Ver. 2008-10-31

NJG1135MD7

- 1 -

CDMA DUAL BAND LNA GaAs MMIC ! GENERAL DESCRIPTION ! PACKAGE OUTLINE

The NJG1135MD7 is a GaAs LNA MMIC designed for CDMA2000 dual band (Cellular and PCS) application. The NJG1135MD7 has LNA pass-through function to select high gain mode or low gain. The NJG1135MD7 achieved high IIP3 and low noise figure at the high

gain mode, and low current consumption at the low gain mode. An ultra-small and ultra-thin EQFN14-D7 package is adopted.

! FEATURES "Low voltage operation +2.8V typ. "Low control voltage operation +1.8V min.

[LNA high gain mode] "High input IP3 +10dBm typ. @ f=880MHz +8dBm typ. @ f=1960MHz "High gain +16dB typ. @ f=880MHz / 1960MHz "Low noise figure 1.4dB typ. @ f=880MHz / 1960MHz

[LNA low gain mode] "Low current consumption 30uA typ. "High input IP3 +19dBm typ. @ f=880MHz

+17dBm typ. @ f=1960MHz " Ultra-small and ultra-thin package EQFN14-D7 (Package size: 1.6x1.6x0.397mm typ., Lead and Halogen-Free)

! PIN CONFIGURATION

Pin Connection 1. GND 8. GND 2. VCTL2 9. GND 3. VCTL1 10. GND 4. GND 11. GND 5. RFOUT1 12. RFIN2 6. RFOUT2 13. RFIN1 7. GND 14. GND

! TRUETH TABLE “H”=VCTL(H), “L”=VCTL(L)

Cellular band PCS band VCTL1 VCTL2 LNA Bypass LNA Bypass

L L OFF ON OFF ON L H ON OFF OFF ON H L OFF ON ON OFF H H ON OFF ON OFF

Note: Specifications and description listed in this datasheet are subject to change without notice.

NJG1135MD7

(Top View)

1 2 3 4

5

6

7

891011

12

13

14

PCS

Cellular

NJG1135MD7

- 2 -

! ABSOLUTE MAXIMUM RATINGS (Ta=+25°C, Zs=Zl=50Ω)

PARAMETERS SYMBOL CONDITIONS RATINGS UNITS

Supply voltage VDD 5.0 V

Control voltage VCTL VCTL1, VCTL2 terminal 5.0 V

Input power Pin VDD=2.8V +15 dBm

Power dissipation PD 4-layer FR4 PCB with through-hole (74.2x74.2mm), Tj=150°C 1300 mW

Operating temperature Topr -40~+85 °C

Storage temperature Tstg -55~+150 °C ! ELECTRICAL CHARACTERISTICS 1 (DC CHARACTERISTICS)

(General Conditions: VDD=2.8V, Ta=+25°C, Zs=Zl=50Ω) PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS

Operating voltage VDD 2.65 2.8 2.95 V

Control voltage (High) VCTL(H) 1.8 2.8 2.95 V

Control voltage (Low) VCTL(L) -0.3 0 0.3 V

Operating current1 (Cellular Band High Gain mode) IDD1 RF OFF,

VCTL1=0V, VCTL2=2.8V - 10 14 mA

Operating current2 (PCS Band High Gain mode) IDD2 RF OFF,

VCTL1=2.8V, VCTL2=0V - 10 14 mA

Operating current3 (LNA all off mode) IDD3 RF OFF,

VCTL1=0V, VCTL2=0V - 30 60 μA

Control current1 ICTL1 RF OFF, VCTL1=2.8V - 17 30 μA

Control current2 ICTL2 RF OFF, VCTL2=2.8V - 17 30 μA

NJG1135MD7

- 3 -

! ELECTRICAL CHARACTERISTICS 2 (Cellular Band: LNA High Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)

PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS

Small signal gain 1 Gain1 Exclude PCB, Connector Losses (input and output) 0.11dB 14.5 16.0 - dB

