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IeMRC Flagship Project:IeMRC Flagship Project: Power ElectronicsPower Electronics
OverviewOverview
•
Introduction to power electronics•
Overview of IeMRC activities in power electronics
•
Flagship project in power electronics•
Industrial perspective
•
Summary
What Does Power Electronics Do?What Does Power Electronics Do?
Efficient, flexible control and conversion of electrical energy
AC DC
DCAC
•
Typically involves change of voltage level and/or frequency•
Characterised by 4 processes
AC sources: single phase or three phase AC e.g. from AC generators
DC sources: batteries, solar panel, power supply output
Rectification
Inversion
AC-AC conversion
DC loads: electrical/electronic circuits, machines, industrial processes
AC loads: machines, industrial processes, power transmission and distribution systems
DC-DC conversion
Why Power Electronics?Why Power Electronics?
Enabling technology throughout the energy supply chain
Primary energy extraction &
transport
Energy conversion & concentration
Energy transmission
and distribution
Energy delivery
Electricity39%
Transport21%
Other40%
IT14%
Lighting19%
HVAC16%
Motion51%
Heat
Work
~16,000 TWh/annum global electricity
Benefits of Power ElectronicsBenefits of Power Electronics
•
Energy saving •
Cost and space saving
•
Reduced maintenance•
Improved reliability
Sustainability Supply security
Energy Efficiency
Productivity Quality of life
•
Longer life•
Better performance
•
Better control•
Flexibility
•
Low environmental impact
Power Electronics ApplicationsPower Electronics Applications
1 cm1 W
200 m2 GW
Power
electronics
inside
What is Driving Future Power Electronics?What is Driving Future Power Electronics?
•
Electrical power increasingly adopted as an energy delivery medium: emission free at point of use–
Transport applications: rail traction, automotive (HEV and EV) and aerospace electronic systems
–
High efficiency electric drives in industrial applications and HVAC
•
Increased use of power electronics in transmission and distribution systems–
Renewable energy sources (PV, wind, wave etc.) require power electronics based interfaces
–
Distributed generation requires control based on power electronics
•
Lightweight, efficient, high performance products such as mobile computing, home entertainment and power tools
•
Power electronics holds the key to projected annual global energy savings of around 1000 TWh or 1 G tonne CO2 by 2020: equivalent to 50 large coal-fired power stations
Common ThemesCommon Themes
•
Increased power densities•
Lower electromagnetic emissions
•
Extreme operating environments
•
Plug-and-go systems•
Higher levels of integration
•
Lower cost
Why Manufacture Power Electronics Why Manufacture Power Electronics in the UK?in the UK?
•
UK based technology and manufacturing capability is currently relatively strong
•
UK is internationally competitive across the whole supply chain
•
Many systems are application specific, highly customised and tend to have a relatively high added value
•
Suited to a technologically advanced manufacturing base and can absorb the relatively high UK labour costs
WhatWhat’’s in a Power Electronic System?s in a Power Electronic System?
SA+
SA-
DA+
DA-
PA
600
V
CDC20μF, 1000V
PB
PC
Half-bridge sandwich (one per phase)
GDUA GDUB GDUC
DC+
DC-
Passive components
Gate drives and control
Power semiconductor
module
Thermal management
Power Electronic Performance LimitationsPower Electronic Performance Limitations
•
Packaging–
Thermal cycling (reliability)
–
Power density (thermal management, reliability)–
Environmental (extreme environments)
•
Passive devices–
Capacitors have limited temperature range (electrolytic ~105°C, ceramic ~150°C)
•
Semiconductor devices–
Silicon max. power device die temperatures from 125°C to 200°C
IeMRC Projects in Power ElectronicsIeMRC Projects in Power Electronics
Aim:Enhance competitiveness of the UK power electronics industry through improvements to the design and manufacturing capability for high power density systems and in particular those intended for high reliability applications and challenging environments.
