NJG1127HB6 800MHz Band LNA GaAs MMIC - · PDF fileVer.5 2007-2-23 NJG1127HB6 - 1 - 800MHz Band LNA GaAs MMIC nGENERAL DESCRIPTION nPACKAGE OUTLINE NJG1127HB6 is a LNA

Ver.5 2007-2-23

NJG1127HB6

- 1 -

800MHz Band LNA GaAs MMIC nGENERAL DESCRIPTION nPACKAGE OUTLINE

NJG1127HB6 is a LNA IC designed for 800MHz band CDMA2000 cellular phone. This IC has the function which bypasses LNA, and high gain mode or low gain mode can be chosen.

High IIP3 and a low noise are achieved at the High gain mode. And low current consumption can be achieved at the low gain mode because LNA enters the state of the standby.

A small and thin package of USB8 is adopted. nFEATURES

lLow voltage operation +2.8V typ. lLow control voltage operation +1.85V typ. [LNA High Gain Mode]

lHigh Input IP3 +11dBm typ. @ f=880MHz lLow noise figure 1.4dB typ. @ f=880MHz

[LNA Low Gain Mode] lLow current consumption 15uA typ. lHigh Input IP3 +19dBm typ. @ f=880MHz

lSmall & thin package USB8-B6 (Package size: 1.5mm x1.5mm x 0.55mm typ.) nPIN CONFIGURATION

Note: Specifications and description listed in this catalog are subject to change without prior notice.

NJG1127HB6

Pin Connection 1.VINV 2.GND 3.RF OUT 4.GND 5.RF IN 6.GND 7. VCTL 8. GND

1 Pin INDEX

(Top View)

BiasCircuit

LNA Circuits

Bypass circuit

LogicCircuit

1

35

8

7

6 2

4

Charmrich Enterprises Ltd (代理：JRC DIODES ZETEX ANPEC) Alan/李强 E-mail: [email protected] MB:13823264659

NJG1127HB6

- 2 -

nABSOLUTE MAXIMUM RATINGS (Ta=+25°C, Zs=Zl=50Ω)

PARAMETERS SYMBOL CONDITIONS RATINGS UNITS

Supply voltage VDD 5.0 V

Inverter supply voltage VINV 5.0 V

Control voltage VCTL 5.0 V

Input power Pin +15 dBm

Power dissipation PD on PCB board, Tjmax=150°C 160 mW

Operating temperature Topr -40~+85 °C

Storage temperature Tstg -55~+150 °C

nELECTRICAL CHARACTERISTICS 1 (DC CHARACTERISTICS)

(General Conditions: VDD=VINV=2.8V, Ta=+25°C, Zs=Zl=50Ω)

PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS

Operating voltage VDD 2.65 2.80 2.95 V

Inverter supply voltage VINV 2.65 2.80 2.95 V

Control voltage (High) VCTL(H) 1.80 1.85 VDD+0.3 V

Control voltage (Low) VCTL(L) 0 0 0.3 V

Operating current1 (LNA High Gain Mode) IDD1 RF OFF, VCTL=1.85V - 10.0 16.0 mA

Operating current2 (LNA Low Gain Mode) IDD2 RFOFF, VCTL=0V - 1 5 uA

Inverter current1 (LNA High Gain Mode) IINV1 RF OFF, VCTL=1.85V - 150 240 uA

Inverter current2 (LNA Low Gain Mode) IINV2 RF OFF, VCTL=0V - 15 40 uA

Control current ICTL RF OFF, VCTL=1.85V - 5 15 uA


NJG1127HB6

- 3 -

nELECTRICAL CHARACTERISTICS 2 (LNA High Gain Mode) (General Conditions: VDD=VINV=2.8V, VCTL=1.85V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω)


Small signal gain1 Gain1 13.5 15.0 17.0 dB

Noise figure1 NF1 Exclude PCB & connector losses (IN: 0.04dB) - 1.4 1.8 dB

1dB gain compression output power1 P-1dB_1 +4 +9 - dBm

3rd order Input Intercept Point1 IIP3_1 f1=fRF, f2=fRF+100kHz,

Pin=-25dBm +8 +11 - dBm

RF IN VSWR1 VSWRi _1 - 1.5 2.0

RF OUT VSWR1 VSWRo_1 - 1.5 2.0

nELECTRICAL CHARACTERISTICS 2 (LNA Low Gain Mode)

(General Conditions: VDD=VINV=2.8V, VCTL=0V, fRF=880MHz, Ta=+25°C, Zs=Zl=50Ω)