Noise figure 1 NF1 Exclude PCB, Connector Losses (input) 0.06dB - 1.4 1.8 dB

1dB gain compression input power 1 P-1dB_1 -8 -4 - dBm

3rd order input intercept point 1 IIP3_1 f1=fRF, f2=fRF+100kHz,

Pin=-25dBm +7 +10 - dBm

RF IN VSWR 1 VSWRi _1 - 1.5 2.0

RF OUT VSWR 1 VSWRo_1 - 1.5 2.0

! ELECTRICAL CHARACTERISTICS 3 (Cellular Band: LNA Low Gain Mode)

(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=0V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)

PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS

Small signal gain 2 Gain2 Exclude PCB, Connector Losses (input and output) 0.11dB -4.0 -2.5 - dB

Noise figure 2 NF2 Exclude PCB, Connector Losses (input and output) 0.11dB - 2.5 5.0 dB

1dB gain compression input power 2 P-1dB_2 +3.5 +10.5 - dBm

3rd order input intercept point 2 IIP3_2 f1=fRF, f2=fRF+100kHz,

Pin=-12dBm +15 +19 - dBm

RF IN VSWR 2 VSWRi _2 - 2.0 2.5

RF OUT VSWR 2 VSWRo_2 - 1.5 2.0

NJG1135MD7

- 4 -

! ELECTRICAL CHARACTERISTICS 4 (PCS Band: LNA High Gain Mode) (General Conditions: VDD=2.8V, VCTL1=2.8V, VCTL2=0V, fRF=1960MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)

PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS

Small signal gain 3 Gain3 Exclude PCB, Connector Losses (input and output) 0.22dB 14.5 16.0 - dB

Noise figure 3 NF3 Exclude PCB, Connector Losses (input) 0.12dB - 1.4 1.8 dB

1dB gain compression input power 3 P-1dB_3 -10 -6 - dBm

3rd order input intercept point 3 IIP3_3 f1=fRF, f2=fRF+100kHz,

Pin=-25dBm +5 +8 - dBm

RF IN VSWR 3 VSWRi _3 - 2.3 3.1

RF OUT VSWR 3 VSWRo_3 - 1.5 2.2

! ELECTRICAL CHARACTERISTICS 5 (PCS Band: LNA Low Gain Mode)

(General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=0V, fRF=1960MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)

PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS

Small signal gain 4 Gain4 Exclude PCB, Connector Losses (input and output) 0.22dB -5.0 -3.5 - dB

Noise figure 4 NF4 Exclude PCB, Connector Losses (input and output) 0.22dB - 4.0 5.5 dB

1dB gain compression input power 4 P-1dB_4 +1.5 +8.5 - dBm

3rd order input intercept point 4 IIP3_4 f1=fRF, f2=fRF+100kHz,

Pin=-12dBm +13 +17 - dBm

RF IN VSWR 4 VSWRi _4 - 2.3 2.9

RF OUT VSWR 4 VSWRo_4 - 1.5 2.0

NJG1135MD7

- 5 -

! TERMINAL INFOMATION

Notes:

1) Ground terminal (No.1, 4, 8, and 11) should be connected with the ground plane as close as possible for good RF performance, because distance to GND makes parasitic inductance.

No. SYMBOL DESCRIPTION

1 GND Ground terminal.

2 VCTL2 Control port 2. This terminal is set to more than +1.8V~+2.95V of logical high level for high gain mode of cellular band LNA, and set to –0.3V~+0.3V of logical low level for low gain mode of cellular band LNA.

3 VCTL1 Control port 1. This terminal is set to more than +1.8V~+2.95V of logical high level for high gain mode of PCS band LNA, and set to –0.3V~+0.3V of logical low level for low gain mode of PCS band LNA.

4 GND Ground terminal.

5 RFOUT1 RF output terminal of PCS band signal. RF signal and DC power is input through external matching circuit connected to this terminal. External matching circuit and DC blocking capacitor are required.

6 RFOUT2 RF output terminal of cellular band signal. RF signal and DC power is input through external matching circuit connected to this terminal. External matching circuit and DC blocking capacitor are required.

7 GND Ground terminal. This terminal is not connected with internal circuit.

8 GND Ground terminal.

9 GND Ground terminal. This terminal is not connected with internal circuit.

10 GND Ground terminal. This terminal is not connected with internal circuit.

11 GND Ground terminal.

12 RFIN2 RF input terminal of cellular band signal. RF signal is input through external matching circuit connected to this terminal. A DC blocking capacitor is not required.

