Heterojunction Bipolar Transistor Technology (InGaP HBT ... · MMG3006NT1 1 RF Device Data NXP Semiconductors Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High

MMG3006NT1

1RF Device DataNXP Semiconductors

Heterojunction Bipolar TransistorTechnology (InGaP HBT)Broadband High Linearity AmplifierThe MMG3006NT1 is a general purpose amplifier that is internally input

prematched and designed for a broad range of Class A, small--signal, highlinearity, general purpose applications. It is suitable for applications withfrequencies from 400 to 2400 MHz such as cellular, PCS, WLL, PHS,VHF, UHF, UMTS and general small--signal RF.

Features Frequency: 400--2400 MHz P1dB: 33 dBm @ 900 MHz Small--signal gain: 17.5 dB @ 900 MHz Third order output intercept point: 49 dBm @ 900 MHz Single 5 V supply Internally input prematched to 50 ohms

400--2400 MHz, 17.5 dB33 dBm

InGaP HBT GPA

MMG3006NT1

QFN 4 4--16L

Table 1. Typical Performance (1)

Characteristic Symbol900MHz

1960MHz

2140MHz Unit

Small--Signal Gain(S21)

Gp 17.5 14 14 dB

Input Return Loss(S11)

IRL --8 --9 --12 dB

Output Return Loss(S22)

ORL --13 --14 --18 dB

Power Output @1dBCompression

P1db 33 33 33 dBm

Third Order OutputIntercept Point

OIP3 49 49 49 dBm

1. VDC = 5 Vdc, TA = 25C, 50 ohm system, application circuittuned for specified frequency.

Table 2. Maximum Ratings

Rating Symbol Value Unit

Supply Voltage VDC 6 V

Supply Current IDC 1400 mA

RF Input Power Pin 28 dBm

Storage Temperature Range Tstg --65 to +150 C

Junction Temperature TJ 175 C

Table 3. Thermal Characteristics

Characteristic Symbol Value (2) Unit

Thermal Resistance, Junction to CaseCase Temperature 89C, 5 Vdc, 850 mA, no RF applied

RJC 7.8 C/W

2. Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.

Document Number: MMG3006NT1Rev. 6, 12/2017

NXP SemiconductorsTechnical Data

2008, 2010–2011, 2014, 2017 NXP B.V.

2RF Device Data

NXP Semiconductors

MMG3006NT1

Table 4. Electrical Characteristics (VDC = 5 Vdc, 900 MHz, TA = 25C, 50 ohm system, in NXP Application Circuit)

Characteristic Symbol Min Typ Max Unit

Small--Signal Gain (S21) Gp 16.5 17.5 — dB

Input Return Loss (S11) IRL — --8 — dB

Output Return Loss (S22) ORL — --13 — dB

Power Output @ 1dB Compression P1dB — 33 — dBm

Third Order Output Intercept Point OIP3 — 49 — dBm

Noise Figure NF — 6.6 — dB

Supply Current IDC 760 850 960 mA

Supply Voltage VDC — 5 — V

Table 5. Functional Pin Description

NamePin

Number Description

VBA 1 Bias voltage supply.

RFin 2, 3, 4 RF input for the power amplifier. This pin is DC--coupled andrequires a DC--blocking series capacitor.

RFout/VCC

9, 10,11, 12

RF output for the power amplifier. This pin is DC--coupledand requires a DC--blocking series capacitor.

VCC 16 Collector voltage supply.

GND BacksideCenterMetal

The center metal base of the QFN package provides bothDC and RF ground as well as heat sink contact for thepower amplifier.

Table 6. ESD Protection Characteristics

Test Conditions/Test Methodology Class

Human Body Model (per JESD 22--A114) 1C

Machine Model (per EIA/JESD 22--A115) A

Charge Device Model (per JESD 22--C101) IV

Table 7. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit

Per JESD 22--A113, IPC/JEDEC J--STD--020 1 260 C

Table 8. Ordering Information

Device Tape and Reel Information Package

MMG3006NT1 T1 Suffix = 1,000 Units, 12 mm Tape Width, 13--inch Reel QFN 4 4--16L

Figure 1. Pin Connections

(Top View)

VBA

VCC

RFout/VCC

RFin

5 6 7 8

16 15 14 13

1

2

3

4

12

11

10

9

RFout/VCC

RFout/VCC

RFout/VCC

RFin

RFin

N.C. N.C. N.C.

