High-Voltage (600 V) GaN Power Devices: Status and Benefitsfiles.iccmedia.com/events/powercon17/bangkok_07_infineon.pdf · Th. Detzel, O. Häberlen, A. Bricconi, A. Charles, G. Deboy,

Th. Detzel, O. Häberlen, A. Bricconi, A. Charles, G. Deboy, T. McDonaldInfineon Technologies Austria AG

High-Voltage (600 V) GaN Power Devices:Status and BenefitsPower Electronics Conference 2017Munich Airport Hilton, December 05, 2017

This talk is about …

GaN Devices & Performance Benchmark

G

SK

D

S

Value Proposition & Application Examples

Industrial Implementation: Manufacturing & Quality

22017-12-05 Copyright © Infineon Technologies AG 2017. All rights reserved.

GaN HEMTs available configurationsInfineon chose Emode (normOff)

› Suitable for standard gate drivers› Low Vf body diode› Not ideally suited for multi-chip solutions› Not scalable to low voltage› Complex balance between the two chips

Good but limited in flexibilityand performance

› Excellent for hard and soft switching topologies

› TurnON and TurnOFF optimized› Needed for LV applications› Key for integration at chip and/or

package level

The technology for innovative solutions and high volumes

P Gate Enhancement mode GaN HEMT

D

S

G

Low Voltage Si MOSFET

Depletion-Mode GaN HEMTCascode GaN HEMT

Infineon is focusing on Emode GaN for all consumer and industrial applications, with the most robust and performing concept in the market

ENHANCEMENT MODE GaNCASCODE GaN

G

SK

D

S


Through recessed and regrowth gate technology from Panasonic: Best performance

› Fully recessed 1st barrier› Regrowth of 2nd barrier and

p-GaN layer Excellent Vth stability

› p-GaN structure at drain for dynamic RDSON optimization

Device concept

Hole injection at drain side

Key features

Proceedings of ISPSD 2015 (Hongkong) and ISPSD 2016 (Prague)


Comparison of key Figures-of-Merit for Si, GaN and SiC devices

Device Rating[V]

RDS[mΩ]

RDS*QOSS[mΩµC]

RDS*QRR[mΩµC]

RDS*EOSS[mΩµJ]

RDS*QG[mΩnC]

VF@15A[V]

Si SJ [1] 600 57 22.6 32.5 440 3800 1.0

GaN eMode [2] 600 55 2.2 0 350 320 2.7

GaN Cascode [3] 600 52 3.8 7.0 730 1460 1.4

SiC DMOS [4] 900 65 4.5 8.5 570 1950 2.7

SiC TMOS [5] 650 60 3.8 3.3 540 3480 3.3

[1] Infineon CoolMOS IPP60R070CFD7 Datasheet [2] Infineon CoolGaN Preliminary Values (Qrr excl. of Qoss)[3] TransPhorm TPH3205WS Datasheet [4] Wolfspeed C3M0065090J Datasheet[5] Rohm SCT3060AL DatasheetAll numbers are typical values extracted from data sheet at 25°C


2017: eMode GaN sets the performance benchmark among currently available 600 V devices

10

100

1000

10000

1 10 100 1.000

Out

put

capa

cita

nce

Cos

s [p

F]

Drain-Source voltage VDS [V]

8 mOhm*cm² SJ tech.

24 mOhm*cm² SJ tech.

38.5 mOhm*cm² SJ tech.

GaN HEMT

GaN HEMTs offer a very linear output capacitance curve; 190 mOhm, 600 V devices

lower Eoss

longer delay times

S G D

2DEG


Industrial Implementation: Manufacturing

Infineon Technologies Austria AG VillachLead site for development and manufacturing of power semiconductors at Infineon

2015: Awarded the most efficient production plant in Austria

1,800 product types35 technology families16,3 billion chips (FY 2016)Wafer diameters:150, 200, 300 mmMaterials: Si, SiC, GaN

22,000 m²clean room area


Advanced R&D eco-system and development partnerships make GaN a reality

› 39 Partners

› 9 Countries

› 87 million € Cost

› 37 million € Grant

› 6028 Person months

› 8 Work packages

› Time line 2015 - 2018


PowerBase – Enhanced substrates and GaN pilot lines enabling compact power applications

PowerBase goes beyond state-of-the-art:Most advanced GaN epi and devices

150 mm GaN process pilot line › Norm-On process line established› Contact resistance Rc < 0.5 Wmm› Off-State leakage Idss < 100 nA/mm› Mechanical yield > 90%

Advanced Process Modules› Norm-Off process established› Fully recessed 1st barrier› Regrowth of 2nd barrier and p-GaN

layer Excellent Vth stability

› Installation of a full scale industrial manufacturing line for large wafer diameter GaN-on-Si technology including the GaN hetero epitaxy on silicon wafers for normally-on and normally-off power transistors with a wide range of voltage classes up to 600 V.

