Acta Physica Academiaz Scientiarum Hungaricae, Tomus 49 (1--3), p. 175 (1980)

PHOTOELECTRIC PROPERTIES OF ION-IMPLANTED SILICON

By

G. PET£ and T. LOHNER

CENTRAL RESEARCH INSTITUTE FOR PHu HUNGARIAN ACADEMY OF SCIENCE$ H-1525 BUDAPEST, I-IUNGARY

Abstract

The amorphous layer was formed on Si (111) surface by ion-impIantation of 2ssi+, 31p+ ions. The photoelectric properties of this amorphous layer were measured by 10,2 eV exciting photon energy and retarding field analyser. The surface contamination was checked by AES simultaneously.

The energy distribution curve of ion-implanted a-Si exhibits a very large secondary peak, structureless part towards higher energies and there is no observable edge at the high energy end of the spectrum.

The results for ion-imlolanted a-Si differ from the data presented in the literature for evaporated and cathode sputtered a-Si.

Acta Physica Acf~demiae Scientiarum Hungarice, e 49, 1980