Ppt Document 1111

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On Dynamic Effects Influencing IGBT Losses in Soft Switching Converters

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ABST ACT

Two !ifferent !ynamic effects influencing the insulate! gate "i#olartransistor $IGBT% losses in soft&switching converters are !emonstrate!' The first

one( the Dynamic tail&charge effect shows that the tail charge is !e#en!ent notonly on the a"solute value of the current at turn&off( "ut also on the !ynamics ofthe current' This effect may have a significant im#act on the o#timi)ation of)ero&current&switching converters' The Dynamic con!uction losses originatefrom the con!uctivity mo!ulation lag of the IGBT' It is shown "y e*#erimentsthat the on&state losses !e#en! on the o#erating fre+uency' Different metho!s toaccurately !etermine the on&state losses are evaluate!' It was foun! that the "estmetho! is an in!irect measurement( where the stray in!uctance is i!entifie! "y

the use of an oscillating circuit' The e*#eriments are #erforme! un!er asinusoi!al current e*citation at a fi*e! am#litu!e $1,- A% for !ifferentfre+uencies $u# to 1-. /0)%' The switching !evices use! are IGBT mo!ulesrate! --2.-- A314-- 5 in a "ri!ge&leg configuration' 6rom the e*#eriments

#erforme!( it is foun! that IGBTs of a mo!ern #unch&though $7T% !esigns havethe lowest losses in the series&loa!e! resonant converters stu!ie! in this #a#er'

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I. INTRODUCTION

In many in!ustrial a##lications with #ower electronic converters( it

ma/es sense to o#erate the converter at high switching fre+uencies' There are

two main reasons to this fact' The first is that the necessary amount of material

in most #assive main&circuit com#onents is inversely #ro#ortional to the

switching fre+uency( which im#lies low initial costs at high&switching

fre+uencies' The secon! reason is that the !ynamic "an!wi!th is usually tightly

correlate! to the switching fre+uency( ena"ling a very goo! !ynamic system

#erformance at high&switching fre+uencies' 0owever( unless consi!era"le

!esign efforts are ma!e( "y !ifferent means( to sha#e the switching waveforms

of the semicon!uctor switches( the switching losses of the converter will "e

e*cessive at high switching&fre+uencies' An attractive solution to this #ro"lem

is soft&switching 81928:9' One class of converters calle! SL converter'

6ig' 1' Circuit !iagram SL '


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The SL converter is fre+uently suggeste! for in!ustriala##lications with high switching&fre+uencies $see 6ig' 1%' ;hen thisty#e of converter is o#erate! a"ove the resonance fre+uency( the turn&on transitions e*hi"it "oth )ero&voltage switching $


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It was foun! that the measure! losses were significantlyhigher than the calculate! ones' A #ossi"le e*#lanation to thea!!itional losses is that the con!uction losses e*hi"it su"stantial!ynamics( i'e'( a voltage !ro#(

6ig' 4' Dual control ty#ical waveforms'

;hich !e#en!s not only on the instantaneous value of thecurrent( "ut also on the history of the current 84,9( 84?9284:9' This isreferre! to as conductivity modulation lag ' If this is the case( !ifferentIGBT !esigns may e*hi"it more or less of this #henomenon'

An interesting conse+uence of the con!uctivity mo!ulation lag(as !escri"e! in 84:9( is that the resulting effect on the con!uction losseswoul! "e )ero if the forwar! current is a sinusoi!al halfwave'

Accor!ing to the e*#erimental results in 81?9( however( this !oesnot seem to "e true' oreover( 8419( 8449( an! 8 -9 state a cou#ling

"etween the con!uctivity mo!ulation lag an! the tail current in the case(where the current has a constant magnitu!e( "ut varia"le #ulse length'These investigations( however( only consi!er 7T !esigns' Since !ifferentIGBT !esigns have !ifferent !ynamic an! static #ro#erties( it ma/es senseto survey how IGBTs #resently availa"le on the mar/et #erform with

res#ect to con!uctivity ,


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mo!ulation lag an! the tail&current !ynamic !e#en!ence of the collectorcurrent 8 19( 8 49' A!!itionally( it is valua"le to in!icate( which IGBTs areo#timi)e! for the actual a##lication( as( for instance( in 8 9 an! 8 .9'Stu!ies on switching losses un!er soft&switching con!itions have "een

#erforme! on IGBTs with a high&"loc/ing voltage ca#a"ility 8 ,9' Also14-- 5 IGBTs have "een stu!ie! in the #ast 8 928 9' In 8 :9( the


