Upload
others
View
5
Download
0
Embed Size (px)
Citation preview
Springer Proceedings in Physics
Volume 215
The series Springer Proceedings in Physics, founded in 1984, is devoted to timelyreports of state-of-the-art developments in physics and related sciences. Typicallybased on material presented at conferences, workshops and similar scientificmeetings, volumes published in this series will constitute a comprehensiveup-to-date source of reference on a field or subfield of relevance in contemporaryphysics. Proposals must include the following:
– name, place and date of the scientific meeting– a link to the committees (local organization, international advisors etc.)– scientific description of the meeting– list of invited/plenary speakers– an estimate of the planned proceedings book parameters (number of pages/
articles, requested number of bulk copies, submission deadline).
More information about this series at http://www.springer.com/series/361
R. K. Sharma • D. S. RawalEditors
The Physicsof Semiconductor DevicesProceedings of IWPSD 2017
123
EditorsR. K. SharmaSolid State Physics LaboratoryDelhi, India
D. S. RawalSolid State Physics LaboratoryDelhi, India
ISSN 0930-8989 ISSN 1867-4941 (electronic)Springer Proceedings in PhysicsISBN 978-3-319-97603-7 ISBN 978-3-319-97604-4 (eBook)https://doi.org/10.1007/978-3-319-97604-4
Library of Congress Control Number: 2018951402
© Springer Nature Switzerland AG 2019This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or partof the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations,recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmissionor information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilarmethodology now known or hereafter developed.The use of general descriptive names, registered names, trademarks, service marks, etc. in thispublication does not imply, even in the absence of a specific statement, that such names are exempt fromthe relevant protective laws and regulations and therefore free for general use.The publisher, the authors and the editors are safe to assume that the advice and information in thisbook are believed to be true and accurate at the date of publication. Neither the publisher nor theauthors or the editors give a warranty, express or implied, with respect to the material contained herein orfor any errors or omissions that may have been made. The publisher remains neutral with regard tojurisdictional claims in published maps and institutional affiliations.
This Springer imprint is published by the registered company Springer Nature Switzerland AGThe registered company address is: Gewerbestrasse 11, 6330 Cham, Switzerland
Contents
Part I 2D Materials Organic Semiconductors and DisplayTechnologies
1 Enhanced Photodetection in Visible Region in rGO/GaNBased Hybrid Photodetector . . . . . . . . . . . . . . . . . . . . . . . . . . . 3Nisha Prakash, Gaurav Kumar, Manjri Singh, Prabir Pal,Surinder P. Singh and Suraj P. Khanna
2 ZigZag Phosphorene Nanoribbons Antidot—ElectronicStructure and Device Application . . . . . . . . . . . . . . . . . . . . . . . 7Santhia Carmel, Adhithan Pon, R. Rameshand Arkaprava Bhattacharyya
3 Calculation of Quantum Capacitance and Sheet Carrier Densityof Graphene FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15S. R. Pattanaik, Sriyanka Behera and G. N. Dash
4 Effect of Back Gate Voltage on Double Gate Single LayerGraphene Field-Effect Transistor with Improved ION . . . . . . . . 21Garima Shukla, Abhishek Upadhyay and S. K. Vishvakarma
5 Effects of Chemical Functionalization on Single-WalledCarbon Nanotubes by Mild Hydrogen Peroxide for PVApplications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29D. Jamwal, S. Dhall, N. Kumari and R. Vaid
6 Effect of Tip Induced Strain on Nanoscale Electrical Propertiesof MoS2-Graphene Heterojunctions . . . . . . . . . . . . . . . . . . . . . . 35Vishakha Kaushik, Deepak Varandani, Pintu Das and B. R. Mehta
7 Optimization of the Concentration of Molybdenum Disulfide(MoS2) for Formation of Atomically Thin Layers . . . . . . . . . . . 39Vineeta and Shyama Rath
v
8 Fabrication of 2D NEMS on Flexible Substrates for StrainEngineering in Sensing Applications . . . . . . . . . . . . . . . . . . . . . 45Swapnil More and Akshay Naik
9 Transition Metal Doped ZnS Monolayer: The First PrinciplesInsights . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49Rajneesh Chaurasiya and Ambesh Dixit
10 Tuning Resonant Wavelength of Silicon Micro-ring Resonatorwith Graphene . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57Aneesh Dash, J. Vadivukkarasi, S. K. Selvaraja and A. K. Naik
11 Effect of Diameter and Doping on Electronic Band Structureof Single-Walled Carbon Nanotubes . . . . . . . . . . . . . . . . . . . . . 61Anup Kumar Sharma and Swati Sharma
12 Limitations of Mott-Schottky Analysis for OrganicMetal-Insulator-Semiconductor Capacitors . . . . . . . . . . . . . . . . 69Manda Prashanth Kumar, Karunakaran Logesh and Soumya Dutta
13 Study on the Conventional Versus Photonic (IPL) Sinteringof Copper Nanoparticle (Cu NPs) Inks on Different FlexibleSubstrates . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75Svetlana P. Jose, Piyush Kumar, Chinmay Bapat, Ashish Gupta,Juliane Tripathi, Monica Katiyar and Y. N. Mohapatra
14 GO Nanosheets for Solar Assisted Dye Degradationin Aqueous Solution . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81Mahima Sharma, Kannikka Behl, Subhasha Nigamand Monika Joshi
15 Resonant and Non-resonant Solutions of the Non-linearVibration of SWCNTs Embedded in Viscous Elastic MatrixUsing KBM Method . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89Monika Tyagi, Ayub Khan, Mushahid Husain and Samina Husain
16 Broadband Photodetector with Lateral n-rGO/p+SiHeterojunction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99Manjri Singh, Gaurav Kumar, Nisha Prakash, Suraj P. Khanna,Prabir Pal and Surinder P. Singh
17 Role of MoS2 on the Electrical and Thermoelectric Propertiesof Bi2Te3 and Sb2Te3 Alloys . . . . . . . . . . . . . . . . . . . . . . . . . . . 105Mujeeb Ahmad, Deepak Varandani and B. R. Mehta
18 Temperature Dependent Open Circuit Voltage Variationof Organic Solar Cells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111Prashanth Kumar Manda, Rajdeep Dhar and Soumya Dutta
vi Contents
19 Effect of Pulsed Electric Field Annealing on P3HT: PCBMInverted Solar Cell Structure . . . . . . . . . . . . . . . . . . . . . . . . . . 117Chinmay N. Oak and S. Sundar Kumar Iyer
20 Towards High Performance Large Area Two ColorHybrid White Organic Light Emitting Diodes for LightingApplications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123Madhu Seetharaman, Asha Awasthi,Jaya Sandhya Meenakshinathan, Gaurav Garg, Akanksha Mohan,Krishna Manohara, Surya Bindu, Muralidharan Balakrishnanand Monica Katiyar
21 Surface Enhanced IR Absorption and Raman Detectionof Tryptophan Amino Acids Over Silver NanoislandsDeposited on Graphene . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133Preeti Garg, Praveen Sahoo, R. Raman and R. K. Soni
22 Synthesis, Characterization and Temperature Dependenceof Conductivity in Poly (o-toluidine) . . . . . . . . . . . . . . . . . . . . . 139Navdeep Sharma and Atul Kapil
23 Solvent Mixture Formulation for Inkjet Printable LightEmitting Polymer with Pixdro LP50-Ink Formulationfor Inkjet Printing of MEH: PPV . . . . . . . . . . . . . . . . . . . . . . . 149Svetlana P. Jose, Krishnamanohara, Madhu Seetharaman,Dennis Cherian, Chinmay Bapat, S. Juliane Tripathiand Monica Katiyar
24 Transport Properties and Sub-band Modulationof the SWCNT Based Nano-scale Transistors . . . . . . . . . . . . . . 155Surender Pratap and Niladri Sarkar
Part II III-Nitride: Materials and Devices
25 Modelling DC, RF and Noise Behavior of AlGaN/GaN HEMTon SiC Substrate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165Madhulika, Himanshu Pandey, Meenu Garg, Neelu Jain,Sanjeev Kumar, Amit Malik, D. S. Rawal, Meena Mishraand Arun K. Singh
26 Device Optimization of E-Mode N-Polar GaN MOS-HEMTfor Low Noise RF and Microwave Applications . . . . . . . . . . . . 171D. K. Panda and T. R. Lenka
27 60Coc Irradiation Effects on I–V Characteristics of AlGaN/GaNSchottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177Chandan Sharma, Robert Laishram, Amit, D. S. Rawal,Seema Vinayak and Rajendra Singh
Contents vii
28 Effect of AlGaN Barrier Thickness on Trapping Characteristicsin AlGaN/GaN Heterostructures . . . . . . . . . . . . . . . . . . . . . . . . 183Apurba Chakraborty, Saptarsi Ghosh, Subhashis Das, Ankush Bagand Dhrubes Biswas
29 Effect of Surface Treatments on the Evolution ofMicrostructures in GaN Thin Films and GaN/AlGaN/GaNHeterostructures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187Mansi Agrawal, B. R. Mehta and R. Muralidharan
30 Effect of Argon Plasma Treatment on Ohmic Contact Formationin AlGaN/GaN HEMTs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191Sonalee Kapoor, Robert Laishram, Hemant Saini, Somna Mahajan,Rupesh Kumar Chaubey, D. S. Rawal and Seeema Vinayak
31 Investigation on the Variation of Sheet Resistanceof RF Deposited Nichrome Thin Films with DepositionParameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 199Ajay Kumar Visvkarma, Robert Laishram, Hemant Kumar Saini,Rajeev Kumar Sawal, Sonalee Kapoor and D. S. Rawal
32 A Physics Based Analytical Model for the Threshold Voltageof a Normally-off AlGaN/GaN FinFET . . . . . . . . . . . . . . . . . . . 205Punyabrata Ghatak, Debashis Dutta and Navakanta Bhat
33 Trapping Phenomenon in AlInN/GaN HEMTs: A StudyBased on Drain Current Transient Spectroscopy . . . . . . . . . . . 219Ayush Khandelwal, Gourab Dutta, Amitava DasGuptaand Nandita DasGupta
34 Development of GaN HEMTs Based Biosensor . . . . . . . . . . . . . 225N. Chaturvedi, S. Mishra, S. Dhakad, N. Sharma, K. Singh,N. Chaturvedi, R. Taliyan, A. Chauhan, D. K Kharbandaand P. K Khanna
35 Performance of Wide Band Gap Semiconductors Impattsat THz Frequencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 231S. P. Pati
36 1.7–2.1 GHz GaN Linear Power Amplifier . . . . . . . . . . . . . . . . 235Ashish Jindal, Rajiv, Parul Gupta, Umakant Goyal, S. K. Tomer,Meena Mishra and Seema Vinayak
37 Computation of Electronic and Optical Properties of GaAsNSbwith 16 Band k dot p Model . . . . . . . . . . . . . . . . . . . . . . . . . . . 241Indranil Mal, Asish Hazra, D. P. Samajdar and T. D. Das
viii Contents
38 Growth and Characterization of Gallium Nitride Nanowireson Nickel/Sapphire Template by Chemical VapourDeposition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 249Sankaranarayanan Sanjay, Prabakaran Kandasamy, Shubra Singhand Krishnan Baskar
39 Effect of Growth Time on Thickness of InAlN/GaNHeterostructures Grown by MOCVD . . . . . . . . . . . . . . . . . . . . 255Pradeep Siddham, Surender Subburaj, Prabakaran Kandasamy,Jayasakthi Mathiyan, Shubra Singh and Baskar Krishnan
40 Direct Epitaxial Lateral Overgrowth of GaN on Sapphire . . . . 263Viswas Sadasivan and Manish Mathew
41 Thermal Control of Stress in Photoresist Film for ImprovingSelectivity in Electro-Plating Process . . . . . . . . . . . . . . . . . . . . . 269Niraj Kumar, Rajesh Kumar Jat, Prateek Kumar,Hemant Kumar Saini, Sneh Lata, Rupesh Kumar Chaubey,Robert Laishram, Vanita R. Agarwal and D. S. Rawal
42 Surface Study of AlGaN/GaN High Electron Mobility Transistorfor Fabrication Process Improvement . . . . . . . . . . . . . . . . . . . . 273Rupesh Kumar Chaubey, Anshu Goyal, Robert Laishram,Sonalee Chopra, Amit, Niraj Kumar, Prateek Kumarand Hemant Kumar Saini
43 The Dependence of off-State Breakdown of AlGaN/GaN HEMTson Buffer Traps, Gate Bias and Field Plate . . . . . . . . . . . . . . . . 279Sukalpa Mishra, Sudipto Bhattacharya, D. S. Rawaland S. Karmalkar
44 Terahertz Properties of GaN/AlGaN HeterostructureIMPATT Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 285S. K. Swain, S. R. Pattanaik, Janmejaya Pradhan and G. N. Dash
45 Enhancement-Mode High Electron Mobility Transistoron SiC Substrate with T-Gate Field Plate for High PowerApplications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 289Subhash Chander, Ajay and Mridula Gupta
46 Oxygen Ion Implantation Induced Effects in GaNEpilayer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 301Akhilesh Pandey, R. Raman, S. P. Chaudhaury, Davinder Kaurand Ashok K. Kapoor
Contents ix
Part III Photovoltaics
47 Mixed Solvent Engineering to Optimize Morphologyand Optical Properties of Perovskite Thin Filmsfor an Efficient Solar Cell . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 309Ranbir Singh, Sanjaykumar R. Suranagi, Manish Kumarand Vivek Kumar Shukla
48 A New Additive-free Industrial Chemical Texturing Processfor Diamond Wire Sawn mc-Si Wafers . . . . . . . . . . . . . . . . . . . 315K. P. Sreejith, Sandeep Kumbhar, Ashok K. Sharma,Anil Kottantharayil and Prabir K. Basu
49 Studies on Alternate Counter Electrode Materialsfor Pt—Free Dye Sensitized Solar Cells . . . . . . . . . . . . . . . . . . 323Himanshi Jauhari, Rakhi Grover, D. S. Mehta and Kanchan Saxena
50 MoO3 as Hole-Selective Contact for Diffusion-FreeSolar Cells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 329Swasti Bhatia, Irfan M. Khorakiwala, Kurias K. Markose,Pradeep R. Nair and Aldrin Antony
51 Investigation of Active Layer Thickness Variation on thePerformance of Bulk Heterojunction Organic Solar Cells . . . . . 335Sakshi Koul and Najeeb-ud-Din Hakim
