Plasma Processing and Synthesis of Materials IIIassets.cambridge.org/97815589/90791/frontmatter/...MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 190 Plasma Processing and

Plasma Processing and Synthesis of Materials III

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Cambridge University Press978-1-558-99079-1 - Materials Research Society Symposium Proceedings: Volume 190: Plasma Processing and Synthesis of Materials III: Symposium held April 17-19, 1990, San Francisco, California, U.S.A.Editors: Diran Apelian and Julian SzekelyFrontmatterMore information

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MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 190

Plasma Processing andSynthesis of Materials III

Symposium held April 17-19, 1990, San Francisco, California, U.S.A.

EDITORS:

Diran ApelianWorcester Polytechnic Institute, Worcester, Massachusetts, U.S.A.

Julian SzekelyMassachusetts Institute of Technology, Cambridge, Massachusetts, U.S.A.

IMIRIS1 MATERIALS RESEARCH SOCIETYPittsburgh, Pennsylvania






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Contents

PREFACE xi

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS xii

PART I: METALS & COMPOSITES PROCESSING

INTELLIGENT PROCESSING OF MATERIALS FOR PLASMA DEPOSITION 3H.P. Wang, E.M. Perry, and R.D. Lillquist

METHANE PLASMA SOURCE ION IMPLANTED TJ.-6A1-4V 11Jie Chen, J.R. Conrad, R.A. Dodd, and F.J. Worzala

FABRICATION AND EVALUATION OF PLASMA-SPRAYEDMICROLAMINATED THERMAL BARRIER COATINGS 17

A.M. Ritter, J.R. Rairden, and R.L. Mehan

LOW PRESSURE THERMAL DEPOSITION OF METAL MATRIXCOMPOSITES 23

T.N. Meyer, J.R. Auhl, A.I. Kahveci, S.A. Jones,and L.M. Angers

LOW PRESSURE INDUCTION PLASMA SPRAYING OF TITANIUM METALMATRIX COMPOSITES SCS-6/Ti6Al-4V AND SCS-6/Ti6Al-2Sn-4Zr-2Mo 29

H. Gigerenzer and A.J. Kumnick

MICROSTRUCTURE AND MECHANICAL PROPERTIES OF RF PLASMASPRAYED TITANIUM ALUMINIDE SHEET 39

J.A. Graves, S.J. Veeck, G.W. Wolter, andB.K. Zuidema

GRAIN SIZE EFFECTS IN PLASMA COLD-HEARTH WITHDRAWALMELTING 45

M.E. Schlienger, J.W. Sears, and R.C. Eschenbach

THE DEVELOPMENT OF DENSE PLASMA SPRAYED YTTRIA COATINGSON GRAPHITE 55

P. Diez, R. Smith, D. Apelian, R. Faron, andG. Regazzoni

A THEORETICAL STUDY OF PLASMA SPRAYING IN A HYBRID TORCH 63John W. McKelliget and Nagy El-Kaddah

PART II: PLASMA SYNTHESIS & SURFACE MODIFICATION

PLASMA GAS COMPOSITION AND PRESSURE EFFECTS ON THESINTERING OF STABILIZED ZIRCONIA 71

P. Kong and E. Pfender






SYNTHESIS OF ZIRCONIUM CARBIDE IN A TRIPLE TORCH PLASMAREACTOR USING LIQUID ORGANOMETALLIC ZIRCONIUM PRECURSORS 77

Z.P. Lu, T.W. Or, L. Stachowicz, P. Kong, andE. Pfender

COUNTER-FLOW LIQUID INJECTION PLASMA SYNTHESIS (CF LIPS)OF SPINEL FINE POWDERS 83

T.W. Or, Z.P. Lu, L. Stachowicz, P. Kong, andE. Pfender

OPTICAL EMISSION SPECTROSCOPY AND LASER DOPPLERVELOCIMETRY FOR AN RF THERMAL PLASMA CVD PROCESS 89

T. Ishigaki, Y. Moriyoshi, and I. Iwamoto

THIN FILM SYNTHESIS USING MINIATURE PULSED METAL VAPORVACUUM ARC PLASMA GUNS 95

X. Godechot, M.B. Salmeron, D.F. Ogletree,J.E. Galvin, R.A. MacGill, M.R. Dickinson,K.M. Yu, and I.G. Brown

NOVEL METHODS FOR DEPOSITION OF BORON CARBIDE FILMS 101J. Mazurowski, S. Baral-Tosh, G. Ramseyer,J.T. Spencer, Yoon-Gi Kim, and P.A. Dowben

