solid State Physics Laboratory, Timarpur New Delhi, India

Navneet Kaur Saini Solid State Physics Laboratory, New Delhi, India

Vishwas Saini CSIR—Central Electronics Engineering Research Institute, Pilani,Rajasthan, India; CSIR—Indian Institute of Petroleum, Dehradun, Uttarakhand,India

Neha Sakhuja CeNSE, Indian Institute of Science, Bengaluru, Karnataka, India

D. P. Samajdar Department of Electronics and Communication Engineering,PDPM Indian Institute of Information Technology, Design and Manufacturing,Jabalpur, Madhya Pradesh, India

K. Sandeep National Centre for Photovoltaic Research and Education (NCPRE),Indian Institute of Technology Bombay, Mumbai, India

Sankaranarayanan Sanjay Crystal Growth Centre, Anna University, Chennai,Tamil Nadu, India

Barman Sanjeeev Solid State Physics Laboratory, Timarpur, New Delhi, India

Vavilapalli Durga Sankar Crystal Growth Centre, Anna University, Chennai,Tamil Nadu, India

Santhia Carmel Device Modeling Laboratory, School of Electrical & ElectronicsEngineering, SASTRA University, Thanjavur, Tamil Nadu, India

S. Santosh Kumar Pilani, India

Tarnija Sarao Department of Physics, Noida, Uttar Pradesh, India

xlviii Contributors

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Sanjay K. Sardana CSIR-National Physical Laboratory, New Delhi, India; IndianInstitute of Technology Delhi, New Delhi, India

Neha Sarin Department of Physics, Gargi College, New Delhi, India; Departmentof Physics & Astrophysics, University of Delhi, New Delhi, Delhi, India

Niladri Sarkar Department of Physics, Birla Institute of Technology & Science,Pilani, Pilani, Rajasthan, India

Ganapathy Sasikala Crystal Growth Centre, Anna University, Chennai, India

Bokka Satya Srinivas MEMS & Micro/Nano Systems Laboratory, Department ofPhysics, Indian Institute of Technology, Hyderabad, India

T. V. S. L. Satyavani N.S.T.L., Visakhapatnam, India

Rajeev Kumar Sawal Solid State Physics Laboratory, Timarpur, Delhi, India

Kanchan Saxena Amity Institute of Advanced Research and Studies (Materialsand Devices), Amity Institute of Renewable and Alternative Energy, AmityUniversity, Noida, India

Manoj Saxena Department of Electronics, Deen Dayal Upadhyaya College,University of Delhi, New Delhi, India

Raghvendra Sahai Saxena Solid State Physics Laboratory, Timarpur, Delhi,India; Solid State Physics Laboratory, Defence Research & DevelopmentOrganization, New Delhi, India

Renuka Saxena Solid State Physics Laboratory, Timarpur, Delhi, India

J. Schulze Indian Institute of Technology Bombay, Powai, Mumbai, Maharashtra,India

Madhu Seetharaman National Centre for Flexible Electronics, Indian Institute ofTechnology, Kanpur, Uttar Pradesh, India

S. K. Selvaraja Centre for Nano Science and Engineering, Indian Institute ofScience, Bengaluru, India

Brajendra S. Sengar Hybrid Nanodevice Research Group (HNRG), ElectricalEngineering, Indian Institute of Technology, Indore, India

A. E. Serebryannikov Department of Physics, Adam Mickiewicz University inPoznań, Poznań, Poland

C. Shalu Molecular and Nanoelectronics Research Group (MNRG), Discipline ofElectrical Engineering, IIT Indore, Indore, India

Abhineet Sharan Electronics and Communication Engineering, PDPM IndianInstitute of Information Technology, Design and Manufacturing, Jabalpur, India

Abhishek Sharma Solid State Physics Laboratory, Timarpur, Delhi, India

Contributors xlix

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Akash Sharma Solar Energy Research Laboratory, Department of AppliedPhysics, Indian Institute of Technology (Indian School of Mines), Dhanbad,Jharkhand, India; Centre of Excellence in Renewable Energy, Indian Institute ofTechnology (Indian School of Mines), Dhanbad, Jharkhand, India

Anup Kumar Sharma ECE Department, MNIT Jaipur, Jaipur, India

Ashok K. Sharma National Centre for Photovoltaic Research and Education, IITBombay, Powai, India; National Centre for Photovoltaic Research and Education(NCPRE), Indian Institute of Technology Bombay, Mumbai, India

