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Microelectronic Engineering Rochester Institute of Technology Dr. Lynn Fuller, page 1 SSI Process Backup using the SVG Lilah Cook MCEE 550 Fall 2013 Factory Improvement Project Dr. Lynn Fuller Revised: 4-8-14

Microelectronic Engineering Rochester Institute of Technology Dr. Lynn Fuller, page 1 SSI Process Backup using the SVG Lilah Cook MCEE 550 Fall 2013 Factory

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Page 1: Microelectronic Engineering Rochester Institute of Technology Dr. Lynn Fuller, page 1 SSI Process Backup using the SVG Lilah Cook MCEE 550 Fall 2013 Factory

Microelectronic Engineering

Rochester Institute of Technology Dr. Lynn Fuller, page 1

SSI Process Backup using the SVG

Lilah Cook

MCEE 550 Fall 2013

Factory Improvement Project

Dr. Lynn Fuller

Revised: 4-8-14

Page 2: Microelectronic Engineering Rochester Institute of Technology Dr. Lynn Fuller, page 1 SSI Process Backup using the SVG Lilah Cook MCEE 550 Fall 2013 Factory

Microelectronic Engineering

Rochester Institute of Technology Dr. Lynn Fuller, page 2

SSI & SVG Coat

SSI Coat Experiment

• 2 Wafers coated using Coat.rcp with Oir620 resist

• Coat.rcp breakdoawn– Acceleration: 15 krpm

– Oven 1 temp: 140 (60s)

– Oven 2 temp: 90 (60s)

– SpinSteps• 0 800 rpm (5s)

• 800 3400 rpm (5s)

• 3400 2000 rpm (25s)

– Automatic dispense

SVG Coat Experiment• 2 Wafers coated using SVG track

with Oir630 resist • Created program 6 on SVG track

1b to emulate the spin steps from the SSI

– Check oven 1 temp ~140 – Change oven 2 temp ~90

• Remove lid on cover for manual dispense

• Select program 1 on track 1a for the standard prime

• Select program 6 on track 1b• Start 1a then 1b• Manually dispense resist when

wafers reach spin coater

Page 3: Microelectronic Engineering Rochester Institute of Technology Dr. Lynn Fuller, page 1 SSI Process Backup using the SVG Lilah Cook MCEE 550 Fall 2013 Factory

Microelectronic Engineering

Rochester Institute of Technology Dr. Lynn Fuller, page 3

Coat Comparison

SVGWafer 1: 10553 A Std 0.36% Wafer 2: 10578 A Std 1.00%

SSIWafer 1: 10354 A Std 0.92%Wafer 2: 10288 A Std 0.81%

Spectramap 49 Point Resist Measurements:

Page 4: Microelectronic Engineering Rochester Institute of Technology Dr. Lynn Fuller, page 1 SSI Process Backup using the SVG Lilah Cook MCEE 550 Fall 2013 Factory

Microelectronic Engineering

Rochester Institute of Technology Dr. Lynn Fuller, page 4

Pattern and Develop

• Lightly scribed the back of the SVG wafers and placed all four wafers into the ASML for level 1 and JG n well patterning

• SSI Develop– Wafers went through the develop.rcp recipe with no problem

• SVG Develop– SVG track has NO post exposure bake oven so replication would

be impossible

– Created Program 6 on track 2 which doubles the standard 60 second develop found in the SSI track

• Needed to be broken up into two steps as max input in SVG in 99 seconds

– Wafers developed with 60 seconds develop ad a 15 second rinse• Waiting for approval to add program steps to manual

Page 5: Microelectronic Engineering Rochester Institute of Technology Dr. Lynn Fuller, page 1 SSI Process Backup using the SVG Lilah Cook MCEE 550 Fall 2013 Factory

Microelectronic Engineering

Rochester Institute of Technology Dr. Lynn Fuller, page 5

Develop Comparison

Page 6: Microelectronic Engineering Rochester Institute of Technology Dr. Lynn Fuller, page 1 SSI Process Backup using the SVG Lilah Cook MCEE 550 Fall 2013 Factory

Microelectronic Engineering

Rochester Institute of Technology Dr. Lynn Fuller, page 6

Conclusions

• The above optical images shows that the nwell pattern has fully been developed

• SVG tracks can be used to emulate the SSI track when patterning large features– Track 1a: Program 1 (standard Prime)

– Track 1b: Program 6 (SSI Coat replica)

– Track 2 : Program 6 (Oir620 Develop)

• Working with SMFL staff to add program descriptions and recipes to the SVG manual