13 RFIN1 RF input terminal of PCS band signal. RF signal is input through external matching circuit connected to this terminal. A DC blocking capacitor is not required.

14 GND Ground terminal. This terminal is not connected with internal circuit.

NJG1135MD7

- 6 -

! ELECTRICAL CHARACTERISTICS (Cellular Band: LNA High Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)

-30

-20

-10

0

10

20

-40 -30 -20 -10 0 10

Pout vs. Pin

Pout

(dB

m)

Pin (dBm)

Pout

P-1dB(IN)=-4.5dBm

f=880MHz

0

5

10

15

20

-40 -30 -20 -10 0 10

Gain, IDD vs. Pin

8

10

12

14

16

Gai

n (d

B)

Pin (dBm)

Gain

P-1dB(IN)=-4.5dBm

f=880MHz

IDD

IDD

(mA

)

-100

-80

-60

-40

-20

0

20

40

-30 -20 -10 0 10 20

Pout, IM3 vs. Pin

Pout

, IM

3 (d

Bm

)

Pin (dBm)

Pout

IIP3=+9.8dBm

f1=880MHz, f2=f1+100kHz

IM3

10

11

12

13

14

15

16

17

18

750 800 850 900 950 1000

Gain, NF vs. frequency

0

0.5

1

1.5

2

2.5

3

3.5

4

Gai

n (d

B)

frequency (MHz)

Gain

f=750~1000MHz

NF

NF

(dB

)

18

19

20

21

22

23

24

25

26

840 850 860 870 880 890 900 910 920

OIP3, IIP3 vs. frequency

6

7

8

9

10

11

12

13

14

OIP

3 (d

Bm

)

frequency (MHz)

OIP3

f1=840~920MHz, f2=f1+100kHz, Pin=-25dBm

IIP3 IIP3

(dB

m)

NJG1135MD7

- 7 -

! ELECTRICAL CHARACTERISTICS (Cellular Band: LNA High Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)

S11, S22 S21, S12

VSWR Zin, Zout

S21, S12 (~20GHz) S11, S22 (~20GHz)

NJG1135MD7

- 8 -

! ELECTRICAL CHARACTERISTICS (Cellular Band: LNA High Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Zs=Zl=50Ω, with application circuit)

0

5

10

15

20

0 5 10 15 20

K factor vs. frequency

Ta=-40oC

Ta=-20oC

Ta=0oC

Ta=25oC

Ta=60oC

Ta=85oC

K fa

ctor

frequency (GHz)

f=50M~20GHz

0

2

4

6

8

10

12

14

-40 -20 0 20 40 60 80 100

IDD, ICTL2 vs. Temperature

0

5

10

15

20

25

30

35

IDD

(mA

)

Temperature (oC)

IDD

RF off

ICTL2

ICTL

2 (u

A)

10

11

12

13

14

15

16

17

18

-40 -20 0 20 40 60 80 100

Gain, NF vs. Temperature

0

0.5

1

1.5

2

2.5

3

3.5

4

Gai

n (d

B)

Temperature (oC)

Gain

f=880MHz

NF

NF

(dB

)-12

-10

-8

-6

-4

-2

-40 -20 0 20 40 60 80 100

P-1dB(IN) vs. Temperature

P-1d

B(IN

) (dB

m)

Temperature (oC)

P-1dB(IN)

f=880MHz

1

1.5

2

2.5

3

-40 -20 0 20 40 60 80 100

VSWRi, VSWRo vs. TemperatureVS

WR

i, VS

WR

o

Temperature (oC)

VSWRi

f=880MHz

VSWRo

21

22

23

24

25

26

27

-40 -20 0 20 40 60 80 100

OIP3, IIP3 vs. Temperature

7

8

9

10

11

12

13

OIP

3 (d

Bm

)

Temperature (oC)

OIP3

f1=880MHz, f2=f1+100kHz, Pin=-25dBm

IIP3

IIP3

(dB

m)

NJG1135MD7

- 9 -

! ELECTRICAL CHARACTERISTICS (Cellular Band: LNA Low Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)

