Industry-Standard Dual Operational Amplifiers · 3 lm158, lm158a, lm258, lm258a lm358, lm358a, lm358b, lm358ba, lm2904, lm2904b, lm2904ba, lm2904v slos068x –june 1976–revised

Industry-Standard Dual Operational Amplifiers

1 Features• Wide supply range of 3 V to 36 V (B version)• Quiescent current: 300 µA per amplifier (B version,

typical)• Unity-gain bandwidth of 1.2 MHz (B version)• Common-mode input voltage range includes

ground, enabling direct sensing near ground• Low input offset voltage of 3 mV at 25°C (A and B

versions, maximum)• Internal RF and EMI filter (B version)• On products compliant to MIL-PRF-38535, all

parameters are tested unless otherwise noted. Onall other products, production processing does notnecessarily include testing of all parameters.

2 Applications• Merchant network and server power supply units• Multi-function printers• Power supplies and mobile chargers• Motor control: AC induction, brushed DC,

brushless DC, high-voltage, low-voltage,permanent magnet, and stepper motor

• Desktop PC and motherboard• Indoor and outdoor air conditioners• Washers, dryers, and refrigerators• AC inverters, string inverters, central inverters, and

voltage frequency drives• Uninterruptible power supplies• Programmable logic controllers• Electronic point-of-sale systems

RG RF

R1

C1

VIN

VOUT

= 1 +V

VOUT

IN

R

RF

G

1

1 + sR C1 1( (( (

1

2pR C1 1f =-3 dB

Single-Pole, Low-Pass Filter

3 DescriptionThe LM358B and LM2904B devices are the next-generation versions of the industry-standardoperational amplifiers (op amps) LM358 and LM2904,which include two high-voltage (36-V) op amps.These devices provide outstanding value for cost-sensitive applications, with features including lowoffset (300 µV, typical), common-mode input range toground, and high differential input voltage capability.

The LM358B and LM2904B op amps simplify circuitdesign with enhanced features such as unity-gainstability, lower offset voltage of 3 mV (maximum atroom temperature), and lower quiescent current of300 µA per amplifier (typical). High ESD (2 kV, HBM)and integrated EMI and RF filters enable the LM358Band LM2904B devices to be used in the most rugged,environmentally challenging applications.

The LM358B and LM2904B amplifiers are available inmicro-sized packaging, such as the SOT23-8 , as wellas industry standard packages, including SOIC,TSSOP, and VSSOP.

Device InformationPART NUMBER(1) PACKAGE BODY SIZE (NOM)

LM358B, LM2904B, LM358,LM358A, LM2904,LM2904V, LM258, LM258A

SOIC (8) 4.90 mm × 3.90 mm

LM358B, LM2904B, LM358,LM358A, LM2904,LM2490V

TSSOP (8) 3.00 mm × 4.40 mm

LM358B, LM2904B, LM358,LM358A, LM2904,LM2904V, LM258, LM258A

VSSOP (8) 3.00 mm × 3.00 mm

LM358B(2), LM2904B(2) SOT-23 (8) 2.90 mm × 1.60 mm

LM358, LM2904 SO (8) 5.20 mm × 5.30 mm

LM358, LM2904, LM358A,LM258, LM258A PDIP (8) 9.81 mm × 6.35 mm

LM158, LM158A CDIP (8) 9.60 mm × 6.67 mm

LM158, LM158A LCCC (20) 8.89 mm × 8.89 mm

(1) For all available packages, see the orderable addendum atthe end of the data sheet.

(2) Package is for preview only.

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LM158, LM158A, LM258, LM258ALM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V

SLOS068Y – JUNE 1976 – REVISED FEBRUARY 2021

Copyright © 2021 Texas Instruments Incorporated Submit Document Feedback 1

Product Folder Links: LM158 LM158A LM258 LM258A LM358 LM358A LM358B LM358BA LM2904 LM2904BLM2904BA LM2904V



An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,intellectual property matters and other important disclaimers. UNLESS OTHERWISE NOTED, this document contains PRODUCTIONDATA.

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Table of Contents1 Features............................................................................12 Applications..................................................................... 13 Description.......................................................................14 Revision History.............................................................. 25 Device Comparison Table...............................................46 Pin Configuration and Functions...................................57 Specifications.................................................................. 6

7.1 Absolute Maximum Ratings........................................ 67.2 ESD Ratings............................................................... 67.3 Recommended Operating Conditions.........................77.4 Thermal Information....................................................77.5 Electrical Characteristics: LM358B and LM358BA..... 87.6 Electrical Characteristics: LM2904B and

LM2904BA...................................................................107.7 Electrical Characteristics: LM358, LM358A.............. 127.8 Electrical Characteristics: LM2904, LM2904V.......... 137.9 Electrical Characteristics: LM158, LM158A.............. 147.10 Electrical Characteristics: LM258, LM258A............ 167.11 Typical Characteristics: LM358B and LM2904B..... 177.12 Typical Characteristics: LM158, LM158A,

LM258, LM258A, LM358, LM358A, LM2904, andLM2904V..................................................................... 24

8 Parameter Measurement Information.......................... 26

9 Detailed Description......................................................279.1 Overview................................................................... 279.2 Functional Block Diagram: LM358B, LM358BA,

LM2904B, LM2904BA................................................. 279.3 Feature Description...................................................289.4 Device Functional Modes..........................................28

10 Application and Implementation................................ 2910.1 Application Information........................................... 2910.2 Typical Application.................................................. 29

11 Power Supply Recommendations..............................3012 Layout...........................................................................30

12.1 Layout Guidelines................................................... 3012.2 Layout Examples.................................................... 31

13 Device and Documentation Support..........................3213.1 Related Links.......................................................... 3213.2 Receiving Notification of Documentation Updates..3213.3 Support Resources................................................. 3213.4 Trademarks.............................................................3213.5 Electrostatic Discharge Caution..............................3213.6 Glossary..................................................................32

14 Mechanical, Packaging, and OrderableInformation.................................................................... 33

