Features 5V CMOS and TTL Compatible

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Hermetically Sealed

Ceramic Package

Surface Mount

Light Weight

Complementary P-Channel Available- IRHLUB7970Z4, IRHLUBN7970Z4 IRHLUBC7970Z4, IRHLUBCN7970Z4

ESD Rating: Class 0 per MIL-STD-750, Method 1020

IR HiRel R7 Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. The device is ideal when used to interface directly with most logic gates, linear IC’s, micro-controllers, and other device types that operate from a 3.3-5V source. It may also be used to increase the output current of a PWM, voltage comparator or an operational amplifier where the logic level drive signal is available.

Absolute Maximum Ratings Pre-Irradiation

Symbol Parameter Value Units

ID1 @ VGS = 4.5V, TC = 25°C Continuous Drain Current 0.8

A ID2 @ VGS = 4.5V, TC = 100°C Continuous Drain Current 0.5

IDM @TC = 25°C Pulsed Drain Current 3.2

PD @TC = 25°C Maximum Power Dissipation 0.6 W

Linear Derating Factor 0.005 W/°C

VGS Gate-to-Source Voltage ± 10 V

EAS Single Pulse Avalanche Energy 26.6 mJ

IAR Avalanche Current 0.8 A

EAR Repetitive Avalanche Energy 0.06 mJ

dv/dt Peak Diode Recovery dv/dt 4.0 V/ns

TJ Operating Junction and

°C -55 to + 150

TSTG Storage Temperature Range

Lead Temperature 300 (for 5s)

Weight 43 (Typical) mg

UB (SHIELDED METAL LID)

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Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number

IRHLUB770Z4 100 kRads(Si) 0.68 0.8A JANSR2N7616UB

IRHLUB730Z4 300 kRads(Si) 0.68 0.8A JANSR2N7616UB

Description

For Footnotes, refer to the page 2.

Refer to Page 10 for 3 Additional Part Numbers - IRHLUBN770Z4, IRHLUBC770Z4, IRHLUBCN770Z4

R 7

IRHLUB770Z4 JANSR2N7616UB

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (UB)

PD-95813J

60V, N-CHANNEL REF: MIL-PRF-19500/744

TECHNOLOGY

International Rectifier HiRel Products, Inc.

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International Rectifier HiRel Products, Inc.

Thermal Resistance Symbol Parameter Min. Typ. Max. Units

RJA Junction-to-Ambient ––– ––– 200 °C/W

RJL Junction-to-Lead ––– ––– 40

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Symbol Parameter Min. Typ. Max. Units Test Conditions

BVDSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA

BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.07 ––– V/°C Reference to 25°C, ID = 1.0mA

RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.68 VGS = 4.5V, ID2 = 0.5A

VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA

VGS(th)/TJ Gate Threshold Voltage Coefficient ––– -4.04 ––– mV/°C

Gfs Forward Transconductance 0.23 ––– ––– S VDS = 10V, ID2 = 0.5A

IDSS Zero Gate Voltage Drain Current

––– ––– 1.0 µA

VDS = 48V, VGS = 0V

––– ––– 10 VDS = 48V,VGS = 0V,TJ =125°C

IGSS Gate-to-Source Leakage Forward ––– ––– 100 nA

VGS = 10V

Gate-to-Source Leakage Reverse ––– ––– -100 VGS = -10V

QG Total Gate Charge ––– ––– 3.6

nC

ID1 = 0.8A

QGS Gate-to-Source Charge ––– ––– 1.5 VDS = 30V

QGD Gate-to-Drain (‘Miller’) Charge ––– ––– 1.8 VGS = 4.5V

td(on) Turn-On Delay Time ––– ––– 8.0

ns

VDD = 30V

Tr Rise Time ––– ––– 24 ID1 = 0.8A

td(off) Turn-Off Delay Time ––– ––– 30 RG = 24

tf Fall Time ––– ––– 12 VGS = 5.0V

Ls +LD Total Inductance ––– 8.4 ––– nH Measured from center of Drain pad to center of source pad

Ciss Input Capacitance ––– 166 –––

pF

VGS = 0V

Coss Output Capacitance ––– 42 ––– VDS = 25V

Crss Reverse Transfer Capacitance ––– 3.5 ––– ƒ = 100KHz

RG Gate Resistance ––– 9.5 ––– ƒ = 1.0MHz, open drain

Source-Drain Diode Ratings and Characteristics

Symbol Parameter Min. Typ. Max. Units Test Conditions

IS Continuous Source Current (Body Diode) ––– ––– 0.8 A

ISM Pulsed Source Current (Body Diode) ––– ––– 3.2

VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C,IS = 0.8A, VGS = 0V

trr Reverse Recovery Time ––– ––– 78 ns TJ = 25°C, IF = 0.8A, VDD ≤ 25V

Qrr Reverse Recovery Charge ––– ––– 75 nC di/dt = 100A/µs

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Footnotes:

Repetitive Rating; Pulse width limited by maximum junction temperature.

VDD = 25V, starting TJ = 25°C, L =83mH, Peak IL = 0.8A, VGS = 10V

ISD 0.8A, di/dt 130/µs, VDD 60V, TJ 150°C

Pulse width 300 µs; Duty Cycle 2%

Total Dose Irradiation with VGS Bias. 10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A.