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8..9 with an IGBT !esign of the 1::-s' This #a#er( however focuses onthe an!Device D =soft turn&off '> Device E is a 7T&ty#e of an ol!er !esign'Device 6 is a =high&s#ee!> 7T&ty#e 8.49( an! thus of a similar structure asC an! D' Devices G an! 0 are of a similar !esign as Device A( i'e' 7T'

Device I is a similar !esign as 6( "ut o#timi)e! for lower on&state losses'All test !evices are using the same !rive circuit in the !ifferente*#eriments'

F


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7III. T AIL C URRENT

The aim of this section is to investigate the !ynamic tail chargeeffect( i'e'( how the tail charge Q T of the IGBT !e#en!s not only on theturn&off current I OFF ( "ut also on the !ynamics of the con!ucte! current'

?

6ig' ' Collector current'

TABLE II L IST OF TURN -OFF CURRENTS AND CONDUCTION ANGLES .

Q T

Q T is measure! for !ifferent con!uction angles on a sinusoi!alcollector current( as shown in 6ig' an! in!icate! in Ta"le II'Thehy#othesis is if the !ynamic tail&charge effect e*ists( Q T has a lower

value on the rising slo#e of the current com#are! to the falling slo#e(


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6ig' .' Tail&charge measurement' Tr1 G 4 $1- 53!iv%( Tr4 I $1-- A3!iv%( Tr I E$1- A3!iv%( an! time -', s3!iv' :

The test is re#eate! at two !ifferent unction tem#eraturesT j $4, C an! 14, C% in or!er to investigate the im#act of thetem#erature' The high&tem#erature turn&off #erformance of earlygeneration IGBT !esigns has also "een stu!ie! in 8. 9' It was foun!that the tail current increase! significantly when increasing thetem#erature' Three test Devices $A( C( an! D% are com#are! $seeTa"le I%'

B. Results

The results of the tail&charge measurements are shown in6igs' ,2 ' The current waveform $!otte! line% is shown in the figuresas a reference for the rea!er' 6ig' shows that Q T !oes not followI OFF for Device A' At 4, C Q T $,% is ,-@ higher com#are! to Q T

$1%' In a!!ition( Q T $ %


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6ig' ,' Device A( Q T versus at - /0) '

6ig' ' Device C( Q T versus at - /0)'

"ehavior at higher fre+uencies( Device C was also measure! at 1,- Aan! 1-. /0)' The result is shown in 6ig' :' It a##ears that at thisfre+uency( the tail&charge curves are nonsymmetrical( i'e'( Q T $,%>Q T

11


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$1% an!Q T $.%> Q T $4% for "oth 4, C an! 14, C o#eration' Thus( itis in!icate! that Q T has a !ynamic !e#en!ence of the collector currentwhen measure! at 1,- A an! 1-. /0)'

11 C. Discussion

6rom the measurements( it is foun! that all the investigate!!evices $A( C( an! D% show evi!ence of the !ynamic tail&chargeeffect' 0owever( the onset of this effect occurs at !ifferentfre+uencies' 6or Device A( which is an 7T !evice( the effect isevi!ent alrea!y at - /0)' 6or Device C( which is a 7T $trench gate(

fiel! sto#% !esign the effect is foun! at the fre+uency 1-. /0)' ;henevaluating the losses !ue to the tail current( the a"solute values of Q Thave to "e consi!ere!'

A com#arison of the a"solute values of Q T for Devices Aan! C shows that Device A generally has ,-@ lower values of Q T thanDevice C' 0owever( if it is #ossi"le to switch Device C at theo#timum switching instant( it is #ossi"le to o"tain a very low Q T at

fre+uencies u# to 1-- /0)' This means that even though Device Cgenerally has a higher Q T com#are! to Device A( at high&switchingfre+uencies an!


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14

6ig' ?' Device D( Q T versus at - /0)'

6ig' ' Device C( Q T versus at 1-. /0) '


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6ig' : shows the total losses in the


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6ig'1-' Test circuit' 1.