EFFECT OF RF PLASMA ON SILICON NITRIDE DEPOSITIONFROM SiF4/NH3 GAS MIXTURES IN A HOT WALL REACTOR 107

C. Gomez-Aleixandre, O. Sanchez, and J.M. Albella

ONE STEP PREPARATION OF Y-Ba-Cu-0 SUPERCONDUCTINGFILMS BY THE RF THERMAL PLASMA CVD 113

H. Zhu, Y.C. Lau, and E. Pfender

PLASMA ENHANCED GLASS SURFACE MODIFICATION:STRUCTURE AND PROPERTIES 119

Xiaobo Zhou, R.A. Condrate, Sr., and P.F. Johnson

PHASE ANALYSIS IN PACVD DIAMOND FILMS VIA OXIDATIONKINETICS 125

William E. Brower, Jr., Robert Bauer, andNick M. Sbrockey

DIAMOND SYNTHESIS IN A 50 kW INDUCTIVELY COUPLEDATMOSPHERIC PRESSURE PLASMA TORCH 131

T.G. Owano, C.H. Kruger, and M.A. Cappelli

EFFECT OF SURFACE PREPARATION AND THERMOPLASTIC ADHESIVESTRUCTURE ON THE ADHESION BEHAVIOR OF PEEK®/GRAPHITECOMPOSITES 137

Tae-Ho Yoon and James E. McGrath

THE PROGRESS OF PLASMA ANODIZATION AND ITS APPLICATIONS 143Li Qiong and Xu Jingfang

RF DISCHARGE MODELING THROUGH SOLUTIONS TO THE MOMENTSOF THE BOLTZMANN TRANSPORT EQUATIONS 149

M. Meyyappan, T.R. Govindan, and J.P. Kreskovsky






PREPARATION OF YBaCuO SUPERCONDUCTING THIN FILMS BYMICROWAVE PLASMA ENHANCED OMCVD 155

Kenji Ebihara, Tomoaki Ikegami, Seiji Kanazawa,and Masanobu Shiga

TWO-DIMENSIONAL STRUCTURE OF REACTIVE SILANE PLASMAS INTHE PRESENCE OF CROSSED MAGNETIC AND ELECTRIC FIELDS 161

Hiroshi Fujiyama, H. Kawasaki, Y. Matsuda,and N. Ohno

PART III: MODELING AND DIAGNOSTICS

MICROSTRUCTURES AND MECHANICAL PROPERTIES OF Ni-BASEALLOYS CONSOLIDATED BY VACUUM PLASMA SPRAY (VPS)PROCESS 169

Z.Z. Mutasim and R.W. Smith

HEAT TREATMENT OF ZIRCONIA POWDERS WITH DIFFERENTMORPHOLOGIES UNDER THERMAL PLASMA CONDITIONS 175

M. Vardelle, A. Vardelle, A. Denoirjean, andP. Fauchais

COHERENT ANTI-STOKES RAMAN SPECTROSCOPIC MEASUREMENT OFAIR ENTRAINMENT IN ARGON PLASMA JETS 184

J.R. Fincke, R. Rodriguez, and C.G. Pentecost

PARTICLE VELOCITY AND TEMPERATURE HISTORIES IN A PLASMAPLUME: A COMPARISON OF MEASUREMENTS AND PREDICTIONS 191

C. Trapaga, R. Westhoff, J. Szekely, J. Fincke,and W.D. Swank

A COMPARISON OF THE EXPERIMENTALLY MEASURED ANDTHEORETICALLY PREDICTED TEMPERATURE PROFILES FOR ANARGON PLASMA JET DISCHARGING INTO A NITROGENENVIRONMENT 199

A.H. Dilawari, J. Szekely, R. Westhoff,B.A. Detering, and C.B. Shaw, Jr.

BEHAVIOR OF ALUMINA PARTICLES IN ATMOSPHERIC PRESSUREPLASMA JETS 207

J.R. Fincke and W.D. Swank

A MATHEMATICAL REPRESENTATION OF TRANSPORT PHENOMENAINSIDE A PLASMA TORCH 213

R. Westhoff, A.H. Dilawari, and J. Szekely

SIMULATION OF THERMAL BARRIER PLASMA-SPRAYED COATINGS 221Mauro Ferrari, John H. Harding, andMaurizio Marchese

•INFLUENCE OF THE ARC CHAMBER DESIGN AND OF THESURROUNDING ATMOSPHERE ON THE CHARACTERISTICS ANDTEMPERATURE DISTRIBUTIONS OF Ar-H2 AND Ar-He SPRAYINGPLASMA JETS 227

