SAMPLE SLIDES COURSE OUTLINE Core …semiconductortutorials.com/CoreCompetencyDevices_SampleSlides.pdfCORE COMPETENCY CERTIFICATION IN SEMICONDUCTOR TECHNOLOGIES DEVICE TUTORIALS ‐Semiconductors

1 INTRODUCTION

1.1 Overview of Dellin Semiconductor Tutorials

1.2 Overview of Core Competency Devices Course

2 SEMICONDUCTOR MATERIALS2.1 Semiconductor Materials2.2 Silicon2.3 Crystals2.4 Crystaline Silicon3 ELECTRONIC PROPERTIES3.1 Conduction and Valance Bands3.2 Electrons and Holes3.3 Generation and Recombination3.4 Intrinsic Semiconductors3.5 Currents4 DOPING: n AND p TYPE4.1 Doping: n and p Type4.2 Doping: More Details5 JUNCTIONS

5.1 Semiconductor Devices Are Made Up of Interfaces5.2 pn Junction with Zero External Bias5.3 Applying a Voltage to a pn Junction5.4 Other types of Junctions

6 TRANSISTORS6.1 MOS Capacitor6.2 MOS Transistor: Structure6.3 MOS Transistor: Operation6.4 Other Transistors Made in Silicon

6.5 Transistors Made in Other Semiconductors7 CMOS IC AND SCALING7.1 CMOS IC7.2 CMOS IC: Power and Performance

7.3 Scaling for Faster, Better, Cheaper ICs 8 PHOTODIODE AND SOLAR CELL8.1 Review of Optics

8.2 Photon Absorption in Semiconductors8.3 Photodiode

8.4 Solar Cell9 LED AND LASER DIODE

9.1 Spontaneous and Stimulated Emission

9.2 Semiconductor Junctions for Light Emission9.3 Light Emitting Diode (LED)9.4 Laser Diode: How It Works9.5 Edge‐Emitting Laser Diode & VCSEL

Core Competency In Semiconductor Technology:1. DEVICES

Dr. Theodore (Ted) DellinChief Scientist of the Microsystems Center (retired), Sandia National Labs

Reliability Lead (retired), Intl. Technology Roadmap for SemiconductorsQuick Start Micro Training LLC, [email protected], SemiconductorTutorials.com

© 2016, Dellin, All Rights Reserved.

SAMPLE SLIDES & COURSE OUTLINE

A Easy, Effective, Impactful Working Knowledge™ of Microelectronic & Optoelectronic Devices.Recommended for everyone who works with, or depends on, Semiconductor Technologies

Integrated With Our “Digging Deeper” courses in Semiconductor Devices if you need more detail.Integrated With Other Core Competency Courses: 2. Fabrication & 3. Reliability.

14 Hour CourseAvailable Learning Formats: Live, Webinar, Narrated eLearning, Course Notes & PowerPoint Slides.

DellinSemiconductor

Tutorials

Impactful Working Knowledge™Core Competency & Digging DeeperDevices, Fabrication & Reliability

For More Info: SemiconductorTutorials.com or email [email protected]

CORE COMPETENCY CERTIFICATIONIN SEMICONDUCTOR TECHNOLOGIES

DEVICETUTORIALS‐ Semiconductors‐ Junctions‐MOS Transistor‐ IC & Scaling‐ Photodiode & Solar Cell‐ LED and Laser

FABRICATIONTUTORIALS‐Microfabrication Techniques‐Making Devices‐ Packaging‐Micromachining & Microsystems

RELIABILITYTUTORIALS‐ Integrated Circuit and Component Reliability‐ CMOS IC Failure Mechanisms

INTEGRATED “DIGGING DEEPER” COURSESDEVICE‐ Semiconductors‐ Junctions‐ Transistor‐ Optoelectronics

FABRICATION‐ Unit Processes‐ CMOS IC Technology‐Materials

RELIABILITY‐ Failure Mechanisms‐ Rel Engineering‐ Prob. & Statistics

FORMATS

Narrated eLearning

Webinars

PowerPoint Slides

In‐Person Tutorials

UNIQUE FEATURES

Focused on real world needs of tech people

Easy to understand. Picture how things work instead of focusing on equations

Seamless integration of all tutorials

• Chief Scientist of Microsystems Research, Technology & Components Center, Sandia National Lab

• Reliability Lead International Technology Roadmap for Semiconductors

• Reliability Technical Advisory Board, Sematech

• External Review Panel, NASA NEPP

• Tech. & Genl. Chair, IEEE Nonvolatile Memory Technology Symposium

• FLC Award for Technology Transfer

• 6 Tutorials at IEEE Reliability Physics Symp.

