irfs3207zpbf

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Benefits

l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche SOAl Enhanced body diode dV/dt and dI/dt

Capability

www.irf.com 1

IRFB3207ZPbFIRFS3207ZPbF

IRFSL3207ZPbFApplicationsl High Efficiency Synchronous Rectification in

SMPSl Uninterruptible Power Supplyl High Speed Power Switchingl Hard Switched and High Frequency Circuits

HEXFETPower MOSFET

S

D

G

G D S

Gate Drain Source

TO-220ABIRFB3207ZPbF

D

S

DG

DD

SG

D2Pak

IRFS3207ZPbFTO-262

IRFSL3207ZPbF

SDG

VDSS 75V

RDS(on) typ. 3.3m:

max. 4.1m:

ID (Silicon Limited) 170Ac

ID (Package Limited) 120A

Absolute Maximum RatingsSymbol Parameter Units

ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited)

ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) A

ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Wire Bond Limited)IDM Pulsed Drain Current d

PD @TC = 25C Maximum Power Dissipation W

Linear Derating Factor W/C

VGS Gate-to-Source Voltage V

dv/dt Peak Diode Recovery f V/ns

TJ Operating Junction and C

TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

Avalanche CharacteristicsEAS (Thermally limited) Single Pulse Avalanche Energye mJ

IAR Avalanche Currentd A

EAR Repetitive Avalanche Energy g mJ

Thermal Resistance

Symbol Parameter Typ. Max. Units

RJC Junction-to-Case k 0.50

RCS Case-to-Sink, Flat Greased Surface , TO-220 0.50 C/W

RJA Junction-to-Ambient, TO-220 k 62

RJA Junction-to-Ambient (PCB Mount) , D2Pakjk 40

170

See Fig. 14, 15, 22a, 22b

300

16

-55 to + 175

20

2.0

10lbxin (1.1Nxm)

300

Max.

170c

120c

670120

PD - 97213C

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Notes:

Calculated continuous current based on maximum allowable junction

temperature. Bond wire current limit is 120A. Note that current

limitations arising from heating of the device leads may occur with

some lead mounting arrangements.

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by TJmax, starting TJ = 25C, L = 0.033mHRG = 25, IAS = 102A, VGS =10V. Part not recommended for use

above this value.

S

D

G

ISD 75A, di/dt 1730A/s, VDD V(BR)DSS, TJ 175C.

Pulse width 400s; duty cycle 2%.Coss eff. (TR) is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-99

R is measured at TJ approximately 90C.

Static @ TJ = 25C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. UnitsV(BR)DSS Drain-to-Source Breakdown Voltage 75 V

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.091 V/C

RDS(on) Static Drain-to-Source On-Resistance 3.3 4.1 mVGS(th) Gate Threshold Voltage 2.0 4.0 V

RG(int) Internal Gate Resistance 0.80 IDSS Drain-to-Source Leakage Current 20 A

250

IGSS Gate-to-Source Forward Leakage 100 nA

Gate-to-Source Reverse Leakage -100

Dynamic @ TJ = 25C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

gfs Forward Transconductance 280 S

Qg Total Gate Charge 120 170 nC

Qgs Gate-to-Source Charge 27

Qgd Gate-to-Drain ("Miller") Charge 33

Qsync Total Gate Charge Sync. (Qg - Qgd) 87

td(on) Turn-On Delay Time 20 ns

tr Rise Time 68

td(off) Turn-Off Delay Time 55

tf Fall Time 68

Ciss Input Capacitance 6920 pF

Coss Output Capacitance 600

Crss Reverse Transfer Capacitance 270

Coss eff. (ER) Effective Output Capacitance (Energy Related)i 770

Coss eff. (TR) Effective Output Capacitance (Time Related)h 960

Diode CharacteristicsSymbol Parameter Min. Typ. Max. Units

IS Continuous Source Current 170c

A(Body Diode)

ISM Pulsed Source Current 670

(Body Diode)di

VSD Diode Forward Voltage 1.3 V

trr Reverse Recovery Time 36 54 ns TJ = 25C VR = 64V,

41 62 TJ = 125C IF = 75A

Qrr Reverse Recovery Charge 50 75 nC TJ = 25C di/dt = 100A/s g

67 100 TJ = 125C

IRRM Reverse Recovery Current 2.4 A TJ = 25C

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Conditions

VDS = 50V, ID = 75A

ID = 75A

VGS = 20V

VGS = -20V

MOSFET symbolshowing the

VDS = 38V

Conditions

VGS = 10V g

VGS = 0V

VDS = 50V

= 1.0MHz

VGS = 0V, VDS = 0V to 60V j

VGS = 0V, VDS = 0V to 60V h

TJ = 25C, IS = 75A, VGS = 0Vg

integral reverse

p-n junction diode.