4 Revision HistoryNOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision X (June 2020) to Revision Y (February 2021) Page• Updated the numbering format for tables, figures, and cross-references throughout the document..................1• Added SOT23-8 (DDF) package information throughout data sheet..................................................................1• Deleted preview tag from LM358B and LM2904B VSSOP (8) package in Device Information table................. 1• Added SOT23-8 (DDF) package information to Device Comparison Table .......................................................4• Added SOT23-8 (DDF) package information to the Pin Configuration and Functions section........................... 5• Added DDF (SOT-23) package to the Thermal Information table.......................................................................7

Changes from Revision W (October 2019) to Revision X (June 2020) Page• Added application links to Applications section.................................................................................................. 1• Deleted preview tag from LM358B and LM2904B TSSOP (8) package in Device Information table ................ 1

Changes from Revision V (September 2018) to Revision W (October 2019) Page• Added specification in the Device Comparison Table ........................................................................................4• Changed CDM ESD rating for LM358B and LM2904B in ESD Ratings ............................................................ 6• Changed VS to V+ in Recommended Operating Conditions ..............................................................................7• Changed Thermal Information for the LM158FK and LM158JG devices........................................................... 7• Added Typical Characteristics section for the LM358B and LM2490B op amps.............................................. 17• Added test circuit for THD+N and small-signal step response, G = –1 in the Parameter Measurement

Information section........................................................................................................................................... 26• Changed the Functional Block Diagram .......................................................................................................... 27

LM158, LM158A, LM258, LM258ALM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904VSLOS068Y – JUNE 1976 – REVISED FEBRUARY 2021 www.ti.com

2 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated


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• Deleted preview designator from LM358B and LM2904B in the Related Links section................................... 32

Changes from Revision U (January 2017) to Revision V (September 2018) Page• Changed the data sheet title ..............................................................................................................................1• Changed first four items in the Features section ............................................................................................... 1• Changed the first item in the Applications section and added four new items ...................................................1• Changed voltage values in the first paragraph of the Description section..........................................................1• Changed text in the second paragraph of the Description section..................................................................... 1• Added devices LM358B and LM2904B to data sheet.........................................................................................1• Changed the first three rows of the Device Information table and added a a cross-referenced note for

PREVIEW-status devices................................................................................................................................... 1• Added Device Comparison table ....................................................................................................................... 4• Added a table note to the Pin Functions table ................................................................................................... 5• Changed "free-air temperature" to "ambient temperature" in the Absolute Maximum Ratings condition

statement............................................................................................................................................................ 6• Changed all entries in the Absolute Maximum Ratings table except TJ and Tstg .............................................. 6• Deleted lead temperature and case temperature from Absolute Maximum Ratings ......................................... 6• Changed device listings and their voltage values in the ESD Ratings table ......................................................6• Changed "free-air temperature" to "ambient temperature" in the Recommended Operating Conditions

condition statement ............................................................................................................................................7• Changed table entries for all parameters in the Recommended Operating Conditions table.............................7• Added rows to the Thermal Information table, and a table note regarding device-package combinations ....... 7• Deleted the Operating Conditions table............................................................................................................16• Added a condition statement to the Typical Characteristics section.................................................................24• Changed specific voltages to a Recommended Operating Conditions reference............................................ 27• Changed unity-gain bandwidth from 0.7 MHz for all devices to 1.2 MHz for B-version devices.......................28• Changed slew rate from.3 V/µs for all devices to o.5 V/µs for B-version devices............................................ 28• Changed the Section 9.3.3 section in multiple places throughout.................................................................... 28• Changed VCC to VS in the Section 10.1 section ...............................................................................................29• Subscripted the suffixes fro RI and RF .............................................................................................................29• Changed Operational Amplifier Board Layout for Noninverting Configuration with an image that includes a

dual op amp...................................................................................................................................................... 31• Added Preview designation to the LM358B and LM2904B devices in Table 13-1 ...........................................32

Changes from Revision T (April 2015) to Revision U () Page• Changed data sheet title.....................................................................................................................................1

Changes from Revision S (January 2014) to Revision T (April 2015) Page• Added Applications section, ESD Ratings table, Feature Description section, Device Functional Modes,

Application and Implementation section, Power Supply Recommendations section, Layout section, Deviceand Documentation Support section, and Mechanical, Packaging, and Orderable Information section ........... 1

Changes from Revision R (July 2010) to Revision S (Jauary 2014) Page• Converted this data sheet from the QS format to DocZone using the PDF on the web..................................... 1• Deleted Ordering Information table.....................................................................................................................1• Updated Features to include Military Disclaimer................................................................................................ 1• Added Typical Characteristics section.............................................................................................................. 24

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5 Device Comparison TablePART NUMBER SUPPLYVOLTAGE

TEMPERATURERANGE

VOS (MAXIMUMAT 25°C)

IQ / CH (TYPICAL AT25°C)

INTEGRATED EMIFILTER PACKAGE

LM358B 3 V–36 V –40°C to 85°C 3 mV 300 µA Yes D, DDF, DGK, PW

LM2904B 3 V–36 V –40°C to 125°C 3 mV 300 µA Yes D, DDF, DGK, PW

LM358 3 V–32 V 0°C to 70°C 7 mV 350 µA No D, PW, DGK, P, PS

LM2904 3 V–26 V –40°C to 125°C 7 mV 350 µA No D, PW, DGK, P, PS

LM358A 3 V–32 V 0°C to 70°C 3 mV 350 µA No D, PW, DGK, P

LM2904V 3 V–32 V –40°C to 125°C 7 mV 350 µA No D, PW

LM158 3 V–32 V –55°C to 125°C 5 mV 350 µA No JG, FK

LM158A 3 V–32 V –55°C to 125°C 3 mV 350 µA No JG, FK

LM258 3 V–32 V –25°C to 85°C 5 mV 350 µA No D, DGK, P

LM258A 3 V–32 V –25°C to 85°C 3 mV 350 µA No D, DGK, P





6 Pin Configuration and Functions

1OUT1 8 V+

2IN1± 7 OUT2

3IN1+ 6 IN2±

4V± 5 IN2+

Not to scale

Figure 6-1. D, DDF, DGK, P, PS, PW, and JGPackage

8-Pin SOIC, SOT23-8, VSSOP, PDIP, SO, TSSOP,and CDIPTop View

4NC

5IN1±

6NC

7IN1+

8NC

9N

C

10

V±

11

NC

12

IN2

+

13

NC

14 NC

15 IN2±

16 NC

17 OUT2

18 NC

19

NC

20

V+

1N

C

2O

UT

1

3N

C

Not to scale

NC - No internal connectionFigure 6-2. FK Package

20-Pin LCCCTop View

Table 6-1. Pin FunctionsPIN

I/O DESCRIPTIONNAME LCCC(1) SOIC, SOT23-8, VSSOP, CDIP,PDIP, SO, TSSOP, CFP(1)