N.C. N.C. N.C.N.C.

MMG3006NT1


50 OHM TYPICAL CHARACTERISTICS

20

55

45

40

35

30

25

50

3515 20 25

Pout, OUTPUT POWER (dBm)

Figure 2. Third Order Output Intercept Pointversus Output Power and Supply Current

IP3,THIRDORDER

OUTPUTINTERCEPTPOINT(dBm

)

VDC = 5 Vdcf1 = 1829 MHzf2 = 1830 MHz

IDC = 850 mA720 mA

570 mA

NOTE: Supply current is varied under external resistor control. Peak poweris not reduced at any listed current. Similar results can be obtained for otherfrequency bands.

30 150103

106

120

Figure 3. MTTF versus Junction Temperature

104

125 130 135 140 145

TJ, JUNCTION TEMPERATURE (C)

NOTE: The MTTF is calculated with VDC = 5 Vdc, IDC = 850 mA

MTTF(YEARS) 105

4RF Device Data

NXP Semiconductors

MMG3006NT1

50 OHM APPLICATION CIRCUIT: 900 MHz

RFOUTPUT

Figure 4. 50 Ohm Test Circuit Schematic

Z1 0.140 x 0.028 MicrostripZ2, Z9, Z10 0.044 x 0.028 MicrostripZ3 0.169 x 0.028 MicrostripZ4 0.177 x 0.028 MicrostripZ5 0.026 x 0.053 Microstrip

Z6 0.026 x 0.089 MicrostripZ7 0.167 x 0.028 MicrostripZ8 0.178 x 0.028 MicrostripZ11 0.096 x 0.028 MicrostripPCB Isola FR408, 0.014, r = 3.7

RFINPUT

R1

L1

R3

VSUPPLY

16

DUT

Z6

C2

Z7

15 14

1

2

3

4

13

12

11

10

9

5 6 7 8

Current Mirror

C8

C1

Z1 Z2 Z3

C9

Z4

C3 C4

R2

C5 C6 C7

C10

Z8

C11

Z11Z5 Z10Z9

Table 9. 50 Ohm Test Circuit Component Designations and ValuesPart Description Part Number Manufacturer

C1, C2 15 pF Chip Capacitors ECUV1H150JCV Panasonic

C3, C6 0.01 F Chip Capacitors C0603C103J5RAC Kemet


C5 2.2 F Chip Capacitor T491A225K016AT Kemet

C8 6.8 pF Chip Capacitor 06035J6R8BS AVX

C9, C11 3.9 pF Chip Capacitors 06035J3R9BS AVX


L1 15 nH Chip Inductor 1008CS--150XJB Coilcraft

R1 100 , 1/4 W Chip Resistor ERJ8GEYJ101V Panasonic

R2, R3 0 , 1/10 W Chip Resistors CRCW06030000FKEA Vishay

MMG3006NT1



Figure 5. 50 Ohm Test Circuit Component Layout

R2

MMG3006N Rev. 4

RFin RFout

VSUPPLYVBA

C3

C4

R1

C5

C6

C7

L1R3

C10 C11C9C8

C1

C2

6RF Device Data

NXP Semiconductors

MMG3006NT1

50 OHM TYPICAL CHARACTERISTICS: 900 MHz

10

20

840

f, FREQUENCY (MHz)

Figure 6. Small--Signal Gain (S21) versusFrequency

VDC = 5 Vdc

16

12Gp,SM

ALL--SIGNAL

GAIN(dB)

TC = --40C18

14

870 900 930 960

25C85C

--10

--5

f, FREQUENCY (MHz)

Figure 7. Input Return Loss (S11) versusFrequency

--9IRL,INPUTRETURNLOSS

(dB)

