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1
Thesis 1
RESISTIVE SUPERCONDUCTING
FAULT CURRENT LIMITER
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Contribution of this Thesis
Simulations Simulations were carried out on the resistive
SCFCL in order better to understand its
minimise the problems facing it. Simulations
of the shielded-inductive SCFCL were also
carried out in order to aid comparisons
between it and the resistive SCFCL.
The simulations:
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Contribution of this Thesis
1. Enabled design trade-offs for the resistive SCFCLto be established on a quantitative basisbetween the length and the critical currentdensity of the superconducting film, the type ofsu s ra e ma er a , e va ue o e app evoltage per unit length across the film, and theperformance of the resistive SCFCL.
2. Enabled the impact of a shunt resistor on the
reduction of transient overvoltages in theresistive SCFCL to be evaluated.
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Contribution of this Thesis
3. Showed how the weak parts problem in the
resistive SCFCL could be reduced or eliminated by
increasing the applied voltage per unit length across
the superconducting film, by the application of an
externally magnetic field on the film from a shunt orseries connected boost coil, and by using a high
thermal conductivity substrate such as sapphire.
4. Enabled design trade-offs for the shielded-inductive
SCFCL to be formulated and comparisons to bemade between it and the resistive SCFCL.
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Contribution of this Thesis
Measurements
Measurements were carried out on a series ofsuperconducting samples under various voltagesand angles of fault occurrence. Measurements
achieved: Superconductor sample with no externally
applied magnetic field.
Superconductor sample with shunt boost coil. Superconductor sample with series boost coil.
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Contribution of this Thesis
Measurements showed that:
1. The rise in temperature of the superconductor
sample during the fault period can be decreased by
connecting a shunt coil across the sample.
2. Superconductor samples can deal with a highernumber of successive faults when using a shunt
boost coil compared with a series boost coil or no
such a coil.
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Contribution of this Thesis
3. Transient overvoltages across thesuperconductor sample are higher when a
series boost coil is used.
.
superconducting samples is more likely when
the temperature of the sample is higher than
the critical temperature.
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Sources of Losses in the ResistiveSCFCL: A Critical Review
1. Current Leads: There are two types ofcurrent leads: conventional and
superconducting current leads. There are two
namely, conduction cooled and vapour
cooled current leads.
2. Electric Contacts: The current leads are
connected to the HTSs through electriccontacts.
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Sources of Losses in the ResistiveSCFCL: A Critical Review
3. AC Losses
4. Radiation Losses.
Total Losses: minimum value of the total loss
1.372AI108.5I0.5R0.03787Iq2
csc
-62
ccct +++= l
Costs per year are: 13.63 when using super
insulation material with the bucket, 110.14when using an aluminium bucket and 192.27
when using a brass bucket.
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There is an optimum value of (I L/A) which gives the
minimum value of (QC/I) for each lead system.
Temperature
distribution
along thecurrent lead in
conduction
cooled leads
Temperature
distribution
along the
current lead in
vapour cooled
leads
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(QC/I) versus (I L/A) for both conduction cooledand vapour cooled leads
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Introduction
Behaviour of the resistive SCFCL is determined bythe parameters of the superconducting film suchas length, critical current density, and type ofsuperconducting material.
It is also affected by an externally appliedmagnetic field generated for instance by a seriesor shunt coil, by the type of substrate material onwhich the superconducting film is deposited, and
by the thermal characteristics of the coolingliquid in which the film is immersed.
