IRGP6650D EPbF Product Datasheet · IRGP6650DPbF IRGP6650D-EPbF 1 © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014

IRGP6650DPbF IRGP6650D-EPbF

1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014

Base part number Package Type Standard Pack Orderable Part Number Form Quantity

IRGP6650DPbF TO-247AC Tube 25 IRGP6650DPbF

IRGP6650D-EPbF TO-247AD Tube 25 IRGP6650D-EPbF

Absolute Maximum Ratings

Parameter Max. Units

VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 80 IC @ TC = 100°C Continuous Collector Current 50 ICM Pulse Collector Current, VGE = 15V 105 ILM Clamped Inductive Load Current, VGE = 20V 140

IFRM @ TC = 100°C Diode Repetitive Peak Forward Current 25

IFM Diode Maximum Forward Current 140

VGE Continuous Gate-to-Emitter Voltage ±20 V PD @ TC = 25°C Maximum Power Dissipation 306

W PD @ TC = 100°C Maximum Power Dissipation 153 TJ Operating Junction and -40 to +175

°C TSTG Storage Temperature Range Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

A

Thermal Resistance Parameter Min. Typ. Max. Units RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.49

°C/W RCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––

RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40

RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 3.35

VCES = 600V

IC = 50A, TC =100°C

tSC 5µs, TJ(max) = 175°C

VCE(ON) typ. = 1.65V @ IC = 35A

Applications Welding H Bridge Converters

Features Benefits

Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications

Optimized Diode for Full Bridge Hard Switch Converters Optimized for Welding and H Bridge Converters

Square RBSOA and Maximum Temperature of 175°C Improved Reliability due to Rugged Hard Switching Performance and High Power Capability

5µs Short Circuit Enables Short Circuit Protection Operation Positive VCE (ON) Temperature Co-efficient Excellent Current Sharing in Parallel Operation Lead-free, RoHS compliant Environmentally friendly

G C E Gate Collector Emitter

G

C

E C

C

G C

E

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

IRGP6650DPbF TO‐247AC

IRGP6650D‐EPbF TO‐247AD

E

G

n-channel

C

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IRGP6650DPbF/IRGP6650D-EPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 100µA V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.45 — V/°C VGE = 0V, IC = 1.0mA (25°C-175°C)

VCE(on) Collector-to-Emitter Saturation Voltage — 1.65 1.95

V IC = 35A, VGE = 15V, TJ = 25°C

— 2.05 — IC = 35A, VGE = 15V, TJ = 150°C — 2.10 — IC = 35A, VGE = 15V, TJ = 175°C

VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 1.0mA

VGE(th)/TJ Threshold Voltage Temperature Coeff. — -18 — mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C)

gfe Forward Transconductance — 22 — S VCE = 50V, IC = 35A, PW = 20µs

ICES Collector-to-Emitter Leakage Current — 1.0 50 VGE = 0V, VCE = 600V — 600 — VGE = 0V, VCE = 600V, TJ = 175°C

IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

VF Diode Forward Voltage Drop — 1.80 2.80

V IF = 8A

— 1.30 — IF = 8A, TJ = 175°C Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max Units Conditions

Qg Total Gate Charge (turn-on) — 75 — nC

IC = 35A Qge Gate-to-Emitter Charge (turn-on) — 20 — VGE = 15V Qgc Gate-to-Collector Charge (turn-on) — 30 — VCC = 400V Eon Turn-On Switching Loss — 300 —

µJ IC = 35A, VCC = 400V, VGE=15V

RG = 10, L=210µH, TJ = 25°C

Energy losses include tail & diode reverse recovery

Eoff Turn-Off Switching Loss — 630 — Etotal Total Switching Loss — 930 — td(on) Turn-On delay time — 40 —

ns tr Rise time — 30 — td(off) Turn-Off delay time — 105 — tf Fall time — 20 — Eon Turn-On Switching Loss — 640 —

