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Techman Electronics (Changshu) Co., Ltd.
1 of 33 Document Number: 9SPV100-201-M01 Rev 1
SPECIFICATIONS
Solid State Drive
MODEL : PV100 Series
Release
Date: May 12, 2017
Rev : 1.01
Prepared by Reviewed by Approved by
Samuel Chen Kiwi Tsao Ilong Hsiao
Techman Electronics (Changshu) Co., Ltd.
2 of 33 Document Number: 9SPV100-201-M01 Rev 1
TECHMAN PV100 SERIES PRODUCT SPECIFICATION
Form factors
2.5” 7.0mm Z-height U.2 (SFF-8639)
M.2 2280 (Double Side) without PLP
M.2 22110 (Double Side) with PLP
Interface
2.5” U2 PCIE Gen 3x4
M.2 2280 PCIE Gen 3x4
M.2 22110 PCIE Gen 3x4
Components
Toshiba 15nm Enterprise Multi Level Cell
Toshiba 15nm Client Multi Level Cell
Support Capacity U.2 240 GB, 400GB, 480GB, 800GB, 960GB, 1600GB,
1920GB
M.2 2280 128GB, 256GB, 512GB
M.2 22110 400GB, 480GB, 800GB, 960GB, 1600GB,
1920GB
Performance
128K Sequential Read 2500 MB/s
128K Sequential Write 1150 MB/s
4K Random Read 215K /215K IOPS
4K Random Write: 120K / 34K IOPS
Power consumption
Power rail
U.2 12V and 3.3 V
M.2 3.3 V
Power consumption
Max power 9.2W
Typical Power 2.5 W
Power mode 10W/6W/3W/1W
Endurance
400GB( eMLC) 2.3DWPD / 1.679PBW
800GB( eMLC) 2.3DWPD / 3.358PBW
1600GB( eMLC) 2.3DWPD / 6.716PBW
240GB( eMLC) 0.9DWPD / 0.394PBW
480GB( eMLC) 0.9DWPD / 0.788PBW
960GB( eMLC) 0.9DWPD / 1.576PBW
19200GB( eMLC) 0.9DWPD / 3.153PBW
400GB( cMLC) 0.7DWPD / 0.511PBW
800GB( cMLC) 0.7DWPD / 1.022PBW
1600GB( cMLC) 0.7DWPD / 2.044PBW
240GB( cMLC) 0.3DWPD / 0.131PBW
480GB( cMLC) 0.3DWPD / 0.262PBW
960GB( cMLC) 0.3DWPD / 0.525PBW
1920GB( cMLC) 0.3DWPD / 1.051PBW
Features S.M.A.R.T / Health Information (LOG IDENTIFIER
02H) TRIM Wear-leveling Bad Block Management Background Garbage Collection Advanced Encryption Standard (AES) 256bit
(optional). End-to-End Data Protection Power Loss Data Protection T10-DIF Data Protection1 Variable sector size: 512b, 520b ,4096b ,4104bi Multi-namespace support
Temperature
OPERATING 0 to 55° C(Ambient)
0 to 70° C(SMART
temperature attribute)
Non-OPERATING -55 to 95° C
Airflow requirement
(35° C)
240GB 550 LFM
400GB 750 LFM
480GB 750 LFM
800GB 900 LFM
960GB 900 LFM
1600GB 900 LFM
1920GB 900 LFM
Thermal throttling
Temperature monitoring (In-band)
Temperature monitoring (Out of band : SMBus )
Shock
OPERATING 1000G/0.5ms
Non-OPERATING 1000G/0.5ms
Vibration
OPERATING 3.01 Grms (Random,
2.5~500 Hz
Non-OPERATING 4.9 Grms (Random,
5~800 Hz
Reliability
Uncorrected bit error rate ≤10−17
MTBF > 2,000,000 POH
Operating System support
Windows 10, 8.1, 7 (X86/X64)
Windows server 2016, 2012R2, 2012, 2008R2
RHEL 6.5, 6.6, 6.7, 6.8, 7.0, 7.1, 7.2
SuseLiunx 11 SP3, 11 SP4, 12, 12 SP1
CentOS 6.5, 6.6, 6.7 6.8, 7.0, 7.1, 7.2
Ubuntu Server 14.04, 15.04, 15.10 16.04
Debian 7.8, 8.1, 8.2, 8.3
Vmware 5.5, 6.0 ,6.5
Xenserver 6.5 SP1 ,7.0
Compliance
NVMe Express 1.2
PCI Express Base specification 3.1
Enterprise SSD Factor Version 1.0a
System Management Bus (SMBus) Specification,
Version 2.0
Certification
UL CE C-tick, BSMI KCC, WHQL, VCCI
i Refer to 5.1 Variable sector size for support model list
3 of 33 Document Number: 9SPV100-201-M01 Rev 1
TABLE OF CONTENTS
TECHMAN PV100 SERIES PRODUCT SPECIFICATION ................................................................................................. 2
1 INTRODUCTION ............................................................................................................................................................. 5
2 PHYSICAL SPECIFICATIONS...................................................................................................................................... 6
DIMENSION ................................................................................................................................................................. 6 WEIGHT ...................................................................................................................................................................... 6 MECHANICAL ............................................................................................................................................................. 6
2.3.1 FORM FACTOR – U.2 ................................................................................................................................................... 6 2.3.2 FORM FACTOR – M.2 2280 .......................................................................................................................................... 7 2.3.3 FORM FACTOR – M.2 22110 (LESS THAN 480GB) ...................................................................................................... 7 2.3.4 FORM FACTOR – M.2 22110 (MORE THAN 800GB)..................................................................................................... 8
3 PERFORMANCE ............................................................................................................................................................. 9
LBA SETTING ............................................................................................................................................................. 9 SEQUENTIAL READ \ WRITE PERFORMANCE ............................................................................................................... 9 RANDOM READ \ WRITE IOPS .................................................................................................................................. 10 LATENCY .................................................................................................................................................................. 12 QUALITY OF SERVICE ............................................................................................................. 錯誤! 尚未定義書籤。 READY TIME ............................................................................................................................................................. 13
4 ELECTRICAL CHARACTERISTICS ......................................................................................................................... 14
POWER SUPPLY ......................................................................................................................................................... 14 VOLTAGE (RAISE \ FALL TIME) ................................................................................................................................ 14 INRUSH CURRENT ..................................................................................................................................................... 14 CURRENT AND POWER CONSUMPTION ...................................................................................................................... 15
4.2.1 FORM FACTOR – U.2 (SFF-8639) .............................................................................................................................. 15 4.2.2 FORM FACTOR – M.2 (22110) ................................................................................................................................... 15 4.2.3 FORM FACTOR – M.2 (22110) ................................................................................................................................... 15
POWER OFF TIME....................................................................................................................................................... 15