IN1– 5 2 I Negative input

IN1+ 7 3 I Positive input

IN2– 15 6 I Negative input

IN2+ 12 5 I Positive input

OUT1 2 1 O Output

OUT2 17 7 O Output

V– 10 4 — Negative (lowest) supply or ground (for single-supply operation)

NC 1, 3, 4, 6, 8, 9, 11,13, 14, 16, 18, 19 — — No internal connection

V+ 20 8 — Positive (highest) supply

(1) For a listing of which devices are available in what packages, see Section 5.

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7 Specifications7.1 Absolute Maximum Ratingsover operating ambient temperature range (unless otherwise noted)(1)

MIN MAX UNIT

Supply voltage, VS = ([V+] – [V–])

LM358B, LM358BA,LM2904B, LM2904BA ±20 or 40

VLM158, LM258, LM358,LM158A, LM258A, LM358A,LM2904V

±16 or 32

LM2904 ±13 or 26

Differential input voltage, VID (2)

LM358B, LM358BA,LM2904B, LM2904BA,LM158,LM258, LM358, LM158A,LM258A, LM358A, LM2904V

–32 32V

LM2904 –26 26

Input voltage, VI Either input

LM358B, LM358BA,LM2904B, LM2904BA –0.3 40

VLM158, LM258, LM358,LM158A, LM258A, LM358A,LM2904V

–0.3 32

LM2904 –0.3 26

Duration of output short circuit (one amplifier) to ground at (or below) TA = 25°C,VS ≤ 15 V(3)

Unlimited s

Operating ambient temperature, TA

LM158, LM158A –55 125

°C

LM258, LM258A –25 85

LM358B, LM358BA –40 85

LM358, LM358A 0 70

LM2904B, LM2904BA,LM2904, LM2904V –40 125

Operating virtual-junction temperature, TJ 150 °C

Storage temperature, Tstg –65 150 °C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratingsonly, and do not imply functional operation of the device at these or any other conditions beyond those indicated under RecommendedOperating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Differential voltages are at IN+, with respect to IN−.(3) Short circuits from outputs to VS can cause excessive heating and eventual destruction.

7.2 ESD RatingsVALUE UNIT

LM358B, LM358BA, LM2904B, AND LM2904BA

V(ESD) Electrostatic dischargeHuman-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000

VCharged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000

LM158, LM258, LM358, LM158, LM258A, LM358A, LM2904, AND LM2904V

V(ESD) Electrostatic dischargeHuman-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±500

VCharged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.





7.3 Recommended Operating Conditionsover operating ambient temperature range (unless otherwise noted)

MIN MAX UNIT

VS Supply voltage, VS= ([V+] – [V–])

LM358B, LM358BA, LM2904B,LM2904BA 3 36

VLM158, LM258, LM358, LM158A,LM258A, LM358A, LM2904V 3 30

LM2904 3 26

VCM Common-mode voltage V– V+ – 2 V

TA Operating ambient temperature

LM358B, LM358BA –40 85

°C

LM2904B, LM2904BA, LM2904,LM2904V –40 125

LM358, LM358A 0 70

LM258, LM258A –20 85

LM158, LM158A –55 125

7.4 Thermal Information

THERMAL METRIC(1)

LM258, LM258A, LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B,LM2904BA, LM2904V(2) LM158, LM158A

UNITD(SOIC)

DGK(VSSOP)

P(PDIP)

PS(SO)

PW(TSSOP)

DDF(SOT-23)

FK(LCCC)

JG(CDIP)

8 PINS 8 PINS 8 PINS 8 PINS 8 PINS 8PINS 20 PINS 8 PINS

RθJAJunction-to-ambientthermal resistance 124.7 181.4 80.9 116.9 171.7 TBD 84.0 112.4 °C/W

RθJC(top)Junction-to-case (top)thermal resistance 66.9 69.4 70.4 62.5 68.8 TBD 56.9 63.6 °C/W

RθJBJunction-to-board thermalresistance 67.9 102.9 57.4 68.6 99.2 TBD 57.5 100.3 °C/W

ψJTJunction-to-topcharacterizationparameter

19.2 11.8 40 21.9 11.5 TBD 51.7 35.7 °C/W

ψJBJunction-to-boardcharacterizationparameter

67.2 101.2 56.9 67.6 97.9 TBD 57.1 93.3 °C/W

RθJC(bot)Junction-to-case (bottom)thermal resistance — — — — — — 10.6 22.3 °C/W

(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.(2) For a listing of which devices are available in what packages, see Section 5.

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7.5 Electrical Characteristics: LM358B and LM358BAVS = (V+) – (V–) = 5 V – 36 V (±2.5 V – ±18 V), TA = 25°C, VCM = VOUT = VS / 2, RL = 10k connected to VS / 2(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

OFFSET VOLTAGE

VOS Input offset voltage

LM358B±0.3 ±3.0 mV

TA = –40°C to +85°C ±4 mV

LM358BA±2.0 mV

TA = –40°C to +85°C ±2.5 mV

dVOS/dT Input offset voltage drift TA = -40°C to +85°C(1) ±3.5 11 µV/°C

PSRR Power supply rejection ratio ±2 15 µV/V

Channel separation, dc f = 1 kHz to 20 kHz ±1 µV/V

INPUT VOLTAGE RANGE

VCM Common-mode voltage rangeVS = 3 V to 36 V (V–) (V+) – 1.5 V

VS = 5 V to 36 V TA = –40°C to +85°C (V–) (V+) – 2 V

CMRR Common-mode rejection ratio(V–) ≤ VCM ≤ (V+) – 1.5 V VS = 3 V to 36 V 20 100

