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DATA SHEET
SILICON TRANSISTOR
NE68033 / 2SC3585MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISOR
DATA SHEET
Document No. P10361EJ4V1DS00 (4th edition)Date Published March 1997 N
DESCRIPTIONThe NE68033 / 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. The NE68033 / 2SC3585 features excellent power gain with very low-noise figures. The NE68033 / 2SC3585 employs direct nitride passivated base surface process (DNP process) which is a proprietary new fabrication technique which provides excellent noise figures at high current values. This allows excellent associated gain and very wide dynamic range.
FEATURES
• NF 1.8 dB TYP. @f = 2.0 GHz• Ga 9 dB TYP. @f = 2.0 GHz
ABSOLUTE MAXIMUM RATINGS (T A = 25 ��C)Collector to Base Voltage VCBO 20 VCollector to Emitter Voltage VCEO 10 VEmitter to Base Voltage VEBO 1.5 VCollector Current IC 35 mATotal Power Dissipation PT 200 mWJunction Temperature Tj 150 �CStorage Temperature Tstg �65 to +150 �C
ELECTRICAL CHARACTERISTICS (T A = 25 ��C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO 1.0 �A VCB = 10 V, IE = 0
Emitter Cutoff Current IEBO 1.0 �A VEB = 1 V, IC = 0
DC Current Gain hFE * 50 100 250 VCE = 6 V, IC = 10 mA
Gain Bandwidth Product fT 10 GHz VCE = 6 V, IC = 10 mA
Feed-Back Capacitance Cre ** 0.3 0.8 pF VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain �S21e�2 6.0 8.0 dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz
Maximum Available Gain MAG 10 dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz
Noise Figure NF 1.8 3.0 dB VCE = 6 V, IC = 5 mA, f = 2.0 GHz
* Pulse Measurement PW � 350 �s, Duty Cycle � 2 %** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.
hFE Classification
Class R43/Q * R44/R * R45/S *
Marking R43 R44 R45
hFE 50 to 100 80 to 160 125 to 250
* Old Specification / New Specification
PACKAGE DIMENSIONS(Units: mm)
1.5
2
1 3
Marking
PIN CONNECTIONS 1. 2. 3.
EmitterBaseCollector
2.8±0.2
2.9±
0.2
1.1
to 1
.4
0 to
0.1
0.95
0.3
0.95
0.4
+0.
1−0
.05
0.4
+0.
1−0
.05
0.16
+0.
1−0
.06
0.65+0.1−0.15
JEITAPart No.
DISCONTIN
UED
2
TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs.AMBIENT TEMPERATURE
200
100
0
10
20
50
100
200
50
1 5 10 500.5
100 150
TA-Ambient Temperature-°C
IC-Collector Current-mA
DC CURRENT GAIN vs.COLLECTOR CURRENT
PT-T
otal
Pow
er D
issi
patio
n-W
hFE-
DC
Cur
rent
Gai
n
VCE = 6 V
IC-Collector Current-mA
INSERTION GAIN vs.COLLECTOR CURRENT
|S21
e|2 -Ins
ertio
n G
ain-
dB
0.1
0.5
0.3
0.2
0.7
1
3
2
1 32 5 7 10 20 30VCB-Collector to Base Voltage-V
FEED-BACK CAPACITANCE vs.COLLECTOR TO BASE VOLTAGE
Cre-F
eed-
back
Cap
acita
nce-
pF
f = 1.0 MHz
0
2
4
6
10
8
1 32 5 7 10 20 30
0
12
8
4
16
20
0.1 0.30.2 0.5 7.0 1.0 2.0 3.0f-Frequency-GHz
INSERTION GAIN, MAXIMUM AVAILABLEGAIN vs. FREQUENCY
MAG
-Max
imum
Ava
ilabl
e G
ain-
dB|S
21e|2 -I
nser
tion
Gai
n -d
B
VCE = 6 VIC = 10 mA
5
3
2
7
10
30
20
1 32 5 7 10 20 30IC-Collector Current-mA
GAIN BANDWIDTH PRODUCT vs.COLLECTOR CURRENT
fT-G
ain
Band
wid
th P
rodu
ct-M
Hz
VCE = 6 V
Free Air
