Index of /ds/BC/ - Elisa Ideatmirian77/d/bc.pdfbc237/238/ 239 npn epitaxial silicon transistor switching and amplifier applications • low noise: bc239 absolute maximum ratings (t

Index of /ds/BC/

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Parent Directory

BC237.pdf 22-Dec-99 00:02 70K

BC237_238_239.pdf 17-Apr-99 00:00 70K

BC238.pdf 22-Dec-99 00:02 70K

BC239.pdf 22-Dec-99 00:02 70K

BC307.pdf 22-Dec-99 00:02 69K

BC307_308_309.pdf 17-Apr-99 00:00 69K

BC308.pdf 22-Dec-99 00:02 69K

BC309.pdf 22-Dec-99 00:02 69K

BC327.pdf 22-Dec-99 00:02 92K

BC327_BC328.pdf 17-Apr-99 00:00 92K

BC328.pdf 22-Dec-99 00:02 92K

BC337-16.pdf 22-Dec-99 00:02 25K

BC337-25.pdf 22-Dec-99 00:02 25K

BC337.pdf 22-Dec-99 00:02 31K

BC337_338.pdf 17-Apr-99 00:00 31K

BC338.pdf 22-Dec-99 00:02 31K

BC368.pdf 22-Dec-99 00:02 35K

BC546.pdf 22-Dec-99 00:02 70K

BC546_547_548_549_550+ 20-Apr-99 00:00 70K

BC547.pdf 11-Feb-00 00:00 70K

BC547A.pdf 11-Feb-00 00:00 70K

BC547B.pdf 11-Feb-00 00:00 70K

BC547C.pdf 11-Feb-00 00:00 70K

http://www.fairchildsemi.com/ds/

http://www.fairchildsemi.com/ds/

BC548.pdf 11-Feb-00 00:00 70K

BC548A.pdf 22-Dec-99 00:02 21K

BC548B.pdf 22-Dec-99 00:02 21K

BC548C.pdf 22-Dec-99 00:02 21K

BC549.pdf 22-Dec-99 00:02 70K

BC550.pdf 22-Dec-99 00:02 70K

BC556.pdf 22-Dec-99 00:02 69K

BC556_557_558_559_560+ 20-Apr-99 00:00 69K

BC557.pdf 22-Dec-99 00:02 69K

BC558.pdf 22-Dec-99 00:02 69K

BC559.pdf 22-Dec-99 00:02 69K

BC560.pdf 22-Dec-99 00:02 69K

BC635.pdf 22-Dec-99 00:02 62K

BC635_637_639.pdf 20-Apr-99 00:00 62K

BC636.pdf 22-Dec-99 00:02 62K

BC636_638_640.pdf 20-Apr-99 00:00 62K

BC637.pdf 22-Dec-99 00:02 62K

BC638.pdf 22-Dec-99 00:02 62K

BC639.pdf 22-Dec-99 00:02 62K

BC640.pdf 22-Dec-99 00:02 62K

BC807-16.pdf 22-Dec-99 00:02 35K

BC807-25.pdf 22-Dec-99 00:02 35K

BC807-40.pdf 22-Dec-99 00:02 35K

BC807.pdf 22-Dec-99 00:02 84K

BC807_BC808.pdf 20-Apr-99 00:00 84K

BC808.pdf 22-Dec-99 00:02 84K

BC817-25.pdf 22-Dec-99 00:02 38K

BC817-40.pdf 22-Dec-99 00:02 38K

BC817.pdf 22-Dec-99 00:02 31K

BC817_BC818.pdf 20-Apr-99 00:00 31K

BC818.pdf 22-Dec-99 00:02 31K

BC846.pdf 22-Dec-99 00:02 68K

BC846_847_848_849_850+ 20-Apr-99 00:00 68K

BC847.pdf 22-Dec-99 00:02 68K

BC848.pdf 22-Dec-99 00:02 68K

BC849.pdf 22-Dec-99 00:02 68K

BC850.pdf 22-Dec-99 00:02 68K

BC856.pdf 22-Dec-99 00:02 67K

BC856_857_858_859_860+ 20-Apr-99 00:00 67K

BC857.pdf 22-Dec-99 00:02 67K

BC857A.pdf 22-Dec-99 00:02 40K

BC857B.pdf 22-Dec-99 00:02 40K

BC857C.pdf 22-Dec-99 00:02 40K

BC858.pdf 22-Dec-99 00:02 67K

BC859.pdf 22-Dec-99 00:02 67K

BC860.pdf 22-Dec-99 00:02 67K

BCP52.pdf 22-Dec-99 00:02 46K

BCP54.pdf 22-Dec-99 00:02 39K

BCV26.pdf 22-Dec-99 00:02 36K

BCV27.pdf 22-Dec-99 00:02 52K

BCW29.pdf 22-Dec-99 00:02 31K

BCW30.pdf 22-Dec-99 00:02 24K

BCW31.pdf 22-Dec-99 00:02 27K

BCW60A.pdf 22-Dec-99 00:02 31K

BCW60A_B_C_D.pdf 20-Apr-99 00:00 31K

BCW60B.pdf 22-Dec-99 00:02 31K

BCW60C.pdf 22-Dec-99 00:02 31K

BCW60D.pdf 22-Dec-99 00:02 31K

BCW61A.pdf 22-Dec-99 00:02 32K

BCW61A_B_C_D.pdf 20-Apr-99 00:00 32K

BCW61B.pdf 22-Dec-99 00:02 32K

BCW61C.pdf 22-Dec-99 00:02 32K

BCW61D.pdf 22-Dec-99 00:02 32K

BCW65C.pdf 22-Dec-99 00:02 37K

BCW68G.pdf 22-Dec-99 00:02 37K

BCW71.pdf 22-Dec-99 00:02 31K

BCX70G.pdf 22-Dec-99 00:02 31K

BCX70H.pdf 22-Dec-99 00:02 31K

BCX70J.pdf 22-Dec-99 00:02 31K

BCX70K.pdf 22-Dec-99 00:02 31K

BCX71G.pdf 22-Dec-99 00:02 31K

BCX71H.pdf 22-Dec-99 00:02 31K

BCX71J.pdf 22-Dec-99 00:02 31K

BCX71K.pdf 22-Dec-99 00:02 31K

BCX79.pdf 22-Dec-99 00:02 23K

BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING AND AMPLIFIER APPLICATIONS• LOW NOISE: BC239

ABSOLUTE MAXIMUM RATINGS (TA=25°°C)

ELECTRICAL CHARACTERISTICS (TA=25°°C)

hFE CLASSIFICATION

Characteristic Symbol Rating Unit

Collector-Emitter Voltage : BC237

: BC238/239Collector-Emitter Voltage

: BC237: BC238/239

Emitter-Base Voltage : BC237

: BC238/239Collector Current (DC)Collector DissipationJunction TemperatureStorage Temperature

VCES

VCEO

VEBO

ICPC

TJ

TSTG

50 30

45 25

6 5100500150

-55 ~ 150

VV

VV

VV

mAmW°C°C

Characteristic Symbol Test Conditions Min Typ Max Unit

Collector-Emitter Breakdown Voltage :BC237

: BC238/239Emitter Base Breakdown Voltage

: BC237: BC238/239

Collector Cut-off Current : BC237

: BC238/239DC Current GainCollector-Emitter Saturation Voltage

Collector Base Saturation Voltage

Base Emitter On VoltageCurrent Gain Bandwidth Product

Collector Base CapacitanceEmitter Base CapacitanceNoise Figure : BC237/238

: BC239 : BC239

BVCEO

BVEBO

ICES

hFE

VCE (sat)

VBE (sat)

VBE (on)fT

CCBO

CEBO

NF

NF

IC=2mA, IB=0

IE=1µA, IC=0

VCE=50V, IB=0VCE=30V, IB=0VCE=5V, IC=2mAIC=10mA, IB=0.5mAIC=100mA, IB=5mAIC=10mA, IB=0.5mAIC=100mA, IB=5mAVCE=5V, IC=2mAVCE=3V, IC=0.5mA

VCE=5V, IC=10mA

VCB=10V, f=1MHzVEB=0.5V, f=1MHzVCE=5V, IC=0.2mA,f=1KHz RG=2kohmVCE=5V, IC=0.2mARG=2kohm, f=30~15KHz

4525

65

120

0.55

150

0.20.2

0.070.2

0.730.870.62

85

250

3.582

1515

8000.20.6

0.831.050.7

6

1044

VV

VV

nAnA

VVVVV

MHz

MHz

pFpFdBdBdB

Classification A B C

hFE 120-220 180-460 380-800

TO-92

1. Collector 2. Base 3. Emitter

1999 Fairchild Semiconductor Corporation

Rev. B


TRADEMARKS

ACEx™CoolFET™CROSSVOLT™E2CMOSTM

FACT™FACT Quiet Series™FAST®

FASTr™GTO™HiSeC™

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:

ISOPLANAR™MICROWIRE™POP™PowerTrench™QS™Quiet Series™SuperSOT™-3SuperSOT™-6SuperSOT™-8TinyLogic™

1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to theuser.

2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety oreffectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

Formative orIn Design

First Production

Full Production

Not In Production

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHERNOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILDDOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF OTHERS.

BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR

SWITCHING AND AMPLIFIER APPLICATIONS• LOW NOISE: BC309



hFE CLASSIFICATION


Collector-Emitter Voltage : BC307

: BC308/309Collector-Emitter Voltage

: BC307: BC308/309

Emitter-Base VoltageCollector Current (DC)Collector DissipationJunction TemperatureStorage Temperature

VCES

VCEO

VEBO

ICPC

TJ

TSTG

-50-30

-45-25-5

-100500150

-55 ~ 150

VV

VVV

mAmW°C°C


Collector Emitter Breakdown Voltage: BC307: BC308/309

Collector Emitter Breakdown Voltage : BC307: BC308/309

Emitter Base Breakdown VoltageCollector Cut-off Current

: BC307: BC238/239

DC Current GainCollector-Emitter Saturation Voltage


Base Emitter On VoltageCurrent Gain Bandwidth Product

Collector Base CapacitanceEmitter Base CapacitanceNoise Figure : BC237/238

: BC239 : BC239

BVCEO

BVCES

BVEBO

ICES

hFE

VCE (sat)

VBE (sat)

VBE (on)fT

CCBO

CEBO

NF

NF

IC= -2mA, IB=0

IC= -10µA, IB=0

IE= -10µA, IB=0

VCE= -45V, IB=0VCE= -25V, IB=0VCE= -5V, IC= -2mAIC= -10mA, IB= -0.5mAIC= -100mA, IB= -5mAIC= -10mA, IB= -0.5mAIC= -100mA, IB= -5mAVCE= -5V, IC= -2mAVCE= -5V, IC= -10mA

VCB= -10V, f=1MHzVEB= -0.5V, f=1MHzVCE= -5V, IC= -0.2mA,RG=2KΩ, f=1KHzVCE= -5V, IC= -0.2mARG=2KΩ, f=30~15KHz

-45-25

-50-30-5

120

-0.55

-2-2

-0.5-0.7

-0.85-0.62

130

12

2

-15-15800-0.3

-0.7

6

1044

VV

VVV

nAnA

VVVVV

MHz

pFpFdBdBdB


hFE 120-220 180-460 380-800

TO-92


Rev. B


TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BC327/328 PNP EPITAXIAL SILICON TRANSISTOR

SWITCHING AND AMPLIFIER APPLICATIONS• Suitable for AF-Driver stages and low power output stages• Complement to BC337/BC338



hFE CLASSIFICATION


Collector-Emitter Voltage: BC327: BC328



VCES

VCEO

VEBO

ICPC

TJ

TSTG

-50-30

-45-25-5

-800625150

-55 ~ 150

VV

VVV

mAmW°C°C


Collector Emitter Breakdown Voltage: BC327: BC328



: BC307: BC338

DC Current Gain

Collector-Emitter Saturation VoltageBase Emitter On VoltageCurrent Gain Bandwidth Product

Collector Base Capacitance

BVCEO

BVCES

BVEBO

ICES

hFE

hFE2VCE (sat)VBE (on)fT

CCBO

IC= -10mA, IB=0

IC= -0.1mA, IB=0

IE= -10mA, IC=0

VCE= -45V, IB=0VCE= -25V, IB=0VCE= -1V, IC= -100mAVCE= -1V, IC= -30mAIC= -500mA, IB= -50mAVCE= -1V, IC= -300mAVCE= -5V, IC= -10mA

VCB= -10V, f=1MHz

-45-25

-50-30-5

10060

-2-2

100

12

-100-100630

-0.7-1.2

VV

VVV

nAnA

VV

MHz

pF


hFE 100-250 160-400 250-630

hFE2 60- 100- 170-

TO-92



Rev. B



TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BC

337-16 / BC

337-25Discrete POWER & Signal

Technologies

NPN General Purpose Amplifier

BC337-16BC337-25

This device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Sourced fromProcess 12. See TN3019A for characteristics.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 V

VCES Collector-Base Voltage 50 V

VEBO Emitter-Base Voltage 5.0 V

IC Collector Current - Continuous 1.0 A

TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

Symbol Characteristic Max UnitsBC337-16 / BC337-25

PD Total Device DissipationDerate above 25°C

6255.0

mWmW/°C

RθJC Thermal Resistance, Junction to Case 83.3 °C/W

RθJA Thermal Resistance, Junction to Ambient 200 °C/W

EB C

TO-92

1997 Fairchild Semiconductor Corporation 33716-25, Rev B

BC

337-16 / BC

337-25NPN General Purpose Amplifier

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

OFF CHARACTERISTICS

Symbol Parameter Test C onditions Min Max Units

V(BR)CEO Collector-Emitter BreakdownVoltage

IC = 10 mA, IB = 0 45 V

V(BR)CES Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 50 V

V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 µA, IC = 0 5.0 V

ICBO Collector Cutoff Current VCB = 20 V, IE = 0, TA = +25 °CVCB = 20 V, IE = 0, TA = +150°C

1005.0

nAµA

IEBO Emitter Cutoff Current VEB = 5.0 V, IC = 0 10 µA

ON CHARACTERISTICShFE DC Current Gain VCE = 1.0 V, IC = 100 mA

337-16337-25

VCE = 1.0 V, IC = 500 mA

10016040

250400

VCE(sat) Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 0.7 V

VBE(on) Base-Emitter On Voltage VCE = 1.0 V, IC = 500 mA 1.2 V

BC337/338 NPN EPITAXIAL SILICON TRANSISTOR




hFE CLASSIFICATION





VCES

VCEO

VEBO

ICPC

TJ

TSTG

5030

45255

800625150

-55 ~ 150

VV

VVV

mAmW°C°C





: BC337: BC338

DC Current Gain

Collector-Emitter Saturation VoltageBase Emitter On VoltageCurrent Gain Bandwidth Product

Collector Base Capacitance

BVCEO

BVCES

BVEBO

ICES

hFE1hFE2VCE (sat)VBE (on)fT

CCBO

IC=10mA, IB=0

IC=0.1mA, IB=0

IE=0.1mA, IC=0

VCE=45V, IB=0VCE=25V, IB=0VCE=1V, IC=100mAVCE=1V, IC=300mAIC=500mA, IB=50mAVCE=1V, IC=300mAVCE=5V, IC=10mA

VCB=10V, f=1MHz

4525

5030-5

10060

22

100

12

100100630

0.71.2

VV

VVV

nAnA

VV

MHz

pF

Classification 16 25 40

hFE 100-250 160-400 250-630

hFE2 60- 100- 170-

TO-92



Rev. B

TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BC

368

BC368

NPN General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 1.5 A.Sourced from Process 37.



NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Thermal Characteristic s TA = 25°C unless otherwise noted

Symbol Characteristic Max UnitsBC368


6255.0

mWmW/°C



BC

368

Symbol Parameter Value Units

VCEO Collector-Emitter Voltage 20 V





BC E

TO-92


BC

368


OFF CHARACTERISTICS

Symbol Parameter Test Conditions Min Max Units

ON CHARACTERISTICShFE DC Current Gain IC = 5.0 mA, VCE = 10 V

IC = 0.5 A, VCE = 1.0 VIC = 1.0 A, VCE = 1.0 V

508560

375

VCE(sat) Collector-Emitter Saturation Voltage IC = 1.0 A, IB = 100 mA 0.5 V

VBE(on) Base-Emitter On Voltage IC = 1.0 A, VCE = 1.0 V 1.0 V

SMALL SIGNAL CHARACTERISTICSfT Current Gain - Bandwidth Product IC = 10 mA, VCE = 5.0 V,

f = 35 MHz45 MHz

V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 20 V



ICBO Collector-Cutoff Current VCB = 25 V, IE = 0VCB = 25 V, IE = 0, TA = 150°C

101.0

µAmA

IEBO Emitter-Cutoff Current VEB = 5.0 V, IC = 0 10 µA

NPN General Purpose Amplifier(continued)

Typical Characteristics

Typical Pulsed Current Gainvs Collector Current

0.001 0.01 0.1 10

100

200

300

400

500

I - COLLECTOR CURRENT (A)h

- T

YP

ICA

L P

ULS

ED

CU

RR

EN

T G

AIN

FE

- 40 ºC

25 °C

C

V = 5VCE

125 °C

Collector-Emitter SaturationVoltage vs Collector Current

P 3

0.01 0.1 1

0.01

0.1

1

I - COLLECTOR CURRENT (A)V

-

CO

LLE

CTO

R-E

MIT

TE

R V

OLT

AG

E (

V)

CE

SAT

C

ββ = 10

125 ºC

- 40 ºC

25 °C

BC

368NPN General Purpose Amplifier

(continued)

Typical Characteristics (continued)

Base-Emitter ON Voltage vsCollector Current

P 3

1 10 100 10000.2

0.4

0.6

0.8

1

I - COLLECTOR CURRENT (mA)V

-

BA

SE

-EM

ITT

ER

ON

VO

LTA

GE

(V

)B

E(O

N)

125 ºC

- 40 ºC

25 °C

C

V = 5VCE

Base-Emitter SaturationVoltage vs Collector Current

P 3

0.01 0.1 10.2

0.4

0.6

0.8

1

1.2

1.4

I - COLLECTOR CURRENT (A)

V

-

BA

SE

-EM

ITT

ER

VO

LTA

GE

(V

)B

ES

AT

C

ββ = 10

125 ºC

- 40 ºC

25 °C

Collector-Cutoff Currentvs Ambient Temperature

25 50 75 100 125 150

0.1

1

10

100

T - AMBIENT TEMPERATURE ( C)

I

- C

OLL

EC

TO

R C

UR

RE

NT

(n

A)

A

V = 20VCB

º

CB

O

Collector-Base Capacitancevs Collector-Base Voltage

Pr 37

0 4 8 12 16 20 24 280

10

20

30

40

V - COLLECTOR-BASE VOLTAGE (V)

C

-

CO

LLE

CT

OR

-BA

SE

CA

PA

CIT

AN

CE

(pF

)

CBOB

O

Gain Bandwidth Productvs Collector Current

1 10 100 10000

100

200

300

400

500

I - COLLECTOR CURRENT (mA)h

- G

AIN

BA

ND

WID

TH P

RO

DU

CT

(M

Hz)

C

FE

V = 10VCE

Power Dissipation vsAmbient Temperature

0 25 50 75 100 125 1500

100

200

300

400

500

600

700

TEMPER AT URE ( C)

P

- PO

WE

R D

ISS

IPA

TIO

N (

mW

)D

o

TO-92

TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


NPN EPITAXIALBC546/547/548/549/550 SILICON TRANSISTOR

SWITCHING AND AMPLIFIER• HIGH VOLTAGE: BC546, VCEO=65V• LOW NOISE: BC549, BC550• Complement to BC556 ... BC560



hFE CLASSIFICATION


Collector Base Voltage: BC546: BC547/550: BC548/549

Collector-Emitter Voltage: BC546: BC547/550: BC548/549/550

Emitter-Base Voltage: BC546/547: BC548/549/550

Collector Current (DC)Collector DissipationJunction TemperatureStorage Temperature

VCBO

VCEO

VEBO

ICPC

TJ

TSTG

805030

654530

65

100500150

-65 ~ 150

VVV

VVVVVV

mAmW°C°C


Collector Cut-off CurrentDC Current GainCollector Emitter Saturation Voltage


Base Emitter On Voltage

Current Gain Bandwidth Product

Collector Base CapacitanceEmitter Base CapacitanceNoise Figure : BC546/547/548

: BC549/550

: BC549

: BC550

ICBO

hFE

VCE (sat)

VBE (on)

VBE (on)

fT

CCBO

CEBO

NF

NF

VCB=30V, IE=0VCE=5V, IC=2mAIC=10mA, IB=0.5mAIC=100mA, IB=5mAIC=10mA, IB=0.5mAIC=100mA, IB=5mAVCE=5V, IC=2mAVCE=5V, IC=10mAVCE=5V, IC=10mA

VCB=10V, f=1MHzVEB=0.5V, f=1MHzVCE=5V, IC=200µAf=1KHz, RG=2KΩVCE=5V, IC=200µARG=2KΩ,f=30~15000MHz

110

580

90200700900660

300

3.592

1.2

1.4

1.4

15800250600

700720

6

10

4

4

3

nA

mAmAmAmAmAmAMHz

pFpFdB

dB

dB

dB


hFE 110-220 200-450 420-800

TO-92



Rev. B


TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BC

548 / BC

548A / B

C548B

/ BC

548CDiscrete POWER & Signal

Technologies


BC548BC548ABC548BBC548C

This device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourced fromProcess 10. See PN100A for characteristics.








