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A
A Technical Seminar Presentation
On
OVONIC UNIFIED MEMORY
Submitted By:
Maleeha Tabassum
12U81D5706
Department of Electronics & Communication Engineering
Sarada Institute Of Technology And Science
RaghunadhaPalem, Khammam 507002
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CONTENTS
Introduction
Emerging Memory Technologies
Ovonic Unified Memory
OUM Architecture
Advantages
Conclusion
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INTRODUCTION:
Semiconductor memory is an electronic data storage device.
Implemented on a semiconductor-based integrated circuit.
Semiconductor memory has the property of random access,
which means that it takes the same amount of time to access
any memory location.
In a semiconductor memory chip, each bit of binary data is
stored in a tiny circuit called a memory cellconsisting of one
to
several transistors.
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RECENT ADVANCED MEMORY
TECHNOLOGIES
Magneto resistive RAM(MRAM)
Resistive RAM (RRAM)
Phase- Change RAM(PCRAM)
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ABOUT CHALCOGENIDE ALLOY
Its a ternary system
It consists of gallium, antimony &
telluriumchemically called ge2sb2te5
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STRUCTURE & ELECTRIC PROPERTY OF PHASE
CHANGE MATERIALS
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OUM IS A NON VOLATILE MEMORY TECHNOLOGY WITH:
High speed
Low power
Reduced cost
High endurance
Merged memory / simplified logic
OVONIC UNIFIED MEMORY
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OUM Technology Concept
Amorphous Vs Crystalline
Short Range Atomic OrderLow Free Electron Density
High Activation Energy
High Resistivity
Long Range Atomic OrderHigh Free Electron Density
Low Activation Energy
Low Resistivity
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MEMORY STRUCTURE
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READING & WRITING DATATO WRITE DATA
Chalcogenide is heated above its melting pointto reset
state[high resistance]
Heated below its melting point for 50ns to set
state[low resistance]
TO READ DATA
Reading is done by simply measuring the
resistance change.
High resistance = set stateLow resistance = reset state
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PROGRAMMING
The OUM cell is programmed by application of a current pulse at
avoltage above the Switching threshold
The programming pulse drives the memory cell into a high or
low
resistance state, depending on magnitude of the pulse
voltage.
Information stored in the cell is read out by measurement of
the
cells resistance
OUM devices are programmed by electrically altering
thestructure(amorphous or crystalline) of the small volume of
chalcogenide alloy.
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BASIC DEVICE OPERATION
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V--I CHARACTERISTICSI CHARACTERISTICS
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Readwrite performance
High Speed
Endurance
Low programming energy
Process simplicity
Cost
CMOS embed ability
Scalability
ADVANTAGES
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Non volatile OUM with fast read and write speeds, high
endurance, low voltage/low energy operation, ease of
integration and competitive cost structure is suitable for
ultra
high density ,stand alone and embedded memory applications.
These attributes make OUM an attractive alternative to flash
memory technology and potentially competitive with volatile
memory technologies.
CONCLUSION
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|| THANK YOU ||
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