µJ IC = 35A, VCC = 400V, VGE=15V

RG = 10, L=210µH, TJ = 175°C

Energy losses include tail & diode reverse recovery

Eoff Turn-Off Switching Loss — 930 — Etotal Total Switching Loss — 1570 — td(on) Turn-On delay time — 40 —

ns tr Rise time — 30 — td(off) Turn-Off delay time — 120 — tf Fall time — 60 — Cies Input Capacitance — 2220 — VGE = 0V Coes Output Capacitance — 130 — pF VCC = 30V Cres Reverse Transfer Capacitance — 65 — f = 1.0MHz

RBSOA Reverse Bias Safe Operating Area TJ = 175°C, IC = 140A

FULL SQUARE VCC = 480V, Vp ≤ 600V VGE = +20V to 0V

SCSOA Short Circuit Safe Operating Area 5 — — µs TJ = 150°C,VCC = 400V, Vp ≤ 600V VGE = +15V to 0V

Erec Reverse Recovery Energy of the Diode — 165 — µJ TJ = 175°C trr Diode Reverse Recovery Time — 50 — ns VCC = 400V, IF = 8A, VGE = 15V Irr Peak Reverse Recovery Current — 14 — A Rg = 22L=1.0mH, Ls=150nH

µA

Notes:

VCC = 80% (VCES), VGE = 20V, Rg = 10L=210µH.

R is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. fsw =40KHz, refer to figure 26.





Fig. 5 - Reverse Bias SOA TJ = 175°C; VGE = 20V

25 50 75 100 125 150 175

TC (°C)

0

20

40

60

80

100

I C (

A)

0.1 1 10 100

f , Frequency ( kHz )

20

30

40

50

60

70

80

90

Load

Cur

rent

( A

)

For both:Duty cycle : 50%Tj = 175°CTcase = 100°CGate drive as specifiedPower Dissipation = 153W

I

Square Wave:

VCC

Diode as specified

Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental)

25 50 75 100 125 150 175

TC (°C)

0

50

100

150

200

250

300

350

Pto

t (W

)

Fig. 4 - Forward SOA TC = 25°C; TJ ≤ 175°C; VGE = 15V

1 10 100 1000

VCE (V)

0.1

1

10

100

1000

I C (

A)

10µsec

100µsec

Tc = 25°CTj = 175°CSingle Pulse

DC 1msec

Fig. 2 - Maximum DC Collector Current vs. Case Temperature

10 100 1000

VCE (V)

1

10

100

1000

I C (

A)

Fig. 3 - Power Dissipation vs. Case Temperature





Fig. 10 - Typical VCE vs. VGE TJ = -40°C

Fig. 11 - Typical VCE vs. VGE TJ = 25°C

Fig. 6 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs

0 2 4 6 8 10

VCE (V)

0

20

40

60

80

100

120

140

I CE

(A

)

VGE = 18VVGE = 15VVGE = 12VVGE = 10VVGE = 8.0V

0 2 4 6 8 10

VCE (V)

0

20

40

60

80

100

120

140I C

E (

A)


0 2 4 6 8 10

VCE (V)

0

20

40

60

80

100

120

140

I CE

(A

)


0.0 1.0 2.0 3.0 4.0 5.0 6.0

VF (V)

0

20

40

60

80

100

120

140

I F (

A)

-40°C25°C175°C

Fig. 7 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs

5 10 15 20

VGE (V)

0

2

4

6

8

VC

E (

V)

ICE = 18A

ICE = 35A

ICE = 70A

Fig. 8 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 20µs

5 10 15 20

VGE (V)

0

2

4

6

8

VC

E (

V)

ICE = 18A

ICE = 35A

ICE = 70A

Fig. 9 - Typ. Diode Forward Voltage Drop Characteristics





Fig. 16 - Typ. Energy Loss vs. RG TJ = 175°C; VCE = 400V, ICE = 35A; VGE = 15V

Fig. 17 - Typ. Switching Time vs. RG TJ = 175°C; VCE = 400V, ICE = 35A; VGE = 15V