--7

--6

--8

VDC = 5 Vdc

TC = --40C

25C85C

840 870 900 930 960

--25

--5

f, FREQUENCY (MHz)

Figure 8. Output Return Loss (S22) versusFrequency

ORL,OUTPUTRETURNLOSS

(dB)

--15

--10

--20

VDC = 5 Vdc

TC = --40C

25C85C

840 870 900 930 96020

40

30

25

f, FREQUENCY (MHz)

Figure 9. P1dB versus Frequency

P1dB,1dB

COMPRESSIONPOINT(dBm

)

35

840 870 900 930 960

VDC = 5 Vdc

TC = --40C

42

52

50

48

46

44

840 870 900 930 960

f, FREQUENCY (MHz)

Figure 10. Third Order Output InterceptPoint versus Frequency

IP3,THIRDORDER


)

VDC = 5 Vdc1 MHz Tone Spacing

TC = --40C 25C

85C

0

10

f, FREQUENCY (MHz)

Figure 11. Noise Figure versus Frequency

6

4

2

NF,NOISEFIGURE(dB)

840 870 900 930 960

VDC = 5 Vdc

TC = 85C

25C

--40C

8

85C

25C

MMG3006NT1



32

--55

--25

24


Figure 12. IS--95 Adjacent Channel Power Ratioversus Output Power

--40

--45

--50

302826

ACPR,ADJACENTCHANNEL

POWER

RATIO(dBc)

TC = --40C25C

85C

32

--60

--35

24



--40

--45

--50

302826


POWER

RATIO(dBc)

25C

VDC = 5 Vdc, f = 900 MHzSingle--Carrier IS--95, 9 Channel Forward750 kHz Measurement Offset30 kHz Measurement Bandwidth


--35

--30

--30

--55

TC = --40C

85C

8RF Device Data

NXP Semiconductors

MMG3006NT1


RFOUTPUT


Z1, Z11 0.140 x 0.028 MicrostripZ2 0.268 x 0.028 MicrostripZ3 0.084 x 0.028 MicrostripZ4 0.038 x 0.028 MicrostripZ5 0.026 x 0.053 MicrostripZ6 0.026 x 0.089 Microstrip


RFINPUT

R1

L1

R3

VSUPPLY

16

DUT

Z6

C2

Z7

15 14

1

2

3

4

13

12

11

10

9

5 6 7 8

C8

C1

Z1 Z2 Z3

C9

Z4

C3 C4

R2

C5 C6 C7

C10

Z8

C11

Z9 Z10 Z11Z5Current Mirror






C8, C9 3.0 pF Chip Capacitors 06035J3R0BS AVX






MMG3006NT1




R2

MMG3006N Rev. 4

RFin RFout

VSUPPLYVBA

C3

C4

R1

C5

C6

C7

L1R3

C10 C11C9C8

C1

C2

10RF Device Data

NXP Semiconductors

MMG3006NT1


8

18

1900

f, FREQUENCY (MHz)


VDC = 5 Vdc

16

Gp,SM

ALL--SIGNAL

GAIN(dB)

TC = --40C

25C85C

14

1930 1960 1990 2020

--11

--6

f, FREQUENCY (MHz)


--10IRL,INPUTRETURNLOSS

(dB)

--9

VDC = 5 Vdc

TC = --40C

25C 85C

--25

--5

f, FREQUENCY (MHz)



(dB)

--15

--10

--20

VDC = 5 Vdc

TC = --40C

25C85C

20

40

30

25

f, FREQUENCY (MHz)


P1dB,1dB


)

35

VDC = 5 Vdc

TC = --40C

25C85C

42

52

50

48

46

44

f, FREQUENCY (MHz)


IP3,THIRDORDER


)


TC = --40C

25C

85C

0

10

f, FREQUENCY (MHz)


6

4

2

NF,NOISEFIGURE(dB)