5 FEATURES ...................................................................................................................................................................... 16
VARIABLE SECTOR SIZE SUPPORT ............................................................................................................................ 16 THERMAL THROTTLING AND PERFORMANCE ............................................................................................................ 16
6 INTERFACE ................................................................................................................................................................... 17
CONNECTOR ............................................................................................................................................................. 17 6.1.1 FORM FACTOR – U.2 (SFF-8639) .............................................................................................................................. 17
DEVICE PLUG CONNECTOR PIN DEFINITION ............................................................................................................... 18 6.2.1 FORM FACTOR – U.2 (SFF-8639) .............................................................................................................................. 18 6.2.2 FORM FACTOR –M.2 ................................................................................................................................................. 19
NVME COMMAND .................................................................................................................................................... 20 SCSI COMMAND SET ................................................................................................................................................ 20 SET FEATURE IDENTIFIERS ...................................................................................................................................... 20 LOG PAGE SUPPORT.................................................................................................................................................. 20 SMART / HEALTH INFORMATION (LOG IDENTIFIER 02H) ........................................................................................ 20 VENDOR SPECIFIC (LOG IDENTIFIER C0-FFH) ........................................................................................................... 21 PCIE ID .................................................................................................................................................................... 21 SMBUS FUNCTION.................................................................................................................................................... 22
7 NVME DRIVER SUPPORT .......................................................................................................................................... 24
NVME DRIVER SUPPORT OPERATING SYSTEM .......................................................................................................... 24
8 RELIABILITY ................................................................................................................................................................ 25
MTBF ...................................................................................................................................................................... 25 UBER ....................................................................................................................................................................... 25 DATA RETENTION ..................................................................................................................................................... 25 LIMITED WARRANTY CONDITION (PERIOD OR PBW) ............................................................................................... 25
9 ENVIRONMENTAL CONDITIONS ............................................................................................................................ 26
AMBIENT TEMPERATURE .......................................................................................................................................... 26 AIRFLOW REQUIREMENTS ........................................................................................................................................ 26
4 of 33 Document Number: 9SPV100-201-M01 Rev 1
TEMP. GRADIENT ...................................................................................................................................................... 26 HUMIDITY ................................................................................................................................................................. 26 VIBRATION ............................................................................................................................................................... 26 SHOCK ...................................................................................................................................................................... 26 DROP ........................................................................................................................................................................ 26 ESD .......................................................................................................................................................................... 26
10 RESTRICTED MATERIALS CONTENT ................................................................................................................... 27
11 LABEL ............................................................................................................................................................................. 28
DRIVE LABELS .......................................................................................................................................................... 28
12 AGENCY CERTIFICATES ........................................................................................................................................... 30
SAFETY REGULATION ............................................................................................................................................... 30 EMC ......................................................................................................................................................................... 30
13 REVISION HISTORY .................................................................................................................................................... 31
APPENDIX A MAX PERFORMANCE TEST EQUIPMENT............................................................................................. 32
BIOS CONFIGURATION ........................................................................................................................................................... 32 WINDOWS CONFIGURATION .................................................................................................................................................... 32 LINUX CONFIGURATION .......................................................................................................................................................... 32
APPENDIX B SSD PRODUCT NUMBER LIST ................................................................................................................... 33