It is e*#ecte! to o"serve a fre+uency !e#en!ence of the con!uctionlosses' This is referre! to as !ynamic con!uction losses'

A. Methodology

The !ynamic #ro#erties of the on&state voltage are stu!ie! un!er asinusoi!al current e*citation' The current an! voltage of the DHT are recor!e!'The instantaneous #ower loss is calculate! asp (t ) = i (t )u (t ). $ %

The IGBT con!uction losses are calculate! as the average of p (t ) asP =2 T _ T / 20 p (t )dt $.%where T is the #erio! time of the sinusoi!al current' The con!uction losses Pare calculate! at varying tem#eratures an! fre+uencies an! are com#are! amongthe !ifferent test o" ects' The test circuit shown in 6ig' 11 is use!' It consists oftwo half "ri!ges connecte! to a series&resonant tan/' The switches T1 3D1 an! T23D2 are use! to initiate an oscillation in the resonant tan/' The switch T4 3D4serves as the DHT an! is continuously in the on&state' The on&state voltage U CEan! the econ!ucte! current I E of T4 3D4 are recor!e!' The switch T3 3D3 iscontinuously in the off&state' As !efine! "y $1% an! $4%( E is use! to control theam#litu!e of the current an! the resonant tan/ $ L an! C% !etermines thefre+uency'


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6ig' 11' E*citation of resonant tan/' Tr1 I E $,- A3!iv%( Tr4 U CE $4 53!iv%( an! time -'4 ms3!iv'

1,

6our !ifferent metho!s to measure u CE (t ) have "een evaluate!'1% Direct measurement( on the IGBT chi#'

4% Direct measurement( through the gate% In!irect measurement( i!entification of L S "y a current ram#'

.% In!irect measurement( i!entification of L S "y an oscillating circuit'


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Fig. 12. Equivalen !i"!ui #$ a %al$-&"i'ge IGBT (#'ule in!lu'ing ) "a* in'u! an!e)

1

Fig. 1+. Si(,li$ie' !i"!ui .

The etho!s 1 an! 4 aim for a measurement of u CE (t )( notinclu!ing the voltage !ro# of L S , while etho!s an! . com#ensate forL S in the #ost#rocessing of the recor!e! !ata'

1) Direct Measurement, on the IGBT-Chi ! The #ower mo!ule


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is o#ene!( as shown in 6ig' 1 $a%( an! a !e!icate! voltage #ro"e is use! tomeasure the voltage !irectly on the chi#( as shown in 6ig' 1 $"%' The

"on!ing #a!s at the surface of the chi# an! the co##er foil to which thechi# is sol!ere! are use! as measurement #oints' The silicone gel( which

#rotects the !ifferent chi#s insi!e the mo!ule( is #enetrate! in or!er toma/e contact' This metho! gives e*cellent measurement results( "ut it also!rastically re!uces the "loc/ing ca#a"ility an! the relia"ility of the !evice'

The result of the measurement is shown in 6ig' 1 ' The voltageuCE1$t% is measure! at the #ower terminals of the mo!ule( while uCE4$t%is measure! !irectly on the chi#' The voltage uLs $t% is calculate! as the!ifference of uCE1$t% an! uCE4$t%' As shown in 6ig' 14( uLs $t% is lea!ing

"y :-J' 0ence( the #arasitic im#e!ance is in!uctive an! the in!uctance LSis !etermine! "y LS K uLs34Mf NE

where f is the fre+uency( NE is the #ea/ value of iE $t%( an! uLs is the #ea/ value of uLs $t%' 4% Direct easurement( Through the GateConnections An analysis of the layout of the o#ene! !evice( use!in etho! 1( yiel!s that the in!uctances LSE1 an! LSC4 in 6ig' 1. aresmall' 1?

A!!itionally( the DHT is continuously on which im#lies that the gatecurrent is constant an! very low $ 1 mA%' Therefore( the gate connectionse1 an! e4 in 6ig' 1- can "e use! to #ro"e uCE$t%' The result is shown in6ig' 1 ' The voltage uCE $t% is measure! at the connections e1 an! e4( asshown in 6ig' 1.( of the mo!ule'

% In!irect easurement( I!entification of LS "y a Current am# The testcircuit( shown in 6ig' 11( is change! "y shorting the ca#acitor C( as shownin 6ig' 1 '

;hile /ee#ing T. continuously con!ucting( the turn O of T1 a##lies E

across the in!uctor L( resulting in a current ram# with constant rate&of&risedi 3dt = i _ 0 ( through T4 ' Turning&off T1 forces the current to commutate toD2 ( which i!eally ma/es the current to freewheel at a constant am#litu!edi/dt = 0 '


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6ig' 1 ' Estimation of L s ( ste# in di"dt ' Tr1 i E (t ) $,- A3!iv%( Tr4 u CE (t ) $1 53!iv%( an! , s3!iv '