• Unique training courses for industry & gov’t.

35 years experience in semiconductor technologies, reliability and training including:

DellinSemiconductor

Tutorials

Impactful Working Knowledge™Core Competency & Digging DeeperDevices, Fabrication & Reliability

For More Info: SemiconductorTutorials.com or email [email protected]

Sample SlidesSemiconductorTutorials.com©2016, Dellin, All Rights Reserved

DellinSemiconductorTutorials

Core Competency Tutorial: Semiconductor Devices

Dr. Ted Dellin

Dellin Semiconductor Tutorials, SemiconductorTutorials.com

Dellin Semiconductor TutorialsCD1: Introduction

Core Competency In-Depth

Devices Fabrication Reliability

CD2. SemiconductorMaterials

CD3. Electronic Properties

CD5. Junctions

CD6. Transistors

CD7. ICs and Scaling

CD8. Photodiode &Solar Cell

CD9. LED & Laser Diode

CD1. Introduction

CD4. Doping: n & p Type

1

1.1 Overview of Dellin Semiconductor Tutorials

1.2 Overview of Device Core Competency Tutorials Overview


Dellin Semiconductor Tutorials StrategyFor Impactful Working Knowledge™

Intuitive Knowledge

Intuitive Knowledge

Intuitive Knowledge

BASIC CORE COMPETENCY

Devices-Fab-ReliabilityALL Technical Folks

IN-DEPTH EXPERTISESelected Folks in Selected Areas

Area 1Quantitative& Intuitive

Area 2Quantitative& Intuitive

TECHWORKFORCE

IMPACTFUL WORKING KNOWLEDGE™

2


+VGS

- - - -S D

IMPACT•Evolutionary & Revolutionary Changes

•Analyze & Solve Problems•Flexibility in job assignments

m

VV

L

WCI thgoxeffsatds 2

)( 2

,

IMPACT•Derivation & Modeling•Prediction & Optimization

Intuitive Knowledge Quantitative Knowledge

Impactful Working Knowledge™

Impactful Working Knowledge™:Intuitive & Quantitative Knowledge

3


Impactful Working Knowledge™

Dellin Semiconductor Tutorials Fills The Critical Need for Intuitive Knowledge

IntuitiveKnowledge

DellinSemiconductor

Tutorials

QuantitativeKnowledge

University Courses

4


Areas Covered In ThisCore Competency Course

CMOS IC

Special Properties of Semiconductors

JunctionsMOS Capacitor

MOSTransistor

Bipolar& Other

Transistors

PhotodetectorSolar Cell

LED &LaserDiode

CMOS Technology

MEMS

Microsystem

Optics

Semiconductor Processing Techniques

ReliabilityEngineering

IC FailureMechanisms

IC Industry

Scaling CMOS

Process Flow

5


Course Goals:Core Competency: Devices

• Impactful Working Knowledge™ needed by all people working with, or dependent on, semiconductor devices

• Intuitive Understanding (“Picturing How Devices Work”)

– Complements University-type courses that focus on Quantitative Understanding

• Present the knowledge in an effective, efficient, easy-to-understand and engaging manner

• (If needed) Solid foundation for our “Digging Deeper” courses in Devices

6




Dr. Ted Dellin


Dellin Semiconductor TutorialsCD2: Semiconductor Materials





CD5. Junctions

CD6. Transistors



CD9f. LED & Laser Diode

CD1. Introduction


7

2.1 Semiconductor Materials

2.2 Silicon

2.3 Crystalline Semiconductors

2.4 Crystalline Silicon


Three Important Characteristicsof Semiconductors

Semiconductor

• Separation between valance & conduction bands

• Larger bandgap = higher operating temperature

• Determines colors of light absorbed & emitted

1. BANDGAP ENERGY

• Only direct semiconductors are efficient light emitters (e.g., LEDs)

2. DIRECT OR INDIRECT BANDGAP

• Distance between atoms in crystal

• Determines which crystals can be grown on top of each other with minimum defects

3. CRYSTAL LATTICE CONSTANT


Why Is Silicon The Dominant Semiconductor For Integrated Circuits?