Technology Drivers
Technology Limiters
Technology Opportunities
Market/customer Aspirations
Research & Development Requirements
IeMRC Power Electronics ClusterIeMRC Power Electronics Cluster
Design for qualification
Advanced packaging
Flagship Project
DTI-funded research into improved bonding technology (IMPECT & NEWTON)
EPSRC-funded research in SiC: Platform grant & responsive mode
DTI-funded programmes in power electronics (TULIP & PEATE)
Power electronics roadmap
DTI-funded research into modelling of power modules (MPM)
Other IeMRC projects onAdvanced Capacitors, Prognostics & Diagnostics
EU-funded research within MOET project
Reliability and Physics of Failure
IeMRC SiP Design
EPSRC Grand Challenge:
3-D Mintegration
Cluster approach maximises gearing and mutual coupling between projects
Flagship Project in Power ElectronicsFlagship Project in Power Electronics
•
Investigate technologies and techniques to improve power module performance–
Road mapping
–
Reliability (understanding, physics of failure models for components, interconnect etc.)
–
Partial discharge effects in power electronics–
Thermal management (enhanced passive and active methods)
–
Advanced materials and assembly methods–
Capacitor technologies
•
Programme started 1st July 2005•
Duration 42 months
•
Total IeMRC funding £811 k, 5 directly-funded academic partners, 11 industrial partners
Academic PartnersAcademic Partners
power electronics, module design and failure analysis
point analysis tools, physics-of- failure reliability predictions, multi-physics modelling and numerical optimisation
partial discharge effects high-permittivity
dielectrics and Silicon Carbide device fabrication
heat transfer and thermal management
metallography and microscopy
wire bonding
Industrial PartnersIndustrial Partners
•
Dynex Semiconductor•
Goodrich
•
International Rectifier•
Morgan Technical Ceramics
•
QinetiQ•
Raytheon Systems
•
Rolls-Royce•
SELEX
•
Semelab•
SR-Drives
•
TRW Automotive
Road MappingRoad Mapping
Road MappingRoad Mapping•
Experience gained and techniques for data capture developed and refined
•
Face to face meetings are good for engaging attention and maximising return on time invested
•
On-line meetings/surveys potentially useful but forms etc. must be carefully designed
•
General data collection templates offer greatest flexibility but encounter greatest user resistance–
Big differences between user interaction with “paper” and “computer-based” implementations
•
Structured questionnaires useful for known issues/topics but poor at collecting “strategic” thoughts
•
Leaving people to complete “in their own time” does not work well:–
Always something more important to do!
–
Need to assess “company confidential” information
Road Mapping Workshop 31Road Mapping Workshop 31stst OctoberOctober
•
Joint event by Electronics Enabled Products KTN and IeMRC•
To be held 31st October 2007 at PERA, Melton Mowbray
•
Theme is “Power Electronics: Energy Management for the 21st Century”
•
Aim is to identify barriers and limitations in current technologies and provide priorities for future work.
•
Internally, the EEP KTN and IeMRC will use the output from the roadmap to:–
Provide input into other technology strategy documents.
–
Help define Technology Watch reports–
Guide the technical areas supported by EPSRC Industrial CASE and other studentship allocations.
–
Define call areas for SPARK awards.•
Externally, we will present these challenges as the voice from our community and to stimulate support measures for them from the Technology Strategy Board and the Research Councils.
Reliability and Physics of FailureReliability and Physics of Failure
Power Electronic ModulesPower Electronic Modules
•
Physical containment for one or more basic component building blocks e.g. semiconductor dies, resistors, (capacitors, inductors)
•
Can include control and protection functions•
Protection from environment e.g. ingress of liquids, dust etc.
•
Circuit interconnections (internal and external)•
Electromagnetic management – EMC issues
•
Thermal Management
Semiconductor dies
Passive components
Power Module
HeatsinkThermal GreaseCopper baseplate
Anatomy of Typical Package and Anatomy of Typical Package and HeatsinkHeatsink
SolderDirect bonded copperCeramicDirect bonded copper
Lead-out interconnect
SolderDieBond wire
EncapsulationHousing
Thermal stack has 9 layers, 8 interfaces!
