NPS corporation · 2016-02-17 · RTO, RTN, RTA , Metal Alloy, Activation for Silicon Wafer and Sapphire Wafer RHP200 RHP620 RHP440 RHP150 Applications Product Overview. CONFIDENTIAL

Company Introduction

NPS corporation 2016

NPS corporation

www.nps-corp.co.kr NPS CorporationCONFIDENTIAL

Nature Person Skill

Growing with Harmonization of Nature, Person, and Skills

Value creation by Nature, Person, and Skills

Meaning


Customer

Satisfaction

Create

Value

Strengthen

Technical

competitiveness

Talent

Development

Technology

Development

To be a global leading manufacturer of equipment

for semiconductor, LCD, LED and Solar cell by providing reliable,

guaranteed, and affordable products and engineering services to our

customers.

Mission of NPS

Value

Spirit of NPSFrontier Spirit (개척 정신)

Professional Spirit (전문가 정신)

Venture Spirit (도전 정신)

As a growing, challenging, and enterprising company

Technology company that disseminate and propagate

in domestic and overseas market

A company that provides equipment and services for customer satisfaction

A Company that contribute to Semiconductor, LCD, LED and solar cell industry

Vision of NPS


Location

Company Name NPS Corporation (주식회사 앤피에스)

Founded March 28, 2007

Located #98-23, Dongtansandan 7-gil,

Dongtan-myeon, Hwaseong-si,

Gyeonggi-do, 445-811, Korea

CEO Mr. Won Sik Nam

Business ▣ Semiconductor Equipment Manufacture,Sales and Service

▣ Solar cell Equipment Manufacture,

Sales and Service

▣ LED Equipment Manufacture,

Sales and Service

▣ CVD Graphene Synthesis System RT CVD

Paid in Capital USD300,000.-

Employees 16


History

Mar. 2007 Established NPS Corporation in Suwon, Republic of Korea

Jun. 2007 Signed Agreement on developing RTP System for 8” silicon wafer

Aug. 2007 Developed Ceramic Coating Lamp for film(PET,PP,PI) surface treatment

Oct. 2007 Signed Agreement on developing magnetic levitation rotor system

Jan. 2008 Received order for RTP System(8”)- Vacuum Process

Feb. 2008 Received order for Plasma enhanced RTP System

Apr. 2008 Developed solar cell thin film thermal process system(CIGS)

Sept. 2008 Received order for solar cell thin film thermal process system(CIGS)

Oct. 2008Developed temperature controller and Power Controller against Larger size substrates

Feb. 2009 Received order for solar cell single crystal wafer RTP system

Jun. 2009 Received order for RTP System on 2” sapphire wafer processing

Mar. 2010 Received order for RTP System on 2” & 4” sapphire wafer processing

Apr. 2010 Received order for RTP System on 6” sapphire wafer processing

Jan. 2011 Received order GLA(Laser Annealing Equipement)

Mar. 2011Received order for solar cell thin film thermal process system(CIGS)Glass size : 370 x 470mm

May. 2011 Received order for Vertical LED application RTP System


History

Aug. 2011 Developed Bake furnace for susceptor cleaning(MOCVD application)

Sept. 2011 Received order for RT-CVD(Equipment for Graphene synthesis

Nov. 2011 Obtained CE certification for RHP620)

Mar. 2012RT-CVD(Graphene synthesis) related international application(USA) < 13/416,071>

Oct. 2012 Developed RTP System for MLCC baking

Nov. 2012 Obtained CE certification of Lamp Module, RHP300 for Wet bench

Nov. 2012Received order for the compatible RTP system for DUV-LED (2” & 6” Sapphire wafer)

Jan. 2013Received order for modification of 2” RTP System to 6” RTP System, NP Alloy

Mar. 2013 Received order for RHP640(Multi-chamber Process System)

Jul. 2013 Received order for Glass annealing System(300mm x 300mm)

Oct. 2013Modification of RT-CVD(Graphene Synthesis) for large sized Substrates(300 x 400)

Oct. 2013Obtained International patent from China for Susceptor unit and apparatus for processing substrates.

