Review Article Recent Progress in Triboelectric ...downloads.hindawi.com/journals/jnm/2016/5651613.pdf · sustainable development of human civilization. e famil-iar renewable energies

Review ArticleRecent Progress in Triboelectric Nanogenerators as a Renewableand Sustainable Power Source

Zhiming Lin1 Jun Chen2 and Jin Yang1

1Department of Optoelectronic Engineering Chongqing University Chongqing 400044 China2School of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332 USA

Correspondence should be addressed to Jin Yang yangjincqueducn

Received 19 August 2015 Accepted 20 January 2016

Academic Editor David Cornu

Copyright copy 2016 Zhiming Lin et al This is an open access article distributed under the Creative Commons Attribution Licensewhich permits unrestricted use distribution and reproduction in any medium provided the original work is properly cited

The newly developed triboelectric nanogenerators (TENGs) provide an excellent approach to convert mechanical energy intoelectricity which are mainly based on the coupling between triboelectrification and electrostatic induction The TENG has thepotential of harvesting many kinds of mechanical energies such as vibration rotation wind human motion and even waterwave energy which could be a new paradigm for scavenging large scale energy It also demonstrates a possible route towardspractical applications for powering electronic devices This paper presents a comprehensive review of the four modes of TENGsvertical contact-separation mode in-plane sliding mode single-electrode mode and free-standing triboelectric-layer mode Theperformance enhancements of TENGs for harvesting energy as a sustainable power source are also discussed In addition recentreports on the hybridized nanogenerator are introduced which may enable fully self-powered electronic devices Finally thepractical applications of TENGs for energy harvesting are presented

1 Introduction

Energy is one of the key factors which influences the qualityof our life and sustainable development of modern society Indealing with the increased energy consumption from limitedtraditional fossil fuel sources on the earth searching for sus-tainable power sources with reduced carbon emissions andstudying renewable energy technologies are urgent for thesustainable development of human civilization The famil-iar renewable energies such as wind and solar and thermalenergy are targeted to meet the need of megawatt to gigawattpower scales as power sourcesThe requirements for harvest-ing these energies are high power density high efficiency andlow cost

Over the past decades everything that hallmarks thehigh-tech era from handheld cell phones to portable andeven wearable electronic devices depends on electricitywhich has become indispensable in peoplersquos daily life More-over the tremendous sensors for health monitoring per-sonal medical networks military surveillance environmen-talinfrastructuremonitoring and security have been appliedand distributed in every corner of our life And the massive

development of electronic devices is towards miniaturiza-tion light weight and portability They then require powersolutions that are sustainable available maintenance-freeand even perpetual for every unit Generally the electronicdevices use batteries as the external power sources Due tothe limited lifetime the environmental pollution problemthe replacement of batteries and the large number of devicesand vast scope of distribution it is thus desirable to replacethem by harvesting energy from the ambient environmentas sustainable self-sufficient power sources to maintain inde-pendent and continuous operations of these electronics Inthis regard energy harvesting techniques have been devel-oped for supplying energy to electronic devices by convertingambient energy into electrical energyMechanical energy dueto its abundance has been one of themajor energy sources forenergy harvesting systems [1ndash4] To date many mechanismsof energy harvesting techniques have been developed that arebased on various mechanisms including piezoelectric effectelectrostatic effect and electromagnetic induction whichhave been extensively developed for a few decades [5ndash11]

Most recently a new type of energy harvesting technologynamed as triboelectric generator (TENG) has been invented

Hindawi Publishing CorporationJournal of NanomaterialsVolume 2016 Article ID 5651613 24 pageshttpdxdoiorg10115520165651613

2 Journal of Nanomaterials

TENG

+ + + + + + + + +

+ + + + + + + + +

(a) (b)

(c) (d)

+ + + + + + + + +

+ + + + + + + + +

+ + + + + + + + + + + + + + + + + + +

minus minus minus minus minus minus minus minus minus



minus minus minus minus minus minus minus

minus minus minus minus minus

minus minus minus minus

Figure 1The four fundamental modes of the TENG (a)The vertical contact-separationmode (b)The in-plane sliding mode (c)The single-electrode mode (d) The free-standing triboelectric-layer mode

as an alternativemethod for scavenging the ambientmechan-ical energy in the environment to electricity [12ndash16] TheTENG has a novel and unique mechanism which operatesby a conjunction of triboelectrification and electrostaticinduction through the contact-separation or relative slidingbetween two materials that have opposite tribopolarity Afterthe introduction of TENG in 2012 it has attracted increasinginterest for converting mechanical energy into electricity andfor meeting large scale energy demands Fundamentals thatrely on the coupling between the triboelectric effect and elec-trostatic induction have been reported and various devicestructures which can harness all kinds ofmechanical energiessuch as vibration [17ndash20] human motion [21 22] rotation[23 24] wind [25 26] flowing water [27] and walking [28]have been demonstrated A variety of applications using thistechnology for energy harvesting or sensing purposes havebeen represented [29ndash34] According to the existing reviewson TENGs this paper covers the recent progress in TENGsas a renewable and sustainable power source

2 Fundamentals

The triboelectric effect is a well-known phenomenon thatrefers to the charge generation between two different mate-rials with distinct surface electron affinities When they arebrought into contact through friction the different potentialis created by the separation of the twomaterial surfaces Elec-trostatic induction phenomenon is an electricity-generatingprocess such that electrons in one electrode would flow tothe other electrode through the external load in order tobalance the potential difference As for TENGs they realize

the conversion of mechanical energy into usable electricityby the integration of triboelectrification with electrostaticinductions [35 36] Four fundamental modes of the TENGincluding vertical contact-separationmode [37ndash40] in-planesliding mode [41 42] single-electrode mode [43ndash46] andfree-standing triboelectric-layer mode [47ndash52] have beenproposed and demonstrated as shown in Figure 1

21 Vertical Contact-SeparationMode Theworking principleof TENGs for the case of vertical contact-separation modecan be depicted by the coupling between contact chargingand electrostatic induction Zhu et al are the first to reportan accurate and systematic description of the triboelec-trification-driven energy conversion process in January 2012[13] A full cycle of the electricity generation process ofvertical contact-separation mode TENG is illustrated inFigure 2 Polymethyl methacrylate (PMMA) and polyimide(Kapton) are employed as the two contact materials

Under open-circuit conditions there is no charge gen-erated or induced therefore no electric potential difference(EPD) between the two electrodes emerges (Figure 2(a)(I))When two dielectric materials are applied by an externalforce the two materials are brought into contact with eachother Surface charge transfer then occurs on these two con-tacting surfaces due to triboelectric effect (Figure 2(a)(II)) Asdetermined by the triboelectric series electrons are injectedfrom the surface of PMMA into that of Kapton resultingin the accumulation of net positive charges on the PMMAside and net negative charges on the Kapton side Once thereis a relative separation between two materials due to theresilience EPD is then established between the two electrodes

Journal of Nanomaterials 3

+++

+ +

minusminusminus

minus minus

minus minus minus minus minus minus minus minus minus minusminus

+ + + + + + + + + ++


+ + + + + + + + + ++

minus minus minus minus minus minus minus minus minus minusminus+ + + + + + + + + ++


+ + + + + + + + + ++

Origin

Kapton

PMMA

(I) (II) (III)

(VI) (V)

(IV)

d1

d1d3

d2 d2

d1

d2

d1

d2

d1

d3

d2

+120590minus120590

Pressed Releasing

Pressing Released

d998400

d998400

120

80

40

0

Voc

(V)

12 13 14

Time (s)

Pressing

Releasing

(a)

++

+ +

+

minusminus minus

minusminus


+ + + + + + + + + ++minus minus minus minus minus minus minus minus minus minusminus+ + + + + + + + + ++

minus


minus minus minus minus minus minus minus minus minusminus

+ + + + + + + + + ++

++++


++++

minus

minus minus minus minus minus minus


+ + + + + + + + + ++

+ + ++++

Kapton

PMMA

(I) (II) (III)

(VI) (V)

(IV)

d1

d3

d2

d1

d3

d2

d1

d2

d1

d2

d1

d2+120590minus120590

Origin Pressed Releasing

Pressing Released

d998400

d998400

i

i

PressingReleasing

+120590998400

minus120590998400

+120590998400

minus120590998400

+120590m

minus120590m501 504 507 510

Time (s)

2

0

minus2

minus4

I sc

(120583A

)

(b)

Figure 2 Electricity generation process in a full cycle of the TENG for vertical contact-separation mode [13] (a) Open-circuit (b) Short-circuit

(Figure 2(a)(III)) In this case EPD (equivalent to open-circuit voltage) between the two electrodes will be inducedIf we define electric potential of the bottom electrode to bezero it can be expressed as

119881oc = minus120590119889

1205760

(1)

where 120590 is the triboelectric charge density 1205760is the vacuum

permittivity and 119889 is the gap between the two contactmaterials As the Kapton film is being released the open-circuit voltage increases and reaches the maximum valuewhen the Kapton film fully moves backward to the originalstate (Figure 2(a)(V)) If the external force is applied againthe electric potential difference begins to diminish whenthe two materials get closer to each other As a result 119881ocdescends from themaximumvalue to zerowhen a full contactis made again (Figure 2(a)(VI) (II)) This is a full cycle of theelectricity-generating process

Under short-circuit conditions any electric potentialdifference as the Kapton film moves upward drives electronsto flow from the top electrode to the bottom electrode (Fig-ure 2(b)(III)) in order to balance the generated triboelectricpotential resulting in an instantaneous positive current inthe releasing process (Figure 2(b)(IV)) The net effect is thatthe induced charges accumulate with positive sign on thetop electrode and negative sign on the bottom electrode(Figure 2(b)(V)) The induced charge density (1205901015840) when theKapton film is fully released can be expressed as

1205901015840=

1205901198891015840120576119903119896120576119903119901

1198891120576119903119901+ 1198891015840120576119903119896120576119903119901+ 1198892120576119903119896

(2)

where 120576119903119896and 120576119903119901are the relative permittivity of Kapton and

PMMA respectively and 1198891and 119889

2are the thickness of the

Kapton film and the PMMA layer respectively The maxi-mum value of 1205901015840max can be obtained by substituting 119889

3 the


minus minus minus minus minus minus minus minus minus minus minus minus minus minus minus minus minus minus minus minus minus minus minus minus minus minus minus minus minus minus minus minus minus minus

minus minus minus minus minus minus minus minus minus minus minus minus minus minus minus minus minus




+ + + + + + + + + + + + + + + + +minus minus minus minus minus minus minus minus minus minus minus minus minus minus minus minus minus

+ + + + + + + + + + + + + + + + +

+ + + + + + + + + + + + + + + + +

+ + + + + + + + +

+ + + + + + + + +

+ + + + + + + +

+ + + + + + + + + + + + + + + + ++ + + + + + + + +

Top electrodeNylon

PTFEBottom electrode

Sliding inward

I

I

Sliding outward

(I) (II)

(IV) (III)

(a)

Voltage (V)0

0

(b)

Voltage (V)44363

4000

3000

2000

1000

0

minus79011

(c)

Voltage (V)10453 times 105

times105

1

08

06

04

02

0

minus10125

(d)

GlassNylon

PTFEElectrode

(e)

Figure 3 Operating principle of the in-plane sliding mode TENG [42] (a) Schematic illustrations showing the electricity generation withina full cycle of the in-plane sliding mode (bndashd) Simulation result of the potential difference between the two electrodes at different slidingpositions (b) the overlapping position (c) sliding halfway out and (d) fully sliding out (e) Schematic illustrations of the in-plane slidingmode TENG

gap height for 1198891015840 in the equation above Once the generatoris applied by an external force again the distance of the twointerlayerswould reduce leading to the top electrode possess-ing a higher electric potential than the bottom electrode Asa result electrons are driven from the bottom electrode backto the top electrode reducing the amount of induced charges(Figure 2(b)(VI)) This process corresponds to an instanta-neous negative current (Figure 2(b)(IV)) As the two inter-layers are in full contact again induced charges are all neu-tralized (Figure 2(b)(II)) Because of reciprocating motion ofthe materials the generator can produce alternating current

22 In-Plane SlidingMode In 2013Wang et al demonstrateda new type of TENG that is designed based on the in-planesliding between the two surfaces in lateral direction [42]TheTENG consists of a triboelectric PTFE patch a Nylon plateand two electrodes The PTFE patch and the Nylon plate arearranged in parallel to each other where the inner surfacesare in intimate contact (Figure 3(e))

The sliding-induced electricity generation mechanism isschematically depicted in Figure 3(a) At the original positionthe surfaces of Nylon and PTFE are in full contact witheach other Because of the distinct difference in the abilityto attract electrons the contact between the Nylon and


PTFE will result in electrons injected from Nylon to PTFEDuring this period there is no potential difference betweenthe two electrodes (Figure 3(a)(I)) Once the top plate withthe positively charged surface starts to slide outward (Fig-ure 3(a)(II)) relative displacement in contact mode occurs inlateral direction There will be a higher potential on PTFErsquoselectrode than on Nylonrsquos electrode thus the electrons inthe electrode attached to the PTFE film will be driven toNylonrsquos electrode through the external load After that thepotential difference and the amount of transferred chargesreach the maximum values until the two plates reach fullmismatch (Figure 3(a)(III)) When the top Nylon plate isreverted to sliding inward (Figure 3(a)(IV)) the transferredcharges on the electrodes will flow back through the externalload and produce a negative current signal to keep theelectrostatic equilibrium When the two plates completelyreach the original position there will be no transferred char-ges left on the electrode Thus no output current can beobserved Figures 3(b)ndash3(d) show the in-plane charge-sepa-ration-induced electric potential distribution and chargetransfer through numerical simulation using COMSOL Asshown by the simulation results the potential differencekeeps increasing with the increase of the displacement

There are several very important advantages of the in-plane slidingmode comparingwith the vertical contact-sepa-rationmode Energy conversion efficiency is improved owingto the full contact Furthermore the more advanced designfor high-performance TENGs is developed easily based onthe in-plane sliding mode For instance through a multilay-ered disk structure the total amount of transported charges isgreatly enhanced [53] The effective power enhancement canbe achieved

23 Single-Electrode Mode The TENGs presented in theabove sections must have two electrodes to form a closedcircuit for the electrons to flow However such device config-uration largely limits the practical applications of harvestingenergy from an arbitrary freely moving object In this regardthe single-electrode mode TENG was demonstrated to solvethis problem [45] Figure 4(a) shows a schematic diagramof the single-electrode mode TENG A PDMS film which isuniformly covered with an array of micropyramids serves asthe friction surface And the surface of skin is employed as theother contact surface A transparent ITO induction electrodeis coated on the back side of the PET substrate The changeof distance between two surfaces results in charge transferbetween the ITO electrode and the ground thus driving theflow of electrons through an external load

The energy harvesting mechanism of the TENG is sche-matically shown in Figure 4(b) When a human finger isbrought into contact with PDMS the charge transfer betweenthem at the contact interface occurs (Figure 4(b)(I)) SincePDMS is much more triboelectrically negative than humanskin it is generating positive triboelectric charges on thehuman skin and negative ones on the FEP Electrons areinjected fromhuman skin into PDMSThe produced negativetriboelectric charges on the PDMS surface can be preservedfor a long time due to the nature of the insulator As thehuman finger separates from the PDMS surface a potential

difference is generated between the ITO electrode and thegrounded reference electrode The negative charges on thePDMS side will induce positive charges on the ITO electroderesulting in a flow of free electrons via the external load fromthe ITO electrode to ground in order to reach an electrostaticequilibrium state as depicted in Figure 4(b)(II) When thehuman finger is reverted to approaching the PDMS againthe free electrons flow backward from the ground to the ITOelectrode until the skin andPDMSfilmare in full contact witheach other again resulting in producing a negative voltagecurrent signal as shown in Figure 4(b)(IV)This is a full cycleof the single-electrode-based sliding TENGworking process

24 Free-Standing Triboelectric-Layer Mode The free-stand-ing triboelectric-layer mode TENG has the advantages ofversatility and applicability for harvesting energy from anarbitrary moving object or a walking human without anattached electrode And the free-standing triboelectric-layermode features ultrarobustness as well as high energy con-version efficiency [47] The operation of the TENG basedelectricity generation relies on relative position change ofthe tribocharged surface between two electrodes resultingin a periodic change of the induced potential difference asshown in Figure 5(a)The structure of the TENG is composedof a free-standing dielectric layer and two metal films Thetwo metal films play dual roles of the triboelectric materialand two electrodesThe electricity-generating process is elab-orated through a basic unit in Figure 5(b)

In the initial state when the FEP layer is aligned with theleft-hand electrode in direct contact due to their differentabilities in attracting electrons therewill be net negative char-ges on the inner surface of the FEP layer and net positivecharges on the surface of the left-hand electrode (Fig-ure 5(b)(I)) Then when the FEP layer slides towards theright-hand electrode (Figure 5(b)(II)) the EDP between theright-hand electrode and the left-hand electrode will begradually reduced thus resulting in a current flow fromthe left-hand electrode to the right-hand electrode via theexternal load in order to reduce the potential difference(Figure 5(b)(II)) Once the FEP plate completely reaches theoverlapping position of the right-hand electrode no currentflows through the external load (Figure 5(b)(III)) Whenthe FEP plate is reverted to sliding backward an alternatingcurrent is produced in the external load (Figure 5(b)(IV))This is the cycle of electricity generation process Besidesthe other basic design of free-standing triboelectric-layermode TENGs is based on the triboelectrification such asswinging the FEP between the two electrodes even withoutdirect contact (Figure 5(c)) and two different dielectric filmsrsquostructure (Figure 5(d))

3 High-Performance TriboelectricNanogenerators as a SustainablePower Source

The triboelectric nanogenerator offers a completely innova-tive approach for energy harvesting from the vast environ-ment due to its high power density light weight small size


(I) (II)

GroundGround

PDMSPET

ITOCopper

PDMSPET

ITOCopper

(a)

+ + + + + + + + + +

+ + + + + + + + + +

+ + + + + + + + + +

I

I

+ + + + + + + + + +

+ + + + +

+ + + + +

minus minus minus minus minus minus minus minus minus minus




(I) (II)

(IV) (III)


Ground

Active object

Friction surface

Induction electrodeReference electrode

Load

Separate

Contact

(b)

Figure 4 (a) Schematic illustration showing the single-electrode mode TENG [45] (b) Sketches that illustrate the cycle of the electricitygeneration process

and so on However several output performances of theTENG should be improved such as output power currentand energy conversion efficiencyHencemany principles andmechanisms have been demonstrated to realize the enhance-ment of TENGs as a sustainable power source for electronics[14 53ndash62]

31 Enhancing Electric Output for Large Scale Energy Harvest-ing In order to obtain higher power output to meet largeneeds of energy a large scale energy harvester by a nanopar-ticle-enhanced triboelectric nanogenerator has been devel-oped [14] Fabrication of the TENG is relatively simple with

easy processing and low cost The structure of the TENGconsists of two substrates that are connected by four springsto maintain a gap as shown in Figure 6(a) PMMA isemployed as the material for substrates On the bottom sidea layer of contact electrode is preparedThe contact electrodewhich is a gold thin filmwith uniformly sized and distributednanoparticles plays dual roles of electrode and contact surface(Figure 6(b)) The nanoparticles-based modification willfurther increase the effective contact area thus enhancing theelectrical output of TENGs On the top side a thin film ofgold which is employed as another electrode is sandwichedby a layer of polydimethylsiloxane (PDMS) and the substrateThe as-fabricated TENG is presented in Figure 6(c)


FEPAl

Acrylic FEPAl

Acrylic

(a)

+ + + + + + + + + + +

+ + + + + + + + + + + + + + + + + +

+ + + ++ + + + + + +

+ + + +

minus minus minus minus minus minus minus minus minus minus minus

minus minus minus minus minus minus minus minus minus minus minusminus minus minus minus minus minus minus minus minus minus minus


I

I

(I) (II)

(IV) (III)

Dielectric-to-conductor FTENG in contact-sliding mode

FEP

Al(left electrode)

Al(right electrode)d

L

Sliding forward

Sliding backward

(b)

+ + + + + + + + + + +


FEP

Al(left electrode)


L

Dielectric-to-conductor FTENG in non-contact-sliding mode

(c)

+ + + + ++ + + + +

+ + + + +minus minus minus minus minus


FEP

Al(left electrode) d

Dielectric-to-dielectric FTENG

Nylon

(d)

Figure 5 (a) Schematic illustration of a free-standing triboelectric-layer mode TENG [47] (b) Working principle of a free-standing tri-boelectric-layer mode TENG Sketches of (c) a conductor-to-dielectric TENG and (d) a dielectric-to-dielectric TENG

Here to characterize the electrical output short-circuitcurrent (119868sc) and open-circuit voltage (119881oc) of the TENG amechanical shaker is used to apply impulse impact With acontacting force of 10N 119881oc and 119868sc of the output terminalsare displayed in Figures 6(d) and 6(e) respectively It canbe observed that 119881oc is switched between zero and a plateauvalue respectively (Figure 6(d)) and 119868sc exhibits ACbehaviorand it can get up to 160ndash175 120583A (Figure 6(e)) As the forcereaches 500N the output gets the saturated value producingpeak 119868sc of 12mA (Figure 6(f)) This is because the full

contact area of the two materials can be achieved by a largerforce Resistors are used as external loads to further inves-tigate the output power of the TENG When the contactingforce is 500N a power output of 042W can be achieved(Figure 6(g)) To demonstrate that the fabricated TENG canbe used as a power source to light up commercial LEDs 600green LEDs are connected to the TENG As illustrated inFigure 6(h) 600 green LEDs can be simultaneously lit upThese results suggest the possibility of device for a sustainablepower source


500nm

3 cm

(a)

(d) (e)

(f) (g)

(h)

200

150

100

50

0

Voc

(V)

200

150

100

50

0

Voc

(V)

0 1

18 19

2 3 4 5

T (s)

T (s)

200

150

100

50

0

200

150

100

50

0

0 1 2 3 4 5

T (s)

19 20

T (s)

minus50

minus50I sc

(120583A

) I sc

(120583A

)

T (s)

1500

1000

500

0

150

200

250

300

I sc

peak

(120583A

)

I sc

peak

(120583A

)

0

10 20 30 40 50

100 200 300 400 500 600

F (N)

042

040

038

036Inst

anta

neou

s pow

er (W

)

04 06 08 10 12 14 16

R (MΩ)

12000

11429

10857

10286Po

wer

den

sity

(Wm

2)

W = I2peakR

Figure 6 (a) Structural design of the TENG [14] (b) A top-view SEM image of gold nanoparticles covered on gold surface (c) A photographshowing the fabricated device (d) The output open-circuit voltage (119881oc) and (e) the output short-circuit current (119868sc) at contacting force of10N (f) Dependence of the short-circuit current (119868sc) on the contacting force (g) Dependence of the peak power output on the resistance ofthe external load (h) When footstep falls offon the TENG


PMMAPVCCu

AlPET

(a)

Resistor (Ω)108104 105 106 107

Volta

ge (V

)

800

600

400

200

0

Curr

ent (120583

A)

120

90

60

30

0

(b)

Resistor (Ω)108104 105 106 107

Pow

er (m

W)

25

20

15

10

5

0

(c)

J sc

(mA

m2)

6

4

2

0

minus2

minus4J s

c(m

Am

2)

6

4

2

0

minus2

minus4

minus6

Cycle0 200 400 600 800 1000

Initial

1ndash50 cycles 101ndash150 1001ndash1050

middot middot middotmiddot middot middot

cycles cycles

100th cycle 1000th cycle

(d)

Figure 7 (a) Schematic of the device structure [55] (b) The output voltage (blue) and current (red) and (c) the power on the resistance ofthe external load (d) The output stability performance of the TENG

Furthermore a three-dimensional triboelectric nanogen-erator (3D TENG) based on an in-plane sliding mode isalso demonstrated for large scale energy harvesting [55]The 3D TENG with layer-by-layer stacked polyvinyl chloride(PVC) and aluminum as friction materials is schematicallyillustrated in Figure 7(a) The efficient fiction area is largelyincreased owing to the multilayered structure The open-circuit voltage of approximately 800V is observed with anoutput current of 120 120583A from the 3D TENG based in-plane sliding mode as demonstrated in Figure 7(b) and thecurrent reduces with the increasing load resistance whilethe output voltage shows a reversal trend The output powerof the 3D TENG is also plotted as a function of externalresistance as shown in Figure 7(c) The results show that theoutput power is maximized at around 27mW at an externalresistance of about 8MΩ In this case the 3D TENG candrive themicroelectronics or other sensors Notably there areno significant differences in the short-circuit current densitymeasured from the TENGover 1000 cycles (Figure 7(d)) thusthe stability of the 3D TENG is great for applications andthis novel device presents a practically effective approach inproducing electricity at a large scale