ConditionsVGS = 0V, ID = 250A

Reference to 25C, ID = 5mAd

VGS = 10V, ID = 75A g

VDS = VGS, ID = 150A

VDS = 75V, VGS = 0V

VDS = 75V, VGS = 0V, TJ = 125C

ID = 75A

RG = 2.7

VGS = 10V g

VDD = 49V

ID = 75A, VDS =0V, VGS = 10V

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Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature

Fig 2. Typical Output Characteristics

Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

10

100

1000

ID,Drain-to-Sourc

eCurrent(A)

VGSTOP 15V

10V8.0V6.0V5.5V5.0V4.8V

BOTTOM 4.5V

60s PULSE WIDTHTj = 25C

4.5V

2 3 4 5 6 7

VGS, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

ID,Drain-to-SourceCurrent(A)

TJ = 25C

TJ = 175C

VDS = 25V

60s PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100120140160180

TJ , Junction Temperature (C)

0.5

1.0

1.5

2.0

2.5

RDS(on),Drain-to-SourceOnResistance

(Normalized)

ID = 75A

VGS = 10V

1 10 100


100

1000

10000

100000

C,Capacitance(pF)

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, C ds SHORTED

Crss = CgdCoss = Cds + Cgd

Coss

Crss

Ciss

0 20 40 60 80 100 120 140

QG, Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

VGS,Gate-to-Sourc

eVoltage(V)

VDS= 60V

VDS= 38V

VDS= 15V

ID= 75A

0.1 1 10 100


10

100

1000

ID,Drain-to-Sourc

eCurrent(A)

4.5V

60s PULSE WIDTHTj = 175C

VGSTOP 15V

10V8.0V6.0V5.5V5.0V4.8V

BOTTOM 4.5V

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Fig 8. Maximum Safe Operating Area

Fig 10. Drain-to-Source Breakdown Voltage

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 11. Typical COSS Stored Energy

Fig 9. Maximum Drain Current vs. Case Temperature

Fig 12. Maximum Avalanche Energy vs. DrainCurrent

0.0 0.5 1.0 1.5 2.0 2.5

VSD, Source-to-Drain Voltage (V)

0.1

1

10

100

1000

ISD,ReverseDra

inCurrent(A)

TJ = 25C

TJ = 175C

VGS = 0V

-60 -40 -20 0 20 40 60 80 100120140160180

TJ , Temperature ( C )

70

75

80

85

90

95

100

V(BR)D

SS,

Drain-to-SourceBreakdownVoltage(V)

Id = 5mA

-10 0 10 20 30 40 50 60 70 80


0.0

0.5

1.0

1.5

2.0

2.5

Energy(

J)

1 10 100


0.1

1

10

100

1000

10000

ID,Drain-to-SourceCurrent(A)

OPERATION IN THIS AREALIMITED BY RDS(on)

Tc = 25CTj = 175CSingle Pulse

100sec

1msec10msec

DC

25 50 75 100 125 150 175

TC , Case Temperature (C)

0

20

40

60

80

100

120

140

160

180

ID, DrainCurrent(A)

Limited By Package

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (C)

0

100

200

300

400

500

600

700

EAS,SinglePulseAvala

ncheEnergy(mJ) ID

TOP 17A

30A

BOTTOM102A

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Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 14. Typical Avalanche Current vs.Pulsewidth

Fig 15. Maximum Avalanche Energy vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 14, 15:(For further info, see AN-1005 at www.irf.com)1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a temperature far inexcess of Tjmax. This is validated for every part type.

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.3. Equation below based on circuit and waveforms shown in Figures 16a, 16b4. PD (ave) = Average power dissipation per single avalanche pulse.5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase

during avalanche).6. Iav = Allowable avalanche current.

