Since 1972 Poweringthe Future - SEMI COMPANY PRESENTAT… · Semi Networking Day – Milano 20 Settembre 2012 1 C o r p o r a t e P r o f i l e C o r p o r a t e P r o f i l e Since

Semi Networking Day – Milano 20 Settembre 2012 1

Since 1972 Since 1972 PoweringPowering the Futurethe Future

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Semi Networking Day – Milano 20 Settembre 2012


• LPE

Vision : to help develop Energy Efficient Solutions

Mission : To be the market & technology leader in epitaxial technologies for Smart Power Management and Sensor Solutions

Vision & Mission Vision & Mission

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• LPE is a worldwide specialist in epitaxial technologies

for Power Management , Power Saving and Sensor

applications

• Our clear mission is to provide our Customers with

leading edge equipment and process solutions for

advanced and traditional discrete devices , new

generation sensors , improving Customers' process

performance , lowering environmental impact and

lowering manufacturing costs

Our strengthsOur strengths

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• We provide epitaxy reactors for silicon and silicon carbide

built around LPE proprietary reaction chambers and core

technology IP

• Our reactors are particularly suited for thick and very

thick epi layers on substrates and patterned wafers ,

maintaining quality standards typical of thin epi layers

• Our Customers are both devices makers and epi houses ,

operating worldwide

Our strengthsOur strengths

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Historical factsHistorical facts

1972.1972.

PretiPreti Engineering ( now LPE ) designs and manufactures the first Engineering ( now LPE ) designs and manufactures the first

silicon Epitaxial Reactor in Europe.silicon Epitaxial Reactor in Europe.

Almost 40 years later LPE reactors are still the preferred toolAlmost 40 years later LPE reactors are still the preferred tools to s to

grow EPI layers for discrete and power applications.grow EPI layers for discrete and power applications.

Over 400 reaction chambers are in operation in more than 30 Over 400 reaction chambers are in operation in more than 30

leading semiconductor companies. leading semiconductor companies.

LPE has become a global leader by offering the most advanced LPE has become a global leader by offering the most advanced

equipment for Epitaxial Deposition.equipment for Epitaxial Deposition.

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Worldwide organizationWorldwide organization

SUBSIDIARIES

ETC Italy

LPE Shanghai

Headquarters Milan, ItalyHeadquarters Milan, Italy

AGENTS

Japan

USA

Taiwan

South Korea

Czech

Republic

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EuroEuro USD USD avgavg

20042004 11.1 ME11.1 ME 13.8 M$13.8 M$

20052005 17.9 ME17.9 ME 22.2 M$22.2 M$

20062006 19.8 19.8 MEME 24.8 M$24.8 M$

20072007 16.6 16.6 MEME 22.7 M$22.7 M$

20082008 13.1 13.1 MEME 19.2 M$19.2 M$

20092009 5.4 5.4 MEME 7.6 M$7.6 M$

2010 2010 19.4 ME 19.4 ME 27.0 M$27.0 M$

20112011 43.0 ME43.0 ME 60.0 M$60.0 M$

20122012 1717--25 ME budget 25 ME budget

RevenueRevenue

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PE 3061 D

PE2061 S

Installed Base: >140Located in all world regions since 1992

Silicon Epitaxy O

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Silicon Equipment Product LineSilicon Equipment Product Line

Installed Base: > 130 Located in all world regions since 2000


InventaPro (CVD)Installed Base:

3 in Japan

3 in Europe

ACiS

SiC Epitaxy SiC Bulk (R&D)O

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Subli100 (PVT)

SiC Equipment Product Line SiC Equipment Product Line (since 2008)(since 2008)


Silicon and Silicon CarbideSilicon and Silicon Carbide

CustomersCustomers

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EuropeEurope


North AmericaNorth America

Undisclosed

Customer


Korea & JapanKorea & Japan

Undisclosed

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Yanhe Factory

China & TaiwanChina & Taiwan

Fushun


…….and.and SingaporeSingapore


LPE Group innovation LPE Group innovation

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Extend the application of LPE know-how to the following domains :

• Power Management / Power Saving

- Silicon epitaxy

- SiC homo & hetero epitaxy

- Other WBG materials

LPE Group strategyLPE Group strategy

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LPE Mission :

• Equipment for epitaxy (Si and SiC)

• Design

• Manufacturing

• Sales

ETC Mission :

• Epitaxial growth processes

• Epitaxial wafers supply

LPE Group strategyLPE Group strategy

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Since 1972 Since 1972 PoweringPowering the Futurethe Future

ETCETC

EEpitaxial pitaxial TTechnology echnology CCenterenter

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• Epitaxy experts SILICON and SiC

• Significant effort and investment made to develop SiC

epi and know-how on substrate growth technology

• SiCiLab R&D lab with CNR support & staff inside ETC

• ENIAC European projects:

• 150 mm SiC epi

• 300mm Silicon

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ETC Key FactsETC Key Facts


ETC ETC EpitaxyEpitaxy ServiceService

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C• ETC offers a complete range of SiC Epitaxy specifications

on wafers from 2” to 200mm diameter

• 4H SiC blanket homoepitaxial layer, with a wide range of

thicknesses and doping concentrations for both n and p-type

doping

• A unique multistep high-growth-rate (HGR) epitaxial process

for complex p-n junctions structures

• A patented Virtual Substrate process for high thickness

(>100µm) and low doping (<5x1013at/cm3) for sensors

applications

• 3C SiC heteroepitaxy on silicon on any diameter up to

200mm and most silicon orientations for MEMS application



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ETC offers silicon epitaxial process development

• IGBT multiple structures

• Custom processes

•Very high thickness >150 µm

•Very high resistivity >1000 Ωcm

•High doping substrates: Red phosphorus, Arsenic

• Silane + TCS processes

• High temperature processes >1200°C



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• Internal characterization capability

• Layer thickness mapping: FTIR QS2200

• Carrier concentration mapping and in-depth profiling:

CV Mercury probe SSM 495

• Nikon automatic inspection for defects mapping (bright

field, dark field, DIC, confocal)



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C• In the SiCilab (www.sicilab.it)

• X-Ray diffraction

• Polar figures

• Rocking curve maps

• Stress measurements

• Optical characterization

• µ-Raman map

• µ-Photoluminescence map

• time-resolved photoluminescence

• Electrical characterization

• I-V and C-V by device test patterns

• DLTS

• Stress characterization by test structures (3C-SiC)



SiCSiC MEMS test structuresMEMS test structuresE

TC

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microstructures:

V1 V2

Beams (Cantilevers)

“Bicycle Wheels”

Planar rotatingsensors

SpiralsTensileStress

compressive Stress


ETC ETC SiCSiC

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ETC SiliconETC Silicon

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谢谢谢谢谢谢谢谢

thank youdanke

有難うございました。有難うございました。有難うございました。有難うございました。

obrigado

kiitos

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gracias

спасибо

dzięki

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спасибі

ขอบคณ

nhờ

tack

shukrani

hvalavďaka

хвала

mul ţumiri

ر

grazzi

terima kasih

благодарамačiū

paldies

감사감사감사감사

raibh maith agat

köszönöm

धयवाद

תודה

ευχαριστίες

grazas

mercisalamat

tänanbedankt tak

díky

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благодаря

дзякуй را

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dankie

მადლობამადლობამადლობამადლობა

GrazieGrazie

Documents

Since 1972 Poweringthe Future - SEMI COMPANY PRESENTAT… · Semi Networking Day – Milano 20 Settembre 2012 1 C o r p o r a t e P r o f i l e C o r p o r a t e P r o f i l e Since