-40

-30

-20

-10

0

10

-30 -20 -10 0 10 20

Pout vs. Pin

Pout

(dB

m)

Pin (dBm)

Pout

P-1dB(IN)=-+13.0dBm

f=880MHz

-10

-8

-6

-4

-2

0

-30 -20 -10 0 10 20

Gain, IDD vs. Pin

0

50

100

150

200

250

Gai

n (d

B)

Pin (dBm)

Gain

P-1dB(IN)=+13.0dBm

f=880MHz

IDD

IDD

(uA

)

-100

-80

-60

-40

-20

0

20

40

-20 -10 0 10 20 30

Pout, IM3 vs. Pin

Pout

, IM

3 (d

Bm

)

Pin (dBm)

Pout

IIP3=+23.5dBm

f1=880MHz, f2=f1+100kHz

IM3

-8

-7

-6

-5

-4

-3

-2

-1

0

750 800 850 900 950 1000

Gain, NF vs. frequency

0

1

2

3

4

5

6

7

8

Gai

n (d

B)

frequency (MHz)

Gain

f=750~1000MHz

NF

NF

(dB

)

18

19

20

21

22

23

24

25

26

840 850 860 870 880 890 900 910 920

OIP3, IIP3 vs. frequency

18

19

20

21

22

23

24

25

26

OIP

3 (d

Bm

)

frequency (MHz)

OIP3

f1=840~920MHz, f2=f1+100kHz, Pin=-12dBm

IIP3

IIP3

(dB

m)

NJG1135MD7

- 10 -

! ELECTRICAL CHARACTERISTICS (Cellular Band: LNA Low Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)

S11, S22 (~20GHz) S21, S12 (~20GHz)

VSWR Zin, Zout

S21, S12 S11, S22

NJG1135MD7

- 11 -

! ELECTRICAL CHARACTERISTICS (Cellular Band: LNA Low Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=880MHz, Zs=Zl=50Ω, with application circuit)

-8

-7

-6

-5

-4

-3

-2

-1

0

-40 -20 0 20 40 60 80 100

Gain, NF vs. Temperature

0

1

2

3

4

5

6

7

8

Gai

n (d

B)

Temperature (oC)

Gain

f=880MHz

NF

NF

(dB

)4

6

8

10

12

14

16

-40 -20 0 20 40 60 80 100

P-1dB(IN) vs. Temperature

P-1d

B(IN

) (dB

m)

Temperature (oC)

P-1dB(IN)

f=880MHz

14

16

18

20

22

24

26

28

-40 -20 0 20 40 60 80 100

OIP3, IIP3 vs. Temperature

14

16

18

20

22

24

26

28

OIP

3 (d

Bm

)

Temperature (oC)

OIP3

f1=880MHz, f2=f1+100kHz, Pin=-12dBm

IIP3

IIP3

(dB

m)

1

1.5

2

2.5

3

-40 -20 0 20 40 60 80 100

VSWRi, VSWRo vs. TemperatureVS

WR

i, VS

WR

o

Temperature (oC)

VSWRi

f=880MHz

VSWRo

0

5

10

15

20

0 5 10 15 20

K factor vs. frequency

Ta=-40oC

Ta=-20oC

Ta=0oC

Ta=25oC

Ta=60oC

Ta=85oC

K fa

ctor

frequency (GHz)

f=50M~20GHz

0

10

20

30

40

50

60

-40 -20 0 20 40 60 80 100

IDD vs. Temperature

IDD

(uA

)

Temperature (oC)

IDD

RF off

NJG1135MD7

- 12 -

! ELECTRICAL CHARACTERISTICS (PCS Band: LNA High Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)

-30

-20

-10

0

10

20

-40 -30 -20 -10 0 10

Pout vs. Pin

Pout

(dB

m)

Pin (dBm)

Pout

P-1dB(IN)=-6.3dBm

f=1960MHz

0

5

10

15

20

-40 -30 -20 -10 0 10

Gain, IDD vs. Pin

6

8

10

12

14

Gai

n (d

B)

Pin (dBm)

Gain

P-1dB(IN)=-6.3dBm

f=1960MHz

IDD

IDD

(mA

)