5 10 15 20

VGE (V)

0

2

4

6

8V

CE

(V

)

ICE = 18A

ICE = 35A

ICE = 70A

2 4 6 8 10 12 14 16

VGE (V)

0

20

40

60

80

100

120

140

I CE

(A

)

TJ = 25°C

TJ = 175°C

0 10 20 30 40 50 60 70

IC (A)

1

10

100

1000

Sw

ich

ing

Tim

e (n

s)

tR

tdOFF

tF

tdON

Fig. 13 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs

0 20 40 60 80 100

RG ()

10

100

1000

Sw

ich

ing

Tim

e (n

s)

tR

tdOFF

tF

tdON

Fig. 15 - Typ. Switching Time vs. IC

TJ = 175°C; VCE = 400V, RG = 10; VGE = 15V

0 10 20 30 40 50 60 70

IC (A)

0

1000

2000

3000

4000

Ene

rgy

(J)

EOFFEON

Fig. 12 - Typical VCE vs. VGE

TJ = 175°C

Fig. 14 - Typ. Energy Loss vs. IC

TJ = 175°C; ; VCE = 400V, RG = 10; VGE = 15V

0 20 40 60 80 100

Rg ()

500

1000

1500

2000

2500

3000

Ene

rgy

(J)

EOFF

EON





Fig. 22 - Typ. Diode ERR vs. IF TJ = 175°C

Fig. 20 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 8A; TJ = 175°C

2 4 6 8 10 12 14 16

IF (A)

0

5

10

15

20I R

R (

A)

RG = 47

RG = 10

RG = 100

RG = 22

0 20 40 60 80 100

RG (

0

4

8

12

16

I RR

(A

)

Fig. 19 - Typ. Diode IRR vs. RG TJ = 175°C

0 200 400 600 800

diF /dt (A/µs)

4

6

8

10

12

14

16

I RR

(A

)

Fig. 18 - Typ. Diode IRR vs. IF TJ = 175°C

2 4 6 8 10 12 14 16

IF (A)

0

50

100

150

200

250

Ene

rgy

(µJ)

RG = 10

RG = 47

RG = 100

RG = 22

0 200 400 600 800 1000

diF /dt (A/µs)

200

400

600

800

1000

QR

R (

nC)

22 10

100

47

16A

4A

8A

Fig. 21 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C

9 10 11 12 13 14 15 16

VGE (V)

0

4

8

12

16

20

Tim

e (µ

s)

0

50

100

150

200

250

Cu

rrent (A

)

Tsc

Isc

Fig. 23 - VGE vs. Short Circuit Time VCC = 400V; TC = 150°C





Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

0 100 200 300 400 500 600

VCE (V)

1

10

100

1000

10000

Cap

acita

nce

(pF

)

Cies

Coes

Cres

Fig. 24 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz

0 20 40 60 80

Q G, Total Gate Charge (nC)

0

2

4

6

8

10

12

14

16

VG

E, G

ate-

to-E

mitt

er V

olta

ge

(V) VCES = 400V

VCES = 300V

Fig. 25 - Typical Gate Charge vs. VGE ICE = 35A

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

1

The

rmal

Res

pons

e (

Z thJ

C ) 0.20

0.10

D = 0.50

0.020.01

0.05

SINGLE PULSE( THERMAL RESPONSE )

Notes:1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc

Fig 26. Maximum Diode Repetitive Forward Peak Current vs. Case Temperature

Ri (°C/W) i (sec)

0.03980 0.000061

0.10562 0.000090

0.20665 0.002600

0.13624 0.015477

J

J

1

12

23

3

R1

R1R2

R2R3

R3

Ci= iRiCi= iRi

C

C

4

4

R4

R4

100 125 150 175

Case Temperature (°C)

0

10

20

30

40

50

60

70

Rep

etiti

ve P

eak

Cur

rent

(A

)