7. T = Allowable rise in junction temperature, not to exceedTjmax (assumed as

25C in Figure 14, 15).tav = Average time in avalanche.D = Duty cycle in avalanche = tav f

ZthJC(D, tav) = Transient thermal resistance, see Figures 13)

PD (ave) = 1/2 ( 1.3BVIav) =DT/ ZthJC

Iav =2DT/ [1.3BVZth]

EAS (AR) = PD (ave)tav

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

ThermalRespon

se(Z

thJC

)

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE( THERMAL RESPONSE )

Notes:1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc

Ri (C/W) i (sec)

0.1049 0.000099

0.2469 0.001345

0.1484 0.008469

J

J

1

1

2

2

3

3

R1R1 R2

R2 R3R3

C

Ci= i/Ri

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (C)

0

20

40

60

80

100

120

140

160

180

200

EAR

,AvalancheEnergy(mJ)

TOP Single Pulse

BOTTOM 1.0% Duty Cycle

ID = 102A

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

0.1

1

10

100

1000

AvalancheCurrent(A)

0.05

Duty Cycle =Single Pulse

0.10

Allowed avalanche Current vs avalanchepulsewidth, tav, assuming j = 25C andTstart = 150C.

0.01

Allowed avalanche Current vs avalanchepulsewidth, tav, assuming Tj = 150C andTstart =25C (Single Pulse)

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Fig. 17 - Typical Recovery Current vs. dif/dtFig 16. Threshold Voltage vs. Temperature

Fig. 19 - Typical Stored Charge vs. dif/dtFig. 18 - Typical Recovery Current vs. dif/dt

Fig. 20 - Typical Stored Charge vs. dif/dt

-75 -50 -25 0 25 50 75 100 125 150 175 200

TJ , Temperature ( C )

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

VGS(th),G

atethres

holdVoltage(V)

ID = 150A

ID = 250A

ID = 1.0mA

ID = 1.0A

0 200 400 600 800 1000

diF/dt (A/s)

0

5

10

15

20

IRR(

A)

IF = 45A

VR = 64V

TJ = 25C

TJ = 125C

0 200 400 600 800 1000

diF/dt (A/s)

0

5

10

15

20

IRR(

A)

IF = 30A

VR = 64V

TJ = 25C

TJ = 125C

0 200 400 600 800 1000

diF/dt (A/s)

20

100

180

260

340

QRR(

A)

IF = 30A

VR = 64V

TJ = 25C

TJ = 125C

0 200 400 600 800 1000

diF/dt (A/s)

20

100

180

260

340

QRR(A

)

IF = 45A

VR = 64V

TJ = 25C

TJ = 125C

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Fig 22a. Switching Time Test Circuit Fig 22b. Switching Time Waveforms

VGS

VDS

90%

10%

td(on) td(off)tr tf

VGS

Pulse Width < 1sDuty Factor < 0.1%

VDD

VDS

LD

D.U.T

+

-

Fig 21b. Unclamped Inductive WaveformsFig 21a. Unclamped Inductive Test Circuit

tpV(BR)DSS

IAS

RG

IAS

0.01tp

D.U.T

LVDS

+-

VDD

DRIVER

15V

20VVGS

Fig 23a. Gate Charge Test Circuit Fig 23b. Gate Charge Waveform

Vds

Vgs

Id

Vgs(th)

Qgs1 Qgs2 Qgd Qgodr

Fig 20. Peak Diode Recovery dv/dt Test Circuit for N-ChannelHEXFETPower MOSFETs

1K

VCCDUT

0

L

Circuit Layout Considerations

Low Stray Inductance

Ground Plane

Low Leakage Inductance

Current Transformer

P.W.Period

di/dt

Diode Recoverydv/dt

Ripple 5%

Body Diode Forward Drop

Re-AppliedVoltage

Reverse

RecoveryCurrent

Body Diode ForwardCurrent

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =P.W.

Period

* VGS = 5V for Logic Level Devices

*

+

-

+

+

+-

-

-

RGVDD dv/dt controlled by RG

Driver same type as D.U.T.

ISD controlled by Duty Factor "D"

D.U.T. - Device Under Test

D.U.T

Inductor Current

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TO-220AB packages are not recommended for Surface Mount Application.

TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

@ Y 6 H Q G @ )

D I U C @ 6 T T @ H 7 G ` G D I @ 8

U C D T D T 6 I D S A

G P U 8 P 9 @ & ' (

6 T T @ H 7 G @ 9 P I X X ( ( ( &

Q 6 S U I V H 7 @ S

6 T T @ H 7 G `

G P U 8 P 9 @

9 6 U @ 8 P 9 @

` @ 6 S & 2 ( ( &

G D I @ 8

X @ @ F (

G P B P

S @ 8 U D A D @ S

D I U @ S I 6 U D P I 6 G

Note: "P" in assembly lineposition indicates "Lead-Free"

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D2Pak (TO-263AB) Part Marking Information

D2Pak (TO-263AB) Package OutlineDimensions are shown in millimeters (inches)

9 6 U @ 8 P 9 @

` @ 6 S 2 !

X @ @ F !

6 2 6 T T @ H 7 G ` T D U @ 8 P 9 @

S @ 8 U D A D @ S


Q 6 S U I V H 7 @ S

Q 2 9 @ T D B I 6 U @ T G @ 6 9 A S @ @

Q S P 9 V 8 U P Q U D P I 6 G

A $ " T

D I U C @ 6 T T @ H 7 G ` G D I @ G

6 T T @ H 7 G @ 9 P I X X ! !

U C D T D T 6 I D S A $ " T X D U C

G P U 8 P 9 @ ' ! #


G P B P

S @ 8 U D A D @ S

G P U 8 P 9 @

6 T T @ H 7 G `

` @ 6 S 2 !

Q 6 S U I V H 7 @ S

9 6 U @ 8 P 9 @

G D I @ G

X @ @ F !

25

A $ " T

G P B P

6 T T @ H 7 G `

G P U 8 P 9 @

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html

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TO-262 Part Marking Information

TO-262 Package OutlineDimensions are shown in millimeters (inches)

G P B P

S @ 8 U D A D @ S


G P U 8 P 9 @

6 T T @ H 7 G `

G P B P

S @ 8 U D A D @ S


9 6 U @ 8 P 9 @

X @ @ F (

` @ 6 S & 2 ( ( &

Q 6 S U I V H 7 @ S

6 2 6 T T @ H 7 G ` T D U @ 8 P 9 @

25

Q S P 9 V 8 U P Q U D P I 6 G

Q 2 9 @ T D B I 6 U @ T G @ 6 9 A S @ @

@ Y 6 H Q G @ ) U C D T D T 6 I D S G " " G

G P U 8 P 9 @ & ' (

6 T T @ H 7 G `

Q 6 S U I V H 7 @ S

9 6 U @ 8 P 9 @

X @ @ F (

G D I @ 8

G P U 8 P 9 @

` @ 6 S & 2 ( ( &

6 T T @ H 7 G @ 9 P I X X ( ( ( &

D I U C @ 6 T T @ H 7 G ` G D I @ 8


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Data and specifications subject to change without notice

This product has been designed and qualified for the Industrial market

Qualification Standards can be found on IRs Web site

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903Visit us at www.irf.com for sales contact information. 04/08

D2Pak (TO-263AB) Tape & Reel InformationDimensions are shown in millimeters (inches)

3

4

4

TRR

FEED DIRECTION

1.85 (.073)1.65 (.065)

1.60 (.063)1.50 (.059)

4.10 (.161)3.90 (.153)

TRL

FEED DIRECTION

10.90 (.429)10.70 (.421)

16.10 (.634)15.90 (.626)

1.75 (.069)1.25 (.049)

11.60 (.457)11.40 (.449)

15.42 (.609)15.22 (.601)

4.72 (.136)4.52 (.178)

24.30 (.957)23.90 (.941)

0.368 (.0145)0.342 (.0135)

1.60 (.063)1.50 (.059)

13.50 (.532)

12.80 (.504)

330.00(14.173)MAX.

27.40 (1.079)

23.90 (.941)

60.00 (2.362)

MIN.

30.40 (1.197)MAX.

26.40 (1.039)24.40 (.961)

NOTES :1. COMFORMS TO EIA-418.2. CONTROLLING DIMENSION: MILLIMETER.3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.


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