Total Dose Irradiation with VDS Bias. 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A.

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International Rectifier HiRel Products, Inc.

Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Parameter Up to 300 kRads (Si)

1

Units Test Conditions Symbol Min. Max.

BVDSS Drain-to-Source Breakdown Voltage 60 ––– V VGS = 0V, ID = 250µA

VGS(th) Gate Threshold Voltage 1.0 2.0 V VDS = VGS, ID = 250µA

IGSS Gate-to-Source Leakage Forward ––– 100 nA VGS = 10V

IGSS Gate-to-Source Leakage Reverse ––– -100 nA VGS = -10V

IDSS Zero Gate Voltage Drain Current ––– 1.0 µA VDS = 48V, VGS = 0V

RDS(on) Static Drain-to-Source On-State Resistance (TO-39)

––– 0.65 VGS = 4.5V, ID2 = 0.5A

RDS(on) Static Drain-to-Source On-State Resistance (UB)

––– 0.68 VGS = 4.5V, ID2 = 0.5A

VSD Diode Forward Voltage ––– 1.2 V VGS = 0V, IS = 0.8A

IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.

1. Part numbers IRHLUB770Z4, IRHLUB730Z4 and additional part numbers listed on page 10

IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For Footnotes, refer to the page 2.

Radiation Characteristics

Table 2. Typical Single Event Effect Safe Operating Area

LET

(MeV/(mg/cm2))

Energy

(MeV)

Range

(µm)

VDS (V)

@ VGS =

0V

@ VGS =

-2V

@ VGS =

-3V

@ VGS =

-4V

@ VGS =

-5V

@ VGS =

-6V

38.1 358 43.9 60 60 60 60 60 60

60.9 659 54 60 60 60 60 60 –––

90.7 1375 75.4 60 60 ––– ––– ––– –––

Fig a. Typical Single Event Effect, Safe Operating Area

0

10

20

30

40

50

60

70

-6-5-4-3-2-10

Bia

s V

DS

(V

)

Bias VGS (V)

LET = 38.1

LET = 60.9

LET = '90.7

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International Rectifier HiRel Products, Inc.

Fig 2. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 1. Typical Output Characteristics

Fig 4. Normalized On-Resistance Vs. Temperature

Fig 5. Typical On-Resistance Vs Gate Voltage Fig 6. Typical On-Resistance Vs Drain Current

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.0

0.5

1.0

1.5

2.0

RD

S(o

n)

, Dra

in-to-

Sou

rce

On

Res

ista

nce

(N

orm

aliz

ed)

VGS = 4.5V

ID = 0.8A

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Fig 12. Maximum Drain Current Vs.Case Temperature Fig 11. Typical Source-Drain Diode Forward Voltage

Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage

Fig 8. Typical Threshold Voltage Vs

Temperature

Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature

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Fig 15. Maximum Effective Transient Thermal Impedance, Junction -to-Case

Fig 13. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy Vs. Drain Current

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Fig 16a. Unclamped Inductive Test Circuit Fig 16b. Unclamped Inductive Wave-

Fig 17b. Gate Charge Test Circuit Fig 17a. Gate Charge Waveform

Fig 18b. Switching Time Waveforms Fig 18a. Switching Time Test Circuit

tp

V(BR)DSS

IAS

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Case Outline and Dimensions - UB (Shielded Metal Lid Connected to 4th Pad)

Case Outline and Dimensions - UBN (Isolated Metal Lid, No 4th Pad)

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Case Outline and Dimensions - UBC (Shielded Ceramic Lid Connected to 4th Pad)

Case Outline and Dimensions - UBCN (Isolated Ceramic Lid, No 4th Pad)

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Additional Product Summary (continued from pages 1 and 3)

Product Summary

Part Number Radiation Level RDS(on) ID QPL Part Number

IRHLUBN770Z4 100 kRads(Si) 0.68 0.8A JANSR2N7616UBN

IRHLUBN730Z4 300 kRads(Si) 0.68 0.8A JANSF2N7616UBN

UBN (ISOLATED METAL LID)

Product Summary

Part Number Radiation Level RDS(on) ID QPL Part Number

IRHLUBC770Z4 100 kRads(Si) 0.68 0.8A JANSR2N7616UBC

IRHLUBC730Z4 300 kRads(Si) 0.68 0.8A JANSF2N7616UBC

UBC (SHIELDED CERAMIC LID)

Product Summary

Part Number Radiation Level RDS(on) ID QPL Part Number

IRHLUBCN770Z4 100 kRads(Si) 0.68 0.8A JANSR2N7616UBCN

IRHLUBCN730Z4 300 kRads(Si) 0.68 0.8A JANSF2N7616UBCN

UBCN (ISOLATED CERAMIC LID)

www.infineon.com/irhirel

Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555 Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776

San Jose, California 95134, USA Tel: +1 (408) 434-5000 Data and specifications subject to change without notice.

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IMPORTANT NOTICE

The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The

data contained herein is a characterization of the component based on internal standards and is intended to

demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and

analysis to determine suitability in the application environment to confirm compliance to your system requirements.

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For further information on the product, technology, delivery terms and conditions and prices, please contact your local

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