D=0.4

D=0.2

D=0.1





Fig. 28 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

10

The

rmal

Res

pon

se (

Z th

JC )

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE( THERMAL RESPONSE )

Notes:1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W) i (sec)

0.11659 0.000047

1.13634 0.000298

1.43445 0.002865

0.66410 0.026578

J

J

1

12

23

3

R1

R1R2

R2R3

R3

Ci= iRiCi= iRi

C

C

4

4

R4

R4





Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit

Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit

0

1K

VCCDUT

L

L

Rg

80 V

DUT VCC

+-

DC

4X

DUT

VCC

RSH

L

Rg

VCCDUT /DRIVER

diode clamp /DUT

-5V

Rg

VCCDUT

R = VCC

ICM

G force

C sense

100K

DUT0.0075µF

D1 22K

E force

C force

E sense





Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4

Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4

Fig. WF4 - Typ. S.C. Waveform

@ TJ = 150°C using Fig. CT.3

Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4

-10

0

10

20

30

40

50

60

-100

0

100

200

300

400

500

600

-0.2 0 0.2 0.4 0.6 0.8I C

E(A

)

VC

E(V

)

time(µs)

90% ICE

10% VCE

10% ICE

Eoff Loss

tf

-10

0

10

20

30

40

50

60

-100

0

100

200

300

400

500

600

-0.2 0 0.2 0.4 0.6 0.8

I CE

(A)

VC

E(V

)

time (µs)

TEST CURRENT

90% ICE

10% VCE

10%ICE

tr

Eon Loss

-20

-15

-10

-5

0

5

10

15

-0.20 0.00 0.20 0.40 0.60

I F(A

)

time (µS)

PeakIRR

tRR

QRR

-50

0

50

100

150

200

250

-100

0

100

200

300

400

500

-10.0 -7.5 -5.0 -2.5 0.0 2.5 5.0

Vce

(V

)

Time (uS)

VCE

ICE





TO-247AC Package Outline Dimensions are shown in millimeters (inches)

YEAR 1 = 2001

DATE CODE

PART NUMBERINTERNATIONAL

LOGORECTIFIER

ASSEMBLY

56 57

IRFPE30

135H

LINE Hindicates "Lead-Free" WEEK 35LOT CODE

IN THE ASSEMBLY LINE "H"

ASSEMBLED ON WW 35, 2001

Notes: This part marking information applies to devices produced after 02/26/2001

Note: "P" in assembly line position

EXAMPLE:WITH ASSEMBLY THIS IS AN IRFPE30

LOT CODE 5657

TO-247AC Part Marking Information

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

TO-247AC package is not recommended for Surface Mount Application.





TO-247AD Package Outline Dimensions are shown in millimeters (inches)

TO-247AD Part Marking Information

A S S E M B L Y Y E A R 0 = 2 0 0 0

A S S E M B L E D O N W W 3 5 , 2 0 0 0

IN T H E A S S E M B L Y L IN E "H "

E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E

L O T C O D E 5 6 5 7W IT H A S S E M B L Y P A R T N U M B E R

D A T E C O D E

IN T E R N A T IO N A LR E C T IF IE R

L O G O 0 3 5 H

5 6 5 7

W E E K 3 5

L IN E H

L O T C O D EN o te : "P " in a s s e m b ly l in e p o s it io n

in d ic a te s "L e a d - F re e "

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

TO-247AD package is not recommended for Surface Mount Application.





IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/

Qualification Information†

Qualification Level Industrial

(per JEDEC JESD47F)††

TO-247AC N/A

TO-247AD

RoHS Compliant Yes

Moisture Sensitivity Level

† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/

†† Applicable version of JEDEC standard at the time of product release.

Revision History Date Comments

Added IFM Diode Maximum Forward Current = 140A with the note on page 1.

Removed note from switching losses test condition on page 2. 11/14/2014



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Documents

IRGP6650D EPbF Product Datasheet · IRGP6650DPbF IRGP6650D-EPbF 1 © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014