Ph. Roumilhac, J.F. Coudert, and P. Fauchais

*Invited Paper

vii






PART IV: PLASMA PROCESSING OF ELECTRONICMATERIALS - PART I

'DEVICE QUALITY' SILICON DIOXIDE LAYERS BY LOWTEMPERATURE PECVD PROCESSES 241

J. Haase, R. Ferretti, and J. Pille

A COMPARISON OF CH4:H2 AND C2H6:H2 MORIE OF GaAs 247V.J. Law, G.A.C. Jones, M. Tewordt, and H. Royal

ASSESSMENT OF SURFACE DAMAGE OF GALLIUM ARSENIDE DUE TOREACTIVE ION ETCHING 255

M.S. Puttock, H. Thomas, D.V. Morgan, U. Rossow,D.R.T. Zahn, W. Richter, K.P. Hilton, andJ. Woodward

PLASMA PARAMETER AND FILM QUALITY IN THE ECR-PLASMA-CVD 261Y. Nakayama, M. Kondoh, K. Hitsuishi, andT. Kawamura

THE USE OF LANGMUIR PROBE MEASUREMENTS TO STUDYREACTION KINETICS IN REMOTE PLASMA-ENHANCED CHEMICALVAPOR DEPOSITION OF SILICON 267

B. Anthony, T. Hsu, L. Breaux, R. Qian,S. Banerjee, and A. Tasch

STUDIES OF PLASMA ETCHING OF HIGH TEMPERATURESUPERCONDUCTING THIN FILMS 273

M.R. Poor and C.B. Fleddermann

HYDROGEN PASSIVATION OF Si(100) BY REMOTE HYDROGENPLASMA TREATMENT 279

T. Hsu, B. Anthony, L. Breaux, R. Qian,S. Banerjee, A. Tasch, S. Lin, and H.L. Marcus

MAGNETRON REACTIVE ION ETCHING OF GaAs: PLASMACHEMICAL ASPECTS AND SURFACE DAMAGE STUDIES 285

G.F. McLane, M. Meyyappan, M. Taysing-Lara,M.W. Cole, C. Wrenn, L. Yerke, and D. Eckart

PLASMA ETCHING OF TUNGSTEN SILICIDE STRUCTURES USINGNF3-HALOCARBON ETCHANTS 291

John G. Langan, Jeffrey M. Parks, Mark A. George,and Ralph J. Jaccodine

PLASMA ETCHING OF InP AND RELATED MATERIALS INELECTRON CYCLOTRON RESONANCE CH4/H2/Ar DISCHARGES 297

S.J. Pearton, U.K. Chakrabarti, A.P. Kinsella,A.B. Emerson, D. Johnson, and C. Constantine

PLASMA ETCHING OF POLYSILOXANE BASED SOG FILMS 303Nicole M. Rutherford and Satish K. Gupta

viii






PART V: PLASMA PROCESSING OFELECTRONIC MATERIALS - PART II

AXIAL TEMPERATURES AND ELECTRON DENSITIES IN A FLOWINGCASCADED ARC 311

J.J. Beulens, M. de Graaf, G.M.W. Kroesen,and D.C. Schram

INCIDENCE ANGLE DEPENDENCE OF THE SILICON NEAR-SURFACECONTAMINATION CAUSED BY CF4 REACTIVE ION BEAM ETCHING 317

C. Lejeune, J.P. Grandchamp, J.P. Gilles, andE. Collard

THE DRY DEVELOPMENT PROCESS OF TMSDEA-TREATEDPHOTORESIST BY USING OXYGEN-HELIUM PLASMA IN REACTIVEION ETCHING MODE 323

Kwang-Ho Kwon, Sun Jin Yun, Byung-Sun Park,and Young-Jin Jeon

LOW TEMPERATURE RF PLASMA ANNEALING USING A NH3~N2 GASMIXTURE 329

K. Aite, F.W. Ragay, J. Middelhoek, and R. Koekoek

OPTICAL PLASMA MONITORING OF Y-Ba-Cu-0 SPUTTER TARGETTRANSIENTS 335

J.D. Klein and A. Yen

LOW TEMPERATURE SYNTHESIS OF POLYCRYSTALLINE DIAMONDBY MICROWAVE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION 341

R. Ramesham, C. Ellis, T. Roppel, D.A. Jaworske,and W. Baugh

AUTHOR INDEX 349

SUBJECT INDEX 351

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS 355











Preface

This is the third in the series of MRS Symposia that we hadthe privilege to organize in the field of plasma processing; thefirst was held in Boston in 1983 and the second in Anaheim in1987. On reflecting on the contents of these volumes, it is ofinterest to trace the development or perhaps more appropriately,the explosive growth of this field, both in terms of theapplications and the sophistication of the techniques that arebeing employed.