µV/V(V–) ≤ VCM ≤ (V+) – 2.0 V VS = 5 V to 36 V TA = –40°C to +85°C 25 316

INPUT BIAS CURRENT

IB Input bias current±10 ±35 nA

TA = –40°C to +85°C(1) ±50 nA

IOS Input offset current0.5 4 nA

TA = –40°C to +85°C(1) 5 nA

dIOS/dT Input offset current drift TA = –40°C to +85°C 10 pA/℃

NOISE

En Input voltage noise f = 0.1 to 10 Hz 3 µVPP

en Input voltage noise density f = 1 kHz 40 nV/√/Hz

INPUT IMPEDANCE

ZID Differential 10 || 0.1 MΩ|| pF

ZIC Common-mode 4 || 1.5 GΩ|| pF

OPEN-LOOP GAIN

AOL Open-loop voltage gain VS = 15 V; VO = 1 V to 11 V; RL ≥ 10 kΩ, connected to (V–)70 140 V/mV

TA = –40°C to +85°C 35 V/mV

FREQUENCY RESPONSE

GBW Gain bandwidth product 1.2 MHz

SR Slew rate G = + 1 0.5 V/µs

Θm Phase margin G = + 1, RL = 10kΩ, CL = 20 pF 56 °

tOR Overload recovery time VIN × gain > VS 10 µs

ts Settling time To 0.1%, VS = 5 V, 2-V step , G = +1, CL = 100 pF 4 µs

THD+N Total harmonic distortion + noise G = + 1, f = 1 kHz, VO = 3.53 VRMS, VS = 36 V, RL = 100k, IOUT ≤ ±50 µA, BW = 80 kHz 0.001 %

OUTPUT

VO Voltage output swing from rail

Positive rail (V+)

IOUT = 50 µA 1.35 1.42 V

IOUT = 1 mA 1.4 1.48 V

IOUT = 5 mA(1) 1.5 1.61 V

Negative rail (V–)

IOUT = 50 µA 100 150 mV

IOUT = 1 mA 0.75 1 V

VS = 5 V, RL ≤ 10 kΩ connected to (V–) TA = –40°C to +85°C 5 20 mV

IO Output current

VS = 15 V; VO = V–;VID = 1 V

Source(1)-20 -30

mATA = –40°C to +85°C -10

VS = 15 V; VO = V+;VID = –1 V

Sink(1)10 20

TA = –40°C to +85°C 5

VID = –1 V; VO = (V–) + 200 mV 60 100 μA

ISC Short-circuit current VS = 20 V, (V+) = 10 V, (V–) = –10 V, VO = 0 V ±40 ±60 mA

CLOAD Capacitive load drive 100 pF

RO Open-loop output resistance f = 1 MHz, IO = 0 A 300 Ω





7.5 Electrical Characteristics: LM358B and LM358BA (continued)VS = (V+) – (V–) = 5 V – 36 V (±2.5 V – ±18 V), TA = 25°C, VCM = VOUT = VS / 2, RL = 10k connected to VS / 2(unless otherwise noted)


POWER SUPPLY

IQ Quiescent current per amplifier VS = 5 V; IO = 0 ATA = –40°C to +85°C

300 460 µA

IQ Quiescent current per amplifier VS = 36 V; IO = 0 A 800 µA

(1) Specified by characterization only.

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7.6 Electrical Characteristics: LM2904B and LM2904BAVS = (V+) – (V–) = 5 V – 36 V (±2.5 V – ±18 V), TA = 25°C, VCM = VOUT = VS / 2, RL = 10k connected to VS / 2(unless otherwise noted)


OFFSET VOLTAGE

VOS Input offset voltage

LM2904B±0.3 ±3.0 mV

TA = –40°C to +125°C ±4 mV

LM2904BA±2.0 mV

TA = –40°C to +125°C ±2.5 mV

dVOS/dT Input offset voltage drift TA = –40°C to +125°C(1) ±3.5 12 µV/°C

PSRR Power supply rejection ratio ±2 15 µV/V

Channel separation, dc f = 1 kHz to 20 kHz ±1 µV/V

INPUT VOLTAGE RANGE

VCM Common-mode voltage rangeVS = 3 V to 36 V (V–) (V+) – 1.5 V

VS = 5 V to 36 V TA = –40°C to +125°C (V–) (V+) – 2 V

CMRR Common-mode rejection ratio(V–) ≤ VCM ≤ (V+) – 1.5 V VS = 3 V to 36 V 20 100

µV/V(V–) ≤ VCM ≤ (V+) – 2.0 V VS = 5 V to 36 V TA = –40°C to +125°C 25 316

INPUT BIAS CURRENT

IB Input bias current±10 ±35 nA

TA = –40°C to +125°C(1) ±50 nA

IOS Input offset current0.5 4 nA

TA = –40°C to +125°C(1) 5 nA

dIOS/dT Input offset current drift TA = –40°C to +125°C 10 pA/℃

NOISE

En Input voltage noise f = 0.1 to 10 Hz 3 µVPP

en Input voltage noise density f = 1 kHz 40 nV/√/Hz

INPUT IMPEDANCE

ZID Differential 10 || 0.1 MΩ|| pF

ZIC Common-mode 4 || 1.5 GΩ|| pF

OPEN-LOOP GAIN

AOL Open-loop voltage gain VS = 15 V; VO = 1 V to 11 V; RL ≥ 10 kΩ, connected to (V–)70 140 V/mV

TA = –40°C to +125°C 35 V/mV

FREQUENCY RESPONSE


SR Slew rate G = + 1 0.5 V/µs

Θm Phase margin G = + 1, RL = 10kΩ, CL = 20 pF 56 °

tOR Overload recovery time VIN × gain > VS 10 µs

ts Settling time To 0.1%, VS = 5 V, 2-V Step , G = +1, CL = 100 pF 4 µs

THD+N Total harmonic distortion + noise G = + 1, f = 1 kHz, VO = 3.53 VRMS, VS = 36 V, RL = 100k, IOUT ≤ ±50 µA, BW = 80 kHz 0.001 %

OUTPUT

VO Voltage output swing from rail

Positive rail (V+)

IOUT = 50 µA 1.35 1.42 V

IOUT = 1 mA 1.4 1.48 V

IOUT = 5 mA(1) 1.5 1.61 V

Negative rail (V–)