5 of 33 Document Number: 9SPV100-201-M01 Rev 1
1 INTRODUCTION
A leader in manufacturing storage device, Techman Electronics (Changshu) Co., Ltd. (or Techman)
is positioned to provide Solid State Drive, a better solution to enterprise. Techman’s SSD mainly
consists of multicore processor and eMLC NAND flash memory which, along with our innovative
firmware architecture, deliver significant performance, high reliability, and power efficiency in a
small form factor. In addition, Techman’s SSD is compliant with Advanced Encryption Standard
(AES). Above enable Techman’s SSD to work much faster and hence to improve user experience
and satisfaction. In this manual is defined the functional, mechanical, and interface specifications of
Techman SSD PV100 series.
The general features of PV100 series are as follows:
S.M.A.R.T / Health Information (LOG IDENTIFIER 02H)
TRIM
Wear-leveling
Bad Block Management
Background Garbage Collection
Advanced Encryption Standard (AES) 256bit (optional).
End-to-End Data Protection
Power Loss Data Protection
T10-DIF Data Protection1
Variable sector size: 512b, 520b ,4096b ,4104b
Multi-namespace support
6 of 33 Document Number: 9SPV100-201-M01 Rev 1
2 PHYSICAL SPECIFICATIONS
Dimension
Form factor Length (mm) Width(mm) Height(mm)
2.5 inch 100.45 Max 69.85 +/- 0.25 7.0 +0/-0.5
M.2 2280 80.0 +\- 0.15 22.0+\- 0.15 3.58+\- 0.15
M.2 22110 110.0 +\- 0.15 22.0+\- 0.15 3.58+\- 0.15
Weight Form factor Weight (g)
2.5 inch 62 Max
M.2 2280 7.5 Max
M.2 22110 (Less than 480GB) 12 Max
M.2 22110 (more than 800GB) 14.5 Max
Mechanical
2.3.1 Form factor – U.2
7 of 33 Document Number: 9SPV100-201-M01 Rev 1
2.3.2 Form factor – M.2 2280
2.3.3 Form factor – M.2 22110 (Less than 480GB)
8 of 33 Document Number: 9SPV100-201-M01 Rev 1
2.3.4 Form factor – M.2 22110 (More than 800GB)
9 of 33 Document Number: 9SPV100-201-M01 Rev 1
3 PERFORMANCE
LBA setting
Unformatted capacity
Capacity LBA User available Bytes User available GBytes
128GB 250,069,680 128,035,676,160 119.24
256GB 468,862,128 240,057,409,536 223.57
400GB 781,422,768 400,088,457,216 372.61
480GB 937,703,088 480,103,981,056 447.13
512GB 1,000,215,216 512,110,190,592 476.94
800GB 1,562,824,368 800,166,076,416 745.21
960GB 1,875,385,008 960,197,124,096 894.25
1600GB 3,125,627,568 1,600,321,314,816 1490.42
1920GB 3,750,748,848 1,920,383,410,176 1788.50
Note: (*1) 1 GB = 1,000,000,000 bytes; 1 sector = 512 Bytes;
Sequential Read \ Write Performance
Model Capacity Sequential Read Sequential Write
PV100E55 (U.2) (Toshiba 15nm Multi Level Cell (eMLC)
PV100E55-240 240GB 2100 250
PV100E55-400 400GB 2400 550
PV100E55-480 480GB 2400 600
PV100E55-800 800GB 2500 900
PV100E55-960 960GB 2500 950
PV100E55-1600 1600GB 2500 800 PV100E55-1920 1920GB 2500 850
PV100C55 (U.2) (Toshiba 15nm Multi Level Cell (cMLC)
PV100C55-240 240GB 2100 350
PV100C55-400 400GB 2400 650
PV100C55-480 480GB 2400 700
PV100C55-800 800GB 2500 750
PV100C55-960 960GB 2500 750
PV100C55-1600 1600GB 2500 900
PV100C55-1920 1920GB 2500 950
PV100D5N (M.2 2280) (Toshiba 15nm Multi Level Cell (cMLC)
PV100D5N-128 128GB 1500 190
PV100D5N-256 256GB 2100 350
PV100D5N-512 512GB 2400 650
PV100E5B (M.2 22110) (Toshiba 15nm Multi Level Cell (eMLC)
PV100E5B-400 400GB 2400 550
PV100E5B-480 480GB 2400 600
PV100E5B-800 800GB 2500 900
PV100E5B-960 960GB 2500 950
PV100E5B-1600 1600GB 2500 800 PV100E5B-1920 1920GB 2500 850
PV100C5B (M.2 22110) (Toshiba 15nm Multi Level Cell (cMLC)
PV100C5B-400 400GB 2400 650
PV100C5B-480 480GB 2400 700
PV100C5B-800 800GB 2500 1000
PV100C5B-960 960GB 2500 1050
PV100C5B-1600 1600GB 2500 900
PV100C5B-1920 1920GB 2500 950
Note: (*1) Test OS: Centos 7.2 (CPU C-state disable)
Note: (*2) Block size =128Kib
Note: (*3) Sequential Read & write performance test by FIO (OIO= 1 job with 32 Queue Depth)
Note: (*4) Consistency up to 90%
Note: (*5) Test Rage = Full capacity
10 of 33 Document Number: 9SPV100-201-M01 Rev 1
Random Read \ Write IOPS
FOB
Model Capacity 4K Random
Read
4K Random
Write
4K Random
Read\Write
70/30
8K Random
Read
8K Random
Write
8K Random
Read\Write
70/30
PV100E55 (U.2) (Toshiba 15nm Multi Level Cell (eMLC)
PV100E55-240 240GB 150,000 65,000 75,000 75,000 32,000 40,000
PV100E55-400 400GB 205,000 115,000 80,000 115,000 75,000 40,000
PV100E55-480 480GB 205,000 115,000 80,000 115,000 75,000 40,000
PV100E55-800 800GB 215,000 120,000 85,000 120,000 85,000 45,000
PV100E55-960 960GB 215,000 120,000 90,000 120,000 85,000 45,000
PV100E55-1600 1600GB 215,000 120,000 85,000 120,000 85,000 45,000
PV100E55-1920 1920GB 215,000 120,000 90,000 120,000 85,000 45,000
PV100C55 (U.2) (Toshiba 15nm Multi Level Cell (cMLC)
PV100C55-240 240GB 150,000 65,000 75,000 75,000 32,000 40,000
PV100C55-400 400GB 200,000 115,000 80,000 105,000 75,000 40,000
PV100C55-480 480GB 200,000 115,000 80,000 105,000 75,000 40,000
PV100C55-800 800GB 215,000 115,000 85,000 120,000 75,000 45,000
PV100C55-960 960GB 215,000 115,000 90,000 120,000 75,000 45,000
PV100C55-1600 1600GB 215,000 115,000 85,000 120,000 75,000 45,000
PV100C55-1920 1920GB 215,000 115,000 90,000 120,000 75,000 45,000
PV100D5N (M.2 2280) (Toshiba 15nm Multi Level Cell (cMLC)
PV100D5N-128 128GB 110,000 47,500 --
PV100D5N-256 256GB 155,000 90,000 -- -- -- -- PV100D5N-512 512GB 195,000 115,000 -- -- -- --
PV100E5B (M.2 22110) (Toshiba 15nm Multi Level Cell (eMLC)
PV100E5B-400 400GB 205,000 115,000 80,000 115,000 75,000 40,000
PV100E5B-480 480GB 205,000 115,000 80,000 115,000 75,000 40,000
PV100E5B-800 800GB 215,000 120,000 85,000 120,000 85,000 45,000
PV100E5B-960 960GB 215,000 120,000 90,000 120,000 85,000 45,000
PV100E5B-1600 1600GB 215,000 120,000 85,000 120,000 85,000 45,000
PV100E5B-1920 1920GB 215,000 120,000 90,000 120,000 85,000 45,000
PV100C5B (M.2 22110) (Toshiba 15nm Multi Level Cell (cMLC)
PV100C5B-400 400GB 200,000 115,000 80,000 115,000 75,000 40,000
PV100C5B-480 480GB 200,000 115,000 80,000 115,000 75,000 40,000
PV100C5B-800 800GB 215,000 120,000 85,000 120,000 85,000 45,000
PV100C5B-960 960GB 215,000 120,000 90,000 120,000 85,000 45,000
PV100C5B-1600 1600GB 215,000 120,000 85,000 120,000 85,000 45,000
PV100C5B-1600 1920GB 215,000 120,000 90,000 120,000 85,000 45,000
11 of 33 Document Number: 9SPV100-201-M01 Rev 1
Steady state
Model Capacity 4K Random
Read
4K Random
Write
4K Random
Read\Write
70/30
8K Random
Read
8K Random
Write
8K Random
Read\Write
70/30
PV100E55 (U.2) (Toshiba 15nm Multi Level Cell (eMLC)
PV100E55-240 240GB 150,000 8,500 25,000 75,000 4,000 13,000
PV100E55-400 400GB 205,000 26,000 70,000 115,000 13,000 37,000
PV100E55-480 480GB 205,000 10,500 35,000 115,000 5,300 18,000
PV100E55-800 800GB 215,000 32,000 80,000 120,000 16,000 37,500
PV100E55-960 960GB 215,000 14,500 45,000 120,000 7,500 23,000
PV100E55-1600 1600GB 215,000 34,000 85,000 120,000 16,000 42,000
PV100E55-1920 1920GB 215,000 14,500 50,000 120,000 9,000 27,000
PV100C55 (U.2) (Toshiba 15nm Multi Level Cell (cMLC)
PV100C55-240 240GB 150,000 8,500 25,000 75,000 4,000 13,000
PV100C55-400 400GB 200,000 25,000 70,000 115,000 12,500 36,000
PV100C55-480 480GB 200,000 10,500 35,000 115,000 5,300 19,000
PV100C55-800 800GB 215,000 32,000 80,000 120,000 16,000 37,500
PV100C55-960 960GB 215,000 14,500 45,000 120,000 7,500 23,000
PV100C55-1600 1600GB 215,000 34,000 85,000 120,000 16,000 42,000
PV100C55-1920 1920GB 215,000 14,500 50,000 120,000 9,000 27,000
PV100D5N (M.2 2280) (Toshiba 15nm Multi Level Cell (cMLC)