Thermal Cycling LimitationsThermal Cycling Limitations
Copper baseplateSolderDirect bonded copperCeramicDirect bonded copperSolderDieBond wire
CTE mismatch causes fatigue failure (de-bonding) at heel
CTE mismatch causes fatigue failure at interfaces
Repeated heating and cooling of assembly leads to repetitive mechanical stress and eventual failure
•
Combined Modelling and Accelerated Life Testing carried out by academic and industrial partners
•
Identify Root Cause (Physics) of Failures•
Develop Physics of Failure models
•
Apply validated models to–
assess design options (MPM project)
–
prognostics and health management (IeMRC prognostics and diagnostics project)
Reliability and Physics of FailureReliability and Physics of Failure
0.1
1.0
10.0
100.0
1000.0
10000.0
10 100 1000
delta T (K)
Thou
sand
s of
Cyc
les
0
500
1000
1500
2000
2500
3000
3500
4000
num
ber o
f cyc
les
to fa
ilure
1 2 3 4 5 6 7 8 9 10 11
substrate tile number
-60 to 150 C air-to-air
-60 to 150 C
No failure
K
ref
M
refref T
TTTNN
−−
⎟⎟⎠
⎞⎜⎜⎝
⎛
ΔΔ
⎟⎟⎠
⎞⎜⎜⎝
⎛= 11
1
Experimental Reliability ProgrammeExperimental Reliability ProgrammeReliability issue Coupon designations
Die issues high temp metallization,metal stack
Wire bond lift-off through thermal cycling, corrosion
W1, W2, W3, W4, W5, W6, W7, W8, W9, W10, H1
Solder die attach high temp failure, thermal cyclingincreased Rth
W1, S1, S2
Substrate Thermal cycling, delamination, cracking
T1, T2, T3
Partial discharge Substrate, encapsulation, frequency dependence
Housing plastic degradation
Encapsulation temperaturemoisture
Substrate mount down Thermal cycling, increased Rth M1Bus-bars thermal cycling B1Baseplate-heatsink degradation in Rth
Whole module plus decoupling caps
bench-marking of different modules types
•
Huge number of experiments required•
Time and resource hungry
Wire bond reliabilityWire bond reliability
•
Large number of experiments underway–
Standard production using 2 types of wire and 4 thermal cycling ranges (different ΔT and mean T)
–
Enhanced bonding concepts (see poster from Wei-Sun Loh):
•
High temperature bonding•
Post annealing
•
Effect of overlayer
metal thickness•
Ribbon bonding
•
Resistance to thermal cycling is main concern•
Gather data to guide physics of failure model
•
Assessment by bond shear strength and cross- sectional analysis including micro-structure (see poster from Simon Hogg)
High Temperature WearHigh Temperature Wear--OutOut
•
Conventional models (e.g. Coffin Manson) predict reduced life with increased mean temperature and temperature range
•
Experimental results show that higher ΔT does not always give reduced life
•
Fastest degradation for lowest maximum temperature •
Evidence of annealing at highest temperatures?
•
Further cycling and microstructural studies ongoing
min max delta mean
-55 125 180 35
-35 145 180 55
-40 190 230 75
-60 170 230 55
0
500
1000
1500
2000
2500
0 100 200 300 400 500 600
49s -55+125
49s -35+145
49s -40+190
49s -60+170
K
ref
M
refref T
TTTNN
−−
⎟⎟⎠
⎞⎜⎜⎝
⎛
ΔΔ
⎟⎟⎠
⎞⎜⎜⎝
⎛= 11
1
High ΔT
Low ΔT
05 September 2007 The 2nd Annual IeMRC Conference
Physics of Failure - Greenwich
05 September 2007 The 2nd Annual IeMRC Conference
#1: Wire Bond Interconnect Design
Al-wire
Si
Al metallization
•
Al layer thickness:–
ranges from 5 to 25μm
•
Thermally Cycled•
Stress concentrated at interface
Stress distribution Plastic Strain distribution
05 September 2007 The 2nd Annual IeMRC Conference
Al thickness 5 10 15 25
Plastic strain 0.044 0.035 0.032 0.029
0.025
0.027
0.029
0.031
0.033
0.035
0.037
0.039
0.041
0.043
0.045
5 10 15 25
Al thickness
plas
tic s
train
Strain distribution. Al thickness=5μm
Al thickness has a significant effect on the plastic strain in Al metallization.
