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1
Sergey V. Zakharov 12+,
Vasily S. Zakharov 123, Peter Choi 1
1 EPPRA sas, Villebon sur Yvette, France2 NRC Kurchatov Institute , Moscow, Russia3 KIAM RAS , Moscow, Russia+ also with UCD, Dublin, Ireland
and JIHT RAS, SRC TRINITI, Moscow, Russia
Properties of HighProperties of High--Intensity Intensity EUV & EUV & SoftSoft--X Radiation Plasma SourcesX Radiation Plasma Sources
2
Sn, Xe… High Energy Density plasma(Te=20-40eV) radiates in EUV range
LPP & DPP
Sources for EUV LithographySources for EUV Lithography
NOWNOWEUV for EUV for HVMHVMbeyond 16 nmbeyond 16 nm
1r kNAλ
≥
Diffraction restrictsDiffraction restrictsthe resolutionthe resolution
λλ 13.5nm 13.5nm 6.Xnm6.Xnm(h(hνν=92eV =92eV 185eV)185eV)
δλδλ//λλ 2%2%
• For HVM: >> 200 W of in-band power at IF within < 3mm2sr etendue• For mask inspections ABI→AIMS→APMI : 30 → >100 W/mm2·sr
The optics is made of The optics is made of multimulti--layer layer mirrorswith reflection efficiency ~70%with reflection efficiency ~70%
3
EUV Brightness Limit for EUV Source EUV Brightness Limit for EUV Source
Spherical model of tin plasma EUV
source
The radiation self-absorption limits the in-band EUV radiance from the plasma, and
the etendueconstraint limits the usable power at IF of a conventional single
unit EUV sourceDetailed spectra from tin plasma with radius R=100 μm and ne=1019 cm-3
RMHD scan for tin plasma optimized
by radius, temperature and density [AL10]
10-5
10-4
10-3
10-2
10-1
100
101
102
10-18 10-16 10-14 10-12 10-10 10-8 10-6 10-4 10-2
R=0.04m mR=0.08m mR=0.16m mR=0.31m mR=0.625mmR=1.25m mR=2.5m mR=5mm
EUV
Rad
ianc
e, M
W/m
m2
sr
E ffective Depth (rho2*r), g2/cm3
tin
0
0.05
0.1
0.15
10-18 10-16 10-14 10-12 10-10 10-8 10-6 10-4 10-2
R=0.04m mR=0.08m mR=0.16m mR=0.31m mR=0.625mmR=1.25m mR=2.5m mR=5mm
Spec
tral E
ffici
ency
(Peu
v/Pr
ad)
E ffective Depth (rho2*r), g2/cm5
tin
Z* Scan
g2/cm5
L ≈ 1.1(W/mm2 sr)·τ(ns)·f(kHz)
4
EUV Brightness Limit at Higher Temperature EUV Brightness Limit at Higher Temperature
• The intensity upper Planckian limit of a single spherical optically thick plasma source in Δλ/λ=2% band around λ=13.5nm
• Source with pulse duration τ and repetition rate f yields the time-average radiance L =I·(τ f)
• The spectral efficiency has the maximum at T≈22eVL ≈ 1.1(W/mm2sr)·τ(ns)·f(kHz)
• For instance, at τ =20ns L = 22 (W/mm2 sr)/kHz.
0
1
2
3
4
5
6
7
8
9
10
10 11 12 13 14 15 16 17 18
Tin line emission spectra
5 eV10 eV15 eV20 eV25 eV30 eVtin
.