VDC = 5 Vdc

TC = 85C

25C--40C

8

12

10

1900 1930 1960 1990 2020

--7

--8

1900 1930 1960 1990 2020 1900 1930 1960 1990 2020

1900 1930 1960 1990 2020 1900 1930 1960 1990 2020

MMG3006NT1



--55

--30

24



--40

--45

--50

2826


POWER

RATIO(dBc)

32

--70

--40

20



--50

--60

--65

28262422


POWER

RATIO(dBc)

28

--65

--30


Figure 24. Single--Carrier W--CDMA AdjacentChannel Power Ratio versus Output Power

--35

--40

--50

--60

26242220

VDC = 5 Vdc, f = 1960 MHzSingle--Carrier W--CDMA, 3.84 MHz Channel BandwidthInput Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)


POWER

RATIO(dBc)



TC = --40C 25C

85C

TC = --40C

25C

85C

--30

--35

--45

--55

30

--55

--45

TC = --40C 25C

85C

--35

22 30 32

12RF Device Data

NXP Semiconductors

MMG3006NT1


RFOUTPUT


Z1 0.096 x 0.028 MicrostripZ2 0.044 x 0.028 MicrostripZ3 0.352 x 0.028 MicrostripZ4 0.038 x 0.028 MicrostripZ5 0.026 x 0.053 MicrostripZ6 0.026 x 0.089 Microstrip


RFINPUT

R1

L1

R3

VSUPPLY

16

DUT

Z6

C2

Z7

15 14

1

2

3

4

13

12

11

10

9

5 6 7 8

Current Mirror

C8

C1

Z1 Z2 Z3

C9

Z4

C3 C4

R2

C5 C6 C7

C10

Z8 Z9 Z10Z5












MMG3006NT1




R2

MMG3006N Rev. 4

RFin RFout

VSUPPLYVBA

C3

C4

R1

C5

C6

C7

L1R3

C10C9C8

C1C2

14RF Device Data

NXP Semiconductors

MMG3006NT1


8

18

2080

f, FREQUENCY (MHz)


VDC = 5 Vdc

16

Gp,SM

ALL--SIGNAL

GAIN(dB)

TC = --40C

25C85C

14

2110 2140 2170 2200

--35

--15

f, FREQUENCY (MHz)


IRL,INPUTRETURNLOSS

(dB)

--30

VDC = 5 Vdc

TC = --40C

25C

85C

--25

--5

f, FREQUENCY (MHz)



(dB)

--15

--10

--20

VDC = 5 Vdc

TC = --40C

25C85C

20

40

30

25

f, FREQUENCY (MHz)


P1dB,1dB


)

35

VDC = 5 Vdc

TC = --40C

25C

85C

42

52

50

48

46

44

f, FREQUENCY (MHz)


IP3,THIRDORDER


)


TC = --40C

25C

85C

0

10

f, FREQUENCY (MHz)


6

4

2

NF,NOISEFIGURE(dB)

VDC = 5 Vdc

TC = 85C

25C

--40C

8

12

10

--20

--25

2080 2110 2140 2170 2200

2080 2110 2140 2170 22002080 2110 2140 2170 2200

2080 2110 2140 2170 2200 2080 2110 2140 2170 2200

MMG3006NT1



32

--55

--30

22



--40

--45

--50

30282624


POWER

RATIO(dBc)

TC = --40C

25C

32

--70

--40

20



--50

--60

--65

30262422


POWER

RATIO(dBc)

28

--65

--30

20


Figure 35. Single--Carrier W--CDMA AdjacentChannel Power Ratio versus Output Power

--35

--40

--50

--60

262422

VDC = 5 Vdc, f = 2140 MHzSingle--Carrier W--CDMA, 3.84 MHz Channel BandwidthInput Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)


POWER

RATIO(dBc)