-100

-80

-60

-40

-20

0

20

40

-30 -20 -10 0 10 20

Pout, IM3 vs. Pin

Pout

, IM

3 (d

Bm

)

Pin (dBm)

Pout

IIP3=+8.2dBm

f1=1960MHz, f2=f1+100kHz

IM3

10

11

12

13

14

15

16

17

18

1.8 1.85 1.9 1.95 2 2.05 2.1

Gain, NF vs. frequency

0

0.5

1

1.5

2

2.5

3

3.5

4

Gai

n (d

B)

frequency (GHz)

Gain

f=1.8~2.1GHz

NF

NF

(dB

)

18

19

20

21

22

23

24

25

26

1.9 1.92 1.94 1.96 1.98 2

OIP3, IIP3 vs. frequency

6

7

8

9

10

11

12

13

14

OIP

3 (d

Bm

)

frequency (GHz)

OIP3

f1=1.9~2.0GHz, f2=f1+100kHz, Pin=-25dBm

IIP3 IIP3

(dB

m)

NJG1135MD7

- 13 -

! ELECTRICAL CHARACTERISTICS (PCS Band: LNA High Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)

S11, S22 (~20GHz) S21, S12 (~20GHz)

Zin, Zout VSWR

S11, S22 S21, S12

NJG1135MD7

- 14 -

! ELECTRICAL CHARACTERISTICS (PCS Band: LNA High Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Zs=Zl=50Ω, with application circuit)

10

11

12

13

14

15

16

17

18

-40 -20 0 20 40 60 80 100

Gain, NF vs. Temperature

0

0.5

1

1.5

2

2.5

3

3.5

4

Gai

n (d

B)

Temperature (oC)

Gain

f=1960MHz

NF

NF

(dB

)-12

-10

-8

-6

-4

-2

-40 -20 0 20 40 60 80 100

P-1dB(IN) vs. Temperature

P-1d

B(IN

) (dB

m)

Temperature (oC)

P-1dB(IN)

f=1960MHz

20

21

22

23

24

25

26

-40 -20 0 20 40 60 80 100

OIP3, IIP3 vs. Temperature

6

7

8

9

10

11

12

OIP

3 (d

Bm

)

Temperature (oC)

OIP3

f1=1960MHz, f2=f1+100kHz, Pin=-25dBm

IIP3 IIP3

(dB

m)

1

1.5

2

2.5

3

-40 -20 0 20 40 60 80 100

VSWRi, VSWRo vs. TemperatureVS

WR

i, VS

WR

o

Temperature (oC)

VSWRi

f=1960MHz

VSWRo

0

2

4

6

8

10

12

14

-40 -20 0 20 40 60 80 100

IDD, ICTL1 vs. Temperature

0

5

10

15

20

25

30

35

IDD

(mA

)

Temperature (oC)

IDD

RF off

ICTL1 ICTL

1 (u

A)

0

5

10

15

20

0 5 10 15 20

K factor vs. frequency

Ta=-40oC

Ta=-20oC

Ta=0oC

Ta=25oC

Ta=60oC

Ta=85oC

K fa

ctor

frequency (GHz)

f=50M~20GHz

NJG1135MD7

- 15 -

! ELECTRICAL CHARACTERISTICS (PCS Band: LNA Low Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)

-40

-30

-20

-10

0

10

-30 -20 -10 0 10 20

Pout vs. Pin

Pout

(dB

m)

Pin (dBm)

Pout

P-1dB(IN)=+9.0dBm

f=1960MHz

-10

-8

-6

-4

-2

0

-30 -20 -10 0 10 20

Gain, IDD vs. Pin

0

50

100

150

200

250

Gai

n (d

B)

Pin (dBm)

Gain

P-1dB(IN)=+9.0dBm

f=1960MHz

IDD

IDD

(uA

)-100

-80

-60

-40

-20

0

20

40

-20 -10 0 10 20 30

Pout, IM3 vs. Pin

Pout

, IM

3 (d

Bm

)

Pin (dBm)

Pout

IIP3=+19.5dBm

f1=1960MHz, f2=f1+100kHz

IM3

14

15

16

17

18

19

20

21

22

1.9 1.92 1.94 1.96 1.98 2

OIP3, IIP3 vs. frequency

14

15

16

17

18

19

20

21

22

OIP

3 (d

Bm

)

frequency (GHz)