)/(72/2 2
)(924
2
11srmmMWhcI
ee eVTThc
−≈
−
Δ=
λ
λλλ
0
1
2
3
4
5
6
7
8
9
10
10 11 12 13 14 15 16 17 18
Tin line emission spectra
20 eV30 eV40 eV50 eV60 eV
Non-LTELTE
5
ns-order CO2 laser(main pulse)
sub-ns Nd:YAG laser(pre-pulse)
Target Chamber
Beam splitter
Collector Mirror
Sn Droplet Target
EUV / 13.5nm
Combined Combined Nd:YAGNd:YAG -- COCO22 Laser SystemLaser System
6
Tin plasma density at EUV maximum
0
0.1
0.2
0.3
0.4
0.5
0.6
-10 0 10 20 30 40 50 60Po
wer
, MW
Time, ns
in-band EUV emission
LPP EUV Source LPP EUV Source under CO2- laser or combined pulse
The maximum EUV brightness is up to15 W/mmThe maximum EUV brightness is up to15 W/mm22 srsr kHzkHz
Time-integratedEUV source image
critical-layer instability
R(cm)
Z(cm
)
-0.05 0 0.05 0.1
0.05
0.1
0.15
Qeuv(J/ccm)
1.10E+041.05E+041.00E+049.56E+039.07E+038.59E+038.11E+037.63E+037.15E+036.67E+036.19E+035.71E+035.22E+034.74E+034.26E+033.78E+033.30E+032.82E+032.34E+031.86E+031.37E+038.93E+024.11E+02
-7.00E+01
Time-Integrated
Frame 001 ⏐ 14 Oct 2011 ⏐ ZSTAR - code output, cell values
R(cm)
Z(cm
)
-0.05 0 0.05 0.1
0.05
0.1
0.15
DENS(g/ccm)
1.0E-038.4E-047.1E-046.0E-045.1E-044.3E-043.6E-043.0E-042.6E-042.2E-041.8E-041.5E-041.3E-041.1E-049.2E-057.8E-056.6E-055.5E-054.7E-053.9E-053.3E-052.8E-052.4E-052.0E-05
t= 1.9548E+01 ns
Frame 001 ⏐ 14 Oct 2011 ⏐ ZSTAR - code output, cell values
R(cm)
Z(cm
)
-0.05 0 0.05 0.1
0.05
0.1
0.15
DENS(g/ccm)
5.0E-033.7E-032.7E-032.0E-031.5E-031.1E-038.2E-046.1E-044.5E-043.4E-042.5E-041.8E-041.4E-041.0E-047.5E-055.5E-054.1E-053.0E-052.2E-051.7E-051.2E-059.1E-066.8E-065.0E-06
t= 2.5826E+01 ns
Frame 001 ⏐ 14 Oct 2011 ⏐ ZSTAR - code output, cell values
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
-10 0 10 20 30 40 50 60
Pow
er, M
W
Time, ns
in-band EUV emission
CO2-laser0.2 J/pulse
w/o prepulse
CO2-laser 0.2 J/pulse
with psNdYAGprepulse
R(cm)Z(
cm)
-0.05 0 0.05 0.1
0.05
0.1
0.15
Qeuv(J/ccm)
3.00E+042.83E+042.65E+042.48E+042.30E+042.13E+041.96E+041.78E+041.61E+041.43E+041.26E+041.09E+049.13E+037.39E+035.65E+033.91E+032.17E+034.35E+02
-1.30E+03-3.04E+03-4.78E+03-6.52E+03-8.26E+03-1.00E+04
Time-Integrated
Frame 001 ⏐ 15 Oct 2011 ⏐ ZSTAR - code output, cell values
7
0
0.5
1
1.5
2
2.5
3
3.5
4
0 10 20 30 40 50 60
Con
vers
ion
Effic
ienc
y, %
Pulse duration, ns
200mJ w/out prepulse200mJ with 6mJ ps prepulse200mJ with 5mJ ns prepulse
100mJ w/o and with ns prepulse(EUVA)100mJ with 6mJ ps prepulse400mJ with 6mJ ps prepulse800mJ with 6mJ ps prepulse
Main pulse: CO2-laser 0.1-0.8 J/pulse, 10,15,30,50ns fwhm, 200μm focal spotPre-pulse laser (if applied): Nd:YAG 5 mJ 1-10ns pulse, 40μm spot size
or Nd:YAG 6 mJ 10-100 ps pulse, 40μm spot size
Conversion Efficiency of COConversion Efficiency of CO22--laserlaseron pulse duration, with & w/out pre-pulses
Target:Liquid tin droplet of 40μm diameteror20μm for 100mJ (EUVA)
Conditions:different focal positions;different time delay between pre- & main-pulse CE depends strongly on laser intensity and target irradiation conditions
CE maximum of 3% can be reached at laser energy (200mJ) in a combined ps-ns pulse
8
Laser Assisted Vacuum Arc (LAVALaser Assisted Vacuum Arc (LAVA--lamp)lamp)
Dischargecapacitance 0.4 μFinductance 19 nHvoltages 3 – 6 kVenergies 1.8 – 7.2 Jcurrent 20 kA at 4.5 kV
Trigger laser:wavelength 1064 nmbeam diameter 3 mmfocal lens 30 cm energy 5 – 50 mJ(varied by means of rotatable half-wave plate and polarizing beam splitter)
High-current discharge between two rotating electrodes covered with a thin liquid Tin or Galinstan film is triggered by local laser ablation of electrode material.
