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R. Anand Theerthan, Alla Artemenko U‐Chan Chung,Catherine Elissade & Mario Maglione
Metz , 15 Nov 2012
115/11/2012
OutlinePart 1 – Fe doped Ba
Macroscopic:1. Domain wall relaxation in Fe doped BaTiO3 single crystals
I i h i KTiOPO i l t l i l t i2. Ionic space charges in KTiOPO4 single crystals: piezoelectricresonance as a probe for ions accumulation at surfaces
3. Confirmation using SHG mapping3 g pp g4. Electronic space charges in BaTiO3 core‐shell composites :
linking giant dielectric permittivity to local charged defects
Mi iMicroscopic:1. Polaron relaxation in Fe doped BaTiO3 single crystals
15/11/2012 2
RelaxationPart 1 – Fe doped Ba
R. Coelho, Physics of Dielectrics
315/11/2012
Charge Localisation in Single CrystalsPart 1 – Fe doped Ba
105105
BaTiO :ε1
104104
BaTiO3: 1. oxidized2104104
3
2. raw3. reduced
103103
1
2
102102
f = 1 kHz
100 200 400 600 800
100 200 400 600 800
Bidault et al. Phys.Rev.B 49, 7868 (1994)
15/11/2012 4
Is it possible to evidence such space charges at much lower temperatures?
Fe doped BaTiO3 Single crystalsPart 1 – Fe dopedBaTiO3
Iron doping to have heterovalent impurity
Substitution of Ti4+ by Fe3+ leads to creation of oxygen vacancies
Localization of free charges at the domain walls
Schematic of localization of free charges at domainwalls
Under magnetic field this localization is disturbedUnder magnetic field this localization is disturbed
Physics of Dielectrics for the Engineer by R. Coelho, (1979)
515/11/2012
Magnetic Tuning of Domain Wall RelaxationPart 1 – Fe dopedBaTiO3
BTO:Fe 0.075 % BTO:Fe 0.3 %
Temperature governs the number of domains
615/11/2012
Ionic mobility in KTP
In Colloboration with Pr. Vincent Rodriquez (ISM)
715/11/2012
Potassium Titanyl Phosphate(KTiOPO4)Part 2 – Ionic mobility
in KTP
Paraelectric Ferroelectric
Ferroelectric transition at 1203 KKTP displays combination of Ferroelectric, piezoelectric, pyroelectric and
superionic propertiesSuperionic transition is close to 200KMobility of potassium ions in the cavities along C axis is responsible for
high ionic conductivity of KTP
815/11/2012
g
d2
Diapositive 8
d2 1. Talk about K role in ferroelectric transition,
at the end of this slide say - our goal is to establish a connection between ionic mobility and piezoelectric resonance since potassiul ion is involved in both.Dayalu; 05/10/2011
Conductivity MeasurementPart 2 – Ionic mobilityin KTP
0.48eV
At 200K KTP stops being an ionic conductor.
Conductivity can be measured only along c axis
915/11/2012
Pyroelectric MeasurementPart 2 – Ionic mobilityin KTP
Electroded face
Pyroelectric cofficient ‐ 2.3 nC cm‐2 K‐1Pyroelectric cofficient 2.3 nC cm K
P. Urenski and G. Rosenman, J.Phys D: Appl. Phys. 33 (2000) 2069
1015/11/2012
Splitting of PiezoresonancePart 2 – Ionic mobilityin KTP
Electroded face
c
Electroded face
a
Length ModeLength Mode
1115/11/2012
Splitting of Piezoresonance…ContdPart 2 – Ionic mobilityin KTP
El d d fElectroded face
Thickness Mode
1215/11/2012
Origin of SplittingPart 2 – Ionic mobilityin KTP
b
a
Domain Wall orientation
Splitting happens in all directions.
Multitude of domains can cause only broadening but not splitting
Hence domains are not at the origin of splitting
1315/11/2012 P Pernot‐Rejmàkovà et al, J. Phys.: Condens. Matter, 15 (2003) 1613
Origin of splitting…. contdPart 2 – Ionic mobilityin KTP
Bias Experiment:
KTP
400 V/cm
Field cooling
1415/11/2012
Macroscopic Ionic Space ChargePart 2 – Ionic mobilityin KTP
S li i i i i i ( K) i d b ild f
A.Theerthan et alPhys. Rev. B 85, 024103 (2012)
Splitting at superionic transition (200 K) is due to build up of spacecharge which change the elastic compliance.
Tuning of piezoresonance splitting under an electric field corroborates
1515/11/2012
the above argument
ConfirmationPart 2 – Ionic mobilityin KTP
1615/11/2012
RecapPart 2 – Ionic mobilityin KTP
KTP undergoes superionic transition at 200 K
At the same temperature piezoelectric resonanced ll d fi d littiundergoes a well defined splitting
Building up of ionic space charges in the single crystals isBuilding up of ionic space charges in the single crystals isat the origin of the splitting.