Small signal gain2 Gain2 -4.0 -2.5 0 dB

Noise figure2 NF2 Exclude PCB & connector losses (IN: 0.04dB) - 2.5 5.0 dB

1dB gain compression output power2 P-1dB_2 +1 +8 - dBm

3rd order Input Intercept Point2 IIP3_2 f1=fRF, f2=fRF+100kHz,

Pin=-12dBm +15 +19 - dBm

RF IN VSWR2 VSWRi _2 - 2.3 2.7

RF OUT VSWR2 VSWRo_2 - 1.8 2.1


NJG1127HB6

- 4 -

nTERMINAL INFOMATION

CAUTION

1) Ground terminal (No.2, 4, 6, 8) should be connected to the ground plane as close as possible for excellent RF performance, because distance to GND makes parasitic inductance.

nTRUTH TABLE

“H”=VCTL(H), “L”=VCTL(L)

VCTL Gain Mode LNA

L Low bypass

H High pass

No. SYMBOL DESCRIPTION

1 VINV Supply voltage terminal for internal logic circuit (inverter). Please place a bypass capacitor between this and GND for avoiding RF noise from outside.

2 GND Ground terminal.

3 RFOUT

RF signal comes out from this terminal, and goes through an external matching circuit connected to this. Inductor L3 as shown in the application circuit is a part of an external matching circuit, and also provide DC power to LNA. Capacitor C2 as shown in the application circuit is a bypass capacitor.


5 RFIN RF input terminal. The RF signal is input through external matching circuit connected to this terminal. A DC blocking capacitor is not required.


7 VCTL Control port. A logic control signal is required to select High or Low gain mode of LNA. This terminal is set to more than +1.5V of logical high level for High gain mode of LNA, and set to 0~+0.3V of logical low level for Low gain mode.



NJG1127HB6

- 5 -

nELECTRICAL CHARACTERISTICS (LNA High Gain Mode) (General Conditions: Ta=+25°C, VDD=VINV=2.8V, VCTL=1.85V, Zs=Zl=50Ω)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

750 800 850 900 950 10001 0

1 1

1 2

1 3

1 4

1 5

1 6

1 7

1 8

Ga

in (

dB

)

frequency (MHz)

NF

(d

B)

Gain

NF, Gain vs. frequency

NF

(f=750~1000MHz)

-80

-60

-40

-20

0

2 0

4 0

-30 -20 -10 0 1 0 20

Po

ut,

IM

3 (

dB

m)

Pin (dBm)

IIP3=+10.4dBm

Pout

Pout, IM3 vs. Pin

IM3

OIP3=+25.7dBm

(f1=880MHz, f2=f1+100kHz)

-30

-20

-10

0

1 0

2 0

-40 -30 -20 -10 0 10

Pout vs. Pin

Po

ut

(dB

m)

Pin (dBm)

P-1dBout=+9.2Bm

Gain 1dB Compression Line

Pout

P-1dBin=-5.0dBm

(f=880MHz)

0

5

10

15

20

-40 -30 -20 -10 0 1 08

10

12

14

16

IDD

(m

A)

Pin (dBm)G

ain

(d

B)

Gain

Gain, IDD vs. Pin

IDD

P-1dBin=-5.0dBm

(f=880MHz)

22

23

24

25

26

27

28

29

30

860 870 880 890 900 9109

10

11

12

13

14

15

16

17

OIP

3 (

dB

m)

frequency (MHz)II

P3

(d

Bm

)

OIP3

OIP3, IIP3 vs. frequency

I IP3

(f1=860~910MHz, f2=f1+100kHz, Pin=-25dBm)


NJG1127HB6

- 6 -



NJG1127HB6

- 7 -


5.0

6.0

7.0

8.0

9.0

10.0

11.0

12.0

13.0

2.4 2.6 2.8 3.0 3.2 3.4 3.6P

-1d

B(O

UT

) (d

Bm

)VDD , VINV (V)

P-1dB(OUT) vs. VDD, VINV

P-1dB(OUT)

(f=880MHz)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

2.4 2.6 2.8 3.0 3.2 3.4 3.60.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VS

WR

i

VDD , V INV (V)

VS

WR

o

VSWRi

VSWRi, VSWRo vs. VDD, V INV

VSWRo

(f=880MHz)

1 4

1 6

1 8

2 0

2 2

2 4

2 6

2 8

3 0

2.4 2.6 2.8 3.0 3.2 3.4 3.64

6

8

10

12

14

16

18

20

OIP

3 (

dB

m)

VDD , V INV (V)

IIP

3 (

dB

m)

OIP3

OIP3, IIP3 vs. VDD, V INV

IIP3

(f1=880MHz, f2=f1+100kHz, Pin=-25dBm)