PV100D5N-128 128GB -- -- -- -- -- -- PV100D5N-256 256GB 150,000 7,500 10,000 75,000 3,500 5,000
PV100D5N-512 512GB 195,000 10,500 13,000 105,000 4,200 7,100
PV100E5B (M.2 22110) (Toshiba 15nm Multi Level Cell (eMLC)
PV100E5B-400 400GB 205,000 26,000 70,000 115,000 13,000 37,000
PV100E5B-480 480GB 205,000 10,500 35,000 115,000 5,300 18,000
PV100E5B-800 800GB 215,000 32,000 80,000 120,000 16,000 37,500
PV100E5B-960 960GB 215,000 14,500 45,000 120,000 7,500 23,000
PV100E5B-1600 1600GB 215,000 34,000 85,000 120,000 16,000 42,000
PV100E5B-1920 1920GB 215,000 14,500 50,000 120,000 9,000 27,000
PV100C5B (M.2 22110) (Toshiba 15nm Multi Level Cell (cMLC)
PV100C5B-400 400GB 200,000 26,000 70,000 115,000 13,000 37,000
PV100C5B-480 480GB 200,000 10,500 35,000 115,000 5,300 18,000
PV100C5B-800 800GB 215,000 32,000 80,000 120,000 16,000 37,500
PV100C5B-960 960GB 215,000 14,500 45,000 120,000 7,500 23,000
PV100C5B-1600 1600GB 215,000 34,000 85,000 120,000 16,000 42,000
PV100C5B-1600 1920GB 215,000 14,500 50,000 120,000 9,000 27,000
Note: (*1) Test OS: Centos 7.2 (CPU C-state disable)
Note: (*2) Random read 4K IOPS & Random write 4K IOPS test by FIO (OIO=1 job with 32 Queue Depth)
Note: (*3) Consistency up to 90%
Note: (*4) Test Rage = Full capacity
12 of 33 Document Number: 9SPV100-201-M01 Rev 1
Latency
Model Capacity Sequential Read Sequential Write 4K Random Read 4K Random Write
PV100E55 (U.2) (Toshiba 15nm Multi Level Cell (eMLC)
PV100E55-240 240GB 180 us 150 us 60 us 30 us
PV100E55-400 400GB 180 us 150 us 60 us 30 us
PV100E55-480 480GB 180 us 150 us 60 us 30 us
PV100E55-800 800GB 180 us 150 us 60 us 30 us
PV100E55-960 960GB 180 us 150 us 60 us 30 us
PV100E55-1600 1600GB 180 us 150 us 60 us 30 us
PV100E55-1920 1920GB 180 us 150 us 60 us 30 us
PV100C55 (U.2) (Toshiba 15nm Multi Level Cell (cMLC)
PV100C55-240 240GB 180 us 150 us 60 us 30 us
PV100C55-400 400GB 180 us 150 us 60 us 30 us
PV100C55-480 480GB 180 us 150 us 60 us 30 us
PV100C55-800 800GB 180 us 150 us 60 us 30 us
PV100C55-960 960GB 180 us 150 us 60 us 30 us
PV100C55-1600 1600GB 180 us 150 us 60 us 30 us
PV100C55-1920 1920GB 180 us 150 us 60 us 30 us
PV100D5N (M.2 2280) (Toshiba 15nm Multi Level Cell (cMLC)
PV100D5N-128 128GB 180 us 150 us 60 us 30 us
PV100D5N-256 256GB 180 us 150 us 60 us 30 us
PV100D5N-512 512GB 180 us 150 us 60 us 30 us
PV100E5B (M.2 22110) (Toshiba 15nm Multi Level Cell (eMLC)
PV100E5B-400 400GB 180 us 150 us 60 us 30 us
PV100E5B-480 480GB 180 us 150 us 60 us 30 us
PV100E5B-800 800GB 180 us 150 us 60 us 30 us
PV100E5B-960 960GB 180 us 150 us 60 us 30 us
PV100E5B-1600 1600GB 180 us 150 us 60 us 30 us
PV100E5B-1920 1920GB 180 us 150 us 60 us 30 us
PV100C5B (M.2 22110) (Toshiba 15nm Multi Level Cell (cMLC)
PV100C5B-400 400GB 180 us 150 us 60 us 30 us
PV100C5B-480 480GB 180 us 150 us 60 us 30 us
PV100C5B-800 800GB 180 us 150 us 60 us 30 us
PV100C5B-960 960GB 180 us 150 us 60 us 30 us
PV100C5B-1600 1600GB 180 us 150 us 60 us 30 us
PV100C5B-1600 1920GB 180 us 150 us 60 us 30 us
Note: (*1) Queue Depth 1 with Max power mode
Note: (*2) Measurement by FIO
13 of 33 Document Number: 9SPV100-201-M01 Rev 1
Ready time
Model Capacity Power on to PCIe
ready
Power on to
Device ready Unsafe power on
PV100E55 (U.2) (Toshiba 15nm Multi Level Cell (eMLC)
PV100E55-240 240GB < 2sec < 12 sec 30 Sec (Max)
PV100E55-400 400GB < 2sec < 12 sec 30 Sec (Max)
PV100E55-480 480GB < 2sec < 12 sec 30 Sec (Max)
PV100E55-800 800GB < 2sec < 12 sec 40 Sec (Max)
PV100E55-960 960GB < 2sec < 12 sec 40 Sec (Max)
PV100E55-1600 1600GB < 2sec < 12 sec 50 Sec (Max)
PV100E55-1920 1920GB < 2sec < 12 sec 50 Sec (Max)
PV100C55 (U.2) (Toshiba 15nm Multi Level Cell (cMLC)
PV100C55-240 240GB < 2sec < 12 sec 30 Sec (Max)
PV100C55-400 400GB < 2sec < 12 sec 30 Sec (Max)
PV100C55-480 480GB < 2sec < 12 sec 30 Sec (Max)
PV100C55-800 800GB < 2sec < 12 sec 40 Sec (Max)
PV100C55-960 960GB < 2sec < 12 sec 40 Sec (Max)
PV100C55-1600 1600GB < 2sec < 12 sec 50 Sec (Max)
PV100C55-1920 1920GB < 2sec < 12 sec 50 Sec (Max)
PV100D5N (M.2 2280) (Toshiba 15nm Multi Level Cell (cMLC)
PV100D5N-128 128GB < 2sec < 12 sec 30 Sec (Max)
PV100D5N-256 256GB < 2sec < 12 sec 30 Sec (Max)
PV100D5N-512 512GB < 2sec < 12 sec 40 Sec (Max)
PV100E5B (M.2 22110) (Toshiba 15nm Multi Level Cell (eMLC)
PV100E5B-400 400GB < 2sec < 12 sec 30 Sec (Max)
PV100E5B-480 480GB < 2sec < 12 sec 30 Sec (Max)
PV100E5B-800 800GB < 2sec < 12 sec 40 Sec (Max)
PV100E5B-960 960GB < 2sec < 12 sec 40 Sec (Max)
PV100E5B-1600 1600GB < 2sec < 12 sec 50 Sec (Max)
PV100E5B-1920 1920GB < 2sec < 12 sec 50 Sec (Max)
PV100C5B (M.2 22110) (Toshiba 15nm Multi Level Cell (cMLC)
PV100C5B-400 400GB < 2sec < 12 sec 30 Sec (Max)
PV100C5B-480 480GB < 2sec < 12 sec 30 Sec (Max)
PV100C5B-800 800GB < 2sec < 12 sec 40 Sec (Max)
PV100C5B-960 960GB < 2sec < 12 sec 40 Sec (Max)
PV100C5B-1600 1600GB < 2sec < 12 sec 50 Sec (Max)
PV100C5B-1600 1920GB < 2sec < 12 sec 50 Sec (Max)
14 of 33 Document Number: 9SPV100-201-M01 Rev 1
4 ELECTRICAL CHARACTERISTICS
Power Supply
Capacity unit U.2 M.2
Voltage V DC 12V +10% \ -20% DC 3.3V 5%
Noise V 1000m Vp-p Max, 10 ~ 100KHz
100m Vp-p Max, 100 ~ 20KHz
120m Vp-p Max, 10 ~ 30 MHz
Voltage (Raise \ Fall Time)
Capacity unit Raise time ( Max/Min) Fall Time (Max/Min)
128GB
240GB
256GB
100 ms @ 3.3V / 1ms
200ms @ 12V / 1ms 5s / 1ms
400GB
480GB
512GB
100 ms @ 3.3V / 1ms
200ms @ 12V / 1ms 5s / 1ms
800GB
960GB
100 ms @ 3.3V / 1ms
200ms @ 12V / 1ms 5s / 1ms
1600GB
1920GB
100 ms @ 3.3V / 1ms
200ms @ 12V / 1ms 5s / 1ms
Inrush Current
Capacity unit U.2 M.2
128GB
240GB
256GB
A < 2 (12V) < 2.5 (3.3V)
400GB
480GB
512GB
A < 2 (12V) < 2.5 (3.3V)
800GB
960GB A < 2 (12V) < 2.5 (3.3V)
1600GB
1920GB A < 2 (12V) < 2.5 (3.3V)
15 of 33 Document Number: 9SPV100-201-M01 Rev 1
Current and Power Consumption
4.2.1 Form factor – U.2 (SFF-8639)
Capacity unit Idle (Avg) Read(Avg) Write(Avg)
PV100E55-240 Watt 2.4 5.5 4.2
PV100C55-400
PV100C55-480 Watt 2.4 6.5 6.2
PV100E55-400
PV100E55-480 Watt 2.4 6.5 6.2
PV100C55-800
PV100C55-960 Watt TBD TBD TBD
PV100E55-800
PV100E55-960 Watt TBD TBD TBD
PV100C55-1600
PV100E55-1600 Watt TBD TBD TBD
PV100C55-1920
PV100E55-1920 Watt TBD TBD TBD
4.2.2 Form factor – M.2 (22110) Capacity unit Idle (Avg) Read(Avg) Write(Avg)
PV100C5B-400
PV100C5B-480 Watt 2.4 6.5 6.2
PV100E5B-400
PV100E5B-480 Watt 2.4 6.5 6.2
PV100C5B-800
PV100C5B-960 Watt 2.4 7.1 8.2
PV100E5B-800
PV100E5B-960 Watt 2.5 7.1 9.2
PV100C5B-1600
PV100C5B-1920 Watt 2.5 7.6 9.1
PV100E5B-1600
PV100E5B-1920 Watt 2.5 7.6 9.1
4.2.3 Form factor – M.2 (22110) Capacity unit Idle (Avg) Read(Avg) Write(Avg)
PV100D5N-128 Watt TBD TBD TBD PV100D5N-256 Watt 2.4 5.5 4.2 PV100D5N-512 Watt 2.4 6.5 5.6
Power off time
Capacity unit SPEC
Power off time s > 5sec
16 of 33 Document Number: 9SPV100-201-M01 Rev 1
5 FEATURES
Variable Sector Size Support
Model Capacity 512B 512B+8B 4096B 4096B+8
Max power mode PV100D5N-128
PV100D5N-256
PV100D5N-512
128GB
256GB
512GB
Support No Support Support No Support
PV100C55-240
PV100E55-240 240GB Support No Support Support Support
PV100C55-400
PV100E55-400
PV100C5B-400
PV100E5B-400
400GB Support No Support Support Support
PV100C55-480
PV100E55-480
PV100C5B-480
PV100E5B-480
480GB Support No Support Support Support
PV100C55-800
PV100C5B-800 800GB Support No Support Support Support
PV100E55-800
PV100E5B-800 800GB Support Support Support Support
PV100C55-960
PV100C5B-960 960GB Support No Support Support Support
PV100E55-960
PV100E5B-960 960GB Support Support Support Support
PV100C55-1600