52 A Comparative Study of SiO2:TiO2 Composite and SiO2 Filmby Sol-Gel Method for Solar Cell Application . . . . . . . . . . . . . . 341Kausturi Chatterjee, Soma Ray, Baishakhi Pal, Kalyan Adhikary,Utpal Gangopadhyay and Ratan Mandal
53 Structural and Optical Characterization of InGaN/GaN BasedQuantum Well Structures Grown by MOCVD . . . . . . . . . . . . . 349Kandasamy Prabakaran, Subburaj Surender, Siddham Pradeep,Sankaranarayanan Sanjay, Madhaiyan Jayasakthi, Raju Ramesh,Eric Faulques, Manavaimaran Balaji, Shubra Singhand Krishnan Baskar
54 Photoluminescence Imaging of Silicon Wafers and Solar Cellsfor Process, Device Development and Diagnostics . . . . . . . . . . . 355Ashok K. Sharma, Manoj K. Ramanathi, Binny Nair,Tarun S. Yadav, Prabir K. Basu, Anil Kottantharayil,K. L. Narasimhan and B. M. Arora
55 Application of N-doped ZnO Nanorods in Heterojunction SiSolar Cells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361Jayasree Roy Sharma, Debolina Saha, Arijit Bardhan Roy,Gourab Das, Snehanshu Patra, A. K. Baruaand Sumita Mukhopadhyay
x Contents
56 Role of Carbon Dots in Polymer Based Bulk HeterojunctionSolar Cells to Achieve High Open Circuit Voltage . . . . . . . . . . 367Rajni Sharma, Firoz Alam, Ashok K. Sharma, V. Duttaand S. K. Dhawan
57 Effect of Thermal Stress on Power Conversion Efficiencyof PCDTBT:PC71BM Organic Solar Cells . . . . . . . . . . . . . . . . . 375Shiv Kumar Dixit, Chhavi Bhatnagar, Joginder Singh,P. K. Bhatnagar and Koteswara Rao Peta
58 Evaluation of Ga:MgZnO/CIGSe Heterojunction forRealization of All Sputtered Buffer-Less Solar Cell . . . . . . . . . . 383Vivek Garg, Brajendra S. Sengar, Nisheka Anadkat,Gaurav Siddharth, Shailendra Kumar and Shaibal Mukherjee
59 Temperature Dependent Charge/Energy Transfer Studiesof PEDOT:PSS-TiO2 Composites . . . . . . . . . . . . . . . . . . . . . . . 387Jyoti Bansal, Tarnija Sarao, Reena Kumari, Ritu Srivastav,A. K. Hafiz and Shailesh Narain Sharma
60 Methylamine Vapor Exposure for Improved Morphology andStability of Cesium-Methylammonium Lead Halide PerovskiteThin-Films . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 391Akash Singh, Arun Singh Chouhan and Sushobhan Avasthi
61 Enhancement in Power Conversion Efficiencyof Multi-crystalline Silicon Solar Cell by ZnS NanoParticles with PMMA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 399Amruta Pattnaik, Monika Tomar, Som Mondal, Vinay Guptaand B. Prasad
62 Design Optimization of Bifacial Solar Cells with Bifacialityof 100% . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 407Saima Cherukat and Anil Kottantharayil
63 Tunable Plasmonic Properties from Ag–Au Alloy NanoparticleThin Films . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 415Sanjay K. Sardana, Sanjay K. Srivastava and Vamsi K. Komarala
64 Development of High-Quality Organo-metal Halide PerovskiteFilm: Optimization of Thickness, Surface Morphologyand Characterization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 419Nidhi Gupta, Amit Kumar and Kanchan Saxena
65 Studies on the PEDOT:PSS/n-Si Hybrid HeterojunctionDiode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 423Anil Kumar, Kurias K. Markose, Irfan M. Khorakiwala,Bandana Singha, Pradeep R. Nair and Aldrin Antony
Contents xi
66 Enhancing Efficiency of PEDOT:PSS Based HeterojunctionSolar Cell Through Ultra-Thin Oxide . . . . . . . . . . . . . . . . . . . . 429Prashant Singh, Sanjay K. Srivastava, Vandanaand C. M. S. Rauthan
67 Extraction of Recombination Rate Constants Using IlluminationDependent Voc of Perovskite Solar Cells . . . . . . . . . . . . . . . . . . 433Vikas Nandal and Pradeep R. Nair
68 Cell Efficiency Enhancement in Industrial MonocrystallineSilicon Solar Cells Using New Low-Cost Chemical PassivationProcess . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 437Tarun S. Yadav, K. Sandeep, Ashok K. Sharma, P. Pradeep,K. L. Narasimhan, B. M. Arora, Anil Kottantharayiland Prabir K. Basu
69 Transport Properties of La0.7Sr0.3MnO3/NSTOand La0.7Sr0.3MnO3/ZnO Perovskite Solar Cells . . . . . . . . . . . . 441Sonu Bishnoi and Saurabh Kumar Pandey
70 Optical Properties of Fe Based Perovskite and Oxygen DeficientPerovskite Structured Compounds: A Comparison . . . . . . . . . . 447Vavilapalli Durga Sankar and Shubra Singh
71 HgCdTe Epitaxial Layer Surface Treatment Using AmmoniumSulfide Before Passivation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 453Rachna Manchanda, Varun Sharma, Chanchal, V. K. Singh,Anshu Goyal, Vanya Srivastava, Ajay Kumar Saini, Nilima Singh,Raghvendra Sahai Saxena, R. Raman, Meenakshi Srivastav,Sudha Gupta, Ashok K. Kapoor and R. K. Sharma
72 Studies on n-Type a-Si:H and the Influence of ITO DepositionProcess on Silicon Heterojunction Solar Cells . . . . . . . . . . . . . . 461Irfan M. Khorakiwala, Kurias K. Markose, Anil Kumar,Nithin Chatterji, Pradeep Nair and Aldrin Antony
73 Improved Extraction of Photo-Generated Carriers in InGaNMQWSC: Effect of Staggered Quantum Wells with TripleIndium Content . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 469Basant Saini, Sugandha Sharma, Ravinder Kaur, Suchandan Paland Avinashi Kapoor
74 Alkaline Treatment of Silicon Nanostructures for EfficientPEDOT:PSS/Si Heterojunction Solar Cells . . . . . . . . . . . . . . . . 477Rumysa Manzoor, Prashant Singh, Sanjay K. Srivastava, P. Prathapand C. M. S. Rauthan
xii Contents
75 Effect of Water on Cooling Efficiency of Activated CarbonBased Thermal Cooling Layer Beneath the Solar Cell to BoostTheir Working Efficiency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 481Vivek Kumar, Amit Kumar, Hrishikesh Dhasmana,Abhishek Verma and V. K. Jain
76 Efficiency Enhancement of Polycrystalline Silicon Solar Cell Dueto Integration of Ag Nanoparticles Fabricated by RapidThermal Annealing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 489Bidyut Barman, Hrishikesh Dhasmana, Abhishek Verma,Amit Kumar, D. N. Singh and V. K. Jain
77 Effect of Microstructure on Electrical Properties of Cu2ZnSnS4Films Deposited from Inks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 497Prashant R. Ghediya and Tapas K. Chaudhuri
Part IV Crystal Growth Epitaxy and Characterization
78 Study of Thermally Annealed GaSbBi Quantum Dots Grownon GaAs by Liquid Phase Epitaxy . . . . . . . . . . . . . . . . . . . . . . 505M. K. Bhowal, S. C. Das and S. Dhar
79 Growth Mechanism and Structural Characterizationof Nano-crystalline Diamond (NCD) and Micro-crystallineDiamond (MCD) Films Deposited on Silicon Substrates . . . . . . 511Amal Das, Deleep R. Nair, Amitava Dasguptaand M. S. Ramachandra Rao
80 Structural and Electrical Characteristics of HfO2 FilmDeposited by RF Sputtering and Plasma Enhanced AtomicLayer Deposition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 517Prashant Singh, Rajesh Kumar Jha, Rajat Kumar Singhand B. R. Singh
81 Effect of Samarium Coordination on the Structural, Thermaland Optical Properties of Salicylic Acid Single Crystal . . . . . . . 525Harjinder Singh, Goldy Slathia, Bindu Raina and K. K. Bamzai
82 Crystal Growth, Structural and Optical Characterizationof Lanthanum Chloride Urea–Thiourea Semi-organicComplex . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 531Goldy Slathia, Harjinder Singh and K. K. Bamzai
83 Band Gap Tailoring and Raman Studies of Mn Doped ZnOThin Film Deposited by Ultrasonic Spray Pyrolysis . . . . . . . . . 535Monoj Kumar Singha and K. G. Deepa
Contents xiii
84 Low Cost Alloy Deposition for High Power Applications . . . . . 541Vishwas Saini, Khushbu, Deepak Bansal and Kamaljit Rangra
85 Study of Cutting-Edge AFM Modalities and SEM Techniquesin Determining Surface Parameters of Si{111} Wafer . . . . . . . . 547Bokka Satya Srinivas, Veerla Swaranalatha,Avvaru Venkata Narasimha Rao and Prem Pal
86 Growth of Optical Grade Germanium (Ge) Single Crystalsby Czochralski Technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 553Sudeep Verma, Arun Tanwar, Vinod Kumar Gandotra,Meenakshi Srivastava and R. K. Sharma
87 Microscopic Investigation by Phase Contrast Imagingand Surface Spreading Resistance Mapping . . . . . . . . . . . . . . . 561Akhilesh Pandey, Garima and Ashok K. Kapoor
Part V VLSI Technology
88 Independent Gate Operation of NAND Flash Memory Devicewith Improved Retention Characteristics . . . . . . . . . . . . . . . . . 567Pooja Bohara and S. K. Vishvakarma
89 Floating Gate Junction-Less Double Gate Radiation SensitiveField Effect Transistor (RADFET) Dosimeter: A SimulationStudy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 571Avashesh Dubey, Rakhi Narang, Manoj Saxena and Mridula Gupta
90 3D Nano Capacitors Using Electrodeposited Nickel Nanowiresin Porous Anodic Alumina Template . . . . . . . . . . . . . . . . . . . . 577Alison E. Viegas, Sudipta Dutta, S. Rekha, M. S. Bobji,Srinivasan Raghavan and Navakanta Bhat
91 Design and Optimization of Double-Gate MOSFET to Reducethe Effects of Single Event Transients . . . . . . . . . . . . . . . . . . . . 583Y. Mohammed Aneesh, K. R. Pasupathy and B. Bindu
92 Stress Induced Degradation of High-k Gate Dielectric Ta2O5
Thin Films on Silicon . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 589Upendra Kashniyal and Kamal P. Pandey
93 Poly(ethyleneimine) Doping of CNTFETs: Effect of Solventand Optimization of Doping Parameters . . . . . . . . . . . . . . . . . . 597P. R. Yasasvi Gangavarapu, M. R. Anjanashree, Suman Pahal,Manoj M. Varma and A. K. Naik
94 Electrical Discharge Characteristics of Magnetized CapacitiveCoupled Plasma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 603S. Binwal, J. K. Joshi, S. K. Karkari and L. Nair
xiv Contents
95 Part I: Optimization of the Tunnel FET Device Structurefor Achieving Circuit Performance Better Than the CurrentStandard 45 nm CMOS Technology . . . . . . . . . . . . . . . . . . . . . 611Ramakant, Sanjay Vidhyadharan, Gangishetty Akhilesh,Vaibhav Gupta, Anand Ravi and Surya Shankar Dan
96 Part II: Benchmarking the Performance of OptimizedTFET-Based Circuits with the Standard 45 nm CMOSTechnology Using Device & Circuit Co-simulationMethodology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 619Sanjay Vidhyadharan, Ramakant, Gangishetty Akhilesh,Vaibhav Gupta, Anand Ravi and Surya Shankar Dan
97 Investigation of Junctionless Transistor Based DRAM . . . . . . . 629Md. H. R. Ansari, Nupur Navlakha, Jyi-Tsong Linand Abhinav Kranti
98 Study of Extended Back Gate Double Gate JunctionLessTransistor: Theoretical and Numerical Investigation . . . . . . . . 633Vandana Kumari, Abhineet Sharan, Manoj Saxenaand Mridula Gupta
99 PrMnO3-Based Scaled (<300 nm) Nonlinear RRAM Devicefor Selector-Less Array Application . . . . . . . . . . . . . . . . . . . . . 643P. Kumbhare, S. Chouhan and Udayan Ganguly
100 Simulation Study on Stability Aspect of Dual Metal DualDielectric Based TFET Architectures Against TemperatureVariations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 649Upasana, Rakhi Narang, Manoj Saxena and M. Gupta
101 Fabrication of MEMS Capacitive Pressure Sensor (MCPS)with Segmented Bossed Diaphragm . . . . . . . . . . . . . . . . . . . . . . 657Ameen Majeed and P. Ramesh
102 A New In0.53Ga0.47As LDMOS with Tunneling Junctionfor Improved on State Performance . . . . . . . . . . . . . . . . . . . . . 665Navneet Kaur Saini and Raghvendra Sahai Saxena
103 Effect of Delta-p Doping and i-Region Length Scalingon Ion/Ioff in Si NIPIN Diode for Selector Application . . . . . . . . 671Bhaskar Das, J. Schulze and Udayan Ganguly
104 Effect of Gate Dielectric Material on the Analog Performanceof a Ge-Source Tunnel FET . . . . . . . . . . . . . . . . . . . . . . . . . . . 675Emona Datta, Avik Chattopadhyay and Abhijit Mallik
Contents xv
105 Self-heating in Inserted Oxide FINFETs . . . . . . . . . . . . . . . . . . 681Narasimha Rao Mavilla, Prashanth Paramahans Manikand Mohit Bajaj
106 CD Sensitivity to Process Parameters in Photomask FabricationUsing a LASER Pattern Generator . . . . . . . . . . . . . . . . . . . . . . 685A. B. Dhaulakhandi, Shyamali Thakur and S. K. Koul
107 Analyzing the Impact of Grain Boundary Scattering on theMetal Resistivity: First-Principles Study of Symmetric TiltGrain Boundaries in Copper . . . . . . . . . . . . . . . . . . . . . . . . . . . 691Hemant Dixit, Aniruddha Konar, Rajan Pandey, Jin Choand Francis Benistant
108 Analytical Model for Tapered Gate Electrode Double GateMOSFET Incorporating Fringing Field Effects . . . . . . . . . . . . . 697Rakhi Narang, Gokulnath Rajendran, Mridula Guptaand Manoj Saxena
Part VI Sensors
109 Dielectric Modulated AlGaAs/GaAs HEMT for Label FreeDetection of Biomolecules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 709R. K. Paswan, D. K. Panda and T. R. Lenka
110 Investigation of Sensitivity of Gate Underlap JunctionlessDG MOSFET for Biomolecules . . . . . . . . . . . . . . . . . . . . . . . . . 717Ajay, Rakhi Narang, Manoj Saxena and Mridula Gupta
111 Process Design for Fabrication of Multi-stack MEMS CapacitivePush-Pull Accelerometer Based on SOI Technology . . . . . . . . . 725Abha Panchal, Shankar Dutta, Ramjay Pal, Kapil Kumar Jainand D. K. Bhattacharya
112 Design, Modeling and Simulation of Square Diaphragm Based,Piezoelectric (AlN) MEMS Acoustic Sensor for High SPLMeasurements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 731Dhairya Singh Arya, Sushil Kumar, Mahanth Prasad,Pushpapraj Singh and Chandra C. Tripathi
113 Development of Low Leakage Charged Particle DetectorsSuitable for Alpha Spectroscopy . . . . . . . . . . . . . . . . . . . . . . . . 743Nageswara Rao Pedapati, S. Nisha, Arijit Das, Dheeraj Motagiand Ranjay Laha