How to probe space charge in KTP ?
1715/11/2012
How to probe space charge in KTP ?
Part 2 – SHG Mappingin KTP
1815/11/2012
Basics of SHGPart 2 – SHG Mappingin KTP
Non centrosymmetric
Output frequency = 2 x Incident frequency
Output wavelength = ½ x Incident wavelength
1915/11/2012
Output wavelength = ½ x Incident wavelength
Probing of Space Charge in GlassesPart 2 – SHG Mappingin KTP
Local centrosymmetry of glasses is broken under an electric field
Example: Soda lime glass (SiO2 + Na2O + CaO + MgO + K2O + Al2O3)
1.5 kV
Air poledAir poled
SHG i f l t b h
2015/11/2012
SHG is very useful to probe space charges.
Marc Dussauze et al; J. Phys. Chem. C, 114 (2010) 12754
SHG Mapping of BaTiO3 Single CrystalPart 2 – SHG Mapping
in KTP
In BaTiO3 no ionic conductivity unlike KTP
Surface Surface MapMap In In DepthDepth MapMap-40
-20
0
12 000
14 000
16 000
18 000Surfacepp pp pp
20
40
60
4 000
6 000
8 000
10 000
12 000
INte
nsity
5 µm5 µm
Z (μm)
80
100
50 40 30 20 10 0 10
2 0002 µm
5 µm5 µm
-10
5 000
5 500Y (μm)
-5
0
5
10 2 500
3 000
3 500
4 000
4 500
INte
nsity
Z (μm)
15
20
25
50 40 30 20 10
500
1 000
1 500
2 000
2 µm
Z
2115/11/2012
-50 -40 -30 -20 -10
Y (μm)
SHG Mapping of Unpoled KTPPart 2 – SHG Mappingin KTP
Surface Surface MapMap-25‐25273 K
In In DepthDepth MapMap293 K 200 K
-20
-15
-10
-5
0
5
10
(a.u
.)
300
400
500
600
700
800
INte
nsity0Y (μm)
-40
-20
0
20
40
60
80
100
120
Z (µ
m)
200
300
400
500
600
700
INte
nsity
-40
-20
0
20
40
60
80
100
120
Z (µ
m)
200
300
400
500
600
700
INte
nsity
0
Z (μm)
Z (μm) 0
15
20
25
-20 -10 0 10 20 (a.u.)
100
200
2
-25
-20
-15 700
800
+25
‐25200 K
140
160
180
200
-10 -5 0 5 10 Y (µm)
0
100
200
1
140
160
180
200
-10 -5 0 5 10 Y (µm)
0
100
200
1
200
Y (μm) Y (μm)
200
Unlike BTO SHG intensity is high at the 15
-10
-5
0
5
10
15
20
(a.u
.)
200
300
400
500
600
INte
nsity
2
0Y (μm)surface in KTP
25
-20 -10 0 10 20 (a.u.)
1002
-25
-20
-15 700
800
+25
‐25170 K
-10
-5
0
5
10
15
20
(a.u
.)
100
200
300
400
500
600
INte
nsity
2
0
+25
Y (μm)
2215/11/2012
25
-20 -10 0 10 20 (a.u.)