IOUT = 50 µA 100 150 mV

IOUT = 1 mA 0.75 1 V

VS = 5 V, RL ≤ 10 kΩ connected to (V–) TA = –40°C to +125°C 5 20 mV

IO Output current

VS = 15 V; VO = V–; VID =1 V Source

(1)–20 –30

mATA = –40°C to +125°C –10

VS = 15 V; VO = V+; VID =–1 V Sink

(1)10 20

TA = –40°C to +125°C 5

VID = –1 V; VO = (V–) + 200 mV 60 100 μA

ISC Short-circuit current VS = 20 V, (V+) = 10 V, (V–) = –10 V, VO = 0 V ±40 ±60 mA

CLOAD Capacitive load drive 100 pF

RO Open-loop output resistance f = 1 MHz, IO = 0 A 300 Ω





7.6 Electrical Characteristics: LM2904B and LM2904BA (continued)VS = (V+) – (V–) = 5 V – 36 V (±2.5 V – ±18 V), TA = 25°C, VCM = VOUT = VS / 2, RL = 10k connected to VS / 2(unless otherwise noted)


POWER SUPPLY

IQ Quiescent current per amplifier VS = 5 V; IO = 0 ATA = –40°C to +125°C

300 460 µA

IQ Quiescent current per amplifier VS = 36 V; IO = 0 A 800 µA

(1) Specified by characterization only.

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7.7 Electrical Characteristics: LM358, LM358AFor VS = (V+) – (V–) = 5 V, TA = 25°C (unless otherwise noted)

PARAMETER TEST CONDITIONS(1) MIN TYP(2) MAX UNIT

OFFSET VOLTAGE

VOS Input offset voltageVS = 5 V to 30 V; VC M = 0 V; VO = 1.4V

LM3583 7

mVTA = 0°C to 70°C 9

LM358A 2 3

TA = 0°C to 70°C 5

dVOS/dT Input offset voltage driftLM358 TA = 0°C to 70°C 7

µV/°CLM358A TA = 0°C to 70°C 7 20

PSRR Input offset voltage vs powersupply (ΔVIO/ΔVS)VS = 5 V to 30 V 65 100 dB

VO1/ VO2 Channel separation f = 1 kHz to 20 kHz 120 dB

INPUT VOLTAGE RANGE

VCM Common-mode voltage range

VS = 5 V to 30 V LM358(V–) (V+) – 1.5

VVS = 30 V LM358A

VS = 5 V to 30 V LM358TA = 0°C to 70°C (V–) (V+) – 2

VS = 30 V LM358A

CMRR Common-mode rejection ratio VS = 5 V to 30 V; VCM = 0 V 65 80 dB

INPUT BIAS CURRENT

IB Input bias current VO = 1.4 V

LM358–20 –250

nATA = 0°C to 70°C –500

LM358A–15 –100

TA = 0°C to 70°C –200

IOS Input offset current VO = 1.4 V

LM3582 50

nATA = 0°C to 70°C 150

LM358A2 30

TA = 0°C to 70°C 75

dIOS/dT Input offset current drift10

pA/°CLM358A TA = 0°C to 70°C 300

NOISE

en Input voltage noise density f = 1 kHz 40 nV/√ Hz

OPEN-LOOP GAIN

AOL Open-loop voltage gain VS = 15 V; VO = 1 V to 11 V; RL ≥ 2 kΩ25 100

V/mVTA = 0°C to 70°C 15

FREQUENCY RESPONSE


SR Slew rate G = +1 0.3 V/µs

OUTPUT

VO Voltage output swing from railPositive rail

VS = 30 V; RL = 2 kΩ TA = 0°C to 70°C 4

VVS = 30 V; RL ≥ 10 kΩ 2 3

VS = 5 V; RL ≥ 2 kΩ 1.5

Negative rail VS = 5 V; RL ≤ 10 kΩ TA = 0°C to 70°C 5 20 mV

IO Output current

VS = 15 V; VO = 0 V; VID= 1 V Source

–20 –30

mA

LM358A –60

TA = 0°C to 70°C –10

VS = 15 V; VO = 15 V;VID = –1 V

Sink10 20

TA = 0°C to 70°C 5

VID = –1 V; VO = 200 mV 12 30 µA

ISC Short-circuit current VS = 10 V; VO = VS / 2 ±40 ±60 mA

POWER SUPPLY

IQ Quiescent current per amplifierVO = 2.5 V; IO = 0 A

TA = 0°C to 70°C350 600

µAVS = 30 V; VO = 15 V; IO = 0 A 500 1000

(1) All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified.Maximum VS for testing purposes is 30 V for LM358 and LM358A.

(2) All typical values are TA = 25°C.





