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HPK L1 teststructures. HPK L1 half moon teststructure corresponding to main chips 6,7 Results on Diode C-V Coupling capacitors polysilicon arrays Strip capacitances MOS. R. Bernhard, F. Lehner U Zurich 4/3/03. HPK L1 teststructures. depletion voltage of diode ~110V - PowerPoint PPT Presentation
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HPK L1 teststructures
•HPK L1 half moon teststructure
•corresponding to main chips 6,7
•Results on Diode C-V Coupling capacitors polysilicon arrays Strip capacitances MOS
R. Bernhard, F. LehnerU Zurich4/3/03
HPK L1 teststructures
• depletion voltage of diode ~110V
• Corresponding sensor (HPK-L1 #6,7) depletion voltages: 150V (HPK) 130V (KSU), 110V (FNAL) N.B. depletion voltage of segmented strip detector is ~5-10%
higher than planar diode
C-V L1 diode teststructure
1.00E+031.50E+032.00E+032.50E+033.00E+033.50E+034.00E+034.50E+03
20 40 60 80 100 120 140 160 180
bias (V)
1/C
2 (p
F-2
) 10 kHz
100kHz
500kHz
1 MHz
HPK L1 teststructures
•coupling capacitor test structure
•same length than on sensor: 7.74 cm
•low frequency limit: 115 pF => 14.8 pF/cm (in specs)
coupling capacitor L1 teststructure
0
20
40
60
80
100
120
0.1 1 10 100 1000 10000
frequency (kHz)
C (
pF
)
CC1
CC2
CC3
CC4
HPK L1 teststructures
•CC breakdown ~220-230 V
•similar to HPK-L2
coupling capacitor breakdown
-5.00E-06
-4.00E-06
-3.00E-06
-2.00E-06
-1.00E-06
-1.00E-21
1.00E-06
0 50 100 150 200 250 300
voltage (V)
I (A
)
CC1
CC2
CC3
HPK L1 teststructures
• Aluminum trace teststructure (meander-like)
• length 60 mm
• resistance: 35 Ohm/cm (spec: 30 Ohm/cm)
• HPK-L2: 16 Ohm/cm, smaller due to wider Al traces
Aluminium trace LW6000R=210Ohm, length=6 cm
R/cm = 35 Ohm/cm
-4.E-04
-2.E-04
0.E+00
2.E-04
4.E-04
-0.06 -0.04 -0.02 0.00 0.02 0.04 0.06
U (V)
I (A
)
HPK L1 teststructures
•p+ implant structure
•130 kOhm/cm (on HPK-L2: 104 kOhm/cm)
p-implantR=2605 Ohm, length=0.02 cm
R/cm=130kOhm/cm
-3.E-04
-2.E-04
-1.E-04
0.E+00
1.E-04
2.E-04
3.E-04
-0.60 -0.40 -0.20 0.00 0.20 0.40 0.60
U (V)
I (A
)
HPK L1 teststructures
•numerous polyresistor structures
•different arrays: PS0, PS10, PS20, PS30 and PSH0 – PSH30
•What is the difference? polysilicon material? Processing? doping?
HPK L1 teststructures
• linearity from in range from –5V to +5V given for PS-30 and PS-20 resistor array
• PS-10 and PS-0 have breakdown at ±2V
• in linear region all resistors measured to be 1.05 ± 0.01 Mohm
PSn30
-6.00E-06-4.00E-06-2.00E-060.00E+002.00E-064.00E-066.00E-068.00E-06
-5 -4 -3 -2 -1 0 1 2 3 4 5
U (V)
I (A
)
PS30_1
PS30_3
PSH30_1
PSH30_2
PSH30_3
PSH30_long_1
PSH30_long_3
PSH30_long_5
PSn20
-6.00E-06-4.00E-06-2.00E-060.00E+002.00E-064.00E-066.00E-068.00E-06
-5 -4 -3 -2 -1 0 1 2 3 4 5
U (V)
I (A
)
PS20_1
PS20_3
PSH20_1
PSH20_3
PSH20_long_3
PSH20_long_5
PSn10
-6.00E-06-4.00E-06-2.00E-060.00E+002.00E-064.00E-066.00E-068.00E-06
-5 -4 -3 -2 -1 0 1 2 3 4 5
U (V)
I (A
)
PS10
PSH10_1
PSH10_3
PSH10_long1
PSH10_long2
PSH10_long4
PS-10
-6.00E-06-4.00E-06-2.00E-060.00E+002.00E-064.00E-066.00E-068.00E-06
-5 -4 -3 -2 -1 0 1 2 3 4 5
U (V)
I (A
)
PSH0_1
PSH0_2
PSH0_long_1
PSH0_long_4
HPK L1 teststructures
• Baby detector w/ polysilicon resistors
• R_poly: 0.7 ± 10% Mohm
• R_poly + R_implant: 1.5 ± 10% Mohm implant alone: 130kOhm/cm
1MOhm implant for 7.7 cm strip not fully consistent !
polysilicon on babydetector
-1.50E-05
-1.00E-05
-5.00E-06
0.00E+00
5.00E-06
1.00E-05
-5 -4 -3 -2 -1 0 1 2 3 4 5
U (V)
I (A
)
poly strip 1
poly strip 2
poly strip 3
poly strip 4
polysilicon+implant resistor on L1 babydetector
-3.00E-06
-2.00E-06
-1.00E-06
0.00E+00
1.00E-06
2.00E-06
3.00E-06
-3 -2 -1 0 1 2 3
U (V)
I (A
)
Series1
Series2
Series3
Series4
HPK L1 teststructure
• exact resistance value is difficult to measure, currents are low
• value is irrelevant though, as long as R_inter >> R_poly
• R_inter on babydetector ~ 10 Gohm (?)
interstrip resistance baby detector
0.00E+00
2.00E-11
4.00E-11
6.00E-11
8.00E-11
1.00E-10
-1.4 -1.0 -0.6 -0.2 0.2 0.6 1.0 1.4
U (V)
I (A
)
interstrip 1
interstrip 2
interstrip 3
HPK L1 teststructures
• total strip capacitance includes both neighbors plus backplane capacitance
• capacitance reaches plateau at ~10V
• frequency dependence:
total strip capacitance
0
5
10
15
20
0 30 60 90 120
bias (V)
C_t
ot
(pF
)
1kHz
2kHz
5kHz
10kHz
20kHz
50kHz
100kHz
200kHz
500kHz
1MHz
Capacitance at 1 MHz: ~8.5pFCap/cm: ~1.1 pF/cm
Total strip capacitance (pF)
0
2
4
6
8
10
1 10 100 1000
frequency (kHz)
C_t
ot
(pF
)
Series1
Series2
HPK L1 teststructures
•interstrip capacitance to one neighbor: ~3 pF => 0.39 pF/cm to both neighbors: ~5.5 pF => 0.71 pF/cm
interstrip capacitance
01234567
1 10 100 1000
freq (kHz)
C (
pF
) Cint both
Cint both
Cint one neighbor