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STMicroelectronics Interconnect impact on circuit performances in Deep Sub-Micron technologies Cristiano Forzan Central R&D – NVM Design Platform Bologna, June 2004

Interconnect impact on circuit performances in Deep Sub ...campi/Dida01/lezioni/cforzan.pdf · Interconnect impact on circuit performances in Deep Sub-Micron ... Ideal CMOS scaling

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STMicroelectronics

Interconnect impact on circuit performances in Deep Sub-Micron

technologies

Cristiano ForzanCentral R&D – NVM Design Platform

Bologna, June 2004

NVM Design Platform – Cristiano Forzan

Outline

CMOS device and interconnect scaling overview

Introduction to Static Timing Analysis

Interconnect resistance effects

References

NVM Design Platform – Cristiano Forzan

CMOS technology scaling overview

800 KTx800 KTx

1µm technology (1990)

1mm

0.13µm technology (2001)

1cm

NVM Design Platform – Cristiano Forzan

Ideal CMOS scaling

wiring

gate

drainsourcen+ n+

p-substratedoping NA

Vdd

L

W

tox

xd SVdd, Vth

1/SNA

SW, L, tox

Ideal Scaling Factor

ScaledParameter

NVM Design Platform – Cristiano Forzan

Interconnect reverse scaling

1/S1/SCurrent density1/S31RC delay

11Capacitance1/S21/S2Resistance

1/sqrt(S)SWireLengthSSILD ThicknessSSWire ThicknessSSLinewidth & Spacing

Global WiringLocal Wiring

NVM Design Platform – Cristiano Forzan

DSM scaling impact on delay

0.1

10

100

Rel

ativ

e D

elay

Process Technology Node [nm]180 130 100 70 50 35

Global NetLocal NetGate

(from ITRS 99)

Gate delay scalesLocal interconnect

delay scalesGlobal interconnect

delay dominates– Global interconnects

do not scale with feature sizes

NVM Design Platform – Cristiano Forzan

Quasi-ideal interconnect scaling

0.5 µm technology 0.25 µm technology

ideal quasi-ideal

Keeping wire resistance low– Increase the wire aspect ratio (AR = height / width)– Use copper instead of aluminium

NVM Design Platform – Cristiano Forzan

Interconnect capacitances

Substrate

Metal 1

Metal 2

CFRINGE CAREA

CCROSSOVER

CCOUPLING

NVM Design Platform – Cristiano Forzan

Interconnect capacitance trends

0

1

2

3

4

0.050.10.150.20.250.30.350

20

40

60

80

100 Aspect Ratio Pitch (um)Cc/Ctotal (%)

Technology Generation (µm)C

coup

ling

/ Cto

tal(

%)

Asp

ect R

atio

, P

itch

(µm

)Interconnect average length and routing density increase

Wire aspect ratio increases

Coupling capacitance dominates over ground capacitance

Interconnect capacitance dominates gate capacitance

NVM Design Platform – Cristiano Forzan

Traditional top-down design flowRTL description

Any top-down flow requires some predictive capabilities

Traditional top-down flows are effective when performances can be predicted with the wireload model

Logic Synthesis

Placement

Routing

Polygon implementation

NVM Design Platform – Cristiano Forzan

Interconnect impact on design flowRTL description

Polygon implementation

Logic Synthesis

Placement

Routing

The evolutionary response to the DSM problem has been a stronger integrationbetween the synthesis and the place&route process

This is what Physical Synthesis does today

Revolutionary breakthrough?

NVM Design Platform – Cristiano Forzan

Outline

CMOS device and interconnect scaling overview

Introduction to Static Timing Analysis– Timing verification– Delay calculation– Constraints

Interconnect resistance effects

References

NVM Design Platform – Cristiano Forzan

Dynamic Timing Simulation

Advantages

– Can check asynchronous interfaces

– No need to specify false and multicycle paths, clock model, etc

– Can be very accurate (SPICE)

Disadvantages

– Analysis quality depends on stimulus vectors

– Non-exhaustive – virtually impossible to check every path

– Long run times

NVM Design Platform – Cristiano Forzan

Static Timing Simulation

Advantages

– Fast – design is analyzed in one pass, for one clock cycle

– Exhaustive – checks all topological paths in design

– Does not require verification environment

Disadvantages

– Less accurate– Must define timing

requirements / exceptions– Difficulty handling

asynchronous designs, false paths

NVM Design Platform – Cristiano Forzan

Principles of Static Timing Verification

Netlist is represented as DAG – Directed Acyclic GraphDelay values associated with nodes (Cells) and links (Nets)Total path delay is the sum of Path delay values