|S21e|2
MAG
VCE = 6 Vf = 2.0 GHz
NE68033 / 2SC3585
DISCONTIN
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3
0
2
1
5
4
3
7
6
0.5 1 5 10 50 70IC-Collector Current-mA
NOISE FIGURE vs.COLLECTOR CURRENT
NF-
Noi
se F
igur
e-dB
VCE = 6 Vf = 2.0 GHz
S-PARAMETERVCE = 6.0 V, IC = 3.0 mA, ZO = 50
f (MHz) S11 S11 S21 S21 S12 S12 S22 S22
200400600800
100012001400160018002000
0.8580.7240.5800.4570.3620.3040.2320.1790.1470.108
23.140.651.158.965.673.182.284.988.2
104.1
8.4996.9235.9514.6154.1343.4123.1802.7632.7262.378
153.3131.6118.4104.998.088.982.075.770.564.9
0.0300.0600.0800.0990.1060.1290.1480.1540.1880.197
46.558.760.360.261.261.160.159.558.756.8
0.9050.8260.7490.6660.6140.5740.5420.5140.4830.455
13.521.227.028.630.130.031.735.240.142.6
VCE = 6.0 V, IC = 10.0 mA, ZO = 50
f (MHz) S11 S11 S21 S21 S12 S12 S22 S22
200400600800
100012001400160018002000
0.6130.4060.2850.2140.1560.1300.1050.0650.0420.018
37.053.656.057.658.154.256.555.048.965.6
16.14110.0967.6405.5644.7873.8763.5733.0582.9972.590
133.9111.5101.490.786.079.374.069.465.360.7
0.0210.0530.0640.0890.0950.1190.1410.1580.1780.202
52.570.673.071.770.670.368.368.966.566.2
0.7810.6510.5900.5480.5260.5060.4890.4700.4390.426
19.422.424.022.823.322.124.827.931.436.5
NE68033 / 2SC3585
DISCONTIN
UED
4
S-PARAMETER
ANG
LEO
FRE
FLEC
TIO
NCO
EFFC
IENT
INDE
GRE
ES 20
30
40
50
0060
708090100
110
120
130
140
150
−160
−150
−140
−130
−120
−110−100 −90 −80
−70
−60
−50
−40
−30
−20−10
010
0.280.22
0.300.20
0.32
0.18
0.34
0.160.360.14
0.380.12
0.400.10
0.420.08
0.440.0
6
0.460.
04
0.21
0.19
0.17
0.150.130.11
0.09
0.07
0.05
0.03
0.29
0.31
0.33
0.350.370.39
0.41
0.43
0.45
0.47
0.02
0.48
0.01
0.49
0 00.
49 0.01
0.48 0.02
0.47 0.03
0.46 0.
040.4
5 0.05
0.44 0.0
6
0.43 0.07
0.42 0.08
0.41 0.09
0.400.10
0.390.11
0.380.12
0.370.13
0.360.14 0.35
0.15 0.34
0.160.33
0.17
0.32
0.18
0.310.19
0.300.20
0.290.21
0.280.22
0.270.23
0.260.24
52.0
52.0
0.240.26
0.230.27
WAV
ELEN
GTH
STO
WAR
DLO
AD
WAV
ELEN
GTH
STO
WAR
DGE
NERA
TOR
2.0
50
10
6.0
4.0
3.0
1.8
1.61.
41.20.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.1
( +JX
–––
–
ZO
)
0.2
0.4
0.6
0.8
1.0
0.80.
7
0.6
0.3
0.2
0.1
0.2
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.4
0.5
5.0
10
50
3.0
4.0
1.8
2.0
1.20.10.9 1.
4
1.6
REACTANCE COMPONENT
( R –––– ZO )
NEGATIVEREA
CTAN
CE CO
MPO
NENT
POSIT
IVE R
EACT
ANCE
COMPONENT
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0 10 200
(−JX
–––
–
Z
O)
20
20
0.2
0.4
0.6
0.8
1.0
S11e, S22e-FREQUENCY
S21e-FREQUENCY
90°
0°
30°
−30°
60°
−60°
180°
150°
−150°
120°
−120°
−90°
40 8 12 16 20
S21e
0.2 GHz
0.2 GHz
1.0 GHz
1.0 GHz 2.0 GHz2.0 GHz
IC = 3 mA
IC = 10 mA
90°
0°
30°
−30°
60°
−60°
180°
150°
−150°
120°
−120°
−90°
0.040 0.08 0.12 0.16 0.20
S12e
2.0 GHz
IC = 10 mA
IC = 3 mA
S12e-FREQUENCY
VCE = 6 V200 MHz Step
CONDITION
VCE = 6 VCONDITION VCE = 6 VCONDITION
2.0 GHz
2.0 GHz
0.2 GHz
0.2 GHz
IC = 3 mA
S11e
S22e
S22eIC = 10 mA
0.2 GHz
NE68030 / 2SC3585
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UED
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