Details are presented in the posters : S26 V.S. Zakharov, Larissa Jushkin, S.V. Zakharov et al S30 Isaac Tobin, Larissa Juschkin, Vasily S. Zakharov et al
CA
Laser
9
Comparison of measured and Z* modellingComparison of measured and Z* modellingdischarge current and in-band EUV emission
tin
10
5 10 15 20 25
05000100001500020000250003000035000400004500050000
o.4
o.3
o.2
o.1
Wavelength (nm)
pressure (m
bar)
Inte
nsity
(arb
. uni
ts)
t
optical streak photograph
300 350 400 450 500 550
5
10
15
20
25 Irradiance Linear Fit of Data1_phcm2s
Irran
dian
ce E
17 p
h/cm
2/s
Stored energy (mJ)
-100 -50 0 50 100 150 200 250
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
23.5kV 23.2kV 22.7kV 21.5V 20.8kV 19.5kV
Phot
odio
de s
igna
l (V)
Time (ns)
EUV emission
Capillary Capillary DischargeDischarge EUV SourceEUV SourceEXPERIMENT: discharge glow & EUV emission
EUV spectrum
11
Power sourceCharge energy 0.2 – 0.5 JCurrent 5 - 10 kAPulse ~10-20 ns
Capillary ∅ 1.6 mmdimension: L = 12-18 mm
Various electrode geometries
Gas: 0.02-2 Torr gradient He;
Xe, N2, Ar, Kr,, … admixtures(for narrow-band radiation source)
Experimental set up
Example ofsimulatedgeometry
capillaryEnergy storagecapacitor bank
EUV
Capillary discharge dynamics & emission features:
E-beam, plasma channelling (ε>>1)
Volumetric MHD compression (skin depth >>plasma diameter)
Highly ionized ions (fast electrons)
Capillary discharge dynamics & emission features:
E-beam, plasma channelling (ε>>1)
Volumetric MHD compression (skin depth >>plasma diameter)
Highly ionized ions (fast electrons)
High Brightness EUV High Brightness EUV Plasma Plasma SourceSourcepulsed capillary discharge
12
Electron beam in the HC capillary discharge
⇒ run-away electrons
⇒ electric field drops deeper into HC
⇒ e-beam concentration (ɛ >>1)
⇒ e-beam-gas ionization
⇒ ionization wave
In the first few nanoseconds, run-away electrons from the hollow cathode generate a tight ionized channel (< 200μm diameter) in the gas
HollowHollow--cathode Capillary Dischargecathode Capillary Dischargemodelling: triggering by fast electrons
Hollowcathode
Anodeca
pilla
ry
capi
llary
together with Markov M.B. et al, KIAM RAS
13
Capillary Capillary DischargeDischarge EUV SourceEUV SourceZ*-code modelling: resistive regime
-5
-4
-3
-2
-1
0
1
2
0 20 40 60 80 100
Dis
char
ge c
urre
nt, k
A
Time, ns
In the resistive regime of capillary discharge, the high joule dissipation in the tight conductive channel produced by hollow cathode electron beam creates an efficient mechanism of plasma heating and EUV or soft X-ray emission.