• Silicon is the only semiconductor

– With a very robust oxide

– On which we can grow a very good oxide/semiconductor interface

• This makes Silicon the best choice for MOS transistors

– MOS transistors are the best choice for almost all ICs

• Also a good choice for high density bipolar ICs

Silicon

Silicon Dioxide

9


Amorphous, Polycrystalline and Crystalline Semiconductors Attributes

AMORPHOUS CRYSTALLINEPOLYCRYSTALLINE

Better Performance

Lower Cost

Larger Area Devices

10


Why Si Wafers with (100) Surfaces?Why Align IC Edges along [110] Directions?

• Transistors formed on (100) surfaces were found to have less trapped charges at the oxide/silicon interface which leads to better transistors.

• The FCC cubic crystal structure naturally fractures along [110] directions. By orienting the ICs edges along [110] directions any cracks formed during the cutting out of the die will tend to go along the saw line, not across the IC Courtesy of Micron

<110> Directions

11


The Diamond Lattice (e.g., Silicon)

• Two intersecting face centered cubic lattices– Both lattices contain the

same silicon atoms (the open and shaded circles in the figure are Si atoms)

• Cube side = 0.54nm

.54 nm Both are the same Si atom

12




Dr. Ted Dellin


Dellin Semiconductor TutorialsCD3: Semi Electronic Properties



3.1 Conduction & Valence Bands

3.2 Electrons & Holes

3.3 Generation and Recombination

3.4 Intrinsic Semiconductors

3.5 Currents



CD5. Junctions

CD6. Transistors




CD1. Introduction


13


In The Semiconductor CrystalWe Only Have To Consider Two Bands

T = 0K (Absolute Zero)

Higher-Energy “Conduction” Band

Band GapNo Allowed Electron States

EL

EC

TR

ON

EN

ER

GY

Lower-Energy “Valence” Band

= Empty electron energy state = Energy state filled with an electron

# states = # valence electrons

14


Generation of an Electron/Hole Pair

• Thermal or light can break the bond that binds the valence electron to the Si atom

Conduction Electron

Si Si Si Si

Si Si Si Si

Si Si Si Si

“Hole”(Missing Valence

Electron)

• If enough energy is supplied a “free” negative electron is created that can move through the crystal (conduction band)

• The site of the missing bonding electron (called a “hole”) has a net positive charge

15


Recombination (Loss of an Electron/Hole Pair) Releases Energy

Heat(Crystal Lattice Vibration –Phonon)

Photon of Light(Semiconductor LEDs and Laser Diodes)

Rate of

Recombination

# of

Electrons

# of

Holes

~ X

16


Intrinsic Carrier Concentration Increases With Decreasing Bandgap

100 200 300 400 50010 20

10 15

10 10

10 5

1

510

1010

1015

GeSi

GaAs

Temperature (K)

Material Band Gap (eV)

Room Temp. Intrinsic Carrier Concen-tration (1010/cm3)

Ge 0.66 200

Si 1.12 1

GaAs 1.42 0.00042

17


Mobilities For Different Semiconductors

Values given are representative

0.1

1

10

100

1000

10000

100000

Organic Semiconductors

GeGaAs

InAs

Amorphous Si

Crystalline SiliconBulk Surface Strained

Surface

Mo

bili

ty (

cm2/V

s)

Electron

Hole

18




Dr. Ted Dellin


Dellin Semiconductor TutorialsCD4: Doping: n and p Type



4.1 Doping to Make n and p Type

4.2 Doping: More Details



CD5. Junctions

CD7. Transistors




CD1. Introduction


19


Intrinsic

“Doping” With Dopant Atoms to Make Electron-rich n Type or Hole-rich p Type

• Add “acceptor” atoms with one lessvalence electron

• Lots of holes (controlled by # of acceptor atoms)

• - B acceptor ions

• Very few electrons

• Pure semiconductor

• Small, equal number of mobile holes and electrons

+

-

+

-

• Add “donor” atoms with extra valence electron

• Lots of electrons (controlled by # of donor atoms)

• + P “donor” ions

• Very few holes

n Type

+

-P+ P+ P+ P+ P+

- - - --

p Type

B- B- B- B- B-

-

+ + + + ++

EC

EV

20


n Type

+

-P+ P+ P+ P+ P+

- - - --

Majority Carrier:

Electrons

Minority Carrier:Holes

p Type

B- B- B- B- B-

-

+ + + + ++

Minority Carrier:

Electrons

Majority Carrier:Holes

Definition of Majority and Minority Carriers

21


Compensation (Counter Doping) Can Turn p Type Into n Type (or vice versa)

B-

B-B-

B-

B-

+

+++

+ P+

P+ P+P+

P+

p Type

B AtomsMake Si

hole-rich p Type

Adding a Higher Concentration of P Atoms Into A Region Turns

It IntoElectron-rich n Type

-

n Type- -

B-

B- B-

B-+

++

+

p Type

B-

22


At Higher Dopant LevelsSemiconductors are Degenerate

P

Conduction Band

P P P P P P

Nondegenerate Degenerate

• Higher doping levels (>1018 /cm3)

• Dopant atoms interact. Energy levels split due to Pauli exclusion principle

• Dopant energy levels form “subband” under conduction band edge

• Makes the bandgap energy appear smaller

Valence Band

EG“Apparent”

EG

23


Controlling the # of Donor Atoms Controls The # of Electrons & Holes in n Type

# electrons= # donor

atoms

# holes depends on # of donor

atoms and temperature

Similarly, we can control the electrons and holes in a p type semiconductor by controlling the number of acceptor atoms

Light (n-)(1015 Dopants/cm3)

1015

electrons/cm3

105

holes/cm3

(Room temp.)

Medium (n)(1017 Dopants/cm3)

1017

electrons/cm3

103

holes/cm3

(Room temp.)

Heavy (n+)(1019 Dopants/cm3)

1019

electrons/cm3

10holes/cm3

(Room temp.)

24




Dr. Ted Dellin


Dellin Semiconductor TutorialsCD5: Junctions



5.1 Semiconductor Devices Are Made of Interfaces

5.2 pn Junction at With Zero Volts Applied

5.3 Applying a Voltage to a pn Junction

5.4. Other junctions



CD5. Junctions

CD6. Transistors




CD1. Introduction


25


Semiconductor Devices InvolveFour Types of Interfaces

• Interfaces have special, useful properties.

• KEY POINT: We can control these properties both:– During manufacture

– By applying an external voltage during operation

• These voltage-modulated special properties are the key to understanding microelectronic and optoelectronic devices

Semi 1

Semi 2

Metal

Semi

Insulator

Semi

Insulator

Metal

26


How The pn Junction Achieves Thermal Equilibrium (0 External Voltage)

n pe- e- h+ h+1. Isolated, electrically neutral n and p

n p++ - -

E3. Diffusion causes a dipole of charge at interface. Dipole creates electric field, E

2. Instant that they are joined a large forward diffusion current flows h+

e-n p

h+e-n p

4A. First, E field repels low energy carriers

reducing diffusion.

n pe-

h+

4B. Second, E field creates reverse drift

current of generated charges

n pe-

h+h+

e-5. Junction reaches equilibrium when E grows large enough to

reduce diffusion to be equal (and opposite) to drift. No net current

27


External Voltage Controls Electric Field Across Junction Controlling Diffusion

E

Reverse Bias Forward Bias

EBuilt-In

Electric Field Across Junction (0 V Applied)

Exponentially LESS(Essentially Zero)Diffusion Current

ExponentiallyMORE

Diffusion Current

E

+E

+Electric Field Across

Junction Due to External Applied Voltage

+

E

=E

=NET Electric Field Across Junction

(Determines Magnitude of Diffusion Current)

=


Voltage

Current

Forward bias(p semi to + voltage)

ZeroBias

Current Through Junction Vs. Externally Applied Voltage (“IV Curve”)

Reverse bias(p semi to - voltage)

“Breakdown” Very Small Reverse“Leakage” Current Due to

Generation & Drift(No Diffusion)

Very Large Forward CurrentAs Applied Voltage Reduces

Diffusion Barrier

0V – No Current(Diffusion & Drift Currents Cancel)

29


Homojunction Vs. Heterojunction

p GaAs

n GaAs

Abrupt Homojunction

p GaAs

n GaAlAs

Abrupt Heterojunction

• Unequal electron and hole barriers

• Notches & gaps

p GaAs

n GaAlAs

GradedHeterojunction

• Unequal electron and hole barriers

• No notches or gaps

• Equal electron and hole barriers

• No notches or gaps

30




Dr. Ted Dellin


Dellin Semiconductor TutorialsCD6: Transistors



6.1 MOS Capacitor

6.2 MOS Transistor: Structure

6.3 MOS Transistor: Operation

6.4 Other Types of Transistors Made in Silicon

6.5 Transistors Made in Other Semiconductors

6.6 Other Transistors



CD5. Junctions

CD6. Transistors




CD1. Introduction


31


The Field Effect: Using a Voltage To Turn The Surface of a p Type Semi into n Type

