Upload
others
View
2
Download
0
Embed Size (px)
Citation preview
Photovoltaic structuresby chemical deposition
P. K. Nair, Harumi Moreno, Sarah Messina, David Avellaneda, M. T. S. Nair
Centro de Investigación en EnergíaUniversidad Nacional Autónoma de México
Temixco, Morelos 62580, Mé[email protected]
Jose Campos, Oscar GomezDaza, Ma. Luisa Ramon G.
Pilkington-Toledo OH, BHEL-Gurgaon
Funding: CONACYT, Mexico; DGAPA-UNAM
Solace2008, Kochi
Outline
Just how many solar cell technologies..?
Chemical deposition and scope for new solar cell technologies
Chemically deposited photovoltaic structures
Prospects
Just how many solar cell technologies..?
1950 1960 1970 1980 1990 2000
5
10
15
20
25E
ffici
ency
(%)
Year
crystalline Siamorphous Sinano TiO2CIS/CIGSCdTe
>25 SHV
HW
LHW
MW
LW
FW
Nathan S. Lewis, www.caltech.edu
Just how many solar cell technologies..?
Worst day insolation map (kWh/m2/day ) PV sellers’ strategic web map
Just how many solar cell technologies..?
6 Boxes at 3.3 TW each; Nathan S. Lewis, www.caltech.edu
Just how many solar cell technologies..?
Just how many solar cell technologies..?Semicond. Mexican
Production (2004)
William W. Porterfield, Inorganic Chemistry: a united approach, Academic 1993 San Diego, p. 9.
Ag (3,000 ton)
www.inegi.gob.mx
Abundance: Cd, 0.1 ppm; Te, 0.005 ppm; In, 0.05 ppm; Ga,15 ppm; Ru, 0.0001ppm
At system efficy. of 10%, for 100,000 TWh/yr PV electricity
Solar cell Mater. req. Total req.
Total req/ resources
CdTe (1.5 µm) 4.7 g/m2 of Te 2,400,000 m.tons
110
CuIn0.75Ga0.25Se2 (2 µm) 2.9 g/m2 of In 1,400,000 m.tons
650
Potential to reduce materials exists: only 0.5 µm of CIGS and 1.0 µm of CdTeare needed to absorb 90% of the photons
B. A. Andersson, et al, Energy, 23 (1998) 407 – 411; Energy Policy 28 (2000) 1037-1049
Just how many solar cell technologies..?
A Statement of Understanding
• Photovoltaic technologies meeting the future demand for photovoltaic modules would complement each other.
• There is room for developing distinct technologies making use of local/regional raw materials and appropriate technologies to satisfy local need.
Chemical depositionscope for new solar cell
technologies
Chemical deposition – by flotation
Optimization of: 1. composition of bath mixture
2. quantity of bath per surface area of the substrate
3. duration and temperature of deposition
4. post deposition processing and/or multilayer deposition
Chemical deposition – solar radiation control and low-efficiency solar cells..
End use saving 40%, PV gen 5%
a great step forward!
Tvis 20%, Tsol 13%, Rsol 16%, Asol 71%
Heat transfer - G. Alvarez, et al: Solar Energy 78 (2005) 113; Mechanical - J. O. Aguilar, et al: Surf. Coat. Technol. 200(2005) 2557
Chemical deposition – by immersion
Chemical deposition – scope for solar cells..
980 W/m2
180 W/m2
Chemical deposition – scope for low efficiency solar cells..
www.sunwize.com grid-tieD. E. Carlson talk, 2006
Create comfort space with a solar roof; the value added is welcome!
Then 5% PV/solar control roof too has a role to play!
chemical deposition:scope for low efficiency solar cells
PV cells inside cellular plastic sheets – no lamination or
support structures
Sheet area: 15 sheets x 1.5 square meter: 22.5 sq mPV power @ 5% efficiency ≈ 1 kWe
And we also just created 22.5 sq m of valuable comfort zone underneath!
Hu, Nair, PET: J. Cryst.Growth 152(1995)150; Nair et al, Polyethersulfone: Thin Solid Films, 401(2001) 243; J. Cardoso et al, polyimide: Semicond Sci. Technol. 16 (2001) 123
solar cells from 100,000 production plants- a possibility?