› This WP lays the foundation for an European high volume manufacturing base for advanced GaN power electronics.

› Breakdown voltage > 1000 V› Wafer bow (std. thickness) < 50 µm› Dynamic Ron @600 V < 10%

GaN-on-Si hetero epitaxy pilot line


Industrial Implementation:Quality

SiMature technology

GaNStandards yet to be defined

Reliability: Differences vs. well-known Silicon devices are in focus

S G

D

p n

p+n+ S

G D

Gate oxide dielectric stressed by HTGB test

p-n body diode and termination stressed during HTRB

Top aluminum metal and wire bonds stressed during temperature cycling (TC)

Passivation and mould compound stressed by Temperature, Humidity and Bias (THB)and autoclave (AC) tests

1

2

3

4

1

23 4

2DEG channel and GaN buffer stressed by HTRB and IOL tests

Top interlevel dielectrics, top metal and wire bonds stressed during TC

Reliability testing tailored to the GaN material system

1

1

2

Passivation and mould compound stressed by THB and AC tests

2

Gate module stressed by HTGB test

3

34

4

Si

GaN

And many more …


𝐿𝐿 𝑡𝑡 = 𝐴𝐴 ∗ 𝑒𝑒−𝛾𝛾𝛾𝛾 ∗ 𝑒𝑒𝐸𝐸𝑎𝑎𝑘𝑘𝑘𝑘

Life Time Model:

Lifetime requirement:< 1 FIT for 15 years at 480 V, 125 °C

› Very tight distribution (high ß good process control)› The conservative model predicts a lifetime of ~55 years at 1 FIT,

480 V and 125 °C› > 3X safety margin

Lifetime testing – CoolGaNTM 70 mΩ-TOLLLifetime projection at 480 V & 125 °C

JEDEC testing 3 x 77 parts, 480 V, 1000 h


1 FIT

Dynamic RDS(on): How to test?

› As implicated by it's name dynamicRDS(on) testing is strongly dependenton timing as the trapped chargesrelax with time

› Competition is typically givingdynRDS(on) data measured 2.5 µsafter turn-on for 400 V

› For hundreds of kHz up to MHz switching this is not enough

› E.g. 40% dynRDS(on) turns a 35 mΩdevice into a 50 mΩ one

› Infineon's CoolGaN has been characterized down to 100 ns fora full 600 V blocking with no dynRDS(on) increase

› We have 100% test coverage with 600 V / 700 ns

Infineon CoolGaN


Dynamic RDS(on) 600 V CoolGaN™ technology reliability – Application level test example

Dyn. RDS(on) measured real time during hard switching! At full rate


True application measurements taken a few hundreds ns after hard switching device turn on! Still no impacts on datasheet!

-10%

0%

10%

20%

30%

40%

50%

60%

70%

100 200 300 400 500 600

Percent Dynamic RDS(ON) shift vs. applied voltage

Competitor X Infineonapplied voltage (Volts)

Infineon measurement: Some competitor parts show increase in dyn. RDSON above 400V

Perc

ent

by w

hich

Rds

(on)

shi

fts

Published data for competitor listed as 0% up to 400V (no data > 400V) Negligible shift at full

rated voltage

Data taken at 25°C, with 700ns delay after device turns on

Device level stress with application related test setup

PFC ruggedness test system is used to prove reliable performance of GaN technology under application conditions

Ω

Ω


Application-related reliability test concept for GaN HEMT power devices established

How to assure device reliabilityunder application conditions?

› JEDEC qualification – TC, HTRB, IOL …

› Lab testing – SOA, double pulse …

› Customer life test @ system level

› Device level stress testing withapplication related test setup

Control module

PWM Guard Switch

Power Supply

Active Load GaN

GaN

External devices

Application board GaN test board

I IN

I OUT

I SENS V SENS

Blocking Diodes

HostPC

Ethernet

Totem Pole PFC – Boost stage700 V / 20 A / 250 kHz max.