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Design Parameters of theSuperconducting Film
T < Tc and J > Jc ( ) ( )( )
JJ
77TTT1TJ, c77
c
cksc
=
T > Tc ( )( )90-T1010-8-6
+=sc
tAC
iRT
sc
2
limsc =scl
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Tsc, ilim, Rsc, and vsc for a short superconductingfilm (10cm) when Jc= 10A/mm
2
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Tsc, ilim, Rsc, and vsc for a medium superconductingfilm (50cm) when Jc= 10A/mm
2
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Tsc, ilim, Rsc, and vsc for a long superconductingfilm (10m) when Jc= 10A/mm
2
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Effect of lsc andJc
0
0,2
0,4
0,6
0,8
1
10 20 30 40 50
Firstpeaklimited
current/peak
prospective
current(-)
Jc=10A/mm^2 Jc=100A/mm^2
0
2
4
6
8
10
12
10 20 30 40 50
Fifthpeaklimitedcurrent/peak
nominalcurrent(-)
Length (cm)
Jc=10A/mm^2 Jc=100A/mm^2
Length (cm)
77
127
177
227
277
327
10 20 30 40 50
Tempe
rature(K)
Length (cm)
Jc=10A/mm^2 Jc=100A/mm^2
0
2
4
6
8
10
10 20 30 40 50
Transientovervoltage/peakinput
voltage(-)
Length (cm)
Jc=10A/mm^2 Jc=100A/mm^2
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Effect of the input voltage and Jc
0
0,2
0,4
0,6
0,8
1
40 80 120 160 200
Firstpeaklimitedcurrent/peak
prosp
ectivecurrent(-)
Peak input voltage (cm)
Jc=10A/mm^2 Jc=100A/mm^2
0
2
4
6
8
10
12
40 80 120 160 200
Fifthpe
aklimited
current/peaknominalcurrent
(-)
Peak input voltage (V)
Jc=10A/mm^2 Jc=100A/mm^2
77
177
277
377
477
40 80 120 160 200
Tem
perature(K)
Peak input voltage (V)
Jc=10A/mm^2 Jc=100A/mm^2
0
200400
600
800
1000
1200
1400
10 30 50 70 90 110 130 150 170 190
Peakinputvoltage(V)
Length (cm)
Jc=10A/mm^2 Jc=100A/mm^2
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Tscof the weak and major parts when Jc= 10A/mm2
lsc = 10cm lsc = 60cm
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Tsc of the weak and major parts whenJc = 100A/mm2
lsc = 10cm lsc = 60cm
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Tsc of the weak and major parts when
Jc= 10A/mm2, lsc= 60cm, and Vinp = 160V Jc= 100A/mm
2, lsc= 60cm, and Vinp = 380V
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Tsc of the 10 sections whenJc = 10A/mm2
lsc= 10cmlsc= 60cm
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Tsc of the 10 sections whenJc = 100A/mm2
lsc= 10cm lsc= 60cm
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Conclusion1. Increasing lsc is desirable if instantaneous limitationand recovery with no excessive current dives or
overvoltages are required. However, increasing
increases the volume of the FCL and the losses undernon-fault conditions.
2. IncreasingJc is desirable as this effectively limits the
au curren . owever, or g c, e
superconducting film can survive only if it is so
homogeneous that its whole length quenches
simultaneously.
3. In a long limiter length or in a limiter consisting ofmany samples connected in series, the fault current
may be limited by only a small fraction of the limiter
while most of its length stays below Tc.
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Conclusion4. Increasing the voltage per unit length across the
superconducting film could be a reliable way of
solving the weak parts problem in superconducting
samples with lowJc. However, it is not effective in
samples with highJc.
5. Increasing Tsc during the limiting period is not safeas it is relies on the opening of a circuit breaker to
remove the current. If for any reason the circuit
breaker opening is delayed, the likelihood is that
the superconducting film will be damaged andthere is a consequent risk that the resistive SCFCL
will be totally destroyed.
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Simulation of Resistive SCFCL with
Shunt Resistor and Boost Coils
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Introduction
The first problem can be reduced by
connecting a shunt resistor across thesuperconducting film. The second problemcan be reduced by designing the resistive
SCFCL so that the critical currents of the weakand major parts of the superconducting filmand of the different sections of a multisectionfilm are below the limited current. This could
be done by applying a magnetic field to thesuperconducting film during the fault period.
