MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)

1

SiGe BiCMOS Device Modeling

Evaluation of HiCUM for Modeling DC, S-parameter and Large-Signal Characteristics of SiGe HBTs

M.R.Murty, D.Sheridan, D.Ahlgren and D.HarameCommunications R&D Center

IBM MicroelectronicsEssex Junction, VT

MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)

2

SiGe BiCMOS Device Modeling

•Transistor Structures used for Parameter Extraction:

(0.32, 0.48, 0.64, 0.96) m x 8.4 m with a CBEBC layout

•Scaling by TRADICA and Models extracted on structures with a CBE layout

•Simulations and Optimizations done in ADS2001 & ADS2002.

•Technology Details:High-Speed and High-Breakdown Versions with ~47GHz and 27 GHz fT and BVCEO of ~3.5V and 5.5V.

Model Extraction Methodology and Technology Details

MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)

3

SiGe BiCMOS Device Modeling

Parameter Extraction

•Base Resistance Ring-Emitter Structures (several W’s and 2 L’s)•Emitter Resistance Modified Open-Collector Method •Collector Resistance Test Structures•Capacitances Cold S-Params + Large area monitors

•Avalanche Parameters: Ib vs Vbc Characteristics•Current Parameters Gummels and Output Curves

•Transit Time Parameters: Test Transistors (several W’s and one long L)

MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)

4

SiGe BiCMOS Device ModelingIc

& I

b (

A)

Gummel Curves and Forward Gain -0.32 um x 16.8 um, HB device

MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)

5

SiGe BiCMOS Device Modeling

Output Curves -0.32 um x 16.8 um, HB device

MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)

6

SiGe BiCMOS Device Modeling

S-Parameter Results

• Bias Points: Vbe = 0.82 V, 0.90 V, 0.93 V and Vce = 2 V. (1 below ft peak, one at peak ft and one past ft peak)

• Frequency range: 2-40 GHz.

• Optimizations were done using Y-parameters (in ADS).

• Ft-Ic: Vcb = -0.3, 0, 1.0, 2.0, 3.0 V

MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)

7

SiGe BiCMOS Device Modeling

Ph

ase(

S11

)

S11 -0.32 um x 16.8 um, HB device

o Vbe = 0.82 V, Vce= 2 V, o Vbe = 0.90 V, Vce= 2 V, o Vbe = 0.93 V, Vce= 2 V, __ Model

MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)

8

SiGe BiCMOS Device Modeling

o Vbe = 0.82 V, Vce= 2 V, o Vbe = 0.90 V, Vce= 2 V, o Vbe = 0.93 V, Vce= 2 V, __ Model

S21 -0.32 um x 16.8 um, HB device

MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)

9

SiGe BiCMOS Device Modeling

o Vbe = 0.82 V, Vce= 2 V, o Vbe = 0.90 V, Vce= 2 V, o Vbe = 0.93 V, Vce= 2 V, __ Model

S12 -0.32 um x 16.8 um, HB device

MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)

10

SiGe BiCMOS Device Modeling

o Vbe = 0.82 V, Vce= 2 V, o Vbe = 0.90 V, Vce= 2 V, o Vbe = 0.93 V, Vce= 2 V, __ Model

S22 -0.32 um x 16.8 um, HB device

MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)

11

SiGe BiCMOS Device Modeling

o Vbe = 0.82 V, Vce= 2 V, o Vbe = 0.90 V, Vce= 2 V, o Vbe = 0.93 V, Vce= 2 V, __ Model

|H21| and MAG/MSG -0.32 um x 16.8 um, HB device

MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)

12

SiGe BiCMOS Device Modeling

o Measurement__ Model

(Vcb = -0.3, 0, 1, 2, 3 V)

|fT vs Ic -0.32 um x 16.8 um, HB device

MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)

13

SiGe BiCMOS Device Modeling

Intermodulation Distortion Results

• Measurements done using ATN Load-pull system and Simulations Using Harmonic Balance

• 2-tone Simulations and Intermodulation Distortion with 50 termination, Sheridan, Murty and others CMC,April 2001 (PortoRico) & present work

• 1-tone Simulations and harmonic Distortion with a 50 termination Schroter et.al., IEEE TED, 47, pp1529-1535 (2000)

• 2-tone Intermodulation Distortion with matched load and source Murty et.al., (To be published)

MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)

14

SiGe BiCMOS Device ModelingP

out,

IM

3, I

M5

(dB

m)

Ic &

Ib

(mA

)

o Vbe = 0.9109 V, Vce= 2 V,f= 900 MHz, =0.1 MHz

|Pout, IM3, IM5, Ic and Ib -0.32 um x 16.8 um, HB device

__ Hicum simulations using Harmonic Balance

__ Hicum

MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)

15

SiGe BiCMOS Device Modeling

Conclusions

• Hicum Model is developed for a SiGe process and good fits demonstrated for DC, S-parameter and Large-signal characteristics.

• The simulations were done in ADS2001/02 and the model implementation is found to be robust. (at least at the device level)

MURTY, SHERIDAN,AHLGREN, HARAME Hicum Users’ Group Meeting (BCTM2002)

16

SiGe BiCMOS Device Modeling

ACKNOWLEDGEMENTS

Thanks to M.Schroter, K.Newton, W.Ansley for many useful discussions