Thus(a ste# change of the rate&of&rise of the current is o"taine!' This

results in a corres#on!ing ste#&change in the IGBT forwar! voltage # CE

(as a conse+uence of the voltage !ro# across L S ' 0ence( L S is calculate! asfollows

L S =U CE /i 0 6ig' 1, shows the oscillograms of etho! ' As in!icate! "y the figure(the #recision of the rea!ing of # CE is not very high' The two main causesfor the inaccuracy are the switching oscillations an! the !ynamic 1:

saturation of u CE (t )' Conse+uently( the accuracy of the estimation of L S iscom#ara"ly low'

$) Indirect Measurement, Identification of L S %y an&scillating Circuit!By shorting T2 $see 6ig' 1:%( an! a!!ing a snu""er ca#acitor C S ( thecircuit shown in 6ig' 41$a% is forme!' A##lying a gate #ulse to T3generates a current ram# in the in!uctor L' A!!itionally an oscillationthrough C S is initiate!'

6ig' 1?' Sim#lifie! circuit( snu""er oscillation' $a% Test circuit' $"% E+uivalent commutation circuit


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6ig' 1:' Device A( #I characteristic' Tr1 4, C an! Tr4 14, C 41

6ig' 4-' Device C( #I characteristic' Tr1 4, C an! Tr4 14, C '

snu""er resonance to !etermine the stray in!uctance LCs of the snu""er circuit(given "y $?%' The ca#acitance CS of the snu""er circuit ismeasure! "y means ofan im#e!ance analy)er' The thir! ste# involves the measurement of HCE for!ifferentIGBT mo!ules "y means of etho! .( using $ % to calculate LS from the

#arameter values of the snu""er circuit an! the #erio! time of the oscillations'

C' easurements The on&state voltage is recor!e! using the test circuit shownin 6ig' 11' The am#litu!e of the current is /e#t constant at 1,- A for allmeasurements' The measurements are #erforme! at three !ifferent fre+uencies$?',( -( an! 1-. /0)% as well as at two !ifferent unction tem#eratures T $4,JC an! 14, JC%' A!c e+uivalent of the on&state voltage versus current isrecor!e!' Hsing the circuit of 6ig' 1:' The voltage is measure! at the slow !ecayof the current !uring the freewheeling through D4 ( as shown in 6ig' 4-' 6igs'4 an! 4. show the results for DevicesA an! C( res#ectively' It is o"serve! thatDevice C has a significantly lower on&state voltage' 6ig' 4, shows the influenceof thetem#erature at the three !ifferent fre+uencies for Device A' 6igs' 4 an!


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4? com#are the on&state voltage at the !ifferent fre+uencies $inclu!ing the !ce+uivalent%( at $a% 4, JC an! $"% 14, JC( for Devices A an! C( res#ectively' Inor!er to com#are HCE at !ifferent fre+uencies the *&a*is is scale! as the angleof the sinusoi!al current' 6rom the figures( it can "e o"serve! that the on&state

voltage is increase! at higher fre+uencies' It is also o"serve! that the highertem#erature $14, JC% gives a higher on&state voltage(com#are! to the lowertem#erature 4, C 44

'

6ig' 41' Device A( HCE ( Tr1 4,JC an! Tr4 14, JC' $a% ?', /0)'

Com#aring the two !evices yiel!s that Device A has a longer timeconstant for the con!uctivity mo!ulation #rocess com#are! to DeviceC' It is also shown that for "oth !evices the time constant is increase!at the higher tem#erature'

As an e*am#le( the lagging of the con!uctivity mo!ulation isevi!ent in 6ig' 4 $a% when com#aring Tr1 $!c e+v% an! Tr4 $?', /0)%'Before :- $-2:- %( Tr4 shows a higher on&state voltage( while

"eyon! :- $:-21 - %( the on&state voltage islower com#are! to Tr1'During the initial :- ( the current isincreasing( the time constant ofthe con!uctivity mo!ulation #revents the !evice to fully saturate'During the latter #art of the con!uction interval( there is an e*cess of charges com#are! to the

actual current( which results in a lower on&state voltagecom#are! tothe stationary case Tr1 $!c e+v%'


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4

6ig' 44' Device A( HCE ( Tr1 !c e+v( Tr4 ?', /0)( Tr - /0)( an! Tr. 1-. /0)' $a% T 4,JC' $"% T 14, JC'