Task force : (i) Transparent conductors, (ii) Buffers and windows, (iii) Absorbers (iv) Contacts, sealing and encapsulation
Chemically deposited photovoltaic structures
Chemically deposited semiconductor thin films…
CdS direct ~ 2.45 eVZnS direct ~ 3.7 eVZnSe direct ~ 2.7 eV
CdSe direct ~ 1.7 - 2.0 eVSb2S3 direct ~ 1.7 - 1.8 eVSnS direct ~ 1.6 eV
CuSe, Cu2-xSe direct ~ 2.1 – 2.3 eV; indirect, ~ 1.2 - 1.4 eV
CuS, Cu1.8S, Cu1.96S direct, ~ 1.55 - 1.4 eV
Bi2S3 direct ~ 1.4 – 1.5 eVSb2Se3 indirect? ~ 1 – 1.2 eVTl2S direct ~ 1.12 eV, Bi2Se3 direct ~ 1.08-1.06 eV Ag2S direct ~ 1 eVPbS direct ~ 0.4 – 0.7 eV PbSe direct ~ 0.6 eV(?)
CuSbS2, Cu3SbS4, AgSbSe2, Cu3BiS3, Cu4SnS4, Cu2SnS3,
TlSbS2, TlSbS2
P. K. Nair, et al, Sol. Energy Mater. Sol. Cells, 52, 313 (1998) Gary Hodes: Chemical Solution Deposition of Semiconductor Films,
Marcel Dekker 2003
Chemically deposited photovoltaic structures..
0.5 1.0 1 .5 2. 0 2.5 3.0 3.5 4.0102
103
104
105
106
CdS(cub)2.45 eV
Sb2(S/Se)
3
1 eV
Sb2 S3 1.7 eV
Optical Absorption Coeff ic ients of Chemically Deposited Thin Filims
PbS0.6 eV
ZnS3.45 eV
ZnO3.4 eV
CdS( hex)2.6 eV
SnS(cub)1.75 eV
Bi2S3 1.6 eV
α (c
m)-1
hυ (eV)
95% abs, 300 nm
For quantum size effects...G. Hodes, Phys. Chem. Chem. Phys. 9(2007) 2181-2196
Optical Conversion Efficiency: (i) photon absorption and e-h generation;(ii) Separation of e-h across the depletion region (iii) collection and work
Optical
Effic. %
Optical band gap Eg(eV)
Carrier multiplication at hν > 2Eg and super efficiencies ..? G. Nair, M. Bawendi, Phys. Rev. B 76, 081304(R) (2007)
Chemically deposited photovoltaic structures…
SnO2:F-CdS-SnS(A)-CuS-AgCdS (100 nm) - 0.1 M cadmium nitrate,1 M sodium citrate,
ammonia (aq), 1M thiourea,; 80 oC, 3h; predominantly hexagonal; photoconductive with conductivity σ~ 10-3 – 10-2 (Ω cm)-1, can be doped n-type; Eg ~ 2.6 eV
SnS - (Bath A) (100 nm)
CuS – 0.5 M CuCl2, 3.7 M triethanolamine, 30% NH3 (aq),1 M NaOH1 M thiourea; 30 oC, 30 min - 1 h; covellite (hexagonal); p-type conductivity, σ ~ 103 (Ω cm)-1; Eg indir. ~ 1.55 eV
315 oC in 300 mTorr Nitrogen
Avellaneda, Nair, Nair, Thin-Film Compound Semiconductor Photovoltaics—2007, MRS. Symp. Proc. Volume 1012 (2007), 1012-Y12-29 (on line)
20 30 40 50 600
255075
100
2 θ (deg)
SnS- herzenbergite PDF# 39-0354
a)
(%)
X-ra
y in
tens
ity(r
elat
ive)
b)
c)
0255075
100
(222
)
(311
)
(220
)
(200
)Zinc Blende (a = 5.7911)
(111
)
Structural data on SnS thin films
XRD patterns of a) acetone bath, b)acetic acid bath, ZB as prepared, c)SnS ZB annealed in N2, 1h 300 mTorr, 350ºC
Ref:E. C. Greyson, et al, “ Tetrahedral Zinc Blende Tin Sulfide Nanoand Microcrystals", Small 2 (2006) 368-371.
Anneal: Changes in Composition
a)SnS+Se annealed at 300 ºC, N2 along with the standard pattern of SnSe (PDF 38105); c)SnS+200 mg of S, annealed at 300 ºC, N2; d)SnS annealed in air at 400 ºC; e)SnS annealed in air at 550 ºC,
1,5 2,0 2,50
1
2
3
4
5
hν (eV)
(αhν
)2/3 (
103 c
m-2
/3eV
2/3 )
1.7 eV1.6 eV
After heating
Before heating
Optical properties of SnS ZB thin films annealed in air at differenttemperatures, and in the presence of Se, and S.