2

3

24

1

11

11

In

Out11

NVM Design Platform – Cristiano Forzan

Path-based STA

Timing information is associated with topological paths– First, extract all possible topological paths– Next, for each path calculates its delay and compare it

with endpoint (required) value

Path-based:2+2+3 = 7 (OK)2+3+1+3 = 9 (OK)2+3+3+2 = 10 (OK)5+1+1+3 = 10 (OK)5+1+3+2 = 11 (Problem!)5+1+2 = 8 (OK)

31

31

21

32

AT=2

AT=5

RAT=10

NVM Design Platform – Cristiano Forzan

Timing Paths TypesFour types of Timing Paths

Input to Register (Synchronous)Register to Register (Synchronous)Register to Output (Synchronous)Input to Output (Asynchronous)

Each path has:StartPoint (Input port or FF output)EndPoint (Output port or FF input)Calculated value for path delay

In Out

In Out

NVM Design Platform – Cristiano Forzan

Outline

CMOS device and interconnect scaling overview

Introduction to Static Timing Analysis– Timing verification– Delay calculation– Constraints

Interconnect resistance effects

References

NVM Design Platform – Cristiano Forzan

Path delay calculation

The actual path delay is the sum of the Net and the Cell delays along the timing path– Net Delay – total time for charging/discharging all the

parasitics of a given net. It is a function of:Net capacitanceNet resistance

– Cell Delay – delay arc between corresponding input and output ports of the cell. It is a function of:

Input transition time (Slew)Total output load Process parameters (Temperature, Power supply)

NVM Design Platform – Cristiano Forzan

Net Delay Calculation (PreLayout)

Wire Load Model– Net length is a function of net fanout and chip area– For a given area, averages of R and C are estimated

for different fanouts– Net delay is calculated simply as R * C

0.0463

0.0302

0.0151

0.0203

0.0162

0.0121

Resistance as a function of fanout :

Capacitance as a function of fanout : For fanout = 3

Net delay = 0.046 * 0.020

NVM Design Platform – Cristiano Forzan

Cell Delay Calculation

Temperature,Power Level,Process

Cell delay is a function of– Input Transition Time (calculated by previous gate)– Total Output Capacitance (Net cap + sum of attached

Pin Caps)– Operating Conditions

NVM Design Platform – Cristiano Forzan

Cell Delay and Slew Calculation

Delay is calculated using 2-Dimensional Nonlinear Delay Model. Main calculation part is interpolation between nearest table values:

Total Cload (fF)

1310850.1

764.530

0.50.40.30.2

InputTransition

(ns)

A similar model is used for the Cell Slew calculationAfter calculation, delay is scaled by the operating conditions:

– Final_delay = Table_delay * Kvoltage * Ktemp * Kprocess

NVM Design Platform – Cristiano Forzan

Types of Cell Timing ArcsCombinatorial Cells: from all inputs to output:

A

B

C

Y

Sequential Cells: from Clock Input to outputs (propagation delay) and from Clock Input to Data Input (setup, hold checks):

D

Clk

Qn

Q

NVM Design Platform – Cristiano Forzan

Outline

CMOS device and interconnect scaling overview

Introduction to Static Timing Analysis– Timing verification– Delay calculation– Constraints

Interconnect resistance effects

References

NVM Design Platform – Cristiano Forzan

Path Constraints Types

Main path constraints include:Setup time (Input-to-Reg and Reg-to-Reg paths)Hold time (Input-to-Reg and Reg-to-Reg paths)Input delay (Input-to-Reg and Input-to-Output paths)Output delay (Reg-to-Output and Input-to-Output paths)

In

In

Out

Out

Clk

NVM Design Platform – Cristiano Forzan

Setup and Hold Times

Setup: amount of time data must be stable at the data pin of FF before the clock capturing edgeHold: amount of time data must remain stable at the data pin of FF after the clock capturing edge

Clk

In D Hold Check refers to the sameclock edge:TD – TCLK > THold

Setup Check refers to the nextClock edge (add clock period) :(TCLK + TPeriod) – TD > TSetup

Hold Setup

Clk

D

NVM Design Platform – Cristiano Forzan

Other constraints: Design Rules Check

Design Rules are electrical checks performed on each gate. They are defined in the technology libraryChecking min and max limits for:

Net / Port capacitanceNet Transition timesNet fanout

Max capacitance example:

max_capacitanceattribute fromTechnology library

Total capacitiveload includes pin load and netcapacitance

NVM Design Platform – Cristiano Forzan

Outline

CMOS device and interconnect scaling overview

Introduction to Static Timing Analysis

Interconnect resistance effects

References

NVM Design Platform – Cristiano Forzan

Interconnect resistance impact

For DSM technologies (0.25µm and below) RC distributed effects become dominant

Many iterations and no guarantee to achieve timing closure

For technologies up to 0.35µmdelay estimation based on the wireload model can be accurate

Few iterations for timing closure

NVM Design Platform – Cristiano Forzan

Wire resistance impact on delay

A Z R

Tstage(A-R) = Tgate(A-Z) + Twire(Z-R)

f(TIN, CZ)

NVM Design Platform – Cristiano Forzan

Effective capacitance

A Z

Ceffective

Tp

Tp1

The propagation time across the gate decreases due to the shielding resistance effect

The effective capacitance concept is introduced

NVM Design Platform – Cristiano Forzan

Interconnect delay estimation

The driving cell can be represented by a Thevenin equivalent model

The output waveform can be obtained via convolution of the driving point voltage waveform with the transfer function HZR

SPICE: generally too much expensive

A Z R

NVM Design Platform – Cristiano Forzan

Elmore delay

τ

Vin

t R1 R2 R3 R4 R5

R6 R7

C1 C2 C3 C4 C5

C6 C7

Vin( ) dtthtTD ∫∞

=0

It is an upper bound on the delay of an RC tree response: T τ≥D

NVM Design Platform – Cristiano Forzan

Elmore delay calculation

+= 115 CRTD

++ 221 )( CRR+++ 3321 )( CRRR

++++ 44321 )( CRRRR

+++++ 554321 )( CRRRRR

+61CR

71CR

R1 R2 R3 R4 R5

R6 R7

C1 C2 C3 C4 C5

C6 C7

Vin

∑=

=N

kkikD CRT

i1

54321

6 7

Elmore delay can be calculated very efficiently– Linear time w.r.t the RC tree size

NVM Design Platform – Cristiano Forzan

Model order reduction

A C

BHAB(s)

HAC(s)

( ) mm

nn

sbsbsbsasasaasH

++++++++

=L

L2

21

2210

1

Linear, time-invariant circuitThe transient response is generally dominated by a small number of polesSet of dominant poles is obtained by using moment-matching techniques (AWE, PRIMA, Arnoldi …)

NVM Design Platform – Cristiano Forzan

Moment matching technique (I)The goal of model order reduction techniques is to obtain a set of qapproximate dominant poles efficiently:

( ) mqps

kps

kps

ksHq

q <<−

++−

+−

= ,2

2

1

1* L

( ) tpq

tptp qekekekth +++= L2121

*

The i-th moment of the function f(t) is defined as:

( ) ( )dttfti

m ii

i ∫∞−

=0!

1

112

21

1

1*+++ +++= i

q

qiii

pk

pk

pkm L

NVM Design Platform – Cristiano Forzan

Moment matching technique (II)

The moments of H*(S) are forced to match the actual circuit moments:

1222

22

1

1 mpk

pk

pk

q

q =+++ L

02

2

1

1 mpk

pk

pk

q

q =+++ L

12222

22

1

1−=+++ qq

q

qqq m

pk

pk

pk

L

NVM Design Platform – Cristiano Forzan

Moment matching technique (III)Once the reduced order model is obtained, the output waveform iscalculated via convolution with the input signal.

– Example: saturated ramp

( ) ( ))(1 0)(

12

01

0 ttpepr

ttVtv k

ttpq

k k

kDDZ

k −−−−

= −

=∑

10 ttt ≤≤For time interval

t0 t1

VDD

A H*(s)Z

1tt ≥For time interval

( ) ( ))( 01)()(

12

01

10 ttpeepr

ttVtv k

ttpttpq

k k

kDDZ

kk −−−−

= −−

=∑

NVM Design Platform – Cristiano Forzan

Asymptotic Waveform Evaluation

A linear time-invariant network can be represented by the state equation:

BuAxx +=&

In the frequency domain:

( ) ( ) ( )sBUsAXxssX +=− )0(

The network transfer function is expressed by:

( ) ( )( ) ( ) BAsIsUsXsH 1−−==

NVM Design Platform – Cristiano Forzan

Asymptotic Waveform Evaluation (II)The transfer function is the Laplace transform of the impulse response:

( ) ∫∞

−=0

)( dtthesH st

The coefficients of the MacLaurin series expansion are the moments of the impulse response