7.8 Electrical Characteristics: LM2904, LM2904VFor VS = (V+) – (V–) = 5 V, TA = 25°C (unless otherwise noted)


OFFSET VOLTAGE

VOS Input offset voltageVS = 5 V to maximum; VC M = 0 V; VO =1.4 V

Non-A suffixdevices

3 7

mVTA = –40°C to 125°C 10

A-suffixdevices

1 2

TA = –40°C to 125°C 4

dVOS/dT Input offset voltage drift TA = –40°C to 125°C 7 µV/°C

PSRR Input offset voltage vs power supply(ΔVIO/ΔVS)VS = 5 V to 30 V 65 100 dB


INPUT VOLTAGE RANGE

VCM Common-mode voltage range VS = 5 V to maximum(V–) (V+) – 1.5

VTA = –40°C to 125°C (V–) (V+) – 2

CMRR Common-mode rejection ratio VS = 5 V to maximum; VCM = 0 V 65 80 dB

INPUT BIAS CURRENT

IB Input bias current VO = 1.4 V–20 –250

nATA = –40°C to 125°C –500


Non-V suffixdevice

2 50

nATA = –40°C to 125°C 300

V-suffixdevice

2 50

TA = –40°C to 125°C 150

dIOS/dT Input offset current drift TA = –40°C to 125°C 10 pA/°C

NOISE


OPEN-LOOP GAIN


V/mVTA = –40°C to 125°C 15

FREQUENCY RESPONSE



OUTPUT


RL ≥ 10 kΩ VS – 1.5

V

Non-V suffixdevice

VS = maximum; RL =2 kΩ

TA = –40°C to 125°C

4

VS = maximum; RL ≥10 kΩ 2 3

V-suffix device

VS = maximum; RL =2 kΩ 6

VS = maximum; RL ≥10 kΩ 4 5

Negative rail VS = 5 V; RL ≤ 10 kΩ TA = –40°C to 125°C 5 20 mV

IO Output current

VS = 15 V; VO = 0 V; VID = 1 V Source–20 –30

mATA = –40°C to 125°C –10

VS = 15 V; VO = 15 V; VID = –1 V Sink10 20

TA = –40°C to 125°C 5

VID = -1 V; VO = 200 mVNon-V suffix device 30

µAV-suffix device 12 40


POWER SUPPLY


TA = –40°C to 125°C350 600

µAVS = maximum; VO = maximum / 2; IO = 0 A 500 1000

(1) All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified.Maximum VS for testing purposes is 26 V for LM2904 and 32 V for LM2904V.


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OFFSET VOLTAGE

VOS Input offset voltage VS = 5 V to 30 V; VC M = 0 V; VO = 1.4 V

LM1583 5

mVTA = –55°C to 125°C 7

LM158A2

TA = –55°C to 125°C 4

dVOS/dT Input offset voltage driftLM158 TA = –55°C to 125°C 7

µV/°CLM158A TA = –55°C to 125°C 7 15(3)



INPUT VOLTAGE RANGE


VS = 5 V to 30 V LM158(V–) (V+) – 1.5

VVS = 30 V LM158A

VS = 5 V to 30 V LM158TA = –55°C to 125°C (V–) (V+) – 2

VS = 30 V LM158A


INPUT BIAS CURRENT


LM158–20 –150

nATA = –55°C to 125°C –300

LM158A–15 –50

TA = –55°C to 125°C –100


LM1582 30

nATA = –55°C to 125°C 100

LM158A2 10

TA = –55°C to 125°C 30


pA/°CLM158A TA = –55°C to 125°C 200

NOISE


OPEN-LOOP GAIN


V/mVTA = –55°C to 125°C 25

FREQUENCY RESPONSE



OUTPUT


VS = 30 V; RL = 2 kΩ TA = –55°C to 125°C 4

VVS = 30 V; RL ≥ 10 kΩ 2 3

VS = 5 V; RL ≥ 2 kΩ 1.5


IO Output current

VS = 15 V; VO = 0 V; VID = 1 V Source

–20 –30

mA

LM158A –60

TA = –55°C to 125°C –10

VS = 15 V; VO = 15 V; VID = –1V Sink

10 20

TA = –55°C to 125°C 5

VID = –1 V; VO = 200 mV 12 30 µA






7.9 Electrical Characteristics: LM158, LM158A (continued)For VS = (V+) – (V–) = 5 V, TA = 25°C (unless otherwise noted)


POWER SUPPLY


TA = –55°C to 125°C350 600

µAVS = 30 V; VO = 15 V; IO = 0 A 500 1000


(2) All typical values are TA = 25°C.(3) On products compliant to MIL-PRF-38535, this parameter is not production tested.

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OFFSET VOLTAGE

VOS Input offset voltage VS = 5 V to 30 V; VC M = 0 V; VO = 1.4 V

LM2583 5

mVTA = –25°C to 85°C 7

LM258A2 3

TA = –25°C to 85°C 4

dVOS/dT Input offset voltage driftLM258

TA = –25°C to 85°C7

µV/°CLM258A 7 15



INPUT VOLTAGE RANGE


VS = 5 V to 30 V LM258(V–) (V+) – 1.5

VVS = 30 V LM258A

VS = 5 V to 30 V LM258TA = –25°C to 85°C (V–) (V+) – 2

VS = 30 V LM258A


INPUT BIAS CURRENT


LM258–20 –150

nATA = –25°C to 85°C –300

LM258A–15 –80

TA = –25°C to 85°C –100


LM2582 30

nATA = –25°C to 85°C 100

LM258A2 15

TA = –25°C to 85°C 30


pA/°CLM258A TA = –25°C to 85°C 200

NOISE


OPEN-LOOP GAIN


V/mVTA = –25°C to 85°C 25

FREQUENCY RESPONSE



OUTPUT


VS = 30 V; RL = 2 kΩ TA = –25°C to 85°C 4

VVS = 30 V; RL ≥ 10 kΩ 2 3

VS = 5 V; RL ≥ 2 kΩ 1.5


IO Output current

VS = 15 V; VO = 0 V; VID = 1 V Source

–20 –30

mA

LM258A –60

TA = –25°C to 85°C –10

VS = 15 V; VO = 15 V; VID = –1V Sink

10 20

TA = –25°C to 85°C 5

VID = –1 V; VO = 200 mV 12 30 µA


POWER SUPPLY


TA = –25°C to 85°C350 600

µAVS = 30 V; VO = 15 V; IO = 0 A 500 1000







7.11 Typical Characteristics: LM358B and LM2904BThis typical characteristics section is applicable for LM358B and LM2904B. Typical characteristics data in this section wastaken with TA = 25°C, VS = 36 V (±18 V), VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2 (unless otherwise noted).

Offset Voltage (µV)

Am

plif

iers

(%

)

-1800 -1200 -600 0 600 1200 18000

2

4

6

8

10

12

14

16

18

20

DC11

Figure 7-1. Offset Voltage Production DistributionOffset Voltage Drift (µV/°C)

Am

plif

iers

(%

)

0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.750

3

6

9

12

15

18

21

24

27

30

DC12

Figure 7-2. Offset Voltage Drift Distribution

Temperature (°C)

Offse

t V

olta

ge

(µ

V)

-40 -20 0 20 40 60 80 100 120-750

-450

-150

150

450

750

DC10

Figure 7-3. Offset Voltage vs Temperature

Common-Mode Voltage (V)

Offse

t V

olta

ge

(µ

V)

-18 -12 -6 0 6 12 17-500

-300

-100

100

300

500

DC10

Figure 7-4. Offset Voltage vs Common-Mode Voltage

Frequency (Hz)

Open L

oop V

oltage G

ain

(dB

)

Pha

se (�)

-20 -10

-10 0

0 10

10 20

20 30

30 40

40 50

50 60

60 70

70 80

80 90

90 100

1k 10k 100k 1M

D012

Gain (dB)Phase (°)

Figure 7-5. Open-Loop Gain and Phase vs Frequency

Frequency (Hz)

Clo

sed L

opp V

oltage G

ain

(dB

)

-30

-20

-10

0

10

20

30

40

50

60

70

1k 10k 100k 1M

D017

G = 1G = 10G = 100G = 1000G = –1

Figure 7-6. Closed-Loop Gain vs Frequency

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7.11 Typical Characteristics: LM358B and LM2904B (continued)This typical characteristics section is applicable for LM358B and LM2904B. Typical characteristics data in this section wastaken with TA = 25°C, VS = 36 V (±18 V), VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2 (unless otherwise noted).