500 1000 1500 2000 25000
20
40
60
80
100
0
20
40
60
80
100
R %
W avelength (nm)
T %
550º 500º 400º 300ºC As prepared
Optical properties
SnO2:F/CdS-SnS(A)/CuS/Ag
-0,2 0,0 0,2 0,4
-1,5
-1,0
-0,5
0,0
0,5C
urre
nt (
10-4
A) Voltage (V)
Cu2SnS3
SnS
luz
CdS
Pintura de plata
SnO2:F
0.36FF6 kΩRp
300 ΩRs
200 mVVm
340 mVVoc
3.0A
3.7 mA/cm2Jm
6.0 mA/cm2Jsc
6.4 mA/cm2Jp
5x10-2 mA/cm2Jo
0.36FF6 kΩRp
300 ΩRs
200 mVVm
340 mVVoc
3.0A
3.7 mA/cm2Jm
6.0 mA/cm2Jsc
6.4 mA/cm2Jp
5x10-2 mA/cm2Jo
J = Jo [ exp(q(Voc-JRS)/AkBT) – 1] + [(V-JRS)/RP ] - JP
FF= Jm Vm/ Jsc Voc, Lambert W function used.
MRS Proc. Volume 1012, 2007, 1012-Y12-29
SnOSnO22:F /CdS/SnS(1,2)/:F /CdS/SnS(1,2)/CuSCuS--AgAg
-0.2 0.0 0.2 0.4 0.6 0.8
-7.7
-3.8
0.0
3.8
7.7
11.5
15.4
19.2
23.1 DARK LIGHT
J sc (m
A/cm
2 )
Voltage (V)
VOC = 380 mVJSC = 7.7 mA/cm2
Vm = 220 mVJm = 4.53 mA/cm2
FF = 0.34Eff. = 1%
SnS (1)SnS (2)
IL= 850 W/m2
SnO2:F
CuS
CdS
SnO2:F/CdS/SnS/PbS/Ag
-0,2 0,0 0,2 0,4
-8
-6
-4
-2
0
2
Voltage (V)
Cur
rent
(10-6
A)
0.27FF
70 kΩRp
90 ΩRs
160 mVVm
300 mVVoc
2.7A
0.247 mA/cm2Jm
0.484 mA/cm2Jsc
0.485 mA/cm2Jp
1x10-3 mA/cm2Jo
0.27FF
70 kΩRp
90 ΩRs
160 mVVm
300 mVVoc
2.7A
0.247 mA/cm2Jm
0.484 mA/cm2Jsc
0.485 mA/cm2Jp
1x10-3 mA/cm2Jo
-0,2 0,0 0,2 0,4
-2
-1
0
1
Cur
rent
(10-5
A)
Voltage (V)
0.28FF
22 k ΩRp
650 Ω (Area 1 mm2)
Rs
180 mVVm
320 mVVoc
2.2A
0.83 mA/cm2Jm
1.6 mA/cm2Jsc
1.7 mA/cm2Jp
1x10-3 mA/cm2Jo
0.28FF
22 k ΩRp
650 Ω (Area 1 mm2)
Rs
180 mVVm
320 mVVoc
2.2A
0.83 mA/cm2Jm
1.6 mA/cm2Jsc
1.7 mA/cm2Jp
1x10-3 mA/cm2JoSnS(A)
SnS(B)
PbS:1 M lead nitrate, 1 M NaOH, 1 M thiourea, 1 M triethanolamine; 40 oC, 2 h
Sb2S3 and Sb2SxSe3-x
Sb2S3 (i) Thin FilmsSbCl3, acetone, Na2S2O3
Sb2S3 (ii) Thin FilmsPotasium antim. tart,TEA, ammoniaThioacetamide
Selenium Thin FilmsNa2SeSO3 → Se (@ pH 4.5) 0 1 2 3 4 5 6 7 8 9 10
0
100
200
300
400
500
600
700
Growth curve of Sb2S3 at diferent temperature
Thic
knes
s (n
m)
Deposition duration (h)
-3 °C 1 °C 5°C 10 °C
(i) M T S Nair, et al J. Electrochem. Soc. 145 (1998) 2113(ii) O Savadogo, K C Mandal, Solar Energy Mater. 26 (1991) 117; (Se) K. Bindu, et al, Semicond. Sci. Technol., 17 (2002) 270.