IC Collector Current - Continuous 500 mA


Symbol Characteristic Max UnitsBC548 / A / B / C


6255.0

mWmW/°C



EB C

TO-92

1997 Fairchild Semiconductor Corporation 548-ABC, Rev B

BC

548 / BC

548A / B

C548B

/ BC

548CNPN General Purpose Amplifier

(continued)


OFF CHARACTERISTICS



V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 30 V



ICBO Collector Cutoff Current VCB = 30 V, IE = 0VCB = 30 V, IE = 0, TA = +150 °C

155.0

nAµA

ON CHARACTERISTICShFE DC Current Gain VCE = 5.0 V, IC = 2.0 mA 548

548A 548B

548C

110110200420

800220450800

VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mAIC = 100 mA, IB = 5.0 mA

0.250.60

VV

VBE(on) Base-Emitter On Voltage VCE = 5.0 V, IC = 2.0 mAVCE = 5.0 V, IC = 10 mA

0.58 0.700.77

VV

SMALL SIGNAL CHARACTERISTICShfe Small-Signal Current Gain IC = 2.0 mA, VCE = 5.0 V,

f = 1.0 kHz125 900

NF Noise Figure VCE = 5.0 V, IC = 200 µA,RS = 2.0 kΩ, f = 1.0 kHz,BW = 200 Hz

10 dB

PNP EPITAXIALBC556/557/558/559/560 SILICON TRANSISTOR

SWITCHING AND AMPLIFIER• HIGH VOLTAGE: BC556, VCEO= -65V• LOW NOISE: BC559, BC560• Complement to BC546 ... BC 550



hFE CLASSIFICATION


Collector-Base Capacitance: BC556: BC557/560: BC558/559

Collector-Emitter Voltage: BC556: BC557/560: BC558/559


VCBO

VCEO

VEBO

ICPC

TJ

TSTG

-80-50-30

-65-45-30-5

-100500150

-65 ~ 150

VVV

VVVV

mAmW°C°C






Collector Base CapacitanceNoise Figure : BC556/557/558 : BC559/560

: BC559 : BC560

ICBO

hFE

VCE (sat)

VBE (on)

VBE (on)

fT

CCBO

NF

NF

VCB= -30V, IE=0VCE= -5V, IC=2mAIC= -10mA, IB= -0.5mAIC= -100mA, IB= -5mAIC= -10mA, IB= -0.5mAIC= -100mA, IB= -5mAVCE= -5V, IC= -2mAVCE= -5V, IC= -10mAVCE= -5V, IC= -10mA

VCB= -10V, f=1MHzVCE= -5V, IC= -200µAf=1KHz, RG=2KΩVCE= -5V, IC= -200µARG=2KΩf=30~15000MHz

110

-600

-90-250-700-900-660

150

21

1.21.2

-15800

-300-650

-750-800

610442

nA

mVmVmVmVmVmVMHz

pFdBdB

dBdB


hFE 110-220 200-450 420-800

TO-92



Rev. B


TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER



SWITCHING AND AMPLIFIER APPLICATIONS• Complement to BC635/638/640


• PW=5ms, Duty Cycle=10%



Collector Emitter Voltage : BC635at RBE=1Kohm : BC637 : BC639Collector Emitter Voltage : BC635 : BC637 : BC639Collector Emitter Voltage : BC635 : BC637 : BC639Emitter Base VoltageCollector CurrentPeak Collector CurrentBase CurrentCollector DissipationJunction TemperatureStorage Temperature

VCER

VCES

VCEO

VEBO

ICICP

IBPC

TJ

TSTG

45 60100 45 60100 45 60 80 5 1 1.5100 1150

-65 ~ 150

VVVVVVVVVVAA

mAW°C°C


Collector-Emitter Breakdown Voltage: BC635: BC736: BC639

Collector Cut-off CurrentEmitter Cut-off CurrentDC Current Gain

:BC635: BC637/BC639

Collector Emitter Saturation VoltageBase Emitter On VoltageCurrent Gain Bandwidth Product

BVCEO

ICBO

IEBO

hFE

VCE(sat)VBE(on)fT

IC=10mA, IB=0

VCB=30V, IE=0VEB=5V, IC=0VCE=2V, IC=5mAVCE=2V, IC=150mA

VCE=2V, IC=500mAIC=500mA, IB=50mAVCE=2V, IC=500mAVCE=5V, IC=10mA, f=50MHz

456080

25404025

100

0.10.1

250160

0.51

VVV

µAµA

VV

MHz

TO-92

1. Emitter 2. Collector 3. Base


Rev. B


TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER



SWITCHING AND AMPLIFIER APPLICATIONS• Complement to BC635/637/639




Collector Emitter Voltage : BC636at RBE=1Kohm : BC638

: BC640Collector Emitter Voltage : BC636 : BC638 : BC640Collector Emitter Voltage : BC636

: BC638 : BC640Emitter Base VoltageCollector CurrentPeak Collector CurrentBase CurrentCollector DissipationJunction TemperatureStorage Temperature

VCER

VCES

VCEO

VEBO

ICICP

IBPC

TJ

TSTG

-45-60-100-45-60-100-45-60-80-5-1

-1.5 -100

1150

-65 ~ 150

VVVVVVVVVVAA

mAW°C°C


Collector-Emitter Breakdown Voltage: BC636: BC638: BC640

Collector Cut-off CurrentEmitter Cut-off CurrentDC Current Gain

: BC635: BC637/BC639

Collector Emitter Saturation VoltageBase Emitter On VoltageCurrent Gain Bandwidth Product

BVCEO

ICBO

IEBO

hFE

VCE (sat)VBE (on)fT

IC= -10mA, IB=0

VCB= -30V, IE=0VEB= -5V, IC=0VCE= -2V, IC= -5mAVCE= -2V, IC= -150mA

VCE= -2V, IC= -500mAIC= -500mA, IB= -50mAVCE= -2V, IC= -500mAVCE= -5V, IC= -10mA, f=50MHz

-45-60-80

25404025

100

-0.1-0.1

250160

-0.5-1

VVV

µAµA

VV

MHz

TO-92

1. Emitter 2. Collector 3. Base


Rev. B


TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BC

807-16 / BC

807-25 / BC

807-40

BC807-16BC807-25BC807-40

PNP General Purpose AmplifierThis device is designed for general purpose amplifier and switchingapplications at currents to 1.0 A. Sourced from Process 78.





Symbol Characteristic Max Units*BC807-16 / -25 / -40


3502.8

mWmW/°C







C

B

E

SOT-23Mark: 5A. / 5B. / 5C.

*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

Discrete POWER & SignalTechnologies

ã 1997 Fairchild Semiconductor Corporation

BC

807-16 / BC

807-25 / BC

807-40


OFF CHARACTERISTICS


ON CHARACTERISTICShFE DC Current Gain IC = 100 mA, VCE = 1.0 V - 16

- 25- 40

IC = 500 mA, VCE = 1.0 V

10016025040

250400600


VBE(on) Base-Emitter On Voltage IC = 500 mA, VCE = 1.0 V 1.2 V




ICBO Collector-Cutoff Current VCB = 20 VVCB = 20 V, TA = 150°C

1005.0

nAµA

PNP General Purpose Amplifier(continued)



0.01 0.1 1 1.50

0.1

0.2

0.3

0.4

0.5

0.6


-

CO

LLE

CTO

R-E

MIT

TE

R V

OLT

AG

E (

V)

CE

SAT

C

β = 10

125 ºC

- 40 ºC

25 °C

Typical Pulsed Current Gain

vs Collector Current

0.01 0.1 10

100

200

300

400


- T

YP

ICA

L P

ULS

ED

CU

RR

EN

T G

AIN

FE

- 40 ºC

25 °C

C

V = 5VCE

125 °C

BC

807-16 / BC

807-25 / BC

807-40PNP General Purpose Amplifier

(continued)


0 25 50 75 100 125 1500

50

100

150

200

250

300

350

TEMPERATURE ( C)

P

- P

OW

ER

DIS

SIP

ATIO

N (

mW

)D

o

SOT-23



1 10 100 10000.2

0.4

0.6

0.8

1


-

BA

SE

-EM

ITT

ER

ON

VO

LTA

GE

(V

)B

E(O

N)

125 ºC

- 40 ºC

25 °C

C

V = 5VCE


25 50 75 100 125 150

0.1

1

10

100


I

- C

OLL

EC

TOR

CU

RR

EN

T (

nA)

A

V = 40VCB

º

CB

O


1 10 100 1000

0.4

0.6

0.8

1

I - COLLECTOR CURRENT (mA)

V

-

BA

SE

-EM

ITT

ER

VO

LTA

GE

(V)