100
‐25 0 +25+25
X (μm)
Periodically Poled KTP (PPKTP)Part 2 – SHG Mappingin KTP
What is Periodically Poled KTP ?bb
a
c
2315/11/2012 Thesis: Carlota Canalias, 2005
SHG Mapping of PPKTPPart 2 – SHG Mappingin KTP
b Surface mapSurface Surface MapMap
298 K 233 K-1.0
0.0
1.0
2.0
3.0
4.0
250
300
350
m)
350-1.0
0.0
1.0
2.0
3.0
4.0
250
300
350
m)
350
a
c
5.0
6.0
7.0
8.0
9.0
10.0
11 0
50
100
150
200
INte
nsity
4
Z (μm
50
5.0
6.0
7.0
8.0
9.0
10.050
100
150
200
INte
nsity
4
Z (μm
50
200 K
11.0
0 20 40 60Y (µm)
Y (μm)
11.0
0 20 40 60
Y (μm)
170 K
-1.0
0.0
1.0
2.0
3.0 250
300
350
m)
200 K
350-1.0
0.0
1.0
2.0
3.0
4 0
250
300
350
m)
170 K
350
4.0
5.0
6.0
7.0
8.0
9.0
10.050
100
150
200
INte
nsity
4
Z (μm
50
4.0
5.0
6.0
7.0
8.0
9.0
10.050
100
150
200
INte
nsity
4
Z (μm
5011.0
0 20 40 60
Y (μm)
50
2415/11/2012
11.0
0 20 40 60Y (µm)
Y (μm)
50
SHG Mapping of PPKTPPart 2 – SHG Mappingin KTP
b In Depth map In In DepthDepth MapMap298 K 233 K
-40
-20
0
20
40
60700
800
900
1 000
1 100
1 200
itym)
01200
-40
-20
0
20
40
60
80
700
800
900
1 000
1 100
1 200
nsitym)
0
1200
a
c
80
100
120
140
160
180
200 0
100
200
300
400
500
600
INte
ns
2
Z (μm
200 0
80
100
120
140
160
180
200 0
100
200
300
400
500
600
INte
n
2
Z (μm
200 0
200 K 170 K
200
-10 0 10 20Y (µm)
0
Y (μm)
200 0 200
-10 0 10 20Y (µm)
0
Y (μm)
200 0
Localization at the domain walls
-40
-20
0
20
40
60700
800
900
1 000
1 100
1 200
ym)
01200
-40
-20
0
20
40
60700
800
900
1 000
1 100
1 200
ym)
0
1200
80
100
120
140
160
180 100
200
300
400
500
600
INte
nsity
2
Z (μm
80
100
120
140
160
180
(µ)
100
200
300
400
500
600
700
INte
nsity
2
Z (μm
200
-10 0 10 20Y (µm)
0
Y (μm)200 0
2515/11/2012
200
-10 0 10 20Y (µm)
0
Y (μm)200 0
In Depth Map Continued….Part 2 – SHG Mappingin KTP
SHG SHG mappingmapping of of domainsdomains withwith temperaturetemperatureb In Depth map
-40
-201 200
a
c
0
20
40
60
80
100500
600
700
800
900
1 000
1 100
INte
nsity
Z (μm)
c120
140
160
180
200
-10 0 10 20Y (µm)
0
100
200
300
400
2
Y (μm)Y (μm)
2615/11/2012 Domain Domain wallswalls
General ConclusionPart 2 – SHG Mappingin KTP
Splitting of piezoresonance in KTP isattributed to build up of space charges
Localization of free charges on the domainwalls inside KTP crsytals was observed.
Both unpoled and PP KTP go to a minimum in SHG intensity around 200 K – 230 K, the temperature range where conducitivty starts to slow down.
2715/11/2012
OutlinePart 1 – Fe doped Ba
Macroscopic:1. Domain wall relaxation in Fe doped BaTiO3 single crystals
I i h i KTiOPO i l t l i l t i2. Ionic space charges in KTiOPO4 single crystals: piezoelectricresonance as a probe for ions accumulation at surfaces
3. Confirmation using SHG mapping3 g pp g4. Electronic space charges in BaTiO3 core‐shell composites :
linking giant dielectric permittivity to local charged defects
Mi iMicroscopic:1. Polaron relaxation in Fe doped BaTiO3 single crystals
15/11/2012 28
Control of interfaces in ceramicsPart 3: BTO Ceramics
Coating of individual particlesBaTiO @SiOBaTiO3@SiO2
200nm200nm
200nm
50 nm50nm
control of the design at the nanoscalecontrol of the design at the nanoscaleleading a loss barrierlimited interdiffusion and grain growth during sinteringlimited interdiffusion and grain growth during sintering
Mornet, S. and coll., Chem. Mater. 2005, 17, 4530
Hubert, C. and coll., Ceram. Int. 2004, 30, 1241Chen, R. Z. and coll., Mater. Lett., 2002, 54, 314
29
Control of Free chargesPart 3: BTO @ SiO2Ceramics
Spark Spark Plasma Sintering under reducing Plasma Sintering under reducing conditionsconditionsconditionsconditions
Spark Plasma Sintering (SPS)BaTiO3@SiO2
Sintering
BaTiO 00 nm
ReducingConditions
20nm
T= 1100ºC; t= 3’; Atm.: Vacuum; P= 50 MPaBaTiO3= 500 nmSiO2= 5 nm
Post AnnealingT= 800ºC; t= 10h; Atm.: Air
Papyex BaTiO3@SiO2
30M.Maglione ISAF‐ECAPD‐PFM 07/2012
Evidence for Free ChargesPart 3: BTO @ SiO2Ceramics
Blue color due to reduction of Ti4+ to Ti3+COATED COATED
UNCOATED UNCOATED
A t k t l A l Ph L tt ( )Artemenko et al Appl. Phys. Lett. 97, 132901 (2010)
31M.Maglione ISAF‐ECAPD‐PFM 07/2012
Gaint PermittivityPart 3: BTO @ SiO2Ceramics
‐Giant Permittivity: ε’= 120000 – 140000Giant Permittivity: ε 120000 140000‐Low Stable Dielectric Losses: tan δ= 5%‐Ferroelectricity Not Cancelled: Tc= 400 K
Applied Physics Letters 2009, 94, 072903
32M.Maglione ISAF‐ECAPD‐PFM 07/2012
Gaint permittivity relaxationPart 3: BTO @ SiO2Ceramics
C(F)
Activation energy E= 0.1 eV
Applied Physics Letters 2009, 94, 072903
33M.Maglione ISAF‐ECAPD‐PFM 07/2012
Relaxation ProcessPart 3: BTO @ SiO2Ceramics
At hi h t t f h ( l t d tAt high temperatures, free charges (related to oxygen vacancies) can follow the alternating
l t i fi ld h l i ti i f ltelectric field : a space charge polarisation is feltwhich increase the low frequency permittivityAt low temperatures free charges are fullytrapped on lattice sites and the space charge polarisation can no more follow the alternatingelectric field : a dielectric relaxation occursMicroscopic evidence for this charge trapping?