32 Enhancing Output Current for Energy Harvesting Thereis a general challenge for the application of the TENG whichis the fact that the output current is usually low Synchroniz-ing the outputs of all multiple units can potentially be util-ized to enhance the instantaneous output current of energyharvesting devices [53 56]

In this regard an innovative design of TENG integratedrhombic gridding was developed as a cost-effective androbust approach to address this issue because of the multipleunit cells connected in parallel [56] The integrated rhombicgridding structure of TENG is schematically shown in Fig-ure 8(a) in which the total number of unit cells is determinedby the following equation

119873total = 21198992 (3)

where 119899 is the number of unit cells along the edge lengthThe PET with a thickness of 600120583m is employed as the sub-strate In each unit cell an aluminum thin film with nano-pores serves not only as a triboelectric surface but also asan electrode PTFE coated copper is employed as anothercontact surface


AluminumPET

PTFECopper

n = 1 n = 2 n = 3

(a)

Enha

ncem

ent f

acto

r120572

20

16

12

8

4

0

n

0 1 2 3

120572 = 2n2

120572 = 1663n2

(b)

n = 1

n = 2

n = 3

Accu

mul

ativ

e cha

rge (120583

C)150

100

50

0

Time (s)00 05 10 15 20 25 30

(c)

Curr

ent (120583

A)

1200

900

600

300

0

Volta

ge (V

)

400

300

200

100

0

Resistance (Ω)108103 104 105 106 107

(d)

n = 1

n = 2

n = 3

Pow

er (W

) Pow

er (W

)

15

10

05

00

0020

0015

0010

0005

0000

Resistance (Ω)108103 104 105 106 107

Resistance (Ω)108103 104 105 106 107

(e)

Figure 8 (a) Schematic diagram of the TENG and when 119899 = 1 2 3 respectively [56] (b) The currentrsquos enhancement factor 120572 increases with119899 (c) Accumulative inductive charges for 119899 = 1 2 3 respectively (d) Dependence of the voltage and current output on the external loadresistance (e) Dependence of the peak power output on the resistance of the external load with 119899 = 1 2 3


AcrylicPTFESpring

CuAl

(a)

I sc

(120583A

)

1200

900

600

300

n

1 2 3 4 5

Voc

(V)

400

300

200

100

0

(b)

I sc

(120583A

)

1200

900

600

300

ΔS (cm2)10 20 30 40 50 60 70

(c)

Resistance (Ω)108103 104 105 106 107

Pow

er d

ensit

y (W

m2)

120

80

40

0

(d)

Figure 9 (a) Schematic diagram of the multilayered stacked TENG [53] (b) Dependence of the voltage and current output on the number ofpinned fingers (c) Dependence of the short-circuit current versus the effective contact area (Δ119878) (d) Dependence of the peak power densityon the external load resistance

As shown in Figure 8(b) 120572 is the current enhancementfactor which is a function of the number of unit cells givenby 120572 = 1198871198992 Due to the nonideal experimental factors such ashumidity fitting coefficient 119887 is a value of 166 The observedresults of enhancement factor are considerably approachingthe ideal value of 21198992 and thus the innovative structure isable to greatly enhance the current output As displayed inFigure 8(c) the accumulative induced charges dramaticallyincrease with increasing 119899 and when 119899 = 3 further revealingthat the novel integrated rhombic gridding structure candramatically improve the electric output In addition theeffective electrical power of TENG is closely related to theexternal load as shown in Figure 8(d) and the currentsdecrease with the increase of load resistance while the outputvoltages show a reversal trend Moreover the peak powerdramatically increases with 119899 and the peak power of 117Wcan be obtained at 119899 = 3 (Figure 8(e))

Moreover to enhance the instantaneous output current ofenergy harvesters a 3D stack integrated TENG is presented

[53] which has a multilayered structure with acrylic as sup-porting substrates as schematically illustrated in Figure 9(a)The number of the units in a 3D TENG is the critical factorthat affects the output current which can be expressed as thefollowing equation

119873 = 4119899 (4)

where 119899 is the total number of pinned fingers of a 3D TENGTo further investigate the effect 119899 on the electric outputthe voltage output and current are measured as depicted inFigure 9(b) The voltage output remains almost constant fordifferent number of pinned fingers 119899 while the current outputincreases linearlywith the number of pinned fingers reachingabout 12mA This experimental result contributes to theoperating synchronicity of all units Likewise the currentoutput increases with the increase of the effective contact areaΔ119878 as displayed in Figure 9(c) And the peak power densityof the 3D TENG can reach up to 1046Wmminus2 with 119899 = 5


Steel rodsFEP thin films

Copper electrodes

(a)

Pow

er d

ensit

y (W

m2)

04

03

02

01

Sliding velocity (ms)01 02 03 04 05

(b)

Effici

ency

()

60

50

40

30

20

10

0

Resistance (MΩ)0 500 1000 1500 2000

(c)

Nor

mal

ized

fric

tion

coeffi

cien

t 12

10

08

06

04

02

00Steel rod

PTFE PTFE PTFE PTFEPTFE PMMA Al foil

(d) (e)

Figure 10 (a) Schematic diagram of the device structure [60] (b) Dependence of the output power density of the TENG on the slidingvelocity (c) Conversion efficiency versus the resistance of the external load (d) Normalized friction coefficient between different kinds ofmaterials (e) Photograph of commercial LEDs lit up simultaneously by the TENG

(Figure 9(d)) As a consequence the output current is greatlyenhanced due to the integrated multilayered structure

33 Enhancing Energy Conversion Efficiency For Energy Har-vesting Many endeavors have been devoted to developmentof delivering high energy conversion efficiency of the TENG[57ndash62] An advanced structural design of the TENG whichgenerates periodically changing triboelectric potential andalternating currents between electrodes was demonstrated[60]

The TENG has a multilayered structure It consists of agroup of rolling steel rods sandwiched by two layers of FEP

thin films and copper which is coated onto the FEP film asback electrodes as illustrated in Figure 10(a) As the top layer-FEP moves from the left end to the right end of the bottomlayer-FEP the steel rods would alsomove from the left part tothe right part of the bottom layer-FEP which will introducetriboelectric charges on both surfaces of the FEP thin filmsand lead to the change of potential difference between eachpair of electrodes on the back of the FEP layer drivingthe electrons to flow in the resistance of the external loadFigure 10(b) shows the maximum output power increaseswith increasing velocities from 01 to 05ms And the energyconversion efficiency can be calculated to be sim55 when theresistance of the external load is matched with the internal


CopperFEP

GoldAcrylic

(a)

Shor

t-circ

uit c

urre

nt (m

A) 06

04

02

00

minus02

minus04

minus06

Time (ms)0 5 10 15 20

(b)

Time (ms)0 5 10 15 20

Ope

n-ci

rcui

t vol

tage

(V)

500

250

0

minus250

minus500

(c)

Mat

ched

load

(MΩ

)

30

25

20

15

10

5

0

Rotation rate (r minminus1)100 200 300 400 500

250

200

150

100

50

0

(d)

(e)

Figure 11 (a) Device structure of the TENG [24] (b) Short-circuit current and (c) open-circuit voltage at a rotation rate of 500 rminminus1 (d)Matched load and average power versus the rotation rate (e) A photo of G16 globe lit up

impedance of the TENG (Figure 10(c)) The high energyconversion efficiency of the TENG can be owing to the lowfrictional coefficient of the rolling motion As for the resultof normalized friction coefficient the frictional coefficient ofthe rolling rod structure is lower than that of the planar struc-tures as shown in Figure 10(d) The TENG can also powerportable electronics like light-emitting diodes (Figure 10(e))

In order to further increase energy conversion effi-ciency many advanced structures have been developed withmultilayered materials Zhu et al demonstrated a planar-structured TENG with two radial-arrayed fine electrodes[24] which is composed of mainly two parts that is a rotatorand a stator as shown in Figure 11(a) The working principleof the TENG is based on the free-standing triboelectric-layermode generating alternating currents between electrodes

When the TENG works at a rotating rate of 500 rminminus1the continuous short-circuit current can reach 05mA witha constant frequency of 500Hz (Figure 11(b)) Figure 11(c)shows themeasured open-circuit voltage of the TENG wherethe peak-to-peak value can reach up to about 870V at thesame frequency To validate the performance of the TENGFigure 11(d) depicts the matched load and output powercurves at higher rotation rates and it is found that thematched load significantly reduces with the increase of therotation rate while the output power is the proportionalrelationship with the rotation rate Furthermore the averageoutput power of 15W can be obtained at a rotation rate of3000 rminminus1 and the efficiency can reach as high as sim24TheTENGcan also be applied to power some electronics suchas lighting up a white globe light as illustrated in Figure 11(e)


Resistance (Ω)102101 103 104 105 106 107

Resistance (Ω)102101 103 104 105 106 107

FloatingS

S

N

N

Coi

l

Coi

l

Repulsive force

Fixe

d

Fixe

d

Slid

ing

Acrylic sheetCu

Plasma etchedKapton film

(a) (b)

(d) (e) (f)

(g)

(c)

Out

put p

ower

(mW

)

Out

put p

ower

(mW

)20

15

10

05

00

8

6

4

2

0O

utpu

t vol

tage

40

35

30

25

20

15

10

05

00

minus05

t3

t3

t2

t2

t1

t1

EMIGTENG

Hybrid cell

EMIGTENGHybrid cell

Total

84 s68 s42 s

42 s35 s29 s

46 s37 s31 s

172 s14 s102 s

Time (s)0 5 10 15 20 25 30

Acrylic sheetCu


S-TENG 1 S-TENG 2

Hybridcell

Powermanagement

circuit

A

B

AND gate

XOR gate

LED

LED

C

S

Figure 12 (a) Schematic diagram of the cross section of the hybrid cell [64] (b) Sketch of the sliding mode TENG structure The inset isan image of as-fabricated device (c) Simulations of distribution of magnetic field in vibration ((d) and (e)) Dependence of the peak poweroutput on the resistance of the EMIG and TENG (f) The capacitors charged by the EMIG TENG and hybrid cell (g) Schematic diagramshowing the hybrid cell to drive a half-adder circuit

4 Hybridization of TriboelectricNanogenerators with Other Types ofEnergy Harvesters

The energy available such as light mechanical thermal andeven chemical energy can also be scavenged as a sustainablepower source Thus there are many other types of powergenerators such as solar cells [63ndash65] electromagnetic gen-erators [66] and electrochemical cells [67] By integratingTENGs with one of the above-mentioned generators moreelectricity can be largely generated increasing the total output

power of the energy device to meet the power needs of someelectronic devices [68ndash71]

41 Hybridized Electromagnetic-Triboelectric NanogeneratorIn order to enhance the overall power output many attemptshave been developed A hybridized mechanical energy har-vesting technology may be utilized to enhance the total out-put performance Hu et al developed a hybrid cell composedof a TENG and an electromagnetic generator (EMG) forscavenging energy [66] Figure 12(a) illustrates a schematic


TENG Solar cell

V

(a) (b)

(c)

(d)

(e) (f) (g)

Volta

ge (V

) 0806040200

Time (s)0 50 100 150 200

Volta

ge (V

) 252015100500

0 2 4 6 8 10

Time (s)0 50 100 150 200

Volta

ge (V

)

3

2

1

0

Solar cell

Hybrid cell PENGDischarging

Charging

VoltageCurrent

Volta

ge (V

)4

3

2

1

0

Time (s)0 1000 2000 3000 4000 5000

Curr

ent (

mA

)

12

6

0

minus6

minus12

Charging

Volta

ge (V

)

36

33

30

27

24

Time (h)

Time (h)

0 2 4 6 8 10

Figure 13 (a) Schematic showing the structure of hybrid energy cell [68] (b) Schematic illustration of the bridge rectification circuit (c)Output voltage of the Si solar cell (d) Rectified output voltage of the TENG (e) Output voltage of the hybrid solar cell and TENG (f) Thehybrid energy cell charging and discharging curves of a Li-ion battery (g) A Li-ion battery of a cell phone charged by the hybrid energy cell

diagram of a hybridized electromagnetic-triboelectric nano-generator which consists of a copper wire and a smallerhollow cube with an opening bottom floating in a larger hol-low cube and a solid cube fixed on the bottom of the largerhollow cube The Kapton films are coated on the inner andouter side wall surfaces of the smaller hollow cube and thecopper foil is attached on the side wall surfaces of the solidcube and the lower part of the inner surfaces of the largerhollow cube Figure 12(b) illustrates the enlarged centerwork-ing part And there are two magnets integrated in the smallerhollow cube and the solid cube respectively

When there is a mechanical disturbance the TENGsoperate in the vertical contact-separation mode and in-planesliding mode Likewise the magnetic flux in the coil will bechanged and an electric output will be generated in the coilbecause of electromagnetic induction Figure 12(c) shows theinduced magnetic field distribution of a copper wire versusthe position of the top magnet by simulation The TENGhas a very high output voltage but low output current withlarge output impedance however the EMG can produce highcurrent but low voltage with small output impedance Thustransformers are applied to the measurement system Figures12(d) and 12(e) illustrate the rectified output power signalsof the TENG and EMG with transformer the output curvesof the EMGs are similar to TENGs but the peak outputpower of EMGs is lower thanTENGs Todemonstrate that the

hybridized nanogenerator has a better output performancethan individual energy harvesting units different generatorsare used to get a 33 V regulated output voltage As shownin Figure 12(f) the shortest charging time is obtained bythe hybridized nanogenerator indicating that the hybridizednanogenerator has a much better charging performancethan that of the individual energy harvesting unit wherethe charging voltage can reach up to 33 V in about 102 sFurthermore the hybrid cell after regulation can also drivea half-adder circuit as demonstrated in Figure 12(g) Hencethe hybridized electromagnetic-triboelectric nanogeneratorhas potential applications for energy harvesting andpromotesthe progress of energy harvesting

42 Hybridized Nanogenerator by Integrating TENG withSolar Cell To scavenge different kinds of energy a hybridenergy cell which is fabricated directly for simultaneouslyscavenging both mechanical and solar energies was demon-strated while the hybridized nanogenerator can play the roleof a sustainable power source for the batteries

Figure 13(a) is the schematic diagram of the device whichis based on the hybridization of the TENG with Si solarcell [72] The Si solar cell is composed of Al electrode p+layer p type Si layer n+ emitter layer SiN film Ag gridsand the transparent ITO electrode The protection layerfor Si microstructure is replaced by a flexible transparent


film of nanowires coated with an ITO electrode Thus thePDMS thin film coated ITO electrode and the conductingSi surface compose the TENG The PDMS layer plays dualrole of the effective triboelectric-layer for the TENG andthe high transparent protection layer for the Si solar cellFigure 13(c) displays that the output voltage of Si solar cellshoots up to 06V where the corresponding output currentreaches 18mA There is a bridge rectification circuit usedto convert the AC into DC signals (Figure 13(b)) and therectified output voltage of 25 V for TENG can be obtained asshown in Figure 13(d) Figure 13(e) shows the output voltagefor each generator both individually and in serial connectionwhen the rectified TENG and the solar cell are connected inseries (Figure 13(b)) The peak output voltage of the hybridnanogenerator can be enhanced owing to the TENG andit can be further improved to 12V Figure 13(f) depicts atypical charging and discharging cycle of Li-ion battery Thevoltage of the battery increased from 154 to 360V in about13 h Under a constant current of 10mA the discharging ofthe battery can last for about 580 s before it is dischargedback to its original voltage of 154V That is the hybridizednanogenerator can be used to charge up Li-ion batteryFigure 13(g) shows that Li-ion battery of a commercial cellphone is charged from 263 to 350V in about 9 h furtherindicating the battery that can be used for some personalelectronics

5 Applications

As a new power generation technology the TENG makes itpossible to utilize the energy scavenged from the vast envi-ronment to directly drive the electronic devices The formedself-powered systems can be applied to various applicationssuch as personal medical networks self-powered active sen-sors healthmonitoring acoustic sensing homeland securityand even remote monitoring [15 73ndash91]

51 3D Energy Harvesting The triboelectric nanogeneratorhas become an attractive concept for energy harvesting how-ever most of the TENGs can only work at a single directionof ambient vibrations which limits their applications in real-world environments To overcome this issue Yang et alhave presented a 3D triboelectric nanogenerator based onthe coupling of the triboelectrification and the electrostaticinduction which can harvest random energy in multipledirections [15]

A schematic diagram of the 3D TENG is shown inFigure 14(a) the designed TENG consists of a cylindroidcore three springs triboelectricmaterials electrodes and theacrylic substrate In the top of the core a copper electrode issandwiched by an iron mass and a layer of PTFE film andthe iron mass is attacked by the three springs An aluminumthin film with nanopore modification is adhered onto theacrylic substrate (Figure 14(b)) which not only serves asan electrode but also serves as the other contact surfaceFigure 14(c) shows the photograph of the TENG The 3DTENG shows that it can work in multiple directions relyingon a hybridizedmode of both vertical contact-separation andin-plane sliding To study the output performance of the 3D

TENG Figure 14(d) demonstrates the measured open-circuitvoltage of the 3D TENG where the voltage reaches 123Vunder out-of-plane excitation Besides a plateau value of142V can be obtained under in-plane excitation as depictedin Figure 14(e) Furthermore there is a bandwidth up to 75Hzfor 3D TENG operating under out-of-plane excitation asillustrated in Figure 14(f) It can be found that the 3D TENGhas a significant output performance and an extremely wideworking bandwidth in different vibration direction To fur-ther investigate the practical application in our surroundingthe 3D TENG is used to scavenge the line vibrational energyAs demonstrated in Figures 14(g) and 14(h) respectivelyit can be seen that 40 commercial LED bulbs are lit upsimultaneously (Figure 14(g)) To systematically study theelectric output Figure 14(h) shows the voltage values underdifferent line swing amplitudes We can see that the outputvoltage increases dramatically with the increase of the swingamplitudes In addition to get a visualization of the 3DTENGpowering electronics the 3D TENG can be also mountedon a bicycle wheel to scavenge the rotation energy and 30commercial LEDs are connected in series and lit up simulta-neously as shown in Figure 14(i) Likewise the 3D TENG canbe further applied to powering personal medical networksinfrastructure monitoring and more

52 Energy Harvesting from Human Motion As we all knowportable electronic devices are usually powered by tradi-tional power supplies such as batteries which significantlylimits the usage of personal electronics Meanwhile usingthe TENG which converts the biomechanical energy fromhumanmotions into electricity is a possible approach to driveportable electronic devices [73ndash78] Thus Bai et al demon-strated a flexible multilayered triboelectric nanogenerator forharvesting biomechanical energy from human motions [79]

The basic structure of the integrated multilayered TENGis schematically illustrated in Figure 15(a) The Kapton filmis employed as the framework of the TENG units which isshaped into a zigzag structure throughmaking deformationsIn each unit an aluminum foil and PTFE thin film coated alu-minum are adhered onto both sides of the Kapton film as thetwo contact surfaces respectively The integrated multi-layered TENG has significantly larger output power andFigure 15(b) shows the short-circuit current and the open-circuit voltage under different large contact force It can beseen that both the short-circuit current and the open-circuitvoltage increase with the enhancement of the large contactforce owing to the increased contact area Meanwhile tocharacterize the robustness of the multilayered TENG theTENG ismeasuring the electric output for every ten thousandimpacts As depicted in Figure 15(c) there is only slightdecrease for the short-circuit current and the open-circuitvoltage about sim7 and sim9 respectively To study the abilityof the TENG to drive electronic devices a self-lightingshoe is presented The TENG is assembled onto the shoepad as shown in Figure 15(d) Once triggered by normalwalking a total of 9 commercial LED bulbs are lit up simul-taneously (Figure 15(e)) which demonstrates the ability of themultilayered TENG to harvest biomechanical energy fromhuman motions to power personal electrics


IronAcrylicCopper

PTFEAluminum

z

xy

(a)

(d) (e) (f)

(g) (h) (i)

(b)

(c)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V) 150

100

50

0

150

100

50

0

Time (s)

Time (s) Time (s)

1 11 12 13 14

Time (s)

108 11

I II III VI

I II IIIVI

minus50

minus50102 104

1 11 12 13 14

150

120

90

60

30

0

Frequency (Hz)10 36 62 88 114 140

Shor

t-circ

uit c

urre

nt (120583

A)30

24

18

12

6

0

75Hz

26Hz 101Hz

Volta

ge (V

)

100

50

0

minus50

minus100

Time (s)0 10 20 30 40 50

1 cm 2 cm 3 cm 4 cm

Figure 14 (a) Schematic diagram of a 3D triboelectric nanogenerator [15] (b) SEM image of the aluminum film fabricated with nano-structures nanopores (c) A photograph of an as-fabricated 3D TENG Dependence of the open-circuit voltage (d) under out-of-planeexcitation and (e) at in-plane excitation angle of 180∘ (f) Output voltages versus frequency under out-of-plane condition (g) Photographof energy harvesting from the line vibration (h) Output voltage under different line swing amplitudes condition (i) Photograph of energyharvesting from the rotation of a bicycle wheel

As demonstrated in Section 32 the TENG can be alsoused to harvest energy from human motions [56] whichcomprises a supporting shelf a TENG four springs andtwo long screw shanks as illustrated in Figure 15(f) Whena person walks the TENG will produce electric output andthe photograph of a fabricated device is demonstrated inFigure 15(g) Moreover the energy harvested from humanwalking can light up 30 serial-connected commercial LEDs

simultaneously as shown in Figure 15(h) Therefore theTENG is proved to be suitable for biomechanical energyharvesting In addition Yang et al also developed a 3DTENGwhich can harvest energy from human motions [15]

53 Acoustic Energy Harvesting The acoustic energy thatalways exists in our daily life and environments has beenoverlooked as a power source such as speech music or even


KaptonPTFE

Aluminum

(a)

(b) (c)

(d) (e)

(f)

(g) (h)

Max

imum

Voc

(V)

Max

imum

Voc

(V)

250

200

150

100

50

Impact force (N)100 200 300 400 500

Max

imum

I sc

(120583A

)

Max

imum

I sc

(120583A

)

700

600

500

400

300

200

100

300

200

100

Impact times (times104)0

0

600

400

200

02 4 6 8 10

Figure 15 (a) Schematic diagram of an integrated multilayered TENG [71] (b) Dependence of the short-circuit current and the open-circuitvoltage versus the contact force (c) Durability of the integrated multilayered TENG (d) Photograph of an as-fabricated self-lighting shoe(e) Photograph of the self-lighting shoe under normal walking (f) Schematic diagram of a self-powered backpack [56] (g) Photograph of anas-fabricated self-powered backpack (h) Photograph of the backpack under normal walking

noise How to turn acoustic energy from speech music ornoise into electrical power has been an attractive researchThus a triboelectrification-based thin film nanogenerator forharvesting acoustic energy from ambient environment isdemonstrated to provide a practical method [80]

Figure 16(a) shows a schematic diagramof the nanogener-ator which is based on a Helmholtz cavity with a size-tunablenarrowneckThe core of the nanogenerator (a cross-sectionalview) is illustrated in Figure 16(b) in which aluminumfilm with nanopores serves as one contact surface and anelectrode To investigate the output performance the outputvoltage and current of the TENG are measured upon con-necting to an external load resistor As the results displayedin Figure 16(c) the voltage amplitudes through the load willgenerally increase while the current follows a reverse trendbecause of the Ohmic loss In addition the instantaneouspower density generated from the TENG can reach a maxi-mum value of 602mWm2 at a resistance of 6MΩ and it cansimultaneously drive 17 commercial LEDbulbs as depicted inFigure 16(d) Moreover the output voltage can also serve assound signal transmitted Parts (e1) and (e2) of Figure 16(e)

are the reconstructed signal of sound and the correspondingshort-time Fourier transform respectively Thus the TENGcan be developed as a self-powered microphone for soundrecording as shown in Figure 16(f) Therefore the resultssuggest that acoustic energy can be one of the promisingenergy sources with highly efficient generators

Besides Fan et al demonstrated a novel design of a rol-lable paper-based TENG for harvesting acoustic energy [81]Figure 16(g) shows the ultrathin TENG with a multilayeredstructure consisting of a layer of multiholed paper coatedwith copper serving as an electrode layer and a thin PTFEmembrane The inset of Figure 16(h) is the photograph ofthe real device The TENG has a large electric output andvarious applications it can be seen that maximum outputpower density of 121mWm2 with the corresponding volumepower density of 968Wm3 is obtained at 800KΩ as demon-strated in Figure 16(h) Furthermore it has the capabilityof harvesting acoustic energy from portable electronics Asshown in Figure 16(i) using the acoustic energy from a cellphone the capacitor is charged from 0V to 18 V within 17 sIt is anticipated that the TENGharvesting acoustic energy can