B. L. Sharma Solid State Physics Laboratory, Timarpur, Delhi, India; Solid StatePhysics Laboratory, New Delhi, Delhi, India

Chandan Sharma Solid State Physics Laboratory, New Delhi, Delhi, India;Indian Institute of Technology Delhi, New Delhi, Delhi, India

Dipika Sharma Thin Film Laboratory, Department of Physics, Indian Institute ofTechnology, New Delhi, India

Jayasree Roy Sharma Centre of Excellence for Green Energy and SensorSystems, Indian Institute of Engineering Science and Technology, Shibpur,Howrah, India

Mahima Sharma Amity Institute of Nanotechnology, Amity University, Noida,India

Manish Sharma Department of Applied Phyiscs, Sharda University, GreaterNoida, India

N. Sharma CSIR-Central Electronics Engineering Research Institute, Pilani,Rajasthan, India; Malaviya National Institute of Technology Jaipur, Jaipur,Rajasthan, India

Navdeep Sharma Department of Applied Sciences, A P Goyal Shimla University,Shimla, Himachal Pradesh, India

Pankaj Sharma Hybrid Nanodevice Research Group (HNRG), ElectricalEngineering, Indian Institute of Technology Indore, Simrol, Indore, India

R. K. Sharma Solid State Physics Laboratory, Timarpur, Delhi, India; Solid StatePhysics Laboratory, New Delhi, Delhi, India; Solid State Physics Laboratory,Defence Research & Development Organization, New Delhi, India

Rajni Sharma CSIR-National Physical Laboratory, New Delhi, India

Renu Sharma Solid State Physics Laboratory, Timarpur, Delhi, India

Rishi Sharma CSIR-Central Electronics Engineering Research Institute (CEERI),Pilani, Rajasthan, India; Academy of Scientific and Innovative Research (AcSIR),Chennai, India

l Contributors

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Satinder K. Sharma School of Computing and Electrical Engineering, IndianInstitute of Technology Mandi, Mandi, Himachal Pradesh, India

Shailesh Narain Sharma Department of Physics, Noida, Uttar Pradesh, India

Sugandha Sharma Department of Electronic Science, University of Delhi SouthCampus, New Delhi, India

Sumit Sharma CSIR-Central Electronics Engineering Research Institute(CSIR-CEERI), Pilani, India; Rajiv Gandhi Proudyogiki Vishwavidyalaya, Bhopal,India

Swati Sharma Department of Chemistry, University of Rajasthan, Jaipur, India

Varun Sharma Solid State Physics Laboratory, Timarpur, Delhi, India; SolidState Physics Laboratory, Defence Research & Development Organization, NewDelhi, India

Vikas Sharma Malaviya National Institute of Technology, Jaipur, India; IndianInstitute of Technology Delhi, Hauz Khas, New Delhi, India

Shashikant N.S.T.L., Visakhapatnam, India

Shaveta Solid State Physics Laboratory (DRDO), Timarpur, Delhi, India

Ambika Shanker Shukla Indian Institute of Technology Bombay, Powai, India

Garima Shukla Government Engineering College (JEC), Jabalpur, MP, India

Mayoorika Shukla Molecular and Nanoelectronics Research Group (MNRG),Discipline of Electrical Engineering, Indian Institute of Technology Indore, Indore,Madhya Pradesh, India

Vivek Kumar Shukla Gautam Buddha University, Gautam Budh Nagar, UttarPradesh, India

Pradeep Siddham Crystal Growth Centre, Anna University, Chennai, India

Gaurav Siddharth Hybrid Nanodevice Research Group (HNRG), ElectricalEngineering, Indian Institute of Technology, Indore, India

Subhrajit Sikdar Department of Electronic Science, University of Calcutta,Kolkata, West Bengal, India

Aadesh P. Singh Thin Film Laboratory, Department of Physics, Indian Institute ofTechnology, New Delhi, India

Akash Singh Centre for Nano Science and Engineering, Indian Institute ofScience, Bengaluru, India; PDPM Indian Institute of Information Technology,Design and Manufacturing, Jabalpur, India