6rom the analysis of 6igs' 4- an! 41( it a##ears that( for a risingcurrent $ di E (t )/dt > 0%( the time nee!e! to fully !evelo# thecon!uctivity mo!ulation causes an a!!itional voltage !ro#'In a similarway( for a !ecreasing current $ di E (t )/dt < 0%( the voltage !ro# isre!uce! !ue to the e*cess of charges' At the lower fre+uency ?', /0)(

these two effects are "alancing an! !o not a!! significantly to thelosses' 0owever( at the highest fre+uency 1-. /0)( the increase of theon&state voltage !uring the first #art of the sinusoi!al current isheavily !ominating over the !ecrease !uring the latter #art' As aconse+uence( the #ower loss is significantly higher at the highestfre+uency' 0ence( the measurement #roves the fre+uency !e#en!encyof the on&state losses( referre! to as !ynamic con!uction losses' 4.'


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It is also evi!ent( from a com#arison of Devices A an! C( that thefre+uency res#onse is !ifferent among the !evices' The o#erationaltem#erature of the chi# also affects the fre+uency res#onse'

C' (esults

The IGBT con!uction losses P have "een !etermine! using$4%' 6ig' 41 shows the resulting losses for the !ifferent test !evices inTa"le I '

The losses are #resente!( for each !evice( at two !ifferentfre+uencies ?', an! - /0)( an! at two !ifferent tem#eratures 4, C an! 14, C';hen analy)ing 6ig' 4 ( it is evi!ent that all!evices havea higher con!uction loss at the higher fre+uencycom#are! to the lower one' This is vali! for low tem#erature aswell as for high tem#erature' It is also o"serve! that( for all!evices( the loss increase is higher at the higher tem#erature' It isalso o"serve! that for some Devices E an! 6( the con!uction losseshave negative tem#erature !e#en!ence' The con!uction losses!ecrease at higher tem#eratures' This is ty#ical for 7T !evices 84.9'

4,


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6ig' 44' Device C( U CE ( Tr1 !c e+v( Tr4 ?', /0)( Tr - /0)( an! Tr. 1-. /0)' $a% T j 4, C' $"%T j 14, C

6ig' 4 ' IGBT con!uction losses 1 ?', /0) 4, JC( 4 - /0) 4, JC( ?', /0) 14, JC( an! . -/0) 14,JC'

4


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IGBT mo!ules( the stan!ar! !eviation of the losses was 4'?.@(

while the stan!ar! !eviation of the loa! current was 1'-@' 0ence( it is theo#inion of the authors that the results of the measurements( on singles#ecimens( #resente! in this #a#er can "e generali)e! to the !ifferentIGBT !esigns' As !iscusse! in Section I5&A( any !ifference in the !elaysof the recor!e! signals i E (t ) an! u CE (t )( may contri"ute to the total errorof the #ower loss calculation' In the actual test setu#( the ma*imum valueof the !ifference is estimate! to 1-- ns( which at 1-. /0) corres#on!s to a

#hase angle = '? ' Conse+uently( the contri"ution to the total errormay "e estimate! from = * cos = * -':: ( which in!icates acontri"ution < -'4@' This is small com#are! to other error sources( such asthe accuracies of the #ro"es an! the vertical am#lifiers of the oscillosco#e'

Fig. 2 . IGBT l#))e) Devi!e A/ )#li' line an' Devi!e C/ '# e' line.

4? 5' C O CLHSIO


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Two !ifferent loss #henomena affecting the #erformance ofsoft&switching converters have "een !emonstrate! "y e*#eriments'The Dynamic tail-charge effect im#lies that at high fre+uencies( theturn&off losses !e#en! not only on the a"solute value of the current atturn off( "ut also on the !ynamics of the current #rior to the turn off(i'e'( the tail charge will not "e e+ual to )ero at a )ero&current turn off'

The Dynamic conduction losses !emonstrate the fre+uency!e#en!ency of the con!uction losses when con!ucting a sinusoi!alcurrent' It was foun! that the "est metho! to accurately !etermine theon&state voltage of the IGBT chi# is to measure the voltage at theterminals of the mo!ule an! com#ensate for the voltage !ro# of thestray in!uctance of the mo!ule' The stray in!uctance is i!entifie! "ythe use of an oscillating circuit( which is cali"rate! "y a !irectmeasurement of the on&state voltage on the IGBT chi#'

The two loss #henomena are conse+uences of thecon!uctivity mo!ulation lag of the IGBT' As this !e#en!s on theactual !esign an! the #ro#erties of the silicon layers( !ifferent IGBTsshow !ifferent "ehavior with res#ect to the !emonstrate! effects' The