#1: Wire Bond Interconnect DesignImpact of Al Metallisation thickness on Damage
05 September 2007 The 2nd Annual IeMRC Conference
#2: The Effect of Dimples on the Isolation Substrate Reliability
Curamik Test Results
W/WO Dimples
05 September 2007 The 2nd Annual IeMRC Conference
#2: The Effect of Dimples on the Isolation Substrate Reliability
Cu thickness(T2) 0.3
AlN thickness(T1) 0.25
Dimple depth 0.24
Pitch 0.45
tile dimension 7.8x3.3
Edge distance (E) 0.5
dimensions
•
Single conductor on top side•
Stresses Analysis –
With Dimples
–
Without Dimples•
Impact on Reliability
Dimple shape
Symmetry leads to ¼
model Thermal load dT=230°C
The mesh
05 September 2007 The 2nd Annual IeMRC Conference
#2: The Effect of Dimples on the Isolation Substrate Reliability
With Dimples
No dimple
Average in a 40μm layer of ceramic
Maximum absolute stress value decreased by about 20%
05 September 2007 The 2nd Annual IeMRC Conference
Solder Joints Lifetime Prediction•
Solder joint failure is one the major failure mechanisms
•
Three types of solder joints are investigated–
A: Substrate solder joint
–
B: Chip mount-down solder joint–
C: Busbar
solder joint
B
A
C
05 September 2007 The 2nd Annual IeMRC Conference
Lifetime Model for Solder Interconnect
•
Solder joints are thermal cycled–
crack length L after N cycles
•
Experiments–
Different solder joint geometry + Load Profiles give different L/N values
•
Simulations–
Run under the same conditions
–
Predict Plastic strain per cycle ∆εp
.•
Lifetime Model
( )bpL
L aN
ε= Δ
crack
Cycles NCra
ck le
ngth
L Test 1 Test 2
Test N
Test i
Test NoD
amag
e ∆ε
p
Test 1
Test 2Test i
Test N
Lifetime model
L is in mm
Calculate L
LN
05 September 2007 The 2nd Annual IeMRC Conference
Lifetime Model of SnAg Solder
( )1.0230.00562 p
L
LN
ε= Δ
•
By using the experimental lifetime data and the modelled damage distribution under the same test conditions, an empirical
lifetime model can be derived.
This model has been used in railway traction control lifetime prediction
05 September 2007 The 2nd Annual IeMRC Conference
Railway Traction Control Application
•
Extreme conditions–
Temperature Moisture
–
Vibration High power
05 September 2007 The 2nd Annual IeMRC Conference
Traction Control Mission Profiles
Status Tmin Tmax Cycles/day
Shed stops -40°C +80°C 1
Station Stops +80°C +100°C 1080
Cruise +80°C +81°C 6E6
Status Tmin Tmax Cycles/day
Shed stops -40°C +80°C 1
Station Stops +80°C +100°C 20
Speed Control +80°C +85°C 3240
Cruise +80°C +81°C 6E6
Traction Application: High Speed.
Traction Application: Mass TransitThere are 4 unique load profiles
Shed stop:
over night storage in extremely cold environment
Station stops:
stop at station during service
Speed control:
action of the automated speed control system
Cruise:
Power ripples when trains are running.
Failure definition:
crack length= 2.8mm, this is equivalent to about 20% area crack.