PTFECu

Paper

Pow

er (W

m2)

012

008

004

000

Resistance (Ω)102 103 104 105 106 107 108

Resistance (Ω)100 102 104 106 108

Resistance (Ω)100 102 104 106 108

Volta

ge (V

)16

12

08

04

Time (s)

(a) (b) (c)

(d) (e) (f)

(g) (h) (i)

5 10 15

Pow

er d

ensit

y (W

m2)

0075

0060

0045

0030

0015

0000

Volta

ge (V

) 02

001

minus01minus02

Time (s)0 05 1 15 2 25 3 35

Time (s)0

005 1 15 2 25 3 35

4000

2000

Freq

uenc

y(H

z)

AcrylicPETPTFE

CopperAluminum

Pin

PcavityAcoustic

200nm 5120583m

Volta

ge (V

)

60

45

30

15

0

holes

Curr

ent (120583

A)

16

12

8

4

0

(e1)

(e2)

Figure 16 (a) Device structure of the organic film TENG [72] (b) Cross-sectional view of the TENG (c) Dependence of the short-circuitcurrent and the open-circuit voltage and (d) the peak power output on the external load resistance (e) The signal of sound waveform andshort-time Fourier transform (f) Photograph of a self-powered microphone for sound recording (g) Schematic diagram of an as-fabricatedultrathin paper-based TENG [73] (h) Dependence of the peak power output on the external load resistance (i) A 2120583F capacitor charged bythe THEG from the cell phone

be applied to the applications of theatric stage live recordingjet engine noise reduction military surveillance and more

54 Water Wave Energy Harvesting Water wave energy isvery abundant and common for us which has the features ofhigh volume large scale being widely distributed and moreThus many efforts have been devoted to converting varioustypes of water energy into electricity [85 86] and there arealso several challenges for commercialization up to now Huet al reported a TENG with 3D spiral structure which has

the capability of efficiently scavenging water wave energy inour surrounding

Figure 17(a) illustrates the structure of the TENG with avertical contact-separation mode [87] The basic structure ofthe TENG is composed of a 3D spiral structure with seismicmass at the bottom and a Kapton film serves as lower contactsurface An aluminum film coated on the seismic mass servesas the upper surfaceThe inset of Figure 17(a) is a photographof the real device When the spiral oscillates in response tothe water agitation electricity will be generated The output


Acrylic sheet

Cu film

Mass loading

Al coated AAOPlasma etchedKapton film

(a)

Out

put v

olta

ge (V

)

120

100

80

60

40

20

0

120 140 160100806040200

minus20

minus40

Time (s)

(b)

Out

put c

urre

nt (120583

A)

15

10

5

0

minus5

minus10

Time (s)0 50 100 150 200

(c)

CuAlPET

PTFEAcrylic

(d) (e) (f)

Curr

ent (120583

A)

320

240

160

80

0

Time (s)0 10 20 30 40 50

n = 1

n = 2

n = 3

n = 4

(g)

Accu

mul

ativ

e cha

rge (120583

C) 25

20

15

10

5

0

Time (s)0 2 4 6 8

n = 4

n = 3

n = 2

n = 1

(h)

Max

imum

pea

k po

wer

(mW

)

70

60

50

40

30

20

10

0

Number of integrated units1 2 3 4

(i)

Figure 17 (a) Structural design of the TENG and a photo of the fabricated device [76] (b) The open-circuit voltage and (c) the short-circuitcurrent of the TENG (d) Schematic of the fabricatedminimum unit [77] (e) Photo of a fabricated TENG (f) Schematic for the configurationfor harvesting water wave energy (g) Rectified short-circuit current of the TENGs for different unit number (h) Accumulative inducedcharges for different unit number (i) Dependence of the peak power output on the resistance of the different unit numbers

voltage and current of the TENG are depicted in Figures 17(b)and 17(c) respectively From the results it can be found thatthe device produces an output voltage peak of up to 110Vand the output current of up to 15 120583A which can light upsome commercial LEDbulbs as the buoy swayswith thewaterwaves This approach might provide the possibility for thesustainable energy harvesting from water waves

Another basic prototype of water-TENG is demonstratedfor harvesting large scale water wave energy [91] as schemat-ically illustrated in Figure 17(d) The basic unit of the TENGis composed of arch-shaped top and bottom plates andmulti-layer contact materials in it Four basic units and a ball whichplays the role of external vibration by gravity in the center ofthe device form a TENG as shown in Figure 17(e) When the

TENG is driven by the water wave the collisionwith the wallswill drive the TENG generating electricity The power outputcapability of the TENG is investigated with unit number 119899 =1 2 3 4 respectively As demonstrated in Figure 17(g) theoutput currents increase with the increase of unit numbersBesides similar trend also can be seen in Figure 17(h) theaccumulative induced charges increase with elevated unitnumbers Moreover a larger peak power output can beobtained owing to the increase of the unit numbers whichis plotted according to the integrated unit number in Fig-ure 17(i) Thus the packaged TENG for collecting water waveenergy is successfully demonstrated Most importantly largescale applications of TENGs as a sustainable power source canbe adequately applied to harvest wave energy (Figure 17(f))


6 Conclusions

The discovery of the TENG takes a big step forward in thefield of converting mechanical energy into electricity formeeting our energy demands It is an exciting technologybecause of its high output intensity high efficiency lightweight low cost easy fabrication and small size The TENGcan effectively use mechanical energies in almost any formand any scale and provide a continuous direct current sourceto charging various commercial electronics under the fourfundamental modes Moreover the TENG can be hybridizedwith other technologies such as the solar cell to simulta-neously harvest multiple-type energies And the hybridizednanogenerator is enabled to take advantages of both oftheir unique performances Many practical applications havedeveloped with great performance

As to the future applications of TENGs there are alsoseveral main issues on TENGs as a sustainable power sourcewhich we should pay more attention to First the fundamen-tal mechanism of contact electrification remains to be inves-tigated extensively This phenomenon has been researchedfor a long time which refers to the charge generation onthe surface of the materials when they are brought intocontact with different materials several theories about thecontact electrification have been proposed however thereis no substantial conclusion achieved Thus the deepenedunderstanding of contact electrification is vitally importantto achieve a higher output of the TENG Second the outputvoltage of the TENG is very high while its output current islow which means that the TENG requires much higher opti-mum resistance than other harvesters Voltage transformersmay be an approach to reduce voltage and boost the currentIn addition the packaging of the TENG can be designedwith many small size units to increase the output current andlower the output voltage without reducing the power Thirdthe durability and output stability of the device should beimproved The performance of the surface of the materialsmay be changed for millions of cycles especially in contact-slidingmode whichwill affect the performance of the TENGThrough selecting new materials and designing advancedstructure the durability and output stability of the TENG canbe enhanced Fourth a high efficiency power managementcircuit is required in order to provide power for electronicsThe energy scavenging from the environment is unstableunpredictable and sometime intermittent but the electronicsneed a regulated power source to work normally So it isnecessary to develop a high efficiency power managementcircuit to store the energy in a battery or capacitor and thenprovide power for the electronics forming a self-poweredsystem

The TENG has been a new paradigm in energy harvest-ing technologies for truly achieving sustainable and main-tenance-free self-powered systems It can be anticipated thatthrough the worldwide efforts on TENGs as a sustainablepower source they will soon be made commercialized pro-ducts for the applications in Internet of things mobile elec-tronics self-powered e-skins fabric electronics medicalhealth monitoring and environmental protection

Competing Interests

The authors declare no competing financial interests

Acknowledgments

This work was supported by the National Natural ScienceFoundation of China (nos 61174017 and 51475060)and Chongqing Science and Technology Commission(cstc2013kjrc-qnrc40006)

References

[1] S P Beeby M J Tudor and N M White ldquoEnergy harvestingvibration sources for microsystems applicationsrdquoMeasurementScience and Technology vol 17 no 12 article no R01 pp R175ndashR195 2006

[2] J W Matiko N J Grabham S P Beeby and M J TudorldquoReview of the application of energy harvesting in buildingsrdquoMeasurement Science and Technology vol 25 no 1 Article ID012002 2014

[3] E Arroyo and A Badel ldquoElectromagnetic vibration energy har-vesting device optimization by synchronous energy extractionrdquoSensors and Actuators A Physical vol 171 no 2 pp 266ndash2732011

[4] J Chen D Chen T Yuan and X Chen ldquoA multi-frequencysandwich type electromagnetic vibration energy harvesterrdquoApplied Physics Letters vol 100 no 21 Article ID 213509 2012

[5] J Yang YWen P Li X Bai andM Li ldquoImproved piezoelectricmultifrequency energy harvesting by magnetic couplingrdquo inProceedings of the 10th IEEE SENSORS Conference 2011 (SEN-SORS rsquo11) pp 28ndash31 IEEE Limerick Irland October 2011

[6] J Yang Y Wen P Li X Yue and Q Yu ldquoEnergy harvestingfrom ambient vibrations with arbitrary in-plane motion direc-tions using a magnetostrictivepiezoelectric laminate compos-ite transducerrdquo Journal of Electronic Materials vol 43 no 7 pp2559ndash2565 2014

[7] Q Yu J Yang X Yue et al ldquo3D wideband vibro-impacting-based piezoelectric energy harvesterrdquo AIP Advances vol 5 no4 Article ID 047144 2015

[8] P D Mitcheson P Miao B H Stark E M Yeatman A SHolmes and T C Green ldquoMEMS electrostatic micropowergenerator for low frequency operationrdquo Sensors and ActuatorsA Physical vol 115 no 2-3 pp 523ndash529 2004

[9] L G W Tvedt D S Nguyen and E Halvorsen ldquoNonlinearbehavior of an electrostatic energy harvester under wide-andnarrowband excitationrdquo Journal of Microelectromechanical Sys-tems vol 19 no 2 Article ID 5404427 pp 305ndash316 2010

[10] J Yang Y Wen P Li X Yue Q Yu and X Bai ldquoA two-dimensional broadband vibration energy harvester using mag-netoelectric transducerrdquoApplied Physics Letters vol 103 no 24Article ID 243903 2013

[11] J Yang Q Yu J Zhao et al ldquoDesign and optimization of abi-axial vibration-driven electromagnetic generatorrdquo Journal ofApplied Physics vol 116 no 11 Article ID 114506 2014

[12] K Y Lee J Chun J-H Lee et al ldquoHydrophobic sponge struc-ture-based triboelectric nanogeneratorrdquo Advanced Materialsvol 26 no 29 pp 5037ndash5042 2014

[13] G Zhu C Pan W Guo et al ldquoTriboelectric-generator-drivenpulse electrodeposition for micropatterningrdquo Nano Letters vol12 no 9 pp 4960ndash4965 2012


[14] G Zhu Z-H Lin Q Jing et al ldquoToward large-scale energyharvesting by a nanoparticle-enhanced triboelectric nanogen-eratorrdquo Nano Letters vol 13 no 2 pp 847ndash853 2013

[15] J Yang J Chen Y Yang et al ldquoBroadband vibrational energyharvesting based on a triboelectric nanogeneratorrdquo AdvancedEnergy Materials vol 4 no 6 Article ID 1301322 2014

[16] S Kim M K Gupta K Y Lee et al ldquoTransparent flexible gra-phene triboelectric nanogeneratorsrdquo Advanced Materials vol26 no 23 pp 3918ndash3925 2014

[17] W Yang J Chen G Zhu et al ldquoHarvesting vibration energyby a triple-cantilever based triboelectric nanogeneratorrdquo NanoResearch vol 6 no 12 pp 880ndash886 2013

[18] H Zhang Y Yang Y Su et al ldquoTriboelectric nanogenerator forharvesting vibration energy in full space and as self-poweredacceleration sensorrdquoAdvanced Functional Materials vol 24 no10 pp 1401ndash1407 2014

[19] B K Yun J W Kim H S Kim et al ldquoBase-treated poly-dimethylsiloxane surfaces as enhanced triboelectric nanogen-eratorsrdquo Nano Energy vol 15 pp 523ndash529 2015

[20] Y Su J Chen Z Wu and Y Jiang ldquoLow temperature depen-dence of triboelectric effect for energy harvesting and self-powered active sensingrdquo Applied Physics Letters vol 106 no 1Article ID 013114 2015

[21] Y Yang H Zhang Z-H Lin et al ldquoHuman skin based tri-boelectric nanogenerators for harvesting biomechanical energyand as self-powered active tactile sensor systemrdquoACSNano vol7 no 10 pp 9213ndash9222 2013

[22] W Seung M K Gupta K Y Lee et al ldquoNanopatterned textile-based wearable triboelectric nanogeneratorrdquo ACS Nano vol 9no 4 pp 3501ndash3509 2015

[23] P Bai G Zhu Y Liu et al ldquoCylindrical rotating triboelectricnanogeneratorrdquo ACS Nano vol 7 no 7 pp 6361ndash6366 2013

[24] G Zhu J Chen T Zhang Q Jing and Z L Wang ldquoRadial-arrayed rotary electrification for high performance triboelectricgeneratorrdquo Nature Communications vol 5 article 3426 2014

[25] Y Yang G Zhu H Zhang et al ldquoTriboelectric nanogeneratorfor harvesting wind energy and as self-powered wind vectorsensor systemrdquo ACS Nano vol 7 no 10 pp 9461ndash9468 2013

[26] Z Wen J Chen M Yeh et al ldquoBlow-driven triboelectric nano-generator as an active alcohol breath analyzerrdquo Nano Energyvol 16 pp 38ndash46 2015

[27] Z-H Lin G Cheng W Wu K C Pradel and Z L WangldquoDual-mode triboelectric nanogenerator for harvesting waterenergy and as a self-powered ethanol nanosensorrdquo ACS Nanovol 8 no 6 pp 6440ndash6448 2014

[28] S Jung J Lee T Hyeon M Lee and D-H Kim ldquoFabric-based integrated energy devices for wearable activity monitorsrdquoAdvanced Materials vol 26 no 36 pp 6329ndash6334 2014

[29] H Zhang Y Yang Y Su et al ldquoTriboelectric nanogenerator asself-powered active sensors for detecting liquidgaseous waterethanolrdquo Nano Energy vol 2 no 5 pp 693ndash701 2013

[30] Y Su G Zhu W Yang et al ldquoTriboelectric sensor for self-powered tracking of object motion inside tubingrdquo ACS Nanovol 8 no 4 pp 3843ndash3850 2014

[31] G Zhu W Q Yang T Zhang et al ldquoSelf-powered ultrasen-sitive flexible tactile sensors based on contact electrificationrdquoNano Letters vol 14 no 6 pp 3208ndash3213 2014

[32] F Yi L Lin S Niu et al ldquoStretchable-rubber-based triboelectricnanogenerator and its application as self-powered body motionsensorsrdquo Advanced Functional Materials vol 25 no 24 pp3688ndash3696 2015

[33] Y Wu Q Jing J Chen et al ldquoA self-powered angle measure-ment sensor based on triboelectric nanogeneratorrdquo AdvancedFunctional Materials vol 25 no 14 pp 2166ndash2174 2015

[34] P Bai G Zhu Q Jing et al ldquoTransparent and flexible barcodebased on sliding electrification for self-powered identificationsystemsrdquo Nano Energy vol 12 pp 278ndash286 2015

[35] Z L Wang J Chen and L Lin ldquoProgress in triboelectric nano-generators as a new energy technology and self-powered sen-sorsrdquo Energy amp Environmental Science vol 8 no 8 pp 2250ndash2282 2015

[36] G Zhu B Peng J Chen Q Jing and Z LWang ldquoTriboelectricnanogenerators as a new energy technology from fundamen-tals devices to applicationsrdquo Nano Energy vol 14 pp 126ndash1382015

[37] S Park H Kim M Vosgueritchian et al ldquoStretchable energy-harvesting tactile electronic skin capable of differentiatingmultiple mechanical stimuli modesrdquo Advanced Materials vol26 no 43 pp 7324ndash7332 2014

[38] F-R Fan L Lin G Zhu W Wu R Zhang and Z L WangldquoTransparent triboelectric nanogenerators and self-poweredpressure sensors based on micropatterned plastic filmsrdquo NanoLetters vol 12 no 6 pp 3109ndash3114 2012

[39] J Yang J Chen Y Su et al ldquoEardrum-inspired active sensorsfor self-powered cardiovascular system characterization andthroat-attached anti-interference voice recognitionrdquo AdvancedMaterials vol 27 no 8 pp 1316ndash1326 2015

[40] S Lee W Ko Y Oh et al ldquoTriboelectric energy harvesterbased on wearable textile platforms employing various surfacemorphologiesrdquo Nano Energy vol 12 pp 410ndash418 2015

[41] G Zhu J Chen Y Liu et al ldquoLinear-grating triboelectric gen-erator based on sliding electrificationrdquo Nano Letters vol 13 no5 pp 2282ndash2289 2013

[42] S Wang L Lin Y Xie Q Jing S Niu and Z L Wang ldquoSlid-ing-triboelectric nanogenerators based on in-plane charge-separation mechanismrdquo Nano Letters vol 13 no 5 pp 2226ndash2233 2013

[43] S Niu Y Liu S Wang et al ldquoTheoretical investigation andstructural optimization of single-electrode triboelectric nano-generatorsrdquo Advanced Functional Materials vol 24 no 22 pp3332ndash3340 2014

[44] Y Li G Cheng Z-H Lin J Yang L Lin and Z L WangldquoSingle-electrode-based rotationary triboelectric nanogenera-tor and its applications as self-powered contact area and eccen-tric angle sensorsrdquo Nano Energy vol 11 pp 323ndash332 2015

[45] B Meng W Tang Z-H Too et al ldquoA transparent single-friction-surface triboelectric generator and self-powered touchsensorrdquo Energy and Environmental Science vol 6 no 11 pp3235ndash3240 2013

[46] Y Yang H Zhang J Chen et al ldquoSingle-electrode-based slid-ing triboelectric nanogenerator for self-powered displacementvector sensor systemrdquo ACS Nano vol 7 no 8 pp 7342ndash73512013

[47] S Wang Y Xie S Niu L Lin and Z L Wang ldquoFreestandingtriboelectric-layer-based nanogenerators for harvesting energyfrom a moving object or human motion in contact and non-contact modesrdquo Advanced Materials vol 26 no 18 pp 2818ndash2824 2014

[48] H Guo J Chen M H Yeh et al ldquoAn ultra-robust high-per-formance triboelectric nanogenerator based on charge replen-ishmentrdquo ACS Nano vol 9 no 5 pp 5577ndash5584 2015


[49] L Lin S Wang S Niu C Liu Y Xie and Z L Wang ldquoNon-contact free-rotating disk triboelectric nanogenerator as a sus-tainable energy harvester and self-powered mechanical sensorrdquoACS Applied Materials and Interfaces vol 6 no 4 pp 3031ndash3038 2014

[50] HGuoQ Leng XHe et al ldquoA triboelectric generator based onchecker-like interdigital electrodes with a sandwiched PET thinfilm for harvesting sliding energy in all directionsrdquo AdvancedEnergyMaterials vol 5 no 1 Article ID 1400790 pp 3031ndash30382015

[51] Z Lin G Cheng X Li P Yang X Wen and Z Lin WangldquoA multi-layered interdigitative-electrodes-based triboelectricnanogenerator for harvesting hydropowerrdquo Nano Energy vol15 pp 256ndash265 2015

[52] T Jiang X Chen C B HanW Tang and Z LWang ldquoTheoret-ical study of rotary freestanding triboelectric nanogeneratorsrdquoAdvanced Functional Materials vol 25 no 19 pp 2928ndash29382015

[53] W Yang J Chen Q Jing et al ldquo3D stack integrated triboelec-tric nanogenerator for harvesting vibration energyrdquo AdvancedFunctional Materials vol 24 no 26 pp 4090ndash4096 2014

[54] J Chen G Zhu W Yang et al ldquoHarmonic-resonator-based tri-boelectric nanogenerator as a sustainable power source and aself-powered active vibration sensorrdquo Advanced Materials vol25 no 42 pp 6094ndash6099 2013

[55] W Du X Han L Lin et al ldquoA three dimensional multi-layered sliding triboelectric nanogeneratorrdquo Advanced EnergyMaterials vol 4 no 11 Article ID 1301592 2014

[56] W Yang J Chen G Zhu et al ldquoHarvesting energy from thenatural vibration of human walkingrdquo ACS Nano vol 7 no 12pp 11317ndash11324 2013

[57] Y Xie S Wang S Niu et al ldquoGrating-structured freestandingtriboelectric-layer nanogenerator for harvesting mechanicalenergy at 85 total conversion efficiencyrdquo Advanced Materialsvol 26 no 38 pp 6599ndash6607 2014

[58] W Tang T Jiang F R Fan et al ldquoLiquid-metal electrode forhigh-performance triboelectric nanogenerator at an instanta-neous energy conversion efficiency of 706rdquo Advanced Func-tional Materials vol 25 no 24 pp 3718ndash3725 2015

[59] G Zhu Y S Zhou P Bai et al ldquoA shape-adaptive thin-film-based approach for 50 high-efficiency energy generationthrough micro-grating sliding electrificationrdquo Advanced Mate-rials vol 26 no 23 pp 3788ndash3796 2014

[60] L Lin Y Xie S Niu S Wang P-K Yang and Z L WangldquoRobust triboelectric nanogenerator based on rolling electrifi-cation and electrostatic induction at an instantaneous energyconversion efficiency of sim55rdquoACS Nano vol 9 no 1 pp 922ndash930 2015

[61] J Chen J Yang H Guo et al ldquoAutomatic mode transitionenabled robust triboelectric nanogeneratorsrdquo ACS Nano vol 9no 12 pp 12334ndash12343 2015

[62] L Zhang B Zhang J Chen et al ldquoLawn structured triboelec-tric nanogenerators for scavenging sweeping wind energy onrooftopsrdquo Advanced Materials vol 28 no 8 pp 1650ndash16562016

[63] Y Wu X Zhong X Wang Y Yang and Z L Wang ldquoHybridenergy cell for simultaneously harvesting wind solar andchemical energiesrdquo Nano Research vol 7 no 11 pp 1631ndash16392014

[64] E Briones J Briones A Cuadrado et al ldquoSeebeck nanoanten-nas for solar energy harvestingrdquoApplied Physics Letters vol 105no 9 Article ID 093108 2014

[65] L Zheng Z-H Lin G Cheng et al ldquoSilicon-based hybrid cellfor harvesting solar energy and raindrop electrostatic energyrdquoNano Energy vol 9 pp 291ndash300 2014

[66] Y Hu J Yang S Niu W Wu and Z L Wang ldquoHybridizingtriboelectrification and electromagnetic induction effects forhigh-efficient mechanical energy harvestingrdquo ACS Nano vol 8no 7 pp 7442ndash7450 2014

[67] Y Yang H Zhang J Chen S Lee T-C Hou and Z L WangldquoSimultaneously harvesting mechanical and chemical energiesby a hybrid cell for self-powered biosensors and personalelectronicsrdquo Energy amp Environmental Science vol 6 no 6 pp1744ndash1749 2013

[68] Y Zi L Lin J Wang et al ldquoTriboelectric-pyroelectric-pie-zoelectric hybrid cell for high-efficient energy-harvesting andself-powered sensingrdquo Advanced Materials vol 27 no 14 pp2340ndash2347 2015

[69] L Zheng G Cheng J Chen et al ldquoA hybridized power panelto simultaneously generate electricity from sunlight raindropsand wind around the clockrdquo Advanced Energy Materials vol 5no 21 2015


[71] Y Yang H Zhang Z-H Lin et al ldquoA hybrid energy cell for self-powered water splittingrdquo Energy amp Environmental Science vol6 no 8 pp 2429ndash2434 2013

[72] Y YangH Zhang Y Liu et al ldquoSilicon-based hybrid energy cellfor self-powered electrodegradation and personal electronicsrdquoACS Nano vol 7 no 3 pp 2808ndash2813 2013

[73] J Chen G Zhu J Yang et al ldquoPersonalized keystroke dynamicsfor self-powered human-machine interfacingrdquo ACS Nano vol9 no 1 pp 105ndash116 2015

[74] W Yang J Chen X Wen et al ldquoTriboelectrification basedmotion sensor for human-machine interfacingrdquo ACS AppliedMaterials amp Interfaces vol 6 no 10 pp 7479ndash7484 2014