#erforme! e*#eriments clearly in!icate that IGBTs of a mo!ern 7T!esign have the lowest losses in the investigate! series&resonantconverters'

4

AC0NO LEDG ENT


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The authors woul! li/e to than/ ' Ba/ows/i for sharinghis !ee#/nowle!ge in theory an! !esign of #ower semicon!uctors' Theywoul! also li/e to than/ ' Linner for his contri"utions to the #owerloss measurements' They woul! also than/ to ' Al Sun!oo/ for

"eing of great hel# with the e*#erimental arrangements an! S' Salamifor his wor/ on the !ata #ost #rocessing'

4:

E6E E CES


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819 T' T' Song( 0' ;uang( 0' Chung( S' Ta#hui( an! A' Ioinovici( =Ahighvoltage I+++ Trans' o er +lectron' ( vol' 4 ( no' ,( ##' 4.1124.4-( Se#'4-- '

8 9 C' ' Bingham( U' A' Ang( ' 7' 6oster( an! D' A' Stone( =Analysis an!control of !aul&out#ut LCLC resonant converters with significant lea/agein!u/tance(> I+++ Trans' o er +lectron' ( vol' 4 ( no' .( ##' 1?4.21? 4( '

4-- '8.9 ' A' Carr( B' ow!en( an! ' C' Bal!a( =A three&level full&"ri!ge)erocurrentswitching converter with a sim#lifie! switching scheme(> I+++ Trans' o er

+lectron' ( vol' 4.( no' 4( ##' 4:2 ( 6e"' 4--:'

8,9 W' ;ang( 6' C' Lee( G' 0ua( an! D' Boro evic( =A com#arative stu!y of switching losses of IGBTs un!er har!&switching( )ero&voltage&switching( an!)ero&current&switching(> in roc' I+++ +*C ( 1::.( ##' 11: 214- '

8 9 G' Ivens/y( A' Wats( an! S' Ben&Uaa/ov( = e!ucing IGBT losses in I+++ Trans' Ind' +lectron' ( vol' . ( no' 1( ##' ?2 ?.( 6e"' 1:::'

8?9 O' De"lec/er( A' oretti( an! 6' 5alleXe( =Com#arative stu!y ofsoftswitche!isolate! DC&DC converters for au*iliary railway su##ly(> I+++ Trans' o er

+lectron' ( vol' 4 ( no' ,( ##' 441 2444:( Se#' 4-- '

8 9 D' 5' Go!/e( W' Chatter ee( an! B' G' 6ernan!es( =Threehase threelevel( soft switche!( #hase shifte! 7; DC&DC converter for high #ower a##lications(> I+++ Trans' o er +lectron' ( vol' 4 ( no' ( ##' 141.2144?(

ay 4-- ' -8:9 'Boarage( S' Tiwari( S' Bhar!wa ( an! S'Wotaiah( =Afull&"ri!geDC&DC

converter with )ero&voltage&switching over the entire conversion ranges(> I+++ Trans' o er +lectron' ( vol' 4 ( no' .( ##' 1?. 21?,-( ul' 4-- '


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81-9 ' L' Steigerwal!( =A com#arison of half&"ri!ge resonant converter to#ologies(> I+++ Trans' o er +lectron' ( vol' ( no' 4( ##' 1?.21 4( A#r'1: '

8119 A' 6' ;ituls/i an! ' ;' Eric/son( =Stea!y&state analysis of the seriesresonant converter(> I+++ Trans' eros ' +lectron' *yst' ( vol' AES&41( no' (

##' ?:12?::( ov' 1: ,'

8149 ' Wrishnaswami an! ' ohan( =Threeort series&resonant DC&DCconvereter to interface renewa"le energy sources with "i!irectional loa! an!energy storage #orts(> I+++ Trans' o er +lectron' ( vol' 4.( no' 1-( ##' 44 :2 44:?( Oct' 4--:'

81 9 A' Bucher( T' Duer"aum( D' Wue"rich( an! ' Schmi!( =Consi!erationof con!uction losses for the series resonant converter "y means of sim#lee*tension to the S7A a##roach(> in roc' + + +MC .//0 ( ##' 4..2 4.:'

81.9 ' a/ao/a( S' gai( U' ' Wim( U' Ogino( an! U' ura/ami( =The stateof the art #hase&shifte! in roc'

+*C 1 . ( ##' 42?-

81,9 5' 5lat/ovic( ' ' Schutten( an! ' L' Steigerwal!( =Au*iliary sreiesresonant converter A new converter for high&voltage( highower a##lications(>in 7roc' 7ESC 1:: ( ##' .: 2.::'