114 Design and Optimization of MEMS-Based Four Beam VectorHydrophone for Direction of Arrival . . . . . . . . . . . . . . . . . . . . 753R. P. Singh, Sanjeev Kumar, Komal Gupta, Devendra Vermaand D. K. Bhattacharya
xvi Contents
115 Implantable Multisensory Microelectrode Biosensorfor Revealing Neuron and Brain Functions . . . . . . . . . . . . . . . . 763N. Manikandan, S. Muruganand, Karuppasamyand Senthil Subramanian
116 Selection of an Efficient Next Hop Metric in Wireless SensorNetworks Using Fuzzy Logic . . . . . . . . . . . . . . . . . . . . . . . . . . . 771Sukhkirandeep Kaur and Roohie Naaz Mir
117 PSPICE Circuit Simulation of Microbolometer IRFPA Unit CellUsing Sub-circuit Model of Microbolometer . . . . . . . . . . . . . . . 775Arun Panwar and Raghvendra Sahai Saxena
118 Design and Simulation of Acoustic Particle VelocitySensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 779Saha Tulana, R. P. Singh, Barman Sanjeeev, Tauheed Abdul,Gupta Komal, Verma Devendra and D. K. Bhattacharya
119 Design and Simulation of SOI-ISFET MacromodelUsing SPICE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 789Mohit Padhye, Soumendu Sinha, Rishi Sharmaand Ravindra Mukhiya
120 Feasibility Analysis of Acoustic Bragg Reflectors for UnreleasedOpto-mechanical Resonators . . . . . . . . . . . . . . . . . . . . . . . . . . . 797Ambika Shanker Shukla and Siddharth Tallur
121 Silicon Etching Characteristics in Modified TMAHSolution . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 801Veerla Swarnalatha, Avvaru Venkata Narasimha Rao and Prem Pal
122 Nanostructured SnO2 Films: Room TemperatureNH3 Sensing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 809M. Abinaya, Ramjay Pal and M. Sridharan
123 TiO2 Thin Film Optimization for Ammonia Gas Sensing . . . . . 819Neha Sakhuja and Navakanta Bhat
124 Fabrication and Characterization of Enzymatic ElectrochemicalGlucose Sensor for Closed Loop System . . . . . . . . . . . . . . . . . . 829Rekha Phadke and H. C. Nagaraj
125 Temperature Compensation of MEMS CapacitiveAccelerometer for Navigational Application . . . . . . . . . . . . . . . 839Yashoda Parmar, Shaveta, Shankar Dutta, Ramjay Paland Kapil Kumar Jain
126 Development of Barometric Pressure Sensor for MicroAir Vehicle Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 845S. Santosh Kumar, Amit Tanwar and B. D. Pant
Contents xvii
127 Room Temperature Organophosphate Detection by ThermallyOxidized Metal Oxide Thin Films . . . . . . . . . . . . . . . . . . . . . . . 849Surya Prakash Ghosh, Saswat Pattnaik, Kailash Chandra Das,Nilakantha Tripathy, Diana Pradhan, Gouranga Boseand Jyoti Prakash Kar
128 Design of Continuous Membrane Surface MicromachinedSilicon Deformable Mirror for Adaptive Optics . . . . . . . . . . . . 855Renu Sharma, Isha Yadav, Aklesh Meena, Manoj Kumar,Renuka Saxena and Kapil Kumar Jain
129 High Charge Storage Capacity Micro Electrode Arrayon a Wire for Implantable Neuromuscular Applications . . . . . . 863D. V. Santhosh Kumar Gunapu and Siva Rama Krishna Vanjari
130 Electrochemically Synthesized Polypyrrole Nanofibers TowardsGlucose Biosensing Application . . . . . . . . . . . . . . . . . . . . . . . . . 871Pramila Jakhar, Mayoorika Shukla and Vipul Singh
131 Effect of Si3N4 Passivation on the Acetone Sensing Performanceof Pd/AlGaN/GaN Heterostructure . . . . . . . . . . . . . . . . . . . . . . 875Subhashis Das, Ankush Bag, Saptarsi Ghosh, Satinder K. Sharmaand Dhrubes Biswas
132 Simulation of Adsorption of Gas Molecules on CarbonNanosensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 881Ahsana Sadaf, Himanshu Baria and Neeraj Jain
133 A Large Stroke Inverse Series Connected ElectrothermalBimorph Micromirror Platform for Optical Applications . . . . . 889Amit Kumar, Deepak Bansal, Maninder Kaur and Kamaljit Rangra
134 AlGaN/GaN HEMT Based pH Sensor . . . . . . . . . . . . . . . . . . . . 897N. Sharma, S. Dhakad, K. Singh, N. Chaturvedi, A. Chauhan,C. Periasamy and N. Chaturvedi
135 Low Cost Foam Based Vibration Sensor for ConditionBased Monitoring . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 901Reshma Ajith, Amit Tewari, Dipti Gupta and Siddharth Tallur
136 Influence of Humidity on the NO2 Sensing Propertiesof SrCo0.1Ti0.9O3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 905Neha Sarin, Sachin Kumar, Ivan P. Parkin and Vandna Luthra
137 Design and Simulation of Push–Pull Capacitive AccelerometerStructure for Navigation Applications . . . . . . . . . . . . . . . . . . . . 913Shaveta Rajial, Nidhi Gupta, Ramjay Pa and Kapil Kumar Jain
xviii Contents
138 Deposition and Optimization of Zinc Oxide Thin FilmUsing Its Nano-colloidal Solution for Various SensingApplications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 919Ashish Kumar, R. P. Yadav, Vijay Janyani and Mahanth Prasad
139 Sensing of Dibutyl Sulfide Using Carboxylic Acid FunctionalizedSingle Walled Nanotubes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 923Deepak Kumar, Pika Jha, Abhilasha Chouksey and J. S. Rawat
140 Development of Silicon Based Microchannel for GasChromatograph Column . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 927Renuka Saxena, S. S. Lamba, Vinita Gond, M. Islam,Jitendra Kumar and Kapil Kumar Jain
141 Textured Silicon Surface and Silicon Nanowires on Silicon Chipfor Ammonia Sensing Application . . . . . . . . . . . . . . . . . . . . . . . 931Amit Kumar, Daisy Verma, Hrishikesh Dhasmana, Vivek Kumar,Abhishek Verma and V. K. Jain
142 A Comparative Study of Metal Oxide Modified, SiliconWafer and Silicon Nanowires on Silicon Chip as Gas/VaporSensing Element . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 939Saravanan Yuvaraja, Hrishikesh Dhasmana, Amit Kumar,Bidyut Barman, Vivek Kumar, Abhishek Verma and V. K. Jain
143 Functionalized Graphene for NO2 Sensing: Kelvin Probe BasedContact Potential Difference (CPD) Measurements . . . . . . . . . . 947Pankaj B. Agarwal, Sami Ullha and Sumit Sharma
144 Effect of Residual Stress on Cantilever Type Push–PullCapacitive Accelerometer Structure . . . . . . . . . . . . . . . . . . . . . 951Nidhi Gupta, Shaveta, Shankar Dutta, Ramjay Paland Kapil Kumar Jain
Part VII Optoelectronics
145 Designing InP-Nanowire Based Vertical Metal-Oxide-Semiconductor Capacitors for Wavelength Selective VisibleLight Sensing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 957Subhrajit Sikdar, Basudev Nag Chowdhuryand Sanatan Chattopadhyay
146 Estimation of Scattering Loss Due to Sidewall Roughnessin High Power Laser Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . 963Deepti Jain, Somna Mahajan, Alok Jain, Manjeet Singhand Shabbir Mohammed
Contents xix
147 Substrate Dependent Growth of DH6T Small Moleculesin Vapor Deposited Thin Films . . . . . . . . . . . . . . . . . . . . . . . . . 967C. Shalu, S. Raj Mohan, Mukesh P. Joshi and Vipul Singh
148 Stable Optical Quality SiO2/TiO2 Stack Developmentfor the Facet Coating of Laser Diodes . . . . . . . . . . . . . . . . . . . . 973D. K. Mohanty, Anshu Goyal, K. Chandhok and Alok Jain
149 MgZnO Based UV Heterojunction Photodetector FabricatedUsing Dual Ion Beam Sputtering . . . . . . . . . . . . . . . . . . . . . . . 981Ritesh Bhardwaj, Pankaj Sharma, Md Arif Khan, Rohit Singhand Shaibal Mukherjee
150 Scaling of Silicon PIN Waveguide Photodetectorat 1550 nm Wavelength . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 985Sreevatsa Kurudi, Riddhi Nandi and Bijoy Krishna Das
151 Photo-Response of Carbon Nanotubes and Si Junctions . . . . . . 989Shivani Dhall and B. R. Mehta
152 Estimation of Current Conduction Mechanisms Using GatedMWIR HgCdTe Photodiode . . . . . . . . . . . . . . . . . . . . . . . . . . . 993Nilima Singh, Arun Panwar and Raghvendra Sahai Saxena
153 Synthesis of 2D MoS2 Nanosheets by Facile HydrothermalMethod for Its Functioning as Multi Wavelength OpticalSensing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1001Nahid Chaudhary, Abid, Manika Khanuja and S. S. Islam
154 InGaN/GaN Multiple Quantum Well Blue Light EmittingDiodes with Transparent Ni/ITO and Pt/ITOp-Type Contacts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1005Kuldip Singh, A. Chauhan, Manish Mathew, Rajesh Puniaand Rajender Singh Kundu
155 Investigation of Electronic and Optical Propertiesof GaSbBi/GaAs Type-II Quantum WellsUsing 14-Band k � p Hamiltonian . . . . . . . . . . . . . . . . . . . . . . . 1013Indranil Mal, Asish Hazra, D. P. Samajdar and T. D. Das
156 Chemo-mechanical Polishing of HgCdTe Epilayers GrownUsing LPE Technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1021Radheshyam Nokhwal, Akhilesh Pandey, B. L. Sharma,Rachna Manchanda, Varun Sharma, Sandeep Dalal,Raghvendra Sahai Saxena and R. K. Sharma
157 Investigations on the Effects of 150 MeV Ag Ion Irradiationson 4H–SiC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1027A. Ashraf Ali, J. Kumar, V. Ramakrishnan and K. Asokan
xx Contents
158 Effect of Carbon Ion Implantation on a Bi-Layer TransparentElectrode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1033Priyanka Garg, Vikas Sharma, Surbhi, Satyavir Singhand K. Sachdev
159 Type-II Superlattice Infrared Photodetector (T2SL IRPD)Miniband Modeling: An Atomistic NEGF Study . . . . . . . . . . . . 1039Swarnadip Mukherjee and Bhaskaran Muralidharan
160 Numerical Analysis on the Phenomenon of AbsorptiveBistability in Quantum Cascade Lasers . . . . . . . . . . . . . . . . . . . 1047P. Ashok and M. Ganesh Madhan
161 Si-Photonics Assisted Optical Single Side Band Generation,Transmission and Reception . . . . . . . . . . . . . . . . . . . . . . . . . . . 1055Awanish Pandeu and S. K. Selvaraja
162 Effect of Oxygen Pressure on Growth of Cd0.05Zn0.95O ThinFilms Using Pulsed Laser Deposition . . . . . . . . . . . . . . . . . . . . 1059Sugandha Sharma, Basant Saini, Ravinder Kaur, Vinay Gupta,Monika Tomar and Avinashi Kapoor
163 Estimation of the Occupied Density of States UsingCapacitance–Voltage Measurement in the NPB System . . . . . . 1065Sunil Kumar, Upkar K. Verma and Y. N. Mohapatra
164 Optically Controlled Silicon on Nothing MOSFET-NumericalSimulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1071Vandana Kumari, Manoj Saxena and Mridula Gupta
165 Degradation and Bias-Stress Effect in TIPS-Pentacene BasedOrganic Thin Film Transistors with Polymer Dielectric . . . . . . 1077Subhash Singh and Y. N. Mohapatra
166 InGaAs Based Short-Wave Infrared p-i-n Photodetector . . . . . 1083Anand Singh, Sumit Jain, Anil Kumar and Vanita R. Agarwal
167 Optimization of Al Composition in EBL of InGaN/GaN BasedLaser Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1089Abhishek Sharma, Kamal Lohani, Pramod Kumar and Alok Jain
168 Highly Reflective Low Resistance Pt/Ag/Ni/Au Based OhmicContacts on p-GaN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1095A. Chauhan, Kuldip Singh, Manish Mathew, Rajender Singh Kunduand Rajesh Punia
169 Three Dimensional Thermal Modeling of LaserDiode Stack . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1103Pramod Kumar, Abhishek Sharma and Alok Jain
Contents xxi
170 Studies on Iodine Based Polishing of HgCdTe Material . . . . . . 1111Radheshyam Nokhwal, Anshu Goyal, B. L. Sharma, Varun Sharma,Raghvendra Sahai Saxena and R. K. Sharma
171 Electrical Characteristics of Spray Deposited n-ZnO:Sr/p-SiHeterojunction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1117P. V. Raghavendra and J. S. Bhat
172 Optical and Structural Analysis of Surfactant AssistedHydrothermal Growth ZnO Nanostructures . . . . . . . . . . . . . . . 1123Jitesh Agrawal, Tejendra Dixit, I. A. Palani and Vipul Singh
173 Performance Optimization and Analysis of ZnO Based GreenLight Emitting Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1127Rashmi Ranjan Kumar, Deepak Punethaand Saurabh Kumar Pandey
174 Polarization Controlled High Efficiency Color FiltersUsing Si Nanoantennas . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1137Vishal Vashistha, Indu Kumari, A. E. Serebryannikovand Maciej Krwaczyk
175 Study and Preparation of High ReflectionOptical Coatings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1143Renuka Saxena, Leela Dhar, D. K. Mohanty, Renu Sharmaand Kapil Kumar Jain
Part VIII Compound Semiconductors
176 Electronic Structure Properties of ATe and A2Te(A: Cu, Ag and Cd) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1151T. Premkumar, J. Mani, G. Anbalagan and R. Vidya
177 Noise Estimation of Heterostructure GaAs/GaP OverHomostructure GaAs and GaP Based IMPATT Devicesat 94.0 GHz Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1159P. R. Tripathy, S. K. Choudhury and S. P. Pati
178 Study of Interface Trap Charges in InAs NanowireTunnel FET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1165Sankalp K. Singh, Ankur Gupta, Venkateshan Nagarajan,Deepak Anandan, Ramesh K. Kakkerla, Hung W. Yuand Edward Y. Chang
179 Origin of Room Temperature Ferromagnetismin ZnO:Ag . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1171Nasir Ali, Budhi Singh, Zaheer Ahmed Khan and Subhasis Ghosh
xxii Contents
180 Calculation of Elastic Properties of Titanium FluorideCompounds—A DFT Study . . . . . . . . . . . . . . . . . . . . . . . . . . . 1177R. Mariyal Jebasty and R. Vidya
181 Analytical Modeling and Simulation Study of Homoand Hetero III-V Semiconductor Based Tunnel FieldEffect Transistor (TFET) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1185M. Lakshmi Varshika, Rakhi Narang, Mridula Guptaand Manoj Saxena
182 Enhanced Cold Cathode Electron Emission from ZnONanostructure Attached Amorphous Carbon Nanotubes . . . . . 1195Supratim Maity and Kalyan Kumar Chattopadhyay