PV100C5B-1600
PV100E55-1600
PV100E5B-1600
1600GB Support Support Support Support
PV100C55-1920
PV100C5B-1920
PV100E55-1920
PV100E5B-1920
1920GB Support Support Support Support
Thermal Throttling and Performance
Capacity Temperature
S.M.A.R.T Write performance Read Performance
Normal 100% 100%
Power State 1 Up to 70C Down to 50% Down to 50%
Power State 2 Up to 76C Down to 20% Down to 20%
Power State 3 Up to 80C Freeze Freeze
17 of 33 Document Number: 9SPV100-201-M01 Rev 1
6 INTERFACE
Connector
6.1.1 Form factor – U.2 (SFF-8639)
18 of 33 Document Number: 9SPV100-201-M01 Rev 1
Device plug connector pin definition
6.2.1 Form factor – U.2 (SFF-8639) Pin Name Description Pin Name Description
S1 GND Ground E7 REFCLK1+ Reference clock port 0
S2
Not used (SATA/SAS) E8 REFCLK1 - Reference clock port 0
S3
Not used (SATA/SAS) E9 GND Ground
S4 GND Ground E10 PETp0 Transmitter differential pair, Lane 0
S5
Not used (SATA/SAS) E11 PETn0 Transmitter differential pair, Lane 0
S6
Not used (SATA/SAS) E12 GND Ground
S7 GND Ground E13 PERn0 Receiver differential pair, Lane 0
E1 REFCLK1+ Reference clock port 1(not used) E14 PERp0 Receiver differential pair, Lane 0
E2 REFCLK1 - Reference clock port 1(not used) E15 GND Ground
E3 3.3Vaux 3.3V auxiliary power E16 RSVD Reserved
E4 PERST1# Reference clock port 1(not used) S8 GND Ground
E5 PERST0# Fundamental reset port 0 S9
Not used (SATA/SAS)
E6 RSVD Reserved S10
Not used (SATA/SAS)
P1
Not used (SATA/SAS) S11 GND Ground
P2
Not used (SATA/SAS) S12
Not used (SATA/SAS)
P3
Not used (SATA/SAS) S13
Not used (SATA/SAS)
P4 IfDet_N Interface detect (drive type) S14 GND Ground
P5 GND Ground S15 RSVD Reserved
P6 GND Ground S16 GND Ground
P7
Not used (SATA/SAS) S17 PETp1 Transmitter differential pair, Lane 1
P8
Not used (SATA/SAS) S18 PETn1 Transmitter differential pair, Lane 1
P9
Not used (SATA/SAS) S19 GND Ground
P10 PRSNT_N Presence detect
(also used for drive type)
S20 PERn1 Receiver differential pair, Lane 1
P11 Activity Activity signal from the drive S21 PERp1 Receiver differential pair, Lane 1
P12 Hot-Plug Ground S22 GND Ground
P13 +12V_pre 12V power S23 PETp2 Transmitter differential pair, Lane 2
P14 +12V 12V power S24 PETn2 Transmitter differential pair, Lane 2
P15 +12V 12V power S25 GND Ground
S26 PERn2 Receiver differential pair, Lane 2
S27 PERp2 Receiver differential pair, Lane 2
S28 GND Ground
E17 PETp3 Transmitter differential pair, Lane 3
E18 PETn3 Transmitter differential pair, Lane 3
E19 GND Ground
E20 PERn3 Receiver differential pair, Lane 3
E21 PERp3 Receiver differential pair, Lane 3
E22 GND Ground
E23 SMCLK SMBus clock
E24 SMDAT SMBus data
E25 DualPortEn_N Dual port enable
19 of 33 Document Number: 9SPV100-201-M01 Rev 1
6.2.2 Form factor –M.2
20 of 33 Document Number: 9SPV100-201-M01 Rev 1
NVMe Command
ID (Hex) ATTRIBUTES ID (Hex) ATTRIBUTES
NVMe Admin Command
00h Delete I/O Submission Queue 0Ah GET Features
01h Delete I/O Completion Queue 0Ch Asynchronous Event Notification
02h Get Log Page 0Dh Namespace Management
04h Create I/O Submission Queue 10h Firmware Activate
05h Create I/O Completion Queue 11h Firmware Image Download
06h Identify 15h Namespace Attachment
08h Abort 80h Format NVM
NVMe I/O Command
00h Flush 02h Read
01h Write 09h Dataset Management (De-allocate only)
SCSI command Set
ID (Hex) Command ID (Hex) Command
08h Read 6 A0h Report LUNs
28h Read 10 03h Request Sense
A8h Read 12 1Bh Start Stop Unit
88h Read 16 35h Synchronize Cache 10
12h Inquiry 91h Synchronize Cache 16
1Ah Mode Sense 6 00h Test Unit Ready
5Ah Mode Select 10 3Bh Write Buffer
15h Mode Select 6 0Ah Write 6
55h Mode Select 10 2Ah Write 10
4Dh Log Sense AAh Write 12
25H Read Capacity 10 8Ah Write 16
9Eh/10 Read Capacity 16 42h Unmap
SET Feature Identifiers
Feature
Identifier (Hex) ATTRIBUTES
Feature
Identifier
(Hex)
ATTRIBUTES
01h Arbitration 08h Interrupt Coalescing
02h Power Management 09h Interrupt Vector Configuration
03h LBA Range Type 0bh Asynchronous Event Configuration
04h Temperature Threshold 80h Software Progress Marker
07h Number of Queues
Log Page Support
ID (Hex) ATTRIBUTES
01h Error Information 03h Firmware Slot Information
02h SMART/ Health Information 05h Command Effects Log
SMART / Health Information (Log Identifier 02h)
Byte Description
0
Critical Warning: This field indicates critical warnings for the state of the controller. Each bit corresponds to a critical
warning type; multiple bits may be set. If a bit is cleared to ‘0’, then that critical warning does not apply. Critical warnings
may result in an asynchronous event notification to the host. Bits in this field represent the current associated state and
are not persistent.
2:1
Composite Temperature: Contains a value corresponding to a temperature in degrees Kelvin that represents the
current composite temperature of the controller and namespace(s) associated with that controller. The manner in which
this value is computed is implementation specific and may not represent the actual temperature of any physical point in
the NVM subsystem. The value of this field may be used to trigger an asynchronous event (refer to section 5.14.1.4).
Warning and critical overheating composite temperature threshold values are reported by the WCTEMP and CCTEMP
fields in the Identify Controller data structure in Figure 90.
3 Available Spare: Contains a normalized percentage (0 to 100%) of the remaining spare capacity available.
4 Available Spare Threshold: When the Available Spare falls below the threshold indicated in this field, an
asynchronous event completion may occur. The value is indicated as a normalized percentage (0 to 100%).
5
Percentage Used: Contains a vendor specific estimate of the percentage of NVM subsystem life used based on the
actual usage and the manufacturer’s prediction of NVM life. A value of 100 indicates that the estimated endurance of
the NVM in the NVM subsystem has been consumed, but may not indicate an NVM subsystem failure. The value is
allowed to exceed 100. Percentages greater than 254 shall be represented as 255. This value shall be updated once per
power-on hour (when the controller is not in a sleep state).
21 of 33 Document Number: 9SPV100-201-M01 Rev 1
Refer to the JEDEC JESD218A standard for SSD device life and endurance measurement techniques.
31:6 Reserved
47:32
Data Units Read: Contains the number of 512 byte data units the host has read from the controller; this value does not
include metadata. This value is reported in thousands (i.e., a value of 1 corresponds to 1000 units of 512 bytes read)
and is rounded up. When the LBA size is a value other than 512 bytes, the controller shall convert the amount of data
read to 512 byte units.
For the NVM command set, logical blocks read as part of Compare and Read operations shall be included in this value.
63:48
Data Units Written: Contains the number of 512 byte data units the host has written to the controller; this value does
not include metadata. This value is reported in thousands (i.e., a value of 1 corresponds to 1000 units of 512 bytes
written) and is rounded up. When the LBA size is a value other than 512 bytes, the controller shall convert the amount
of data written to 512 byte units.
For the NVM command set, logical blocks written as part of Write operations shall be included in this value. Write
Uncorrectable commands shall not impact this value.
79:64 Host Read Commands: Contains the number of read commands completed by the controller.