81 9 6' Cavalcante an! ' Wolar( =Design of a , /; high out#ut voltageseries#arallel resonant DC&DC converter(> in 7roc' 7ESC 4-- ( ##' 1 -?21 1.'81?9 7' ansta!( 0'&7' ee( an! ' Linner( =A novel control strategy a##lie!to the series loa!e! resonant converter(> #resente! at the E7E( Dres!en(Germany( 4--,'

81 9 ' A' artin& amos( A' ' 7ernia( ' Dia)( 6' uno( an! ' A' artine)(=7ower su##ly for a high&voltage a##lication(> IEEE Trans' 7ower Electron'(vol' 4 ( no' .( ##' 1 - 21 1:( ul' 4-- ' 181:9 ' Biela( H' Ba!stue"ner( an! ' ;' Wolar( =Design of a ,&/;( 1&H( 1-

/;3!m resonant DC&DC converter for telecom a##lications(> IEEE Trans'7ower Electron'( vol' 4.( no' ?( ##' 1?-121?1-( ul' 4--:'


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84-9 '&6' Chen( '&U' Chen( an! T'& ' Liang( =Stu!y an! im#lementation of asingle&stage current&fe! "oost 76C converter with IEEE Trans' 7ower Electron'( vol' 4 ( no' 1( ##' ?:2 ( an'

4-- '

8419 ' Uamashita( T' U' Uama!a( S' Hchi!a( 0' Uamaguchi( an! S' Ishi)awa(=A relation "etween !ynamic saturation characteristics an! tail current of non&

#unchthrough IGBT(> in 7roc' Conf' ec' 1st IAS Annu' eeting( 1:: ( ##'1.4,21. 4'

449 ' Uamashita( T' Uama!a( ' Soe ima( 0' Uamaguchi( an! 0' 0aruguchi(=A relation "etween !ynamic saturation characteristics an! tail current of non&

#unchthrough IGBTs $II%YEffective switching loss estimation(> in Conf' ec'4n! IAS Annu' eeting( 1::?( ##' 14 ?214?4'

84 9 A' Elasser( 5' 7arthasarathy( an! D' A Torrey( =A stu!y of the internal!evice !ynamics of #unch&through an! non #unch&through IGBTs un!er )ero&current switching(> IEEE Trans' 7ower Electron'( vol' 14( no' 1( ##' 412 ,(

an' 1::?'

84.9 5' W' Whanna( The Insulate! Gate Bi#olar Transistor $IGBT% Theory an!Design' 7iscataway( IEEE 7ress( 4-- ' ISB -&.?1&4 .,&?'

84,9 B' ' Baliga( 6un!amentals of 7ower Semicon!uctor Devices' ew Uor/S#ringer&5erlag( 4-- ' ISB :? &-& ?&.? 1 &-'

84 9 A' 7etterteig( ' Lo!e( an! T' ' Hn!elan!( =IGBT turn&off losses for har!switching an! with ca#acitive snu""ers(> in 7roc' Conf' ec' 4 th IAS Annu'

eeting( 1::1( ##' 1,-121,-?'84?9 ' ohan( T' ' Hn!elan!( an! ;' 7' o""ins( 7ower ElectronicsConverters( A##lications( an! Design' ew Uor/ ;iley( 1::,' ISB -&.?1&1.4- &,'

84 9 I' ;i! a a( A' Wurnia( W' Shenai( an! D' ' Divan( =Switching !ynamicsof IGBT s in soft&switching converters(> IEEE Trans' Electron Devices( vol' .4(no' ( ##' ..,2.,.( ar' 1::,'

484:9 0' 0' Li( A' Wurnia( D' Divan( an! W' Shenai( =0ighZtem#erature

turnoff#erformance of IGBTs in resonant converters(> in 7roc' IEEE 7ESC(1::,( ##' 4, 24, '


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8 -9 A' Bhalla( ' Gla!ish( an! G' Dolny( =Effect of IGBT switching !ynamicson loss calculations in high s#ee! a##lications(> IEEE Electron Device Lett'(vol' 4-( no' 1( ##' ,12, ( an' 1::-'

8 19 S' 6u ita( W' 0' 0ussein( S'Witamura( an! T'Uamaguchi( =Investigation onIGBT high&fre+uency #lasma e*traction transient time oscillation(> IEEE Trans'7ower Electron'( vol' 4.( no' ( ##' 1,?-21,? ( un' 4--:'

