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On the Design of an Antenna Switch in 28 nm FD-SOI CMOS Lars Landén, Mohammad Billal Hossain Acreo Swedish ICT AB, Norrköping, Sweden Ted Johansson Linköping University, Linköping, Sweden

On the Design of an Antenna Switch in 28 nm FD-SOI CMOSOn the Design of an Antenna Switch in 28 nm FD-SOI CMOS Lars Landén, Mohammad Billal Hossain Acreo Swedish ICT AB, Norrköping,

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Page 1: On the Design of an Antenna Switch in 28 nm FD-SOI CMOSOn the Design of an Antenna Switch in 28 nm FD-SOI CMOS Lars Landén, Mohammad Billal Hossain Acreo Swedish ICT AB, Norrköping,

On the Design of an Antenna Switch in 28 nm FD-SOI CMOS

Lars Landén, Mohammad Billal Hossain Acreo Swedish ICT AB, Norrköping, Sweden

Ted Johansson Linköping University, Linköping, Sweden

Page 2: On the Design of an Antenna Switch in 28 nm FD-SOI CMOSOn the Design of an Antenna Switch in 28 nm FD-SOI CMOS Lars Landén, Mohammad Billal Hossain Acreo Swedish ICT AB, Norrköping,

Introduction and Outline2

• EU project within ECSEL• Support ST Microelectronics with

demonstrations of feasibility of FD-SOI• Evaluations not yet finished

• 28 nm FD-SOI (UTBB)• Antenna switch design and consideration• Results from on-going work

Page 3: On the Design of an Antenna Switch in 28 nm FD-SOI CMOSOn the Design of an Antenna Switch in 28 nm FD-SOI CMOS Lars Landén, Mohammad Billal Hossain Acreo Swedish ICT AB, Norrköping,

3

UTBBvs.bulkCMOS

Page 4: On the Design of an Antenna Switch in 28 nm FD-SOI CMOSOn the Design of an Antenna Switch in 28 nm FD-SOI CMOS Lars Landén, Mohammad Billal Hossain Acreo Swedish ICT AB, Norrköping,

4

28 nm FD-SOI (STM)

Lg=24 nm, Tox=1.8 nm, Vsup=1.0 Vultra-thin silicon: 7 nmultra-thin buried oxide: 25 nm

High-k dielectricMetal-gate electrodeS/D: epitaxy raisedUndoped channelBulk/SOI integration

”High-voltage” design:Lg=150 nm, Tox=2.8 nm, Vsup=1.8 V (+10 %)

Page 5: On the Design of an Antenna Switch in 28 nm FD-SOI CMOSOn the Design of an Antenna Switch in 28 nm FD-SOI CMOS Lars Landén, Mohammad Billal Hossain Acreo Swedish ICT AB, Norrköping,

Limitations on the maximum voltage5

• Conventional bulk CMOS: many possible diode breakdowns to well and substrate.

• Scaled bulk CMOS: breakdowns approaching 4-5 V.• SOI: reduced problems with breakdown to the substrate,

possible to stack components.

Page 6: On the Design of an Antenna Switch in 28 nm FD-SOI CMOSOn the Design of an Antenna Switch in 28 nm FD-SOI CMOS Lars Landén, Mohammad Billal Hossain Acreo Swedish ICT AB, Norrköping,

• Broadband LNA• Capacitive feedback

LNA• Passive double

balanced resistive FET mixer

• LO distribution network

• PA core• RF switch

6

Design of RF-blocks on FD-SOI

BPF

BPF

LNA LPFADC

PADACHPF

LO

DSP

Antenna

T/RSwitch

Mixer

Mixer

GenericTDDradiofront-end

Page 7: On the Design of an Antenna Switch in 28 nm FD-SOI CMOSOn the Design of an Antenna Switch in 28 nm FD-SOI CMOS Lars Landén, Mohammad Billal Hossain Acreo Swedish ICT AB, Norrköping,

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Test chip = 1.5 x 2.2 mm2

Page 8: On the Design of an Antenna Switch in 28 nm FD-SOI CMOSOn the Design of an Antenna Switch in 28 nm FD-SOI CMOS Lars Landén, Mohammad Billal Hossain Acreo Swedish ICT AB, Norrköping,

RF antenna switch (SPDT)8

• 30 dBm• 50 Ohm• IL < 1 dB• Isolation > 30 dB• IM3 < -50 dBc• f = 1.9 GHz• 28 nm FD-SOI

CMOS

Page 9: On the Design of an Antenna Switch in 28 nm FD-SOI CMOSOn the Design of an Antenna Switch in 28 nm FD-SOI CMOS Lars Landén, Mohammad Billal Hossain Acreo Swedish ICT AB, Norrköping,

• 30dBm@50Ohm=>10Vp

• 6stackedtransistors(1.8V+10%),W/L=1mm/150nm

Switch design in Cadence9

Page 10: On the Design of an Antenna Switch in 28 nm FD-SOI CMOSOn the Design of an Antenna Switch in 28 nm FD-SOI CMOS Lars Landén, Mohammad Billal Hossain Acreo Swedish ICT AB, Norrköping,

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Pin = 30 dBm

Page 11: On the Design of an Antenna Switch in 28 nm FD-SOI CMOSOn the Design of an Antenna Switch in 28 nm FD-SOI CMOS Lars Landén, Mohammad Billal Hossain Acreo Swedish ICT AB, Norrköping,

By adding capacitors between the blocks, better phase balance was achieved

11

Page 12: On the Design of an Antenna Switch in 28 nm FD-SOI CMOSOn the Design of an Antenna Switch in 28 nm FD-SOI CMOS Lars Landén, Mohammad Billal Hossain Acreo Swedish ICT AB, Norrköping,

By adding capacitors between the blocks, better phase balance was achieved

12

Page 13: On the Design of an Antenna Switch in 28 nm FD-SOI CMOSOn the Design of an Antenna Switch in 28 nm FD-SOI CMOS Lars Landén, Mohammad Billal Hossain Acreo Swedish ICT AB, Norrköping,

13

PCBdesigninADS

Page 14: On the Design of an Antenna Switch in 28 nm FD-SOI CMOSOn the Design of an Antenna Switch in 28 nm FD-SOI CMOS Lars Landén, Mohammad Billal Hossain Acreo Swedish ICT AB, Norrköping,

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Chipandtestboard,readyformeasurements

• Currentlyunderevaluation

Page 15: On the Design of an Antenna Switch in 28 nm FD-SOI CMOSOn the Design of an Antenna Switch in 28 nm FD-SOI CMOS Lars Landén, Mohammad Billal Hossain Acreo Swedish ICT AB, Norrköping,

Problemwithtie-downdiodes15

• Tie-downdiodelimitsmaximumpower(voltage). Voltagepeakswillcausediodetoopentosubstrate.

• Teststructurespecific,notinintegratedswitch.

Page 16: On the Design of an Antenna Switch in 28 nm FD-SOI CMOSOn the Design of an Antenna Switch in 28 nm FD-SOI CMOS Lars Landén, Mohammad Billal Hossain Acreo Swedish ICT AB, Norrköping,

www.liu.se

This work has been performed as part of the ECSEL (formerly ENIAC) Joint Undertaking project PLACES2BE, funded in Sweden by VINNOVA and

ECSEL JU