11

12

13

14

15

16

17

18

19

2.4 2.6 2.8 3.0 3.2 3.4 3.60.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

Ga

in (

dB

)

VDD , V INV (V)

NF

(d

B)Gain

Gain, NF vs. VDD, V INV

NF

(f=880MHz)

6

7

8

9

1 0

1 1

1 2

1 3

1 4

2.4 2.6 2.8 3.0 3.2 3.40.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

IDD

(m

A)

VDD, VINV (V)

IINV

(m

A)

IDD

IDD , IINV vs. VDD , VINV

IINV

(RF OFF)


NJG1127HB6

- 8 -


10

11

12

13

14

15

16

17

18

-40 -20 0 20 40 60 8 0 1000.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

Ga

in (

dB

)

Temperature (oC)

NF

(d

B)

Gain

Gain, NF vs. Temperature

NF

(f=880MHz)

0

2

4

6

8

10

12

14

-40 -20 0 2 0 40 60 80 100

Temperature (oC)P

-1d

B(O

UT

) (d

Bm

)

P-1dB(OUT) vs. Temperature

P-1dB(OUT)

(f=880MHz)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

-40 -20 0 20 40 60 80 100Temperature (oC)

VS

WR

i, V

SW

Ro

VSWRi, VSWRo vs. Temperature

VSWRi

VSWRo

(f=880MHz)

2 3

2 4

2 5

2 6

2 7

2 8

2 9

-40 -20 0 20 40 60 8 0 1006

7

8

9

1 0

1 1

1 2

OIP

3 (

dB

m)

Temperature (oC)

IIP

3 (

dB

m)

OIP3

OIP3, IIP3 vs. Temperature

IIP3


0

2

4

6

8

10

12

14

-40 -20 0 2 0 40 60 80 100

Temperature (oC)

IDD

(m

A)

IDD vs. Temperature

IDD

(RF OFF)

0

5

10

15

20

0 5 1 0 15 20frequency (GHz)

k-f

ac

tor

k-factor vs. Temperature

-40oC-30oC-10oC

0oC+25oC+40oC+85oC

(f=100MHz~20GHz)


NJG1127HB6

- 9 -

nELECTRICAL CHARACTERISTICS (LNA Low Gain Mode) (General Conditions: Ta=+25°C, VDD=VINV=2.8V, VCTL=0V, Zs=Zl=50Ω)

-50

-40

-30

-20

-10

0

1 0

2 0

-40 -30 -20 -10 0 10 20

Pout vs. Pin

Po

ut

(dB

m)

Pin (dBm)

P-1dBin=+11.5dBm

Gain 1dB Compression Line

Pout

P-1dBout=+7.8dBm

(f=880MHz)

-9

-8

-7

-6

-5

-4

-3

-2

-1

-40 -30 -20 -10 0 1 0 200.0

0.3

0.5

0.8

1.0

1.3

1.5

1.8

2.0

IDD

(u

A)

Pin (dBm)G

ain

(d

B)

Gain

Gain, IDD vs. Pin

IDDP-1dBin=+10.8dBm

(f=880MHz)

-100

-80

-60

-40

-20

0

20

-30 -20 -10 0 10 2 0 3 0

Po

ut,

IM

3 (

dB

m)

Pin (dBm)

IIP3=+23.5dBm

Pout

Pout, IM3 vs. Pin

IM3

OIP3=+20.5dBm

(f1=880MHz, f2=f1+100kHz)

18

20

22

24

26

28

30

860 870 880 890 900 91018

20

22

24

26

28

30

OIP

3 (

dB

m)

frequency (MHz)II

P3

(d

Bm

)

OIP3

OIP3, IIP3 vs. frequency

I IP3

(f1=860~910MHz, f2=f1+100kHz, Pin=-12dBm)

0

1

2

3

4

5

6

7

8

750 800 850 900 950 1000

-7

-6

-5

-4

-3

-2

-1

0

1

Ga

in (

dB

)

frequency (MHz)

NF

(d

B) Gain

NF, Gain vs. frequency

NF

(f=750~1000MHz)


NJG1127HB6

- 10 -



NJG1127HB6

- 11 -


6

7

8

9

10

11

2.4 2.6 2.8 3.0 3.2 3.4 3.6

P-1

dB

(OU

T)

(dB

m)

VDD , V INV (V)

P-1dB(OUT) vs. V DD, V INV

P-1dB(OUT)

(f=880MHz)

0.00

0.05

0.10

0.15

0.20

2.4 2.6 2.8 3.0 3.2 3.40

5

10

15

20

IDD

(u

A)

