KIT – Universität des Landes Baden-Württemberg undnationales Großforschungszentrum in der Helmholtz-Gemeinschaft

Institut für Experimentele Kernphysik,

www.kit.edu

Simulation results on p-stop atoll depth/conc and p-stop common unirradiated

IEKP, KIT2 May 13th, 2014 Simulation WG meeting May 13th, 2014

Simulations of different doping depths and conc.for the p-stop atoll configuration

p-stop atoll configuration

decided to go with 2 strips due to large simulation matrix

goal: dependence of electric field strength on doping depths

varied n+ implant from 1um to 3 um in 0.5um steps (conc. fixed to 1e19cm-3)

varied p+ implant from 1um to 3um in 0.5um steps

varied doping conc. of p-stop from 5e15 cm-3 to 5e16 cm-3

effective 2-trap proton model with

fixed oxide charge Qf=1e12 cm-2

F=1e15 neq/cm2

MIP injection

pitch = 90um

w/p = 0.22

pstop width = 6um

ps: p-stop dist. from n+ edge = 25um

electrode #1 electrode #2

ps

IEKP, KIT3 May 13th, 2014 Martin Strelzyk – Simulation results on pstop doping depth and concentation

Results on electric field and charge sharingn+ doping depth = 2um, conc. = 1e19cm-3

in increasing p-stop depth, the charge sharing decreases

with increasing p-stop concentration, the charge sharing appears at lower doping depths

here not shown as curves are directly overlapping:

n+ depth does not affect charge sharing at all!

with increasing p-stop concentration the maximum eField in the bulk increases as well.

is it possible to set the range of the doping concentrations of p-stop and n+ with T-CAD?

here not shown as curves are directly overlapping:

n+ depth does not affect max. eField in bulk!

IEKP, KIT4 May 13th, 2014 Martin Strelzyk – Simulation results on pstop doping depth and concentation

Matrix of max. electric field

Synopsys manual:

CurrentPlot { ElectricField (Maximum (Material=„Silicon“))}

5 stripsT=-20°CV=-600Vp+= 5e16 cm-3

n+= 1e19 cm-3

n=1ump=1um

n=2ump=2um

IEKP, KIT5 May 13th, 2014 Martin Strelzyk – Simulation results on pstop doping depth and concentation

p-stop common configuration

simulated geometry like before with p-stop common as set during last meeting

unirradiated: no implications on break-down or critical regions of high electric field strength

IEKP, KIT6 May 13th, 2014 Martin Strelzyk – Simulation results on pstop doping depth and concentation

Summary

n+ implant seems not to be critical in max electrical field

p+ in contrary affects max. electric fields significantly

dependend on p-stop conc.

dependend on p-stop depth