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Numerical modeling of nonlinear optical properties in semiconductor diamond-shaped quantum ring with
elliptical hole
Santiago Ríosa 1, Juan Pablo Naranjoa 2 and Jairo H. Marína 3
a Escuela de Física, Grupo de Materiales Cerámicos y Vítreos, Universidad Nacional de Colombia, A.A 3840, Medellín Colombia
[email protected] 1, [email protected] 2, [email protected] 1
MotivationThe improvement in materials growth techniques have made possible practical realization of semiconductor quantum rings having different shapes. In this regard,
quantum rings with diamond-shaped an elliptical hole were recently reported [1]. Much of the present tremendous interest on these nanostructures have been
spurred by the possibility to obtain technological potential applications including opto-electronic devices and quantum architecture elements.
AFM Images of In(Ga)As/GaAs
QD’s [1]Real nano-holed system [1] Our QR model
Theoretical model- Electron’s Schrödinger Equation with effective-mass approximation for a GaAs QR, solved with finite element method:
−ℏ2
2𝑚∗∇2 + 𝑉𝑐𝑜𝑛𝑓 −
𝑖𝑒ℏ𝐵
2𝑚∗𝑥𝜕
𝜕𝑦− 𝑦
𝜕
𝜕𝑥+𝑒2𝐵2
8𝑚∗(𝑥2 + 𝑦2) + 𝑒𝐹𝑥 𝜓 𝑥, 𝑦 = 𝐸𝜓 𝑥, 𝑦 , 𝑉𝐶𝑜𝑛𝑓 = ቊ
0 , 𝑖𝑛𝑠𝑖𝑑𝑒 𝑡ℎ𝑒 𝑄𝑅∞ ,𝑜𝑢𝑡𝑠𝑖𝑑𝑒 𝑡ℎ𝑒 𝑄𝑅
- Calculation of the optical properties with the dipole moment density matrix formalism:
𝜀0𝜒1 𝜔 =
𝑁 𝑀212
𝐸21 − ℏ𝜔 − 𝑖ℏΓ12𝜀0𝜒
3 𝜔 = −𝑁 𝑀21
2𝐼𝜇𝑐
2𝑛𝑟 𝐸21 − ℏ𝜔 − 𝑖ℏΓ12∗
4 𝑀212
𝐸21 − ℏ𝜔 2 − 𝑖ℏΓ12 2−
𝑀22 −𝑀112
𝐸21 − 𝑖ℏΓ12 𝐸21 − ℏ𝜔 − 𝑖ℏΓ12
Δ𝑛 𝑖
𝑛𝑟𝜔 = 𝑅𝑒
𝜒 𝑖 𝜔
2𝑛𝑟2 , 𝑖 = 1,3 𝛼(𝑖) 𝜔 = 𝜔
𝜇
𝜀𝑟𝐼𝑚 𝜀0𝜒
𝑖 𝜔 , 𝑖 = 1,3 𝑀𝑖𝑗 = ⟨𝑖 −𝑒 Ƹ𝑟 𝑗⟩
1 2 3 4
Calculation of the relative refractive index changes under different electromagnetic fields’ and topological conditions
Magnetic field effect, varying the ratio b/a Magnetic field effect, varying the electric field
X-axis
linear
polarized
incident
photon
b/a = 2
b/a = 4,2
F = 10000 V/m
F = 20000 V/m
Circular
polarized
incident
photon
b/a = 2
b/a = 4,2
F = 10000 V/m
F = 20000 V/m
5
Calculation of the intraband optical absorption coefficient under different electromagnetic fields’ and topological conditions
Magnetic field effect, varying the ratio b/a Magnetic field effect, varying the electric field
X-axis
linear
polarized
incident
photon
b/a = 2
b/a = 4,2
F = 10000 V/m
F = 20000 V/m
Circular
polarized
incident
photon
b/a = 2
b/a = 4,2
F = 10000 V/m
F = 20000 V/m
6
Calculation of the optical properties for an eccentric QR
Magnetic field effect, varying ξx* Magnetic field effect, varying ξy
**
Relative refractive
index changes
ξx = 10 nm
ξx = 35 nm
ξy = 20 nm
ξy = 68 nm
Intraband absorption
coefficient
ξx = 10 nm
ξx = 35 nm
ξy = 20 nm
ξy = 68 nm
*Interaction with x-axis linear polarized photon
**Interaction with y-axis linear polarized photon
7
Comparisons with another alike research
Wave functions* Stark Effect Aharonov-Bohm Effect
(η = 0.75)
Aharonov-Bohm Effect
(η = 0.9)
Aharonov-Bohm Effect
(η = 1.0)
Elliptic
QR
[2]
Our
results
We show that under singular geometric conditions, our results tend to be very similar to previous results reported for concentric elliptical quantum ring [2].
*Electron’s wave functions for seven lowest energy levels, varying the electric field.
[1] Suwit Kiravittaya, Armando Rastelli and Oliver G Schmidt, Advanced quantum dot configurations, Rep. Prog. Phys. 72 (2009) 046502
[2] Doina Bejan, Cristina Stan, and Ecaterina C. Niculescu, Optical properties of an elliptic quantum ring: Eccentricity and electric field
effects, Optical Materials, 78 (2018) 207
References
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