( ) ( )∫ ∑∑∞ ∞

=

=

=−

=0 00

)(!1

kk

kk

k

kk msdttht

kssH

From the previous representation:( ) BsAsAIABAsIsH )()( 22111 L+++−=−= −−−−

NVM Design Platform – Cristiano Forzan

Moment determination

The moments are computed recursively

BAm 10

−=

012

1 mABAm −− ==

11)1(

−−+− == q

qq mABAm

State matrix is inverted only once

NVM Design Platform – Cristiano Forzan

Moment computation for RC treesNodal Analysis instead of State Analysis

– Based on KCL and KVL– It is not a general methodology but it is easier than State Equation

Nodal Analysis formulation:

BuCGvCv 11 −− +=&

u is a unit step input voltageC is the diagonal capacitance matrixG is the conductance matrix

NVM Design Platform – Cristiano Forzan

Nodal AnalysisFirst moments generation

Replace input drivers with their final valuePerform dc analysisMoments are the voltages across the capacitors R1 R2

R3

u(t)

L1

L3

L2

C3 C4

C1 C2Successive momentsSet input drivers to zeroReplace each capacitor with a current source I=mk-1C (V= mk-1L)Perform dc analysisMoments are the voltagesacross the current sources

mL1L1

mL3L3

mL2L2

mC3C3

mC1C1 mC2C2

mC4C4

NVM Design Platform – Cristiano Forzan

Outline

CMOS device and interconnect scaling overview

Introduction to Static Timing Analysis

Interconnect resistance effects

References

NVM Design Platform – Cristiano Forzan

References (I)H.B. Bakoglu “Circuits, Interconnects and Packaging for VLSI”, Addison-Wesley, 1990.N. Weste, K. Eshraghian “Principles of CMOS VLSI Design”, Addison-Wesley, 1993.

D. Sylvester, C. Hu “Analytical Modeling and Characterization of Deep-Submicrometer Interconnect” Proc IEEE, Vol 89 No 5 May 2001D. Sylvester, K. Keutzer “Getting to the Bottom of Deep Submicron” Proc ICCAD, 1998A. Vittal, M. Marek-Sadowska “Crosstalk reduction for VLSI”, IEEE Trans. on CAD, 1997.F. Dartu, L.T. Pileggi “Calculating worst-case gate delays due to dominant capacitance coupling” Proc. DAC 1997.W.C. Elmore “The transient analysis of damped linear networks with particularregard to wideband amplifiers”, J. Appl. Phys, Vol 19 No 1 1948

NVM Design Platform – Cristiano Forzan

References (II)

L. Pillage, R. Rohrer “Asymptotic Waveform Evaluation for timing analysis”, IEEE Trans. on CAD 1990A. Odabasioglu, M. Celik, L. T. Pileggi “PRIMA: Passive Reduced-Order Interconnect Macromodeling Algorithm”, 34th DAC 1997K. L. Shepard, Z. Tian “Return-Limited Inductances: A Practical Approach to On-Chip Inductances Extraction”, IEEE Trans. on CAD Vol 19 No 4 2000.Y. I. Ismail, E. G. Friedman, J. L. Neves “Figures of Merit to Characterize the Importance of On-Chip Inductance”, IEEE Trans. on VLSI Systems Vol 7 No 4 1999

NVM Design Platform – Cristiano Forzan

Our works on this field (I)

C. Forzan, B. Franzini and C. Guardiani “Accurate and Efficient Macromodel of Submicron Digital Standard Cells”, DAC 1997

D. Pandini, C. Guardiani, P. Gubian “A Moment Matching BasedMethodology for Crosstalk Analysis”, ASIC 1997

D. Pandini, P. Scandolara, C. Guardiani “Network Reduction for Crosstalk Analysis in Deep Submicron Technologies”, TAU 1997

D. Pandini, P. Scandolara, C. Guardiani “Reduced order macromodel of coupled interconnects for timing and functional verification of sub half-micron IC designs”, Asia and Pacific DAC 1997

NVM Design Platform – Cristiano Forzan

Our works on this field (II)

B. Franzini, C. Forzan, D. Pandini, Y. Liu and C. Guardiani “NonlinearMacromodels of Large Coupled Interconnect Networks”, CICC 1998

C. Guardiani, C. Forzan, B. Franzini, D. Pandini “Modeling the Effectof Wire Resistance in Deep Submicron Coupled Interconnects forAccurate Crosstalk Based Net Sorting”, PATMOS 1998

B. Franzini, C. Forzan, D. Pandini, P. Scandolara, A. Dal Fabbro“Crosstalk Aware Static Timing Analysis: a Two Step Approach”, ISQED 2000

B. Franzini, C. Forzan “Crosstalk Aware Static Timing Analysis Environment”, ESNUG 2001