+

+

+

+

+

+

+

++

+

++

+

+

+

VGATE = 0“Metal”

Gate

Oxide

p Type Semi-

conductor

0 Volts

-

+

+

+

+

--

+

++

+

- - -

+VGATE > VTHRESHOLD

Thin “inversion” layer of electron-rich n type

0 Volts

+ -Hole Electron

0 Gate Voltage Gate Voltage Above Threshold

32


Scanning Electron MicroscopeCross Section of MOS Transistor

SEM: Mike Strizich, Analytical Solutions

Polysilicon Gate

Oxide(too thin to be seen)

Surface of Silicon Wafer

Drain (n type)

Source (n type)

p Well

33


Increasing Drain Voltage Has A Limited Ability To Increase Current

Average Speed of Electrons

Across The Channel

(Determines Current)

VDSAT

DrainVoltage

Current ~ electron velocity ~ (Mobility)(Electric Field)

Increasing VD

increases E Field Along Channel

For VD > VDSAT channel is pinched off. Increasing VD

does NOT increase E Field, or velocity.

Current saturates.

34


Storage or Absence of Electrons on Floating Gate Determines “0” or “1”

• Higher than normal voltages used to add or remove electrons from floating gate

• “0” or “1” determined by higher or lower transistor currents due to presence or absence of electrons on FG

• Nonvolatile Memory: electrons are trapped - will retain high or low threshold without power being applied

n n

Control Gate

Floating Gate

n n

e- e- e- e-

Uncharged Floating GateHigher Current

Charged Floating GateLower Current


High Electron Mobility Transistor(HEMT, Also Called MODFET)

Source Gate Drain

Semi-insulating GaAs

Undoped GaAs

n AlGaAs Quantum Well at Interface That

Traps Electrons

Acts as the Transistor’s

Channel

n++ n++

36

• Quantum energy well formed in top surface of undoped GaAs

• Lots of electrons from n AlGaAs

• Very little scattering in channel

• Advantages: High speed and low noise




Dr. Ted Dellin


Dellin Semiconductor TutorialsCD7: ICs and Scaling



7.1 CMOS IC

7.. CMOS IC Power and Performance

7.3. Scaling for Faster, Better, Cheaper ICs



CD5. Junctions

CD6. Transistors




CD1. Introduction


37


A CMOS IC Needs Four Types of Features (Repeated Many, Many Times)

Electrical insulation (isolation) between transistors

Electrical wiring (interconnection) between transistors and to outside

Two types of transistors: n and p channel

Electrical insulation (isolation) between wires

Top surface of Si wafer

Analytical Solutions, Inc.

38


IC Power Dissipation:Active and Standby

• Power consumed when processing data– In transistors

– In wiring

• Increases with– frequency, f

– square of the supply voltage, VDD

2

• Power consumed when idle

• Increases with– leakage currents, IOFF

– supply voltage, VDD

• Major sources of leakage current– Subthreshold leakage

– Gate insulator tunneling

Active Power Standby Power

0

1

39


Scaling Dimensions & Voltages Results In Faster, Better and Cheaper ICs

~100,000,000’s Transistors/ICSpeed ~ 3,000 MHz1.2 V Power Supply

~0.00005 ¢ / transistor

~1,000,000’s Transistors/ICSpeed ~ 10’s MHz5V Power Supply~0.1 ¢ / transistor

0.7m

0.35

0.25

0.18

0.13

0.5

1.0µm (Late-1980s) 0.1µm (Early-2000s)

40


About Every 2 Years The Industry Has Introduced A New Technology Generation

~70% Shrink Every 2 Years

Year

0.01

0.1

1

10

1980 1990 2000 2010

“Minimum” Feature Size of Leading-Edge Technology

(µm)