183 Surface Stabilised Quantum Confined ZnO Nanosystems . . . . . 1203Ashish Kumar Keshari, Manjeet Singh and Manish Sharma
184 Effect of Composite Electrode Slurry Preparation Methodon Electrochemical Characteristics of LiFePO4/C BasedLi-ion Cell . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1209A. Srinivas Kumar, T. Venugopala Rao, Prerana Priydarshini,T. V. S. L. Satyavani and Shashikant
185 Growth of Beta Phase Gallium Oxide Nanostructureson Sapphire Substrate by Chemical Vapour Deposition . . . . . . 1217Thangaraj Rajesh, Ganapathy Sasikala, Subramanian Sumathiand Subramanian Suguna
186 Light Emitting Diode and UV Photodetector Characteristicsof Solution Processed n-ZnO Nanorods/p-SiHeterostructures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1223Chandni Kumari and Ambesh Dixit
187 Band Gap Engineering of CdTe Quantum Dots by HgAlloying in Infrared Region . . . . . . . . . . . . . . . . . . . . . . . . . . . 1231Anurag Sahu, Shay Tirosh, Arie Zaban, Kirankumar Hiremathand Ambesh Dixit
188 Photoelectrochemical Study of TiO2/CdS HeterostructureThin Films Prepared via rf Sputtering . . . . . . . . . . . . . . . . . . . 1235Nisha Kodan, Aadesh P. Singh, Dipika Sharma and B. R. Mehta
189 Modeling & Simulation of Thermal Evaporated CdTeThin Film . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1241Shailendra Kumar Gaur, Ajay Kumar Saini, Vijay Singh Meenaand B. L. Sharma
Contents xxiii
190 Understanding the Optical, Electrical and PhotoelectrochemicalProperties of PbTiO3 Thin Films . . . . . . . . . . . . . . . . . . . . . . . 1249Dipika Sharma, Rishibrind Kumar Upadhyay, Nisha Kodanand B. R. Mehta
191 Modulating Structural, Optical and Electrical Properties of ZincOxide by Aluminium Doping . . . . . . . . . . . . . . . . . . . . . . . . . . 1255Anita Singh and Vandna Luthra
192 Performance of 4H-SiC and Wz-GaN Over InP IMPATTDevices at 1.0 THz Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . 1267P. R. Tripathy, M. Mukherjee and S. P. Pati
193 Enhanced Sheet Carrier Density in ZnO Based Heterostructureby Alloying Cadmium in Buffer Layer ZnO . . . . . . . . . . . . . . . 1273Md Arif Khan, Rohit Singh, Ritesh Bhardwaj, Abhinav Krantiand Shaibal Mukherjee
194 Synthesis of Ag/TiO2 Nanocomposite for Waste WaterTreatment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1277Simranjit Singh and Monika Joshi
195 Enhancement of Solar-to-Hydrogen Conversion EfficiencyAchieved for Silicon Doped ZnO Nanorods . . . . . . . . . . . . . . . . 1285Akash Sharma and R. Thangavel
196 Surface Plasmon Resonance Enhanced UV Emissionof Hydrothermally Grown ZnO Nanorods by ReducedGraphene Oxide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1293Khyati Gautam, Inderpreet Singh, Chhavi Bhatnagar,P. K. Bhatnagar and Koteswara Rao Peta
xxiv Contents
Contributors
Tauheed Abdul Solid State Physics Laboratory, Timarpur, New Delhi, India
Abid New Delhi, India
M. Abinaya Functional Nanomaterials & Devices Lab, SASTRA Deemed to beUniversity, Thanjavur, Tamil Nadu, India
Kalyan Adhikary Centre of Advanced Research in Renewable Energy and SensorTechnology, Kolkata, West Bengal, India
Pankaj B. Agarwal CSIR-Central Electronics Engineering Research Institute(CSIR-CEERI), Pilani, India
Vanita R. Agarwal Solid State Physics Laboratory, Timarpur, New Delhi, Delhi,India
Jitesh Agrawal Molecular and Nanoelectronics Research Group (MNRG),Department of Electrical Engineering, IIT Indore, Indore, Madhya Pradesh, India
Mansi Agrawal Department of Physics, Indian Institute of Technology Delhi,Hauz Khas, New Delhi, India
Mujeeb Ahmad Department of Physics, Indian Institute of Technology Delhi,New Delhi, India
Ajay Advanced Nanoelectronics Computation Laboratory, Department ofElectronic Systems Engineering, Indian Institute of Science, Bengaluru, Karnataka,India
Reshma Ajith National Institute of Technology, Tiruchirappalli, India;Department of Electrical Engineering, Indian Institute of Technology Bombay,Powai, Mumbai, India
Gangishetty Akhilesh Department of Electrical and Electronics Engineering,Birla Institute of Technology and Science Pilani, Hyderabad, Telangana, India
xxv
Firoz Alam Centre for Energy Studies, Indian Institute of Technology Delhi, NewDelhi, India
A. Ashraf Ali Crystal Growth Centre, Anna University, Chennai, India
Nasir Ali School of Physical Sciences, Jawaharlal Nehru University, Munirka,New Delhi, Delhi, India
Amit Solid State Physics Laboratory, New Delhi, Delhi, India
Nisheka Anadkat Hybrid Nanodevice Research Group (HNRG), ElectricalEngineering, Indian Institute of Technology, Indore, India
Deepak Anandan Department of Materials Science and Engineering, NCTU,Hsinchu, Taiwan
G. Anbalagan Department of Nuclear Physics, University of Madras, Chennai,Tamil Nadu, India
Anita Singh Gargi College, University of Delhi, New Delhi, India
M. R. Anjanashree Centre for Nano Science and Engineering, Indian Institute ofScience, Bengaluru, India
Md. H. R. Ansari Discipline of Electrical Engineering, Indian Institute ofTechnology Indore, Simrol, Indore, India
Aldrin Antony Energy Science and Engineering, Indian Institute of TechnologyBombay, Mumbai, India; Department of Energy Science and Engineering, IndianInstitute of Technology Bombay, Powai, Mumbai, Maharashtra, India
B. M. Arora Department of Electrical Engineering (EE), Indian Institute ofTechnology Bombay, Mumbai, India; National Centre for Photovoltaic Researchand Education (NCPRE), Indian Institute of Technology Bombay, Mumbai, India
Dhairya Singh Arya Center for Applied Research in Electronics, Indian Instituteof Technology Delhi, New Delhi, India
P. Ashok Madras Institute of Technology, Anna University, Chennai, India
K. Asokan Inter-University Accelerator Centre, New Delhi, India
Sushobhan Avasthi Centre for Nano Science and Engineering, Indian Institute ofScience, Bengaluru, India
Asha Awasthi National Centre for Flexible Electronics, Indian Institute ofTechnology, Kanpur, Uttar Pradesh, India
Ankush Bag School of Computing and Electrical Engineering, Indian Institute ofTechnology Mandi, Mandi, Himachal Pradesh, India
Mohit Bajaj Global Foundries, Bengaluru, India
xxvi Contributors
Manavaimaran Balaji Department of Energy, University of Madras, Chennai,Tamil Nadu, India
Muralidharan Balakrishnan National Centre for Flexible Electronics, IndianInstitute of Technology, Kanpur, Uttar Pradesh, India
K. K. Bamzai Crystal Growth & Materials Research Laboratory, Department ofPhysics, University of Jammu, Jammu, India
Deepak Bansal Academy of Scientific and Innovative Research, Taramani,Chennai, India; CSIR—Central Electronics Engineering Research Institute, Pilani,Rajasthan, India
Jyoti Bansal Jamia Millia Islamia, New Delhi, India; National PhysicalLaboratory, CSIR-Network of Institutes for Solar Energy, New Delhi, India
Chinmay Bapat National Centre for Flexible Electronics, Kanpur, India
Himanshu Baria Amity University, Noida, Uttar Pradesh, India
Bidyut Barman Amity Institute for Advanced Research and Studies (Materialsand Devices) & Amity Institute of Renewable and Alternative Energy, AmityUniversity, Noida, Uttar Pradesh, India
A. K. Barua Centre of Excellence for Green Energy and Sensor Systems, IndianInstitute of Engineering Science and Technology, Shibpur, Howrah, India
Krishnan Baskar Crystal Growth Centre, Anna University, Chennai, Tamil Nadu,India; Manonmaniam Sundaranar University, Tirunelveli, Tamil Nadu, India
Prabir K. Basu National Centre for Photovoltaic Research and Education(NCPRE), Indian Institute of Technology Bombay, Mumbai, India
Sriyanka Behera School of Physics, Sambalpur University, Burla, Sambalpur,Odisha, India
Kannikka Behl Amity Institute of Biotechnology, Amity University, Noida, India
Francis Benistant GLOBALFOUNDRIES, Singapore, Singapore
Ritesh Bhardwaj Hybrid Nanodevice Research Group (HNRG), ElectricalEngineering, Indian Institute of Technology Indore, Simrol, Indore, India
J. S. Bhat Department of Physics, Karnatak University, Dharwad, India
Navakanta Bhat Centre for Nano Science and Engineering, Indian Institute ofScience, Bengaluru, India
Swasti Bhatia Electrical Engineering, Indian Institute of Technology Bombay,Mumbai, India
Contributors xxvii
Chhavi Bhatnagar Department of Electronics, Maharaja Agrasen College,University of Delhi, New Delhi, India; Department of Electronic Science,University of Delhi, New Delhi, India
P. K. Bhatnagar Department of Electronic Science, University of Delhi, NewDelhi, India
D. K. Bhattacharya Solid State Physics Laboratory, Defence Research &Development Organisation, Timarpur, New Delhi, India
Sudipto Bhattacharya Research and Innovation Centre, IIT Madras ResearchPark, Chennai, India
Arkaprava Bhattacharyya Device Modeling Laboratory, School of Electrical &Electronics Engineering, SASTRA University, Thanjavur, Tamil Nadu, India
M. K. Bhowal Department of Electronic Science, University of Calcutta, Kolkata,India
B. Bindu VIT University, Chennai, India
Surya Bindu National Centre for Flexible Electronics, Indian Institute ofTechnology, Kanpur, Uttar Pradesh, India
S. Binwal Institute for Plasma Research, Bhat Village, Gujarat, India; Jamia MilliaIslamia, New Delhi, Delhi, India
Sonu Bishnoi Sensor and Optoelectronics Research Group (SORG), ElectricalEngineering Department, Indian Institute of Technology Patna, Bihar, India
Dhrubes Biswas Advanced Technology Development Centre, Indian Institute ofTechnology Kharagpur, Kharagpur, West Bengal, India; E&ECE, IIT Kharagpur,Kharagpur, West Bengal, India
M. S. Bobji Indian Institute of Science, Bengaluru, India
Pooja Bohara Nanoscale Devices, VLSI Circuit and System Design Laboratory,Electrical Engineering, Indian Institute of Technology Indore, Simrol, Indore, India
Gouranga Bose ICFAI Foundation for Higher Education University, Dontanpally,Hyderabad, Telangana, India
Apurba Chakraborty Department of ECE, NIT Agartala, Barjala, Jirania, India
Chanchal Solid State Physics Laboratory, Defence Research & DevelopmentOrganization, New Delhi, India
Subhash Chander Solid State Physics Laboratory, Timarpur, Delhi, India
K. Chandhok Solid State Physics Laboratory, Timarpur, Delhi, India
xxviii Contributors
Edward Y. Chang Department of Materials Science and Engineering, NCTU,Hsinchu, Taiwan; International College of Semiconductor Technology, NCTU,Hsinchu, Taiwan
Kausturi Chatterjee Centre of Advanced Research in Renewable Energy andSensor Technology, Kolkata, West Bengal, India
Nithin Chatterji Department of Electrical Engineering, Indian Institute ofTechnology Bombay, Powai, Mumbai, Maharashtra, India
Avik Chattopadhyay Radio Physics and Electronics Department, University ofCalcutta, Kolkata, India
Kalyan Kumar Chattopadhyay Thin Film & Nanoscience Laboratory,Department of Physics, Jadavpur University, Kolkata, India
Sanatan Chattopadhyay Department of Electronic Science, University ofCalcutta, Kolkata, West Bengal, India
N. Chaturvedi Birla Institute of Technology & Science Pilani, Pilani, Rajasthan,India; CSIR-Central Electronics Engineering Research Institute, Pilani, Rajasthan,India
Rupesh Kumar Chaubey New Delhi, India; Solid State Physics Laboratory,Timarpur, New Delhi, India
Nahid Chaudhary New Delhi, India
S. P. Chaudhaury Solid State Physics Laboratory, Timarpur, Delhi, India
Tapas K. Chaudhuri Department of Applied Physics, SVNIT, Surat, Gujarat,India
A. Chauhan CSIR-Central Electronics Engineering Research Institute, Pilani,Rajasthan, India; Optoelectronics Devices Group, CSIR-Central ElectronicsEngineering Research Institute, Pilani, India
Rajneesh Chaurasiya Department of Physics, Center of Solar Energy, IndianInstitute of Technology Jodhpur, Jodhpur, India
Dennis Cherian Laboratory of Organic Electronics, Linköping University,Norrköping, Sweden
Saima Cherukat Department of Electrical Engineering, National Centre forPhotovoltaic Research and Education (NCPRE), Indian Institute of TechnologyBombay, Mumbai, India
Jin Cho GLOBALFOUNDRIES Inc., Santa Clara, CA, USA
Sonalee Chopra New Delhi, India
S. K. Choudhury Gangadhar Meher University, Sambalpur, Odisha, India
Contributors xxix
Arun Singh Chouhan Centre for Nano Science and Engineering, Indian Instituteof Science, Bengaluru, India
S. Chouhan Department of Electrical Engineering, Indian Institute of TechnologyBombay, Mumbai, India
Abhilasha Chouksey Solid State Physics Laboratory, Timarpur, Delhi, India
Basudev Nag Chowdhury Centre for Research in Nanoscience andNanotechnology (CRNN), University of Calcutta, Salt Lake City, Kolkata, WestBengal, India
Sandeep Dalal Solid State Physics Laboratory, Timarpur, Delhi, India
Surya Shankar Dan Department of Electrical and Electronics Engineering, BirlaInstitute of Technology and Science Pilani, Hyderabad, Telangana, India
Amal Das Microelectronics and MEMS Laboratory, Department of ElectricalEngineering, IIT Madras, Chennai, India
Arijit Das Bharat Electronics Limited, Bangalore, India
Bhaskar Das Indian Institute of Technology Bombay, Powai, Mumbai,Maharashtra, India
Bijoy Krishna Das Department of Electrical Engineering, IIT Madras, Chennai,India
Gourab Das Centre of Excellence for Green Energy and Sensor Systems, IndianInstitute of Engineering Science and Technology, Shibpur, Howrah, India
Kailash Chandra Das National Institute of Technology Rourkela, Rourkela,Odisha, India
Pintu Das Department of Physics, Indian Institute of Technology Delhi, HauzKhas, India
S. C. Das Indian Institute of Science Education and Research, Mohonanpur,Nadia, Kolkata, West Bengal, India
Subhashis Das School of Computing and Electrical Engineering, Indian Instituteof Technology Mandi, Mandi, Himachal Pradesh, India