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Maximum Tsc during the fault period and thenormalised first peak of both ilim and isc whenJc= 10A/mm2 and lsc = 10cm
0,6
0,8
1
227
277
327
ited
pective
e(K)
0
0,2
0,4
77
127
177
0,1 1 10
Firstpeaklim
current/peakpro
current
(-
Temperat
ur
Shunt resistance (ohm)
Tsciscilim
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Waveforms ofvsc
during the fault period for
different Rsh when Jc= 10A/mm2 and lsc =
10cm
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Waveforms of weak part and major part temperaturewhen lsc = 60cm,Jc= 10A/mm
2
Rsh = 0.1 Rsh = 10
The weak parts problem becomes worse when using a shunt resistor
and small values ofRsh are worse than high values. This is becausethe shunt resistor decreases isc, which helps the major part to stay
below the critical temperature, so that the fault is then limited by the
weak part only.
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Effect of Connecting a Shunt Boost
Coil across the Resistive SCFCL
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Superconducting film contains only one smallweak part
Jc= 100A/mm2Jc= 10A/mm
2
The weak parts problem is diminished when a magnetic
field is applied from a shunt boost coil. However, the
problem still exists, especially with highJc.
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Multisection superconducting film
Jc= 10A/mm2 and lsc = 60 cm Jc= 100A/mm
2 and lsc = 10 cm
The problem is nearly solved. However, a higher magneticfield would be required to quench all 10 sections.
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Effect of Connecting a Series Boost
Coil with the Resistive SCFCL
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Values ofKc, Lseries and Rseries of theseries boost coil
Values ofKc and the corresponding impedancesof the coil estimated for six designs of boost coil
same core different number of turns .
Kc (T/A) 0.0125 0.01 0.005 0.0025 0.002 0.001
L (mH) 1.7 1.088 0.272 0.068 0.04352 0.01088
R (m) 34 27.2 13.6 6.8 5.44 2.72
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Superconducting film contains only one small weakpart forJc = 10A/mm
2, lsc = 60cm, and Kc = 0.002T/A
With this small value ofKc, the two parts quenchsimultaneously, however, the above design is accompanied
by high overvoltages ofvsc
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Multisection superconducting film
Jc
= 10A/mm2,
= 60cm
Jc
= 100A/mm2,
= 10cm
Jc
= 100A/mm2,
= 60cm
Q NQ Q NQ Q NQ
Without boost coil 3 7 7 3 1 9
With shunt boost coil
(perpendicular field)
8 2 9 1 1 9
Kc = 0.0125T/A
With series boost coil
(Parallel field)
9 1 10 0 10 0
Kc = 0.002T/A Kc = 0.001T/A Kc = 0.01T/A
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Conclusion
1. Use of a shunt resistor is advantageous with high
Jc but cannot be used with lowJc films. Low valuesofRsh are not preferred. Transient overvoltages
can be reduced by using a shunt resistor.
2. Use of a shunt boost coil is accompanied bysignificant transient overvoltages. Perpendicular
magnetic field is preferred when a shunt boost
coil is used. It helps to reduce the weak parts
problems but seems not to solve it completely.Finally, large coils are required to generate high
magnetic fields.
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Simulation of Resistive SCFCL
with Different Substrates
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Introduction There are several substrates available and several
deposition methods for HTS. LaAlO3 (Lanthanum
Aluminate), Al2O3 (Sapphire), YSZ (Yttria StabilisedZirconia), STO (Strontium Titanate), and MgO
(Magnesium Oxide) substrates are used for YBCO films.
e erma con uc v y o e su s ra e p ays a grea
role in the removal of heat from the superconductingfilm during the fault period.
If the superconducting film is deposited on a low
thermal conductivity substrate then the heat removedto the substrate will be small. However, if a high
conductivity substrate was used then the heat removed
will be improved.
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Heat transfer between thesuperconducting film and liquid nitrogen
+=
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Heat transfer between thesuperconducting film and substrate
T
T1
T2
Layer 1
Layer 2
Superconducting film
Substrate
[ ] [ ]
+
=
2
1
2
1
2
1
.
.
U
U
B
.
.
T
T
A
.
.
T
T
Tm = 77 K
Tm-1
m-ayer m-
Layer m
Surface in contact with liquid nitrogen
DUCXY
BUAXX
+=
+=
[ ] [ ]
+
=
m
2
1
m
2
1
m
2
1
mm
.
m
U.
.
U
U
D
T.
.
T
T
C
T.
.