BE

SAT

C

β = 10

125 ºC

- 40 ºC

25 °C


Pr 78

0 4 8 12 16 20 24 280

10

20

30

40


C

-

CO

LLE

CTO

R-B

AS

E C

APA

CIT

AN

CE

(pF

)

CBOB

O

F = 1.0 MHz


1 10 100 10000

50

100

150

200

250


- G

AIN

BA

ND

WID

TH

PR

OD

UC

T (M

Hz)

C

FE

V = 10VCE

TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR




hFE CLASSIFICATION

MARKING CODE


Collector Emitter Voltage : BC807 : BC808Collector Emitter Voltage : BC807

: BC808Emitter-Base VoltageCollector Current (DC)Collector DissipationJunction TemperatureStorage Temperature

VCES

VCEO

VEBO

ICPC

TJ

TSTG

-50-30-45-25-5

-800-310150

-65 ~ 150

VVVVV

mAmW°C°C


Collector-Emitter Breakdown Voltage: BC807: BC808


Emitter-Base Breakdown VoltageCollector Cut-off CurrentEmitter Cut-off CurrentDC Current Gain

Collector-Emitter Saturation VoltageBase-Emitter On VoltageCurrent Gain Bandwidth Product

Collector-Base Capacitance

BVCEO

BVCES

BVEBO

ICES

IEBO


CCBO

IC= -10mA, IB=0

IC= -0.1mA, IB=0

IE= -0.1mA, IC=0VCE= -25V, IB=0VEB= -4V, IC=0VCE= -1V, IC= -100mAVCE= -1V, IC= -300mAIC= -500mA, IB= -50mAVCE= -1V, IC= -300mAVCE= -5V, IC= -10mAf=50MHzVCB= -10V, f=1MHz

-45-25

-50-30-5

10060

100

-100-100630

-0.7-1.2

12

VV

VVVnAnA

VV

MHz

pF


hFE1 100-250 160-400 250-630

hFE2 60- 100- 170-

TYPE 807-16 807-25 807-40 808-16 808-25 808-40

MARKING 9FA 9FB 9FC 9GA 9GB 9GC

SOT-23

1. Base 2. Emitter 3. Collector


Rev. B



TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BC

817-25 / BC

817-40

BC817-25BC817-40

NPN General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 1.2 A.Sourced from Process 38.





Symbol Characteristic Max Units*BC817-25 / BC817-40


3502.8

mWmW/°C







SOT-23

C

E

BMark: 6B. / 6C.




BC

817-25 / BC

817-40


OFF CHARACTERISTICS






1005.0

nAµA

ON CHARACTERISTICShFE DC Current Gain IC = 100 mA, VCE = 1.0 V - 25

- 40IC = 500 mA, VCE = 1.0 V

16025040

400600






0.01 0.1 1 30

0.1

0.2

0.3

0.4

0.5

0.6


-

CO

LLE

CTO

R-E

MIT

TE

R V

OLT

AG

E (

V)

CE

SAT

C

β = 10

125 ºC

- 40 ºC

25°C


0.001 0.01 0.1 1 20

100

200

300

400

500


- T

YP

ICA

L P

ULS

ED

CU

RR

EN

T G

AIN

FE

- 40 ºC

25 °C

C

V = 5VCE

125 °C

BC

817-25 / BC

817-40NPN General Purpose Amplifier

(continued)



P 38

0.001 0.01 0.1 10.2

0.4

0.6

0.8

1


-

BA

SE

-EM

ITT

ER

ON

VO

LTA

GE

(V

)B

E(O

N)

C

V = 5VCE

125 ºC

- 40 ºC

25°C


P

0.001 0.01 0.1 10.2

0.4

0.6

0.8

1


-

BA

SE

-EM

ITT

ER

ON

VO

LTA

GE

(V)

BE

(ON

)

C

V = 5VCE

125 ºC

- 40 ºC

25°C


25 50 75 100 125 150

0.1

1

10

100


I

- C

OLL

EC

TOR

CU

RR

EN

T (

nA)

A

V = 40VCB

º

CB

O


Pr 38

0 4 8 12 16 20 24 280

10

20

30

40


C

-

CO

LLE

CTO

R-B

AS

E C

APA

CIT

AN

CE

(pF

)

CBOB

O


1 10 100 10000

100

200

300

400

500


- G

AIN

BA

ND

WID

TH

PR

OD

UC

T (

MH

z)

C

FE

V = 10VCE


0 25 50 75 100 125 1500

50

100

150

200

250

300

350

TEMPERATURE ( C)

P

- P

OW

ER

DIS

SIP

ATIO

N (

mW

)D

o

SOT-23

TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR




hFE CLASSIFICATION

MARKING CODE


Collector Emitter Voltage : BC817 : BC818

Collector Emitter Voltage : BC817 : BC818


VCES

VCEO

VEBO

ICPC

TJ

TSTG

503045255

800310150

-65 ~ 150

VVVVV

mAmW°C°C




Emitter-Base Breakdown VoltageCollector Cut-off CurrentEmitter Cut-off CurrentDC Current Gain

Collector-Emitter Saturation VoltageBase-Emitter On VoltageCurrent Gain Bandwidth Product

Collector-Base Capacitance

BVCEO

BVCES

BVEBO

ICES

IEBO


CCBO

IC=10mA, IB=0

IC=0.1mA, IB=0

IE=0.1mA, IC=0VCE=25V, IB=0VEB=4V, IC=0VCE=1V, IC=100mAVCE=1V, IC=300mAIC=500mA, IB=50mAVCE=1V, IC=300mAVCE=5V, IC=10mAf=50MHzVCB=10V, f=1MHz

4525

50305

10060

100

100100630

0.71.2

12

VV

VVVnAnA

VV

MHz

pF


hFE1 100-250 160-400 250-630

hFE2 60- 100- 170-

TYPE 817-16 817-25 817-40 818-16 818-25 818-40

MARKING 8FA 8FB 8FC 8GA 8GB 8GC

SOT-23



Rev. B

TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER



SWITCHING AND AMPLIFIER APPLICATIONS• Suitable for automatic insertion in thick and thin-film circuits• LOW NOISE: BC849, BC850• Complement to BC856 ... BC860



hFE CLASSIFICATION

MARKING CODE


Collector Base Voltage : BC846 : BC847/850 : BC848/849Collector Emitter Voltage : BC846 : BC847/850 : BC848/849Emitter-Base Voltage : BC846/847 : BC848/849/850Collector Current (DC)Collector DissipationJunction TemperatureStorage Temperature

VCBO

VCEO

VEBO

ICPC

TJ

TSTG

805030

654530

65

100310150

-65 ~ 150

VVV

VVV

VV

mAmW°C°C






Collector Base CapacitanceEmitter Base CapacitanceNoise Figure : BC846/847/848 : BC849/850 : BC849

: BC850

ICBO

hFE

VCE (sat)

VBE (sat)

VBE (on)

fT

CCBO

CEBO

NF

NF

VCB=30V, IE=0VCE=5V, IC=2mAIC=10mA, IB=0.5mAIC=100mA, IB=5mAIC=10mA, IB=0.5mAIC=100mA, IB=5mAVCE=5V, IC=2mAVCE=5V, IC=10mAVCE=5V, IC=10mAf=100MHzVCB=10V, f=1MHzVEB=0.5V, f=1MHzVCE=5V, IC=200µAf=1KHz, RG=2KΩVCE=5V, IC=200µARG=2KΩf=30~15000Hz

110

580

90200700900660

300

3.592

1.21.41.4

15800250600

700720

6

10443

nA

mVmVmVmVmVmVMHz

pFpFdBdBdBdB


hFE 110-220 200-450 420-800

TYPE 846A 846B 846C 847A 847B 847C 848A 848B 848C 849A 849B 849C 850A 850B 850C

MARK 8AA 8AB 8AC 8BA 8BB 8BC 8CA 8CB 8CC 8DA 8DB 8DC 8EA 8EB 8EC

SOT-23



Rev. B


TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER



SWITCHING AND AMPLIFIER APPLICATIONS• Suitable for automatic insertion in thick and thin-film circuits• LOW NOISE: BC859, BC860• Complement to BC846 ... BC850



hFE CLASSIFICATION

MARKING CODE


Collector-Base Voltage: BC856: BC857/860: BC858/859

Collector-Emitter Voltage: BC856: BC857/860: BC858/859


VCBO

VCEO

VEBO

ICPC

TJ

TSTG

-80-50-30

-65-45-30-5

-100310150

-65 ~ 150

VVV

VVVV

mAmW°C°C


Collector Cut-off CurrentDC Current GainCollector-Emitter Saturation Voltage

Collector-Base Saturation Voltage

Base-Emitter On Voltage


Collector-Base CapacitanceNoise Figure : BC856/857/858

: BC859/860

: BC859 : BC860

ICBO

hFE

VCE (sat)

VBE (sat)

VBE (on)

fT

CCBO

NF

NF

VCB= -30V, IE=0VCE= -5V, IC= -2mAIC= -10mA, IB= -0.5mAIC= -100mA, IB= -5mAIC= -10mA, IB= -0.5mAIC= -100mA, IB= -5mAVCE= -5V, IC= -2mAVCE= -5V, IC= -10mAVCE= -5V, IC= -10mAf=100MHzVCB= -10V, f=1MHzVCE= -5V, IC= -200µAf=1KHz, RG=2KΩVCE= -5V, IC= -200µARG=2KΩf=30~15000Hz

110

-600

-90-250-700-900-660

150

2

1

1.2

1.2

-15800

-300-650

-750-800

610

4

4

2

nA

mVmVmVmVmVmVMHz

pFdB

dB

dB

dB


hFE 110-220 200-450 420-800

TYPE 856A 856B 856C 857A 857B 857C 858A 858B 858C 859A 859B 859C 860A 860B 860C

MARK 9AA 9AB 9AC 9BA 9BB 9BC 9CA 9CB 9CC 9DA 9DB 9DC 9EA 9EB 9EC

SOT-23



Rev. B


TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BC

857A / B

C857B

/ BC

857C

BC857ABC857BBC857C

PNP General Purpose AmplifierThis device is designed for general purpose amplifier applicationsat collector currents to 300 mA. Sourced from Process 68.