Sb2S3-xSex formationx=0.75, calculated from XRD data
Eg direct 1.3 eV; orthorhombic: a =11.81 Å, b=11.47 Å, c=3.71 Åα , 105 cm-1 in the visible; conductivity, ≈ 10-8 Ω-1cm-1
XRD: Sb2S3 film heated in contact with Se film, 300oC
1 0 2 0 3 0 4 0 5 0
1 0 2 0 3 0 4 0 5 0
S b2S
xS e
3 -x
(211
)
(420
)
(301
)
(221
)
θ = 0 .5 °
(230
)
b )
θ = 1 .5 °
(420
)
Inte
nsity
[a.u
.]
2 θ [d e g re e s ]
S b 2S 3
P D F # 4 2 -1 3 9 3
(120
)
a )
(520
)
(301
)
(140
)
(211
)
(320
)
(200
)
(310
)
(220
)
(110
)
(130
)(3
10)
(120
)
(020
)
S b 2S e 3 P D F # 1 5 -0 6 8 1
(520
)
(321
)
Sb2S3 and Sb2(S/Se)3absorber thin films
1.5 2.0 2.5 3.00.0
5.0x103
hν [eV]
(αhν
)2/3 [e
V cm
-1]2/
3
Eg=1.76 eV
1.0 1.5 2.0 2.50
1000
2000
3000
4000
5000
1.0 1.5 2.0 2.50
1000
2000
3000
4000
5000
Eg=1,38
Se+Sb2S3 horneado a 300°C en N2
(αhν
)2/3 [e
Vcm
-1]2/
3
hν [eV]
Eg=1,31
Sb2S3 + Se horneado a 300°C en N2
(αhν
)2/3 [e
Vcm
-1]2/
3
hν [eV]
500 1000 1500 2000 25000
20
40
60
80
100500 1000 1500 2000 2500
0
50
Tran
smitt
ance
(%)
Wavelength (nm)
Sb2S3
Sb2(S/Se)3
Ref
lect
ance
(%)
Chemically deposited photovoltaic structures…
Sarah Messina, Nair, Nair Communicated 2007
Chemically deposited photovoltaic structures…
Sarah Messina, Nair, Nair Communicated 2007
Chemically deposited photovoltaic structures…
Sarah Messina, Nair, Nair Communicated 2007
500 1000 1500 2000 25000
20
40
60
80
100
TCO-CdS-(Sb2S
3+Se)-PbS
TCO-CdS-Sb2S
3+ Se
TCO-CdS-Sb2S
3
TCO-CdS
Tran
smitt
ance
[%]
Wavelength [nm]
SnOSnO22:F/:F/CdS(CubCdS(Cub, , hexhex)/Sb)/Sb22(S/Se)(S/Se)33/PbS/PbS--AgAg
0.0 0.2 0.4 0.6
-10
0
10 Ag PbS (200 nm)Sb
2(S/Se)
3 (250 nm)
CdS (cub) (90 nm)
SnO2:F
Voc=480 mVJsc=6 mA/cm2
FF= 0.38η= 1.4 %
Cur
rent
Den
sity
(mA/
cm2 )
Voltage (V)
0.0 0.2 0.4 0.6 0.8 1.0
-10
-5
0
5
10
15
AgPbS (200 nm)Sb2(S/Se)3 (500 nm)
CdS(hex) (200 nm)
Voc=640 mVJsc=7.5 mA/cm2
FF=0.26η=1.56%
Cur
rent
Den
sity
(mA
/cm
2 )Voltage (V)
Sb2(S/Se)3:D.Y. Suárez-Sandoval et al., J. Electrochem. Soc. 153 (2006) C91-C96.
