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Microfabrication Technologies. Luiz Otávio Saraiva Ferreira LNLS [email protected]. OUTLINE. Lithography Transfer of Patterns Bulk Silicon Micromachinning Surface Micromachinning LIGA technique. Litography - Evolution. France, 1822 Graphic arts. Printed circuit board- 1940-1945. - PowerPoint PPT Presentation
Citation preview
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OUTLINE
• Lithography
• Transfer of Patterns
• Bulk Silicon Micromachinning
• Surface Micromachinning
• LIGA technique
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Litography - Evolution
• France, 1822• Graphic arts.• Printed circuit board- 1940-1945.
– 0.1mm wide lines.
– (It may be used for microfluidics).
• Integrated circuit - 1961.– 5um wide lines.
• Wide evolution on electronics industry.
• Microsystems require progress on 3D lithography.
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• Stencil
UV LIGHT
GLASS OR QUARTZ
PHOTORESIST
SUBSTRATE
LIGHT ABSORBER(800A Cr)
1:1 IMAGE
• Light Field
• Dark Field
Lithographic Masks
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PHOTORESIST
Si SUBSTRATESiO2
Photoresist processing• Spinning
• Most used substrate: Si/SiO2
• Si Oxidation– Wet or dry.– Between 900 and 1150oC.
• SiO2 masks the substrate in the following processing steps.
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Transfer of Patterns
Si
SiO2
Photoresist
RadiationGlass
Metal
Unexposed Photoresist
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2
3
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Karl Suss MA4
Mask Aligner
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Ultra Violet or X-Ray Source
Mask
Before Exposure Exposure After Development
3D LithographyTechniques
Thornell & Johansson, J. Micromech. Microeng. (1998) 251-262
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Bulk Silicon Micromachining
Wet or Dry Etch
A B
ISOTROPIC
Isotropic AnisotropicSelective
ANISOTROPIC
Sci. Am. April 1983 pp. 39
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Back and Front Side Back and Front Side Bulk MicromachiningBulk Micromachining
Suspensedevices
MembraneBack Side Etch
Front Side Etch
Cantilever
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Problems of Bulk Micromachining
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Corner Compensation
No compensation Beginning etch
Mid etch End of etch
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Surface MicromachiningEtch
Before etch
After etch
CantileverBridge
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Example of Surface Micromachining
Sandia
Germany - 80’s
Resist
Base Plate
IRRADIATION
Base Plate
Resist structure
DEVELOPMENT
ELECTROFORMING
Metal
Resist Structure
Base Plate
MOLD FABRICATION
Mold Insert
Mold Cavity
Synchrotron Radiation
Mask membraneAbsorber structure
MOLD FILLING
Mold Insert
Mold MaterialGate Plate
Injection Hole
DEMOLDING
Plastic Microstructure
PLASTIC MOLDING
Mold Insert
Mold Material
Plastic Structure(Lost Mold)DEMOLDING
SLURRY CASTING
Ceramic Slurry
Plastic Structure(Lost Mold)
FIRING
Ceramic Micro-structure
ELECTROFORMING
Metal
Gate Plate
Injection Hole
Metallic Micro-structure
FINISHING
Plastic Structure
LIGA Technology
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X-Ray
Be Filter (125um)
Al Filter
100um thick SU-8 film
Si substrate
Au absorber (1.8um) 20um SU-8
Kapton mask Plating Base (0.2um Au)
5 - 15 keV spectrum after filtering
Deep X-ray Lithography
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•PMMA (polymethylmetacrylate)
•the most used.
•High resolution.
•Low sensitivity (2.5 kJ/cm3 minimum dose).
•Long exposure times.
•Up to 100µm thick 1-3 keV energy.
•From 100µm to 500µm thick 3 - 7 keV energy.
•SU-8 (epoxy based)
•a promising material
•Good resolution.
•High sensitivity.
•Short exposure times.
•Difficult processing.
Resists for deep X-ray Lithography
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20µm thick UV-LIGA process.
Deep UV lithography on
SU-8.
Au platting.
Frame
25µm thick Kapton Membrane
Plating Base
2µm Au 20µm SU-8
Kapton Mask
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UV
Cheap
Non-vertical sidewalls - border diffraction effect.
RX
Expensive
Vertical sidewalls - negligible border diffraction.
Deep UV lithography Deep X-ray lithography
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