8 49 S' T' Wong( L'&W' 0gwen!son( ' Sweet( D' Wumar( an! E' ' S' arayanan( =Turn&off "ehavior of 1'4 /534, A 7T&CIGBT un!er clam#e!in!uctive loa! switching(> IEEE Trans' 7ower Electron'( vol' 4.( no' .( ##'11--211- ( A#r' 4--:'

8 9 ' ';arren( W' A' osows/i( an! D' ' 7erreault( =Transistor selection an!!esign of a 506 DC&DC #ower converter(> IEEE Trans' 7ower Electron'( vol'4 ( no' 1( ##' 4?2 ?( an' 4-- '

8 .9 6' Wlevelan!( =O#timum utili)ation of #ower semicon!uctors in high#ower high&fre+uency resonant converters for in!uction heating(> 7h'D' thesis( T H(Tai#ei( Taiwan( un' 4--1'

8 ,9 W' 6u ii( 7' Woellens"erger( an! ';' De Donc/er( =Characteri)ation an!com#arision of high "loc/ing voltage IGBTs an! IEGTs un!er har!& an! soft&switching con!itions(> IEEE Trans' 7ower Electron'( vol' 4 ( no' 1( ##' 1?42 1?:( an' 4-- '

8 9 A' Elasser( ' ' Schutten( 5' 5lat/ovic( D' A Torrey( an! '0'Wheraluwala( =Switching losses of IGBT un!er )ero&voltage an! )erocurrentswitching(> in 7roc' 7ESC 1:: ( ##' --2 -?'

8 ?9 D' B' Berning an! A' ' 0efner( =IGBT mo!el vali!ation for softswitchinga##lications(> IEEE Trans' In!' A##l'( vol' ?( no' 4( ##' ,-2 -( ar'3A#r'4--1'

8 9 S' A))o#ar!i( '& ' 5inassa( E' ;oirgar!( C'


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8.-9 ' 6rancis an! ' Sol!ano( =A new S 7S non #unch thru IGBT re#lacemosfet in S 7S high fre+uency a##lications(> in roc' +C .//2 ( 6e"':21 ( vol' II( ##' :, 2:,?'

8.19 0' 0us/en an! 6' Stuc/ler( =6iel!sto# IGBT with OS&li/e $tailless% turn&off(> in roc' I+++ I*D* ( A#r' 1.21?( 4-- ( ##' 2 .-'

8.49 0' Ta/ahashi( 0' 0aruguchi( an! T' Uama!a( =Carrier store! trenchgate "i#olar transistor $CSTBT% 2A novel #ower !evice for high voltagea##lication&(> in roc' I+++ I*D* 1 3 ( ##' .:2 ,4'

8. 9 D';' Green( W' 5' 5ershinin( ' Sweet( an! E' ' S' arayanan( =Ano!eengineering for the insulate! gate "i#olar transistorYA com#arative review(> I+++ Trans' o er +lectron' ( vol' 44( no' ,( ##' 1 ,?21 ( Se#' 4--?'

8..9 A' Wurnia( 0' Cherra!i( an! D' ' Divan( =Im#act of IGBT "ehaviour on!esign o#timi)ation of soft switching inverter to#ologies(> I+++ Trans'

Ind' l' ( vol' 1( no' 4( ##' 4 -24 ( ar'3A#r' 1::,'

8.,9 6' Wlevelan!( T' ' Hn!elan!( an! T' ogne( =IGBTs an! shott/y !io!esin high #ower high fre+uency a##lications(> #resente! at the E7E 1:::(Lausanne( Swit)erlan!'

8. 9 A' Wurnia( O' 0' Stielau( G' 5en/ataramanan( an! D' ' Divan( =Lossmechanisms In IGBT s un!er )ero voltage switching(> in roc' I+++ +*C (1::4( ##' 1-1121-1?'

.?9 '&L' Schanen( C' artin( D' 6rey( an! '& ' 7asterc)y/( =Im#e!ancecriterionfor #ower mo!ules com#arison(> I+++ Trans' o er +lectron' ( vol' 41( no' 1(

##' 1 24 ( an' 4-- '

8. 9 L' Uang an!;' G' 0' O!en!aal( = easurement&Base! metho! tocharacteri)e

#arasitic #arameters of the integrate! #ower electronics mo!ules(> I+++ Trans' o er +lectron' ( vol' 44( no' 1( ##' ,.2 4( an' 4--?'

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Documents

Ppt Document 1111