Dec. 2013 Obtained CE certification for RHP640(Multi-chamber Process System)


History

Jan. 2014 Obtained patent for Substrates Treatment Unit, Patent # 10-1355644

Feb. 2014 Obtained patent for Thermal Process System, Patent # 10-1362810

Mar. 2014 Received order for Lamp Module(RHP300) on Wet Clean Bench

May. 2014Received order for RT-CVD(Graphene Synthesis) for large sized Substrates(400 x 500)

Jul. 2014 Received oeder for RHP640(Multi-chamber Process System)

Nov. 2014Received order for RT-CVD(Graphene Synthesis) for large sized Substrates(500 x 600)


Organization

Total Employee : 16名

SalesGroup

Equipment Production Group

CEO(President)

Sales Team C/S TEAMMechanical

Design Team

ElectricalDesign Team

Software Development

R & D Center

Quality Management

ManagementGroup

Local Sales

Overseas Sales

Technical Support Quality Control

Functional Test

Management

Support

personnel

management

Accounting


RHP640V

LGIT_RHP640

RHP620 2011-01360

LGIT_RHP620

RHP300_PA Lamp Module

ZEUS

Authentication


Acquired “INNO-BIZ”

Certificate

Certified

Company R & D Center

Certified as a promising

enterprise from the Governor

of Gyeonggi-do

Selected as a promising

enterprise from the Governor

of Gyeonggi-do

Authentication


Business ITEM

Manufacture of RTP tool for mass production of LED

Manufacture of RTP tool for Semiconductor

Manufacture of RTP tool for Solar cell thin film

CVD Graphene Synthesis System RT CVD

Manufacture of RTP tool for Halogen Lamp module

(Silicon Wafer , LCD, LED and Solar cell)

Equipment Parts & Services

Ⅰ

Ⅱ

Ⅲ

Ⅳ

Ⅴ

Ⅵ

NPS corporation


I. Temperature Control Technology

II. High Performance Heater(Lamp) Technology

III. Optimized Process Chamber Design Technology

IV. Clean Environment Rotation Technology

V. Process Gas Supply Technology

VI. Vacuum Technology

We have the RTP Technology!!

Technological Capability

Rapid

Thermal

Processing


Technological Capability

Temperature Control Technology

Power Control Algorithm

Temp. Control Algorithm

Power Control Hardware

Temp. Control Hardware

High Performance Heater(Lamp) Technology

Lamp Array Design/Reflector Design

High Efficiency Lamp Design

Lamp Cooling Design

Easy Interface Design

Inside Volume Design

Process Gas Injection Design

Easy PM Design

Optimized Process ChamberDesign Technology

Wafer Rotation Technology

High Speed Rotation/ Particle Free

None Contact Rotate Transmission

High Temp. Resistance

Process Gas Supply Technology

N2,O2,Ar,N2O,NO,NH3,H2,HO,H2S,H2Se

Vacuum Technology

Oxygen Control

Pressure Control

Pump Integration, Pumping Line Design


Semiconductor, LED Market

RTO, RTN, RTA , Metal Alloy, Activation for Silicon Wafer and Sapphire Wafer

RHP200 RHP620 RHP440 RHP150

Applications

Product Overview


RHP470V RT-CVD RHP Infinity

Solar cell & Graphene Synthesis Market

Applications

Pre-heat for thin film solarcell ( Glass substrates )

Graphene synthesis

Big size Halogen heater module for Solar cell : RHP Infinity

Product Overview


Installed Base (2007 ~ 2010)

Date Application System Model Remark

Sept, 2007Activation, Alloy, Oxidation, Annealing

1(single) RTP800 8” wafer

Apr, 2008 Activation, Cleaning, Alloy 1(2chs) RTP820 8” wafer, ATM+VAC

Dec, 2008 Alloy, Annealing 1 RHP300 CIGS(□300 x 300)