34M.Maglione ISAF‐ECAPD‐PFM 07/2012
Microscopic evidence for free charge trapping : EPRPart 3: BTO @ SiO2Ceramics
35M.Maglione ISAF‐ECAPD‐PFM 07/2012
Temperature dependencePart 3: BTO @ SiO2Ceramics
100K
60K
100K
50K
20K
4K
36M.Maglione ISAF‐ECAPD‐PFM 07/2012
Activation energyPart 3: BTO @ SiO2Ceramics
A t k t l A l Ph L tt ( )
37
Artemenko et al Appl. Phys. Lett. 97, 132901 (2010)
M.Maglione ISAF‐ECAPD‐PFM 07/2012
Part 3: BTO @ SiO2Ceramics
Control of giant permittivity in Control of giant permittivity in h llh ll iiBaTiO3BaTiO3 core@shellcore@shell compositescomposites
Silicacoatingcoating
Enables coPrevents re-oxidation
Enables co-existence giant
permittivity/
Reduceslosses
p yferroelectricity
Chung et alAPL 2009, 94, 072903
3838
losses
OutlinePart 1 – Fe doped Ba
Macroscopic:1. Domain wall relaxation in Fe doped BaTiO3 single crystals
I i h i KTiOPO i l t l i l t i2. Ionic space charges in KTiOPO4 single crystals: piezoelectricresonance as a probe for ions accumulation at surfaces
3. Confirmation using SHG mapping3 g pp g4. Electronic space charges in BaTiO3 core‐shell composites :
linking giant dielectric permittivity to local charged defects
Mi iMicroscopic:1. Polaron relaxation in Fe doped BaTiO3 single crystals
15/11/2012 39
Polaron RelaxationPart 1 – Fe dopedBaTiO3
Electron Hopping
BTO:Fe 0.075 % BTO:Fe 0.3 %
4015/11/2012
Magnetic Tuning of Polaron RelaxationPart 1 – Fe dopedBaTiO3
20 K 30 K20 K 30 K
BTO: Fe 0 3 %70 K
BTO: Fe 0.3 %
4115/11/2012
ESR on Fe doped BaTiO3Part 1 – Fe dopedBaTiO3
Fe3+ surrounded by 6 Fe surrounded by 6 oxygen
VO ‐ Fe3+‐ VO
4215/11/2012
Case of SrTiO3 and KTaO3Part 1 – Fe dopedBaTiO3
SrTiO3 KTaO3
Concentration of free charges are too low to realize the magnetic tuning effect
4315/11/2012 O.Bidault, M.Maglione, M. Actis, M. Kchikech and B. Salce, Phys. Rev B 52 (1995) 4191
SummaryPart 3: BTO @ SiO2Ceramics
D h f d i ll d f h • Due to the presence of domain wall and free charges we can observe realxation at low temperaturesI i h l ff t th i l t i• Ionic space charges can also affect the piezoelectricproperties (Phys. Rev. B 85, 024103 (2012))
• Accumulation at surfaces as well as at domain walls is• Accumulation at surfaces as well as at domain walls isseen
• Space charges can greatly increase the dielectric• Space charges can greatly increase the dielectricparameters of ferroelectric (and other oxides)
• At the microscopic level polaron can be formed due toAt the microscopic level polaron can be formed due to free charges and that can be tuned by magnetic field
15/11/2012 44
4515/11/2012
NamasteNamaste
4615/11/2012
Part 2 – SHG Mappingin KTP
Why Periodic Poling is important?
To maintain efficient energy transfer for non linearfrequency, the interacting waves must be in phase witheach other.Af i l h ll d h l h hAfter a certain length called coherence length the
interacting waves will go out of phase relative to eachother.
Argon poled
P f M hPerfect Match
PPKTP
Mis Match
4715/11/2012