Input B

ias C

urr

ent (n

A)

-20 -15 -10 -5 0 5 10 15 20-15

-12.5

-10

-7.5

-5

DC3I

IB+IB–

Figure 7-7. Input Bias Current vs Common-Mode Voltage


Input O

ffset

Curr

ent

(pA

)

-20 -15 -10 -5 0 5 10 15 20-40

-20

0

20

40

60

80

100

120

DC3I

Figure 7-8. Input Offset Current vs Common-Mode Voltage

Temperature (°C)

Input B

ias C

urr

ent (n

A)

-40 -10 20 50 80 110 130-12

-11

-10

-9

-8

-7

-6

DCIB

IB+IB–

Figure 7-9. Input Bias Current vs Temperature

Temperature (°C)

Input O

ffset C

urr

ent (n

A)

-40 -10 20 50 80 110 130-0.03

-0.015

0

0.015

0.03

0.045

0.06

DCIO

Figure 7-10. Input Offset Current vs Temperature

Output Current (mA)

Outp

ut

Voltage (

V)

0 10 20 30 40 50

V+

(V+) – 3 V

(V+) – 6 V

(V+) – 9 V

(V+) – 12 V

DC13

–40�C25�C125�C

Figure 7-11. Output Voltage Swing vs Output Current (Sourcing)

Output Current (mA)

Outp

ut V

oltage (

V)

0 5 10 15 20 25 30 35 40V–

(V–) + 3 V

(V–) + 6 V

(V–) + 9 V

(V–) + 12 V

(V–) + 15 V

(V–) + 18 V

DC1-

–40�C25�C125�C

Figure 7-12. Output Voltage Swing vs Output Current (Sinking)






Frequency (Hz)

PS

RR

and C

MR

R (

dB

)

0

10

20

30

40

50

60

70

80

90

100

1k 10k 100k 1M

D001

PSRR+PSRR-CMRR

Figure 7-13. CMRR and PSRR vs FrequencyTemperature (°C)

Com

mon-M

ode R

eje

ction R

atio (

dB

)

-40 -10 20 50 80 110 13085

90

95

100

105

110

115

120

DC2_

VS = 36VVS = 5V

Figure 7-14. Common-Mode Rejection Ratio vsTemperature (dB)

Temperature (°C)

Pow

er

Supply

Reje

ction R

atio

(dB

)

-40 -20 0 20 40 60 80 100 120 140-123

-122

-121

-120

-119

-118

DC8_

VS = 5 V to 36 V

Figure 7-15. Power Supply Rejection Ratio vs Temperature (dB)

Time (s)

Voltage (

µV

)

0 1 2 3 4 5 6 7 8 9 10-2

-1.6

-1.2

-0.8

-0.4

0

0.4

0.8

1.2

1.6

D011

Figure 7-16. 0.1-Hz to 10-Hz Noise

Frequency (Hz)

Voltage N

ois

e S

pectr

al D

ensity (

nV

/H

z)

0

10

20

30

40

50

60

70

80

90

100

10 100 1k 10k 100k

D010

Figure 7-17. Input Voltage Noise Spectral Density vs Frequency

Frequency (Hz)

TH

D+

N (

dB

)

-112

-104

-96

-88

-80

-72

-64

-56

-48

-40

-32

100 1k 10k

D013

10 k�2 k�

G = 1, f = 1 kHz, BW = 80 kHz,VOUT = 10 VPP, RL connected to V–

Figure 7-18. THD+N Ratio vs Frequency, G = 1

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Frequency (Hz)

TH

D+

N (

dB

)

-104

-96

-88

-80

-72

-64

-56

-48

-40

-32

100 1k 10k

D014

10 k�2 k�

G = –1, f = 1 kHz, BW = 80 kHz,VOUT = 10 VPP, RL connected to V–

See Figure 8-3

Figure 7-19. THD+N Ratio vs Frequency, G = –1

Amplitude (VPP)

TH

D+

N (

dB

)

0.001 0.01 0.1 1 10 2020-120

-110

-100

-90

-80

-70

-60

-50

-40

-30

D015

10 k�2 k�

G = 1, f = 1 kHz, BW = 80 kHz,RL connected to V–

Figure 7-20. THD+N vs Output Amplitude, G = 1

Amplitude (VPP)

TH

D+

N (

dB

)

0.001 0.01 0.1 1 10 2020-110

-95

-80

-65

-50

-35

-20

D016

10 k�2 k�

G = –1, f = 1 kHz, BW = 80 kHz,RL connected to V–

See Figure 8-3

Figure 7-21. THD+N vs Output Amplitude, G = –1

Supply Voltage (V)

Quie

scent C

urr

ent (µ

A)

3 9 15 21 27 33 36280

310

340

370

400

430

460

DC_S

Figure 7-22. Quiescent Current vs Supply Voltage

Temperature (°C)

Quie

scent C

urr

ent per

Am

plif

ier

(µA

)

-40 -20 0 20 40 60 80 100 120240

300

360

420

480

540

600

DC4_

VS = 36VVS = 5V

Figure 7-23. Quiescent Current vs Temperature

Frequency (Hz)

Open L

oop O

utp

ut Im

pedance (�

)

100

200

300

400

500

1k 10k 100k 1M

D006

Figure 7-24. Open-Loop Output Impedance vs Frequency






Capacitance load (pF)

Overs

hoot (%

)

0 40 80 120 160 200 240 280 320 3608

12

16

20

24

28

32

36

40

44

D019

Overshoot (+)Overshoot (-)