Also, fast electrons increase the ionization degree of heavy ion (Xe,…) plasma increasing eo ipso EUV yield.
-6-5-4-3-2-1 0 1 2 3 4
0 5 10 15 20 25 30 35 40
disc
harg
e cu
rren
t, kA
time, ns
I, kA
Inductive regime Resistive regime
19kV charge 1.2 nF capacitor
23kV charge1.9 nF capacitor
Nitrogen asbuffer gas
14
Ne=2-3 ⋅1017cm-3, Te=25-40eV.
R(cm)
Z(cm
)
0 0.5
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4 Qeuv(J/ccm)
1.0E+009.7E-019.4E-019.1E-018.8E-018.5E-018.2E-017.9E-017.6E-017.3E-017.0E-016.7E-016.3E-016.0E-015.7E-015.4E-015.1E-014.8E-014.5E-014.2E-013.9E-013.6E-013.3E-013.0E-01
Time-integrated
Cathode
Anode
capi
llary
capi
llary
Frame 001 ⏐ 13 Oct 2010 ⏐ ZSTAR - code output, cel
EUV source cross-section
0
0.01
0.02
0.03
0.04
0.05
0 20 40 60 80 100
Pow
er, M
W
Time, ns
EUV emissionin 2% @ 13.5nm
496mJ storedenergy
Calculated in-band EUV emission
0.885 W/kHz
The traced along the axis, EUVintensity at 13.5nm wavelength 15.3 W/eV mm2 sr per kHz
R (cm )
Z(cm
)
0 0.5
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4 Ne(Av)
1.0E-078.2E-086.7E-085.5E-084.5E-083.7E-083.0E-082.5E-082.0E-081.6E-081.4E-081.1E-089.0E-097.4E-096.1E-095.0E-094.1E-093.3E-092.7E-092.2E-091.8E-091.5E-091.2E-091.0E-09
t= 3 .3 1 1 4 E + 0 1 ns
C athode
Anode
capi
llary
capi
llary
F ram e 0 0 1 ⏐ 1 2 O ct 2 0 1 0 ⏐ Z S T AR - code output, cel
3D volumetric compression
Capillary Capillary DischargeDischarge EUV SourceEUV Sourcedynamics & EUV emission
15
Energy scan calculated
(in 2% band)
Optimizationby gas mixture pressure
EUV source scan by stored electrical energy
0
200
400
600
800
1000
0 5 10 15 20 25 30
In-b
and
EUV
ener
gy p
er s
hot,
uJ
Pressure, a.u.
885μJ/shot
496mJ storedenergy
0
200
400
600
800
1000
200 250 300 350 400 450 500 550 600In-b
and
EUV
ener
gy p
er s
hot,
uJ
Stored energy, mJ
Resistive regime
Capillary Capillary DischargeDischarge EUV SourceEUV SourceZ*-code modelling: source optimization
16
To produce the maximum EUV light power the double condition is required: + fast electrons have the energy of few keV to produce the highly charged ions + plasma has the temperature sufficient for the excitation of required transitions
EUV Emission of Highly Charged EUV Emission of Highly Charged XeXe IonsIons- from plasma with fast electrons
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0.02
12.5 13 13.5 14 14.5
Xe XIXe XXIII 3%@6keVXe XXIII 5%@6keV
Xe XXIII 3%@12keVXe XXIII 5%@12keV
Te=30eV
0
0.02
0.04
0.06
0.08
0.1
12.5 13 13.5 14 14.5
Xe XI @ 33 eVXe XXI @ 80eV + 2% 3keV
Xe XXII @ 80eV + 2% 3keVXe XXIII @ 80eV + 2% 3keVXe XXIV @ 80eV + 2% 3keV2%
Te=80eV
17
EUV Emission of Highly Charged EUV Emission of Highly Charged XeXe IonsIons- from e-beam triggered discharge plasma
5 10 15 20 25
