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Radiation tests in Padova
Giovanni Busetto, Alessandro Paccagnella
INFN and Università di Padova
G. Busetto, A. Paccagnella INFN and Università di Padova
Presentation
• Radiation facilities at the INFN National Laboratories of Legnaro (LNL-INFN):
– dedicated ion beam line at the TANDEM accelerator
– microbeam at the AN-2000 accelerator
– X-ray facility
G. Busetto, A. Paccagnella INFN and Università di Padova
Dedicated ion beam line
TANDEM accelerator,LNL- INFN
G. Busetto, A. Paccagnella INFN and Università di Padova
Scattering ChamberLNL-INFN
G. Busetto, A. Paccagnella INFN and Università di Padova
Beam Line Characteristics
• Device under radiation inside the vacuum chamber (<8 10-6 mbar)
• Electrical connections via feedthrough: D-type connector with 50 pins and 16 BNCs
• Under development: wireless connection• Ion fluence measurements:
– Si diodes (low ion currents) – Faraday cup (high ion currents)
G. Busetto, A. Paccagnella INFN and Università di Padova
Ions already usedIon Specie Energy
[MeV]LET
[MeV·cm2/mg]12C 88 1.5716O 109 2.8519F 117 3.7828Si 175 8.1658Ni 213 27.7
107Ag 257 52.2127I 288 61.8
G. Busetto, A. Paccagnella INFN and Università di Padova
Available Ions
List of ions available at the TANDEM accelerator:
H, Li, B, C, N, O, F, Mg, Al, Si, P, S, Cl, Ca, Ti, Cr, V, Fe, Ni, Cu, Zn, Ge, Se, Br, Zr, Mo, Ag, I, Au
Only Se and Mo have not been tested yet
G. Busetto, A. Paccagnella INFN and Università di Padova
Radiation tests performed• GLAST: test of ASIC (July 2001) / measurement of SEU
sensitivity of 5 shift register types
• Si Microstrip detectors and associated read-out electronics
• CMOS elementary components (MOS, MOSFETs)
• Field Programmable Gate Arrays (FPGAs)
• FLASH EPROM memories
• III-V solar cells and components (MESFETs, HEMTs)
• ...
G. Busetto, A. Paccagnella INFN and Università di Padova
Test Circuit (FPGA)
G. Busetto, A. Paccagnella INFN and Università di Padova
Test circuit (PCB)
EPF10K100
14 MHz
EPC1K8
26c31
26c32
80 m
Device under beam
G. Busetto, A. Paccagnella INFN and Università di Padova
Supply current
200
300
400
500
600
700
800
0 200 400 600 800 1000
Time (s)
Icc
(mA
)
Error type
0
0,5
1
1,5
2
2,5
3
3,5
0 200 400 600 800 1000
Time (s)
Err
or
cod
e
Trig: OkQ1: NoQ2: NoQ3: Ok
Trig: OkQ1: NoQ2: NoQ3: No
Irradiation with 109 MeV O ions, LET=2.85 MeV cm2/mg
G. Busetto, A. Paccagnella INFN and Università di Padova
Supply current
200
250
300
350
400
450
500
550
600
650
0 200 400 600 800 1000 1200 1400
Time (s)
Icc
(mA
)
Error type
0
2
4
6
8
10
12
14
16
0 200 400 600 800 1000 1200 1400
Time (s)
Err
or
cod
e
Trig: NoQ1: OkQ2: OkQ3: Ok
Trig: OkQ1: NoQ2: NoQ3: No
Trig: OkQ1: OkQ2: NoQ3: No
Trig: OkQ1: NoQ2: NoQ3: No
Irradiation with 109 MeV O ions, LET=2.85 MeV cm2/mg
G. Busetto, A. Paccagnella INFN and Università di Padova
Device cross Section (latch-up)
1,00E-08
1,00E-07
1,00E-06
1,00E-05
1,00E-04
1,00E-03
1,00E-02
1,00E-01
0 20 40 60 80
LET (MeV cm^2 / mg)
Dev
ice
Cro
ss S
ecti
on
[cm
2 ]
Weibull fit:F(L)=Fsat (1- exp{-[(L-L0)/W]s})Fsat=3.1·10-2 cm2
L0=0.1 MeV · cm2/mgW=32s=5
G. Busetto, A. Paccagnella INFN and Università di Padova
Other facilities
• Microbeam at the AN-2000 accelerator: – H and He ions, 2 MeV maximum – rastered area 2x2 mm2 (max)– beam current 10 pA– spot size < 2 m – first tests (May 2001) on FPGAs
• X-ray facility– under installation
G. Busetto, A. Paccagnella INFN and Università di Padova
X-ray Semiconductor Irradiation Facility
System characteristics:
• The system is composed of a X-ray machine (Seifert RP149) and an 8 inch wafer probe.
• Dose rate variable between 10 rad/s and 800 rad/s (for radiation tolerance studies) .
• Diameter of the X-ray beam up to 1 cm in standard use conditions.
• Maximum power supply voltage: 60 kV.
• Maximum tube current: 60 mA (at 50 kV maximum).
G. Busetto, A. Paccagnella INFN and Università di Padova
X-ray Semiconductor Irradiation Facility
• The system will be assembled at INFN National Laboratory of Legnaro (Padova) November 21th 2001.• The facility will be ready for operation before the end of 2001.