For the NVM command set, this is the number of Compare and Read commands.
95:80 Host Write Commands: Contains the number of write commands completed by the controller.
For the NVM command set, this is the number of Write commands.
111:96
Controller Busy Time: Contains the amount of time the controller is busy with I/O commands. The controller is busy
when there is a command outstanding to an I/O Queue (specifically, a command was issued via an I/O Submission
Queue Tail doorbell write and the corresponding completion queue entry has not been posted yet to the associated I/O
Completion Queue). This value is reported in minutes.
127:112 Power Cycles: Contains the number of power cycles.
143:128 Power On Hours: Contains the number of power-on hours. This does not include time that the controller was powered
and in a low power state condition.
159:144 Unsafe Shutdowns: Contains the number of unsafe shutdowns. This count is incremented when a shutdown
notification (CC.SHN) is not received prior to loss of power.
175:160
Media and Data Integrity Errors: Contains the number of occurrences where the controller detected an unrecovered
data integrity error. Errors such as uncorrectable ECC, CRC checksum failure, or LBA tag mismatch are included in
this field.
191:176 Number of Error Information Log Entries: Contains the number of Error Information log entries over the life of the
controller.
195:192
Warning Composite Temperature Time: Contains the amount of time in minutes that the controller is operational
and the Composite Temperature is greater than or equal to the Warning Composite Temperature Threshold
(WCTEMP) field and less than the Critical Composite Temperature Threshold (CCTEMP) field in the Identify
Controller data structure in Figure 90.
If the value of the WCTEMP or CCTEMP field is 0h, then this field is always cleared to 0h regardless of the
Composite Temperature value.
199:196
Critical Composite Temperature Time: Contains the amount of time in minutes that the controller is operational and
the Composite Temperature is greater the Critical Composite Temperature Threshold (CCTEMP) field in the Identify
Controller data structure in Figure 90.
If the value of the CCTEMP field is 0h, then this field is always cleared to 0h regardless of the Composite Temperature
value.
201:200
Temperature Sensor 1: Contains the current temperature reported by temperature sensor 1.
Bits Description
15:00 Temperature Sensor Temperature (TST): Contains the current temperature in degrees
Kelvin reported by the temperature sensor.
The physical point in the NVM subsystem whose temperature is reported by the temperature
sensor and the temperature accuracy is implementation specific. An implementation that does
not implement the temperature sensor reports a temperature of zero degrees Kelvin. The
temperature reported by a temperature sensor may be used to trigger an asynchronous event
203:202 Temperature Sensor 2: Contains the current temperature reported by temperature sensor 2. Refer to bye201:200
205:204 Temperature Sensor 3: Contains the current temperature reported by temperature sensor 3. Refer to bye201:200
207:206 Temperature Sensor 4: Contains the current temperature reported by temperature sensor 4. Refer to bye201:200
209:208 Temperature Sensor 5: Contains the current temperature reported by temperature sensor 5.Refer to bye201:200
211:210 Temperature Sensor 6: Contains the current temperature reported by temperature sensor 6.Refer to bye201:200
213:212 Temperature Sensor 7: Contains the current temperature reported by temperature sensor 7.Refer to bye201:200
215:214 Temperature Sensor 8: Contains the current temperature reported by temperature sensor 8.Refer to bye201:200
511:216 Reserved
Vendor specific (Log Identifier C0-FFh)
Byte Description
101:0 Reserved
PCIe ID
ID name Description PV100 U.2 PV100 M.2
Vendor ID (VID) Vendor ID assigned by PCI-SIG 0x1D40 0x1D40
Device ID (DID) Device ID assigned by vendor 0xB100 0xB100
Subsystem Vendor ID Indicates Sub-system vendor ID 0x1D40 0x1D40
22 of 33 Document Number: 9SPV100-201-M01 Rev 1
Subsystem ID Sub-system identifier 0xB100 0xB100
SMBus Function SMBUS address Function
0x53 Read Subsystem Management Data Structure -- defined by NVMe BMC revision 1.0a
0x1B (Register address 0x05) Get temperature in raw data
Command
Code Bytes Description
00 00 Length of Status: Indicates number of additional bytes to read before encountering PEC.
Always 6 (06h) in this version of the spec.
01 Status Flags (SFLGS): This field indicates the status of the NVM subsystem.
SMBus Arbitration – Bit 7 is set ‘1’ after a SMBus block read is completed all the way to
the
stop bit without bus contention and cleared to ‘0’ if a SMBus Send Byte FFh is received on
this SMBus slave address.
Drive Not Ready – Bit 6 is set to ‘1’ when the subsystem cannot process NVMe management
commands, and the rest of the transmission may be invalid. If cleared to ‘0’, then the
NVM subsystem is fully powered and ready to respond to management commands. This
logic level intentionally identifies and prioritizes powered up and ready drives over their
powered off neighbors on the same SMBus segment.
Drive Functional – Bit 5 is set to ‘1’ to indicate an NVM subsystem is functional. If cleared
to ‘0’, then there is an unrecoverable failure in the NVM subsystem and the rest of the
transmission may be invalid.
Reset Not Required - Bit 4 is set to ‘1’ to indicate the NVM subsystem does not need a reset
to resume normal operation. If cleared to ‘0’ then the NVM subsystem has experienced an
error that prevents continued normal operation. A controller reset is required to resume
normal operation.
Port 0 PCIe Link Active - Bit 3 is set to ‘1’ to indicate the first port’s PCIe link is up (i.e.,
the Data Link Control and Management State Machine is in the DL_Active state). If cleared
to ‘0’, then the PCIe link is down.
Port 1 PCIe Link Active - Bit 2 is set to ‘1’ to indicate the second port’s PCIe link is up. If
cleared to ‘0’, then the second port’s PCIe link is down or not present.
Bits 1-0 shall be set to ‘1’.
02 SMART Warnings: This field shall contain the Critical Warning field (byte 0) of the NVMe SMART
/ Health Information log. Each bit in this field shall be inverted from the NVMe definition (i.e., the
management interface shall indicate a ‘0’ value while the corresponding bit is ‘1’ in the log page).
Refer to the NVMe specification for bit definitions.
If there are multiple controllers in the NVM subsystem, the management endpoint shall combine the
Critical Warning field from every controller such that a bit in this field is:
Cleared to ‘0’ if any controller in the subsystem indicates a critical warning for that
corresponding bit.
Set to ‘1’ if all controllers in the NVM subsystem do not indicate a critical warning for the
corresponding bit.
03 Composite Temperature (CTemp): This field indicates the current temperature in degrees Celsius. If
a temperature value is reported, it should be the same temperature as the Composite Temperature from
the SMART log of hottest controller in the NVM subsystem. The reported temperature range is vendor
specific, and shall not exceed the range -60 to +127°C. The 8 bit format of the data is shown below.
This field should not report a temperature when that is older than 5 seconds. If recent data is not
available, the NVMe management endpoint should indicate a value of 80h for this field.
Value Description
00h-7Eh: Temperature is measured in degrees Celsius (0 to 126C)
7Fh: 127C or higher
80h: No temperature data or temperature data is more the 5 seconds old.
81h: Temperature sensor failure
82h-C3h Reserved
C4 Temperature is -60C or lower
C5-FFh: Temperature measured in degrees Celsius is represented in twos complement (-1
to -59C)
04 Percentage Drive Life Used (PDLU): Contains a vendor specific estimate of the percentage of NVM
subsystem NVM life used based on the actual usage and the manufacturer’s prediction of NVM life. If
an NVM subsystem has multiple controllers the highest value is returned. A value of 100 indicates that
the estimated endurance of the NVM in the NVM subsystem has been consumed, but may not indicate
23 of 33 Document Number: 9SPV100-201-M01 Rev 1
Command
Code Bytes Description
an NVM subsystem failure. The value is allowed to exceed 100. Percentages greater than 254 shall be
represented as 255. This value should be updated once per power-on hour and equal the Percentage
Used value in the NVMe SMART Health Log Page.
06:05 Reserved: Shall be set to 0000h.