T
T
UT
T
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Heat transfer between thesuperconducting film and substrate1
22
22
222
222
22
0
00
0
k
B,
-
0k2k-0000
0002k-k00000k2k-k0
0000k2k-k
00000kk-
A
=
=M
L
L
MMMOMMMM
L
L
L
L
2
22
2
22
1
222
dCk,
VC
1kwhere
0
0
0
0
0
0
0
D,
1000000
0100000
0010000
0001000
0000100
0000010
0000001
C
00000000
==
=
=
M
L
L
L
MMMOMMMM
L
L
L
L
L
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Heat transfer between thesuperconducting film and substrate
MgO STO YSZ
Thermal conductivity (W/m.K) 40.6 20 1.4
Specific heat capacity (J/m3.K) 3 106 1.216 106 2.5 106
Thermal
conductivity for
single crystal
sapphire
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177
227
277
erature(K)
Sapphire YSZ
77
127
0 0,2 0,4 0,6 0,8 1
T
emp
Distance (mm)
Temperature along the axis of
the substrateTscwhen usingdifferent substrates
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Temperature distribution for
Sapphire substrate layers
Temperature distribution for
YSZ substrate layers
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200
250
300
(V)
10A/mm^2
100A/mm^2
0
50
100
150
YSZ STO MgO Sapphire
Voltage
Substrate material
Maximum allowable input voltage with different substrate materials
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Effect of Substrate on the Weak Parts Problem
STO substrate MgO substrate
Neither STO nor MgO substrates are effective in solvingthe weak parts problem.
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Sapphire, Jc = 100A/mm2, lsc
= 10cm, and peak Vin = 80V
Sapphire, Jc = 100A/mm2, lsc =
60cm, and peak Vin = 400V
Sapphire substrate appears to solve small disturbances in
the temperatures of the different sections.
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Conclusion1. Liquid nitrogen has a negligible effect on Tsc during
the limitation time.
2. The thermal conductivity of the substrate plays amajor role in absorbing heat from the
superconducting film during and after the fault
, sc
voltage per unit length. This effect increases whenincreasingJc. Absorption of more heat decreases
the recovery time of the film.
3. YSZ, STO and MgO substrates have no effect on
solving any weak parts problem. However, sapphire
substrates can solve a mild weak parts problem but
fail in solving a severe weak parts problem.
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Simulation of the Shielded-
Inductive SCFCL
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Laboratory Set-up and
Ex erimental Procedures
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Introduction
Magnetic fields applied to the superconductingsample can be generated from a boost coil
connected in series or in parallel with the
superconducting sample. This coil can have either an
.
of both types of coil are covered. Irons higher permeability is expected to result in
improved figures of weight, resistance and
inductance. In order to ensure a uniform magnetic
field on the superconducting sample, it is envisagedthat the superconducting sample is located in an air
gap in the iron circuit.
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95
55
55
5
10
55
15
35
Configuration of the iron
core used for the iron-
cored coil (dimensions in
mm)
2
8
5
55
10
55
10
10
5
58
101
0
1
(a) (b) (c)
Configuration of the pieces
of material used for
insulating coil from the
iron core and keeping the
veroboard in uprightposition (dimensions in
mm)
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1010
3
Current probes
Voltage probes
1234
51
51
3
Superconductor sample
Schematic diagram of the DC 4-
terminal method
Superconducting sample (dimensions in mm)
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Circuits used for measuring I-Vcharacteristics of thesuperconducting sample
DC input
voltage
Pulsed
voltage
tnt
Current Probe
Am lifier
Line resistance
Gate
DriveInstrumentation
Amplifier
Digital
Storage
Oscilloscope
Superconducting
Sample
CurrentMeas
ureme
Voltage Measurement
IRF540
MOSFET
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Measuring the I-VCharacteristics of theSuperconducting Sample
8,0E-04
1,0E-03
1,2E-03
(V/cm)
0 mT
11 mT
22 mT
34 mT
57.75 mT
0,0E+00
2,0E-04
4,0E-04
6,0E-04
0 4 8 12 16 20
Electricfield,
E
Current density, J (A/mm^2)