2020

2µm

45

22

1.41

0.70.5

0.350.25

0.180.13

90nm65

32

14

41


Scaling: Some Things Get Better and Some Things Get Worse

NewScaled-down

IC Manufacturing

Technology

Gets BETTER:# Transistors/ICCost/Transistor

Transistor Speed

Gets WORSE:Standby Power

ParasiticsStresses

Variability

42




Dr. Ted Dellin


Dellin Semiconductor TutorialsCD8: Photodiode and Solar Cell



8.1 Review of Optics

8.2 Photon Adsorption in Semiconductors

8.3 Photodiode

8.4 Solar Cell



CD5. Junctions

CD6. Transistors




CD1. Introduction


43


Both Aspects of Light, Particle and Wave, Are Important in Optoelectronics

Optoelectronics WaveParticle

Light emitted or absorbed one photon at a time

No emission or absorption for photon energies less

than bandgap energy

Light reflected and/or bent affecting efficiency

Constructive interference key to lasers

44


Light Absorption Only When Photon Energy >= Bandgap Energy

-

- - - - - -- - - - -Photon

of Light

-+

-

Bandgap Energy

• Electron cannot be within the forbidden bandgap

• Valence band electron must receive enough energy from one photon to make it all the way up to conduction band

• For this to happen the photon energy must be equal or greater than the bandgap energy

• Photons with energy less than bandgap are NOT absorbed (semi is transparent)

45


Total Current Equals Dark Current + Photocurrent

I

Dark Current Photocurrent+

I

•Reverse current under both forward and reverse

biases

• Current proportional to amount of light absorbed

I

= Total Current

V

• Light shifts the Dark Current IV curve

downward

46


The Photodiode Can Generate Power Only Over A Limited Region of Forward Biases

Current, I

Voltage, V(Bias)

Only in this quadrant (reverse current under forward bias) can the photodiodes generate

power

Consumes Power

Consumes Power

47


Stacking Smaller Bandgap Semi Behind Larger Bandgap Gives More Power

p n

Smaller Bandgap EG2Smaller VMAX2 (~EG2)Power2 = VMAX2 IMAX2

Larger Bandgap EG1Larger VMAX1 (~EG1)Power1 = VMAX1 IMAX1

p n

HigherEnergy

MediumEnergy

LowerEnergy

SOLAR

PHOTONS

Total Power = Power1 + Power2 > Power from either junction alone

48




Dr. Ted Dellin


Dellin Semiconductor TutorialsCD9: LED & Laser Diode



9.1 Spontaneous & Stimulated Emission

9.2 Semiconductor Junctions for Light Emission

9.3 Light Emitting Diode (LED)

9.4 Laser Diode: How it Works

9.5 Edge-Emitting Laser Diode and VCSEL



CD5. Junctions

CD6. Transistors




CD1. Introduction


49


2. Stimulated Emission

• Requires an incident photon that exactly matches the energy difference between the electron and the hole

• Stimulates emission of a second photon as first photon passes

– Emitted photon has same energy, direction and phase as incident photon

• Result is photon amplification (leads to lasers)

• Rate depends on both electron/hole and photon concentrations

+- - - - - -- - - - -

-

IncidentPhoton Incident

Photon

EmittedPhoton

50


Double Heterojunctions Are Good For Photon Emission

1. Barriers keep electrons and holes in middle layer longer resulting in a larger fraction

recombining to make photons

2. Added benefit: Wide bandgap materials will not absorb lower energy photons from narrow

band gap

Narrow Bandgap pWide Bandgap p Wide Bandgap n+V -V

51


Light Output of an LED Controlled by Current Across Junction

LightPowerOutput

Current Across Junction

Light Power ~ Current

Thermal Roll Off

52


What Is Going On Inside A Semiconductor Laser When It Is Lasing?

• Photons are concentrated into a single beam– Single direction (perpendicular to side reflectors)

– Single energy• Concentration of photon beam is so great that all electrons and

holes injected immediately undergo stimulated emission producing more photons in that single direction and single energy

– Stimulated emission at other energies and/or directions and/or spontaneous emission doesn’t have a chance

• The electron/hole current injected is so large that the photon beam is amplified as it crosses the semiconductor

Semiconductor

53


VCSEL FIB Cross Section

Oxidized MESA edge

OutputFacet

p-contactmetal

Dan Barton, Sandia

Top DBR (Dielectric

Mirror)

Bottom DBR (Dielectric

Mirror)

Optical CavityLight Emission

54

Documents

SAMPLE SLIDES COURSE OUTLINE Core …semiconductortutorials.com/CoreCompetencyDevices_SampleSlides.pdfCORE COMPETENCY CERTIFICATION IN SEMICONDUCTOR TECHNOLOGIES DEVICE TUTORIALS ‐Semiconductors