VDD , VINV (V)

IINV (

uA

)

IDD

IDD , IINV vs. VDD , VINV

I INV

(RF OFF)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

2.4 2.6 2.8 3.0 3.2 3.4 3.6

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VS

WR

i

VDD , V INV (V)V

SW

Ro

VSWRi

VSWRi, VSWRo vs. VDD , VINV

VSWRo

(f=880MHz)

20

22

24

26

28

30

32

34

36

2.4 2.6 2.8 3.0 3.2 3.4

1 4

1 6

1 8

2 0

2 2

2 4

2 6

2 8

3 0

OIP

3 (

dB

m)

VDD , VINV (V)

IIP

3 (

dB

m)

OIP3

OIP3, IIP3 vs. VDD , VINV

IIP3


-4.0

-3.5

-3.0

-2.5

-2.0

-1.5

-1.0

-0.5

0.0

2.4 2.6 2.8 3.0 3.2 3.4 3.60.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

Ga

in (

dB

)

VDD , VINV (V)

NF

(d

B)

Gain

Gain, NF vs. VDD , VINV

NF

(f=880MHz)


NJG1127HB6

- 12 -


-8

-7

-6

-5

-4

-3

-2

-1

0

-40 -20 0 20 40 60 80 1002

3

4

5

6

7

8

9

10

Ga

in (

dB

)

Temperature (oC)

NF

(d

B)

Gain

Gain, NF vs. Temperature

NF

(f=880MHz)

14

16

18

20

22

24

26

28

-40 -20 0 20 4 0 6 0 80 100

14

16

18

20

22

24

26

28

OIP

3 (

dB

m)

Temperature (oC)

IIP

3 (

dB

m)

OIP3

OIP3, IIP3 vs. Temperature

I IP3


0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

-40 -20 0 20 40 60 80 100Temperature (oC)

VS

WR

i, V

SW

Ro

VSWRi, VSWRo vs. Temperature

VSWRi

VSWRo

(f=880MHz)

0

2

4

6

8

10

-40 -20 0 20 40 60 80 100Temperature ( oC)

IDD (

uA

)

IDD vs. Temperature

IDD

(RF OFF)

0

5

10

15

20

0 5 10 15 20frequency (GHz)

k-f

ac

tor

k-factor vs. Temperature

-40oC-30oC-10oC0oC

+25oC+40oC+85oC

(f=100MHz~20GHz)

0

2

4

6

8

1 0

1 2

1 4

-40 -20 0 20 40 60 80 100Temperature (oC)

P-1

dB

(OU

T)

(dB

m)

P-1dB(OUT) vs. Temperature

P-1dB(OUT)

(f=880MHz)


NJG1127HB6

- 13 -

nAPPLICATION CIRCUIT

nTEST PCB LAYOUT

Parts ID Notes

L1~L4 TAIYO-YUDEN (HK1005 series)

C1,C2 MURATA (GRM15 series)

RFIN RFOUT

BiasCircuit

LogicCircuit

1

35

8

7

6 2

4

L139nH

L2 12nH

L3 12nH

L4 12nH

C1 1000pF

C2 1000pF

VDD=2.8V

VCTL=0V or 1.85V VINV=2.8V

(Top View)

1 Pin INDEX

RF IN RF OUT

VDD

VCTL VINV

L1

L2

L4

L3 C1

C2

(Top View)

PCB (FR-4) : t=0.2mm MICROSTRIP LINE WIDTH

=0.4mm (Z0=50Ω)

PCB SIZE=17.0mm X 17.0mm

Parts List


NJG1127HB6

- 14 -

0.038±0.01

1pin INDEX

0.4±0.1

(TOP VIEW) (SIDE VIEW)

1.5

±0.0

5

0.2±0.050.2±0.05

0.3

±0.1

0.2±

0.1

0.2±

0.1

0.5±0.1 0.5±0.1

1.5±0.05

R0.075

7 6 5

1 2 3

84

0.14±0.05

(BOTTOM VIEW)

0.3±0.05

0.55±0.05

nPACKAGE OUTLINE (USB8-B6)

TERMINAL TREAT :Au PCB :FR5 Molding material :Epoxy resin UNIT :mm WEIGHT :4mg

Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country.

This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages.

[CAUTION] The specifications on this databook are only

given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.


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Documents

NJG1127HB6 800MHz Band LNA GaAs MMIC - · PDF fileVer.5 2007-2-23 NJG1127HB6 - 1 - 800MHz Band LNA GaAs MMIC nGENERAL DESCRIPTION nPACKAGE OUTLINE NJG1127HB6 is a LNA