Feb, 2009 Annealing 1 RHP600 Thin film solar cell

Jul, 2009 Annealing 1 RHP440 2” LED

Oct, 2009 Annealing 5 RHP440 2” LED

Dec, 2009 Activation, Annealing, grow 1 RHP600 Si Bulk Solar cell

May, 2010 Alloy, Annealing 1 RHP620 2” & 6” LED

Jun, 2010 Alloy, Annealing 2 RHP620 2” & 6” LED

Jul, 2010 Alloy, Annealing 2 RHP620 2” & 6” LED

Aug, 2010 Alloy, Annealing 2 RHP620 2” & 6” LED

Sept, 2010 Alloy, Annealing 1 RHP440 4” LED

Oct, 2010 Alloy, Annealing 2 RHP440 4” LED

Total 21


Date Application System Model Remark

Mar, 2011 Alloy, Annealing 1(Single) RHP470V CIGS(□370 x 470)

May, 2011 Alloy, Annealing 1 RHP620 6” Vertical LED

Sept, 2011 Annealing, Alloy 1 RHP350V Graphene synthesis

May, 2012 Wet Cleaning 1 RHP300 Single Spin Process

Aug, 2012 Wet Cleaning 4 RHP300 Single Spin Process

Dec, 2012 Wet Cleaning 1 RHP300 Single Spin Process

Jan, 2013 Annealing, Alloy 1 RHP150PLUS DUV LED

Feb, 2013 MLCC Baking(Firing) 1 RHP150 Rapid Baking for MLCC

Aug. 2013 Annealing, Alloy 1 RHP640A Multi-Chamber process

Dec. 2013 Annealing, Alloy 1 RHP400 Graphene systhesis

Aug.2014 Wet Cleaning 4 RHP300 Single Spin process

Oct.2014 Annealing, Alloy 1 RHP620AVP Dual Chamber Process

Nov.2014 Annealing, Alloy 1 RHP400 Graphene synthesis

Dec.2014 Wet Cleaning 4 RHP300 Single Spin Process

Total 23

Installed Base (2011 ~ 2014)

Equipment

Overview



RHP150

Application Specification

System features

RTO, RTA, RTN

High temperature anneal capability for slip-free

Low temperature process capability

2”~6”wafers for leading edge devices

Square-shaped silicon, Sapphire, glass up to 150mm

Qualified performance and reliability in production

Single or double layer lamp heating

(Linear type tungsten Halogen lamp arrayed)

Single point temperature measurement by non contact pyrometer

Lower CoO and CoC

Multilateral gas injection port

Manual loading/unloading wafer transfer

Production proven Equipment control software

Temperature control repeatability : < ±2.0℃

Process temperature range : 400℃ ~ 1100℃

Ramp up & down rate : 30℃/sec & 10℃/sec

Metal contamination : < 1+E10 atoms/㎠

RTO & RTA uniformity : < 1.0 %, 1 sigma

Pressure environment : ATM, vacuum is option

RHP150 is the rapid thermal processing system which can be used for processes of silicon, glass, and sapphire wafers

and a piece of each substrates. Our system adopted an optimized linear type lamp array in heater block(Double layer heater block)

and chamber that will achieve a precise temperature control with emissivity compensated pyrometers.

And its vacuum capability with quartz seal tube will enable to expand the process application without quartz window.

RHP150 use 2” to 6” substrates and square-shaped substrates up to 150mm size.


RHP150PLUS


System features

RTO, RTA, RTN



6”wafers for leading edge devices


Single wafer process chamber : 6” substrate

(Bulb shaped tungsten Halogen lamp arrayed)

2 points temperature measurement by non contact pyrometer

Lower CoO and CoC

Lamp seal cup configuration(no quartz window)

Multilateral gas injector

Wafer rotation module : Max. 150RPM

Manual loading/unloading wafer transfer


Temperature sensor accuracy : < ±0.5℃

Temp. control accuracy : < ±1.5℃




RTO & RTA uniformity : < ±3.0℃


RHP150PLUS is the rapid thermal processing system which can be used for processes of 6” silicon, glass,

and sapphire wafers.

Our system adopted an optimized bulb type lamp array in heater and chamber that will achieve a precise temperature control with

rotation module. And its vacuum capability with quartz seal cup will enable to expand the process application without quartz window.