05000100001500020000250003000035000400004500050000
o.4
o.3
o.2
o.1
W avelength (nm)
pressure (mbar)
Inte
nsity
(arb
. uni
ts)
0
.1r)
in
EUV MeasurementCapillary discharge. VUV spectrograph data
Bright EUV emission in 2% band at 13.5 nm can be achieved from highly charged xenon ions in plasma with small percentage of fast electrons
18
Focusing Effect ObservationFocusing Effect Observation
75cm75cmSourceSource
1
32
Scanned signal profile
-8 -6 -4 -2 0 2 4 6 80
500
1000
1500
2000
2500Data: 130 mmModel: LorentzChi^2/DoF = 3606.02R^2 = 0.99 y0 -80.04 ±17.95xc -0.25 ±0.02w 1.93 ±0.08A 6711.24 ±234.59
EUV
band
(Zr f
ilter
)AXU
V si
gnal
(mV)
radial distance (mm)
EUV band (Zr filter) radiation beam profile at 130mm from collimator exit
HWHM
0 100 200 300 400 500 6000
1
2
3
4
angle = tan-1(1.8/400) = 0.26 degreesolid angle = 6.36 e-5 steradian
radi
al d
ista
nce
(mm
)
axial distance from end of collimator (mm)
measured half width Linear fit of Data
♦
)(f1n 12
2e2 ω
ωω
−=
δn =|1-n|<<1;δn ~ 0.01÷0.05 (in solid matter) and δn = 0.0000…. (in plasma) for EUV range
How it is possible in geometrical optics? Know - How
19
WaveWave--guiding Refractive Structure guiding Refractive Structure
)sin(nN
αδθ
⋅= refractions are requiredΔθ
θ α
δn
)( ndld )( n
dld rrr rrr
r∇=⎥⎦
⎤⎢⎣⎡ light trajectory equation
Refractive Structure: e-beam exited Kielwasser-waves, k ≤ rD-1
Focussing : analytical ( )dzn
nkz
z
r
kk
r∫ +−≈− 2
2
02
2
5.0125.0)(
δ
δθθ
0
200
400
600
800
1000
1200
1400
1600
0 50000 100000 150000 200000 250000 300000 350000
rk
zk
TrajectoriesTrajectories
-0.02
-0.015
-0.01
-0.005
0
0.005
0.01
0.015
0 50000 100000 150000 200000 250000 300000 350000
dr/d
z
zk
tg(angle)tg(angle)
numerical
20
Multiplexer Multiplexer 4 4 ::- spatial multiplexing
All 4 sources aligned to a pointwithout use of any solid optical collector
25 mm
Z= 7 mm Z= 50 mm
Z= 0 mm @ Cross Over
4 sources operating individually with common power control
21
Etendue of a single source is E1 ≈ S· α2
IN FAR-FIELD the etendue of 4 equivalent sources is E4FF ≈ 4S· (α+β)2 ≈ 16 E1
IN NEAR-FIELD the declination due to β can be corrected and the etendue of 4 equivalent sources is E4NF ≈ 4S· α2 ≈ 4 E1
4π
4π
S1+S2(source image)
Facet mirror
Source S1
α
α
α
α
α
α
α
β
α+β
Source S2
EUV
4π
Multiplexer Multiplexer 44: : Optical SchematicOptical Schematicstatic combination of source beams to one
22
Overlapping of 4 suitably appertured Gaussian beamat a given flatness of 2% or 0.2%
An efficiency with flatness of 0.2% is of 22%.
MultiplexerMultiplexer44: : - 4-beams flatness optimization
0.98
0.98
0.980.98
0.98
0.98
0.98
0.9810.981
0.981
0.981
0.981
0.981
0.9 8
20.9
82
0.9820.
982
0.98
2
0.982
0.98
30.
983
0.983
0.983
0.98
3
0.983
0.984
0.984
0.984 0.9840.
