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MIT Lincoln Laboratory kickoff-1 PWW 4/7/2000 Via Topology for 3-D Integration 7 April 2000 Peter W. Wyatt and Paul V. Davis [email protected] 781-981-7882 voice 781-981-7889 fax

MIT Lincoln Laboratory kickoff-1 PWW 4/7/2000 Via Topology for 3-D Integration 7 April 2000 Peter W. Wyatt and Paul V. Davis [email protected] 781-981-7882

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Page 1: MIT Lincoln Laboratory kickoff-1 PWW 4/7/2000 Via Topology for 3-D Integration 7 April 2000 Peter W. Wyatt and Paul V. Davis wyatt@LL.mit.edu 781-981-7882

MIT Lincoln Laboratorykickoff-1

PWW 4/7/2000

Via Topology for 3-D Integration

7 April 2000

Peter W. Wyatt and Paul V. Davis

[email protected] voice

781-981-7889 fax

Page 2: MIT Lincoln Laboratory kickoff-1 PWW 4/7/2000 Via Topology for 3-D Integration 7 April 2000 Peter W. Wyatt and Paul V. Davis wyatt@LL.mit.edu 781-981-7882

MIT Lincoln Laboratorykickoff-2

PWW 4/7/2000

Via Topology Introduction

• Interconnect reticle set is being designed to test four options for vertical vias connecting three wafers– Explore variations of design rules– Optimize process for high yield– Minimize reticle cost by using the same reticles for all three wafers

to the extent possible

• Bottom wafer is always upright during assembly

• Top two wafers may be either inverted or upright– Initial work used inverted wafers

• Vias may be either offset or concentric– Initial work used offset vias

Page 3: MIT Lincoln Laboratory kickoff-1 PWW 4/7/2000 Via Topology for 3-D Integration 7 April 2000 Peter W. Wyatt and Paul V. Davis wyatt@LL.mit.edu 781-981-7882

MIT Lincoln Laboratorykickoff-3

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Offset Via Topology with Inverted Circuits -- The Original

• All layers are the same on all 3 circuits except deep via and Metal 4

• Mask count: Remove, M1, V12, M2, V23, M3, SV, DV12, DV23, M4W2, M4W3, Passivation = 12 masks

• Cannot have a transistor lined up with a shallow or deep via

Si wafer

Bonding layer

M1M2

M3

M1

M1M1

M3M2

M1M1M3

M4

M4

Deep vias

Shallow vias

W1

W2

W3

Passivation cut

Oxide

Page 4: MIT Lincoln Laboratory kickoff-1 PWW 4/7/2000 Via Topology for 3-D Integration 7 April 2000 Peter W. Wyatt and Paul V. Davis wyatt@LL.mit.edu 781-981-7882

MIT Lincoln Laboratorykickoff-4

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Chip Topology with Inverted Assembly

• Use a single reticle set for all three wafers to save cost

• Inverted assembly creates two copies of each structure

• One is useful, the other is not

• Does not occur with upright assembly

• Not an issue for real circuits

Cell 1Bottom

Cell 2BottomCell 2Top

Cell 1TopCell 1Bottom

Cell 2BottomCell 2Top

Cell 1Top

Bottom wafer, upright Top wafer, inverted

Cell 1Bottom

Cell 2BottomCell 2Top

Cell 1TopCell 1Bottom

Cell 2BottomCell 2Top

Cell 1Top

Bothwafers

thesame

throughmetal 3

Page 5: MIT Lincoln Laboratory kickoff-1 PWW 4/7/2000 Via Topology for 3-D Integration 7 April 2000 Peter W. Wyatt and Paul V. Davis wyatt@LL.mit.edu 781-981-7882

MIT Lincoln Laboratorykickoff-5

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Offset Via Topology with Inverted Circuits --Chain of Deep Vias

• Deep vias and metal 4 are different on each wafer, but all other layers are the same on all three

• Shallow via chain is easy, the same on wafers 2 and 3

M4W3

M4W2

M3

DV

12

DV

23

Si wafer

Page 6: MIT Lincoln Laboratory kickoff-1 PWW 4/7/2000 Via Topology for 3-D Integration 7 April 2000 Peter W. Wyatt and Paul V. Davis wyatt@LL.mit.edu 781-981-7882

MIT Lincoln Laboratorykickoff-6

PWW 4/7/2000

Offset Via Topology with Inverted Circuits --Chain of Both Shallow and Deep Vias

• Deep vias and metal 4 are different on each wafer, but all other layers are the same on all three