[75] S Y Kuang J Chen X B ChengG Zhu andZ LWang ldquoTwo-dimensional rotary triboelectric nanogenerator as a portableand wearable power source for electronicsrdquo Nano Energy vol17 pp 10ndash16 2015

[76] G Zhu P Bai J Chen and Z Lin Wang ldquoPower-generatingshoe insole based on triboelectric nanogenerators for self-powered consumer electronicsrdquo Nano Energy vol 2 no 5 pp688ndash692 2013

[77] T-C Hou Y Yang H Zhang J Chen L-J Chen and Z LinWang ldquoTriboelectric nanogenerator built inside shoe insole forharvesting walking energyrdquo Nano Energy vol 2 no 5 pp 856ndash862 2013

[78] N Zhang J Chen Y Huang et al ldquoA wearable all-solid pho-tovoltaic textilerdquoAdvancedMaterials vol 28 no 2 pp 263ndash2692016

[79] P Bai G Zhu Z-H Lin et al ldquoIntegrated multilayered tri-boelectric nanogenerator for harvesting biomechanical energyfrom human motionsrdquo ACS Nano vol 7 no 4 pp 3713ndash37192013

[80] J Yang J Chen Y Liu W Yang Y Su and Z L Wang ldquoTri-boelectrification-based organic film nanogenerator for acousticenergy harvesting and self-powered active acoustic sensingrdquoACS Nano vol 8 no 3 pp 2649ndash2657 2014

[81] X Fan J Chen J Yang P Bai Z Li and Z LWang ldquoUltrathinrollable paper-based triboelectric nanogenerator for acoustic


energy harvesting and self-powered sound recordingrdquo ACSNano vol 9 no 4 pp 4236ndash4243 2015

[82] Z Li J Chen J Yang et al ldquo120573-cyclodextrin enhanced triboelec-trification for self-powered phenol detection and electrochem-ical degradationrdquo Energy amp Environmental Science vol 8 no 3pp 887ndash896 2015

[83] Z Li J Chen H Guo et al ldquoTriboelectrification-enabled self-powered detection and removal of heavy metal ions in wastew-aterrdquo Advanced Materials 2016

[84] P Bai G Zhu Q Jing et al ldquoMembrane-based self-poweredtriboelectric sensors for pressure change detection and its usesin security surveillance and healthcare monitoringrdquo AdvancedFunctional Materials vol 24 no 37 pp 5807ndash5813 2014

[85] G Zhu Y Su P Bai et al ldquoHarvesting water wave energy byasymmetric screening of electrostatic charges on nanostruc-tured hydrophobic thin-film surfacesrdquo ACS Nano vol 8 no 6pp 10424ndash10432 2014

[86] Y Su XWenG Zhu et al ldquoHybrid triboelectric nanogeneratorfor harvesting water wave energy and as a self-powered distresssignal emitterrdquo Nano Energy vol 9 pp 186ndash195 2014

[87] Y Hu J Yang Q Jing S Niu W Wu and Z L Wang ldquoTri-boelectric nanogenerator built on suspended 3D spiral structureas vibration and positioning sensor and wave energy harvesterrdquoACS Nano vol 7 no 11 pp 10424ndash10432 2015

[88] Q Jing G Zhu P Bai et al ldquoCase-encapsulated triboelectricnanogenerator for harvesting energy from reciprocating slidingmotionrdquo ACS Nano vol 8 no 4 pp 3836ndash3842 2014

[89] Z-H Lin G Zhu Y S Zhou et al ldquoA self-powered triboelectricnanosensor for mercury ion detectionrdquo Angewandte Chemie-International Edition vol 52 no 19 pp 5065ndash5069 2013

[90] W Yang Z Liu J Chen et al ldquoA high-performance white-light-emitting-diodes based on nano-single crystal divanadatesquantum dotsrdquo Scientific Reports vol 5 Article ID 10460 2015

[91] J Chen J Yang Z Li et al ldquoNetworks of triboelectric nanogen-erators for harvesting water wave energy a potential approachtoward blue energyrdquoACSNano vol 9 no 3 pp 3324ndash3331 2015

Submit your manuscripts athttpwwwhindawicom

ScientificaHindawi Publishing Corporationhttpwwwhindawicom Volume 2014

CorrosionInternational Journal of

Hindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Polymer ScienceInternational Journal of



CeramicsJournal of


CompositesJournal of

NanoparticlesJournal of



International Journal of

Biomaterials


NanoscienceJournal of

TextilesHindawi Publishing Corporation httpwwwhindawicom Volume 2014

Journal of

NanotechnologyHindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Journal of

CrystallographyJournal of


The Scientific World JournalHindawi Publishing Corporation httpwwwhindawicom Volume 2014


CoatingsJournal of

Advances in

Materials Science and EngineeringHindawi Publishing Corporationhttpwwwhindawicom Volume 2014

Smart Materials Research



MetallurgyJournal of


BioMed Research International

MaterialsJournal of


Nano

materials


Journal ofNanomaterials


TENG

+ + + + + + + + +

+ + + + + + + + +

(a) (b)

(c) (d)

+ + + + + + + + +

+ + + + + + + + +

+ + + + + + + + + + + + + + + + + + +




minus minus minus minus minus minus minus

minus minus minus minus minus


Figure 1The four fundamental modes of the TENG (a)The vertical contact-separationmode (b)The in-plane sliding mode (c)The single-electrode mode (d) The free-standing triboelectric-layer mode

as an alternativemethod for scavenging the ambientmechan-ical energy in the environment to electricity [12ndash16] TheTENG has a novel and unique mechanism which operatesby a conjunction of triboelectrification and electrostaticinduction through the contact-separation or relative slidingbetween two materials that have opposite tribopolarity Afterthe introduction of TENG in 2012 it has attracted increasinginterest for converting mechanical energy into electricity andfor meeting large scale energy demands Fundamentals thatrely on the coupling between the triboelectric effect and elec-trostatic induction have been reported and various devicestructures which can harness all kinds ofmechanical energiessuch as vibration [17ndash20] human motion [21 22] rotation[23 24] wind [25 26] flowing water [27] and walking [28]have been demonstrated A variety of applications using thistechnology for energy harvesting or sensing purposes havebeen represented [29ndash34] According to the existing reviewson TENGs this paper covers the recent progress in TENGsas a renewable and sustainable power source

2 Fundamentals

The triboelectric effect is a well-known phenomenon thatrefers to the charge generation between two different mate-rials with distinct surface electron affinities When they arebrought into contact through friction the different potentialis created by the separation of the twomaterial surfaces Elec-trostatic induction phenomenon is an electricity-generatingprocess such that electrons in one electrode would flow tothe other electrode through the external load in order tobalance the potential difference As for TENGs they realize

the conversion of mechanical energy into usable electricityby the integration of triboelectrification with electrostaticinductions [35 36] Four fundamental modes of the TENGincluding vertical contact-separationmode [37ndash40] in-planesliding mode [41 42] single-electrode mode [43ndash46] andfree-standing triboelectric-layer mode [47ndash52] have beenproposed and demonstrated as shown in Figure 1

21 Vertical Contact-SeparationMode Theworking principleof TENGs for the case of vertical contact-separation modecan be depicted by the coupling between contact chargingand electrostatic induction Zhu et al are the first to reportan accurate and systematic description of the triboelec-trification-driven energy conversion process in January 2012[13] A full cycle of the electricity generation process ofvertical contact-separation mode TENG is illustrated inFigure 2 Polymethyl methacrylate (PMMA) and polyimide(Kapton) are employed as the two contact materials

Under open-circuit conditions there is no charge gen-erated or induced therefore no electric potential difference(EPD) between the two electrodes emerges (Figure 2(a)(I))When two dielectric materials are applied by an externalforce the two materials are brought into contact with eachother Surface charge transfer then occurs on these two con-tacting surfaces due to triboelectric effect (Figure 2(a)(II)) Asdetermined by the triboelectric series electrons are injectedfrom the surface of PMMA into that of Kapton resultingin the accumulation of net positive charges on the PMMAside and net negative charges on the Kapton side Once thereis a relative separation between two materials due to theresilience EPD is then established between the two electrodes


+++

+ +

minusminusminus

minus minus


+ + + + + + + + + ++


+ + + + + + + + + ++



+ + + + + + + + + ++

Origin

Kapton

PMMA

(I) (II) (III)

(VI) (V)

(IV)

d1

d1d3

d2 d2

d1

d2

d1

d2

d1

d3

d2

+120590minus120590

Pressed Releasing

Pressing Released

d998400

d998400

120

80

40

0

Voc

(V)

12 13 14

Time (s)

Pressing

Releasing

(a)

++

+ +

+

minusminus minus

minusminus



minus



+ + + + + + + + + ++

++++


++++

minus



+ + + + + + + + + ++

+ + ++++

Kapton

PMMA

(I) (II) (III)

(VI) (V)

(IV)

d1

d3

d2

d1

d3

d2

d1

d2

d1

d2

d1

d2+120590minus120590


Pressing Released

d998400

d998400

i

i

PressingReleasing

+120590998400

minus120590998400

+120590998400

minus120590998400

+120590m

minus120590m501 504 507 510

Time (s)

2

0

minus2

minus4

I sc

(120583A

)

(b)



119881oc = minus120590119889

1205760

(1)




1205901015840=

1205901198891015840120576119903119896120576119903119901

1198891120576119903119901+ 1198891015840120576119903119896120576119903119901+ 1198892120576119903119896

(2)





3 the








+ + + + + + + + + + + + + + + + +

+ + + + + + + + + + + + + + + + +

+ + + + + + + + +

+ + + + + + + + +

+ + + + + + + +

+ + + + + + + + + + + + + + + + ++ + + + + + + + +

Top electrodeNylon


Sliding inward

I

I

Sliding outward

(I) (II)

(IV) (III)

(a)

Voltage (V)0

0

(b)

Voltage (V)44363

4000

3000

2000

1000

0

minus79011

(c)


times105

1

08

06

04

02

0

minus10125

(d)

GlassNylon

PTFEElectrode

(e)
















(I) (II)

GroundGround

PDMSPET

ITOCopper

PDMSPET

ITOCopper

(a)

+ + + + + + + + + +

+ + + + + + + + + +

+ + + + + + + + + +

I

I

+ + + + + + + + + +

+ + + + +

+ + + + +





(I) (II)

(IV) (III)


Ground

Active object

Friction surface


Load

Separate

Contact

(b)






FEPAl

Acrylic FEPAl

Acrylic

(a)

+ + + + + + + + + + +

+ + + + + + + + + + + + + + + + + +

+ + + ++ + + + + + +

+ + + +




I

I

(I) (II)

(IV) (III)


FEP

Al(left electrode)


L

Sliding forward

Sliding backward

(b)

+ + + + + + + + + + +


FEP

Al(left electrode)


L


(c)

+ + + + ++ + + + +



FEP



Nylon

(d)





500nm

3 cm

(a)

(d) (e)

(f) (g)

(h)

200

150

100

50

0

Voc

(V)

200

150

100

50

0

Voc

(V)

0 1

18 19

2 3 4 5

T (s)

T (s)

200

150

100

50

0

200

150

100

50

0

0 1 2 3 4 5

T (s)

19 20

T (s)

minus50

minus50I sc

(120583A

) I sc

(120583A

)

T (s)

1500

1000

500

0

150

200

250

300

I sc

peak

(120583A

)

I sc

peak

(120583A

)

0

10 20 30 40 50

100 200 300 400 500 600

F (N)

042

040

038

036Inst

anta

neou

s pow

er (W

)

04 06 08 10 12 14 16

R (MΩ)

12000

11429

10857

10286Po

wer

den

sity

(Wm

2)

W = I2peakR



PMMAPVCCu

AlPET

(a)

Resistor (Ω)108104 105 106 107

Volta

ge (V

)

800

600

400

200

0

Curr

ent (120583

A)

120

90

60

30

0

(b)

Resistor (Ω)108104 105 106 107

Pow

er (m

W)

25

20

15

10

5

0

(c)

J sc

(mA

m2)

6

4

2

0

minus2

minus4J s

c(m

Am

2)

6

4

2

0

minus2

minus4

minus6

Cycle0 200 400 600 800 1000

Initial



cycles cycles


(d)





119873total = 21198992 (3)



AluminumPET

PTFECopper

n = 1 n = 2 n = 3

(a)

Enha

ncem

ent f

acto

r120572

20

16

12

8

4

0

n

0 1 2 3

120572 = 2n2

120572 = 1663n2

(b)

n = 1

n = 2

n = 3

Accu

mul

ativ

e cha

rge (120583

C)150

100

50

0

Time (s)00 05 10 15 20 25 30

(c)

Curr

ent (120583

A)

1200

900

600

300

0

Volta

ge (V

)

400

300

200

100

0

Resistance (Ω)108103 104 105 106 107

(d)

n = 1

n = 2

n = 3

Pow

er (W

) Pow

er (W

)

15

10

05

00

0020

0015

0010

0005

0000

Resistance (Ω)108103 104 105 106 107

Resistance (Ω)108103 104 105 106 107

(e)



AcrylicPTFESpring

CuAl

(a)

I sc

(120583A

)

1200

900

600

300

n

1 2 3 4 5

Voc

(V)

400

300

200

100

0

(b)

I sc

(120583A

)

1200

900

600

300

ΔS (cm2)10 20 30 40 50 60 70

(c)

Resistance (Ω)108103 104 105 106 107

Pow

er d

ensit

y (W

m2)

120

80

40

0

(d)





119873 = 4119899 (4)




Copper electrodes

(a)

Pow

er d

ensit

y (W

m2)

04

03

02

01


(b)

Effici

ency

()

60

50

40

30

20

10

0

Resistance (MΩ)0 500 1000 1500 2000

(c)

Nor

mal

ized

fric

tion

coeffi

cien

t 12

10

08

06

04

02

00Steel rod


(d) (e)







CopperFEP

GoldAcrylic

(a)

Shor

t-circ

uit c

urre

nt (m

A) 06

04

02

00

minus02

minus04

minus06

Time (ms)0 5 10 15 20

(b)

Time (ms)0 5 10 15 20

Ope

n-ci

rcui

t vol

tage

(V)

500

250

0

minus250

minus500

(c)

Mat

ched

load

(MΩ

)

30

25

20

15

10

5

0


250

200

150

100

50

0

(d)

(e)






Resistance (Ω)102101 103 104 105 106 107

Resistance (Ω)102101 103 104 105 106 107

FloatingS

S

N

N

Coi

l

Coi

l

Repulsive force

Fixe

d

Fixe

d

Slid

ing

Acrylic sheetCu


(a) (b)

(d) (e) (f)

(g)

(c)

Out

put p

ower

(mW

)

Out

put p

ower

(mW

)20

15

10

05

00

8

6

4

2

0O

utpu

t vol

tage

40

35

30

25

20

15

10

05

00

minus05

t3

t3

t2

t2

t1

t1

EMIGTENG

Hybrid cell

EMIGTENGHybrid cell

Total

84 s68 s42 s

42 s35 s29 s

46 s37 s31 s

172 s14 s102 s

Time (s)0 5 10 15 20 25 30

Acrylic sheetCu


S-TENG 1 S-TENG 2

Hybridcell

Powermanagement

circuit

A

B

AND gate

XOR gate

LED

LED

C

S







TENG Solar cell

V

(a) (b)

(c)

(d)

(e) (f) (g)

Volta

ge (V

) 0806040200

Time (s)0 50 100 150 200

Volta

ge (V

) 252015100500

0 2 4 6 8 10

Time (s)0 50 100 150 200

Volta

ge (V

)

3

2

1

0

Solar cell


Charging

VoltageCurrent

Volta

ge (V

)4

3

2

1

0

Time (s)0 1000 2000 3000 4000 5000

Curr

ent (

mA

)

12

6

0

minus6

minus12

Charging

Volta

ge (V

)

36

33

30

27

24

Time (h)

Time (h)

0 2 4 6 8 10









5 Applications








IronAcrylicCopper

PTFEAluminum

z

xy

(a)

(d) (e) (f)

(g) (h) (i)

(b)

(c)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V) 150

100

50

0

150

100

50

0

Time (s)

Time (s) Time (s)

1 11 12 13 14

Time (s)

108 11

I II III VI

I II IIIVI

minus50

minus50102 104

1 11 12 13 14

150

120

90

60

30

0

Frequency (Hz)10 36 62 88 114 140

Shor

t-circ

uit c

urre

nt (120583

A)30

24

18

12

6

0

75Hz

26Hz 101Hz

Volta

ge (V

)

100

50

0

minus50

minus100

Time (s)0 10 20 30 40 50

1 cm 2 cm 3 cm 4 cm






KaptonPTFE

Aluminum

(a)

(b) (c)

(d) (e)

(f)

(g) (h)

Max

imum

Voc

(V)

Max

imum

Voc

(V)

250

200

150

100

50

Impact force (N)100 200 300 400 500

Max

imum

I sc

(120583A

)

Max

imum

I sc

(120583A

)

700

600

500

400

300

200

100

300

200

100


0

600

400

200

02 4 6 8 10







PTFECu

Paper

Pow

er (W

m2)

012

008

004

000

Resistance (Ω)102 103 104 105 106 107 108

Resistance (Ω)100 102 104 106 108

Resistance (Ω)100 102 104 106 108

Volta

ge (V

)16

12

08

04

Time (s)

(a) (b) (c)

(d) (e) (f)

(g) (h) (i)

5 10 15

Pow

er d

ensit

y (W

m2)

0075

0060

0045

0030

0015

0000

Volta

ge (V

) 02

001

minus01minus02

Time (s)0 05 1 15 2 25 3 35

Time (s)0

005 1 15 2 25 3 35

4000

2000

Freq

uenc

y(H

z)

AcrylicPETPTFE

CopperAluminum

Pin

PcavityAcoustic

200nm 5120583m

Volta

ge (V

)

60

45

30

15

0

holes

Curr

ent (120583

A)

16

12

8

4

0

(e1)

(e2)







Acrylic sheet

Cu film

Mass loading


(a)

Out

put v

olta

ge (V

)

120

100

80

60

40

20

0

120 140 160100806040200

minus20

minus40

Time (s)

(b)

Out

put c

urre

nt (120583

A)

15

10

5

0

minus5

minus10

Time (s)0 50 100 150 200

(c)

CuAlPET

PTFEAcrylic

(d) (e) (f)

Curr

ent (120583

A)

320

240

160

80

0

Time (s)0 10 20 30 40 50

n = 1

n = 2

n = 3

n = 4

(g)

Accu

mul

ativ

e cha

rge (120583

C) 25

20

15

10

5

0

Time (s)0 2 4 6 8

n = 4

n = 3

n = 2

n = 1

(h)

Max

imum

pea

k po

wer

(mW

)

70

60

50

40

30

20

10

0


(i)






6 Conclusions




Competing Interests


Acknowledgments


References







































































































CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




+++

+ +

minusminusminus

minus minus


+ + + + + + + + + ++


+ + + + + + + + + ++



+ + + + + + + + + ++

Origin

Kapton

PMMA

(I) (II) (III)

(VI) (V)

(IV)

d1

d1d3

d2 d2

d1

d2

d1

d2

d1

d3

d2

+120590minus120590

Pressed Releasing

Pressing Released

d998400

d998400

120

80

40

0

Voc

(V)

12 13 14

Time (s)

Pressing

Releasing

(a)

++

+ +

+

minusminus minus

minusminus



minus



+ + + + + + + + + ++

++++


++++

minus



+ + + + + + + + + ++

+ + ++++

Kapton

PMMA

(I) (II) (III)

(VI) (V)

(IV)

d1

d3

d2

d1

d3

d2

d1

d2

d1

d2

d1

d2+120590minus120590


Pressing Released

d998400

d998400

i

i

PressingReleasing

+120590998400

minus120590998400

+120590998400

minus120590998400

+120590m

minus120590m501 504 507 510

Time (s)

2

0

minus2

minus4

I sc

(120583A

)

(b)



119881oc = minus120590119889

1205760

(1)




1205901015840=

1205901198891015840120576119903119896120576119903119901

1198891120576119903119901+ 1198891015840120576119903119896120576119903119901+ 1198892120576119903119896

(2)





3 the








+ + + + + + + + + + + + + + + + +

+ + + + + + + + + + + + + + + + +

+ + + + + + + + +

+ + + + + + + + +

+ + + + + + + +

+ + + + + + + + + + + + + + + + ++ + + + + + + + +

Top electrodeNylon


Sliding inward

I

I

Sliding outward

(I) (II)

(IV) (III)

(a)

Voltage (V)0

0

(b)

Voltage (V)44363

4000

3000

2000

1000

0

minus79011

(c)


times105

1

08

06

04

02

0

minus10125

(d)

GlassNylon

PTFEElectrode

(e)
















(I) (II)

GroundGround

PDMSPET

ITOCopper

PDMSPET

ITOCopper

(a)

+ + + + + + + + + +

+ + + + + + + + + +

+ + + + + + + + + +

I

I

+ + + + + + + + + +

+ + + + +

+ + + + +





(I) (II)

(IV) (III)


Ground

Active object

Friction surface


Load

Separate

Contact

(b)






FEPAl

Acrylic FEPAl

Acrylic

(a)

+ + + + + + + + + + +

+ + + + + + + + + + + + + + + + + +

+ + + ++ + + + + + +

+ + + +




I

I

(I) (II)

(IV) (III)


FEP

Al(left electrode)


L

Sliding forward

Sliding backward

(b)

+ + + + + + + + + + +


FEP

Al(left electrode)


L


(c)

+ + + + ++ + + + +



FEP



Nylon

(d)





500nm

3 cm

(a)

(d) (e)

(f) (g)

(h)

200

150

100

50

0

Voc

(V)

200

150

100

50

0

Voc

(V)

0 1

18 19

2 3 4 5

T (s)

T (s)

200

150

100

50

0

200

150

100

50

0

0 1 2 3 4 5

T (s)

19 20

T (s)

minus50

minus50I sc

(120583A

) I sc

(120583A

)

T (s)

1500

1000

500

0

150

200

250

300

I sc

peak

(120583A

)

I sc

peak

(120583A

)

0

10 20 30 40 50

100 200 300 400 500 600

F (N)

042

040

038

036Inst

anta

neou

s pow

er (W

)

04 06 08 10 12 14 16

R (MΩ)

12000

11429

10857

10286Po

wer

den

sity

(Wm

2)

W = I2peakR



PMMAPVCCu

AlPET

(a)

Resistor (Ω)108104 105 106 107

Volta

ge (V

)

800

600

400

200

0

Curr

ent (120583

A)

120

90

60

30

0

(b)

Resistor (Ω)108104 105 106 107

Pow

er (m

W)

25

20

15

10

5

0

(c)

J sc

(mA

m2)

6

4

2

0

minus2

minus4J s

c(m

Am

2)

6

4

2

0

minus2

minus4

minus6

Cycle0 200 400 600 800 1000

Initial



cycles cycles


(d)





119873total = 21198992 (3)



AluminumPET

PTFECopper

n = 1 n = 2 n = 3

(a)

Enha

ncem

ent f

acto

r120572

20

16

12

8

4

0

n

0 1 2 3

120572 = 2n2

120572 = 1663n2

(b)

n = 1

n = 2

n = 3

Accu

mul

ativ

e cha

rge (120583

C)150

100

50

0

Time (s)00 05 10 15 20 25 30

(c)

Curr

ent (120583

A)

1200

900

600

300

0

Volta

ge (V

)

400

300

200

100

0

Resistance (Ω)108103 104 105 106 107

(d)

n = 1

n = 2

n = 3

Pow

er (W

) Pow

er (W

)

15

10

05

00

0020

0015

0010

0005

0000

Resistance (Ω)108103 104 105 106 107

Resistance (Ω)108103 104 105 106 107

(e)



AcrylicPTFESpring

CuAl

(a)

I sc

(120583A

)

1200

900

600

300

n

1 2 3 4 5

Voc

(V)

400

300

200

100

0

(b)

I sc

(120583A

)

1200

900

600

300

ΔS (cm2)10 20 30 40 50 60 70

(c)

Resistance (Ω)108103 104 105 106 107

Pow

er d

ensit

y (W

m2)

120

80

40

0

(d)





119873 = 4119899 (4)




Copper electrodes

(a)

Pow

er d

ensit

y (W

m2)

04

03

02

01


(b)

Effici

ency

()

60

50

40

30

20

10

0

Resistance (MΩ)0 500 1000 1500 2000

(c)

Nor

mal

ized

fric

tion

coeffi

cien

t 12

10

08

06

04

02

00Steel rod


(d) (e)







CopperFEP

GoldAcrylic

(a)