SnO2:F/CdS/Sb2S3 /SnS/CuS-Ag
-0.2 0.0 0.2 0.4 0.6
-6.0x10-5
-4.0x10-5
-2.0x10-5
0.0
2.0x10-5
Curva I-V de la estructura FV SnO2-CdS-Sb2S3-SnS-CuS
Voc= 450 mVIsc = 40 µA; Jsc= 4 mA/cm2
A = 1 mm2
IL = 1 kW/m2
corr
ient
e [A
]
voltaje [V]
-0.6 -0.4 -0.2 0.0 0.2 0.4 0.6
-5.0x10-7
0.0
5.0x10-7
1.0x10-6
1.5x10-6
2.0x10-6
2.5x10-6
Curva IV de la estructura FV SnO2-CdS-Sb2S3-SnS-CuS
corr
ient
e [A
]
voltaje [V]
CdS
SnO2
SnS
IL=1000W/m2
silver print
Sb2S3
CuS
Voltage (V)
Voltage (V)
Current (A) Current (A)
Photoconductivity in CdS and PbS thin films
0 60 120 1801E-12
1E-11
1E-10
1E-9
1E-8
1E-7
1E-6
1E-5σ = 0.1 (Ωcm)-1
σ = 10-7 (Ωcm)-1
CdS (Cubic)
100 nm60 nm
bias 10 V
Cur
rent
(A)
Time (s)
-0.2 0.0 0.2 0.4 0.6
-1.0x10-5
0.0
1.0x10-5
2.0x10-5
3.0x10-5
4.0x10-5
5.0x10-5
6.0x10-5
-0.2 0.0 0.2 0.4
-2.0x10-5
-1.0x10-5
0.0
1.0x10-5
Curva IV de la estructura fotovoltaica CdS-PbS IL=1 kW/m2
Voc = 297 mVIsc = 13 µA; 0.3 mA/cm2 A = 4 mm2
IL = 1 kW/m2 tung-hal
Cor
rient
e (A
)
Voltaje (V)
+-
Lost generation cells...? CdS(100 nm)/ PbS(250nm)S. Watanabe, Y. Mita, J. Electrochem. Soc. 166 (1969) 989
dark Voltage (V)
Voltage (V)
Cur
rent
(A)
Cur
rent
(A)
dark
photo
n-CdS Eg : 2.5 eV dir - windowp-PbS Eg : 0.4 eV ind –absorb.
CdS: M.T.S. Nair, P.K. Nair, J.Campos Thin Solid Films 161 (1988) 21-34
PbS: P.K. Nair, M.T.S. Nair J. Phys. D: Appl. Phys 23 (1990) 150-155
Glass/plastic
SnO2:F/CdS(hex 100 nm)/PbS(250 nm)/Ag
-200 0 200 400 600 800 1000
-10
-5
0
5
10
15
20
J (m
A/cm
2 )
Voltage (mV)
Dark
-200 0 200 400 600
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0 Light
VOC = 0.5 VJSC = 2.3 mA/cm2
A = 1mm2
L = 850 W/m2J
(mA
/cm
2 )
Voltage (mV)
+-
SnO2:F
CdSPbS
850 W/m2
TCO-coated glass from Pilkington, Toledo,USA; BHEL, Gurgaon-India
-300 -200 -100 0 100 200 300 400 500 600
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
TCO-CdS(hexagonal)-Bi2S3-PbS
J SC
(mA
/cm
2 )
Voltaje (mV)
Oscuridad Iluminacion
VCA = 340 mVJCS = 10 mA/cm2
A= 1.3 mm2
SnOSnO22:F/:F/CdS(CubCdS(Cub, , hexhex)/)/BiBi22SS33 /PbS/PbS--AgAg
PbS
SnO2:F CdSBiBi22SS33
Chemically deposited photovoltaic structures..
-100 0 100 20 0 300 400 500
-8000
-6000
-4000
-2000
0
2000
-
24 mm 2
Ag + 200 nm
60 nm
PbS
SnO2:F
Bi 2S3
80 nmZnO-
B
A
A (1000 W/m2)V
OC = 2 20 mV
JSC
= 6.2 mA/cm2
B (3000 W/m2)V
OC = 300 mV
JSC
= 21 mA/cm2
I (µA
)
V (mV)
Prospects
Photo-accelerated chemical deposition
Nair, Nair on CdS: Solar Energy Mater 15 (1987) 431
Nair et al on PbS: J. Phys. D. Appl. Phys. 24 (1991) 1466; Adv. Mater. Optics Electr. 1 (1992) 117; Semicond. Sci. Technol. 7 (1992) 239
Nair et al on Bi2S3: J. Electrochem. Soc. 140 (1993) 1085
PbS: bluish purple on goldenArt work by
Adrian Oskamsunlight
Bi2S3: purple on golden golden on purple
Some Conclusions
Photovoltaic technologies meeting the future demand for photovoltaic modules would complement each other
There is room for developing distinct technologies making use of local/regional raw materials to satisfy local needs
Easy scale-up and low-capital intensive production are basic features of all-chemically deposited photovoltaic structures – promising for photovoltaic technology
Solace 2008, Kochi