05 September 2007 The 2nd Annual IeMRC Conference
Traction Control PEM Lifetime prediction
SolderThickness shed speed Station
0.1 mm 6.94E+03 1.25E+09 2.24E+05
0.2 mm 8.26E+03 1.50E+09 2.64E+05
0.3 mm 8.99E+03 1.61E+09 2.84E+05
Predicted lifetime for each single load temperature profile.
solder thickness high speed (years) mass transit (years)
0.1 mm 11.61 0.55
0.2 mm 13.76 0.65
0.3 mm 14.93 0.70
Calculated lifetime for railway traction control applications
•
High speed Application > Mass Transit–
because of the number of station stops.
•
Solder thickness has significant impact.
y = 3.0306Ln(x) + 18.601
10
11
12
13
14
15
16
0.1 0.15 0.2 0.25 0.3solder thickness (mm)
Life
time
(yea
rs)
05 September 2007 The 2nd Annual IeMRC Conference
Conclusions•
Conclusions–
Reliability (PoF)
–
Design Rules•
Linked Projects–
Dti: Design Environment for PEM’s
•
PoF
Models•
Uncertainty Analysis
•
Risk Assessment/Mitigation
–
IeMRC: Prognostics•
In-line monitoring
•
PoF
Based•
Bayesian Analysis
Partial Discharge In Power ElectronicsPartial Discharge In Power Electronics
Ian Cotton, Ningyan Wang, Mike BarnesUniversity of Manchester
Partial Discharge In Power ElectronicsPartial Discharge In Power Electronics
•
Power electronics operating at high voltages can generate partial discharges, small sparks that do not completely bridge the gap between electrodes
•
Over time, the cumulative effect of partial discharges can cause insulation to fail.–
In some insulation systems such as paper-oil, times to failure of thousands of hours are common
–
In some tests of power electronic modules, times to failure of a few minutes have been observed
•
Qualification testing on production can detect partial discharge during manufacture but this can lead to high rejection rates
Work Package FocusWork Package Focus
•
This work package has focused on:
–
Understanding the weak points of a power electronic module in terms of the areas where partial discharge form
–
Developing an understanding of the impact of material ageing and environmental conditions on PD activity
–
Developing a solution to improve yields of high voltage power electronic devices
–
Producing a physics of failure model
GelGel--Substrate Interface TestingSubstrate Interface Testing
•
The weakest area of a power electronic module has been shown to the interface between the substrate and the gel at the edge of the substrate metallisation.
•
This is the location of the highest electric field in the module as shown by the red/yellow colours in the FEA plot
GelGel--Substrate Interface TestingSubstrate Interface Testing
•
The picture below shows a substrate under test. The pattern of the metallisation can be seen. The two bright areas circled are partial discharge as seen by the night vision camera. These would cause failure within a maximum of tens of minutes.
Current WorkCurrent Work
•
Ageing tests are underway to thermally cycle test samples in humid and dry conditions.–
Initial results from the samples cycled in dry conditions show that gels are stable but there is some degradation in performance of gel-substrate interfaces once cycled
–
Based on literature from other researchers, it is thought that humid conditions will show higher levels of degradation
•
A solution to the problem of high levels of partial discharge at the edges of the substrate has been proposed and will shortly undergo production trials to confirm if laboratory work shows promise in a manufacturing environment
Thermal ManagementThermal Management
Rob SkuriatTom Povey
University of Oxford
Current ResearchCurrent Research
•
Passive Cooling–
Closed Loop Pulsating Heat Pipes
•
Active Cooling–
Jet impingement
•
Baseplate•
Directly onto substrate tile
–
Turbulator induced vortex cooling•