Value Proposition & Application Examples

PFC – GaN enables simpler and more efficient topologies

Interleaved Stages Dual Boost

HB TOTEMPOLE FB TOTEMPOLE

Nowadays, several high efficiency topologies for CCM PFC are available. BOM costs and part count depend on efficiency targets

Q3

400 V

AC IN

Q4

L1Q1

Q2

D1

400 V

AC IN

D2

L1Q1

Q2

Q1

D1

L1

AC IN

D2

Q2

L2

Cbus

Bridge Rectifier

Q1

D1

L1AC IN

D2

Q2

L2

Cbus

D3 D4

GaN has zero Qrr

Body diode (Qrr)

prevents half bridge topologies

GaN technology enables to use simpler and cost effective HalfBridge / Hard switchingtopologies and at the same time to achieve higher efficiency

The investment on GaN has a compelling payback which allows to absorb very rapidly the initial higher costs of GaN switches


FLAT EFFICIENCY> 99% over wide load range

Performance of Full-Bridge PFC

Q3

400 V

AC IN

Q4

L1Q1

Q2

FB TOTEMPOLE

› 2x 70 mOhm CoolGaN™in DFN8x8

› 2x 33mOhm CoolMOS™

(2x 1EDI for GaN)(2x Driver IC for CoolMOS)

MEASURED VALUESAll available boards within +/- 0.1%

Efficiency vs Load (fsw = 45kHz) *

IGLD60R070D1

* No external power supplies – everything included. Vin = 230 V ac, Vout = 390 V dc, t = 25 °C Ambient


Typical application example: High-Power SMPS


Totem-Pole Full-Bridge PFC Stage LLC Resonant DC-DC with Sync Rectifier

CoolGaN™ Half-bridge + CoolMOS™ Half-bridge

OptiMOS™ Sync-Rect(LV GaN in development)CoolGaN™ Full-bridge

Actual power density of mobile chargers …

Source: X.Huang, F. Lee, Q. Li, "High efficiency high density GaN based AC/DC adapter" Power management consortium meeting, Santa Clara, Aug 2016


… can be doubled with GaN

24 W/in3

93.5% efficiency@ 90 V AC

10

5

20

15


Source: X.Huang, F. Lee, Q. Li, "High efficiency high density GaN based AC/DC adapter" Power management consortium meeting, Santa Clara, Aug 2016

Conclusion

Infineon's reliable CoolGaN™ is ready for the mass market now

› GaN will enable a significant step forward towards energy efficiencyand size & weight reduction in a variety of applications

› Emode (normOFF) will likely be the ultimate concept to exploit full potential of GaN, targeting innovative, integrated solutions in the long term

› Key GaN device FOM's are demonstrated with 10x improvement over silicon (Qoss, Qg) and zero Qrr

› Stable 6" GaN epitaxy and device processes are available in Si power fab

› Infineon is committed to maintaining its differentiating quality standards in new technologies such as GaN without compromise on quality and reliability


Acknowledgement


The project "PowerBase" has received funding from the Electronic Component Systems for European Leadership Joint Undertaking under grant agreement No 662133.

This Joint Undertaking receives support from the European Union's Horizon 2020 research and innovation program and from Austria, Belgium, Germany, Italy, Netherlands, Norway, Slovakia, Spain and the United Kingdom.

A big Thank You to all colleagues and partners involved in Infineon's GaN program!

Technology RDSon[typ mΩ]

RDS*QOSS[mΩµC]

RDS*QRR[mΩµC]

RDS*EOSS[mΩµJ]

RDS*QG[mΩnC]

600 V Lateralp-gate HEMT 55 2.2 0 350 320

Summary of GaN benefits

› Fast and (near) losslessswitching

› 10x higher breakdown fieldand 2x higher mobility

› Very low RDS(on) and largecost-down potential

› 10x lower output charge

› Zero reverse recovery charge

› 10x lower gate charge andlinear Coss characteristic

› Better efficiency inresonant circuits

› New topologies andcurrent modulation


Documents

High-Voltage (600 V) GaN Power Devices: Status and Benefitsfiles.iccmedia.com/events/powercon17/bangkok_07_infineon.pdf · Th. Detzel, O. Häberlen, A. Bricconi, A. Charles, G. Deboy,