Absolute Maximum Ratings * TA = 25°C unless otherwise noted



Thermal Characteristic s TA = 25°C unless otherwise noted


VCBO Collector-Base Voltage 50 V




Symbol Character ist ic Max Units*BC857A / B / C


3502.8

mWmW/°C


C

B

E

SOT-23Mark: 3E / 3F / 3G



BC

857A / B

C857B

/ BC

857C


OFF CHARACTERISTICS




V(BR)EBO Emitter-Base Breakdown Voltage IE = 1.0 µA, IC = 0 5.0 V


154.0

nAµA

ON CHARACTERISTICShFE DC Current Gain IC = 2.0 mA, VCE = 5.0 V

BC857ABC857BBC857C

125220420

250475800

VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mAIC = 100 mA, IB = 5.0 mA

0.30.65

VV

VBE(on) Base-Emitter On Voltage IC = 2.0 mA, VCE = 5.0 VIC = 10 mA, VCE = 5.0 V

0.6 0.750.82

VV

SMALL SIGNAL CHARACTERISTICSfT Current Gain - Bandwidth Product IC = 10 mA, VCE = 5.0,

f = 100 mHz100 MHz

Cobo Output Capacitance VCB = 10 V, f = 1.0 MHz 4.5 pF

NF Noise Figure IC = 0.2 mA, VCE = 5.0,RS = 2.0 kΩ, f = 1.0 kHz,BW = 200 Hz

10 dB




P 68

0.1 1 10 100 3000

0.05

0.1

0.15

0.2

0.25

0.3


-

CO

LLE

CTO

R E

MIT

TE

R V

OLT

AG

E (

V)

CCE

SAT

25 °C

- 40 ºC125 ºC

β = 10


0.01 0.1 1 10 1000

100

200

300

400

500


- T

YP

ICA

L P

ULS

ED

CU

RR

EN

T G

AIN

C

FE

125 °C

25 °C

- 40 °C

V = 5VCE

BC

857A / B

C857B

/ BC

857CPNP General Purpose Amplifier

(continued)



0.1 1 10 100 3000

0.2

0.4

0.6

0.8

1

1.2


V

-

BA

SE

EM

ITT

ER

VO

LTA

GE

(V

)

C

BE

SAT

β = 10

25 °C- 40 ºC

125 ºC

Base Emitter ON Voltage vsCollector Current

0.1 1 10 100 2000

0.2

0.4

0.6

0.8

1


-

BA

SE

EM

ITT

ER

ON

VO

LTA

GE

(V

)

C

BE

ON

V = 5VCE

25 °C

- 40 ºC

125 ºC

Collector-Cutoff Currentvs. Ambient Temperature

25 50 75 100 1250.01

0.1

1

10

100


I

- C

OLL

EC

TOR

CU

RR

EN

T (

nA)

A

CB

O

º

V = 50VCB

Ω

CE

R

Collector-Emitter BreakdownVoltage with ResistanceBetween Emitter-Base

0.1 1 10 100 100070

75

80

85

90

95

RESISTANCE (k )BV

- B

RE

AK

DO

WN

VO

LTA

GE

(V

)

Collector Saturation Region

100 300 700 2000 40000

1

2

3

4

I - BASE CURRENT (uA)

V

- C

OLL

EC

TOR

-EM

ITT

ER

VO

LTA

GE

(V

)C

E

B

50 mA 300 mA100 uA

Ta = 25°C

Ic =

Input and Output Capacitancevs Reverse Voltage

0.1 1 10 100

10

100

V - COLLECTOR VOLTAGE(V)

CA

PA

CIT

AN

CE

(pF

)

Cib

Cob

f = 1.0 MHz

ce

BC

857A / B

C857B

/ BC

857CPNP General Purpose Amplifier

(continued)



P 68

1 10 20 50 100 1500

10

20

30

40

I - COLLECTOR CURRENT (mA)f -

GA

IN B

AN

DW

IDT

H P

RO

DU

CT

(M

Hz)

C

T

V = 5Vce


0 25 50 75 100 125 1500

50

100

150

200

250

300

350

TEMPERATURE ( C)

P

- P

OW

ER

DIS

SIP

ATIO

N (

mW

)D

o

SOT-23

TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BC

P52

PNP General Purpose Amplifier





BCP52

This device is designed for general purpose medium poweramplifiers and switching circuits requiring collector currentsto 1.0 A. Sourced from Process 78.

BC

C

SOT-223

E







Symbol Characteristic Max UnitsBCP52


1.512

WmW/°C

RθJA Thermal Resistance, Junction to Ambient 83.3 °C/W



BC

P52



OFF CHARACTERISTICS

Symbol Parameter Test Conditions Min Max Units





10010

nAµA



IC = 150 mA, VCE = 2.0 VIC = 500 mA, VCE = 2.0 V

254025

250





P 8

0.01 0.1 1 1.50

0.1

0.2

0.3

0.4

0.5

0.6


-

CO

LLE

CT

OR

-EM

ITT

ER

VO

LTA

GE

(V

)C

ESA

T

C

ββ = 10

125 ºC

- 40 ºC

25 °C

Typical Pulsed Current Gain

vs Collector Current

0.01 0.1 10

100

200

300

400


-

TY

PIC

AL

PU

LSE

D C

UR

RE

NT

GA

INF

E

- 40 ºC

25 °C

C

V = 5VCE

125 °C

BC

P52




P 8

1 10 100 10000.2

0.4

0.6

0.8

1


-

BA

SE

-EM

ITT

ER

ON

VO

LTA

GE

(V

)B

E(O

N)

125 ºC

- 40 ºC

25 °C

C

V = 5VCE


P 8

25 50 75 100 125 150

0.1

1

10

100


I

- C

OLL

EC

TO

R C

UR

RE

NT

(nA

)

A

V = 40VCB

º

CB

O


P 78

1 10 100 1000

0.4

0.6

0.8

1


V

-

BA

SE

-EM

ITT

ER

VO

LTA

GE

(V

)B

ESA

T

C

ββ = 10

125 ºC

- 40 ºC

25 °C


Pr 78

0 4 8 12 16 20 24 280

10

20

30

40


C

-

CO

LLE

CT

OR

-BA

SE

CA

PA

CIT

AN

CE

(pF

)

CBOB

O

F = 1.0 MHz


1 10 100 10000

50

100

150

200

250


- G

AIN

BA

ND

WID

TH P

RO

DU

CT

(M

Hz)

C

FE

V = 10VCE


0 25 50 75 100 125 1500

0.25

0.5

0.75

1

1.25

1.5

TEMPERATURE ( C)

P

- PO

WE

R D

ISSI

PATI

ON

(W)

D

o

SOT-223

TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BC

P54






BCP54

This device is designed for general purpose medium poweramplifiers and switching circuits requiring collector currentsto 1.2 A. Sourced from Process 38.






BC

C

SOT-223

E

Symbol Characteristic Max UnitsBCP54


1.512

WmW/°C

RθJA Thermal Resistance, Junction to Ambient 83.3 °C/W



BC

P54



OFF CHARACTERISTICS






10010

nAµA




254025

250





0.01 0.1 1 30

0.1

0.2

0.3

0.4

0.5

0.6


-

CO

LLE

CTO

R-E

MIT

TE

R V

OLT

AG

E (

V)

CE

SAT

C

β = 10

125 ºC

- 40 ºC

25°C


0.001 0.01 0.1 1 20

100

200

300

400

500


- T

YP

ICA

L P

ULS

ED

CU

RR

EN

T G

AIN

FE

- 40 ºC

25 °C

C

V = 5VCE

125 °C

BC

P54




P 38

0.001 0.01 0.1 10.2

0.4

0.6

0.8

1


-

BA

SE

-EM

ITT

ER

ON

VO

LTA

GE

(V

)B

E(O

N)

C

V = 5VCE

125 ºC

- 40 ºC

25°C


P

0.001 0.01 0.1 10.2

0.4

0.6

0.8

1


-

BA

SE

-EM

ITT

ER

ON

VO

LTA

GE

(V)

BE

(ON

)

C

V = 5VCE

125 ºC

- 40 ºC

25°C


25 50 75 100 125 150

0.1

1

10

100


I

- C

OLL

EC

TOR

CU

RR

EN

T (

nA)

A

V = 40VCB

º

CB

O


Pr 38

0 4 8 12 16 20 24 280

10

20

30

40


C

-

CO

LLE

CTO

R-B

AS

E C

APA

CIT

AN

CE

(pF

)

CBOB

O


1 10 100 10000

100

200

300

400

500


- G

AIN

BA

ND

WID

TH

PR

OD

UC

T (

MH

z)

C

FE

V = 10VCE


0 25 50 75 100 125 1500

0.25

0.5

0.75

1

1.25

1.5

TEMPERATURE ( C)

P

- P

OW

ER

DIS

SIP

ATIO

N (

W)

D

o

SOT-223

TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BC

V26

PNP Darlington Transistor





BCV26

This device is designed for applications requiring extremely highcurrent gain at currents to 800 mA. Sourced from Process 61.