In 1983, a key function of the symposium was tutorial, withthe aim to acquaint the materials community with the basicconcepts of plasma phenomena and to stress the potential utilityof plasmas as an exciting tool in materials processing. Thesecond volume in 1987 has provided impressive evidence ofwidespread plasma use, particularly in the preparation ofcoatings and in the processing of electronic materials togetherwith significant growth in our understanding of fundamentalphenomena relating to plasma systems.

The present volume is a further impressive testimony to thegrowth and development of the plasma processing field, withparticular emphasis on the processing of composite materials,plasma synthesis, the surface modification of materials—allgreatly aided by much more sophisticated diagnostic techniquesand mathematical analysis.

We are indebted to our session chairs: Dan Backman (GE);Ron Smith (Drexel University); Steve Reichman (Wyman-Gordon);and John Haggerty (MIT) for their contributions, both inorganizing their particular sessions and in reviewing themanuscripts. We acknowledge with appreciation theircooperation, assistance, and arduous efforts.

Lastly, we thank the MRS staff who are the best! Withouttheir efforts and assistance there is no way we could have putall this together.

Diran ApelianJulian Szekely

February 1991






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Recent Materials Research Society Symposium Proceedings

Volume 157—Beam-Solid Interactions: Physical Phenomena, J.A. Knapp, P. Borgesen,R.A. Zuhr, 1989, ISBN 1-55899-045-3

Volume 158—In-Situ Patterning: Selective Area Deposition and Etching, R. Rosenberg,A.F. Bernhardt, J.G. Black, 1989, ISBN 1-55899-046-1

Volume 159—Atomic Scale Structure of Interfaces, R.D. Bringans, R.M. Feenstra,J.M. Gibson, 1989, ISBN 1-55899-047-X

Volume 160—Layered Structures: Heteroepitaxy, Superlattices, Strain, andMetastability, B.W. Dodson, LJ. Schowalter, J.E. Cunningham,F.H. Pollak, 1989, ISBN 1-55899-048-8

Volume 161—Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films,Quantum Well Structures and Dilute Magnetic Systems, J.F. Schetzina,FJ. Bartoli, Jr., H.F. Schaake, 1989, ISBN 1-55899-049-6

Volume 162—Diamond, Boron Nitride, Silicon Carbide and Related Wide BandgapSemiconductors, J.T. Glass, R.F. Messier, N. Fujimori, 1989,ISBN 1-55899-050-X

Volume 163—Impurities, Defects and Diffusion in Semiconductors: Bulk and LayeredStructures, J. Bernholc, E.E. Haller, DJ. Wolford, 1989,ISBN 1-55899-051-8

Volume 164—Materials Issues in Microcrystalline Semiconductors,P.M. Fauchet, C.C. Tsai, K. Tanaka, 1989, ISBN 1-55899-052-6

Volume 165—Characterization of Plasma-Enhanced CVD Processes, G. Lucovsky,D.E. Ibbotson, D.W. Hess, 1989, ISBN 1-55899-053-4

Volume 166—Neutron Scattering for Materials Science, S.M. Shapiro, S.C. Moss,J.D. Jorgensen, 1989, ISBN 1-558991054-2

Volume 167—Advanced Electronic Packaging Materials, A. Barfknecht, J. Partridge,C-Y. Li, C.J. Chen, 1989, ISBN 1-55899-055-0

Volume 168—Chemical Vapor Deposition of Refractory Metals and Ceramics,T.M. Besmann, B.M. Gallois, 1989, ISBN 1-55899-056-9

Volume 169—High Temperature Superconductors: Fundamental Properties and NovelMaterials Processing, J. Narayan, C.W. Chu, L.F. Schneemeyer,D.K. Christen, 1989, ISBN 1-55899-057-7

Volume 170—Tailored Interfaces in Composite Materials, C.G. Pantano, E.J.H. Chen,1989, ISBN 1-55899-058-5

Volume 171—Polymer Based Molecular Composites, D.W. Schaefer, J.E. Mark, 1989,ISBN 1-55899-059-3

Volume 172—Optical Fiber Materials and Processing, J.W. Fleming, G.H. Sigel,S. Takahashi, P.W. France, 1989, ISBN 1-55899-060-7

Volume 173—Electrical, Optical and Magnetic Properties of Organic Solid-StateMaterials, L.Y. Chiang, D.O. Cowan, P. Chaikin, 1989,ISBN 1-55899-061-5

Volume 174—Materials Synthesis Utilizing Biological Processes, M. Alper, P.D. Calvert,P.C. Rieke, 1989, ISBN 1-55899-062-3