• Creates extraneous floating metal, but that does no harm

• A problem: these chains occupy large area because– They are long -- many thousand vias– Multiple copies are needed with design rule variations

M4W3

M4W2

M1

M1

M3

DV

12

DV

23

SV

Si wafer

One period, 4 deep vias and 6 shallow vias

Extraneous metal

Page 7: MIT Lincoln Laboratory kickoff-1 PWW 4/7/2000 Via Topology for 3-D Integration 7 April 2000 Peter W. Wyatt and Paul V. Davis wyatt@LL.mit.edu 781-981-7882

MIT Lincoln Laboratorykickoff-7

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Offset Via Topology with Inverted Circuits --Making Chains Reusable

• Make the same structure work for multiple cases– Left and right instances of inverted– Inverted and upright

• To save space on the reticle given the need for long chains

• Requires M3W1 different than M3W2 => mask count = 13

Si wafer

DV

12

DV

23

M1M3

M3M1

M3M1

Page 8: MIT Lincoln Laboratory kickoff-1 PWW 4/7/2000 Via Topology for 3-D Integration 7 April 2000 Peter W. Wyatt and Paul V. Davis wyatt@LL.mit.edu 781-981-7882

MIT Lincoln Laboratorykickoff-8

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Offset Via Chain with Upright Circuits --Same Layout as Inverted

• Allows transistor below shallow or deep via

Si wafer

DV

12

DV

23 M1M3

M3M1

M3M1

Page 9: MIT Lincoln Laboratory kickoff-1 PWW 4/7/2000 Via Topology for 3-D Integration 7 April 2000 Peter W. Wyatt and Paul V. Davis wyatt@LL.mit.edu 781-981-7882

MIT Lincoln Laboratorykickoff-9

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Si wafer

Bonding layer

M3

M1M2 M3 M3 (same as W3)

Bonding layer

Concentric Via Topology with Inverted Circuits

• M1 and M3 must both be different on W2 and W3

• M1 is the same on W1 and W2; M3 is the same on W1 and W3

• One more mask => count = 14

• Masks if this were the only type of via: Remove, M1W1&2, M1W3, V12, M2, V23, M3W1&3, M3W2, DV12, DV23, Passivation; count = 11

Passivation cut

M3D

V12

M3

DV

23

M1

M1 (same as w2)

Page 10: MIT Lincoln Laboratory kickoff-1 PWW 4/7/2000 Via Topology for 3-D Integration 7 April 2000 Peter W. Wyatt and Paul V. Davis wyatt@LL.mit.edu 781-981-7882

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Concentric Via Topology with Upright Circuits

• M3 is different on W1 and W2; W1 and 3 can be the same

• M1 is the same on all wafers

• No added mask

• Masks if this were the only type of via: Remove, M1, V12, M2, V23, M3W1&3, M3W2, DV12, DV23, Passivation; count = 10

Si wafer

Passivation cutM3

M1

M3D

V12 M1

M1D

V23

M3 M3

M1

M3

M1

Page 11: MIT Lincoln Laboratory kickoff-1 PWW 4/7/2000 Via Topology for 3-D Integration 7 April 2000 Peter W. Wyatt and Paul V. Davis wyatt@LL.mit.edu 781-981-7882

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Si wafer

Concentric Via Topology with Inverted CircuitsComplete Chain

• M1 is the same on W1 and W2; M3 is the same on W1 and W3

• M2 is the same on all three wafers

• Left and right instances are both good

• Cannot make inverted and upright with the same layout – Possible with offset vias because M4 is patterned after assembly

DV

12

DV

23

DV

12

DV

23

M3

M1M3

M1M3

DV

12

DV

23

DV

12

DV

23

M3

M1M3

M1M3

Page 12: MIT Lincoln Laboratory kickoff-1 PWW 4/7/2000 Via Topology for 3-D Integration 7 April 2000 Peter W. Wyatt and Paul V. Davis wyatt@LL.mit.edu 781-981-7882

MIT Lincoln Laboratorykickoff-12

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Via Topology -- Status

• Four types of via have been evaluated– Most reticles can be used for all three wafers– All four types of via can be fabricated with 14 reticles– Many different via chains must be laid out– Some layouts can produce more than one type, saving space

• Layout of offset via chains is in progress

• Concentric via layout will follow