RHP150PLUS use 6” substrates. In case of 2” wafer process, 2” process kit will be used.(Optional)


RHP200

RTO, RTA, RTN



200 mm wafers for leading edge devices





Particle : <10 ea, (over 0.065㎛, 3mm edge exclusion)


RTO & RTA uniformity : < 1.0 %, 1 sigma


Oxygen control: < 5 ppm


Dual chamber configuration as standard

(Single chamber is available)

Intelligent temperature control system

Real-time backside emissivity compensation

Excellent oxygen control during processing

Lower CoO and CoC


System features

RHP200 is the 200mm rapid thermal processing system which can be used for leading edge processes for memory

and logic devices. Our system adopted an optimized lamp arrayed heater block and chamber that will achieve a precise temperature

control with wafer rotation module, and emissivity compensated pyrometers.

And its vacuum capability will enable to expand the process application. With dual chamber and 2 or 3 cassette stage configuration, it

provides maximum productivity with smallest footprint. (Stand Alone or Backbone Configuration is available)


RHP440


System features

RTA, ITO annealing

Wide process temperature anneal capability

2” and 4” sapphire wafers for LED devices


Dual chamber configuration as standard

(Single chamber is available)

Dual lamp array heater block

Power control board and DSP controller

Temperature control T/C or Pyrometer

Multi-pocket wafer susceptor

ATM & Vacuum process



Temperature uniformity : < ± 10.0°C

Temperature control accuracy : < ± 1.5°C

Temperature sensor accuracy : < ± 0.5°C



Multi-pocket susceptor : 2” wafers : 16 pcs, 4” wafers : 4pcs

RHP440 is the rapid heating process system which can be used for ITO annealing process for 2” or 4”sapphire wafers.

Our system adopted a dual lamp array heater block and chamber that will achieve a precise temperature control . And its vacuum

capability will enable to expand the process application by quartz tube sealing structure(have no quartz window)

With a transfer robot, aligner, and 2 or 3 cassette stage configuration, it provides maximum productivity with smallest footprint.


RHP620


System features

RTA, ITO annealing

Wide process temperature anneal capability

6” sapphire wafers for LED devices

Single substrate process

Lamp housing (Have no reflector)

Lamp seal cup (Removed Quartz window)

Lamp housing lift module

Horizontal type filament Lamp (High efficiency)

Wafer rotation module

Multi gas injector

Temp control module

ATM & Vacuum process


Temperature control repeatability : < ±1.0%(wafer to wafer)

Temperature uniformity : < ± 2%(Within wafer)

Temperature control accuracy : < ± 1.5°C

Temperature sensor accuracy : < ± 0.5°C



Type of Lamp : Tungsten Halogen Lamp

Wafer rotation module : WRMM(Multipolar magnetizer)

RHP620 is the rapid heating process system which can be used for 6” Silicon wafer and 6” sapphire wafers.

Our system adopted an optimized lamp array heater block and chamber that will achieve a precise temperature control with

wafer rotation module and advanced PID control. And its vacuum capability will enable to expand the process application.

With a transfer robot, aligner, dual chamber and 2 or 3 cassette stage configuration,

it provides maximum productivity with smallest footprint.


RHP640AVP


System features

RTO, RTA, RTN



Up to 6”compound semiconductor

Sapphire wafer, silicon wafer


4 chambers configuration as standard

(Dual chamber is available)

Intelligent temperature control system

Top side shower head gas flow(Top to down gas flow)

Linear shaped Tungsten Halogen Lamp heating

Fully automated production System

Lower CoO and CoC



Temp. sensor accuracy : < ±0.1℃





RTO & RTA uniformity : < ±5.0℃

Pressure environment : ATM, Vacuum is option

Oxygen control: < 5 ppm

RHP640AVP is rapid thermal processing system which can be used for 6” compound semiconductor and silicon wafer.

Our fully automated system adopted an optimized lamp arrayed heater block and rotation module that will achieve a precise

temperature control with pyrometer which can control power ratio.

To maximized temperature control and a Multi-chamber process configuration,

it provides maximum productivity with smallest footprint.