Volume 175—Multi-Functional Materials, D.R. Ulrich, F.E. Karasz, A.J. Buckley,G. Gallagher-Daggitt, 1989, ISBN 1-55899-063-1

Volume 176—Scientific Basis for Nuclear Waste Management XIII, V.M. Oversby,P.W. Brown, 1989, ISBN 1-55899-064-X

Volume 177—Macromolecular Liquids, C.R. Safinya, S.A. Safran, P.A. Pincus, 1989,ISBN 1-55899-065-8

Volume 178—Fly Ash and Coal Conversion By-Products: Characterization, Utilizationand Disposal VI, F.P. Glasser, R.L. Day, 1989, ISBN 1-55899-066-6






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 179—Specialty Cements with Advanced Properties, H. Jennings, A.G. Landers,B.E. Scheetz, I. Odler, 1989, ISBN 1-55899-067-4

Volume 180—Better Ceramics Through Chemistry IV, C.J. Brinker, D.E. Clark,D.R. Ulrich, BJ.J. Zelinsky, 1990, ISBN: 1-55899-069-0

Volume 181—Advanced Metallizations in Microelectronics, A. Katz, S.P. Murarka,A. Appelbaum, 1990, ISBN: 1-55899-070-4

Volume 182—Polysilicon Thin Films and Interfaces, B. Raicu, T.Kamins,C.V. Thompson, 1990, ISBN: 1-55899-071-2

Volume 183—High-Resolution Electron Microscopy of Defects in Materials, R. Sinclair,D.J. Smith, U. Dahmen, 1990, ISBN: 1-55899-072-0

Volume 184—Degradation Mechanisms in III-V Compound Semiconductor Devices andStructures, V. Swaminathan, S.J. Pearton, O. Manasreh, 1990,ISBN: 1-55899-073-9

Volume 185—Materials Issues in Art and Archaeology II, J.R. Druzik, P.B. Vandiver,G. Wheeler, 1990, ISBN: 1-55899-074-7

Volume 186—Alloy Phase Stability and Design, G.M. Stocks, D.P. Pope, A.F. Giamei,1990, ISBN: 1-55899-075-5

Volume 187—Thin Film Structures and Phase Stability, B.M. Clemens, W.L. Johnson,1990, ISBN: 1-55899-076-3

Volume 188—Thin Films: Stresses and Mechanical Properties II, W.C. Oliver,M. Doerner, G.M. Pharr, F.R. Brotzen, 1990, ISBN: 1-55899-077-1

Volume 189—Microwave Processing of Materials II, W.B. Snyder, W.H. Sutton,D.L. Johnson, M.F. Iskander, 1990, ISBN: 1-55899-078-X

Volume 190—Plasma Processing and Synthesis of Materials III, D. Apelian, J. Szekely,1990, ISBN: 1-55899-079-8

Volume 191—Laser Ablation for Materials Synthesis, D.C. Paine, J.C. Bravman, 1990,ISBN: 1-55899-080-1

Volume 192—Amorphous Silicon Technology, P.C. Taylor, M.J. Thompson,P.G. LeComber, Y. Hamakawa, A. Madan, 1990, ISBN: 1-55899-081-X

Volume 193—Atomic Scale Calculations of Structure in Materials, M.A. Schluter,M.S. Daw, 1990, ISBN: 1-55899-082-8

Volume 194—Intermetallic Matrix Composites, D.L. Anton, R. McMeeking, D. Miracle,P. Martin, 1990, ISBN: 1-55899-083-6

Volume 195—Physical Phenomena in Granular Materials, T.H. Geballe, P. Sheng,G.D. Cody, 1990, ISBN: 1-55899-084-4

Volume 196—Superplasticity in Metals, Ceramics, and Intermetallics, M.J. Mayo,J. Wadsworth, M. Kobayashi, A.K. Mukherjee, 1990, ISBN: 1-55899-085-2

Volume 197—Materials Interactions Relevant to the Pulp, Paper, and Wood Industries,J.D. Passaretti, D. Caulfield, R. Roy, V. Setterholm, 1990,ISBN: 1-55899-086-0

Volume 198—Epitaxial Heterostructures, D.W. Shaw, J.C. Bean, V.G. Keramidas,P.S. Peercy, 1990, ISBN: 1-55899-087-9

Volume 199—Workshop on Specimen Preparation for Transmission ElectronMicroscopy of Materials II, R. Anderson, 1990, ISBN: 1-55899-088-7

Volume 200—Ferroelectric Thin Films, A.I. Kingon, E.R. Myers, 1990,ISBN: 1-55899-089-5

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