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NOTES 27 March 2013Chapter 10 MOSFETS CONTINUED
MOS Structure Under Reverse Bias
2
- - - - - - - - - - - - +
-
Metal layer
Oxide layer
P-type
+ + + + + + + + + + + + +
n-type inversion layer
With large positive gate bias, there will be electrons at the interface between the oxide and semiconductor, which leads to formation of a thin n-type inversion layer
Threshold voltage VT: applied gate voltage required to achieve the threshold inversion
Voltage-Current Relationship of NMOS (1)
12
Voltage-Current Relationship of NMOS (2)
13
Saturation regionNonsaturation region
In the nonsaturation region:
In the saturation region:
2)(22 DSDSTGS
oxnD VVVV
L
CWI
2)(2 TGS
oxnD VV
L
CWI
Operation characteristics:
• No current through the gate oxide IG=0
• Current in the channel is due to drift rather than diffusion
Application: voltage controlled current source, analog switch
CMOS Technology
17
Complementary metal–oxide–semiconductor (CMOS)