Shor

t-circ

uit c

urre

nt (m

A) 06

04

02

00

minus02

minus04

minus06

Time (ms)0 5 10 15 20

(b)

Time (ms)0 5 10 15 20

Ope

n-ci

rcui

t vol

tage

(V)

500

250

0

minus250

minus500

(c)

Mat

ched

load

(MΩ

)

30

25

20

15

10

5

0


250

200

150

100

50

0

(d)

(e)






Resistance (Ω)102101 103 104 105 106 107

Resistance (Ω)102101 103 104 105 106 107

FloatingS

S

N

N

Coi

l

Coi

l

Repulsive force

Fixe

d

Fixe

d

Slid

ing

Acrylic sheetCu


(a) (b)

(d) (e) (f)

(g)

(c)

Out

put p

ower

(mW

)

Out

put p

ower

(mW

)20

15

10

05

00

8

6

4

2

0O

utpu

t vol

tage

40

35

30

25

20

15

10

05

00

minus05

t3

t3

t2

t2

t1

t1

EMIGTENG

Hybrid cell

EMIGTENGHybrid cell

Total

84 s68 s42 s

42 s35 s29 s

46 s37 s31 s

172 s14 s102 s

Time (s)0 5 10 15 20 25 30

Acrylic sheetCu


S-TENG 1 S-TENG 2

Hybridcell

Powermanagement

circuit

A

B

AND gate

XOR gate

LED

LED

C

S







TENG Solar cell

V

(a) (b)

(c)

(d)

(e) (f) (g)

Volta

ge (V

) 0806040200

Time (s)0 50 100 150 200

Volta

ge (V

) 252015100500

0 2 4 6 8 10

Time (s)0 50 100 150 200

Volta

ge (V

)

3

2

1

0

Solar cell


Charging

VoltageCurrent

Volta

ge (V

)4

3

2

1

0

Time (s)0 1000 2000 3000 4000 5000

Curr

ent (

mA

)

12

6

0

minus6

minus12

Charging

Volta

ge (V

)

36

33

30

27

24

Time (h)

Time (h)

0 2 4 6 8 10









5 Applications








IronAcrylicCopper

PTFEAluminum

z

xy

(a)

(d) (e) (f)

(g) (h) (i)

(b)

(c)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V) 150

100

50

0

150

100

50

0

Time (s)

Time (s) Time (s)

1 11 12 13 14

Time (s)

108 11

I II III VI

I II IIIVI

minus50

minus50102 104

1 11 12 13 14

150

120

90

60

30

0

Frequency (Hz)10 36 62 88 114 140

Shor

t-circ

uit c

urre

nt (120583

A)30

24

18

12

6

0

75Hz

26Hz 101Hz

Volta

ge (V

)

100

50

0

minus50

minus100

Time (s)0 10 20 30 40 50

1 cm 2 cm 3 cm 4 cm






KaptonPTFE

Aluminum

(a)

(b) (c)

(d) (e)

(f)

(g) (h)

Max

imum

Voc

(V)

Max

imum

Voc

(V)

250

200

150

100

50

Impact force (N)100 200 300 400 500

Max

imum

I sc

(120583A

)

Max

imum

I sc

(120583A

)

700

600

500

400

300

200

100

300

200

100


0

600

400

200

02 4 6 8 10







PTFECu

Paper

Pow

er (W

m2)

012

008

004

000

Resistance (Ω)102 103 104 105 106 107 108

Resistance (Ω)100 102 104 106 108

Resistance (Ω)100 102 104 106 108

Volta

ge (V

)16

12

08

04

Time (s)

(a) (b) (c)

(d) (e) (f)

(g) (h) (i)

5 10 15

Pow

er d

ensit

y (W

m2)

0075

0060

0045

0030

0015

0000

Volta

ge (V

) 02

001

minus01minus02

Time (s)0 05 1 15 2 25 3 35

Time (s)0

005 1 15 2 25 3 35

4000

2000

Freq

uenc

y(H

z)

AcrylicPETPTFE

CopperAluminum

Pin

PcavityAcoustic

200nm 5120583m

Volta

ge (V

)

60

45

30

15

0

holes

Curr

ent (120583

A)

16

12

8

4

0

(e1)

(e2)







Acrylic sheet

Cu film

Mass loading


(a)

Out

put v

olta

ge (V

)

120

100

80

60

40

20

0

120 140 160100806040200

minus20

minus40

Time (s)

(b)

Out

put c

urre

nt (120583

A)

15

10

5

0

minus5

minus10

Time (s)0 50 100 150 200

(c)

CuAlPET

PTFEAcrylic

(d) (e) (f)

Curr

ent (120583

A)

320

240

160

80

0

Time (s)0 10 20 30 40 50

n = 1

n = 2

n = 3

n = 4

(g)

Accu

mul

ativ

e cha

rge (120583

C) 25

20

15

10

5

0

Time (s)0 2 4 6 8

n = 4

n = 3

n = 2

n = 1

(h)

Max

imum

pea

k po

wer

(mW

)

70

60

50

40

30

20

10

0


(i)






6 Conclusions




Competing Interests


Acknowledgments


References







































































































CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials










+ + + + + + + + + + + + + + + + +

+ + + + + + + + + + + + + + + + +

+ + + + + + + + +

+ + + + + + + + +

+ + + + + + + +

+ + + + + + + + + + + + + + + + ++ + + + + + + + +

Top electrodeNylon


Sliding inward

I

I

Sliding outward

(I) (II)

(IV) (III)

(a)

Voltage (V)0

0

(b)

Voltage (V)44363

4000

3000

2000

1000

0

minus79011

(c)


times105

1

08

06

04

02

0

minus10125

(d)

GlassNylon

PTFEElectrode

(e)
















(I) (II)

GroundGround

PDMSPET

ITOCopper

PDMSPET

ITOCopper

(a)

+ + + + + + + + + +

+ + + + + + + + + +

+ + + + + + + + + +

I

I

+ + + + + + + + + +

+ + + + +

+ + + + +





(I) (II)

(IV) (III)


Ground

Active object

Friction surface


Load

Separate

Contact

(b)






FEPAl

Acrylic FEPAl

Acrylic

(a)

+ + + + + + + + + + +

+ + + + + + + + + + + + + + + + + +

+ + + ++ + + + + + +

+ + + +




I

I

(I) (II)

(IV) (III)


FEP

Al(left electrode)


L

Sliding forward

Sliding backward

(b)

+ + + + + + + + + + +


FEP

Al(left electrode)


L


(c)

+ + + + ++ + + + +



FEP



Nylon

(d)





500nm

3 cm

(a)

(d) (e)

(f) (g)

(h)

200

150

100

50

0

Voc

(V)

200

150

100

50

0

Voc

(V)

0 1

18 19

2 3 4 5

T (s)

T (s)

200

150

100

50

0

200

150

100

50

0

0 1 2 3 4 5

T (s)

19 20

T (s)

minus50

minus50I sc

(120583A

) I sc

(120583A

)

T (s)

1500

1000

500

0

150

200

250

300

I sc

peak

(120583A

)

I sc

peak

(120583A

)

0

10 20 30 40 50

100 200 300 400 500 600

F (N)

042

040

038

036Inst

anta

neou

s pow

er (W

)

04 06 08 10 12 14 16

R (MΩ)

12000

11429

10857

10286Po

wer

den

sity

(Wm

2)

W = I2peakR



PMMAPVCCu

AlPET

(a)

Resistor (Ω)108104 105 106 107

Volta

ge (V

)

800

600

400

200

0

Curr

ent (120583

A)

120

90

60

30

0

(b)

Resistor (Ω)108104 105 106 107

Pow

er (m

W)

25

20

15

10

5

0

(c)

J sc

(mA

m2)

6

4

2

0

minus2

minus4J s

c(m

Am

2)

6

4

2

0

minus2

minus4

minus6

Cycle0 200 400 600 800 1000

Initial



cycles cycles


(d)





119873total = 21198992 (3)



AluminumPET

PTFECopper

n = 1 n = 2 n = 3

(a)

Enha

ncem

ent f

acto

r120572

20

16

12

8

4

0

n

0 1 2 3

120572 = 2n2

120572 = 1663n2

(b)

n = 1

n = 2

n = 3

Accu

mul

ativ

e cha

rge (120583

C)150

100

50

0

Time (s)00 05 10 15 20 25 30

(c)

Curr

ent (120583

A)

1200

900

600

300

0

Volta

ge (V

)

400

300

200

100

0

Resistance (Ω)108103 104 105 106 107

(d)

n = 1

n = 2

n = 3

Pow

er (W

) Pow

er (W

)

15

10

05

00

0020

0015

0010

0005

0000

Resistance (Ω)108103 104 105 106 107

Resistance (Ω)108103 104 105 106 107

(e)



AcrylicPTFESpring

CuAl

(a)

I sc

(120583A

)

1200

900

600

300

n

1 2 3 4 5

Voc

(V)

400

300

200

100

0

(b)

I sc

(120583A

)

1200

900

600

300

ΔS (cm2)10 20 30 40 50 60 70

(c)

Resistance (Ω)108103 104 105 106 107

Pow

er d

ensit

y (W

m2)

120

80

40

0

(d)





119873 = 4119899 (4)




Copper electrodes

(a)

Pow

er d

ensit

y (W

m2)

04

03

02

01


(b)

Effici

ency

()

60

50

40

30

20

10

0

Resistance (MΩ)0 500 1000 1500 2000

(c)

Nor

mal

ized

fric

tion

coeffi

cien

t 12

10

08

06

04

02

00Steel rod


(d) (e)







CopperFEP

GoldAcrylic

(a)

Shor

t-circ

uit c

urre

nt (m

A) 06

04

02

00

minus02

minus04

minus06

Time (ms)0 5 10 15 20

(b)

Time (ms)0 5 10 15 20

Ope

n-ci

rcui

t vol

tage

(V)

500

250

0

minus250

minus500

(c)

Mat

ched

load

(MΩ

)

30

25

20

15

10

5

0


250

200

150

100

50

0

(d)

(e)






Resistance (Ω)102101 103 104 105 106 107

Resistance (Ω)102101 103 104 105 106 107

FloatingS

S

N

N

Coi

l

Coi

l

Repulsive force

Fixe

d

Fixe

d

Slid

ing

Acrylic sheetCu


(a) (b)

(d) (e) (f)

(g)

(c)

Out

put p

ower

(mW

)

Out

put p

ower

(mW

)20

15

10

05

00

8

6

4

2

0O

utpu

t vol

tage

40

35

30

25

20

15

10

05

00

minus05

t3

t3

t2

t2

t1

t1

EMIGTENG

Hybrid cell

EMIGTENGHybrid cell

Total

84 s68 s42 s

42 s35 s29 s

46 s37 s31 s

172 s14 s102 s

Time (s)0 5 10 15 20 25 30

Acrylic sheetCu


S-TENG 1 S-TENG 2

Hybridcell

Powermanagement

circuit

A

B

AND gate

XOR gate

LED

LED

C

S







TENG Solar cell

V

(a) (b)

(c)

(d)

(e) (f) (g)

Volta

ge (V

) 0806040200

Time (s)0 50 100 150 200

Volta

ge (V

) 252015100500

0 2 4 6 8 10

Time (s)0 50 100 150 200

Volta

ge (V

)

3

2

1

0

Solar cell


Charging

VoltageCurrent

Volta

ge (V

)4

3

2

1

0

Time (s)0 1000 2000 3000 4000 5000

Curr

ent (

mA

)

12

6

0

minus6

minus12

Charging

Volta

ge (V

)

36

33

30

27

24

Time (h)

Time (h)

0 2 4 6 8 10









5 Applications








IronAcrylicCopper

PTFEAluminum

z

xy

(a)

(d) (e) (f)

(g) (h) (i)

(b)

(c)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V) 150

100

50

0

150

100

50

0

Time (s)

Time (s) Time (s)

1 11 12 13 14

Time (s)

108 11

I II III VI

I II IIIVI

minus50

minus50102 104

1 11 12 13 14

150

120

90

60

30

0

Frequency (Hz)10 36 62 88 114 140

Shor

t-circ

uit c

urre

nt (120583

A)30

24

18

12

6

0

75Hz

26Hz 101Hz

Volta

ge (V

)

100

50

0

minus50

minus100

Time (s)0 10 20 30 40 50

1 cm 2 cm 3 cm 4 cm






KaptonPTFE

Aluminum

(a)

(b) (c)

(d) (e)

(f)

(g) (h)

Max

imum

Voc

(V)

Max

imum

Voc

(V)

250

200

150

100

50

Impact force (N)100 200 300 400 500

Max

imum

I sc

(120583A

)

Max

imum

I sc

(120583A

)

700

600

500

400

300

200

100

300

200

100


0

600

400

200

02 4 6 8 10







PTFECu

Paper

Pow

er (W

m2)

012

008

004

000

Resistance (Ω)102 103 104 105 106 107 108

Resistance (Ω)100 102 104 106 108

Resistance (Ω)100 102 104 106 108

Volta

ge (V

)16

12

08

04

Time (s)

(a) (b) (c)

(d) (e) (f)

(g) (h) (i)

5 10 15

Pow

er d

ensit

y (W

m2)

0075

0060

0045

0030

0015

0000

Volta

ge (V

) 02

001

minus01minus02

Time (s)0 05 1 15 2 25 3 35

Time (s)0

005 1 15 2 25 3 35

4000

2000

Freq

uenc

y(H

z)

AcrylicPETPTFE

CopperAluminum

Pin

PcavityAcoustic

200nm 5120583m

Volta

ge (V

)

60

45

30

15

0

holes

Curr

ent (120583

A)

16

12

8

4

0

(e1)

(e2)







Acrylic sheet

Cu film

Mass loading


(a)

Out

put v

olta

ge (V

)

120

100

80

60

40

20

0

120 140 160100806040200

minus20

minus40

Time (s)

(b)

Out

put c

urre

nt (120583

A)

15

10

5

0

minus5

minus10

Time (s)0 50 100 150 200

(c)

CuAlPET

PTFEAcrylic

(d) (e) (f)

Curr

ent (120583

A)

320

240

160

80

0

Time (s)0 10 20 30 40 50

n = 1

n = 2

n = 3

n = 4

(g)

Accu

mul

ativ

e cha

rge (120583

C) 25

20

15

10

5

0

Time (s)0 2 4 6 8

n = 4

n = 3

n = 2

n = 1

(h)

Max

imum

pea

k po

wer

(mW

)

70

60

50

40

30

20

10

0


(i)






6 Conclusions




Competing Interests


Acknowledgments


References







































































































CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials














(I) (II)

GroundGround

PDMSPET

ITOCopper

PDMSPET

ITOCopper

(a)

+ + + + + + + + + +

+ + + + + + + + + +

+ + + + + + + + + +

I

I

+ + + + + + + + + +

+ + + + +

+ + + + +





(I) (II)

(IV) (III)


Ground

Active object

Friction surface


Load

Separate

Contact

(b)






FEPAl

Acrylic FEPAl

Acrylic

(a)

+ + + + + + + + + + +

+ + + + + + + + + + + + + + + + + +

+ + + ++ + + + + + +

+ + + +




I

I

(I) (II)

(IV) (III)


FEP

Al(left electrode)


L

Sliding forward

Sliding backward

(b)

+ + + + + + + + + + +


FEP

Al(left electrode)


L


(c)

+ + + + ++ + + + +



FEP



Nylon

(d)





500nm

3 cm

(a)

(d) (e)

(f) (g)

(h)

200

150

100

50

0

Voc

(V)

200

150

100

50

0

Voc

(V)

0 1

18 19

2 3 4 5

T (s)

T (s)

200

150

100

50

0

200

150

100

50

0

0 1 2 3 4 5

T (s)

19 20

T (s)

minus50

minus50I sc

(120583A

) I sc

(120583A

)

T (s)

1500

1000

500

0

150

200

250

300

I sc

peak

(120583A

)

I sc

peak

(120583A

)

0

10 20 30 40 50

100 200 300 400 500 600

F (N)

042

040

038

036Inst

anta

neou

s pow

er (W

)

04 06 08 10 12 14 16

R (MΩ)

12000

11429

10857

10286Po

wer

den

sity

(Wm

2)

W = I2peakR



PMMAPVCCu

AlPET

(a)

Resistor (Ω)108104 105 106 107

Volta

ge (V

)

800

600

400

200

0

Curr

ent (120583

A)

120

90

60

30

0

(b)

Resistor (Ω)108104 105 106 107

Pow

er (m

W)

25

20

15

10

5

0

(c)

J sc

(mA

m2)

6

4

2

0

minus2

minus4J s

c(m

Am

2)

6

4

2

0

minus2

minus4

minus6

Cycle0 200 400 600 800 1000

Initial



cycles cycles


(d)





119873total = 21198992 (3)



AluminumPET

PTFECopper

n = 1 n = 2 n = 3

(a)

Enha

ncem

ent f

acto

r120572

20

16

12

8

4

0

n

0 1 2 3

120572 = 2n2

120572 = 1663n2

(b)

n = 1

n = 2

n = 3

Accu

mul

ativ

e cha

rge (120583

C)150

100

50

0

Time (s)00 05 10 15 20 25 30

(c)

Curr

ent (120583

A)

1200

900

600

300

0

Volta

ge (V

)

400

300

200

100

0

Resistance (Ω)108103 104 105 106 107

(d)

n = 1

n = 2

n = 3

Pow

er (W

) Pow

er (W

)

15

10

05

00

0020

0015

0010

0005

0000

Resistance (Ω)108103 104 105 106 107

Resistance (Ω)108103 104 105 106 107

(e)



AcrylicPTFESpring

CuAl

(a)

I sc

(120583A

)

1200

900

600

300

n

1 2 3 4 5

Voc

(V)

400

300

200

100

0

(b)

I sc

(120583A

)

1200

900

600

300

ΔS (cm2)10 20 30 40 50 60 70

(c)

Resistance (Ω)108103 104 105 106 107

Pow

er d

ensit

y (W

m2)

120

80

40

0

(d)





119873 = 4119899 (4)




Copper electrodes

(a)

Pow

er d

ensit

y (W

m2)

04

03

02

01


(b)

Effici

ency

()

60

50

40

30

20

10

0

Resistance (MΩ)0 500 1000 1500 2000

(c)

Nor

mal

ized

fric

tion

coeffi

cien

t 12

10

08

06

04

02

00Steel rod


(d) (e)







CopperFEP

GoldAcrylic

(a)

Shor

t-circ

uit c

urre

nt (m

A) 06

04

02

00

minus02

minus04

minus06

Time (ms)0 5 10 15 20

(b)

Time (ms)0 5 10 15 20

Ope

n-ci

rcui

t vol

tage

(V)

500

250

0

minus250

minus500

(c)

Mat

ched

load

(MΩ

)

30

25

20

15

10

5

0


250

200

150

100

50

0

(d)

(e)






Resistance (Ω)102101 103 104 105 106 107

Resistance (Ω)102101 103 104 105 106 107

FloatingS

S

N

N

Coi

l

Coi

l

Repulsive force

Fixe

d

Fixe

d

Slid

ing

Acrylic sheetCu


(a) (b)

(d) (e) (f)

(g)

(c)

Out

put p

ower

(mW

)

Out

put p

ower

(mW

)20

15

10

05

00

8

6

4

2

0O

utpu

t vol

tage

40

35

30

25

20

15

10

05

00

minus05

t3

t3

t2

t2

t1

t1

EMIGTENG

Hybrid cell

EMIGTENGHybrid cell

Total

84 s68 s42 s

42 s35 s29 s

46 s37 s31 s

172 s14 s102 s

Time (s)0 5 10 15 20 25 30

Acrylic sheetCu


S-TENG 1 S-TENG 2

Hybridcell

Powermanagement

circuit

A

B

AND gate

XOR gate

LED

LED

C

S







TENG Solar cell

V

(a) (b)

(c)

(d)

(e) (f) (g)

Volta

ge (V

) 0806040200

Time (s)0 50 100 150 200

Volta

ge (V

) 252015100500

0 2 4 6 8 10

Time (s)0 50 100 150 200

Volta

ge (V

)

3

2

1

0

Solar cell


Charging

VoltageCurrent

Volta

ge (V

)4

3

2

1

0

Time (s)0 1000 2000 3000 4000 5000

Curr

ent (

mA

)

12

6

0

minus6

minus12

Charging

Volta

ge (V

)

36

33

30

27

24

Time (h)

Time (h)

0 2 4 6 8 10









5 Applications








IronAcrylicCopper

PTFEAluminum

z

xy

(a)

(d) (e) (f)

(g) (h) (i)

(b)

(c)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V) 150

100

50

0

150

100

50

0

Time (s)

Time (s) Time (s)

1 11 12 13 14

Time (s)

108 11

I II III VI

I II IIIVI

minus50

minus50102 104

1 11 12 13 14

150

120

90

60

30

0

Frequency (Hz)10 36 62 88 114 140

Shor

t-circ

uit c

urre

nt (120583

A)30

24

18

12

6

0

75Hz

26Hz 101Hz

Volta

ge (V

)

100

50

0

minus50

minus100

Time (s)0 10 20 30 40 50

1 cm 2 cm 3 cm 4 cm






KaptonPTFE

Aluminum

(a)

(b) (c)

(d) (e)

(f)

(g) (h)

Max

imum

Voc

(V)

Max

imum

Voc

(V)

250

200

150

100

50

Impact force (N)100 200 300 400 500

Max

imum

I sc

(120583A

)

Max

imum

I sc

(120583A

)

700

600

500

400

300

200

100

300

200

100


0

600

400

200

02 4 6 8 10







PTFECu

Paper

Pow

er (W

m2)

012

008

004

000

Resistance (Ω)102 103 104 105 106 107 108

Resistance (Ω)100 102 104 106 108

Resistance (Ω)100 102 104 106 108

Volta

ge (V

)16

12

08

04

Time (s)

(a) (b) (c)

(d) (e) (f)

(g) (h) (i)

5 10 15

Pow

er d

ensit

y (W

m2)

0075

0060

0045

0030

0015

0000

Volta

ge (V

) 02

001

minus01minus02

Time (s)0 05 1 15 2 25 3 35

Time (s)0

005 1 15 2 25 3 35

4000

2000

Freq

uenc

y(H

z)

AcrylicPETPTFE

CopperAluminum

Pin

PcavityAcoustic

200nm 5120583m

Volta

ge (V

)

60

45

30

15

0

holes

Curr

ent (120583

A)

16

12

8

4

0

(e1)

(e2)







Acrylic sheet

Cu film

Mass loading


(a)

Out

put v

olta

ge (V

)

120

100

80

60

40

20

0

120 140 160100806040200

minus20

minus40

Time (s)

(b)

Out

put c

urre

nt (120583

A)

15

10

5

0

minus5

minus10

Time (s)0 50 100 150 200

(c)

CuAlPET

PTFEAcrylic

(d) (e) (f)

Curr

ent (120583

A)

320

240

160

80

0

Time (s)0 10 20 30 40 50

n = 1

n = 2

n = 3

n = 4

(g)

Accu

mul

ativ

e cha

rge (120583

C) 25

20

15

10

5

0

Time (s)0 2 4 6 8

n = 4

n = 3

n = 2

n = 1

(h)

Max

imum

pea

k po

wer

(mW

)

70

60

50

40

30

20

10

0


(i)






6 Conclusions




Competing Interests


Acknowledgments


References







































































































CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




(I) (II)

GroundGround

PDMSPET

ITOCopper

PDMSPET

ITOCopper

(a)

+ + + + + + + + + +

+ + + + + + + + + +

+ + + + + + + + + +

I

I

+ + + + + + + + + +

+ + + + +

+ + + + +





(I) (II)

(IV) (III)


Ground

Active object

Friction surface


Load

Separate

Contact

(b)






FEPAl

Acrylic FEPAl

Acrylic

(a)

+ + + + + + + + + + +

+ + + + + + + + + + + + + + + + + +

+ + + ++ + + + + + +

+ + + +




I

I

(I) (II)

(IV) (III)


FEP

Al(left electrode)


L

Sliding forward

Sliding backward

(b)

+ + + + + + + + + + +


FEP

Al(left electrode)


L


(c)

+ + + + ++ + + + +



FEP



Nylon

(d)





500nm

3 cm

(a)

(d) (e)

(f) (g)

(h)

200

150

100

50

0

Voc

(V)

200

150

100

50

0

Voc

(V)

0 1

18 19

2 3 4 5

T (s)

T (s)

200

150

100

50

0

200

150

100

50

0

0 1 2 3 4 5

T (s)

19 20

T (s)

minus50

minus50I sc

(120583A

) I sc

(120583A

)

T (s)

1500

1000

500

0

150

200

250

300

I sc

peak

(120583A

)