VEBO Emitter-Base Voltage 10 V



Symbol Characteristic Max Units*BCV26


3502.8

mWmW/°C


C

B

E

SOT-23Mark: FD




BC

V26


OFF CHARACTERISTICS

Symbol Parameter Test C onditions Min Typ Max Units



V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 nA, IC = 0 10 V

ICBO Collector-Cutoff Current VCB = 30 V, IE = 0 0.1 µA

IEBO Emitter-Cutoff Current VEB = 10 V, IC = 0 0.1 µA



4,00010,00020,000

VCE(sat) Collector-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.0 V

VBE(sat) Base-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.5 V


f = 100 MHz220 MHz

CC Collector Capacitance VCB = 30 V, IE = 0, f = 1.0 MHz 3.5 pF

PNP Darlington Transistor(continued)



0.001 0.01 0.1 10

0.4

0.8

1.2

1.6


-

CO

LLE

CTO

R E

MIT

TE

R V

OLT

AG

E (

V)

CCE

SAT

β = 1000

25 °C

- 40 ºC

125 ºC


0.01 0.1 10

10

20

30

40

50


- T

YP

ICA

L P

ULS

ED

CU

RR

EN

T G

AIN

(K

)

C

FE

125 °C

25 °C

- 40 °C

V = 5VCE

BC

V26

PNP Darlington Transistor(continued)



0.001 0.01 0.1 10

0.4

0.8

1.2

1.6

2

I - COLLECTOR CURRENT (A)

V

-

BA

SE

EM

ITT

ER

VO

LTA

GE

(V

)

C

BE

SAT

25 °C

- 40 ºC

125 ºC

β = 1000


0.001 0.01 0.1 10

0.4

0.8

1.2

1.6

2


-

BA

SE

EM

ITT

ER

ON

VO

LTA

GE

(V

)

C

BE

ON

V = 5VCE

25 °C

- 40 ºC

125 ºC


25 50 75 100 1250.01

0.1

1

10

100


I

- C

OLL

EC

TOR

CU

RR

EN

T (

nA)

A

CB

O

º

V = 15VCB

Input and Output Capacitancevs Reverse Bias Voltage

0.1 1 10 1000

4

8

12

16

REVERSE VOLTAGE (V)

CA

PA

CIT

AN

CE

(pF

)

C

f = 1.0 MHz

ib

C ob


0 25 50 75 100 125 1500

50

100

150

200

250

300

350

TEMPERATURE ( C)

P

- P

OW

ER

DIS

SIP

ATIO

N (

mW

)D

o

SOT-23

TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BC

V27

C

B

E

NPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at collector currents to 1.0 A. Sourced fromProcess 05.



NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations


BCV27




VEBO Emitter-Base Voltage 10 V



Symbol Characteristic Max Units*BCV27


3502.8

mWmW/°C


SOT-23Mark: FF




BC

V27


OFF CHARACTERISTICS

Symbol Parameter Test Conditions Min Typ Max Units



V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 nA, IC = 0 10 V

ICBO Collector-Cutoff Current VCB = 30 V, IE = 0 0.1 µA

IEBO Emitter-Cutoff Current VEB = 10 V, IC = 0 0.1 µA



4,00010,00020,000




f = 100 MHz220 MHz

CC Collector Capacitance VCB = 30 V, IE = 0, f = 1.0 MHz 3.5 pF

NPN Darlington Transistor(continued)



0.001 0.01 0.1 10

50

100

150

200

250


- T

YP

ICA

L P

ULS

ED

CU

RR

EN

T G

AIN

(K

)

C

FE

25 °C

125 °C

- 40 °C

V = 5VCE


P 0

1 10 100 10000

0.4

0.8

1.2

1.6


-

CO

LLE

CTO

R E

MIT

TE

R V

OLT

AG

E (

V)

C

CE

SAT

25°C - 40 ºC

125 ºC

ββ = 1000

BC

V27




P 05

1 10 100 10000

0.4

0.8

1.2

1.6

2


V

-

BA

SE

EM

ITT

ER

VO

LTA

GE

(V

)

C

BE

SAT

25 °C

- 40 ºC

125 ºC

ββ = 1000


P 0

1 10 100 10000

0.4

0.8

1.2

1.6

2


-

BA

SE

EM

ITT

ER

ON

VO

LTA

GE

(V

)

C

BE

ON

V = 5VCE

- 40 ºC

25 °C

125 ºC

Collector-Emitter BreakdownVoltage with ResistanceBetween Emitter-Base

0.1 1 10 100 100059.5

60

60.5

61

61.5

62

62.5

RESISTANCE (k )BV

- B

RE

AK

DO

WN

VO

LTAG

E (V

)

ΩΩ

CE

R


P 0

25 50 75 100 1250.01

0.1

1

10

100


I

- C

OLL

EC

TOR

CU

RR

EN

T (n

A)

A

CB

O

º

V = 30VCB

Input and Output Capacitance

vs Reverse Voltage

P 0

0.1 1 10 1002

5

10

20

V - COLLECTOR VOLTAGE(V)

CA

PAC

ITA

NC

E (

pF)

ce

Cib

Cob

f = 1.0 MHz


P 05

1 10 20 50 100 1500

10

20

30

40

50

I - COLLECTOR CURRENT (mA)f -

GAI

N B

AND

WID

TH P

RO

DU

CT

(MH

z)

C

T

V = 5Vce

BC

V27




0 25 50 75 100 125 1500

50

100

150

200

250

300

350

TEMPERATURE ( C)

P

- PO

WE

R D

ISS

IPAT

ION

(mW

)D

o

SOT-23

TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BCW29 PNP EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR


• Refer to KST5088 for graphs



Collector-Base VoltageCollector-Emitter VoltageEmitter-Base VoltageCollector CurrentJunction TemperatureStorage Temperature

VCBO

VCEO

VEBO

ICPC

TSTG

-30 -20 -5.0-100 350 150

VVV

mAmW°C


Collector-Base Breakdown VoltageCollector-Emitter Breakdown VoltageCollector-Emitter Breakdown VoltageEmitter-Base Breakdown VoltageCollector Cut-off CurrentDC Current GainCollector-Emitter Saturation VoltageBase-Emitter On VoltageOutput Capacitance

Noise Figures

BVCBO

BVCEO

BVCES

BVEBO

ICBO

hFE

VCE(sat)VBE(sat)COB

NF

IC= -10µA, IE=0IC= -2mA, IB=0IC= -100µA, VEB=0IE= -10µA, IC=0VCB= -20V, IE=0VCE= -5V, IC= -2mAIC= -10mA, IB= -0.5mAVCE= -5V, IC= -2mAVCB= -10V, IE=0f=1MHzVCE= -5V, IC=0.2mARG=2KΩ, f=1KHz

-30-20-30-5

120

-0.6

-100260-0.3

-0.757

10

VVVVnA

VVpF

dB

SOT-23



Rev. B

TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BC

W30






VCES Collector-Emitter Voltage 32 V





PNP General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 300 mA.Sourced from Process 68. See BC857A for characteristics.


Symbol Characteristic Max Units*BCW30


3502.8

mWmW/°C



BCW30

SOT-23Mark: C2

C

B

E

W30, Rev B

BC

W30



OFF CHARACTERISTICS



V(BR)CEO Collector-Emitter Breakdown Voltage IC = 2.0 mA, IB = 0 32 V

V(BR)CES Collector-Emitter Breakdown Voltage IC = 10 µA, IE = 0 32 V


ICBO Collector-Cutoff Current VCB = 32 V, IE = 0VCB = 32 V, IE = 0, TA = +100 °C

10010

nAµA

ON CHARACTERISTICShFE DC Current Gain VCE = 5.0 V, IC = 2.0 mA 215 500


VBE(on) Base-Emitter On Voltage VCE = 5.0 V, IC = 2.0 mA 0.60 0.75 V

SMALL SIGNAL CHARACTERISTICSNF Noise Figure VCE = 5.0 V, IC = 200 µA,

RS = 2.0 kΩ, f = 1.0 kHz,BW = 200 Hz

10 dB

BCW31 NPN EPITAXIAL SILICON TRANSISTOR


ABSOLUTE MAXIMUM RATINGS (T A=25&)


ELECTRICAL CHARACTERISTICS (T A=25&)


Collector-Base VoltageCollector-Emitter VoltageEmitter-Base VoltageCollector CurrentCollector DissipationStorage Temperature

VCBO

VCEO

VEBO

ICPC

TSTG

30 20 5100350150

VVV

mAmW&


Collector-Base Breakdown VoltageCollector-Emitter Breakdown VoltageEmitter-Base Breakdown VoltageDC Current GainCollector-Emitter Saturation VoltageBase-Emitter On VoltageOutput Capacitance

Noise Figures

BVCBO

BVCEO

BVEBO

hFE

VCE (sat)VBE (on)COB

NF

IC=10, IE=0IC=2mA, IB=0IE=10, IC=0VCE=5V, IC=2mAIC=10mA, IB=0.5mAVCE=5V, IC=2mAVCB=10V, IE=0f=1MHzVCE=5V, IC=0.2mARG=2, f=1KHz

30205

110

0.55

2200.250.7

4

10

VVV

VVpF

dB

SOT-23


©1999 Fairchild Semiconductor Corporation

Rev. B

TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


UHC™VCX™

BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR




MARKING CODE



VCBO

VCEO

VEBO

ICPC

TSTG

32325

100350150

VVV

mAmW°C

Characteristic Symbol Test Conditions Min Max Unit

Collector-Emitter Breakdown VoltageEmitter-Base Breakdown VoltageCollector Cut-off CurrentEmitter Cut-off CurrentDC Current Gain

: BCW60B: BCW60C: BCW60D: BCW60A: BCW60B: BCW60C: BCW60D: BCW60A: BCW60B: BCW60C: BCW60D

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter On VoltageOutput Capacitance

Current Gain-Bandwidth Product

Noise Figure

Turn On TimeTurn Off Time

BVCEO

BVEBO

ICES

IEBO

hFE

VCE(sat)

VBE(sat)

VBE(sat)COB

fT

NF

tON

tOFF

IC=2mA, IB=0IE=1µA, IC=0VCB=32V, VBE=0VEB=4V, IC=0

VCE=5V, IC=10µA

VCE=5V, IC=2mA

VCE=1V, IC=50mA

IC=50mA, IB=1.25mAIC=10mA, IB=0.25mAIC=50mA, IB=1.25mAIC=10mA, IB=0.25mAVCE=5V, IC=2mAVCB=10V, IE=0f=1MHzIC=10mA, VCE=5V

IC=0.2mA, VCE=5VRG=2KΩ, f=1KHzIC=10mA, IB1=1mAVBB=3.6V, IB2=1mAR1=R2=5KΩ,RL=990Ω

325

2040

100120180250380607090

100

0.70.6

0.55

125

2020

220310460630

0.550.351.050.850.754.5

6

150800

VVnAnA

VVVVVpF

MHz

dB

nsns

TYPE BCW60A BCW60B BCW60C BCW60D

MARK. AA AB AC AD

SOT-23



Rev. B

TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR



• Refer to KS5086 for graphs



Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

VCBO

VCEO

VEBO

IC PC

TSTG

-32-32-5.0-100350

-55 ~ 150

VVV

mAmW°C


Collector-Emitter Breakdown VoltageEmitter-Base Breakdown VoltageCollector Cut-off CurrentDC Current Gain

: BCW61B: BCW61C: BCW61D: BCW61A: BCW61B: BCW61C: BCW61D: BCW61A: BCW61B: BCW61C: BCW61D



Base-Emitter On VoltageOutput Capacitance

Noise Figure


BVCEO

BVEBO

ICES

hFE

VCE (sat)

VBE (sat)

VBE (on)COB

NF

tON

tOFF

IC= -2mA, IB=0IE= -1µA, IC=0VCB= -32V, VBE=0

VCE= -5V, IC= -10µA

VCE= -5V, IC= -2mA

VCE= -5V, IC= -50mA

IC= -50mA, IB= -1.25mAIC= -10mA, IB= -0.25mAIC= -50mA, IB= -1.25mAIC= -10mA, IB= -0.25mAVCE= -5V, IC= -2mAVCB= -10V, IE=0f=1MHzIC= -0.2mA, VCE= -5VRG=20KΩ, f=1KHzIC= -10mA, IB1= -1mAVBB= -3.6V, IB2= -1mAR1=R2=50KΩ, RL=990Ω

-32-5

2040

1001201402503806080

100100

0.680.60.6

-20

220310460630

-0.55-0.251.050.850.75

6

6

150800

VVnA

VVVVVpF

dB

nsns

SOT-23



Rev. B

BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR

MARKING CODE

TYPE BCW61A BCW61B BCW61C BCW61D

MARK. BA BB BC BD

TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BC

W65C

BCW65C


This device is designed for general purpose amplifier applicationsat collector currents to 500 mA. Sourced from Process 19.