T. D. Das Department of Basic and Applied Science, National Institute ofTechnology, Yupia, Arunachal Pradesh, India
Amitava DasGupta Microelectronics and MEMS Laboratory, Department ofElectrical Engineering, Indian Institute of Technology Madras, Chennai, India
Nandita DasGupta Microelectronics and MEMS Laboratory, Department ofElectrical Engineering, Indian Institute of Technology Madras, Chennai, India
xxx Contributors
Aneesh Dash Centre for Nano Science and Engineering, Indian Institute ofScience, Bengaluru, India
G. N. Dash School of Physics, Sambalpur University, Burla, Sambalpur, Odisha,India
Emona Datta Electronic Science Department, University of Calcutta, Kolkata,India
K. G. Deepa Interdisciplinary Centre for Energy Research (ICER), Indian Instituteof Science, Bengaluru, India
Verma Devendra Solid State Physics Laboratory, Timarpur, New Delhi, India
S. Dhakad CSIR-Central Electronics Engineering Research Institute, Pilani,Rajasthan, India
S. Dhall Department of Physics, Indian Institute of Technology, Hauz Khas, NewDelhi, India
Shivani Dhall Thin Film Laboratory, Department of Physics, Indian Institute ofTechnology Delhi, Hauz Khas, India
Leela Dhar Solid State Physics Lab, Timarpur, Delhi, India
Rajdeep Dhar Department of Electrical Engineering, Indian Institute ofTechnology Madras, Chennai, India
S. Dhar Department of Electronic Science, University of Calcutta, Kolkata, India
Hrishikesh Dhasmana Amity Institute for Advanced Research and Studies(Materials and Devices) and Amity Institute of Renewable and Alternative Energy,Amity University, Noida, Uttar Pradesh, India
A. B. Dhaulakhandi Office of Director General, Microelectronic Devices andComputational Systems, New Delhi, India
S. K. Dhawan CSIR-National Physical Laboratory, New Delhi, India
Ambesh Dixit Department of Physics, Indian Institute of Technology Jodhpur,Jodhpur, India; Center for Solar Energy, Indian Institute of Technology Jodhpur,Jodhpur, Rajasthan, India
Hemant Dixit GLOBALFOUNDRIES Engineering Private Limited, Bengaluru,India
Shiv Kumar Dixit Department of Electronic Science, University of Delhi, NewDelhi, India; Manav Rachna University, Faridabad, Haryana, India
Tejendra Dixit Molecular and Nanoelectronics Research Group (MNRG),Department of Electrical Engineering, IIT Indore, Indore, Madhya Pradesh, India
Contributors xxxi
Avashesh Dubey Semiconductor Device Research Laboratory, Department ofElectronic Science, University of Delhi, New Delhi, India
Debashis Dutta Ministry of Electronics and Information Technology,Government of India, New Delhi, India
Gourab Dutta Microelectronics and MEMS Laboratory, Department of ElectricalEngineering, Indian Institute of Technology Madras, Chennai, India
Shankar Dutta Solid State Physics Laboratory (DRDO), Timarpur, New Delhi,India
Soumya Dutta Department of Electrical Engineering, Indian Institute ofTechnology Madras, Chennai, India
Sudipta Dutta Indian Institute of Science, Bengaluru, India
V. Dutta Centre for Energy Studies, Indian Institute of Technology Delhi, NewDelhi, India
Eric Faulques Institut des Matériaux Jean Rouxel, Université de Nantes, Nantes,France
Vinod Kumar Gandotra Solid State Physics Laboratory, Timarpur, Delhi, India
M. Ganesh Madhan Madras Institute of Technology, Anna University, Chennai,India
Utpal Gangopadhyay Centre of Advanced Research in Renewable Energy andSensor Technology, Kolkata, West Bengal, India
Udayan Ganguly Department of Electrical Engineering, Indian Institute ofTechnology Bombay, Mumbai, India
Gaurav Garg National Centre for Flexible Electronics, Indian Institute ofTechnology, Kanpur, Uttar Pradesh, India
Meenu Garg Department of Electronics and Communication Engineering, PunjabEngineering College (Deemed to be University), Chandigarh, India
Preeti Garg Solid State Physics Laboratory, Timarpur, Delhi, India; IndianInstitute of Technology, Hauzkhas, New Delhi, India
Priyanka Garg Malaviya National Institute of Technology, Jaipur, India
Vivek Garg Hybrid Nanodevice Research Group (HNRG), Electrical Engineering,Indian Institute of Technology, Indore, India
Garima Solid State Physics Laboratory, Timarpur, Delhi, India
Shailendra Kumar Gaur Solid State Physics Laboratory, Timarpur, Delhi, India
xxxii Contributors
Khyati Gautam Department of Electronic Science, University of Delhi, NewDelhi, India
Punyabrata Ghatak Ministry of Electronics and Information Technology,Government of India, New Delhi, India
Prashant R. Ghediya Department of Physics, Marwadi University, Rajkot,Gujarat, India
Saptarsi Ghosh Solid State Physics Laboratory, Timarpur, Delhi, India; SSPL,DRDO, New Delhi, India
Subhasis Ghosh School of Physical Sciences, Jawaharlal Nehru University,Munirka, New Delhi, Delhi, India
Surya Prakash Ghosh National Institute of Technology Rourkela, Rourkela,Odisha, India
Vinita Gond Solid State Physics Lab, Timarpur, Delhi, India
Anshu Goyal Solid State Physics Laboratory, Defence Research & DevelopmentOrganization, Timarpur, New Delhi, India
Umakant Goyal Solid State Physics Laboratory, Timarpur, Delhi, India
Rakhi Grover Amity Institute of Advanced Research and Studies (Materials andDevices), Amity Institute of Renewable and Alternative Energy, Amity University,Noida, India
D. V. Santhosh Kumar Gunapu Department of Electrical Engineering, IndianInstitute of Technology Hyderabad, Kandi, Sangareddy, Telangana, India
Ankur Gupta Centre for Applied Research in Electronics, IIT—Delhi, NewDelhi, India
Ashish Gupta National Centre for Flexible Electronics, Kanpur, India
Dipti Gupta IITB-Monash Research Academy, Indian Institute of TechnologyBombay, Powai, Mumbai, India; Department of Metallurgical Engineering andMaterials Science, Indian Institute of Technology Bombay, Powai, Mumbai, India
Komal Gupta Solid State Physics Laboratory, Defence Research & DevelopmentOrganisation, Timarpur, New Delhi, India
M. Gupta Semiconductor Device Research Laboratory, Department of ElectronicScience, University of Delhi, New Delhi, India
Mridula Gupta Department of Electronic Science, University of Delhi SouthCampus, New Delhi, India; Semiconductor Device Research Laboratory,Department of Electronic Science, University of Delhi South Campus, New Delhi,India
Contributors xxxiii
Nidhi Gupta Solid State Physics Laboratory (DRDO), Timarpur, Delhi, India;Amity Institute of Advance Research and Studies (Material & Devices) & AmityInstitute of Renewable and Alternative Energy, Amity University Uttar Pradesh,Noida, Uttar Pradesh, India
Parul Gupta Solid State Physics Laboratory, Timarpur, Delhi, India
Sudha Gupta Solid State Physics Laboratory, Defence Research & DevelopmentOrganization, New Delhi, India
Vaibhav Gupta Department of Electrical and Electronics Engineering, BirlaInstitute of Technology and Science Pilani, Hyderabad, Telangana, India
Vinay Gupta Department of Physics and Astrophysics, University of Delhi, NewDelhi, India
A. K. Hafiz Jamia Millia Islamia, New Delhi, India
Najeeb-ud-Din Hakim National Institute of Technology Srinagar, Srinagar,Jammu and Kashmir, India
Asish Hazra Department of Electronics and Communication Engineering,National Institute of Technology, Yupia, Arunachal Pradesh, India; Department ofElectronics and Communication Engineering, National Institute of Technology,Papum Pare, Arunachal Pradesh, India
Kirankumar Hiremath Department of Mathematics, Indian Institute ofTechnology Jodhpur, Jodhpur, India
Mushahid Husain Department of Physics, Jamia Millia Islamia, New Delhi, India
Samina Husain Centre for Nanoscience and Nanotechnology, Jamia MilliaIslamia, New Delhi, India
S. S. Islam New Delhi, India
M. Islam Solid State Physics Lab, Timarpur, Delhi, India
S. Sundar Kumar Iyer Department of Electrical Engineering and Samtel Centrefor Display Technologies, Indian Institute of Technology, Kanpur, India
Alok Jain Solid State Physics Laboratory, Timarpur, Delhi, India
Deepti Jain Solid State Physics Laboratory, Timarpur, Delhi, India
Kapil Kumar Jain Solid State Physics Laboratory (DRDO), Timarpur, Delhi,India
Neelu Jain Department of Electronics and Communication Engineering, PunjabEngineering College (Deemed to be University), Chandigarh, India
xxxiv Contributors
Neeraj Jain Solid State Physics Laboratory, DRDO, Timarpur, Delhi, India
Sumit Jain Solid State Physics Laboratory, Timarpur, New Delhi, Delhi, India
V. K. Jain Amity Institute for Advanced Research and Studies (Materials andDevices) and Amity Institute of Renewable and Alternative Energy, AmityUniversity, Noida, Uttar Pradesh, India
Pramila Jakhar Molecular and Nanoelectronics Research Group (MNRG),Discipline of Electrical Engineering, Indian Institute of Technology Indore, Indore,Madhya Pradesh, India
D. Jamwal Department of Electronics, University of Jammu, Jammu, Jammu andKashmir, India
Vijay Janyani Department of Electronics and Communication Engineering,Malaviya National Institute of Technology Jaipur, Jaipur, India
Rajesh Kumar Jat Solid State Physics Laboratory, Timarpur New Delhi, India
Himanshi Jauhari Amity Institute of Advanced Research and Studies (Materialsand Devices), Amity Institute of Renewable and Alternative Energy, AmityUniversity, Noida, India
Madhaiyan Jayasakthi Crystal Growth Centre, Anna University, Chennai, TamilNadu, India
Pika Jha Solid State Physics Laboratory, Timarpur, Delhi, India
Rajesh Kumar Jha Department of Electronics and Communication, IndianInstitute of Information Technology-Allahabad, Allahabad, Uttar Pradesh, India
Ashish Jindal Solid State Physics Laboratory, Timarpur, Delhi, India
Svetlana P. Jose National Centre for Flexible Electronics, Kanpur, India
J. K. Joshi Institute for Plasma Research, Bhat Village, Gujarat, India
Monika Joshi Amity Institute of Nanotechnology, Amity University, Noida, UttarPradesh, India
Mukesh P. Joshi Laser Materials & Processing Division, Raja Ramanna Centerfor Advanced Technology, Indore, MP, India
P. K Khanna CSIR-Central Electronics Engineering Research Institute, Pilani,Rajasthan, India
D. K Kharbanda CSIR-Central Electronics Engineering Research Institute,Pilani, Rajasthan, India
Ramesh K. Kakkerla Department of Materials Science and Engineering, NCTU,Hsinchu, Taiwan
Contributors xxxv
Prabakaran Kandasamy Crystal Growth Centre, Anna University, Chennai,Tamil Nadu, India
Atul Kapil Department of Physics, Career Point University, Hamirpur, HimachalPradesh, India
Ashok K. Kapoor Solid State Physics Laboratory, Defence Research &Development Organization, Timarpur, New Delhi, India
Avinashi Kapoor Department of Electronic Science, University of Delhi SouthCampus, New Delhi, India; Department of Electronic Science, University of Delhi,New Delhi, India
Sonalee Kapoor Solid State Physics Laboratory, Timarpur, Delhi, India
Jyoti Prakash Kar National Institute of Technology Rourkela, Rourkela, Odisha,India
S. K. Karkari Institute for Plasma Research, Bhat Village, Gujarat, India
S. Karmalkar Electrical Engineering Department, Indian Institute of TechnologyMadras, Chennai, India
Karuppasamy Department of Electronics and Instrumentation, BharathiarUniversity, Coimbatore, Tamil Nadu, India
Upendra Kashniyal Department of Electronics and Communication,Shambhunath Institute of Engineering and Technology, Allahabad, India
Monica Katiyar National Centre for Flexible Electronics, Indian Institute ofTechnology, Kanpur, Uttar Pradesh, India; Material Science and Engineering,Indian Institute of Technology, Kanpur, Uttar Pradesh, India
Davinder Kaur Indian Institute of Technology Roorkee, Roorkee, India
Maninder Kaur CSIR-Central Electronics Engineering Research Institute, Pilani,Rajasthan, India
Ravinder Kaur Deen Dayal Upadhyaya College, Dwarka, New Delhi, India;Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi,New Delhi, India
Sukhkirandeep Kaur Department of Computer Science & Engineering, NationalInstitute of Technology, Hazratbal, Srinagar, India
Vishakha Kaushik Department of Physics, Indian Institute of Technology Delhi,Hauz Khas, India
Ashish Kumar Keshari Department of Applied Physics, Gautam BuddhaUniversity, Greater Noida, India
Ayub Khan Department of Mathematics, Jamia Millia Islamia, New Delhi, India
xxxvi Contributors
Md Arif Khan Hybrid Nanodevice Research Group (HNRG), ElectricalEngineering, Indian Institute of Technology Indore, Simrol, Indore, India; LowPower Nanoelectronics Research Group, Electrical Engineering, Indian Institute ofTechnology Indore, Simrol, Indore, India
Zaheer Ahmed Khan Semiconductor Laboratory, Department of Space,Chandigarh, Punjab, India
Ayush Khandelwal Microelectronics and MEMS Laboratory, Department ofElectrical Engineering, Indian Institute of Technology Madras, Chennai, India
Suraj P. Khanna CSIR-National Physical Laboratory, New Delhi, India
Manika Khanuja New Delhi, India
Irfan M. Khorakiwala Department of Electrical Engineering, Indian Institute ofTechnology Bombay, Powai, Mumbai, Maharashtra, India
Khushbu CSIR—Central Electronics Engineering Research Institute, Pilani,Rajasthan, India
Nisha Kodan Thin Film Laboratory, Department of Physics, Indian Institute ofTechnology, New Delhi, India
Gupta Komal Solid State Physics Laboratory, Timarpur, New Delhi, India
Vamsi K. Komarala Indian Institute of Technology Delhi, New Delhi, India
Aniruddha Konar GLOBALFOUNDRIES Engineering Private Limited,Bengaluru, India
Anil Kottantharayil Department of Electrical Engineering, National Centre forPhotovoltaic Research and Education (NCPRE), Indian Institute of TechnologyBombay, Mumbai, India