I sc

peak

(120583A

)

0

10 20 30 40 50

100 200 300 400 500 600

F (N)

042

040

038

036Inst

anta

neou

s pow

er (W

)

04 06 08 10 12 14 16

R (MΩ)

12000

11429

10857

10286Po

wer

den

sity

(Wm

2)

W = I2peakR



PMMAPVCCu

AlPET

(a)

Resistor (Ω)108104 105 106 107

Volta

ge (V

)

800

600

400

200

0

Curr

ent (120583

A)

120

90

60

30

0

(b)

Resistor (Ω)108104 105 106 107

Pow

er (m

W)

25

20

15

10

5

0

(c)

J sc

(mA

m2)

6

4

2

0

minus2

minus4J s

c(m

Am

2)

6

4

2

0

minus2

minus4

minus6

Cycle0 200 400 600 800 1000

Initial



cycles cycles


(d)





119873total = 21198992 (3)



AluminumPET

PTFECopper

n = 1 n = 2 n = 3

(a)

Enha

ncem

ent f

acto

r120572

20

16

12

8

4

0

n

0 1 2 3

120572 = 2n2

120572 = 1663n2

(b)

n = 1

n = 2

n = 3

Accu

mul

ativ

e cha

rge (120583

C)150

100

50

0

Time (s)00 05 10 15 20 25 30

(c)

Curr

ent (120583

A)

1200

900

600

300

0

Volta

ge (V

)

400

300

200

100

0

Resistance (Ω)108103 104 105 106 107

(d)

n = 1

n = 2

n = 3

Pow

er (W

) Pow

er (W

)

15

10

05

00

0020

0015

0010

0005

0000

Resistance (Ω)108103 104 105 106 107

Resistance (Ω)108103 104 105 106 107

(e)



AcrylicPTFESpring

CuAl

(a)

I sc

(120583A

)

1200

900

600

300

n

1 2 3 4 5

Voc

(V)

400

300

200

100

0

(b)

I sc

(120583A

)

1200

900

600

300

ΔS (cm2)10 20 30 40 50 60 70

(c)

Resistance (Ω)108103 104 105 106 107

Pow

er d

ensit

y (W

m2)

120

80

40

0

(d)





119873 = 4119899 (4)




Copper electrodes

(a)

Pow

er d

ensit

y (W

m2)

04

03

02

01


(b)

Effici

ency

()

60

50

40

30

20

10

0

Resistance (MΩ)0 500 1000 1500 2000

(c)

Nor

mal

ized

fric

tion

coeffi

cien

t 12

10

08

06

04

02

00Steel rod


(d) (e)







CopperFEP

GoldAcrylic

(a)

Shor

t-circ

uit c

urre

nt (m

A) 06

04

02

00

minus02

minus04

minus06

Time (ms)0 5 10 15 20

(b)

Time (ms)0 5 10 15 20

Ope

n-ci

rcui

t vol

tage

(V)

500

250

0

minus250

minus500

(c)

Mat

ched

load

(MΩ

)

30

25

20

15

10

5

0


250

200

150

100

50

0

(d)

(e)






Resistance (Ω)102101 103 104 105 106 107

Resistance (Ω)102101 103 104 105 106 107

FloatingS

S

N

N

Coi

l

Coi

l

Repulsive force

Fixe

d

Fixe

d

Slid

ing

Acrylic sheetCu


(a) (b)

(d) (e) (f)

(g)

(c)

Out

put p

ower

(mW

)

Out

put p

ower

(mW

)20

15

10

05

00

8

6

4

2

0O

utpu

t vol

tage

40

35

30

25

20

15

10

05

00

minus05

t3

t3

t2

t2

t1

t1

EMIGTENG

Hybrid cell

EMIGTENGHybrid cell

Total

84 s68 s42 s

42 s35 s29 s

46 s37 s31 s

172 s14 s102 s

Time (s)0 5 10 15 20 25 30

Acrylic sheetCu


S-TENG 1 S-TENG 2

Hybridcell

Powermanagement

circuit

A

B

AND gate

XOR gate

LED

LED

C

S







TENG Solar cell

V

(a) (b)

(c)

(d)

(e) (f) (g)

Volta

ge (V

) 0806040200

Time (s)0 50 100 150 200

Volta

ge (V

) 252015100500

0 2 4 6 8 10

Time (s)0 50 100 150 200

Volta

ge (V

)

3

2

1

0

Solar cell


Charging

VoltageCurrent

Volta

ge (V

)4

3

2

1

0

Time (s)0 1000 2000 3000 4000 5000

Curr

ent (

mA

)

12

6

0

minus6

minus12

Charging

Volta

ge (V

)

36

33

30

27

24

Time (h)

Time (h)

0 2 4 6 8 10









5 Applications








IronAcrylicCopper

PTFEAluminum

z

xy

(a)

(d) (e) (f)

(g) (h) (i)

(b)

(c)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V) 150

100

50

0

150

100

50

0

Time (s)

Time (s) Time (s)

1 11 12 13 14

Time (s)

108 11

I II III VI

I II IIIVI

minus50

minus50102 104

1 11 12 13 14

150

120

90

60

30

0

Frequency (Hz)10 36 62 88 114 140

Shor

t-circ

uit c

urre

nt (120583

A)30

24

18

12

6

0

75Hz

26Hz 101Hz

Volta

ge (V

)

100

50

0

minus50

minus100

Time (s)0 10 20 30 40 50

1 cm 2 cm 3 cm 4 cm






KaptonPTFE

Aluminum

(a)

(b) (c)

(d) (e)

(f)

(g) (h)

Max

imum

Voc

(V)

Max

imum

Voc

(V)

250

200

150

100

50

Impact force (N)100 200 300 400 500

Max

imum

I sc

(120583A

)

Max

imum

I sc

(120583A

)

700

600

500

400

300

200

100

300

200

100


0

600

400

200

02 4 6 8 10







PTFECu

Paper

Pow

er (W

m2)

012

008

004

000

Resistance (Ω)102 103 104 105 106 107 108

Resistance (Ω)100 102 104 106 108

Resistance (Ω)100 102 104 106 108

Volta

ge (V

)16

12

08

04

Time (s)

(a) (b) (c)

(d) (e) (f)

(g) (h) (i)

5 10 15

Pow

er d

ensit

y (W

m2)

0075

0060

0045

0030

0015

0000

Volta

ge (V

) 02

001

minus01minus02

Time (s)0 05 1 15 2 25 3 35

Time (s)0

005 1 15 2 25 3 35

4000

2000

Freq

uenc

y(H

z)

AcrylicPETPTFE

CopperAluminum

Pin

PcavityAcoustic

200nm 5120583m

Volta

ge (V

)

60

45

30

15

0

holes

Curr

ent (120583

A)

16

12

8

4

0

(e1)

(e2)







Acrylic sheet

Cu film

Mass loading


(a)

Out

put v

olta

ge (V

)

120

100

80

60

40

20

0

120 140 160100806040200

minus20

minus40

Time (s)

(b)

Out

put c

urre

nt (120583

A)

15

10

5

0

minus5

minus10

Time (s)0 50 100 150 200

(c)

CuAlPET

PTFEAcrylic

(d) (e) (f)

Curr

ent (120583

A)

320

240

160

80

0

Time (s)0 10 20 30 40 50

n = 1

n = 2

n = 3

n = 4

(g)

Accu

mul

ativ

e cha

rge (120583

C) 25

20

15

10

5

0

Time (s)0 2 4 6 8

n = 4

n = 3

n = 2

n = 1

(h)

Max

imum

pea

k po

wer

(mW

)

70

60

50

40

30

20

10

0


(i)






6 Conclusions




Competing Interests


Acknowledgments


References







































































































CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




FEPAl

Acrylic FEPAl

Acrylic

(a)

+ + + + + + + + + + +

+ + + + + + + + + + + + + + + + + +

+ + + ++ + + + + + +

+ + + +




I

I

(I) (II)

(IV) (III)


FEP

Al(left electrode)


L

Sliding forward

Sliding backward

(b)

+ + + + + + + + + + +


FEP

Al(left electrode)


L


(c)

+ + + + ++ + + + +



FEP



Nylon

(d)





500nm

3 cm

(a)

(d) (e)

(f) (g)

(h)

200

150

100

50

0

Voc

(V)

200

150

100

50

0

Voc

(V)

0 1

18 19

2 3 4 5

T (s)

T (s)

200

150

100

50

0

200

150

100

50

0

0 1 2 3 4 5

T (s)

19 20

T (s)

minus50

minus50I sc

(120583A

) I sc

(120583A

)

T (s)

1500

1000

500

0

150

200

250

300

I sc

peak

(120583A

)

I sc

peak

(120583A

)

0

10 20 30 40 50

100 200 300 400 500 600

F (N)

042

040

038

036Inst

anta

neou

s pow

er (W

)

04 06 08 10 12 14 16

R (MΩ)

12000

11429

10857

10286Po

wer

den

sity

(Wm

2)

W = I2peakR



PMMAPVCCu

AlPET

(a)

Resistor (Ω)108104 105 106 107

Volta

ge (V

)

800

600

400

200

0

Curr

ent (120583

A)

120

90

60

30

0

(b)

Resistor (Ω)108104 105 106 107

Pow

er (m

W)

25

20

15

10

5

0

(c)

J sc

(mA

m2)

6

4

2

0

minus2

minus4J s

c(m

Am

2)

6

4

2

0

minus2

minus4

minus6

Cycle0 200 400 600 800 1000

Initial



cycles cycles


(d)





119873total = 21198992 (3)



AluminumPET

PTFECopper

n = 1 n = 2 n = 3

(a)

Enha

ncem

ent f

acto

r120572

20

16

12

8

4

0

n

0 1 2 3

120572 = 2n2

120572 = 1663n2

(b)

n = 1

n = 2

n = 3

Accu

mul

ativ

e cha

rge (120583

C)150

100

50

0

Time (s)00 05 10 15 20 25 30

(c)

Curr

ent (120583

A)

1200

900

600

300

0

Volta

ge (V

)

400

300

200

100

0

Resistance (Ω)108103 104 105 106 107

(d)

n = 1

n = 2

n = 3

Pow

er (W

) Pow

er (W

)

15

10

05

00

0020

0015

0010

0005

0000

Resistance (Ω)108103 104 105 106 107

Resistance (Ω)108103 104 105 106 107

(e)



AcrylicPTFESpring

CuAl

(a)

I sc

(120583A

)

1200

900

600

300

n

1 2 3 4 5

Voc

(V)

400

300

200

100

0

(b)

I sc

(120583A

)

1200

900

600

300

ΔS (cm2)10 20 30 40 50 60 70

(c)

Resistance (Ω)108103 104 105 106 107

Pow

er d

ensit

y (W

m2)

120

80

40

0

(d)





119873 = 4119899 (4)




Copper electrodes

(a)

Pow

er d

ensit

y (W

m2)

04

03

02

01


(b)

Effici

ency

()

60

50

40

30

20

10

0

Resistance (MΩ)0 500 1000 1500 2000

(c)

Nor

mal

ized

fric

tion

coeffi

cien

t 12

10

08

06

04

02

00Steel rod


(d) (e)







CopperFEP

GoldAcrylic

(a)

Shor

t-circ

uit c

urre

nt (m

A) 06

04

02

00

minus02

minus04

minus06

Time (ms)0 5 10 15 20

(b)

Time (ms)0 5 10 15 20

Ope

n-ci

rcui

t vol

tage

(V)

500

250

0

minus250

minus500

(c)

Mat

ched

load

(MΩ

)

30

25

20

15

10

5

0


250

200

150

100

50

0

(d)

(e)






Resistance (Ω)102101 103 104 105 106 107

Resistance (Ω)102101 103 104 105 106 107

FloatingS

S

N

N

Coi

l

Coi

l

Repulsive force

Fixe

d

Fixe

d

Slid

ing

Acrylic sheetCu


(a) (b)

(d) (e) (f)

(g)

(c)

Out

put p

ower

(mW

)

Out

put p

ower

(mW

)20

15

10

05

00

8

6

4

2

0O

utpu

t vol

tage

40

35

30

25

20

15

10

05

00

minus05

t3

t3

t2

t2

t1

t1

EMIGTENG

Hybrid cell

EMIGTENGHybrid cell

Total

84 s68 s42 s

42 s35 s29 s

46 s37 s31 s

172 s14 s102 s

Time (s)0 5 10 15 20 25 30

Acrylic sheetCu


S-TENG 1 S-TENG 2

Hybridcell

Powermanagement

circuit

A

B

AND gate

XOR gate

LED

LED

C

S







TENG Solar cell

V

(a) (b)

(c)

(d)

(e) (f) (g)

Volta

ge (V

) 0806040200

Time (s)0 50 100 150 200

Volta

ge (V

) 252015100500

0 2 4 6 8 10

Time (s)0 50 100 150 200

Volta

ge (V

)

3

2

1

0

Solar cell


Charging

VoltageCurrent

Volta

ge (V

)4

3

2

1

0

Time (s)0 1000 2000 3000 4000 5000

Curr

ent (

mA

)

12

6

0

minus6

minus12

Charging

Volta

ge (V

)

36

33

30

27

24

Time (h)

Time (h)

0 2 4 6 8 10









5 Applications








IronAcrylicCopper

PTFEAluminum

z

xy

(a)

(d) (e) (f)

(g) (h) (i)

(b)

(c)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V) 150

100

50

0

150

100

50

0

Time (s)

Time (s) Time (s)

1 11 12 13 14

Time (s)

108 11

I II III VI

I II IIIVI

minus50

minus50102 104

1 11 12 13 14

150

120

90

60

30

0

Frequency (Hz)10 36 62 88 114 140

Shor

t-circ

uit c

urre

nt (120583

A)30

24

18

12

6

0

75Hz

26Hz 101Hz

Volta

ge (V

)

100

50

0

minus50

minus100

Time (s)0 10 20 30 40 50

1 cm 2 cm 3 cm 4 cm






KaptonPTFE

Aluminum

(a)

(b) (c)

(d) (e)

(f)

(g) (h)

Max

imum

Voc

(V)

Max

imum

Voc

(V)

250

200

150

100

50

Impact force (N)100 200 300 400 500

Max

imum

I sc

(120583A

)

Max

imum

I sc

(120583A

)

700

600

500

400

300

200

100

300

200

100


0

600

400

200

02 4 6 8 10







PTFECu

Paper

Pow

er (W

m2)

012

008

004

000

Resistance (Ω)102 103 104 105 106 107 108

Resistance (Ω)100 102 104 106 108

Resistance (Ω)100 102 104 106 108

Volta

ge (V

)16

12

08

04

Time (s)

(a) (b) (c)

(d) (e) (f)

(g) (h) (i)

5 10 15

Pow

er d

ensit

y (W

m2)

0075

0060

0045

0030

0015

0000

Volta

ge (V

) 02

001

minus01minus02

Time (s)0 05 1 15 2 25 3 35

Time (s)0

005 1 15 2 25 3 35

4000

2000

Freq

uenc

y(H

z)

AcrylicPETPTFE

CopperAluminum

Pin

PcavityAcoustic

200nm 5120583m

Volta

ge (V

)

60

45

30

15

0

holes

Curr

ent (120583

A)

16

12

8

4

0

(e1)

(e2)







Acrylic sheet

Cu film

Mass loading


(a)

Out

put v

olta

ge (V

)

120

100

80

60

40

20

0

120 140 160100806040200

minus20

minus40

Time (s)

(b)

Out

put c

urre

nt (120583

A)

15

10

5

0

minus5

minus10

Time (s)0 50 100 150 200

(c)

CuAlPET

PTFEAcrylic

(d) (e) (f)

Curr

ent (120583

A)

320

240

160

80

0

Time (s)0 10 20 30 40 50

n = 1

n = 2

n = 3

n = 4

(g)

Accu

mul

ativ

e cha

rge (120583

C) 25

20

15

10

5

0

Time (s)0 2 4 6 8

n = 4

n = 3

n = 2

n = 1

(h)

Max

imum

pea

k po

wer

(mW

)

70

60

50

40

30

20

10

0


(i)






6 Conclusions




Competing Interests


Acknowledgments


References







































































































CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




500nm

3 cm

(a)

(d) (e)

(f) (g)

(h)

200

150

100

50

0

Voc

(V)

200

150

100

50

0

Voc

(V)

0 1

18 19

2 3 4 5

T (s)

T (s)

200

150

100

50

0

200

150

100

50

0

0 1 2 3 4 5

T (s)

19 20

T (s)

minus50

minus50I sc

(120583A

) I sc

(120583A

)

T (s)

1500

1000

500

0

150

200

250

300

I sc

peak

(120583A

)

I sc

peak

(120583A

)

0

10 20 30 40 50

100 200 300 400 500 600

F (N)

042

040

038

036Inst

anta

neou

s pow

er (W

)

04 06 08 10 12 14 16

R (MΩ)

12000

11429

10857

10286Po

wer

den

sity

(Wm

2)

W = I2peakR



PMMAPVCCu

AlPET

(a)

Resistor (Ω)108104 105 106 107

Volta

ge (V

)

800

600

400

200

0

Curr

ent (120583

A)

120

90

60

30

0

(b)

Resistor (Ω)108104 105 106 107

Pow

er (m

W)

25

20

15

10

5

0

(c)

J sc

(mA

m2)

6

4

2

0

minus2

minus4J s

c(m

Am

2)

6

4

2

0

minus2

minus4

minus6

Cycle0 200 400 600 800 1000

Initial



cycles cycles


(d)





119873total = 21198992 (3)



AluminumPET

PTFECopper

n = 1 n = 2 n = 3

(a)

Enha

ncem

ent f

acto

r120572

20

16

12

8

4

0

n

0 1 2 3

120572 = 2n2

120572 = 1663n2

(b)

n = 1

n = 2

n = 3

Accu

mul

ativ

e cha

rge (120583

C)150

100

50

0

Time (s)00 05 10 15 20 25 30

(c)

Curr

ent (120583

A)

1200

900

600

300

0

Volta

ge (V

)

400

300

200

100

0

Resistance (Ω)108103 104 105 106 107

(d)

n = 1

n = 2

n = 3

Pow

er (W

) Pow

er (W

)

15

10

05

00

0020

0015

0010

0005

0000

Resistance (Ω)108103 104 105 106 107

Resistance (Ω)108103 104 105 106 107

(e)



AcrylicPTFESpring

CuAl

(a)

I sc

(120583A

)

1200

900

600

300

n

1 2 3 4 5

Voc

(V)

400

300

200

100

0

(b)

I sc

(120583A

)

1200

900

600

300

ΔS (cm2)10 20 30 40 50 60 70

(c)

Resistance (Ω)108103 104 105 106 107

Pow

er d

ensit

y (W

m2)

120

80

40

0

(d)





119873 = 4119899 (4)




Copper electrodes

(a)

Pow

er d

ensit

y (W

m2)

04

03

02

01


(b)

Effici

ency

()

60

50

40

30

20

10

0

Resistance (MΩ)0 500 1000 1500 2000

(c)

Nor

mal

ized

fric

tion

coeffi

cien

t 12

10

08

06

04

02

00Steel rod


(d) (e)







CopperFEP

GoldAcrylic

(a)

Shor

t-circ

uit c

urre

nt (m

A) 06

04

02

00

minus02

minus04

minus06

Time (ms)0 5 10 15 20

(b)

Time (ms)0 5 10 15 20

Ope

n-ci

rcui

t vol

tage

(V)

500

250

0

minus250

minus500

(c)

Mat

ched

load

(MΩ

)

30

25

20

15

10

5

0


250

200

150

100

50

0

(d)

(e)






Resistance (Ω)102101 103 104 105 106 107

Resistance (Ω)102101 103 104 105 106 107

FloatingS

S

N

N

Coi

l

Coi

l

Repulsive force

Fixe

d

Fixe

d

Slid

ing

Acrylic sheetCu


(a) (b)

(d) (e) (f)

(g)

(c)

Out

put p

ower

(mW

)

Out

put p

ower

(mW

)20

15

10

05

00

8

6

4

2

0O

utpu

t vol

tage

40

35

30

25

20

15

10

05

00

minus05

t3

t3

t2

t2

t1

t1

EMIGTENG

Hybrid cell

EMIGTENGHybrid cell

Total

84 s68 s42 s

42 s35 s29 s

46 s37 s31 s

172 s14 s102 s

Time (s)0 5 10 15 20 25 30

Acrylic sheetCu


S-TENG 1 S-TENG 2

Hybridcell

Powermanagement

circuit

A

B

AND gate

XOR gate

LED

LED

C

S







TENG Solar cell

V

(a) (b)

(c)

(d)

(e) (f) (g)

Volta

ge (V

) 0806040200

Time (s)0 50 100 150 200

Volta

ge (V

) 252015100500

0 2 4 6 8 10

Time (s)0 50 100 150 200

Volta

ge (V

)

3

2

1

0

Solar cell


Charging

VoltageCurrent

Volta

ge (V

)4

3

2

1

0

Time (s)0 1000 2000 3000 4000 5000

Curr

ent (

mA

)

12

6

0

minus6

minus12

Charging

Volta

ge (V

)

36

33

30

27

24

Time (h)

Time (h)

0 2 4 6 8 10









5 Applications








IronAcrylicCopper

PTFEAluminum

z

xy

(a)

(d) (e) (f)

(g) (h) (i)

(b)

(c)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V) 150

100

50

0

150

100

50

0

Time (s)

Time (s) Time (s)

1 11 12 13 14

Time (s)

108 11

I II III VI

I II IIIVI

minus50

minus50102 104

1 11 12 13 14

150

120

90

60

30

0

Frequency (Hz)10 36 62 88 114 140

Shor

t-circ

uit c

urre

nt (120583

A)30

24

18

12

6

0

75Hz

26Hz 101Hz

Volta

ge (V

)

100

50

0

minus50

minus100

Time (s)0 10 20 30 40 50

1 cm 2 cm 3 cm 4 cm






KaptonPTFE

Aluminum

(a)

(b) (c)

(d) (e)

(f)

(g) (h)

Max

imum

Voc

(V)

Max

imum

Voc

(V)

250

200

150

100

50

Impact force (N)100 200 300 400 500

Max

imum

I sc

(120583A

)

Max

imum

I sc

(120583A

)

700

600

500

400

300

200

100

300

200

100


0

600

400

200

02 4 6 8 10







PTFECu

Paper

Pow

er (W

m2)

012

008

004

000

Resistance (Ω)102 103 104 105 106 107 108

Resistance (Ω)100 102 104 106 108

Resistance (Ω)100 102 104 106 108

Volta

ge (V

)16

12

08

04

Time (s)

(a) (b) (c)

(d) (e) (f)

(g) (h) (i)

5 10 15

Pow

er d

ensit

y (W

m2)

0075

0060

0045

0030

0015

0000

Volta

ge (V

) 02

001

minus01minus02

Time (s)0 05 1 15 2 25 3 35

Time (s)0

005 1 15 2 25 3 35

4000

2000

Freq

uenc

y(H

z)

AcrylicPETPTFE

CopperAluminum

Pin

PcavityAcoustic

200nm 5120583m

Volta

ge (V

)

60

45

30

15

0

holes

Curr

ent (120583

A)

16

12

8

4

0

(e1)

(e2)







Acrylic sheet

Cu film

Mass loading


(a)

Out

put v

olta

ge (V

)

120

100

80

60

40

20

0

120 140 160100806040200

minus20

minus40

Time (s)

(b)

Out

put c

urre

nt (120583

A)

15

10

5

0

minus5

minus10

Time (s)0 50 100 150 200

(c)

CuAlPET

PTFEAcrylic

(d) (e) (f)

Curr

ent (120583

A)

320

240

160

80

0

Time (s)0 10 20 30 40 50

n = 1

n = 2

n = 3

n = 4

(g)

Accu

mul

ativ

e cha

rge (120583

C) 25

20

15

10

5

0

Time (s)0 2 4 6 8

n = 4

n = 3

n = 2

n = 1

(h)

Max

imum

pea

k po

wer

(mW

)

70

60

50

40

30

20

10

0


(i)






6 Conclusions




Competing Interests


Acknowledgments


References







































































































CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




PMMAPVCCu

AlPET

(a)

Resistor (Ω)108104 105 106 107

Volta

ge (V

)

800

600

400

200

0

Curr

ent (120583

A)

120

90

60

30

0

(b)

Resistor (Ω)108104 105 106 107

Pow

er (m

W)

25

20

15

10

5

0

(c)

J sc

(mA

m2)

6

4

2

0

minus2

minus4J s

c(m

Am

2)

6

4

2

0

minus2

minus4

minus6

Cycle0 200 400 600 800 1000

Initial



cycles cycles


(d)