G = 1, 100-mV output step, RL = open

Figure 7-25. Small-Signal Overshoot vs Capacitive Load

Capacitance load (pF)

Overs

hoot

(%)

40 80 120 160 200 240 280 320 3600

2

4

6

8

10

12

14

16

18

D020

Overshoot (+)Overshoot (–)

G = –1, 100-mV output step, RL = open

Figure 7-26. Small-Signal Overshoot vs Capacitive Load

Capacitance Load (pF)

Phase M

arg

in (

°)

0 40 80 120 160 200 240 280 320 36030

33

36

39

42

45

48

51

54

57

60

D018

Figure 7-27. Phase Margin vs Capacitive Load

Time (�s)

Voltage (

V)

0 200 400 600 800 1000-20

-10

0

10

20

D021

InputOutput

G = –10

Figure 7-28. Overload Recovery

Time (�s)

Voltage (

mV

)

0 20 40 60 80 100-10

-7.5

-5

-2.5

0

2.5

5

7.5

10

D022

InputOutput

G = 1, RL = open

Figure 7-29. Small-Signal Step Response, G = 1

Time (�s)

Voltage (

mV

)

0 20 40 60 80 100-10

-7.5

-5

-2.5

0

2.5

5

7.5

10

D023

InputOutput

G = –1, RL = open, RFB = 10KSee Figure 8-3

Figure 7-30. Small-Signal Step Response, G = –1

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Time (�s)

Outp

ut D

elta fro

m F

inal V

alu

e (

mV

)

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5-20

-16

-12

-8

-4

0

4

8

12

16

20

D003

G = 1, RL = open

Figure 7-31. Large-Signal Step Response (Rising)

Time (�s)

Outp

ut D

elta fro

m F

inal V

alu

e (

mV

)

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5-40

-32

-24

-16

-8

0

8

16

24

32

40

D004

G = 1, RL = open

Figure 7-32. Large-Signal Step Response (Falling)

Time (µs)

Votlage

(V)

0 20 40 60 80 100-2.5

-2

-1.5

-1

-0.5

0

0.5

1

1.5

2

2.5

AC_S

OutputInput

G = 1, RL = open

Figure 7-33. Large-Signal Step Response

Temp(�C)

Sle

w R

ate

(V/�

s)

-40 -25 -10 5 20 35 50 65 80 95 110 1250.425

0.475

0.525

0.575

0.625

0.675

D009

PositiveNegative

Figure 7-34. Slew Rate vs Temperature

Temperature (°C)

Short

-Circuit C

urr

ent (m

A)

-40 -25 -10 5 20 35 50 65 80 95 110 125-60

-40

-20

0

20

40

60

DC7_

SinkingSourcing

Figure 7-35. Short-Circuit Current vs Temperature

Frequency (Hz)

Maxim

um

Outp

ut V

oltage (

VP

P)

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

1k 10k 100k 1M

D005

VS = 15 V

Figure 7-36. Maximum Output Voltage vs Frequency






Frequency (Hz)

Channel S

epara

tion (

dB

)

-135

-125

-115

-105

-95

-85

-75

1k 10k 100k 1M

D008

Figure 7-37. Channel Separation vs FrequencyFrequency (Hz)

EM

IRR

(dB

)

24

30

36

42

48

54

60

66

72

78

84

90

1M 10M 100M 1G

D007

Figure 7-38. EMIRR (Electromagnetic Interference RejectionRatio) vs Frequency

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7.12 Typical Characteristics: LM158, LM158A, LM258, LM258A, LM358, LM358A, LM2904, andLM2904VTypical characteristics section is applicable for LM158, LM158A, LM258, LM258A, LM358, LM358A, LM2904, and LM2904V.

0

2

4

6

8

10

12

14

16

18

20

–55 –35 –15 5 25 45 65 85 105 125

InputC

urr

ent

(nA

dc)

Temperature (°C)

5Vdc

15Vdc

30Vdc

Figure 7-39. Input Current vs Temperature

0.2

0.22

0.24

0.26

0.28

0.3

0.32

0.34

0.36

0 5 10 15 20 25 30

Su

pp

lyC

urr

en

t (m

A)

Supply Voltage (Vdc)

–55C

0C

125C

Figure 7-40. Supply Current vs Supply Voltage

0

20

40

60

80

100

120

140

160

0 5 10 15 20 25 30 35 40

Avo

lV

olta

ge

Gain

(dB

)

V+ Supply Voltage (Vdc)

RL=20K

RL=2K

Figure 7-41. Voltage Gain vs Supply Voltage

0

10

20

30

40

50

60

70

80

90

100

0.1 1 10 100 1000

CM

RR

(dB

)

Frequency (kHz)

CMRR

C001

Figure 7-42. Common-Mode Rejection Ratio vs Frequency

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0 4 8 12 16 20 24 28 32 36 40

Voltage (

V)

Time (�s)

VOUT

C001

Figure 7-43. Voltage Follower Large Signal Response (50 pF)

0.20

0.25

0.30

0.35

0.40

0.45

0.50

0 2 4 6 8 10

Voltage (

V)

Time (�s)

VOUT

C001

Figure 7-44. Voltage Follower Small Signal Response (50 pF)





7.12 Typical Characteristics: LM158, LM158A, LM258, LM258A, LM358, LM358A, LM2904, andLM2904V (continued)Typical characteristics section is applicable for LM158, LM158A, LM258, LM258A, LM358, LM358A, LM2904, and LM2904V.

0

2.5

5

7.5

10

12.5

15

17.5

20

1 10 100 1k

Outp

ut

Sw

ing

(Vp

-p)

Frequency (kHz)

Figure 7-45. Maximum Output Swing vs Frequency (VCC = 15 V)

1

2

3

4

5

6

7

8

0.001 0.01 0.1 1 10 100

Outp

ut

Voltage

(Vdc)

rela

tive

toV

cc

Output Sink Current (mAdc)

Figure 7-46. Output Sourcing C

Documents

Industry-Standard Dual Operational Amplifiers · 3 lm158, lm158a, lm258, lm258a lm358, lm358a, lm358b, lm358ba, lm2904, lm2904b, lm2904ba, lm2904v slos068x –june 1976–revised