Sakshi Koul National Institute of Technology Srinagar, Srinagar, Jammu andKashmir, India
S. K. Koul Solidstate Physics Laboratory, New Delhi, India
Abhinav Kranti Low Power Nanoelectronics Research Group, ElectricalEngineering, Indian Institute of Technology Indore, Simrol, Indore, India;Discipline of Electrical Engineering, Indian Institute of Technology Indore, Simrol,Indore, India
Krishnamanohara National Centre for Flexible Electronics, Kanpur, India
Baskar Krishnan Crystal Growth Centre, Anna University, Chennai, India;Manonmaniam Sundaranar University, Tirunelveli, India
Maciej Krwaczyk Department of Physics, Adam Mickiewicz University inPoznań, Poznań, Poland
Contributors xxxvii
Amit Kumar Academy of Scientific and Innovative Research, Taramani, Chennai,India; CSIR-Central Electronics Engineering Research Institute, Pilani, Rajasthan,India; Amity Institute for Advanced Research and Studies (Materials and Devices)and Amity Institute of Renewable and Alternative Energy, Amity University,Noida, Uttar Pradesh, India
Anil Kumar Solid State Physics Laboratory, Timarpur, New Delhi, Delhi, India;Department of Electrical Engineering, Indian Institute of Technology Bombay,Powai, Mumbai, Maharashtra, India
Ashish Kumar Department of Electronics and Communication Engineering,Malaviya National Institute of Technology Jaipur, Jaipur, India
Deepak Kumar Solid State Physics Laboratory, Timarpur, Delhi, India;Department of Physics and Astrophysics, University of Delhi, New Delhi, Delhi,India
Gaurav Kumar CSIR-National Physical Laboratory, New Delhi, India; Academyof Scientific and Innovative Research, CSIR-National Physical Laboratory(Campus), New Delhi, India
J. Kumar Crystal Growth Centre, Anna University, Chennai, India
Jitendra Kumar Solid State Physics Lab, Timarpur, Delhi, India
Manish Kumar Pohang Accelerator Laboratory, POSTECH, Pohang, SouthKorea
Manoj Kumar Solid State Physics Laboratory, Timarpur, Delhi, India
Niraj Kumar Solid State Physics Laboratory, Timarpur New Delhi, India
Piyush Kumar National Centre for Flexible Electronics, Kanpur, India
Pramod Kumar Solid State Physics Laboratory, Timarpur, Delhi, India
Prateek Kumar Solid State Physics Laboratory, Timarpur New Delhi, India
Rashmi Ranjan Kumar Sensors & Optoelectronics Research Group (SORG),Discipline of Electrical Engineering, Indian Institute of Technology Patna, Patna,Bihar, India
Sachin Kumar Department of Physics, Gargi College, New Delhi, India;Department of Physics & Astrophysics, University of Delhi, New Delhi, Delhi,India
Sanjeev Kumar Department of Applied Sciences, Punjab Engineering College(Deemed to be University), Chandigarh, India; Solid State Physics Laboratory,Defence Research & Development Organisation, Timarpur, New Delhi, India
Shailendra Kumar Raja Ramanna Center for Advanced Technology, Indore,India
xxxviii Contributors
Sunil Kumar Department of Physics, Indian Institute of Technology Kanpur,Kanpur, India; National Centre for Flexible Electronics, Indian Institute ofTechnology Kanpur, Kanpur, India
Sushil Kumar Center for Applied Research in Electronics, Indian Institute ofTechnology Delhi, New Delhi, India
Vivek Kumar Amity Institute for Advanced Research and Studies (Materials andDevices) and Amity Institute of Renewable and Alternative Energy, AmityUniversity, Noida, Uttar Pradesh, India
Chandni Kumari Department of Physics, Indian Institute of Technology Jodhpur,Jodhpur, India
Indu Kumari Indian Institute of Technology, Mandi, India
N. Kumari Department of Physics, Indian Institute of Technology, Hauz Khas,New Delhi, India
Reena Kumari National Physical Laboratory, CSIR-Network of Institutes forSolar Energy, New Delhi, India
Vandana Kumari Department of Electronics Science, University of Delhi SouthCampus, New Delhi, India; Department of Electronics, Maharaja Agrasen College,University of Delhi, New Delhi, India; Department of Electronics Science,University of Delhi, New Delhi, India
Sandeep Kumbhar National Centre for Photovoltaic Research and Education, IITBombay, Powai, India
P. Kumbhare Department of Electrical Engineering, Indian Institute ofTechnology Bombay, Mumbai, India
Rajender Singh Kundu Department of Applied Physics, Guru JambheshwarUniversity of Science and Technology, Hisar, India
Sreevatsa Kurudi Department of Electrical Engineering, IIT Madras, Chennai,India
Ranjay Laha Bharat Electronics Limited, Bangalore, India
Robert Laishram Solid State Physics Laboratory, Timarpur, New Delhi, Delhi,India
S. S. Lamba Solid State Physics Lab, Timarpur, Delhi, India
Sneh Lata Solid State Physics Laboratory, Timarpur New Delhi, India
T. R. Lenka Microelectronics and VLSI Design Group, Department of Electronicsand Communication Engineering, National Institute of Technology Silchar, Assam,India
Contributors xxxix
Jyi-Tsong Lin Department of Electrical Engineering, National Sun Yat-SenUniversity, Kaohsiung, Taiwan, Republic of China
Karunakaran Logesh Department of Electrical Engineering, Indian Institute ofTechnology Madras, Chennai, India
Kamal Lohani Solid State Physics Laboratory, Timarpur, Delhi, India
Vandna Luthra Department of Physics, Gargi College, New Delhi, India; GargiCollege, University of Delhi, New Delhi, India
Madhulika Department of Electronics and Communication Engineering, PunjabEngineering College (Deemed to be University), Chandigarh, India
Somna Mahajan Solid State Physics Laboratory, Timarpur, Delhi, India
Supratim Maity Thin Film & Nanoscience Laboratory, Department of Physics,Jadavpur University, Kolkata, India
Ameen Majeed Department of Electronics and Communication Engineering,College of Engineering Munnar, Munnar, Kerala, India
Indranil Mal Department of Electronics and Communication Engineering, PDPMIndian Institute of Information Technology, Design and Manufacturing, Jabalpur,Madhya Pradesh, India
Amit Malik Solid State Physics Laboratory, Timarpur, Delhi, India
Abhijit Mallik Electronic Science Department, University of Calcutta, Kolkata,India
Rachna Manchanda Solid State Physics Laboratory, Defence Research &Development Organization, New Delhi, India
Prashanth Kumar Manda Department of Electrical Engineering, Indian Instituteof Technology Madras, Chennai, India
Ratan Mandal School of Energy Studies, Jadavpur University, Kolkata, W.B,India
J. Mani Department of Nuclear Physics, University of Madras, Chennai, TamilNadu, India
Prashanth Paramahans Manik Global Foundries, Bengaluru, India
N. Manikandan Department of Electronics and Instrumentation, BharathiarUniversity, Coimbatore, Tamil Nadu, India
Krishna Manohara National Centre for Flexible Electronics, Indian Institute ofTechnology, Kanpur, Uttar Pradesh, India
xl Contributors
Rumysa Manzoor CSIR-National Physical Laboratory, New Delhi, India;Department of Electrical Engineering, IIT Delhi, New Delhi, India
R. Mariyal Jebasty Department of Medical Physics, Anna University, Chennai,India
Kurias K. Markose Department of Physics, Cochin University of Science andTechnology, Kochi, India; Department of Physics, Cochin University of Scienceand Technology, Kalamassery, Cochin, Kerala, India
Manish Mathew Optoelectronics Devices Group, CSIR-Central ElectronicsEngineering Research Institute, Pilani, India; Optoelectronics and MOEMS Group,CSIR-CEERI, Pilani, India
Jayasakthi Mathiyan Crystal Growth Centre, Anna University, Chennai, India
Narasimha Rao Mavilla Global Foundries, Bengaluru, India
Aklesh Meena Solid State Physics Laboratory, Timarpur, Delhi, India
Vijay Singh Meena Solid State Physics Laboratory, Timarpur, Delhi, India
Jaya Sandhya Meenakshinathan National Centre for Flexible Electronics, IndianInstitute of Technology, Kanpur, Uttar Pradesh, India
B. R. Mehta Thin Film Laboratory, Department of Physics, Indian Institute ofTechnology Delhi, Hauz Khas, New Delhi, India; Department of Physics, IndianInstitute of Technology Delhi, New Delhi, India
D. S. Mehta Department of Physics, IIT Delhi, New Delhi, India
Roohie Naaz Mir Department of Computer Science & Engineering, NationalInstitute of Technology, Hazratbal, Srinagar, India
Meena Mishra Solid State Physics Laboratory, Timarpur, Delhi, India
S. Mishra CSIR-Central Electronics Engineering Research Institute, Pilani,Rajasthan, India
Sukalpa Mishra Electrical Engineering Department, Indian Institute ofTechnology Madras, Chennai, India
Y. Mohammed Aneesh VIT University, Chennai, India
Shabbir Mohammed Solid State Physics Laboratory, Timarpur, Delhi, India
Akanksha Mohan National Centre for Flexible Electronics, Indian Institute ofTechnology, Kanpur, Uttar Pradesh, India
D. K. Mohanty Solid State Physics Laboratory, Timarpur, Delhi, India
Contributors xli
Y. N. Mohapatra Department of Physics, Indian Institute of Technology Kanpur,Kanpur, India; National Centre for Flexible Electronics, Indian Institute ofTechnology Kanpur, Kanpur, India; Materials Science Programme, Indian Instituteof Technology Kanpur, Kanpur, India
Som Mondal Department of Energy and Environment, TERI University, NewDelhi, India
Swapnil More Centre for Nano Science and Engineering (CeNSE), IndianInstitute of Science, Bengaluru, Karnataka, India
Dheeraj Motagi Bharat Electronics Limited, Bangalore, India
M. Mukherjee Adamas University, Kolkata, India
Shaibal Mukherjee Hybrid Nanodevice Research Group (HNRG), ElectricalEngineering, Indian Institute of Technology Indore, Simrol, Indore, India
Swarnadip Mukherjee Department of Electrical Engineering, Indian Institute ofTechnology Bombay, Powai, Mumbai, India
Ravindra Mukhiya CSIR-Central Electronics Engineering Research Institute(CEERI), Pilani, Rajasthan, India; Academy of Scientific and Innovative Research(AcSIR), Chennai, India
Sumita Mukhopadhyay Centre of Excellence for Green Energy and SensorSystems, Indian Institute of Engineering Science and Technology, Shibpur,Howrah, India
Bhaskaran Muralidharan Department of Electrical Engineering, Indian Instituteof Technology Bombay, Powai, Mumbai, India
R. Muralidharan Centre for Nano Science and Engineering, Indian Institute ofScience, Bangalore, India
S. Muruganand Department of Electronics and Instrumentation, BharathiarUniversity, Coimbatore, Tamil Nadu, India
H. C. Nagaraj ECE Department, Nitte Meenakshi Institute of Technology,Govindapura, Gollahalli, Yelahanka, Bangalore, India
Venkateshan Nagarajan Department of Materials Science and Engineering,NCTU, Hsinchu, Taiwan
A. K. Naik Centre for Nano Science and Engineering, Indian Institute of Science,Bengaluru, India
Akshay Naik Centre for Nano Science and Engineering (CeNSE), Indian Instituteof Science, Bengaluru, Karnataka, India
Binny Nair Department of Electrical Engineering (EE), Indian Institute ofTechnology Bombay, Mumbai, India
xlii Contributors
Deleep R. Nair Microelectronics and MEMS Laboratory, Department of ElectricalEngineering, IIT Madras, Chennai, India
L. Nair Jamia Millia Islamia, New Delhi, Delhi, India
Pradeep Nair Department of Electrical Engineering, Indian Institute ofTechnology Bombay, Powai, Mumbai, Maharashtra, India
Pradeep R. Nair Department of Electrical Engineering, Indian Institute ofTechnology Bombay, Powai, Mumbai, Maharashtra, India
Vikas Nandal Department of Electrical Engineering, Indian Institute ofTechnology Bombay, Powai, Mumbai, India
Riddhi Nandi Department of Electrical Engineering, IIT Madras, Chennai, India
Rakhi Narang Department of Electronics, Sri Venkateswara College, Universityof Delhi, New Delhi, India
K. L. Narasimhan Department of Electrical Engineering (EE), Indian Institute ofTechnology Bombay, Mumbai, India; National Centre for Photovoltaic Researchand Education (NCPRE), Indian Institute of Technology Bombay, Mumbai, India
Nupur Navlakha Discipline of Electrical Engineering, Indian Institute ofTechnology Indore, Simrol, Indore, India
Subhasha Nigam Amity Institute of Biotechnology, Amity University, Noida,India
S. Nisha Bharat Electronics Limited, Bangalore, India
Radheshyam Nokhwal Solid State Physics Laboratory, Timarpur, Delhi, India
Chinmay N. Oak Department of Electrical Engineering and Samtel Centre forDisplay Technologies, Indian Institute of Technology, Kanpur, India
Ramjay Pa Solid State Physics Laboratory (DRDO), Timarpur, Delhi, India
Mohit Padhye Birla Institute of Technology and Science (BITS), Pilani,Rajasthan, India
Suman Pahal Centre for Nano Science and Engineering, Indian Institute ofScience, Bengaluru, India
Baishakhi Pal Centre of Advanced Research in Renewable Energy and SensorTechnology, Kolkata, West Bengal, India; Department of Physics, JadavpurUniversity, Kolkata, W.B, India
Prabir Pal CSIR-National Physical Laboratory, New Delhi, India;AcSIR-Academy of Scientific & Innovative Research, New Delhi, India; Academyof Scientific and Innovative Research, CSIR-National Physical Laboratory(Campus), New Delhi, India
Contributors xliii
Prem Pal MEMS and Micro/Nano Systems Laboratory, Department of Physics,Indian Institute of Technology Hyderabad, Kandi, Sangareddy, India
Ramjay Pal Solid State Physics Laboratory (DRDO), Timarpur, Delhi, India
Suchandan Pal Optoelectronics & MOEMS Group, CSIR-CEERI, Pilani,Rajasthan, India
I. A. Palani Mechatronics and Instrumentation Lab, Department of MechanicalEngineering, IIT Indore, Indore, Madhya Pradesh, India; Centre of Material Scienceand Engineering, IIT Indore, Indore, Madhya Pradesh, India
Abha Panchal Solid State Physics Laboratory, Timarpur, New Delhi, India
D. K. Panda Microelectronics and VLSI Design Group, Department ofElectronics and Communication Engineering, National Institute of Technology,Silchar, Assam, India
Awanish Pandeu Centre for Nano Science and Engineering, Indian Institute ofScience, Bengaluru, India