Cooler efficiency–
Complete system
Thermal Management OptionsThermal Management Options
•
Target overall reductions in weight and volume for liquid-cooled systems
•
Comparison of cooler options:–
Conventional base-plate and separate cooler
–
Integrated base-plate cooler–
Direct cooler (no base-plate)
Base-plate (1-3mm)
Cold plate Integrated base-plate cooler Direct substrate cooler
9 layers8 interfaces
7 layers6 interfaces
5 layers4 interfaces
Theoretical Performance ComparisonTheoretical Performance Comparison
•
Comparison based on an IGBT switch of 4 parallel 13mm x 13mm dies on a 34mm x 56mm substrate (400A, 1200V)
•
For base-plate designs the area is 53mm x 60mm•
Figure of Merit (FoM) = 1/(Rth x weight)
•
Other factors e.g. cost, Si area not considered
Option Cooling MethodLayers, Interfaces
Rth
(K/W) @ h=20kW/m^
2K
Relative FoM
Base-line (separate cooler) Indirect cold-plate 9, 8 0.139 1.0Cu BP, alumina 0.2/0.3/0.2 Integrated base-plate 7, 6 0.084 3.3Cu-alumina 0.2/0.3/0.2 Direct substrate 5, 4 0.083 8.9
Impingement CoolingImpingement Cooling
•
Impingement cells with array of holes <1mm diameter
•
6 x 8 arrangement of jets within a cell•
Cells arranged in a serpentine pattern
•
Spray water jets onto flat surface•
Jet impingement reduces thermal gradient and thermal resistance
•
Heat transfer coefficient increases
Heat-exchanger
Substrate tileDies
Impingement CoolingImpingement Cooling
•
Baseplate cooler manufactured in Stainless Steel (17-4 PH SS) using the Direct Metal Laser Sintering (DMLS) rapid prototyping process
•
Grooves machined into the baseplate to improve sealing between adjacent cooling cells
•
Cooler mounts directly onto the baseplate
Direct CoolingDirect Cooling
•
Cool back of substrates directly
•
No baseplate required–
Reduces thermal resistance path
–
Reduced mechanical stress on components induced by difference in CTE between DBC components and baseplate
–
Reduced total system mass
High Temperature Metal-Insulator-Metal Capacitor for Power Electronics
Bing Miao, Alton Horsfall, Nick Wright
Newcastle University
High temperature MIM CapacitorsHigh temperature MIM Capacitors
•
Disadvantages of conventional discrete surface mount capacitors-
significant parasitic inductance
-
large area•
Advantages of MIM capacitors developed on sapphire substrate-
placed inside the power package
-
low parasitic inductance-
less space
-
multiplied
blocking voltage
with the multilayer process
Capacitor Structure Capacitor Structure
Sapphire
100nm Al35nm HfO2
65nm Pt5nm Ti
Single layer structure for high temperature MIM capacitor on sapphire substrate.
CC--V Characteristics of CapacitorV Characteristics of Capacitor
-4 -3 -2 -1 -0 1 2 3 4Bias (V)
480500520540560580600620640660680700
Cap
acita
nce
(pF)
1 MHz100 kHz10 kHz
Capacitance density as a function of voltage at 3 different frequencies. The capacitance density at zero bias ranges from 476 to 638 nF/cm2, measured at 1M, 100k and 10k respectively.
0 50 100 150 200 250 300Temperature (oC)
380
400
420
440
460
480
500
520
540
560
Cap
acita
nce
Den
sity
(A c
m-2
)Capacitance density as a function of temperature, ranging from 458 nF/cm2 at room temperature to 662 nF/cm2 at 300 Celsius.
II--V characteristics of capacitorV characteristics of capacitor
0 1 2 3 4 5 6 7 8Bias (V)
10-7
10-6
10-5
10-4
10-3
10-2
10-1
100
101
102
Leak
age
CU
rren
t Den
sity
(A c
m-2
)
50oC100oC200oC250oC300oC
10 60 110 160 210 260 310Temperature (oC)
7
8
9
10
11
12
Brea
kdow
n Vo
ltage
(V)
Leakage current density as a function of applied voltage measured up to 300 Celsius.
Breakdown voltage as a function of temperature measured up to 300 Celsius. The blocking voltages are 12 Volts at room temperature and 8.3 Volts at 300 Celsius.
