PAUL SCHERRER INSTITUT

M. FurlanI. JerjenE. Kirk

Ph. LerchA. Zehnder

Cryogenic Detectors Development at PSI

PAUL SCHERRER INSTITUT

PSI Cryo-detector Work

•SIS STJ

• Ta-STJ, Single pixel and strips

• Mn- X-Ray, Optical

•Caloriemeter

• MoAu TES, Mn-X-ray

•SIN STJ

PAUL SCHERRER INSTITUT

SiSi-nitride

Mo/Au

PAUL SCHERRER INSTITUT

Mo/Au Microcalorimeter• Mo/Au-TES• Au Absorber• Si-nitride membrane, “bad” thermal link• Thesis J. Olsen.

PAUL SCHERRER INSTITUT

Ta-Al/AlOx/Al-Ta-Nb produced by E. Kirk

Basic tunneling junction

PAUL SCHERRER INSTITUT

STJ Detector fabrication in cross section

Photoresist etch mask, dry and wet etching to pattern strips …

… and detectors Lift-off mask for SiO2 … … and wiring

PAUL SCHERRER INSTITUT

I-V characteristics

PAUL SCHERRER INSTITUT

Response to red LED

PAUL SCHERRER INSTITUT

PAUL SCHERRER INSTITUT

VUV spectrometer 10 - 30 eV

Ta-STJ

20’000 e/eV@ 300 mK

IR rejection !

PAUL SCHERRER INSTITUT

imaging with diffusion

PAUL SCHERRER INSTITUT

energ

ypositio

n

5.9 keV

6.4 keV

Substrate Phonons

PAUL SCHERRER INSTITUT

1.0

0.8

0.6

0.4

0.2

0.0

Norm

aliz

ed c

ounts

7.06.56.05.55.0

Energy (keV)

Silicon detector, 300K, commercial tunnel junction, 550 mK, PSI calorimeter, 100 mK, PSI

STJ, 500 mK

calorimeter, 100 mK

Si, 300 K

Summary Mn-X-ray results at PSI

PAUL SCHERRER INSTITUT

Kurakados 40series x 20paralle STJ’s, each 50m Diameter

PAUL SCHERRER INSTITUT

Future plans at PSI

• Close SIS-STJ work in 2005

• Thesis I. Jerjen: Sensitivity of Ta-STJ to optical light

• Measure 10-50eV photons

• Collaboration with Kurakado on series-STJ fabrication and testing

• SIN Junction studies

• + S being Absorber, small gap

• + N being Si (degenerated doped).

• ++ Profit from Si technology

• + No magnetic fields

• - no backtunneling

• - low temperature (<100mK)