Akhilesh Pandey Solid State Physics Laboratory, Timarpur, Delhi, India; IndianInstitute of Technology Roorkee, Roorkee, India
Himanshu Pandey Department of Electronics and Communication Engineering,Punjab Engineering College (Deemed to be University), Chandigarh, India
Kamal P. Pandey Department of Electronics and Communication, ShambhunathInstitute of Engineering and Technology, Allahabad, India
Rajan Pandey GLOBALFOUNDRIES Engineering Private Limited, Bengaluru,India
Saurabh Kumar Pandey Sensors & Optoelectronics Research Group (SORG),Discipline of Electrical Engineering, Indian Institute of Technology Patna, Patna,Bihar, India; Sensor and Optoelectronics Research Group (SORG), ElectricalEngineering Department, Indian Institute of Technology Patna, Bihar, India
B. D. Pant Pilani, India
Arun Panwar Solid State Physics Laboratory, Timarpur, New Delhi, India
Ivan P. Parkin Department of Chemistry, University College London, London,UK
Yashoda Parmar Solid State Physics Laboratory, Timarpur, New Delhi, India
K. R. Pasupathy VIT University, Chennai, India
R. K. Paswan Microelectronics and VLSI Design Group, Department ofElectronics and Communication Engineering, National Institute of TechnologySilchar, Assam, India
xliv Contributors
S. P. Pati National Institute of Science and Technology, Berhampur, Odisha, India
Snehanshu Patra Centre of Excellence for Green Energy and Sensor Systems,Indian Institute of Engineering Science and Technology, Shibpur, Howrah, India
S. R. Pattanaik National Institute of Science and Technology, Berhampur,Odisha, India
Amruta Pattnaik Department of Energy and Environment, TERI University, NewDelhi, India
Saswat Pattnaik National Institute of Technology Rourkela, Rourkela, Odisha,India
Nageswara Rao Pedapati Bharat Electronics Limited, Bangalore, India
C. Periasamy Malaviya National Institute of Technology Jaipur, Jaipur,Rajasthan, India
Koteswara Rao Peta Department of Electronic Science, University of Delhi, NewDelhi, India
Rekha Phadke ECE Department, Nitte Meenakshi Institute of Technology,Govindapura, Gollahalli, Yelahanka, Bangalore, India
Adhithan Pon Device Modeling Laboratory, School of Electrical & ElectronicsEngineering, SASTRA University, Thanjavur, Tamil Nadu, India
Kandasamy Prabakaran Crystal Growth Centre, Anna University, Chennai,Tamil Nadu, India
P. Pradeep National Centre for Photovoltaic Research and Education (NCPRE),Indian Institute of Technology Bombay, Mumbai, India; Department of EnergyScience and Engineering, Indian Institute of Technology Bombay, Mumbai, India
Siddham Pradeep Crystal Growth Centre, Anna University, Chennai, TamilNadu, India
Diana Pradhan National Institute of Technology Rourkela, Rourkela, Odisha,India
Janmejaya Pradhan College of Engineering Bhubaneswar, Bhubaneswas,Odisha, India
Nisha Prakash CSIR-National Physical Laboratory, New Delhi, India; Academyof Scientific and Innovative Research, CSIR-National Physical Laboratory(Campus), New Delhi, India
B. Prasad Department of Energy and Environment, TERI University, New Delhi,India
Contributors xlv
Mahanth Prasad Transducers and Actuators Group, CSIR-Central ElectronicsEngineering Research Institute (CEERI), Pilani, Rajasthan, India
Manda Prashanth Kumar Department of Electrical Engineering, Indian Instituteof Technology Madras, Chennai, India
Surender Pratap Department of Physics, Birla Institute of Technology & Science,Pilani, Pilani, Rajasthan, India
P. Prathap CSIR-National Physical Laboratory, New Delhi, India; Academy ofScientific and Innovative Research, CSIR-NPL Campus, New Delhi, India
T. Premkumar Department of Medical Physics, Anna University, Chennai, TamilNadu, India
Prerana Priydarshini N.S.T.L., Visakhapatnam, India
Deepak Punetha Sensors & Optoelectronics Research Group (SORG), Disciplineof Electrical Engineering, Indian Institute of Technology Patna, Patna, Bihar, India
Rajesh Punia Department of Applied Physics, Guru Jambheshwar University ofScience and Technology, Hisar, India
Srinivasan Raghavan Indian Institute of Science, Bengaluru, India
P. V. Raghavendra Department of Physics, Karnatak University, Dharwad, India;Department of Physics, SDM College of Engineering and Technology, Dharwad,India
Bindu Raina Crystal Growth & Materials Research Laboratory, Department ofPhysics, University of Jammu, Jammu, India
S. Raj Mohan Laser Materials & Processing Division, Raja Ramanna Center forAdvanced Technology, Indore, MP, India
Gokulnath Rajendran School of Electrical and Electronic Engineering, NanyangTechnological University, Singapore, Singapore; Technische Universität München,Munich, Germany
Thangaraj Rajesh Crystal Growth Centre, Anna University, Chennai, India
Shaveta Rajial Solid State Physics Laboratory (DRDO), Timarpur, Delhi, India
Rajiv Solid State Physics Laboratory, Timarpur, Delhi, India
M. S. Ramachandra Rao Nano Functional Materials Technology Centre,Materials Science Research Centre and Department of Physics, IIT Madras,Chennai, India
Ramakant Department of Electrical and Electronics Engineering, Birla Institute ofTechnology and Science Pilani, Hyderabad, Telangana, India
xlvi Contributors
V. Ramakrishnan Indian Institute of Science Education and Research,Thiruvanthapuram, India
R. Raman Solid State Physics Laboratory, Defence Research & DevelopmentOrganization, New Delhi, India
Manoj K. Ramanathi Department of Electrical Engineering (EE), Indian Instituteof Technology Bombay, Mumbai, India
P. Ramesh Department of Electronics and Communication Engineering, Collegeof Engineering Munnar, Munnar, Kerala, India
R. Ramesh Device Modeling Laboratory, School of Electrical & ElectronicsEngineering, SASTRA University, Thanjavur, Tamil Nadu, India
Raju Ramesh Hunan University, Changsha, China
Kamaljit Rangra Academy of Scientific and Innovative Research, Taramani,Chennai, India; CSIR—Central Electronics Engineering Research Institute, Pilani,Rajasthan, India
Avvaru Venkata Narasimha Rao MEMS and Micro/Nano Systems Laboratory,Department of Physics, Indian Institute of Technology Hyderabad, Kandi,Sangareddy, India
Shyama Rath Department of Physics and Astrophysics, University of Delhi,Delhi, India
C. M. S. Rauthan CSIR-National Physical Laboratory, New Delhi, India;Academy of Scientific and Innovative Research, New Delhi, India
Anand Ravi Department of Electrical and Electronics Engineering, Birla Instituteof Technology and Science Pilani, Hyderabad, Telangana, India
D. S. Rawal Solid State Physics Laboratory, Timarpur, Delhi, India; Solid StatePhysics Laboratory, New Delhi, Delhi, India
J. S. Rawat Solid State Physics Laboratory, Timarpur, Delhi, India
Soma Ray Centre of Advanced Research in Renewable Energy and SensorTechnology, Kolkata, West Bengal, India; Centre of Excellence for Green Energyand Sensor System, Howrah, West Bengal, India
S. Rekha National Institute of Technology Karnataka, Surathkal, India
Arijit Bardhan Roy Centre of Excellence for Green Energy and Sensor Systems,Indian Institute of Engineering Science and Technology, Shibpur, Howrah, India
K. Sachdev Malaviya National Institute of Technology, Jaipur, India
Ahsana Sadaf Jamia Millia Islamia University, New Delhi, India
Contributors xlvii
Viswas Sadasivan Department of Electronics and Communication Engineering,Amrita Vishwa Vidyapeetham, Amritapuri, India
Debolina Saha Centre of Excellence for Green Energy and Sensor Systems,Indian Institute of Engineering Science and Technology, Shibpur, Howrah, India
Praveen Sahoo Solid State Physics Laboratory, Timarpur, Delhi, India
Anurag Sahu Center for System Science, Indian Institute of Technology Jodhpur,Jodhpur, India
Ajay Kumar Saini Solid State Physics Laboratory, Defence Research &Development Organization, New Delhi, India
Basant Saini Department of Electronic Science, University of Delhi SouthCampus, New Delhi, India; Department of Electronic Science, University of Delhi,New Delhi, India
Hemant Saini New Delhi, India
Hemant Kumar Saini Solid State Physics Laboratory, Timarpur New Delhi, India
Navneet Kaur Saini Solid State Physics Laboratory, New Delhi, India
Vishwas Saini CSIR—Central Electronics Engineering Research Institute, Pilani,Rajasthan, India; CSIR—Indian Institute of Petroleum, Dehradun, Uttarakhand,India
Neha Sakhuja CeNSE, Indian Institute of Science, Bengaluru, Karnataka, India
D. P. Samajdar Department of Electronics and Communication Engineering,PDPM Indian Institute of Information Technology, Design and Manufacturing,Jabalpur, Madhya Pradesh, India
K. Sandeep National Centre for Photovoltaic Research and Education (NCPRE),Indian Institute of Technology Bombay, Mumbai, India
Sankaranarayanan Sanjay Crystal Growth Centre, Anna University, Chennai,Tamil Nadu, India
Barman Sanjeeev Solid State Physics Laboratory, Timarpur, New Delhi, India
Vavilapalli Durga Sankar Crystal Growth Centre, Anna University, Chennai,Tamil Nadu, India
Santhia Carmel Device Modeling Laboratory, School of Electrical & ElectronicsEngineering, SASTRA University, Thanjavur, Tamil Nadu, India
S. Santosh Kumar Pilani, India
Tarnija Sarao Department of Physics, Noida, Uttar Pradesh, India
xlviii Contributors
Sanjay K. Sardana CSIR-National Physical Laboratory, New Delhi, India; IndianInstitute of Technology Delhi, New Delhi, India
Neha Sarin Department of Physics, Gargi College, New Delhi, India; Departmentof Physics & Astrophysics, University of Delhi, New Delhi, Delhi, India
Niladri Sarkar Department of Physics, Birla Institute of Technology & Science,Pilani, Pilani, Rajasthan, India
Ganapathy Sasikala Crystal Growth Centre, Anna University, Chennai, India
Bokka Satya Srinivas MEMS & Micro/Nano Systems Laboratory, Department ofPhysics, Indian Institute of Technology, Hyderabad, India
T. V. S. L. Satyavani N.S.T.L., Visakhapatnam, India
Rajeev Kumar Sawal Solid State Physics Laboratory, Timarpur, Delhi, India
Kanchan Saxena Amity Institute of Advanced Research and Studies (Materialsand Devices), Amity Institute of Renewable and Alternative Energy, AmityUniversity, Noida, India
Manoj Saxena Department of Electronics, Deen Dayal Upadhyaya College,University of Delhi, New Delhi, India
Raghvendra Sahai Saxena Solid State Physics Laboratory, Timarpur, Delhi,India; Solid State Physics Laboratory, Defence Research & DevelopmentOrganization, New Delhi, India
Renuka Saxena Solid State Physics Laboratory, Timarpur, Delhi, India
J. Schulze Indian Institute of Technology Bombay, Powai, Mumbai, Maharashtra,India
Madhu Seetharaman National Centre for Flexible Electronics, Indian Institute ofTechnology, Kanpur, Uttar Pradesh, India
S. K. Selvaraja Centre for Nano Science and Engineering, Indian Institute ofScience, Bengaluru, India
Brajendra S. Sengar Hybrid Nanodevice Research Group (HNRG), ElectricalEngineering, Indian Institute of Technology, Indore, India
A. E. Serebryannikov Department of Physics, Adam Mickiewicz University inPoznań, Poznań, Poland
C. Shalu Molecular and Nanoelectronics Research Group (MNRG), Discipline ofElectrical Engineering, IIT Indore, Indore, India
Abhineet Sharan Electronics and Communication Engineering, PDPM IndianInstitute of Information Technology, Design and Manufacturing, Jabalpur, India
Abhishek Sharma Solid State Physics Laboratory, Timarpur, Delhi, India
Contributors xlix
Akash Sharma Solar Energy Research Laboratory, Department of AppliedPhysics, Indian Institute of Technology (Indian School of Mines), Dhanbad,Jharkhand, India; Centre of Excellence in Renewable Energy, Indian Institute ofTechnology (Indian School of Mines), Dhanbad, Jharkhand, India
Anup Kumar Sharma ECE Department, MNIT Jaipur, Jaipur, India
Ashok K. Sharma National Centre for Photovoltaic Research and Education, IITBombay, Powai, India; National Centre for Photovoltaic Research and Education(NCPRE), Indian Institute of Technology Bombay, Mumbai, India
B. L. Sharma Solid State Physics Laboratory, Timarpur, Delhi, India; Solid StatePhysics Laboratory, New Delhi, Delhi, India
Chandan Sharma Solid State Physics Laboratory, New Delhi, Delhi, India;Indian Institute of Technology Delhi, New Delhi, Delhi, India
Dipika Sharma Thin Film Laboratory, Department of Physics, Indian Institute ofTechnology, New Delhi, India
Jayasree Roy Sharma Centre of Excellence for Green Energy and SensorSystems, Indian Institute of Engineering Science and Technology, Shibpur,Howrah, India
Mahima Sharma Amity Institute of Nanotechnology, Amity University, Noida,India
Manish Sharma Department of Applied Phyiscs, Sharda University, GreaterNoida, India
N. Sharma CSIR-Central Electronics Engineering Research Institute, Pilani,Rajasthan, India; Malaviya National Institute of Technology Jaipur, Jaipur,Rajasthan, India
Navdeep Sharma Department of Applied Sciences, A P Goyal Shimla University,Shimla, Himachal Pradesh, India
Pankaj Sharma Hybrid Nanodevice Research Group (HNRG), ElectricalEngineering, Indian Institute of Technology Indore, Simrol, Indore, India
R. K. Sharma Solid State Physics Laboratory, Timarpur, Delhi, India; Solid StatePhysics Laboratory, New Delhi, Delhi, India; Solid State Physics Laboratory,Defence Research & Development Organization, New Delhi, India
Rajni Sharma CSIR-National Physical Laboratory, New Delhi, India
Renu Sharma Solid State Physics Laboratory, Timarpur, Delhi, India
Rishi Sharma CSIR-Central Electronics Engineering Research Institute (CEERI),Pilani, Rajasthan, India; Academy of Scientific and Innovative Research (AcSIR),Chennai, India
l Contributors
Satinder K. Sharma School of Computing and Electrical Engineering, IndianInstitute of Technology Mandi, Mandi, Himachal Pradesh, India