C

E

BSOT-23Mark: ED










Symbol Characteristic Max Units*BCW65C


3502.8

mWmW/°C





BC

W65C

OFF CHARACTERISTICSV(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 32 V



ICES Collector-Cutoff Current VCB = 32 V, IE = 0VCB = 32 V, IE = 0, TA = 150°C

2020

nAµA

IEBO Emitter-Cutoff Current VEB = 4.0 V, IC = 0 20 nA



ON CHARACTERISTICShFE DC Current Gain IC = 100 µA, VCE = 10 V

IC = 10 mA, VCE = 1.0 VIC = 100 mA, VCE = 1.0 VIC = 500 mA, VCE = 2.0 V

8018025050

630

VCE(sat) Collector-Emitter Saturation Voltage IC = 100 mA, IB = 10 mAIC = 500 mA, B = 50 mA

0.30.7

V

VBE(sat) Base-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 2.0 V

SMALL SIGNAL CHARACTERISTICSfT Current Gain - Bandwidth Product IC = 20 mA, VCE = 10 V,

f = 100 MHz100 MHz

Cobo Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 12 pF

Cibo Input Capacitance VEB = 0.5 V, IC = 0, f = 1.0 MHz 80 pF

NF Noise Figure IC = 0.2 mA, VCE = 5.0,RS = 1.0 kΩ, f = 1.0 kHz,BW = 200 Hz

10 dB




1 10 100 500

0.1

0.2

0.3

0.4


-

CO

LLE

CT

OR

-EM

ITT

ER

VO

LTA

GE

(V

)C

ES

AT

25 °C

C

β = 10

125 °C

- 40 °C


0.1 0.3 1 3 10 30 100 3000

100

200

300

400

500


- T

YP

ICA

L P

ULS

ED

CU

RR

EN

T G

AIN

C

FE

125 °C

25 °C

- 40 °C

V = 5VCE

BC

W65C




0.1 1 10 250.2

0.4

0.6

0.8

1


-

BA

SE

-EM

ITT

ER

ON

VO

LTA

GE

(V

)B

E(O

N)

C

V = 5VCE

25 °C

125 °C

- 40 °C


1 10 100 500

0.4

0.6

0.8

1


V

-

BA

SE

-EM

ITT

ER

VO

LTA

GE

(V

)B

ES

AT

C

β = 10

25 °C

125 °C

- 40 °C


25 50 75 100 125 150

0.1

1

10

100

500


I

- C

OLL

EC

TOR

CU

RR

EN

T (

nA)

A

V = 40VCB

CB

O

°

Emitter Transition and OutputCapacitance vs Reverse Bias Voltage

0.1 1 10 100

4

8

12

16

20

REVERSE BIAS VOLTAGE (V)

CA

PA

CIT

AN

CE

(pF

)

f = 1 MHz

C ob

C te


0 25 50 75 100 125 1500

50

100

150

200

250

300

350

TEMPERATURE ( C)

P

- P

OW

ER

DIS

SIP

ATIO

N (

mW

)D

o

SOT-23

TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BC

W68G

BCW68G


This device is designed for general purpose amplifier and switchingapplications at currents to 500 mA. Sourced from Process 63.

Symbol Characteristic Max Units*BCW68C


3502.8

mWmW/°C


C

E

BSOT-23Mark: DG













BC

W68G


OFF CHARACTERISTICSV(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 45 V

V(BR)CES Collector-Base Breakdown Voltage IC = 10 µA 60 V



ICES Collector-Cutoff Current VCE = 45 VVCE = 45 V, TA = 150 °C

2010

nAµA

IEBO Emitter-Cutoff Current VEB = 4.0 V 20 nA

ON CHARACTERISTICShFE DC Current Gain IC = 10 mA, VCE = 1.0 V


12016060

400


VBE(sat) Base-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 2.0 V

SMALL SIGNAL CHARACTERISTICSfT Current Gain - Bandwidth Product IC = 20 mA, VCE = 10 V,

f = 100 MHz100 MHz

Cobo Ouput Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 18 pF

Cibo Input Capacitance VEB = 0.5 V, IE = 0, f = 1.0 MHz 105 pF

NF Noise Figure IC = 0.2 mA V, VCE = 5.0 V,RS = 1.0 kΩ, f = 1.0 kHz,BW = 200 Hz

10 dB





0.1 0.3 1 3 10 30 100 3000

100

200

300

400

500


h

- T

YP

ICA

L P

ULS

ED

CU

RR

EN

T G

AIN

C

FE

125 °C

25 °C

- 40 °C

V = 5VCE


1 10 100 5000

0.1

0.2

0.3

0.4

0.5


-

CO

LLE

CTO

R E

MIT

TE

R V

OLT

AG

E (

V)

CCE

SAT

β = 10

25 °C

- 40 ºC125 ºC

BC

W68G




1 10 100 5000

0.2

0.4

0.6

0.8

1


V

-

BA

SE

EM

ITT

ER

VO

LTA

GE

(V

)

C

BE

SAT

25 °C- 40 ºC

125 ºC

β = 10


0.1 1 10 250

0.2

0.4

0.6

0.8

1


-

BA

SE

EM

ITT

ER

ON

VO

LTA

GE

(V

)

C

BE

ON

V = 5VCE

25 °C

- 40 ºC

125 ºC


25 50 75 100 1250.01

0.1

1

10

100


I

- C

OLL

EC

TOR

CU

RR

EN

T (

nA)

A

CB

O

º

V = 35VCB

Input and Output Capacitancevs Reverse Bias Voltage

0.1 1 10 500

4

8

12

16

20

REVERSE BIAS VOLTAGE (V)

CA

PA

CIT

AN

CE

(pF

)

C ob

C ib


0 25 50 75 100 125 1500

50

100

150

200

250

300

350

TEMPERATURE ( C)

P

- P

OW

ER

DIS

SIP

ATIO

N (

mW

)D

o

SOT-23

TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BCW71 NPN EPITAXIAL SILICON TRANSISTOR







VCBO

VCEO

VEBO

ICPC

TSTG

50455

100350150

VVV

mAmW°C


Collector-Base Breakdown VoltageCollector-Emitter Breakdown VoltageCollector-Emitter Breakdown VoltageEmitter-Base Breakdown VoltageCollector Cut-off CurrentDC Current Gain


Base-Emitter Saturation VoltageBase-Emitter On Voltage


Output Capacitance

Noise Figures

BVCBO

BVCEO

BVCES

BVEBO

ICBO

hFE

VCE (sat)

VBE (sat)VBE (on)

fT

COB

NF

IC=10µA, IE=0IC=2mA, IB=0IC=2mA, VEB=0IE=10µA, IC=0VCB=20V, IE=0VCE=5V, IC=2mAIC=10mA, IB=0.5mAIC=50mA, IB=2.5mAIC=50mA, IB=2.5mAIC=2mA, VCE=5VVCE=5V, IC=10mAf=35MHzVCB=10V, IE=0f=1MHzVCE=5V, IC=2.0mARG=2KΩ, f=1KHz

5045455

110

0.6

0.210.85

300

100220

0.25

0.75

410

VVVVnA

VVVV

MHz

pF

dB

SOT-23



Rev. B

TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BCX70G NPN EPITAXIAL SILICON TRANSISTOR







VCBO

VCEO

VEBO

IC PC

TSTG

45455

200350150

VVV

mAmW°C





Base-Emitter On VoltageCurrent Gain Bandwidth Product

Output Capacitance

Noise Figure


BVCEO

BVEBO

ICES

IEBO

hFE

VCE (sat)

VBE (sat)

VBE (on)fT

COB

NF

TON

TOFF

IC=2mA, IB=0IE=1µA, IC=0VCE=32V, VBE=0VEB=4V, IC=0VCE=5V, IC=2mAVCE=1V, IC=50mAIC=10mA, IB=0.25mAIC=50mA, IB=1.25mAIC=10mA, IB=0.25mAIC=50mA, IB=1.25mAIC=2mA, VCE=5VVCE=5V, IC=10mA

VCB=10V, IE=0f=1MHzIC=0.2mA, VCE=5Vf=1KHz, RS=2KΩIC=10mA, IB1=1mAIB2=1mA, VBB=3.6VRL=990Ω R1=R2=5KΩ

455

12060

0.60.7

0.55125

2020

220

0.350.550.851.050.75

4.5

6

150800

VVnAnA

VVVVV

MHz

pF

dB

nsns

SOT-23



Rev. B

TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BCX70H NPN EPITAXIAL SILICON TRANSISTOR







VCBO

VCEO

VEBO

IC PC

TSTG

45455

200350150

VVV

mAmW°C






Output Capacitance

Noise Figure


BVCEO

BVEBO

ICES

IEBO

hFE

VCE (sat)