RHP300V RT-CVD


System features

RTA

High temperature anneal capability

Metal catalyzed substrates

유효면적 Effective Size

RHP100V □100X100

RHP300V □250X300

RHP400V □300X400

RHP600V □500X600 / Optional RHP600V - LoadLock


Dual Lamp arrayed in Heater block(Left and Right)

(Linear shaped tungsten Halogen lamp arrayed)

Multi-point temperature measurement by thermocouples & pyrometer

(2~10 Points)

Lower CoO and CoC

Lamp seal tube configuration(no quartz window)

Vertical gas flow(Gas injector)

Manual loading/unloading Cu foil transfer




Temp. control repeatability : <±3℃



Temperature uniformity : < ±5.0℃

Pressure environment : 7x10-3 torr (35SLM Purge)

RHP300V RT-CVD is a special case of low pressure rapid thermal processing system.

A kind of Rapid Thermal Chemical Vapor Deposition in which a powerful halogen lamp field is used for rapid substrate heating

in an ultimate cold wall reactor, and reflector configuration.

And it is processing to catalyze CH4 at high temperature (1,000℃) and synthesize graphene on the metal catalyzed substrates(Cu foil).

RHP300V RT-CVD is designed to control ramp up and cool down time with ease.


RHP470V CIGS


System features

RTA



Metal & glass substrates,

Mo-coated glass substrates

□200 X 200 / □300 X 300 / □370 X 470


Dual Lamp arrayed in Heater block

(Linear shaped tungsten Halogen lamp arrayed)

3 points temperature measurement by thermo-couples

Lower CoO and CoC

Lamp seal tube configuration(no quartz window)

Top to bottom gas flow

Semi-auto transfer module







RTA uniformity : < ±5.0℃

Pressure environment : ATM, Vacuum

RHP470V CIGS is the rapid thermal processing system, and it is processing to anneal Mo coated glass substrate

which is a stacked of Cu, In, and Ga is sputter-deposited.

Then Selenisation takes place under H2Se(CIGS). To avoid the use of the toxic H2Se during selenisation,

Our Rapid Heating Process System can be used to obtain the highest efficiencies in S-containing atmosphere(either pure S or H2S).


RHP150MLCC


System features

RTA, MLCC baking(firing)


□230 x 230 x 2.5t Susceptor

Heater, chamber mono-block body

Lamp Cooling air nozzle

Double layer lamp heating

(Linear type tungsten Halogen lamp arrayed)

2 point temperature measurement by non contact pyrometer

Lower CoO and CoC

Gas Distribution Plate (Top to down gas flow)

Semi-auto transfer(Susceptor moving)







Pressure environment : ATM, Vacuum is option

RHP150MLCC is a special case of the rapid thermal processing system which can be used for firing of MLCC.

The system adopted an optimized linear type lamp array in heater block(Dual lamp heater block) and chamber that will achieve

a precise temperature control and high temperature firing of MLCCs(Multi-layer Ceramic Capacitors) to maintain the surface electric

property and to burn out binder. With quartz seal tube will enable to expand the process application without quartz window.

RHP150MLCC can be used for long time annealing or baking(firing)

Module Parts

Overview



RHP300PA

RHP300PA is a special case of the rapid thermal processing Lamp Module which can be used for

high temperature Single substrate Process.

To improve temperature uniformity in wafer more than 160℃ at Nitride Etching Process,

RHP300PA is integrated with Wet clean process equipment.


System features

Lamp heater module for SPM

Lamp heater module for H3PO4

Wet Etching Process

- 4chambers configuration

- 8chambers configuration.

Lamp housing

- Utility Interface panel

- Lamp, Lamp Socket, Safety Cover,

- Pyrometer

- Quartz Window

Temp control module

Bulb shaped Tungsten Halogen Lamp

Temperature Control Range : 0℃ ~ 300℃



Ramp up rate : 30℃/sec (Dry condition)


Pressure environment : ATM Process

Process Material : 300mm Silicon Wafer


RHP Infinity

RHP Infinity is a Lamp Heater Module for larger reaction chamber.