Shailesh Narain Sharma Department of Physics, Noida, Uttar Pradesh, India
Sugandha Sharma Department of Electronic Science, University of Delhi SouthCampus, New Delhi, India
Sumit Sharma CSIR-Central Electronics Engineering Research Institute(CSIR-CEERI), Pilani, India; Rajiv Gandhi Proudyogiki Vishwavidyalaya, Bhopal,India
Swati Sharma Department of Chemistry, University of Rajasthan, Jaipur, India
Varun Sharma Solid State Physics Laboratory, Timarpur, Delhi, India; SolidState Physics Laboratory, Defence Research & Development Organization, NewDelhi, India
Vikas Sharma Malaviya National Institute of Technology, Jaipur, India; IndianInstitute of Technology Delhi, Hauz Khas, New Delhi, India
Shashikant N.S.T.L., Visakhapatnam, India
Shaveta Solid State Physics Laboratory (DRDO), Timarpur, Delhi, India
Ambika Shanker Shukla Indian Institute of Technology Bombay, Powai, India
Garima Shukla Government Engineering College (JEC), Jabalpur, MP, India
Mayoorika Shukla Molecular and Nanoelectronics Research Group (MNRG),Discipline of Electrical Engineering, Indian Institute of Technology Indore, Indore,Madhya Pradesh, India
Vivek Kumar Shukla Gautam Buddha University, Gautam Budh Nagar, UttarPradesh, India
Pradeep Siddham Crystal Growth Centre, Anna University, Chennai, India
Gaurav Siddharth Hybrid Nanodevice Research Group (HNRG), ElectricalEngineering, Indian Institute of Technology, Indore, India
Subhrajit Sikdar Department of Electronic Science, University of Calcutta,Kolkata, West Bengal, India
Aadesh P. Singh Thin Film Laboratory, Department of Physics, Indian Institute ofTechnology, New Delhi, India
Akash Singh Centre for Nano Science and Engineering, Indian Institute ofScience, Bengaluru, India; PDPM Indian Institute of Information Technology,Design and Manufacturing, Jabalpur, India
Anand Singh Solid State Physics Laboratory, Timarpur, New Delhi, Delhi, India
Contributors li
Arun K. Singh Department of Electronics and Communication Engineering,Punjab Engineering College (Deemed to be University), Chandigarh, India
B. R. Singh Department of Electronics and Communication, Indian Institute ofInformation Technology-Allahabad, Allahabad, Uttar Pradesh, India
Budhi Singh Inter University Accelerator Centre, New Delhi, Delhi, India
D. N. Singh Indosolar Limited, Greater Noida, Uttar Pradesh, India
Harjinder Singh Crystal Growth & Materials Research Laboratory, Departmentof Physics, University of Jammu, Jammu, India
Inderpreet Singh Department of Electronics, SGTB Khalsa College, Universityof Delhi, New Delhi, India
Joginder Singh Department of Electronic Science, University of Delhi, NewDelhi, India
K. Singh CSIR-Central Electronics Engineering Research Institute, Pilani,Rajasthan, India
Kuldip Singh Optoelectronics Devices Group, CSIR-Central ElectronicsEngineering Research Institute, Pilani, India
Manjeet Singh Solid State Physics Laboratory, Timarpur, Delhi, India;Department of Applied Physics, Gautam Buddha University, Greater Noida, India
Manjri Singh CSIR-National Physical Laboratory, New Delhi, India; Academy ofScientific and Innovative Research, CSIR-National Physical Laboratory (Campus),New Delhi, India
Nilima Singh Solid State Physics Laboratory, Timarpur, Delhi, India; Solid StatePhysics Laboratory, Defence Research & Development Organization, New Delhi,India
Prashant Singh CSIR-National Physical Laboratory, New Delhi, India; Academyof Scientific and Innovative Research, CSIR-NPL Campus, New Delhi, India;Department of Electronics and Communication, Indian Institute of InformationTechnology-Allahabad, Allahabad, Uttar Pradesh, India
Pushpapraj Singh Center for Applied Research in Electronics, Indian Institute ofTechnology Delhi, New Delhi, India
R. P. Singh Solid State Physics Laboratory, Defence Research & DevelopmentOrganisation, Timarpur, New Delhi, India
Rajat Kumar Singh Department of Electronics and Communication, IndianInstitute of Information Technology-Allahabad, Allahabad, Uttar Pradesh, India
Rajendra Singh Indian Institute of Technology Delhi, New Delhi, Delhi, India
lii Contributors
Ranbir Singh Department of Chemical Engineering, POSTECH, Pohang, SouthKorea
Rohit Singh Hybrid Nanodevice Research Group (HNRG), ElectricalEngineering, Indian Institute of Technology Indore, Simrol, Indore, India; LowPower Nanoelectronics Research Group, Electrical Engineering, Indian Institute ofTechnology Indore, Simrol, Indore, India
Sankalp K. Singh Department of Materials Science and Engineering, NCTU,Hsinchu, Taiwan
Satyavir Singh Malaviya National Institute of Technology, Jaipur, India
Shubra Singh Crystal Growth Centre, Anna University, Chennai, Tamil Nadu,India
Simranjit Singh Amity Institute of Nanotechnology, Amity University, Noida,Uttar Pradesh, India
Subhash Singh Materials Science Programme, Indian Institute of TechnologyKanpur, Kanpur, India; National Centre for Flexible Electronics, Indian Institute ofTechnology Kanpur, Kanpur, India
Surinder P. Singh CSIR-National Physical Laboratory, New Delhi, India
V. K. Singh Solid State Physics Laboratory, Defence Research & DevelopmentOrganization, New Delhi, India
Vipul Singh Molecular and Nanoelectronics Research Group (MNRG), Disciplineof Electrical Engineering, Indian Institute of Technology Indore, Indore, MadhyaPradesh, India; Metallurgy Engineering and Material Science, Indian Institute ofTechnology Indore, Indore, Madhya Pradesh, India; Centre of Material Science andEngineering, IIT Indore, Indore, Madhya Pradesh, India
Bandana Singha Department of Energy Science and Engineering, Indian Instituteof Technology Bombay, Powai, Mumbai, Maharashtra, India
Monoj Kumar Singha Department of Instrumentation and Applied Physics,Indian Institute of Science, Bengaluru, India; Thermoelectric Materials and DeviceLaboratory, Department of Physics, Indian Institute of Science, Bengaluru, India
Soumendu Sinha CSIR-Central Electronics Engineering Research Institute(CEERI), Pilani, Rajasthan, India; Academy of Scientific and Innovative Research(AcSIR), Chennai, India
Goldy Slathia Crystal Growth & Materials Research Laboratory, Department ofPhysics, University of Jammu, Jammu, India
R. K. Soni Indian Institute of Technology, Hauzkhas, New Delhi, India
Contributors liii
K. P. Sreejith National Centre for Photovoltaic Research and Education, IITBombay, Powai, India; Department of Electrical Engineering, IIT Bombay, Powai,Mumbai, India
M. Sridharan Functional Nanomaterials & Devices Lab, SASTRA Deemed to beUniversity, Thanjavur, Tamil Nadu, India
A. Srinivas Kumar N.S.T.L., Visakhapatnam, India
Meenakshi Srivastav Solid State Physics Laboratory, Defence Research &Development Organization, New Delhi, India
Ritu Srivastav National Physical Laboratory, CSIR-Network of Institutes forSolar Energy, New Delhi, India
Meenakshi Srivastava Solid State Physics Laboratory, Timarpur, Delhi, India
Sanjay K. Srivastava CSIR-National Physical Laboratory, New Delhi, India;Academy of Scientific and Innovative Research, CSIR-NPL Campus, New Delhi,India
Vanya Srivastava Solid State Physics Laboratory, Defence Research &Development Organization, New Delhi, India
Surender Subburaj Crystal Growth Centre, Anna University, Chennai, India
Senthil Subramanian Hindustan College of Science and Technology, Agra, India
Subramanian Suguna Crystal Growth Centre, Anna University, Chennai, India
Subramanian Sumathi Crystal Growth Centre, Anna University, Chennai, India
Sanjaykumar R. Suranagi Department of Chemical Engineering, POSTECH,Pohang, South Korea
Surbhi Malaviya National Institute of Technology, Jaipur, India
Subburaj Surender Crystal Growth Centre, Anna University, Chennai, TamilNadu, India
S. K. Swain School of Physics, Sambalpur University, Burla, Sambalpur, Odisha,India
Veerla Swarnalatha MEMS and Micro/Nano Systems Laboratory, Department ofPhysics, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, India
R. Taliyan Birla Institute of Technology & Science, Pilani, Rajasthan, India
Siddharth Tallur Department of Electrical Engineering, Indian Institute ofTechnology Bombay, Powai, Mumbai, India
Amit Tanwar Pilani, India
Arun Tanwar Solid State Physics Laboratory, Timarpur, Delhi, India
liv Contributors
Amit Tewari IITB-Monash Research Academy, Indian Institute of TechnologyBombay, Powai, Mumbai, India
Shyamali Thakur Solidstate Physics Laboratory, New Delhi, India
R. Thangavel Solar Energy Research Laboratory, Department of Applied Physics,Indian Institute of Technology (Indian School of Mines), Dhanbad, Jharkhand,India; Centre of Excellence in Renewable Energy, Indian Institute of Technology(Indian School of Mines), Dhanbad, Jharkhand, India
Shay Tirosh Department of Chemistry, Centre for Nanotechnology & AdvancedMaterials, Bar-Ilan University, Ramat Gan, Israel
Monika Tomar Department of Physics and Astrophysics, University of Delhi,New Delhi, India; Department of Physics, Miranda House, University of Delhi,New Delhi, India
S. K. Tomer Solid State Physics Laboratory, Timarpur, Delhi, India
Chandra C. Tripathi University Institute of Engineering and Technology (UIET),Kurukshetra University, Kurukshetra, Haryana, India
Juliane Tripathi National Centre for Flexible Electronics, Kanpur, India
S. Juliane Tripathi National Centre for Flexible Electronics, Kanpur, India
Nilakantha Tripathy National Institute of Technology Rourkela, Rourkela,Odisha, India
P. R. Tripathy Gandhi Engineering College Bhubaneswar, Bhubaneswar, Odisha,India
Saha Tulana Solid State Physics Laboratory, Timarpur, New Delhi, India
Monika Tyagi Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia,New Delhi, India
Sami Ullha CSIR-Central Electronics Engineering Research Institute(CSIR-CEERI), Pilani, India; Jamia Millia Islamia, New Delhi, Delhi, India
Abhishek Upadhyay Indian Institute of Technology (IIT), Indore, MP, India
Rishibrind Kumar Upadhyay Department of Electronics, Acharya Narendra DevCollege, Delhi University, New Delhi, India
Upasana Semiconductor Device Research Laboratory, Department of ElectronicScience, University of Delhi, New Delhi, India
J. Vadivukkarasi Centre for Nano Science and Engineering, Indian Institute ofScience, Bengaluru, India
R. Vaid Department of Electronics, University of Jammu, Jammu, Jammu andKashmir, India
Contributors lv
Vandana CSIR-National Physical Laboratory, New Delhi, India; Academy ofScientific and Innovative Research, New Delhi, India
Siva Rama Krishna Vanjari Department of Electrical Engineering, IndianInstitute of Technology Hyderabad, Kandi, Sangareddy, Telangana, India
Deepak Varandani Department of Physics, Indian Institute of Technology Delhi,New Delhi, India; Department of Physics, Indian Institute of Technology Delhi,Hauz Khas, India
Manoj M. Varma Centre for Nano Science and Engineering, Indian Institute ofScience, Bengaluru, India
M. Lakshmi Varshika Department of Electrical and Electronics, Birla Institute ofTechnology and Science, Pilani, Hyderabad, India
Vishal Vashistha Department of Physics, Adam Mickiewicz University inPoznań, Poznań, Poland
T. Venugopala Rao N.S.T.L., Visakhapatnam, India
Abhishek Verma Amity Institute for Advanced Research and Studies (Materialsand Devices) and Amity Institute of Renewable and Alternative Energy, AmityUniversity, Noida, Uttar Pradesh, India
Daisy Verma Shaheed Mangal Pandey Government Girls Post Graduate College,Madhavpuram, Meerut, Uttar Pradesh, India
Devendra Verma Solid State Physics Laboratory, Defence Research &Development Organisation, Timarpur, New Delhi, India
Sudeep Verma Solid State Physics Laboratory, Timarpur, Delhi, India
Upkar K. Verma Department of Physics, Indian Institute of Technology Kanpur,Kanpur, India; National Centre for Flexible Electronics, Indian Institute ofTechnology Kanpur, Kanpur, India
Sanjay Vidhyadharan Department of Electrical and Electronics Engineering,Birla Institute of Technology and Science Pilani, Hyderabad, Telangana, India
R. Vidya Department of Medical Physics, Anna University, Chennai, Tamil Nadu,India
Alison E. Viegas Indian Institute of Science, Bengaluru, India; National Instituteof Technology Karnataka, Surathkal, India
Seeema Vinayak Solid State Physics Laboratory, New Delhi, Delhi, India; SolidState Physics Laboratory, Timarpur, Delhi, India
Vineeta Department of Physics and Astrophysics, University of Delhi, Delhi,India
lvi Contributors
S. K. Vishvakarma Nanoscale Devices, VLSI Circuit and System DesignLaboratory, Electrical Engineering, Indian Institute of Technology Indore, Simrol,Indore, India
Ajay Kumar Visvkarma Solid State Physics Laboratory, Timarpur, Delhi, India
Isha Yadav Solid State Physics Laboratory, Timarpur, Delhi, India
R. P. Yadav Department of Electronics and Communication Engineering,Malaviya National Institute of Technology Jaipur, Jaipur, India
Tarun S. Yadav Department of Electrical Engineering (EE), Indian Institute ofTechnology Bombay, Mumbai, India; National Centre for Photovoltaic Researchand Education (NCPRE), Indian Institute of Technology Bombay, Mumbai, India
P. R. Yasasvi Gangavarapu Centre for Nano Science and Engineering, IndianInstitute of Science, Bengaluru, India
Hung W. Yu Department of Materials Science and Engineering, NCTU, Hsinchu,Taiwan
Saravanan Yuvaraja Amity Institute for Advanced Research and Studies(Materials and Devices) & Amity Institute of Renewable and Alternative Energy,Amity University, Noida, Uttar Pradesh, India
Arie Zaban Department of Chemistry, Centre for Nanotechnology & AdvancedMaterials, Bar-Ilan University, Ramat Gan, Israel
Contributors lvii