Future planFuture plan
•
Step 1: Fabrication of single-layer capacitor with larger size to achieve larger capacitance value.
•
Step 2: Fabrication of capacitor directly to one side of sapphire substrate to reduce connection inductance.
•
Step 3: Fabrication of dual layer capacitor on sapphire substrate to increase blocking voltage.
Bottom electrode: 65nm Pt
35nm HfO2
Top electrode: 100nm Al Diode
Capacitor
200nm Au
JFETTop electrode: 100nm Al
Bottom electrode: 65nm Pt
35nm HfO2
Based on the fabrication of the capacitors with small size on sapphire substrate:
Industrial PerspectiveIndustrial Perspective
Paul TaylorDynex Semiconductor Ltd
Dynex Semiconductor LtdDynex Semiconductor Ltd•• Dynex designs and manufactures Dynex designs and manufactures
high power and high reliability high power and high reliability electronic semiconductor electronic semiconductor components.components.
•• Semiconductor production started in Semiconductor production started in Lincoln England in 1957 Lincoln England in 1957
•• Prior trade names:Prior trade names: AEI Semiconductors Ltd : AEI Semiconductors Ltd : AEIAEI Marconi Electronic Devices Ltd: Marconi Electronic Devices Ltd: MEDLMEDL GECGEC--Plessey Semiconductors Ltd: Plessey Semiconductors Ltd:
GPSGPS
•• Turnover Turnover 2005: 2005: ££10.3m10.3m2006: 2006: ££11.3m11.3m2007 plan: 2007 plan: ££13.5m13.5m
•• 220 employees220 employees•• ISO9001 & ISO14001 approvedISO9001 & ISO14001 approved
•• Subsidiary of Dynex Power IncSubsidiary of Dynex Power Inc
–– Ticker symbol DNX on TSX Ticker symbol DNX on TSX Venture ExchangeVenture Exchange
–– More at More at www.dynexsemi.comwww.dynexsemi.com
Four Product GroupsFour Product Groups
•• Integrated circuits , siliconIntegrated circuits , silicon--onon--sapphiresapphire•• Dynex manufactures and supplies radiation tolerant Dynex manufactures and supplies radiation tolerant
integrated circuits to the nuclear and space industry integrated circuits to the nuclear and space industry based on well proven GEC based on well proven GEC --Marconi technology.Marconi technology.
• Power electronic assemblies• Design, build and refurbishment of high power
electronic assemblies. Sub-contract build and test of very sophisticated sub-assemblies for our major Projects Customers.
• Power IGBT and diode modules to 3,600A & 6,500V• Specialising in the high voltage power market: e.g.
industrial drives, renewable energy, marine drives, aircraft, electric vehicle and rail transport. & next generation T&D
• Power bipolar devices to 11,000A & 8,500V• Thyristors, GTOS and diodes for high-power
applications (>100kW) for electric utilities, rail transport, marine drives, industrial processing drives and power supplies
•• Power IGBT and diode modules to 3,600A & 6,500VPower IGBT and diode modules to 3,600A & 6,500V•• Specialising in the high voltage power market: e.g. Specialising in the high voltage power market: e.g.
industrial drives, renewable energy, marine drives, industrial drives, renewable energy, marine drives, aircraft, electric vehicle and rail transport. & next aircraft, electric vehicle and rail transport. & next generation T&Dgeneration T&D
Power ModulesPower Modules
Demand for Power Demand for Power Modules is forecast to Modules is forecast to grow above 15% per year grow above 15% per year over the next five years over the next five years driven bydriven by
Energy SavingsEnergy Savings Electric Vehicles, andElectric Vehicles, and Renewable Energy.Renewable Energy.
Dynex Letter of Support for the ProjectDynex Letter of Support for the Project
……………….. our UK and overseas customers look for .. our UK and overseas customers look for suppliers with access to leading edge technology suppliers with access to leading edge technology and therefore we continually seek opportunities for and therefore we continually seek opportunities for collaborative R&D.collaborative R&D.