119873total = 21198992 (3)



AluminumPET

PTFECopper

n = 1 n = 2 n = 3

(a)

Enha

ncem

ent f

acto

r120572

20

16

12

8

4

0

n

0 1 2 3

120572 = 2n2

120572 = 1663n2

(b)

n = 1

n = 2

n = 3

Accu

mul

ativ

e cha

rge (120583

C)150

100

50

0

Time (s)00 05 10 15 20 25 30

(c)

Curr

ent (120583

A)

1200

900

600

300

0

Volta

ge (V

)

400

300

200

100

0

Resistance (Ω)108103 104 105 106 107

(d)

n = 1

n = 2

n = 3

Pow

er (W

) Pow

er (W

)

15

10

05

00

0020

0015

0010

0005

0000

Resistance (Ω)108103 104 105 106 107

Resistance (Ω)108103 104 105 106 107

(e)



AcrylicPTFESpring

CuAl

(a)

I sc

(120583A

)

1200

900

600

300

n

1 2 3 4 5

Voc

(V)

400

300

200

100

0

(b)

I sc

(120583A

)

1200

900

600

300

ΔS (cm2)10 20 30 40 50 60 70

(c)

Resistance (Ω)108103 104 105 106 107

Pow

er d

ensit

y (W

m2)

120

80

40

0

(d)





119873 = 4119899 (4)




Copper electrodes

(a)

Pow

er d

ensit

y (W

m2)

04

03

02

01


(b)

Effici

ency

()

60

50

40

30

20

10

0

Resistance (MΩ)0 500 1000 1500 2000

(c)

Nor

mal

ized

fric

tion

coeffi

cien

t 12

10

08

06

04

02

00Steel rod


(d) (e)







CopperFEP

GoldAcrylic

(a)

Shor

t-circ

uit c

urre

nt (m

A) 06

04

02

00

minus02

minus04

minus06

Time (ms)0 5 10 15 20

(b)

Time (ms)0 5 10 15 20

Ope

n-ci

rcui

t vol

tage

(V)

500

250

0

minus250

minus500

(c)

Mat

ched

load

(MΩ

)

30

25

20

15

10

5

0


250

200

150

100

50

0

(d)

(e)






Resistance (Ω)102101 103 104 105 106 107

Resistance (Ω)102101 103 104 105 106 107

FloatingS

S

N

N

Coi

l

Coi

l

Repulsive force

Fixe

d

Fixe

d

Slid

ing

Acrylic sheetCu


(a) (b)

(d) (e) (f)

(g)

(c)

Out

put p

ower

(mW

)

Out

put p

ower

(mW

)20

15

10

05

00

8

6

4

2

0O

utpu

t vol

tage

40

35

30

25

20

15

10

05

00

minus05

t3

t3

t2

t2

t1

t1

EMIGTENG

Hybrid cell

EMIGTENGHybrid cell

Total

84 s68 s42 s

42 s35 s29 s

46 s37 s31 s

172 s14 s102 s

Time (s)0 5 10 15 20 25 30

Acrylic sheetCu


S-TENG 1 S-TENG 2

Hybridcell

Powermanagement

circuit

A

B

AND gate

XOR gate

LED

LED

C

S







TENG Solar cell

V

(a) (b)

(c)

(d)

(e) (f) (g)

Volta

ge (V

) 0806040200

Time (s)0 50 100 150 200

Volta

ge (V

) 252015100500

0 2 4 6 8 10

Time (s)0 50 100 150 200

Volta

ge (V

)

3

2

1

0

Solar cell


Charging

VoltageCurrent

Volta

ge (V

)4

3

2

1

0

Time (s)0 1000 2000 3000 4000 5000

Curr

ent (

mA

)

12

6

0

minus6

minus12

Charging

Volta

ge (V

)

36

33

30

27

24

Time (h)

Time (h)

0 2 4 6 8 10









5 Applications








IronAcrylicCopper

PTFEAluminum

z

xy

(a)

(d) (e) (f)

(g) (h) (i)

(b)

(c)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V) 150

100

50

0

150

100

50

0

Time (s)

Time (s) Time (s)

1 11 12 13 14

Time (s)

108 11

I II III VI

I II IIIVI

minus50

minus50102 104

1 11 12 13 14

150

120

90

60

30

0

Frequency (Hz)10 36 62 88 114 140

Shor

t-circ

uit c

urre

nt (120583

A)30

24

18

12

6

0

75Hz

26Hz 101Hz

Volta

ge (V

)

100

50

0

minus50

minus100

Time (s)0 10 20 30 40 50

1 cm 2 cm 3 cm 4 cm






KaptonPTFE

Aluminum

(a)

(b) (c)

(d) (e)

(f)

(g) (h)

Max

imum

Voc

(V)

Max

imum

Voc

(V)

250

200

150

100

50

Impact force (N)100 200 300 400 500

Max

imum

I sc

(120583A

)

Max

imum

I sc

(120583A

)

700

600

500

400

300

200

100

300

200

100


0

600

400

200

02 4 6 8 10







PTFECu

Paper

Pow

er (W

m2)

012

008

004

000

Resistance (Ω)102 103 104 105 106 107 108

Resistance (Ω)100 102 104 106 108

Resistance (Ω)100 102 104 106 108

Volta

ge (V

)16

12

08

04

Time (s)

(a) (b) (c)

(d) (e) (f)

(g) (h) (i)

5 10 15

Pow

er d

ensit

y (W

m2)

0075

0060

0045

0030

0015

0000

Volta

ge (V

) 02

001

minus01minus02

Time (s)0 05 1 15 2 25 3 35

Time (s)0

005 1 15 2 25 3 35

4000

2000

Freq

uenc

y(H

z)

AcrylicPETPTFE

CopperAluminum

Pin

PcavityAcoustic

200nm 5120583m

Volta

ge (V

)

60

45

30

15

0

holes

Curr

ent (120583

A)

16

12

8

4

0

(e1)

(e2)







Acrylic sheet

Cu film

Mass loading


(a)

Out

put v

olta

ge (V

)

120

100

80

60

40

20

0

120 140 160100806040200

minus20

minus40

Time (s)

(b)

Out

put c

urre

nt (120583

A)

15

10

5

0

minus5

minus10

Time (s)0 50 100 150 200

(c)

CuAlPET

PTFEAcrylic

(d) (e) (f)

Curr

ent (120583

A)

320

240

160

80

0

Time (s)0 10 20 30 40 50

n = 1

n = 2

n = 3

n = 4

(g)

Accu

mul

ativ

e cha

rge (120583

C) 25

20

15

10

5

0

Time (s)0 2 4 6 8

n = 4

n = 3

n = 2

n = 1

(h)

Max

imum

pea

k po

wer

(mW

)

70

60

50

40

30

20

10

0


(i)






6 Conclusions




Competing Interests


Acknowledgments


References







































































































CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




AluminumPET

PTFECopper

n = 1 n = 2 n = 3

(a)

Enha

ncem

ent f

acto

r120572

20

16

12

8

4

0

n

0 1 2 3

120572 = 2n2

120572 = 1663n2

(b)

n = 1

n = 2

n = 3

Accu

mul

ativ

e cha

rge (120583

C)150

100

50

0

Time (s)00 05 10 15 20 25 30

(c)

Curr

ent (120583

A)

1200

900

600

300

0

Volta

ge (V

)

400

300

200

100

0

Resistance (Ω)108103 104 105 106 107

(d)

n = 1

n = 2

n = 3

Pow

er (W

) Pow

er (W

)

15

10

05

00

0020

0015

0010

0005

0000

Resistance (Ω)108103 104 105 106 107

Resistance (Ω)108103 104 105 106 107

(e)



AcrylicPTFESpring

CuAl

(a)

I sc

(120583A

)

1200

900

600

300

n

1 2 3 4 5

Voc

(V)

400

300

200

100

0

(b)

I sc

(120583A

)

1200

900

600

300

ΔS (cm2)10 20 30 40 50 60 70

(c)

Resistance (Ω)108103 104 105 106 107

Pow

er d

ensit

y (W

m2)

120

80

40

0

(d)





119873 = 4119899 (4)




Copper electrodes

(a)

Pow

er d

ensit

y (W

m2)

04

03

02

01


(b)

Effici

ency

()

60

50

40

30

20

10

0

Resistance (MΩ)0 500 1000 1500 2000

(c)

Nor

mal

ized

fric

tion

coeffi

cien

t 12

10

08

06

04

02

00Steel rod


(d) (e)







CopperFEP

GoldAcrylic

(a)

Shor

t-circ

uit c

urre

nt (m

A) 06

04

02

00

minus02

minus04

minus06

Time (ms)0 5 10 15 20

(b)

Time (ms)0 5 10 15 20

Ope

n-ci

rcui

t vol

tage

(V)

500

250

0

minus250

minus500

(c)

Mat

ched

load

(MΩ

)

30

25

20

15

10

5

0


250

200

150

100

50

0

(d)

(e)






Resistance (Ω)102101 103 104 105 106 107

Resistance (Ω)102101 103 104 105 106 107

FloatingS

S

N

N

Coi

l

Coi

l

Repulsive force

Fixe

d

Fixe

d

Slid

ing

Acrylic sheetCu


(a) (b)

(d) (e) (f)

(g)

(c)

Out

put p

ower

(mW

)

Out

put p

ower

(mW

)20

15

10

05

00

8

6

4

2

0O

utpu

t vol

tage

40

35

30

25

20

15

10

05

00

minus05

t3

t3

t2

t2

t1

t1

EMIGTENG

Hybrid cell

EMIGTENGHybrid cell

Total

84 s68 s42 s

42 s35 s29 s

46 s37 s31 s

172 s14 s102 s

Time (s)0 5 10 15 20 25 30

Acrylic sheetCu


S-TENG 1 S-TENG 2

Hybridcell

Powermanagement

circuit

A

B

AND gate

XOR gate

LED

LED

C

S







TENG Solar cell

V

(a) (b)

(c)

(d)

(e) (f) (g)

Volta

ge (V

) 0806040200

Time (s)0 50 100 150 200

Volta

ge (V

) 252015100500

0 2 4 6 8 10

Time (s)0 50 100 150 200

Volta

ge (V

)

3

2

1

0

Solar cell


Charging

VoltageCurrent

Volta

ge (V

)4

3

2

1

0

Time (s)0 1000 2000 3000 4000 5000

Curr

ent (

mA

)

12

6

0

minus6

minus12

Charging

Volta

ge (V

)

36

33

30

27

24

Time (h)

Time (h)

0 2 4 6 8 10









5 Applications








IronAcrylicCopper

PTFEAluminum

z

xy

(a)

(d) (e) (f)

(g) (h) (i)

(b)

(c)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V) 150

100

50

0

150

100

50

0

Time (s)

Time (s) Time (s)

1 11 12 13 14

Time (s)

108 11

I II III VI

I II IIIVI

minus50

minus50102 104

1 11 12 13 14

150

120

90

60

30

0

Frequency (Hz)10 36 62 88 114 140

Shor

t-circ

uit c

urre

nt (120583

A)30

24

18

12

6

0

75Hz

26Hz 101Hz

Volta

ge (V

)

100

50

0

minus50

minus100

Time (s)0 10 20 30 40 50

1 cm 2 cm 3 cm 4 cm






KaptonPTFE

Aluminum

(a)

(b) (c)

(d) (e)

(f)

(g) (h)

Max

imum

Voc

(V)

Max

imum

Voc

(V)

250

200

150

100

50

Impact force (N)100 200 300 400 500

Max

imum

I sc

(120583A

)

Max

imum

I sc

(120583A

)

700

600

500

400

300

200

100

300

200

100


0

600

400

200

02 4 6 8 10







PTFECu

Paper

Pow

er (W

m2)

012

008

004

000

Resistance (Ω)102 103 104 105 106 107 108

Resistance (Ω)100 102 104 106 108

Resistance (Ω)100 102 104 106 108

Volta

ge (V

)16

12

08

04

Time (s)

(a) (b) (c)

(d) (e) (f)

(g) (h) (i)

5 10 15

Pow

er d

ensit

y (W

m2)

0075

0060

0045

0030

0015

0000

Volta

ge (V

) 02

001

minus01minus02

Time (s)0 05 1 15 2 25 3 35

Time (s)0

005 1 15 2 25 3 35

4000

2000

Freq

uenc

y(H

z)

AcrylicPETPTFE

CopperAluminum

Pin

PcavityAcoustic

200nm 5120583m

Volta

ge (V

)

60

45

30

15

0

holes

Curr

ent (120583

A)

16

12

8

4

0

(e1)

(e2)







Acrylic sheet

Cu film

Mass loading


(a)

Out

put v

olta

ge (V

)

120

100

80

60

40

20

0

120 140 160100806040200

minus20

minus40

Time (s)

(b)

Out

put c

urre

nt (120583

A)

15

10

5

0

minus5

minus10

Time (s)0 50 100 150 200

(c)

CuAlPET

PTFEAcrylic

(d) (e) (f)

Curr

ent (120583

A)

320

240

160

80

0

Time (s)0 10 20 30 40 50

n = 1

n = 2

n = 3

n = 4

(g)

Accu

mul

ativ

e cha

rge (120583

C) 25

20

15

10

5

0

Time (s)0 2 4 6 8

n = 4

n = 3

n = 2

n = 1

(h)

Max

imum

pea

k po

wer

(mW

)

70

60

50

40

30

20

10

0


(i)






6 Conclusions




Competing Interests


Acknowledgments


References







































































































CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




AcrylicPTFESpring

CuAl

(a)

I sc

(120583A

)

1200

900

600

300

n

1 2 3 4 5

Voc

(V)

400

300

200

100

0

(b)

I sc

(120583A

)

1200

900

600

300

ΔS (cm2)10 20 30 40 50 60 70

(c)

Resistance (Ω)108103 104 105 106 107

Pow

er d

ensit

y (W

m2)

120

80

40

0

(d)





119873 = 4119899 (4)




Copper electrodes

(a)

Pow

er d

ensit

y (W

m2)

04

03

02

01


(b)

Effici

ency

()

60

50

40

30

20

10

0

Resistance (MΩ)0 500 1000 1500 2000

(c)

Nor

mal

ized

fric

tion

coeffi

cien

t 12

10

08

06

04

02

00Steel rod


(d) (e)







CopperFEP

GoldAcrylic

(a)

Shor

t-circ

uit c

urre

nt (m

A) 06

04

02

00

minus02

minus04

minus06

Time (ms)0 5 10 15 20

(b)

Time (ms)0 5 10 15 20

Ope

n-ci

rcui

t vol

tage

(V)

500

250

0

minus250

minus500

(c)

Mat

ched

load

(MΩ

)

30

25

20

15

10

5

0


250

200

150

100

50

0

(d)

(e)






Resistance (Ω)102101 103 104 105 106 107

Resistance (Ω)102101 103 104 105 106 107

FloatingS

S

N

N

Coi

l

Coi

l

Repulsive force

Fixe

d

Fixe

d

Slid

ing

Acrylic sheetCu


(a) (b)

(d) (e) (f)

(g)

(c)

Out

put p

ower

(mW

)

Out

put p

ower

(mW

)20

15

10

05

00

8

6

4

2

0O

utpu

t vol

tage

40

35

30

25

20

15

10

05

00

minus05

t3

t3

t2

t2

t1

t1

EMIGTENG

Hybrid cell

EMIGTENGHybrid cell

Total

84 s68 s42 s

42 s35 s29 s

46 s37 s31 s

172 s14 s102 s

Time (s)0 5 10 15 20 25 30

Acrylic sheetCu


S-TENG 1 S-TENG 2

Hybridcell

Powermanagement

circuit

A

B

AND gate

XOR gate

LED

LED

C

S







TENG Solar cell

V

(a) (b)

(c)

(d)

(e) (f) (g)

Volta

ge (V

) 0806040200

Time (s)0 50 100 150 200

Volta

ge (V

) 252015100500

0 2 4 6 8 10

Time (s)0 50 100 150 200

Volta

ge (V

)

3

2

1

0

Solar cell


Charging

VoltageCurrent

Volta

ge (V

)4

3

2

1

0

Time (s)0 1000 2000 3000 4000 5000

Curr

ent (

mA

)

12

6

0

minus6

minus12

Charging

Volta

ge (V

)

36

33

30

27

24

Time (h)

Time (h)

0 2 4 6 8 10









5 Applications








IronAcrylicCopper

PTFEAluminum

z

xy

(a)

(d) (e) (f)

(g) (h) (i)

(b)

(c)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V) 150

100

50

0

150

100

50

0

Time (s)

Time (s) Time (s)

1 11 12 13 14

Time (s)

108 11

I II III VI

I II IIIVI

minus50

minus50102 104

1 11 12 13 14

150

120

90

60

30

0

Frequency (Hz)10 36 62 88 114 140

Shor

t-circ

uit c

urre

nt (120583

A)30

24

18

12

6

0

75Hz

26Hz 101Hz

Volta

ge (V

)

100

50

0

minus50

minus100

Time (s)0 10 20 30 40 50

1 cm 2 cm 3 cm 4 cm






KaptonPTFE

Aluminum

(a)

(b) (c)

(d) (e)

(f)

(g) (h)

Max

imum

Voc

(V)

Max

imum

Voc

(V)

250

200

150

100

50

Impact force (N)100 200 300 400 500

Max

imum

I sc

(120583A

)

Max

imum

I sc

(120583A

)

700

600

500

400

300

200

100

300

200

100


0

600

400

200

02 4 6 8 10







PTFECu

Paper

Pow

er (W

m2)

012

008

004

000

Resistance (Ω)102 103 104 105 106 107 108

Resistance (Ω)100 102 104 106 108

Resistance (Ω)100 102 104 106 108

Volta

ge (V

)16

12

08

04

Time (s)

(a) (b) (c)

(d) (e) (f)

(g) (h) (i)

5 10 15

Pow

er d

ensit

y (W

m2)

0075

0060

0045

0030

0015

0000

Volta

ge (V

) 02

001

minus01minus02

Time (s)0 05 1 15 2 25 3 35

Time (s)0

005 1 15 2 25 3 35

4000

2000

Freq

uenc

y(H

z)

AcrylicPETPTFE

CopperAluminum

Pin

PcavityAcoustic

200nm 5120583m

Volta

ge (V

)

60

45

30

15

0

holes

Curr

ent (120583

A)

16

12

8

4

0

(e1)

(e2)







Acrylic sheet

Cu film

Mass loading


(a)

Out

put v

olta

ge (V

)

120

100

80

60

40

20

0

120 140 160100806040200

minus20

minus40

Time (s)

(b)

Out

put c

urre

nt (120583

A)

15

10

5

0

minus5

minus10

Time (s)0 50 100 150 200

(c)

CuAlPET

PTFEAcrylic

(d) (e) (f)

Curr

ent (120583

A)

320

240

160

80

0

Time (s)0 10 20 30 40 50

n = 1

n = 2

n = 3

n = 4

(g)

Accu

mul

ativ

e cha

rge (120583

C) 25

20

15

10

5

0

Time (s)0 2 4 6 8

n = 4

n = 3

n = 2

n = 1

(h)

Max

imum

pea

k po

wer

(mW

)

70

60

50

40

30

20

10

0


(i)






6 Conclusions




Competing Interests


Acknowledgments


References







































































































CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials





Copper electrodes

(a)

Pow

er d

ensit

y (W

m2)

04

03

02

01


(b)

Effici

ency

()

60

50

40

30

20

10

0

Resistance (MΩ)0 500 1000 1500 2000

(c)

Nor

mal

ized

fric

tion

coeffi

cien

t 12

10

08

06

04

02

00Steel rod


(d) (e)







CopperFEP

GoldAcrylic

(a)

Shor

t-circ

uit c

urre

nt (m

A) 06

04

02

00

minus02

minus04

minus06

Time (ms)0 5 10 15 20

(b)

Time (ms)0 5 10 15 20

Ope

n-ci

rcui

t vol

tage

(V)

500

250

0

minus250

minus500

(c)

Mat

ched

load

(MΩ

)

30

25

20

15

10

5

0


250

200

150

100

50

0

(d)

(e)






Resistance (Ω)102101 103 104 105 106 107

Resistance (Ω)102101 103 104 105 106 107

FloatingS

S

N

N

Coi

l

Coi

l

Repulsive force

Fixe

d

Fixe

d

Slid

ing

Acrylic sheetCu


(a) (b)

(d) (e) (f)

(g)

(c)

Out

put p

ower

(mW

)

Out

put p

ower

(mW

)20

15

10

05

00

8

6

4

2

0O

utpu

t vol

tage

40

35

30

25

20

15

10

05

00

minus05

t3

t3

t2

t2

t1

t1

EMIGTENG

Hybrid cell

EMIGTENGHybrid cell

Total

84 s68 s42 s

42 s35 s29 s

46 s37 s31 s

172 s14 s102 s

Time (s)0 5 10 15 20 25 30

Acrylic sheetCu


S-TENG 1 S-TENG 2

Hybridcell

Powermanagement

circuit

A

B

AND gate

XOR gate

LED

LED

C

S







TENG Solar cell

V

(a) (b)

(c)

(d)

(e) (f) (g)

Volta

ge (V

) 0806040200

Time (s)0 50 100 150 200

Volta

ge (V

) 252015100500

0 2 4 6 8 10

Time (s)0 50 100 150 200

Volta

ge (V

)

3

2

1

0

Solar cell


Charging

VoltageCurrent

Volta

ge (V

)4

3

2

1

0

Time (s)0 1000 2000 3000 4000 5000

Curr

ent (

mA

)

12

6

0

minus6

minus12

Charging

Volta

ge (V

)

36

33

30

27

24

Time (h)

Time (h)

0 2 4 6 8 10









5 Applications








IronAcrylicCopper

PTFEAluminum

z

xy

(a)

(d) (e) (f)

(g) (h) (i)

(b)

(c)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V) 150

100

50

0

150

100

50

0

Time (s)

Time (s) Time (s)

1 11 12 13 14

Time (s)

108 11

I II III VI

I II IIIVI

minus50

minus50102 104

1 11 12 13 14

150

120

90

60

30

0

Frequency (Hz)10 36 62 88 114 140

Shor

t-circ

uit c

urre

nt (120583

A)30

24

18

12

6

0

75Hz

26Hz 101Hz

Volta

ge (V

)

100

50

0

minus50

minus100

Time (s)0 10 20 30 40 50

1 cm 2 cm 3 cm 4 cm






KaptonPTFE

Aluminum

(a)

(b) (c)

(d) (e)

(f)

(g) (h)

Max

imum

Voc

(V)

Max

imum

Voc

(V)

250

200

150

100

50

Impact force (N)100 200 300 400 500

Max

imum

I sc

(120583A

)

Max

imum

I sc

(120583A

)

700

600

500

400

300

200

100

300

200

100


0

600

400

200

02 4 6 8 10







PTFECu

Paper

Pow

er (W

m2)

012

008

004

000

Resistance (Ω)102 103 104 105 106 107 108

Resistance (Ω)100 102 104 106 108

Resistance (Ω)100 102 104 106 108

Volta

ge (V

)16

12

08

04

Time (s)

(a) (b) (c)

(d) (e) (f)

(g) (h) (i)

5 10 15

Pow

er d

ensit

y (W

m2)

0075

0060

0045

0030

0015

0000

Volta

ge (V

) 02

001

minus01minus02

Time (s)0 05 1 15 2 25 3 35

Time (s)0

005 1 15 2 25 3 35

4000

2000

Freq

uenc

y(H

z)

AcrylicPETPTFE

CopperAluminum

Pin

PcavityAcoustic

200nm 5120583m

Volta

ge (V

)

60

45

30

15

0

holes

Curr

ent (120583

A)

16

12

8

4

0

(e1)

(e2)







Acrylic sheet

Cu film

Mass loading


(a)

Out

put v

olta

ge (V

)

120

100

80

60

40

20

0

120 140 160100806040200

minus20

minus40

Time (s)

(b)

Out

put c

urre

nt (120583

A)

15

10

5

0

minus5

minus10

Time (s)0 50 100 150 200

(c)

CuAlPET

PTFEAcrylic

(d) (e) (f)

Curr

ent (120583

A)

320

240

160

80

0

Time (s)0 10 20 30 40 50

n = 1

n = 2

n = 3

n = 4

(g)

Accu

mul

ativ

e cha

rge (120583

C) 25

20

15

10

5

0

Time (s)0 2 4 6 8

n = 4

n = 3

n = 2

n = 1

(h)

Max

imum

pea

k po

wer

(mW

)

70

60

50

40

30

20

10

0


(i)






6 Conclusions




Competing Interests


Acknowledgments


References







































































































CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




CopperFEP

GoldAcrylic

(a)