07 PEC: An 8 bit CRC calculated over the slave address, command code, second slave address
and returned data. Algorithm is in SMBus Specifications.
08 08 Length of identification: Indicates number of additional bytes to read before encountering PEC.
Always 22 (16h) in this version of the spec.
10:09 Vendor ID: The 2 byte vendor ID, assigned by the PCI SIG. Should match VID in the Identify
Controller command response. MSB is transmitted first.
30:11 Serial Number: 20 characters that match the serial number in the NVMe Identify Controller command
response. First character is transmitted first.
31 PEC: An 8 bit CRC calculated over the slave address, command code, second slave address
and returned data. Algorithm is in SMBus Specifications.
32+ 255:32 Vendor Specific
24 of 33 Document Number: 9SPV100-201-M01 Rev 1
7 NVME DRIVER SUPPORT
NVMe Driver support operating system
OS Version Inbox driver Techman NVMe
Device driver
UEFI Boot
(UEFI 2.3.1)
Legacy Boot
Microsoft
Windows
Windows 10 Support Support Support Support
Windows 8.1 Support Support Support Support
Windows 8 No Support Support
Techman NVMe
driver support(*1)
Techman NVMe
driver support(*1)
Windows 7 No Support Support
Techman NVMe
driver support(*1)
Techman NVMe
driver support(*1)
Windows Server 2016 Support Support Support Support Windows Server 2012
R2 Support Support Support Support
Windows Server 2012 No Support Support
Techman NVMe
driver support(*1)
Techman NVMe
driver support(*1)
Windows Server 2008
R2 No Support Support
Techman NVMe
driver support(*1)
Techman NVMe
driver support(*1)
Red Hat
Enterprise
Linux
RHEL 6.5 - 6.6 No Support Support
Not support
Bootable(*2) Support
RHEL 6.7 - 6.8 Support Support
Not support
Bootable(*2) Support
RHEL 7.0 - 7.3 Support Support Support Support
SUSE Linux
Enterprise
11 SP3
11 SP4 No Support Support
Not support
Bootable(*2)
Not support
Bootable(*2)
12 / SP1 / SP2 Support Support Support Support
CentOS
6.5 – 6.6 No Support Support
Not support
Bootable(*2)
Not support
Bootable(*2)
6.7 – 6.8 Support Support
Not support
Bootable(*2)
Not support
Bootable(*2)
7.0 – 7.3 Support Support Support Support
Ubuntu
Server
12.04 No Support Support
Not support
Bootable(*2)
Not support
Bootable(*2)
14.04 14.10
15.04 15.10
16.04 16.10
Support Support Support Support
Debian
7.8 No Support Support
Not support
Bootable(*2)
Not support
Bootable(*2)
8.1
8.2
8.3
Support Support Support Support
VMware
6.0
6.5 Support N/A Support Support
5.5 Vmware NVMe
driver support(*3) Vmware NVMe
driver support(*3) Vmware NVMe
driver support(*3)
Vmware NVMe
driver support(*3)
Citrix
XenServer
6.5 SP1 Citrix NVMe
driver support(*4) N/A
Not support
Bootable(*2) Support
7.0 – 7.1 Support N/A Support Support Note: (*1) NVMe device driver requirement
(*2) OS does not support NVMe Booting
(*3) Vmware device driver requirement
(*4) Citrix device driver requirement
25 of 33 Document Number: 9SPV100-201-M01 Rev 1
8 RELIABILITY
MTBF
> 2,000,000 POH (operating temperature between 0°C ~ 55°C.)
UBER
≤ 10−17 (unrecoverable bit error rate)
Data Retention 40 C at 3 months
Limited Warranty Condition (Period or PBW)
Capacity Flash Type DWPD Product Warranty
Policy (PBW)
Product Warranty
Policy (Period)
PV100E55-240 15nm eMLC 0.9 DWPD 0.394 PBW 5 years
PV100E55-400
PV100E5B-400 15nm eMLC 2.3 DWPD 1.679 PBW 5 years
PV100E55-480
PV100E5B-480 15nm eMLC 0.9 DWPD 0.788 PBW 5 years
PV100E55-800
PV100E5B-800 15nm eMLC 2.3 DWPD 3.358 PBW 5 years
PV100E55-960
PV100E5B-960 15nm eMLC 0.9 DWPD 1.576 PBW 5 years
PV100E55-1600
PV100E5B-1600 15nm eMLC 2.3 DWPD 6.716 PBW 5 years
PV100E55-1920
PV100E5B-1920 15nm eMLC 0.9 DWPD 3.153 PBW 5 years
PV100C55-240 15nm cMLC 0.3 DWPD 0.131 PBW 5 years
PV100C55-400
PV100C5B-400 15nm cMLC 0.7 DWPD 0.511 PBW 5 years
PV100C55-480
PV100C5B-480 15nm cMLC 0.3 DWPD 0.262 PBW 5 years
PV100C55-800
PV100C5B-800 15nm cMLC 0.7 DWPD 1.022 PBW 5 years
PV100C55-960
PV100C5B-960 15nm cMLC 0.3 DWPD 0.525 PBW 5 years
PV100C55-1600
PV100C5B-1600 15nm cMLC 0.7 DWPD 2.044 PBW 5 years
PV100C55-1920
PV100C5B-1920 15nm cMLC 0.3 DWPD 1.052 PBW 5 years
Capacity Flash Type Product Warranty
Policy (TBW)
Product Warranty
Policy (Period)
PV100D5N-128 15nm cMLC 60 TBW 3 years
PV100D5N-256 15nm cMLC 125 TBW 3 years
PV100D5N-512 15nm cMLC 250 TBW 3 years
26 of 33 Document Number: 9SPV100-201-M01 Rev 1
9 ENVIRONMENTAL CONDITIONS
Ambient Temperature
PARAMETER OPERATING Non-OPERATING UNIT
2.5 inch(*1) 0 ~ 40 (Ambient)
0 ~ 70 (Case) (*2) -55 to 95 °C
M.2(*1) 0 ~ 55 (Ambient)
0 ~ 70 (Surface) (*3) -55 to 95 °C
Note: (*1) Airflow requirement
(*2) Measuring case temperature
(*3) Measuring PCB surface temperature
Airflow Requirements
Capacity unit Ambient = 25C Ambient = 35C
128GB
240GB
256GB LFM 450 550
400GB
480GB
512GB LFM 550 750
800GB
960GB LFM 750 900
1600GB
1920GB LFM 750 900
Temp. Gradient
PARAMETER OPERATING Non-OPERATING UNIT
Temperature 30 (Max) 30 (Max) °C/hr
Humidityii
PARAMETER OPERATING Non-OPERATING UNIT
Relative Humidity
(non-condensing) 5 to 95 5 to 95 %
Vibration
PARAMETER OPERATING Non-OPERATING UNIT
U.2 3.01 Grms (Random,
2.5~500 Hz
4.9 Grms (Random,
5~800 Hz
M.2
Shock
PARAMETER OPERATING Non-OPERATING UNIT
U.2 1000G/0.5ms 1000G/0.5ms
M.2 1000G/0.5ms 1000G/0.5ms
Drop
PARAMETER Weight Height UNIT
Drop (1 corner, 3 edges,
6 surfaces) 1.55 kg 91 cm Packaged
ESD
PARAMETER Level UNIT
Contact discharge 4 KV
Air discharge 8 KV
ii Should under the condition without condensation.
27 of 33 Document Number: 9SPV100-201-M01 Rev 1
10 RESTRICTED MATERIALS CONTENT
No usage of prohibited chemical substances. The chemical substances, which defined in
TECHMAN "Environmental Requirements for materials parts and products" document. (9999999-
201-M03.PDF) never be used not only in components but also production process of both this
products and components.
28 of 33 Document Number: 9SPV100-201-M01 Rev 1
11 LABEL
Drive Labels
The “Safety and Series number label” are located on the top cover.
The “Safety label” contains the following information.