Anand Singh Solid State Physics Laboratory, Timarpur, New Delhi, Delhi, India

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Arun K. Singh Department of Electronics and Communication Engineering,Punjab Engineering College (Deemed to be University), Chandigarh, India

B. R. Singh Department of Electronics and Communication, Indian Institute ofInformation Technology-Allahabad, Allahabad, Uttar Pradesh, India

Budhi Singh Inter University Accelerator Centre, New Delhi, Delhi, India

D. N. Singh Indosolar Limited, Greater Noida, Uttar Pradesh, India

Harjinder Singh Crystal Growth & Materials Research Laboratory, Departmentof Physics, University of Jammu, Jammu, India

Inderpreet Singh Department of Electronics, SGTB Khalsa College, Universityof Delhi, New Delhi, India

Joginder Singh Department of Electronic Science, University of Delhi, NewDelhi, India

K. Singh CSIR-Central Electronics Engineering Research Institute, Pilani,Rajasthan, India

Kuldip Singh Optoelectronics Devices Group, CSIR-Central ElectronicsEngineering Research Institute, Pilani, India

Manjeet Singh Solid State Physics Laboratory, Timarpur, Delhi, India;Department of Applied Physics, Gautam Buddha University, Greater Noida, India

Manjri Singh CSIR-National Physical Laboratory, New Delhi, India; Academy ofScientific and Innovative Research, CSIR-National Physical Laboratory (Campus),New Delhi, India

Nilima Singh Solid State Physics Laboratory, Timarpur, Delhi, India; Solid StatePhysics Laboratory, Defence Research & Development Organization, New Delhi,India

Prashant Singh CSIR-National Physical Laboratory, New Delhi, India; Academyof Scientific and Innovative Research, CSIR-NPL Campus, New Delhi, India;Department of Electronics and Communication, Indian Institute of InformationTechnology-Allahabad, Allahabad, Uttar Pradesh, India

Pushpapraj Singh Center for Applied Research in Electronics, Indian Institute ofTechnology Delhi, New Delhi, India

R. P. Singh Solid State Physics Laboratory, Defence Research & DevelopmentOrganisation, Timarpur, New Delhi, India

Rajat Kumar Singh Department of Electronics and Communication, IndianInstitute of Information Technology-Allahabad, Allahabad, Uttar Pradesh, India

Rajendra Singh Indian Institute of Technology Delhi, New Delhi, Delhi, India

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Page 53: Springer Proceedings in Physics978-3-319-97604... · 2019-01-31 · The series Springer Proceedings in Physics, founded in 1984, is devoted to timely reports of state-of-the-art developments

Ranbir Singh Department of Chemical Engineering, POSTECH, Pohang, SouthKorea

Rohit Singh Hybrid Nanodevice Research Group (HNRG), ElectricalEngineering, Indian Institute of Technology Indore, Simrol, Indore, India; LowPower Nanoelectronics Research Group, Electrical Engineering, Indian Institute ofTechnology Indore, Simrol, Indore, India

Sankalp K. Singh Department of Materials Science and Engineering, NCTU,Hsinchu, Taiwan

Satyavir Singh Malaviya National Institute of Technology, Jaipur, India

Shubra Singh Crystal Growth Centre, Anna University, Chennai, Tamil Nadu,India

Simranjit Singh Amity Institute of Nanotechnology, Amity University, Noida,Uttar Pradesh, India

Subhash Singh Materials Science Programme, Indian Institute of TechnologyKanpur, Kanpur, India; National Centre for Flexible Electronics, Indian Institute ofTechnology Kanpur, Kanpur, India

Surinder P. Singh CSIR-National Physical Laboratory, New Delhi, India

V. K. Singh Solid State Physics Laboratory, Defence Research & DevelopmentOrganization, New Delhi, India

Vipul Singh Molecular and Nanoelectronics Research Group (MNRG), Disciplineof Electrical Engineering, Indian Institute of Technology Indore, Indore, MadhyaPradesh, India; Metallurgy Engineering and Material Science, Indian Institute ofTechnology Indore, Indore, Madhya Pradesh, India; Centre of Material Science andEngineering, IIT Indore, Indore, Madhya Pradesh, India

Bandana Singha Department of Energy Science and Engineering, Indian Instituteof Technology Bombay, Powai, Mumbai, Maharashtra, India