Shor

t-circ

uit c

urre

nt (m

A) 06

04

02

00

minus02

minus04

minus06

Time (ms)0 5 10 15 20

(b)

Time (ms)0 5 10 15 20

Ope

n-ci

rcui

t vol

tage

(V)

500

250

0

minus250

minus500

(c)

Mat

ched

load

(MΩ

)

30

25

20

15

10

5

0


250

200

150

100

50

0

(d)

(e)






Resistance (Ω)102101 103 104 105 106 107

Resistance (Ω)102101 103 104 105 106 107

FloatingS

S

N

N

Coi

l

Coi

l

Repulsive force

Fixe

d

Fixe

d

Slid

ing

Acrylic sheetCu


(a) (b)

(d) (e) (f)

(g)

(c)

Out

put p

ower

(mW

)

Out

put p

ower

(mW

)20

15

10

05

00

8

6

4

2

0O

utpu

t vol

tage

40

35

30

25

20

15

10

05

00

minus05

t3

t3

t2

t2

t1

t1

EMIGTENG

Hybrid cell

EMIGTENGHybrid cell

Total

84 s68 s42 s

42 s35 s29 s

46 s37 s31 s

172 s14 s102 s

Time (s)0 5 10 15 20 25 30

Acrylic sheetCu


S-TENG 1 S-TENG 2

Hybridcell

Powermanagement

circuit

A

B

AND gate

XOR gate

LED

LED

C

S







TENG Solar cell

V

(a) (b)

(c)

(d)

(e) (f) (g)

Volta

ge (V

) 0806040200

Time (s)0 50 100 150 200

Volta

ge (V

) 252015100500

0 2 4 6 8 10

Time (s)0 50 100 150 200

Volta

ge (V

)

3

2

1

0

Solar cell


Charging

VoltageCurrent

Volta

ge (V

)4

3

2

1

0

Time (s)0 1000 2000 3000 4000 5000

Curr

ent (

mA

)

12

6

0

minus6

minus12

Charging

Volta

ge (V

)

36

33

30

27

24

Time (h)

Time (h)

0 2 4 6 8 10









5 Applications








IronAcrylicCopper

PTFEAluminum

z

xy

(a)

(d) (e) (f)

(g) (h) (i)

(b)

(c)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V) 150

100

50

0

150

100

50

0

Time (s)

Time (s) Time (s)

1 11 12 13 14

Time (s)

108 11

I II III VI

I II IIIVI

minus50

minus50102 104

1 11 12 13 14

150

120

90

60

30

0

Frequency (Hz)10 36 62 88 114 140

Shor

t-circ

uit c

urre

nt (120583

A)30

24

18

12

6

0

75Hz

26Hz 101Hz

Volta

ge (V

)

100

50

0

minus50

minus100

Time (s)0 10 20 30 40 50

1 cm 2 cm 3 cm 4 cm






KaptonPTFE

Aluminum

(a)

(b) (c)

(d) (e)

(f)

(g) (h)

Max

imum

Voc

(V)

Max

imum

Voc

(V)

250

200

150

100

50

Impact force (N)100 200 300 400 500

Max

imum

I sc

(120583A

)

Max

imum

I sc

(120583A

)

700

600

500

400

300

200

100

300

200

100


0

600

400

200

02 4 6 8 10







PTFECu

Paper

Pow

er (W

m2)

012

008

004

000

Resistance (Ω)102 103 104 105 106 107 108

Resistance (Ω)100 102 104 106 108

Resistance (Ω)100 102 104 106 108

Volta

ge (V

)16

12

08

04

Time (s)

(a) (b) (c)

(d) (e) (f)

(g) (h) (i)

5 10 15

Pow

er d

ensit

y (W

m2)

0075

0060

0045

0030

0015

0000

Volta

ge (V

) 02

001

minus01minus02

Time (s)0 05 1 15 2 25 3 35

Time (s)0

005 1 15 2 25 3 35

4000

2000

Freq

uenc

y(H

z)

AcrylicPETPTFE

CopperAluminum

Pin

PcavityAcoustic

200nm 5120583m

Volta

ge (V

)

60

45

30

15

0

holes

Curr

ent (120583

A)

16

12

8

4

0

(e1)

(e2)







Acrylic sheet

Cu film

Mass loading


(a)

Out

put v

olta

ge (V

)

120

100

80

60

40

20

0

120 140 160100806040200

minus20

minus40

Time (s)

(b)

Out

put c

urre

nt (120583

A)

15

10

5

0

minus5

minus10

Time (s)0 50 100 150 200

(c)

CuAlPET

PTFEAcrylic

(d) (e) (f)

Curr

ent (120583

A)

320

240

160

80

0

Time (s)0 10 20 30 40 50

n = 1

n = 2

n = 3

n = 4

(g)

Accu

mul

ativ

e cha

rge (120583

C) 25

20

15

10

5

0

Time (s)0 2 4 6 8

n = 4

n = 3

n = 2

n = 1

(h)

Max

imum

pea

k po

wer

(mW

)

70

60

50

40

30

20

10

0


(i)






6 Conclusions




Competing Interests


Acknowledgments


References







































































































CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




Resistance (Ω)102101 103 104 105 106 107

Resistance (Ω)102101 103 104 105 106 107

FloatingS

S

N

N

Coi

l

Coi

l

Repulsive force

Fixe

d

Fixe

d

Slid

ing

Acrylic sheetCu


(a) (b)

(d) (e) (f)

(g)

(c)

Out

put p

ower

(mW

)

Out

put p

ower

(mW

)20

15

10

05

00

8

6

4

2

0O

utpu

t vol

tage

40

35

30

25

20

15

10

05

00

minus05

t3

t3

t2

t2

t1

t1

EMIGTENG

Hybrid cell

EMIGTENGHybrid cell

Total

84 s68 s42 s

42 s35 s29 s

46 s37 s31 s

172 s14 s102 s

Time (s)0 5 10 15 20 25 30

Acrylic sheetCu


S-TENG 1 S-TENG 2

Hybridcell

Powermanagement

circuit

A

B

AND gate

XOR gate

LED

LED

C

S







TENG Solar cell

V

(a) (b)

(c)

(d)

(e) (f) (g)

Volta

ge (V

) 0806040200

Time (s)0 50 100 150 200

Volta

ge (V

) 252015100500

0 2 4 6 8 10

Time (s)0 50 100 150 200

Volta

ge (V

)

3

2

1

0

Solar cell


Charging

VoltageCurrent

Volta

ge (V

)4

3

2

1

0

Time (s)0 1000 2000 3000 4000 5000

Curr

ent (

mA

)

12

6

0

minus6

minus12

Charging

Volta

ge (V

)

36

33

30

27

24

Time (h)

Time (h)

0 2 4 6 8 10









5 Applications








IronAcrylicCopper

PTFEAluminum

z

xy

(a)

(d) (e) (f)

(g) (h) (i)

(b)

(c)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V) 150

100

50

0

150

100

50

0

Time (s)

Time (s) Time (s)

1 11 12 13 14

Time (s)

108 11

I II III VI

I II IIIVI

minus50

minus50102 104

1 11 12 13 14

150

120

90

60

30

0

Frequency (Hz)10 36 62 88 114 140

Shor

t-circ

uit c

urre

nt (120583

A)30

24

18

12

6

0

75Hz

26Hz 101Hz

Volta

ge (V

)

100

50

0

minus50

minus100

Time (s)0 10 20 30 40 50

1 cm 2 cm 3 cm 4 cm






KaptonPTFE

Aluminum

(a)

(b) (c)

(d) (e)

(f)

(g) (h)

Max

imum

Voc

(V)

Max

imum

Voc

(V)

250

200

150

100

50

Impact force (N)100 200 300 400 500

Max

imum

I sc

(120583A

)

Max

imum

I sc

(120583A

)

700

600

500

400

300

200

100

300

200

100


0

600

400

200

02 4 6 8 10







PTFECu

Paper

Pow

er (W

m2)

012

008

004

000

Resistance (Ω)102 103 104 105 106 107 108

Resistance (Ω)100 102 104 106 108

Resistance (Ω)100 102 104 106 108

Volta

ge (V

)16

12

08

04

Time (s)

(a) (b) (c)

(d) (e) (f)

(g) (h) (i)

5 10 15

Pow

er d

ensit

y (W

m2)

0075

0060

0045

0030

0015

0000

Volta

ge (V

) 02

001

minus01minus02

Time (s)0 05 1 15 2 25 3 35

Time (s)0

005 1 15 2 25 3 35

4000

2000

Freq

uenc

y(H

z)

AcrylicPETPTFE

CopperAluminum

Pin

PcavityAcoustic

200nm 5120583m

Volta

ge (V

)

60

45

30

15

0

holes

Curr

ent (120583

A)

16

12

8

4

0

(e1)

(e2)







Acrylic sheet

Cu film

Mass loading


(a)

Out

put v

olta

ge (V

)

120

100

80

60

40

20

0

120 140 160100806040200

minus20

minus40

Time (s)

(b)

Out

put c

urre

nt (120583

A)

15

10

5

0

minus5

minus10

Time (s)0 50 100 150 200

(c)

CuAlPET

PTFEAcrylic

(d) (e) (f)

Curr

ent (120583

A)

320

240

160

80

0

Time (s)0 10 20 30 40 50

n = 1

n = 2

n = 3

n = 4

(g)

Accu

mul

ativ

e cha

rge (120583

C) 25

20

15

10

5

0

Time (s)0 2 4 6 8

n = 4

n = 3

n = 2

n = 1

(h)

Max

imum

pea

k po

wer

(mW

)

70

60

50

40

30

20

10

0


(i)






6 Conclusions




Competing Interests


Acknowledgments


References







































































































CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




TENG Solar cell

V

(a) (b)

(c)

(d)

(e) (f) (g)

Volta

ge (V

) 0806040200

Time (s)0 50 100 150 200

Volta

ge (V

) 252015100500

0 2 4 6 8 10

Time (s)0 50 100 150 200

Volta

ge (V

)

3

2

1

0

Solar cell


Charging

VoltageCurrent

Volta

ge (V

)4

3

2

1

0

Time (s)0 1000 2000 3000 4000 5000

Curr

ent (

mA

)

12

6

0

minus6

minus12

Charging

Volta

ge (V

)

36

33

30

27

24

Time (h)

Time (h)

0 2 4 6 8 10









5 Applications








IronAcrylicCopper

PTFEAluminum

z

xy

(a)

(d) (e) (f)

(g) (h) (i)

(b)

(c)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V) 150

100

50

0

150

100

50

0

Time (s)

Time (s) Time (s)

1 11 12 13 14

Time (s)

108 11

I II III VI

I II IIIVI

minus50

minus50102 104

1 11 12 13 14

150

120

90

60

30

0

Frequency (Hz)10 36 62 88 114 140

Shor

t-circ

uit c

urre

nt (120583

A)30

24

18

12

6

0

75Hz

26Hz 101Hz

Volta

ge (V

)

100

50

0

minus50

minus100

Time (s)0 10 20 30 40 50

1 cm 2 cm 3 cm 4 cm






KaptonPTFE

Aluminum

(a)

(b) (c)

(d) (e)

(f)

(g) (h)

Max

imum

Voc

(V)

Max

imum

Voc

(V)

250

200

150

100

50

Impact force (N)100 200 300 400 500

Max

imum

I sc

(120583A

)

Max

imum

I sc

(120583A

)

700

600

500

400

300

200

100

300

200

100


0

600

400

200

02 4 6 8 10







PTFECu

Paper

Pow

er (W

m2)

012

008

004

000

Resistance (Ω)102 103 104 105 106 107 108

Resistance (Ω)100 102 104 106 108

Resistance (Ω)100 102 104 106 108

Volta

ge (V

)16

12

08

04

Time (s)

(a) (b) (c)

(d) (e) (f)

(g) (h) (i)

5 10 15

Pow

er d

ensit

y (W

m2)

0075

0060

0045

0030

0015

0000

Volta

ge (V

) 02

001

minus01minus02

Time (s)0 05 1 15 2 25 3 35

Time (s)0

005 1 15 2 25 3 35

4000

2000

Freq

uenc

y(H

z)

AcrylicPETPTFE

CopperAluminum

Pin

PcavityAcoustic

200nm 5120583m

Volta

ge (V

)

60

45

30

15

0

holes

Curr

ent (120583

A)

16

12

8

4

0

(e1)

(e2)







Acrylic sheet

Cu film

Mass loading


(a)

Out

put v

olta

ge (V

)

120

100

80

60

40

20

0

120 140 160100806040200

minus20

minus40

Time (s)

(b)

Out

put c

urre

nt (120583

A)

15

10

5

0

minus5

minus10

Time (s)0 50 100 150 200

(c)

CuAlPET

PTFEAcrylic

(d) (e) (f)

Curr

ent (120583

A)

320

240

160

80

0

Time (s)0 10 20 30 40 50

n = 1

n = 2

n = 3

n = 4

(g)

Accu

mul

ativ

e cha

rge (120583

C) 25

20

15

10

5

0

Time (s)0 2 4 6 8

n = 4

n = 3

n = 2

n = 1

(h)

Max

imum

pea

k po

wer

(mW

)

70

60

50

40

30

20

10

0


(i)






6 Conclusions




Competing Interests


Acknowledgments


References







































































































CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials





5 Applications








IronAcrylicCopper

PTFEAluminum

z

xy

(a)

(d) (e) (f)

(g) (h) (i)

(b)

(c)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V) 150

100

50

0

150

100

50

0

Time (s)

Time (s) Time (s)

1 11 12 13 14

Time (s)

108 11

I II III VI

I II IIIVI

minus50

minus50102 104

1 11 12 13 14

150

120

90

60

30

0

Frequency (Hz)10 36 62 88 114 140

Shor

t-circ

uit c

urre

nt (120583

A)30

24

18

12

6

0

75Hz

26Hz 101Hz

Volta

ge (V

)

100

50

0

minus50

minus100

Time (s)0 10 20 30 40 50

1 cm 2 cm 3 cm 4 cm






KaptonPTFE

Aluminum

(a)

(b) (c)

(d) (e)

(f)

(g) (h)

Max

imum

Voc

(V)

Max

imum

Voc

(V)

250

200

150

100

50

Impact force (N)100 200 300 400 500

Max

imum

I sc

(120583A

)

Max

imum

I sc

(120583A

)

700

600

500

400

300

200

100

300

200

100


0

600

400

200

02 4 6 8 10







PTFECu

Paper

Pow

er (W

m2)

012

008

004

000

Resistance (Ω)102 103 104 105 106 107 108

Resistance (Ω)100 102 104 106 108

Resistance (Ω)100 102 104 106 108

Volta

ge (V

)16

12

08

04

Time (s)

(a) (b) (c)

(d) (e) (f)

(g) (h) (i)

5 10 15

Pow

er d

ensit

y (W

m2)

0075

0060

0045

0030

0015

0000

Volta

ge (V

) 02

001

minus01minus02

Time (s)0 05 1 15 2 25 3 35

Time (s)0

005 1 15 2 25 3 35

4000

2000

Freq

uenc

y(H

z)

AcrylicPETPTFE

CopperAluminum

Pin

PcavityAcoustic

200nm 5120583m

Volta

ge (V

)

60

45

30

15

0

holes

Curr

ent (120583

A)

16

12

8

4

0

(e1)

(e2)







Acrylic sheet

Cu film

Mass loading


(a)

Out

put v

olta

ge (V

)

120

100

80

60

40

20

0

120 140 160100806040200

minus20

minus40

Time (s)

(b)

Out

put c

urre

nt (120583

A)

15

10

5

0

minus5

minus10

Time (s)0 50 100 150 200

(c)

CuAlPET

PTFEAcrylic

(d) (e) (f)

Curr

ent (120583

A)

320

240

160

80

0

Time (s)0 10 20 30 40 50

n = 1

n = 2

n = 3

n = 4

(g)

Accu

mul

ativ

e cha

rge (120583

C) 25

20

15

10

5

0

Time (s)0 2 4 6 8

n = 4

n = 3

n = 2

n = 1

(h)

Max

imum

pea

k po

wer

(mW

)

70

60

50

40

30

20

10

0


(i)






6 Conclusions




Competing Interests


Acknowledgments


References







































































































CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




IronAcrylicCopper

PTFEAluminum

z

xy

(a)

(d) (e) (f)

(g) (h) (i)

(b)

(c)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V)

150

100

50

0

Ope

n-ci

rcui

t vol

tage

(V) 150

100

50

0

150

100

50

0

Time (s)

Time (s) Time (s)

1 11 12 13 14

Time (s)

108 11

I II III VI

I II IIIVI

minus50

minus50102 104

1 11 12 13 14

150

120

90

60

30

0

Frequency (Hz)10 36 62 88 114 140

Shor

t-circ

uit c

urre

nt (120583

A)30

24

18

12

6

0

75Hz

26Hz 101Hz

Volta

ge (V

)

100

50

0

minus50

minus100

Time (s)0 10 20 30 40 50

1 cm 2 cm 3 cm 4 cm






KaptonPTFE

Aluminum

(a)

(b) (c)

(d) (e)

(f)

(g) (h)

Max

imum

Voc

(V)

Max

imum

Voc

(V)

250

200

150

100

50

Impact force (N)100 200 300 400 500

Max

imum

I sc

(120583A

)

Max

imum

I sc

(120583A

)

700

600

500

400

300

200

100

300

200

100


0

600

400

200

02 4 6 8 10







PTFECu

Paper

Pow

er (W

m2)

012

008

004

000

Resistance (Ω)102 103 104 105 106 107 108

Resistance (Ω)100 102 104 106 108

Resistance (Ω)100 102 104 106 108

Volta

ge (V

)16

12

08

04

Time (s)

(a) (b) (c)

(d) (e) (f)

(g) (h) (i)

5 10 15

Pow

er d

ensit

y (W

m2)

0075

0060

0045

0030

0015

0000

Volta

ge (V

) 02

001

minus01minus02

Time (s)0 05 1 15 2 25 3 35

Time (s)0

005 1 15 2 25 3 35

4000

2000

Freq

uenc

y(H

z)

AcrylicPETPTFE

CopperAluminum

Pin

PcavityAcoustic

200nm 5120583m

Volta

ge (V

)

60

45

30

15

0

holes

Curr

ent (120583

A)

16

12

8

4

0

(e1)

(e2)







Acrylic sheet

Cu film

Mass loading


(a)

Out

put v

olta

ge (V

)

120

100

80

60

40

20

0

120 140 160100806040200

minus20

minus40

Time (s)

(b)

Out

put c

urre

nt (120583

A)

15

10

5

0

minus5

minus10

Time (s)0 50 100 150 200

(c)

CuAlPET

PTFEAcrylic

(d) (e) (f)

Curr

ent (120583

A)

320

240

160

80

0

Time (s)0 10 20 30 40 50

n = 1

n = 2

n = 3

n = 4

(g)

Accu

mul

ativ

e cha

rge (120583

C) 25

20

15

10

5

0

Time (s)0 2 4 6 8

n = 4

n = 3

n = 2

n = 1

(h)

Max

imum

pea

k po

wer

(mW

)

70

60

50

40

30

20

10

0


(i)






6 Conclusions




Competing Interests


Acknowledgments


References







































































































CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




KaptonPTFE

Aluminum

(a)

(b) (c)

(d) (e)

(f)

(g) (h)

Max

imum

Voc

(V)

Max

imum

Voc

(V)

250

200

150

100

50

Impact force (N)100 200 300 400 500

Max

imum

I sc

(120583A

)

Max

imum

I sc

(120583A

)

700

600

500

400

300

200

100

300

200

100


0

600

400

200

02 4 6 8 10







PTFECu

Paper

Pow

er (W

m2)

012

008

004

000

Resistance (Ω)102 103 104 105 106 107 108

Resistance (Ω)100 102 104 106 108

Resistance (Ω)100 102 104 106 108

Volta

ge (V

)16

12

08

04

Time (s)

(a) (b) (c)

(d) (e) (f)

(g) (h) (i)

5 10 15

Pow

er d

ensit

y (W

m2)

0075

0060

0045

0030

0015

0000

Volta

ge (V

) 02

001

minus01minus02

Time (s)0 05 1 15 2 25 3 35

Time (s)0

005 1 15 2 25 3 35

4000

2000

Freq

uenc

y(H

z)

AcrylicPETPTFE

CopperAluminum

Pin

PcavityAcoustic

200nm 5120583m

Volta

ge (V

)

60

45

30

15

0

holes

Curr

ent (120583

A)

16

12

8

4

0

(e1)

(e2)







Acrylic sheet

Cu film

Mass loading


(a)

Out

put v

olta

ge (V

)

120

100

80

60

40

20

0

120 140 160100806040200

minus20

minus40

Time (s)

(b)

Out

put c

urre

nt (120583

A)

15

10

5

0

minus5

minus10

Time (s)0 50 100 150 200

(c)

CuAlPET

PTFEAcrylic

(d) (e) (f)

Curr

ent (120583

A)

320

240

160

80

0

Time (s)0 10 20 30 40 50

n = 1

n = 2

n = 3

n = 4

(g)

Accu

mul

ativ

e cha

rge (120583

C) 25

20

15

10

5

0

Time (s)0 2 4 6 8

n = 4

n = 3

n = 2

n = 1

(h)

Max

imum

pea

k po

wer

(mW

)

70

60

50

40

30

20

10

0


(i)






6 Conclusions




Competing Interests


Acknowledgments


References







































































































CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




PTFECu

Paper

Pow

er (W

m2)

012

008

004

000

Resistance (Ω)102 103 104 105 106 107 108

Resistance (Ω)100 102 104 106 108

Resistance (Ω)100 102 104 106 108

Volta

ge (V

)16

12

08

04

Time (s)

(a) (b) (c)

(d) (e) (f)

(g) (h) (i)

5 10 15

Pow

er d

ensit

y (W

m2)

0075

0060

0045

0030

0015

0000

Volta

ge (V

) 02

001

minus01minus02

Time (s)0 05 1 15 2 25 3 35

Time (s)0

005 1 15 2 25 3 35

4000

2000

Freq

uenc

y(H

z)

AcrylicPETPTFE

CopperAluminum

Pin

PcavityAcoustic

200nm 5120583m

Volta

ge (V

)

60

45

30

15

0

holes

Curr

ent (120583

A)

16

12

8

4

0

(e1)

(e2)







Acrylic sheet

Cu film

Mass loading


(a)

Out

put v

olta

ge (V

)

120

100

80

60

40

20

0

120 140 160100806040200

minus20

minus40

Time (s)

(b)

Out

put c

urre

nt (120583

A)

15

10

5

0

minus5

minus10

Time (s)0 50 100 150 200

(c)

CuAlPET

PTFEAcrylic

(d) (e) (f)

Curr

ent (120583

A)

320

240

160

80

0

Time (s)0 10 20 30 40 50

n = 1

n = 2

n = 3

n = 4

(g)

Accu

mul

ativ

e cha

rge (120583

C) 25

20

15

10

5

0

Time (s)0 2 4 6 8

n = 4

n = 3

n = 2

n = 1

(h)

Max

imum

pea

k po

wer

(mW

)

70

60

50

40

30

20

10

0


(i)






6 Conclusions




Competing Interests


Acknowledgments


References







































































































CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




Acrylic sheet

Cu film

Mass loading


(a)

Out

put v

olta

ge (V

)

120

100

80

60

40

20

0

120 140 160100806040200

minus20

minus40

Time (s)

(b)

Out

put c

urre

nt (120583

A)

15

10

5

0

minus5

minus10

Time (s)0 50 100 150 200

(c)

CuAlPET

PTFEAcrylic

(d) (e) (f)

Curr

ent (120583

A)

320

240

160

80

0

Time (s)0 10 20 30 40 50

n = 1

n = 2

n = 3

n = 4

(g)

Accu

mul

ativ

e cha

rge (120583

C) 25

20

15

10

5

0

Time (s)0 2 4 6 8

n = 4

n = 3

n = 2

n = 1

(h)

Max

imum

pea

k po

wer

(mW

)

70

60

50

40

30

20

10

0


(i)






6 Conclusions




Competing Interests


Acknowledgments


References







































































































CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




6 Conclusions




Competing Interests


Acknowledgments


References







































































































CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials




























































































CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials
























































CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials






















CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials










CeramicsJournal of







Biomaterials




Journal of


Journal of





CoatingsJournal of

Advances in








MaterialsJournal of


Nano

materials



Documents

Review Article Recent Progress in Triboelectric ...downloads.hindawi.com/journals/jnm/2016/5651613.pdf · sustainable development of human civilization. e famil-iar renewable energies