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Physics of Semiconductor Devices BM30A1700, 3 - 6 ECTS cr Professor, Ph.D. Tuure Tuuva, [email protected] Aims To provide the student with an in-depth knowledge of semiconductor devices and their operation. Contents Structure, operation and physics of semiconductor devices. Teaching methods Special assignment. Assessment Pass/fail, special assignment 100%. Course Material Sze, Physics of Semiconductor Devices.

Physics of Semiconductor Devices BM30A1700, 3 - 6 ECTS cr Professor, Ph.D. Tuure Tuuva, [email protected] Aims To provide the student with an in-depth

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Page 1: Physics of Semiconductor Devices BM30A1700, 3 - 6 ECTS cr Professor, Ph.D. Tuure Tuuva, tuure.tuuva@lut.fi Aims To provide the student with an in-depth

Physics of Semiconductor DevicesBM30A1700, 3 - 6 ECTS crProfessor, Ph.D. Tuure Tuuva, [email protected]

Aims To provide the student with an in-depth knowledge of semiconductor devices and their operation. Contents Structure, operation and physics of semiconductor devices. Teaching methods Special assignment. Assessment Pass/fail, special assignment 100%. Course Material Sze, Physics of Semiconductor Devices.

Page 2: Physics of Semiconductor Devices BM30A1700, 3 - 6 ECTS cr Professor, Ph.D. Tuure Tuuva, tuure.tuuva@lut.fi Aims To provide the student with an in-depth

Form groups of 2 to 4 persons

Repair presentations of detailed structure, physics and operation of a semiconductor device

Every one has to present part of the work

Introduce your group by sending names and the device by email to [email protected]

Page 3: Physics of Semiconductor Devices BM30A1700, 3 - 6 ECTS cr Professor, Ph.D. Tuure Tuuva, tuure.tuuva@lut.fi Aims To provide the student with an in-depth

Example devices: Diode

• Basic physics,

• Depletion region

• IV characteristics

• CV characteristics

• Leakage current, leakage current with defects, middle band gap states

• Applications

Page 4: Physics of Semiconductor Devices BM30A1700, 3 - 6 ECTS cr Professor, Ph.D. Tuure Tuuva, tuure.tuuva@lut.fi Aims To provide the student with an in-depth

Photodiode

• Diode basics

• Quantum efficiency/Spectral Response compare to GaAs, Ultra Violet response, explain using physics

• Signal, Noise and Signal/Noise S/N

• Applications

Page 5: Physics of Semiconductor Devices BM30A1700, 3 - 6 ECTS cr Professor, Ph.D. Tuure Tuuva, tuure.tuuva@lut.fi Aims To provide the student with an in-depth

Avalance Photodiode

• Photodiode basics

• Avalance gain, physics explanation

• Signal, Noise and Signal/Noise S/N

• Applications

Page 6: Physics of Semiconductor Devices BM30A1700, 3 - 6 ECTS cr Professor, Ph.D. Tuure Tuuva, tuure.tuuva@lut.fi Aims To provide the student with an in-depth

Other devices

Radiation detector

CCD

MOS FET

Solar cell

Others