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ECEN620: Network Theory Broadband Circuit Design Fall 2012Lecture 21: Transimpedance Amplifiers (TIAs)
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Sam Palermo Analog & Mixed-Signal Center
Texas A&M University
ECEN620: Network Theory Broadband Circuit Design
Fall 2012
Lecture 21: Transimpedance Amplifiers (TIAs)
Announcements & Agenda
• Exam 3 is postponed to Dec. 11 during scheduled final time
• Project presentation will still need to be prepared and turned in by 5PM on Dec 11, but will not be presented
• Optical Receiver Overview • Transimpedance Amplifiers
• Common-Gate TIAs • Feedback TIAs • Common-Gate & Feedback TIA Combinations
2
Optical Receiver Technology
• Photodetectors convert optical power into current • p-i-n photodiodes • Integrated metal-semiconductor-
metal photodetector
• Electrical amplifiers then
convert the photocurrent into a voltage signal • Transimpedance amplifiers • Limiting amplifiers • Integrating optical receiver
3
RF
M1
M2
RD
VDD
VA
TIA
LA stages
TIA Output
LA Output
• Key design objectives • High transimpedance gain • Low input resistance for high bandwidth and
efficient gain
Transimpedance Amplifier (TIA)
4
( )
( )T
in
outT
Zi
vZ
log20by dB of unitsin expressed Also
anceTransimped
Ω
Ω=
ZT
TIAiin vout
Resistive Front-End
• Direct trade-offs between transimpedance, bandwidth, and noise performance
5
DLDinpdB
LinT
CRCRBW
RRR11
3 ===
==
ω
L
Drmsinn
DLL
outninn
DLTnoutn
RCKT
I
CRkT
RV
I
CkTdf
fRCjR
RkTdfZIV
=
==
=
+
== ∫∫∞∞
,,
22
2,2
,
0
2
0
222, 21
4π
CDiin
RL
vout
RL CD
V2n,out
I2n,R
[Razavi]
Common-Gate TIA
• Input resistance (input bandwidth) and transimpedance are decoupled
6
( ) mombm
Doin
DT
grggRrR
RR1
1≈
+++
=
=
IBiin Rin
VB
VDD
RD
vout gm(-vi) ro gmb(-vi) RD
vout
vi
Riniin
[Razavi]
Common-Gate TIA Frequency Response
• Often the input pole may dominate due to large photodiode capacitance (100 – 500fF)
7
( )outDmbm
in
D
in
out
CsRgg
Cs
Riv
+
+
+=
11:
11
r transistor Neglecting o
IBiin
VB
VDD
RD
vout
Cin
Cout
[Razavi]
Common-Gate TIA Noise
• Both the bias current source and RD contribute to the input noise current
• RD can be increased to reduce noise, but voltage headroom can limit this
• Common-gate TIAs are generally not for low-noise applications
• However, they are relatively simple to design with high stability
8
( )
+=
+=+=
HzA
HzV
r transistor Neglecting
2
2
o
Dminn
DD
mDRDnMnoutn
RgkTI
RR
gkTRIIV
1324
1324
:
22,
22
22,
22,
2,
[Razavi]
Regulated Cascode (RGC) TIA
9
[Park ESSCIRC 2000] • Input transistor gm is boosted by common-source amplifier gain, resulting in reduced input resistance
• Requires additional voltage headroom
• Increased input-referred noise from the common-source stage
CMOS 20GHz TIA
10 333222 RgARgA mm −==
• An additional common-gate stage in the feedback provides further gm-boosting and even lower input resistance
• Shunt-peaking inductors provide bandwidth extension at zero power cost, but very large area cost
[Kromer JSSC 2004]
Feedback TIA w/ Ideal Amplifier
• Input bandwidth is extended by the factor A+1 • Transimpedance is approximately RF • Can make RF large without worrying about voltage
headroom considerations 11
( )
( )IDFTinp
Fin
FT
pTT
CCRA
CR
ARR
RA
AR
sRsZ
++
==
+=
+=
+−=
111
1
11
ω
ω
: AmplifierBandwidth Infinite With
-A
CDiin
RF
vout
CIRin
Feedback TIA w/ Finite Bandwidth Amplifier
12
( )
( ) ( )
( )
1
1
11
11
11
22
+=
++
=
+=
+=
++
−=
+=
+=
ARR
TCRTCRA
Q
TCRA
RA
AR
sQsRsZ
sTA
sAsA
Fin
ATF
ATF
ATFo
FT
ooTT
A
A
ω
ωω
ω
: AmplifierBandwidth Finite With
-A(s)
CDiin
RF
vout
CIRin
• Finite bandwidth amplifier modifies the transimpedance transfer function to a second-order low-pass function
Feedback TIA w/ Finite Bandwidth Amplifier
13
• Non-zero amplifier time constant can actually increase TIA bandwidth!!
• However, can result in peaking in frequency domain and overshoot/ringing in time domain
• Often either a Butterworth (Q=1/sqrt(2)) or Bessel response (Q=1/sqrt(3)) is used • Butterworth gives maximally flat
frequency response • Bessel gives maximally flat group-
delay Butterworth
Bessel
[Sackinger]
-A(s)
CDiin
RF
vout
CI1
RFCT
1TA
ω
Aopen
ADC
Feedback TIA Transimpedance Limit
14
• Maximum RT proportional to amp gain-bandwidth product • If amp GBW is limited by technology fT, then in order to
increase bandwidth, RT must decrease quadratically!
( ) ( )
( )3dB
3dB
bandwidth given afor possible maximum the yields expression above into Plugging
of case thanlarger times
:response hButterwort aFor
:response frequencyflat mazimallyfor response hButterwort a assume we If
ωω
ωωω
ω
≥
+
++
=
+=≈
+=
+==
===
TT
A
TFT
TFA
TFTF
A
TFAA
CRA
AA
RRA
AR
CRAT
CRAA
CRA
CRA
TQ
11
1
102211
212
1
0
23dBT
AT C
ARωω
≤ Maximum[Mohan JSSC 2000]
Feedback TIA
15
( )Dmmout
Dm
Fin
FDm
DmT
Dm
RggR
RgRR
RRg
RgR
RgA
12
1
1
1
1
11
1
1
+=
+=
+=
=1 of gain ideal an hasfollower source thethat Assuming
RF
M1
M2
RD
VDD
VA
iinCD
vout
• CMOS inverter-based TIAs allow for reduced voltage headroom operation
• Multiple inverter stages in feedback provide higher gain at the cost of reduced stability
• Diode-connected transistor loads allow for high-frequency internal poles
CMOS Inverter-Based Feedback TIA
16
[Ingels JSSC 1994]
Common-Gate & Feedback TIA
17
• Common-gate input stage isolates CD from input amplifier capacitance, allowing for a stable response with a variety of different photodetectors
• Transimpedance is still approximately RFA/(1+A)
Common-Gate
Feedback TIA
[Mohan JSSC 2000]
RF RF
BJT Common-Base & Feedback TIA
18
• Transformer-based negative feedback boosts gm with low power and noise overhead
• Input series peaking inductor isolates the photodetector capacitance from the TIA input capacitance
• High frequency techniques allow for 26GHz bandwidth with group delay variation less than 19ps
[Li BCTM 2011]
Next Time
• Broadband amplifiers • Limiting amplifiers • Transimpedance amplifiers
• CML gate design
19