It is a substrate heating assembly in high vacuum reaction chamber, and the role of RHP Infinity is to provide a

temperature rise, steady-state, and down of substrate, especially it is used for pre-heating of substrate in PECVD System.

RHP Infinity has integrated with temperature controller, equipped our own DSP board and Power control board which is

showing stable temperature profile and thermal uniformity.


System features

Preheating for Si thin film Solar Cell

Lamp heating Technology for LCD and Solar Cell

Load Lock Heater for PECVD

Big Size Lamp Heater : Max 2000mm in Length

Single layer or Double layer Lamp Heating

(Linear Type Tungsten Halogen Lamp Array)

Temperature Control : Thermo-Couples or Pyrometer

Wall Side : Water Cooling

Dimension(mm) : W(614) x D(1500) x H(67)

Temperature Control Range : 450℃ ±3.5%

Ramp up rate : 2℃/sec

Pressure environment : ATM, VAC Process


Tungsten Halogen Lamp

Light can defined as an electromagnetic wave within the range of 100nm ~ 100,000nm(1mm). The boundaries for the spectrum for

visible light are 380nm-750nm ; IR radiation is divided up into Near-Wave, Intermediate-Wave, and Far-Wave Infrared Radiation.

Near-Wave is less than 2,000nm, Intermediate-Wave is between 2,000 and 4,000nm, and Far-Wave IR is above 4,000nm.

We can select the right electromagnetic waves based on each material’s radiation & absorption rate in order to produce the optimal

product of Halogen Lamp(Quartz Infrared Heater Lamp).

Application

Vacuum environment of Roll to Roll Equipment

Protect the surface of PE, PP, PET films

in process of using special infrared ray wavelength

System features

High Efficiency

The lamp envelope is of quartz glass. The compact bulb supplies a high luminous

output per watt. “Halogen Cycle” minimizes evaporation of the tungsten filament.

Stable Color Temperature

Thanks to the “Halogen Cycle” – a chemical reaction whereby evaporated tungsten

particles are returned to the filament – blacking of the bulb wall and thinning of

the tungsten filament are kept to a minimum. Light intensity and color temperature

remain stable throughout the life of the lamp.

Long Life

The “Halogen Cycle” guarantees extremely long lamp life. Service life is about

twice that of an ordinary incandescent lamp.

Heat Impact Resistance

With their quartz glass envelope, halogen lamps are much more resistance to heat

impact than ordinary incandescent lamps.

Warm up and Cool down

When quartz Infrared heater lamp turned on, it will be able to achieve its maximum

radiation(heat energy) in the shortest time when compared with other heaters.

The length of time it takes to achieve the maximum radiation output is

40-50seconds. It also has a rapid cool down when the lamp is switched off.

Bulb Type Lamp Linear Type Lamp


Temperature Controller

Temperature Controller(DSP board) What is DSP?

Digital signal processing (DSP) generally involves the mathematical processing of data, usually in the form of voltage level samples.

Computer processors and other electronics are often used to incorporate DSP into various applications. Digital Signal Processing(DSP)

is often used is the digital signal converter. It can convert signals from analog to digital formats, which is sometimes performed on

input signals to sample them and calculate a numerical value. RTP System of NPS is used to incorporate DSP board into temperature

control applications.

Application

System features

Gathering Information(Communication)

Medical, or Scientific Equipment , Semiconductor Equipment,

and other electronics

RTP Temp Ctr

PID Ctr

DSP Board :

- AI : 16channel (DC0~10V, 4~20mA), D I/O : 12channel

- Ether Net, CAN, RS232/485 communication protocole

- To extend AI/O channel through CAN communication

- Receive the analog signal(DC0~10V, 4~20mA) from Pyrometer

or, Thermocouples, then convert it to the digital formats, which was

applied to PID gain, and then send this signal

to Power controller via CAN or DAC IO Board


Thank you !!

Documents

NPS corporation · 2016-02-17 · RTO, RTN, RTA , Metal Alloy, Activation for Silicon Wafer and Sapphire Wafer RHP200 RHP620 RHP440 RHP150 Applications Product Overview. CONFIDENTIAL