M MDV1528 - magnachip.com Trench MOSFET 30V, 16A, 1 8. m ... MDV1528 is suitable for DC/DC converter and general purpose applications. D G S ... 5.1 7.3 9.5 …

May. 2011. Version1.3 MagnaChip Semiconductor Ltd. 1

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Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol Rating Unit

Drain-Source Voltage VDSS 30 V

Gate-Source Voltage VGSS ±20 V

Continuous Drain Current (1)

TC=25oC (Silicon limited)

ID

26.4

A TC=25

oC (Package limited) 16

TC=70oC 16

TA=25oC 10.1

(3)

TA=70oC 8.1

(3)

Pulsed Drain Current IDM 60 A

Power Dissipation

TC=25oC

PD

23.1

W TC=70

oC 14.8

TA=25oC 3.4

(3)

TA=70oC 2.2

(3)

Single Pulse Avalanche Energy (2)

EAS 20 mJ

Junction and Storage Temperature Range TJ, Tstg -55~150 oC

Thermal Characteristics

Characteristics Symbol Rating Unit

Thermal Resistance, Junction-to-Ambient (1)

RθJA 36 oC/W

Thermal Resistance, Junction-to-Case RθJC 5.4

MDV1528 Single N-channel Trench MOSFET 30V, 16A, 18.8mΩ

Features

VDS = 30V ID = 16A @VGS = 10V RDS(ON)

< 18.8mΩ @VGS = 10V < 27.8mΩ @VGS = 4.5V

100% UIL Tested 100% Rg Tested

General Description The MDV1528 uses advanced MagnaChip’s MOSFET

Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1528 is suitable for DC/DC converter and general purpose applications.

D

G

SPDFN33

S S S G G S S S

D D D D D D D D


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Ordering Information

Part Number Temp. Range Package Packing Quantity Rohs Status

MDV1528URH -55~150oC PowerDFN33 Tape & Reel 5000 units Halogen Free

Electrical Characteristics (TJ = 25oC)

Characteristics Symbol Test Condition Min Typ Max Unit

Static Characteristics

Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 30 - - V

Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.3 1.9 2.7

Drain Cut-Off Current IDSS VDS = 30V, VGS = 0V - - 1

μA TJ=55oC - - 5

Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1

Drain-Source ON Resistance RDS(ON)

VGS = 10V, ID = 8A - 16.3 18.8

mΩ TJ=125oC - 23.6 27.3

VGS = 4.5V, ID = 6A - 23.2 27.8

Forward Transconductance gfs VDS = 5V, ID = 8A - 12.3 - S

Dynamic Characteristics

Total Gate Charge Qg(10V)

VDS = 15.0V, ID = 8A, VGS = 10V

5.1 7.3 9.5

nC Total Gate Charge Qg(4.5V) 2.4 3.5 4.5

Gate-Source Charge Qgs - 1.5 -

Gate-Drain Charge Qgd - 1.3 -

Input Capacitance Ciss

VDS = 15.0V, VGS = 0V, f = 1.0MHz

319 456 593

pF Reverse Transfer Capacitance Crss 30 42 56

Output Capacitance Coss 61 88 114

Turn-On Delay Time td(on)

VGS = 10V, VDS = 15.0V, ID = 8A, RG = 3.0Ω

- 5.5 -

ns Rise Time tr - 3.2 -

Turn-Off Delay Time td(off) - 13.8 -

Fall Time tf - 2.9 -

Gate Resistance Rg f=1 MHz 1.0 3.0 4.0 Ω

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage VSD IS = 8A, VGS = 0V - 0.85 1.1 V

Body Diode Reverse Recovery Time trr IF = 8A, dl/dt = 100A/μs

- 16.1 24.2 ns

Body Diode Reverse Recovery Charge Qrr - 8.3 12.4 nC

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7)

2. EAS is tested at starting Tj = 25, L = 0.1mH, IAS = 10.8A, VDD = 27V, VGS = 10V..

3. T < 10sec.


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Fig.5 Transfer Characteristics

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

Fig.3 On-Resistance Variation with Temperature

Fig.4 On-Resistance Variation with

Gate to Source Voltage

Fig.6 Body Diode Forward Voltage Variation with Source Current and

Temperature

-50 -25 0 25 50 75 100 125 1500.6

0.8

1.0

1.2

1.4

1.6

1.8

VGS

=10V

ID=8A

RD

S(O

N),

(Norm

aliz

ed)

Dra

in-S

ourc

e O

n-R

esis

tance

TJ, Junction Temperature [

oC]

2 4 6 8 100

10

20

30

40

※ Notes :

ID = 8A

TA = 25

RD

S(O

N) [m

Ω],

Dra

in-S

ourc

e O

n-R

esis

tance

VGS

, Gate to Source Volatge [V]

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

10-1

100

101

TA=25

※ Notes :

VGS

= 0V

I DR, R

eve

rse

Dra

in C

urr

en

t [A

]

VSD

, Source-Drain voltage [V]

0 1 2 3 4 50

4

8

12

16

VGS

, Gate-Source Voltage [V]

TA=25

※ Notes :

VDS

= 5V

I D, D

rain

Cu

rre

nt [A

]

5 10 15 200

5

10

15

20

25

30

VGS

= 10V

VGS

= 4.5V

Dra

in-S

ourc

e O

n-R

esis

tance [mΩ

]

ID, Drain Current [A]

0.0 0.5 1.0 1.5 2.00

5

10

15

20

8.0V

4.5V 3.5V

VGS

= 10V

5.0V

4.0V

3.0V

I D,

Dra

in C

urr

ent

[A]

VDS

, Drain-Source Voltage [V]


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Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs.

Case Temperature

Fig.11 Transient Thermal Response

Curve

0 2 4 6 80

2

4

6

8

10

※ Note : ID = 8A

VG

S,

Ga

te-S

ourc

e V

olta

ge

[V

]

QG, Total Gate Charge [nC]

25 50 75 100 125 1500

10

20

30

I D, D

rain

Curr

ent [A

]

TC, Case Temperature [ ]

10-4

10-3

10-2

10-1

100

101

102

103

10-3

10-2

10-1

100

101

※ Notes :

Duty Factor, D=t1/t

2

PEAK TJ = P

DM * Z

θ JC * R

θ JC(t) + T

C

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

Zθ

JC ,

Therm

al R

esponse

t1, Rectangular Pulse Duration [sec]

10-1

100

101

102

10-1

100

101

102

1s

100 ms

DC

10 ms

10s

Operation in This Area

is Limited by R DS(on)

Single Pulse

TJ=Max rated

TC=25

I D, D

rain

Curr

ent [A

]

VDS


0 5 10 15 20 25 300

100

200

300

400

500

600

Ciss

= Cgs

+ Cgd

(Cds

= shorted)

Coss

= Cds

+ Cgd

Crss

= Cgd

※ Notes ;

1. VGS

= 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Ca

pa

cita

nce

[p

F]

VDS



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Package Dimension

PowerDFN33 (3.3x3.3mm)

Dimensions are in millimeters, unless otherwise specified


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DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd.

Documents

M MDV1528 - magnachip.com Trench MOSFET 30V, 16A, 1 8. m ... MDV1528 is suitable for DC/DC converter and general purpose applications. D G S ... 5.1 7.3 9.5 …