VBE (sat)

VBE (on)fT

COB

NF

TON

TOFF

IC=2.0mA, IB=0IE=1.0µA, IC=0VCE=32V, VBE=0VEB=4V, IC=0VCE=5V, IC=10µAVCE=5V, IC=2.0mAVCE=1V, IC=50mAIC=10mA, IB=0.25mAIC=50mA, IB=1.25mAIC=10mA, IB=0.25mAIC=50mA, IB=1.25mAIC=2.0mA, VCE=5VIC=10mA, VCE=5V

VCE=10V, IE=0f=1MHzVCE=5V, IC=0.2mARS=2KΩ, f=1KHzIC=10mA, IB1=1.0mAVBB=3.6V, IB2=1.0mAR1=R2=5KΩ, RL=990Ω

455

12018070

0.60.7

0.55125

2020

310

0.350.550.851.050.75

4.5

6

150800

VVnAnA

VVVVV

MHz

pF

dB

nsns

SOT-23



Rev. B

TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BCX70J NPN EPITAXIAL SILICON TRANSISTOR







VCBO

VCEO

VEBO

IC PC

TSTG

45455

200350150

VVV

mAmW°C






Output Capacitance

Noise Figure


BVCEO

BVEBO

ICES

IEBO

hFE

VCE (sat)

VBE (sat)

VBE (on)fT

COB

NF

TON

TOFF


VCB=10V, IE=0f=1MHzVCE=5V, IC=0.2mARS=2KΩ, f=1KHzIC=10mA, IB1=1.0mAVBB=3.6V, IB2=1.0mAR1=R2=5KΩ, RL=990Ω

455

4025090

0.60.7

0.55125

2020

460

0.350.550.851.050.75

4.5

6

150800

VVnAnA

VVVVV

MHz

pF

dB

nsns

SOT-23



Rev. B

TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BCX70K NPN EPITAXIAL SILICON TRANSISTOR







VCBO

VCEO

VEBO

IC PC

TSTG

45455

200350150

VVV

mAmW°C






Output Capacitance

Noise Figure


BVCEO

BVEBO

ICES

IEBO

hFE

VCE (sat)

VBE (sat)

VBE (on)fT

COB

NF

TON

TOFF


VCB=10V, IE=0f=1MHzVCE=5V, IC=0.2mARS=2KΩ, f=1KHzIC=10mA, IB1=1.0mAVBB=3.6V, IB2=1.0mAR1=R2=5KΩ, RL=990Ω

455

100380100

0.60.7

0.55125

2020

630

0.350.550.851.050.75

4.5

6

150800

VVnAnA

VVVVV

MHz

pF

dB

nsns

SOT-23



Rev. B

TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BCX71G PNP EPITAXIAL SILICON TRANSISTOR







VCBO

VCEO

VEBO

IC PC

TSTG

-45-45-5.0-100350150

VVV

mAmW°C






Noise Figure


BVCEO

BVEBO

ICES

hFE

VCE (sat)

VBE (sat)

VBE (on)COB

NF

TON

TOFF

IC= -2mA, IB=0IE= -1µA, IC=0VCE= -32V, VBE=0VEB= -5V, IC= -2mAVCE= -1V, IC= -50µAIC= -10mA, IB= -0.25mAIC= -50mA, IB= -1.25mAIC= -10mA, IB= -0.25mAIC= -50mA, IB= -1.25mAIC= -2mA, VCE= -5VVCB= -10V, IE=0f=1MHzIC=0.2mA, VCE=5VRS=2KΩ, f=1KHzIC= -10mA, IB1= -1mAIB2= -1mA, VBB=3.6VRL=990Ω

-45-5

12060

-0.6-0.68-0.6

-20220

-0.25-0.55-0.85-1.05-0.75

6

6

150800

VVnA

VVVVVpF

dB

nsns

SOT-23



Rev. B

TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BCX71H PNP EPITAXIAL SILICON TRANSISTOR







VCBO

VCEO

VEBO

ICPC

TSTG

-45-45-5

-100350150

VVV

mAmW°C






Noise Figure


BVCEO

BVEBO

ICES

hFE

VCE (sat)

VBE (sat)

VBE (on)COB

NF

TON

TOFF

IC= -2mA, IB=0IE= -1µA, IC=0VCE= -32V, VBE=0VCE= -5V, IC= -10µAVCE= -5V, IC= -2mAVCE= -1V, IC= -50mAIC= -10mA, IB= -0.25mAIC= -50mA, IB= -1.25mAIC= -10mA, IB= -0.25mAIC= -50mA, IB= -1.25mAIC= -2mA, VCE= -5VVCB= -10V, IE=0f=1MHzIC= -0.2mA, VCE= -5Vf=1KHz, RS=2KΩIC= -10mA, IB1= -1mAIB2= -1mA, VBB= -3.6VRL=990Ω

-45-5

3014080

-0.6-0.68-0.6

-20

310

-0.25-0.55-0.85-1.05-0.75

6

6

150800

VVnA

VVVVVpF

dB

nsns

SOT-23



Rev. B

TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BCX71J PNP EPITAXIAL SILICON TRANSISTOR







VCBO

VCEO

VEBO

IC PC

TSTG

-45-45-5

-100350150

VVV

mAmW°C






Noise Figure


BVCEO

BVEBO

ICES

hFE

VCE (sat)

VBE (sat)

VDE (on)COB

NF

TON

TOFF

IC= -2mA, IB=0IE= -1µA, IC=0VCE= -32V, VBE=0VCE= -5V, IC= -10µAVCE= -5V, IC= -2mAVCE= -1V, IC= -50mAIC= -10mA, IB= -0.25mAIC= -50mA, IB= -1.25mAIC= -10mA, IB= -0.25mAIC= -50mA, IB= -1.25mAIC= -2mA, VCE= -5VVCB= -10V, IE=0f=1MHzIC= -0.2mA, VCE= -5Vf=1KHz, RS=2KΩIC= -10mA, IB1= -1mAIB2= -1mA, VBB= -3.6VRL=990Ω

-45-5

40250100

-0.6-0.68-0.6

-20

460

-0.25-0.55-0.85-1.05-0.75

6

6

150800

VVnA

VVVVVpF

dB

nsns

SOT-23



Rev. B

TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BCX71K PNP EPITAXIAL SILICON TRANSISTOR







VCBO

VCEO

VEBO

IC PC

TSTG

-45-45-5.0-100350150

VVV

mAmW°C






Noise Figure


BVCEO

BVEBO

ICES

hFE

VCE (sat)

VBE (sat)

VBE (on)COB

NF

TON

TOFF

IC= -2mA, IB=0IE= -1µA, IC=0VCE= -32V, VBE=0VCE= -5V, IC= -10µAVCE= -5V, IC= -2mAVCE= -1V, IC= -50mAIC= -10mA, IB= -0.25mAIC= -50mA, IB= -1.25mAIC= -10mA, IB= -0.25mAIC= -50mA, IB= -1.25mAIC= -2mA, VCE= -5VVCB= -10V, IE=0f=1MHzIC= -0.2mA, VCE= -5VRS=2KΩ, f=1KHzIC= -10mA, IB1= -1mAIB2= -1mA, VBB= -3.6VRL=990Ω

-45-5

100380110

-0.6-0.68-0.6

-20

630

-0.25-0.55-0.85-1.05-0.75

6

6

150800

VVnA

VVVVVpF

dB

nsns

SOT-23



Rev. B

TRADEMARKS





LIFE SUPPORT POLICY






Definition of Terms


Advance Information

Preliminary


Obsolete






First Production

Full Production

Not In Production

DISCLAIMER


BC

X79



BCX79

This device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourced fromProcess 68. See PN200A for characteristics.










Symbol Characteristic Max UnitsBCX79


6255.0

mWmW/°C



EB C

TO-92


BC

X79



OFF CHARACTERISTICS



V(BR)EBO Emitter-Base Breakdown Voltage IE = 1.0 µA, IC = 0 5.0 V

ICEX Collector Cutoff Current VCE = 45 V, VBE = 0.2 V,TA = +100 °C

20 µA

ICES Collector Cutoff Current VCE = 45 V, IE = 0,VCE = 45 V, IE = 0, TA = +125 °C

102.5

nAµA

IEBO Emitter Cutoff Current VEB = 4.0 V, IC = 0 20 nA

ON CHARACTERISTICShFE DC Current Gain VCE = 5.0 V, IC = 2.0 mA

VCE = 1.0 V, IC = 10 mAVCE = 1.0 V, IC = 100 mA

1208040

6301,000



VBE(on) Base-Emitter On Voltage VCE = 5.0 V, IC = 2.0 mAVCE = 1.0 V, IC = 100 mA

0.6 0.70.9

VV

SMALL SIGNAL CHARACTERISTICSCcb Collector-Base Capacitance VCB = 10 V, f = 1.0 MHz 4.5 pF

Ceb Emitter-Base Capacitance VEB = 0.5 V, f = 1.0 MHz 15 pF

hie Input Impedance IC = 2.0 mA, VCE = 5.0 V,f = 1.0 kHz

1.6 8.5 kΩ

hoe Output Admittance IC = 2.0 mA, VCE = 5.0 V,f = 1.0 kHz

100 µmhos

NF Noise Figure VCE = 5.0 V, IC = 0.2 mA,RS = 2.0 kΩ, f = 1.0 kHz

6.0 dB

SWITCHING CHARACTERISTICSton Turn-on Time VCC = 10 V, IC = 10 mA,

VBB = 3.6 V, IB1 = IB2 = 1.0 mA150 ns

ton Turn-on Time VCC = 10 V, IC = 100 mA,VBB = 5.0 V, IB1 = IB2 = 10 mA

150 ns

toff Turn-off Time VCC = 10 V, IC = 10 mA,VBB = 3.6 V, IB1 = IB2 = 1.0 mA

800 ns

toff Turn-off Time VCC = 10 V, IC = 100 mA,VBB = 5.0 V, IB1 = IB2 = 10 mA

800 ns

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Index of /ds/BC/ - Elisa Ideatmirian77/d/bc.pdfbc237/238/ 239 npn epitaxial silicon transistor switching and amplifier applications • low noise: bc239 absolute maximum ratings (t