9 84
0.9840.984
0.985
0.985
0.985 0.985
0.985
0.985
0.986
0.98
6
0.986
0.986
0 .98
6
0.986
0.987
0.987
0.9870.987
0.987
0.987
0.9 88
0.98
8
0.988
0.9 8
80.
988
0.988
0.98
90.
989
0.989
0.98
9
0.989
0.989
0.99
0.99
0.99
0.990.9 9
0.99
0.99
1
0.991 0.991
0.991
0.991
0.99
2
0.9920.992
0.992
0.992
0.9930.993
0.993
0.99
3
0.993
0.993
0.9940.994
0.994
0.99
4
0.994
0.9950.99 5
0.995
0.99
5
0.995
0.99
6
0.996
0.996
0.99
6
0.996
0.997
0.99
7
0.997
0.997
0.997
0.998
0.998
0.99
8
0.998
0.999
0.999
0.999
0.999
0.999
0.999
0.999
x(sig)
y(si
g)
-1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1-1
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
0.8
1
f
10.9990.9980.9970.9960.9950.9940.9930.9920.9910.990.9890.9880.9870.9860.9850.9840.9830.9820.981
a= 1.0180E+00 s= 1.3924E+00
Frame 001 ⏐ 09 Aug 2010 ⏐ Z-ray - code output, cell values
0.99
8
0.998
0.99
8
0.998
0.9982
0.99
82
0.9982
0.9982
0.9982
0.9984
0.9984
0.99
84
0.9984
0.9984
0.9986
0.9986
0.9986
0.9986
0.9986
0.99
88
0.9988
0.9988
0.9988
0.9988
0.99
88
0.99
9
0.999 0.999
0.99
9
0.999
0.999
0.9992
0.9992
0.9992
0.9992
0.9992
0.9992
0.99
94
0.99
94
0.9994
0.9994
0.9996
0.9996
0.99
96 0.99
96
0.9998
0.99
98
0.9998
x(sig)
y(si
g)
-1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1-1
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
0.8
1
f
10.99980.99960.99940.99920.9990.99880.99860.99840.9982
a= 1.0180E+00 s= 1.3924E+00
Frame 001 ⏐ 09 Aug 2010 ⏐ Z-ray - code output, cell values
2%0.2%
23
Gadolinium Plasma Emitting at 6.x nm Gadolinium Plasma Emitting at 6.x nm
1e-007
1e-006
1e-005
0.0001
0.001
0.01
0.1
1
5 10 15 20 25 30
50 eV60 eV70 eV80 eV90 eV
100 eV110 eV120 eV130 eV140 eV150 eV
1e-007
1e-006
1e-005
0.0001
0.001
0.01
0.1
1
5 10 15 20 25 30
50 eV60 eV70 eV80 eV90 eV
100 eV110 eV120 eV130 eV140 eV150 eV
• Ion populations
Ion charge Ion charge
Rel
ativ
e po
rtio
n
Ne=1019 cm-3 Ne=5x1020cm-3
Ion distribution spreads and average charge drops as density increases →→ for LPP very high temperature may be necessary
24
Gadolinium EmissionGadolinium Emissionlow temperature regime
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
6 6.2 6.4 6.6 6.8 7 7.2 7.4
Line emission spectra
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
6 6.2 6.4 6.6 6.8 7 7.2 7.4
Inte
nsity
, a.u
Inte
nsity
, a.u
Ne=1019 cm-3
Ne=5x1020 cm-3
Gd10+ - Gd18+
are taken into account
Almost 1 million transitions in total
More intensive emission is from4f-4d transitions
(4d94f m –4d104fm-1)
Te=60 eV
Ne=1019 cm-3, 5x1020 cm-3
25
0
500
1000
1500
2000
2500
3000
3500
4000
6.5 6.6 6.7 6.8 6.9 7
Efficiency in NonEfficiency in Non--equilibrium equilibrium GdGd PlasmaPlasmalow temperature regime
Ne=1019 cm-3, Te=50 eVSE @ 6.68 nm of 0.6% bandwidth 6.3%SE @ 6.68 nm of 2% bandwidth 17.5%
Ne=1019 cm-3, Te=60 eVSE @ 6.68 nm of 0.6% bandwidth 5.3%SE @ 6.68 nm of 2% bandwidth 18.5%
Ne=5x1020 cm-3, Te=60 eVSE @ 6.68 nm of 0.6% bandwidth 5.9%SE @ 6.68 nm of 2% bandwidth 16.8%
Wavelength, nm
Inte
nsity
, MW
/eV
x cm
2x
sr
Spectral modeling400 micron spherical Gd target
Det
aile
d ca
lcul
atio
ns w
ith a
bsor
ptio