Monoj Kumar Singha Department of Instrumentation and Applied Physics,Indian Institute of Science, Bengaluru, India; Thermoelectric Materials and DeviceLaboratory, Department of Physics, Indian Institute of Science, Bengaluru, India

Soumendu Sinha CSIR-Central Electronics Engineering Research Institute(CEERI), Pilani, Rajasthan, India; Academy of Scientific and Innovative Research(AcSIR), Chennai, India

Goldy Slathia Crystal Growth & Materials Research Laboratory, Department ofPhysics, University of Jammu, Jammu, India

R. K. Soni Indian Institute of Technology, Hauzkhas, New Delhi, India

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K. P. Sreejith National Centre for Photovoltaic Research and Education, IITBombay, Powai, India; Department of Electrical Engineering, IIT Bombay, Powai,Mumbai, India

M. Sridharan Functional Nanomaterials & Devices Lab, SASTRA Deemed to beUniversity, Thanjavur, Tamil Nadu, India

A. Srinivas Kumar N.S.T.L., Visakhapatnam, India

Meenakshi Srivastav Solid State Physics Laboratory, Defence Research &Development Organization, New Delhi, India

Ritu Srivastav National Physical Laboratory, CSIR-Network of Institutes forSolar Energy, New Delhi, India

Meenakshi Srivastava Solid State Physics Laboratory, Timarpur, Delhi, India

Sanjay K. Srivastava CSIR-National Physical Laboratory, New Delhi, India;Academy of Scientific and Innovative Research, CSIR-NPL Campus, New Delhi,India

Vanya Srivastava Solid State Physics Laboratory, Defence Research &Development Organization, New Delhi, India

Surender Subburaj Crystal Growth Centre, Anna University, Chennai, India

Senthil Subramanian Hindustan College of Science and Technology, Agra, India

Subramanian Suguna Crystal Growth Centre, Anna University, Chennai, India

Subramanian Sumathi Crystal Growth Centre, Anna University, Chennai, India

Sanjaykumar R. Suranagi Department of Chemical Engineering, POSTECH,Pohang, South Korea

Surbhi Malaviya National Institute of Technology, Jaipur, India

Subburaj Surender Crystal Growth Centre, Anna University, Chennai, TamilNadu, India

S. K. Swain School of Physics, Sambalpur University, Burla, Sambalpur, Odisha,India

Veerla Swarnalatha MEMS and Micro/Nano Systems Laboratory, Department ofPhysics, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, India

R. Taliyan Birla Institute of Technology & Science, Pilani, Rajasthan, India

Siddharth Tallur Department of Electrical Engineering, Indian Institute ofTechnology Bombay, Powai, Mumbai, India

Amit Tanwar Pilani, India

Arun Tanwar Solid State Physics Laboratory, Timarpur, Delhi, India

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Amit Tewari IITB-Monash Research Academy, Indian Institute of TechnologyBombay, Powai, Mumbai, India

Shyamali Thakur Solidstate Physics Laboratory, New Delhi, India

R. Thangavel Solar Energy Research Laboratory, Department of Applied Physics,Indian Institute of Technology (Indian School of Mines), Dhanbad, Jharkhand,India; Centre of Excellence in Renewable Energy, Indian Institute of Technology(Indian School of Mines), Dhanbad, Jharkhand, India

Shay Tirosh Department of Chemistry, Centre for Nanotechnology & AdvancedMaterials, Bar-Ilan University, Ramat Gan, Israel

Monika Tomar Department of Physics and Astrophysics, University of Delhi,New Delhi, India; Department of Physics, Miranda House, University of Delhi,New Delhi, India

S. K. Tomer Solid State Physics Laboratory, Timarpur, Delhi, India

Chandra C. Tripathi University Institute of Engineering and Technology (UIET),Kurukshetra University, Kurukshetra, Haryana, India

Juliane Tripathi National Centre for Flexible Electronics, Kanpur, India

S. Juliane Tripathi National Centre for Flexible Electronics, Kanpur, India

Nilakantha Tripathy National Institute of Technology Rourkela, Rourkela,Odisha, India

P. R. Tripathy Gandhi Engineering College Bhubaneswar, Bhubaneswar, Odisha,India

Saha Tulana Solid State Physics Laboratory, Timarpur, New Delhi, India

Monika Tyagi Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia,New Delhi, India