PV100 series (U.2)
(1) Solid state drive
(2) Series
(3) Certification marks (UL / cUL, TÜ V, IC, CE, C-Tick, Korean EMC, Taiwan EMC)
(4) Model number and capacity
(5) Product number
(6) Barcode of product number
(7) Series number (YY: year / WW: week / 1: default / PPPPPP: number)
(8) Barcode of series number
(9) F/W version
C US
R
E364818
D43014
29 of 33 Document Number: 9SPV100-201-M01 Rev 1
PV100- series (M.2)
(1) Solid state drive
(2) Series
(3) Certification marks (UL / cUL, TÜ V, IC, CE, C-Tick, Korean EMC, Taiwan EMC)
(4) Model number and capacity
(5) Product number
(6) Series number (YY: year / WW: week / 1: default / PPPPPP: number)
(7) F/W version
(8) 2D barcode of product number and series number
C US
R
E364818
D43014
30 of 33 Document Number: 9SPV100-201-M01 Rev 1
12 AGENCY CERTIFICATES
Safety Regulation
UL UL60950-1 Second Edition
C-UL CSA C22.2 No. 60950-1-07, 2nd Edition
TUV EN 60950-1:2006 + A11:2009 +A1:2010+A12:2011+A2:2013
CB IEC 60950-1:2005(Second Edition) + Am 1:2009 + Am 2:2013
EMC
FCC FCC CFR 47 Part 15 Subpart B/Oct. 2013 and CISPR 22/1997 ANSI C63.4-2009
ICES-003 Issue 5 Aug. 2012
*CE Marking EN55022:2010 +AC:2011, Class B
EN61000-3-2:2006 +A1:2009 +A2:2009 and EN61000-3-3:2013
EN55024:2010
IEC61000-4-2:2008, IEC61000-4-3:2010,
IEC61000-4-4:2012, IEC61000-4-5:2005,
IEC61000-4-6:2013, IEC61000-4-8:2009
IEC61000-4-11:2004)
*C-Tick AS/NZS CISPR 22:2009 +A1:2010, RULES AND REGULATIONS OF CLASS B (CISPR 22 Ed.
6.0:2008)
Taiwan EMC CNS 1343 (C6357
VCCI VCCI V-2/Apr. 2012 and V-3/Apr. 2013 and V-4/Apr. 2012
31 of 33 Document Number: 9SPV100-201-M01 Rev 1
13 REVISION HISTORY
Rev. No. Reason for Release Release Date TECHMAN
0.90 Preliminary September 30, 2016 Samuel Chen
1.00 First release April 14, 2017 Samuel Chen
1.01 Modify performance SPEC ( Page 11-12)
Add Product number list ( Page 35) May 12, 2017 Samuel Chen
32 of 33 Document Number: 9SPV100-201-M01 Rev 1
APPENDIX A MAX PERFORMANCE TEST EQUIPMENT
BIOS Configuration
Speed Step: Disabled
Turbo Boost: Disabled
CPU Power and Performance Policy: Performance
CPU C-state : Disabled
Virtualization : Disabled
Windows Configuration
FIO
Direct: Yes
thread:
o 128K Precondition I/O: 1 outstanding I/O
o 4KB Random I/O: 64 outstanding I/O
o 128KB Seq. I/O: 32 outstanding I/O
Ramp Time: 5 seconds
Run Time:30 seconds
Norandommap: 1
I/O Engine: windowsaio
Numjobs: 1
Iometer
Queue depth:
o 128K Precondition I/O: 1 worker with 1 outstanding I/O
o 4KB Random I/O: 1 worker with 64 outstanding I/O
o 128KB Seq. I/O: 1 worker with 32 outstanding I/O
Ramp Time: 5 seconds
Run Time:30 seconds
Linux Configuration
FIO
Direct: Yes
Queue depth
o 128K Precondition I/O: 1 outstanding I/O
o 4KB Random I/O: 64 outstanding I/O
o 128KB Seq. I/O: 32 outstanding I/O
Ramp Time: 5 seconds
Run Time:30 seconds
Norandommap: 1
I/O Engine: libaio
Numjobs: 1
Vdbench
Iorate : max
Threads :128
Elapsed : 5 seconds
Run Time: 30 seconds
Override : 4
Multi JVM execution (jvms) : 4
33 of 33 Document Number: 9SPV100-201-M01 Rev 1
APPENDIX B SSD PRODUCT NUMBER LIST
U.2 (SFF-8639) Product Number Flash type Capacity Model Name PLP
support
9PV100E554B2TQ1 TOSHIBA 15nm enterprise Multi Level Cell (eMLC) 240GB PV100E55-240 YES
TOSHIBA 15nm enterprise Multi Level Cell (eMLC) 400GB PV100E55-400 YES
TOSHIBA 15nm enterprise Multi Level Cell (eMLC) 480GB PV100E55-480 YES TOSHIBA 15nm enterprise Multi Level Cell (eMLC) 800GB PV100E55-800 YES TOSHIBA 15nm enterprise Multi Level Cell (eMLC) 960GB PV100E55-960 YES TOSHIBA 15nm enterprise Multi Level Cell (eMLC) 1600GB PV100E55-1600 YES TOSHIBA 15nm enterprise Multi Level Cell (eMLC) 1920GB PV100E55-1920 YES TOSHIBA 15nm enterprise Multi Level Cell (eMLC) 240GB PV100C55-240 YES
TOSHIBA 15nm Client Multi Level Cell (cMLC) 400GB PV100C55-400 YES 9PV100C554B4TQ1 TOSHIBA 15nm Client Multi Level Cell (cMLC) 480GB PV100C55-480 YES TOSHIBA 15nm Client Multi Level Cell (cMLC) 800GB PV100C55-800 YES 9PV100C558B6TQ1 TOSHIBA 15nm Client Multi Level Cell (cMLC) 960GB PV100C55-960 YES TOSHIBA 15nm Client Multi Level Cell (cMLC) 1600GB PV100C55-1600 YES TOSHIBA 15nm Client Multi Level Cell (cMLC) 1920GB PV100C55-1920 YES
M.2 2280 Product Number Flash type Capacit
y
Model Name PLP
support
TOSHIBA 15nm Client Multi Level Cell (cMLC) 128GB PV100D5N-128 No 9PV100D5N4B2TQ1 TOSHIBA 15nm Client Multi Level Cell (cMLC) 256GB PV100D5N-256 No 9PV100D5N8B4TQ1 TOSHIBA 15nm Client Multi Level Cell (cMLC) 512GB PV100D5N-512 No
M.2 22110 Product Number Flash type Capacit
y
Model Name PLP
support
TOSHIBA 15nm enterprise Multi Level Cell (eMLC) 400GB PV100E5B-400 YES
TOSHIBA 15nm enterprise Multi Level Cell (eMLC) 480GB PV100E5B-480 YES
9PV100E5B8B5TQ1 TOSHIBA 15nm enterprise Multi Level Cell (eMLC) 800GB PV100E5B-800 YES
9PV100E5B8B6TQ1 TOSHIBA 15nm enterprise Multi Level Cell (eMLC) 960GB PV100E5B-960 YES
9PV100E5B9B7TQ1 TOSHIBA 15nm enterprise Multi Level Cell (eMLC) 1600GB PV100E5B-1600 YES
9PV100E5B9BGTQ1 TOSHIBA 15nm enterprise Multi Level Cell (eMLC) 1920GB PV100E5B-1920 YES
9PV100C5B8B3TQ1 TOSHIBA 15nm Client Multi Level Cell (cMLC) 400GB PV100C5B-400 YES
9PV100C5B8B4TQ1 TOSHIBA 15nm Client Multi Level Cell (cMLC) 480GB PV100C5B-480 YES
9PV100C5B8B5TQ1 TOSHIBA 15nm Client Multi Level Cell (cMLC) 800GB PV100C5B-800 YES
9PV100C5B8B6TQ1 TOSHIBA 15nm Client Multi Level Cell (cMLC) 960GB PV100C5B-960 YES
9PV100C5B9B7TQ1 TOSHIBA 15nm Client Multi Level Cell (cMLC) 1600GB PV100C5B-1600 YES
9PV100C5B9BGTQ1 TOSHIBA 15nm Client Multi Level Cell (cMLC) 1920GB PV100C5B-1920 YES