n
200
400
600
800
1000
1200
1400
1600
6.5 6.6 6.7 6.8 6.9 7
10000
20000
30000
40000
50000
60000
70000
6.5 6.6 6.7 6.8 6.9 7
Optimizedoptical
throughput
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ZETA ZETA →→ ZZ* * RMHD Code RMHD Code →→ ZZ* * BME BME →→ ZZ++
multi-physics model
DischargeDischargeplasmaplasma
simulationsimulationin real in real
geometrygeometryLaserLaser
plasmaplasma
Data output:r,z,v,Te,i ,ρ,E,B,Z,Uω, etc;visualization
RMHD ( 2D, 3D ) with: • spectral multigroup radiation transport in nonLTE;
• nonstationary, nonLTE ionization; • sublimation – condensation;• energy supply (electric power, laser)• etc
TABLESnonLTE atomic &
spectral data(Te,ρ,U)
EMHD or 3D PIC with:ionization of weekly ionized
plasma, discharge triggering
Spectral postprocessing
Heat flux postprocessing
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Black-box Modelling Engine (Z*BME) is integrated into a specific computation environment to provide a turn-key simulation instrument, which does not require knowledge of numerical computation. It has been adapted to simulate DPP and LPP radiation sources in a realistic geometry.
Z*BME has been installed:
in EUVA, Japan in University College Dublin, Ireland in Czech Technology University, Prague
A number of joint simulations of EUV radiation sources with Z* -code of Cymer, Bochum University, Xtreme Tech, FOM, EUVA, UCD, Bruker has been performed in frameworks of collaborations and FACADIX, MoreMoore, Medea+, FIRE projects
ZZ* * BlackBlack--box Modeling Enginebox Modeling Engine
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plasma dynamics spectral radiation transportnon-equilibrium atomic kinetics with fast electrons transport of fast ions/electronscondensation, nucleation and transport nanosize particles.
• Modelling is essential in parametric scans in radiation source optimization, in fast particles and debris generation to solve current EUVL source problems as well as extending their application.
Next Generation Modelling ToolsNext Generation Modelling Toolsknowledge transfer in FP7 IAPP project
• FIRE - European FP7 Industry-Academia Partnerships and Pathways project
• The FIRE project aims to substantially redevelop the Z* code to Z+ to include improved atomic physics models and full 3-D plasma simulation of
29
AcknowledgementsAcknowledgementsEPPRA SAS, Villebon/Yvette, France Raul Aliaga-Rossel
Keldysh Institute of Applied Mathematics RAS, Moscow, Russia Vladimir G. Novikov,
Andrey V. Berezin, Mikhail B. Markov, Alex Yu. Krukovskiy
Joint Institute of High Temperatures RAS, Moscow, Russia Valentin P. Smirnov
SRC TRINITI, Moscow, Russia Vladimir M. Borisov
University College Dublin - School of Physics, Dublin, Ireland Gerry O’Sullivan, Padraig Dune, Emma Sokel, John White
Czech Technical University in Prague Miroslava Vrbova, Pavel Vrbov
EUVA, Manda Hiratsuka, Japan Georg Soumagne
RWTH Experimental Physics, Aachen, Germany Larissa Juschkin
TRINITY College Dublin Isaac Tobin, James Lunney
EUV LITHO, Inc Vivek Bakshi
Sponsors - EU & French Government ANR- EUVILFP7 IAPP