Sami Ullha CSIR-Central Electronics Engineering Research Institute(CSIR-CEERI), Pilani, India; Jamia Millia Islamia, New Delhi, Delhi, India

Abhishek Upadhyay Indian Institute of Technology (IIT), Indore, MP, India

Rishibrind Kumar Upadhyay Department of Electronics, Acharya Narendra DevCollege, Delhi University, New Delhi, India

Upasana Semiconductor Device Research Laboratory, Department of ElectronicScience, University of Delhi, New Delhi, India

J. Vadivukkarasi Centre for Nano Science and Engineering, Indian Institute ofScience, Bengaluru, India

R. Vaid Department of Electronics, University of Jammu, Jammu, Jammu andKashmir, India

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Vandana CSIR-National Physical Laboratory, New Delhi, India; Academy ofScientific and Innovative Research, New Delhi, India

Siva Rama Krishna Vanjari Department of Electrical Engineering, IndianInstitute of Technology Hyderabad, Kandi, Sangareddy, Telangana, India

Deepak Varandani Department of Physics, Indian Institute of Technology Delhi,New Delhi, India; Department of Physics, Indian Institute of Technology Delhi,Hauz Khas, India

Manoj M. Varma Centre for Nano Science and Engineering, Indian Institute ofScience, Bengaluru, India

M. Lakshmi Varshika Department of Electrical and Electronics, Birla Institute ofTechnology and Science, Pilani, Hyderabad, India

Vishal Vashistha Department of Physics, Adam Mickiewicz University inPoznań, Poznań, Poland

T. Venugopala Rao N.S.T.L., Visakhapatnam, India

Abhishek Verma Amity Institute for Advanced Research and Studies (Materialsand Devices) and Amity Institute of Renewable and Alternative Energy, AmityUniversity, Noida, Uttar Pradesh, India

Daisy Verma Shaheed Mangal Pandey Government Girls Post Graduate College,Madhavpuram, Meerut, Uttar Pradesh, India

Devendra Verma Solid State Physics Laboratory, Defence Research &Development Organisation, Timarpur, New Delhi, India

Sudeep Verma Solid State Physics Laboratory, Timarpur, Delhi, India

Upkar K. Verma Department of Physics, Indian Institute of Technology Kanpur,Kanpur, India; National Centre for Flexible Electronics, Indian Institute ofTechnology Kanpur, Kanpur, India

Sanjay Vidhyadharan Department of Electrical and Electronics Engineering,Birla Institute of Technology and Science Pilani, Hyderabad, Telangana, India

R. Vidya Department of Medical Physics, Anna University, Chennai, Tamil Nadu,India

Alison E. Viegas Indian Institute of Science, Bengaluru, India; National Instituteof Technology Karnataka, Surathkal, India

Seeema Vinayak Solid State Physics Laboratory, New Delhi, Delhi, India; SolidState Physics Laboratory, Timarpur, Delhi, India

Vineeta Department of Physics and Astrophysics, University of Delhi, Delhi,India

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S. K. Vishvakarma Nanoscale Devices, VLSI Circuit and System DesignLaboratory, Electrical Engineering, Indian Institute of Technology Indore, Simrol,Indore, India

Ajay Kumar Visvkarma Solid State Physics Laboratory, Timarpur, Delhi, India

Isha Yadav Solid State Physics Laboratory, Timarpur, Delhi, India

R. P. Yadav Department of Electronics and Communication Engineering,Malaviya National Institute of Technology Jaipur, Jaipur, India

Tarun S. Yadav Department of Electrical Engineering (EE), Indian Institute ofTechnology Bombay, Mumbai, India; National Centre for Photovoltaic Researchand Education (NCPRE), Indian Institute of Technology Bombay, Mumbai, India

P. R. Yasasvi Gangavarapu Centre for Nano Science and Engineering, IndianInstitute of Science, Bengaluru, India

Hung W. Yu Department of Materials Science and Engineering, NCTU, Hsinchu,Taiwan

Saravanan Yuvaraja Amity Institute for Advanced Research and Studies(Materials and Devices) & Amity Institute of Renewable and Alternative Energy,Amity University, Noida, Uttar Pradesh, India

Arie Zaban Department of Chemistry, Centre for Nanotechnology & AdvancedMaterials, Bar-Ilan University, Ramat Gan, Israel

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