Access to overseas R&D can be difficult due to local Access to overseas R&D can be difficult due to local alliances between industry and academia, and so as alliances between industry and academia, and so as a UK based manufacturing facility we are highly a UK based manufacturing facility we are highly dependent on the UK to generate our new dependent on the UK to generate our new technologies. In particular we welcome the focus of technologies. In particular we welcome the focus of the proposed Flagship Project on [module] the proposed Flagship Project on [module] packaging, reliabilitypackaging, reliability……..
Flagship alignment to Dynex interestFlagship alignment to Dynex interest•• The Project contains four Work packages. These are all of The Project contains four Work packages. These are all of
relevance to Dynexrelevance to Dynex–– WP1. Roadmap for Power Electronic ModulesWP1. Roadmap for Power Electronic Modules–– WP2. Power Module Technology QualificationWP2. Power Module Technology Qualification–– WP3. Design for QualificationWP3. Design for Qualification–– WP4. Advanced Manufacturing TechnologiesWP4. Advanced Manufacturing Technologies
•• We have seen the most benefit from the 3rd work package , and We have seen the most benefit from the 3rd work package , and the least from WP1 and WP2the least from WP1 and WP2
•• WP3 is most strongly aligned with our other Projects on power WP3 is most strongly aligned with our other Projects on power module reliability and with our business objectivesmodule reliability and with our business objectives
•• We aim to give a rapid response to our customers when assessing We aim to give a rapid response to our customers when assessing the reliability & life of our power electronic products under ththe reliability & life of our power electronic products under their eir application conditions.application conditions.
•• On reaching its goal, we are looking forOn reaching its goal, we are looking for–– Acceleration curves for reliability assessmentAcceleration curves for reliability assessment–– An understanding of physics of failureAn understanding of physics of failure–– Better design guidelines and the effects of changing materialsBetter design guidelines and the effects of changing materials–– Ultimately, reliability models to replace time consuming testingUltimately, reliability models to replace time consuming testing
SummarySummary•• The flagship is building a solid platform and a focus for power The flagship is building a solid platform and a focus for power
module manufacturing researchmodule manufacturing research
•• Well aligned to UK Industrial Products & Market ApplicationsWell aligned to UK Industrial Products & Market Applications
•• Increasing the understanding of power module requirements Increasing the understanding of power module requirements
across UK academia, and enhancing R&D networksacross UK academia, and enhancing R&D networks
•• Linked to other EPSRC and DTI projectsLinked to other EPSRC and DTI projects
•• Linked to Dynex PV R&D projects and manufacturing Linked to Dynex PV R&D projects and manufacturing
developmentsdevelopments
•• Physics of Failure work is critically important, but may need Physics of Failure work is critically important, but may need
more time to reach a useful conclusionmore time to reach a useful conclusion
SummarySummary
•
IeMRC Flagship project now well established with a comprehensive research programme
•
Excellent working relationship with industrial partners•
A power electronics cluster has been formed around the flagship with total funding exceeding £9 M
•
Project results show substantial potential benefit to UK power electronics manufacturing
•
Experimental reliability programme is revealing gaps in current knowledge
•
Ambition of integrated reliability-based design and health management will require expanded programme
AcknowledgementsAcknowledgements
Paul Taylor, David Newcombe, Kim Evans
Chris Bailey, Tim Tilford, Hua Lu
Simon Hogg
Ian Cotton, Ningyan Wang, Mike Barnes
Bing Miao, Alton Horsfall, Nick Wright
Mark Johnson, Cyril Buttay, Pearl Agyakwa
Rob Skuriat, Tom Povey
Wei-Sun Loh, Martin Corfield
Diary DateDiary Date
•
Power Electronics Road Mapping Event•
Wednesday 31st October 2007
•
PERA Melton Mowbray•
Further information:
www.technologywatch.org.uk/EEP_KTN_RSS/news.html
•
Registration:
www.technologywatch.org.uk/Forms/EEPworkshop.html