OIP3

f1=1.9~2.0GHz, f2=f1+100kHz, Pin=-12dBm

IIP3

IIP3

(dB

m)

-8

-7

-6

-5

-4

-3

-2

-1

0

1.8 1.85 1.9 1.95 2 2.05 2.1

Gain, NF vs. frequency

1

2

3

4

5

6

7

8

9

Gai

n (d

B)

frequency (GHz)

Gain

f=1.8~2.1GHz

NF

NF

(dB

)

NJG1135MD7

- 16 -

! ELECTRICAL CHARACTERISTICS (PCS Band: LNA Low Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit)

S11, S22 (~20GHz) S21, S12 (~20GHz)

Zin, Zout VSWR

S11, S22 S21, S12

NJG1135MD7

- 17 -

! ELECTRICAL CHARACTERISTICS (PCS Band: LNA Low Gain Mode) (General Conditions: VDD=2.8V, VCTL1=0V, VCTL2=2.8V, fRF=1960MHz, Zs=Zl=50Ω, with application circuit)

-8

-7

-6

-5

-4

-3

-2

-1

0

-40 -20 0 20 40 60 80 100

Gain, NF vs. Temperature

0

1

2

3

4

5

6

7

8

Gai

n (d

B)

Temperature (oC)

Gain

f=1960MHz

NF

NF

(dB

)4

6

8

10

12

14

16

-40 -20 0 20 40 60 80 100

P-1dB(IN) vs. Temperature

P-1d

B(IN

) (dB

m)

Temperature (oC)

P-1dB(IN)

f=1960MHz

10

12

14

16

18

20

22

24

-40 -20 0 20 40 60 80 100

OIP3, IIP3 vs. Temperature

12

14

16

18

20

22

24

26

OIP

3 (d

Bm

)

Temperature (oC)

OIP3

f1=1960MHz, f2=f1+100kHz, Pin=-12dBm

IIP3

IIP3

(dB

m)

1

1.5

2

2.5

3

-40 -20 0 20 40 60 80 100

VSWRi, VSWRo vs. TemperatureVS

WR

i, VS

WR

o

Temperature (oC)

VSWRi

f=1960MHz

VSWRo

0

10

20

30

40

50

60

-40 -20 0 20 40 60 80 100

IDD vs. Temperature

IDD

(uA

)

Temperature (oC)

IDD

RF off

0

5

10

15

20

0 5 10 15 20

K factor vs. frequency

Ta=-40oC

Ta=-20oC

Ta=0oC

Ta=25oC

Ta=60oC

Ta=85oC

K fa

ctor

frequency (GHz)

f=50M~20GHz

NJG1135MD7

- 18 -

! APPLICATION CIRCUIT

Parts ID Comments

L1, L2, L4 MURATA (LQP03T Series)

L3 TDK (MLK0603 Series)

L5~L8 TAIYO-YUDEN (HK1005 Series)

C1~C3 MURATA (GRM03 Series)

Parts list

RFOUT2

L710n

L3 6.8n

L4 4.7n

C1 100p

C2 100p

C3 0.01u

V DD

2.8V

RFOUT1

L1

4.7n L2

15n

L6 10n

L5 15n

L8

12n

VCTL

2

2.8V / 0V V

CTL1

RFIN2

RFIN1

1 2 3 4

5

6

7

891011

12

13

14

PCS

Cellular

2.8V / 0V

NJG1135MD7

- 19 -

! TEST PCB LAYOUT (TOP VIEW)

PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH=0.4mm (Z0=50ohm) PCB SIZE=17.0mm x 17.0mm

PRECAUTION: In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC.

RFOUT1 (PCS)

RFIN2 (Cellular)

RFIN1 (PCS)

VDD

VCTL1

VCTL2

L1L2 L3 L4

L5 L6L7 L8

C1

C2

C3

RFOUT2 (Cellular)

NJG1135MD7

- 20 -

! PACKAGE OUTLINE (EQFN14-D7)

Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country.

This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care toavoid these damages.

[CAUTION] The specifications on this databook are only

given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.