--35

85C--55

--45

--35

--30

28

TC = --40C

25C 85C

--55

--45TC = --40C

25C 85C

16RF Device Data

NXP Semiconductors

MMG3006NT1


Table 12. Common Emitter S--Parameters (VDC = 5 Vdc, TA = 25C, 50 Ohm System)

fMHz

S11 S21 S12 S22

|S11| |S21| |S12| |S22|

250 0.821 --173.7 2.816 143.3 0.00597 --61.7 0.922 --179.0

300 0.841 --174.5 2.643 137.3 0.00514 --56.7 0.922 --178.9

350 0.860 --175.2 2.471 132.0 0.00455 --51.6 0.922 --179.1

400 0.872 --175.3 2.309 127.6 0.00435 --44.2 0.921 --180.0

450 0.889 --176.1 2.149 124.2 0.00371 --46.7 0.924 --179.4

500 0.900 --177.0 2.030 120.3 0.00331 --40.6 0.924 --179.6

550 0.909 --177.9 1.908 116.9 0.00306 --35.3 0.925 --179.4

600 0.917 --178.8 1.796 113.8 0.00286 --30.6 0.925 --179.4

650 0.924 --179.6 1.695 110.8 0.00269 --25.9 0.924 --179.6

700 0.930 179.6 1.605 108.2 0.00258 --20.7 0.923 --179.5

750 0.935 178.9 1.522 105.8 0.00248 --15.9 0.922 --179.6

800 0.939 178.2 1.448 103.4 0.00243 --11.1 0.921 --179.8

850 0.943 177.5 1.380 101.3 0.00240 --6.6 0.920 --179.9

900 0.946 176.9 1.320 99.2 0.00239 --2.2 0.919 180.0

950 0.949 176.3 1.266 97.2 0.00239 1.8 0.918 179.9

1000 0.951 175.7 1.216 95.2 0.00242 5.4 0.918 179.6

1050 0.953 175.2 1.172 93.4 0.00246 8.8 0.918 179.5

1100 0.954 174.6 1.133 91.5 0.00250 11.9 0.917 179.3

1150 0.956 174.1 1.098 89.7 0.00255 14.1 0.917 179.0

1200 0.957 173.6 1.067 87.8 0.00261 16.7 0.916 178.8

1250 0.958 173.1 1.039 86.0 0.00268 18.6 0.915 178.6

1300 0.958 172.6 1.015 84.3 0.00275 19.9 0.915 178.3

1350 0.958 172.2 0.994 82.4 0.00282 21.4 0.914 177.9

1400 0.959 171.7 0.978 80.5 0.00292 22.6 0.913 177.6

1450 0.958 171.3 0.964 78.5 0.00299 23.5 0.913 177.3

1500 0.957 170.9 0.952 76.5 0.00306 23.9 0.912 177.1

1550 0.957 170.5 0.945 74.3 0.00316 24.2 0.912 176.7

1600 0.955 170.0 0.941 72.0 0.00324 24.3 0.911 176.5

1650 0.954 169.7 0.941 69.6 0.00332 23.7 0.910 176.2

1700 0.951 169.2 0.944 67.0 0.00340 23.3 0.909 175.8

1750 0.949 168.8 0.951 64.1 0.00348 22.3 0.907 175.5

1800 0.945 168.4 0.969 60.9 0.00360 21.0 0.906 175.2

1850 0.942 168.1 0.975 57.4 0.00361 19.4 0.905 175.0

1900 0.937 167.7 0.985 53.5 0.00364 16.9 0.903 174.6

1950 0.932 167.3 0.999 49.0 0.00363 14.0 0.902 174.4

2000 0.925 166.9 1.016 43.7 0.00357 9.9 0.901 174.1

2050 0.918 166.4 1.034 37.5 0.00346 5.4 0.902 173.8

2100 0.910 166.0 1.048 30.2 0.00322 --0.4 0.903 173.4

2150 0.904 165.6 1.053 21.7 0.00290 --6.9 0.905 173.2

2200 0.900 165.2 1.038 11.9 0.00242 --13.5 0.910 172.9

2250 0.902 164.9 0.995 1.2 0.00178 --19.1 0.916 172.5

2300 0.910 164.4 0.922 --10.0 0.00104 --18.2 0.925 172.2

2350 0.924 164.1 0.823 --20.9 0.000474 24.3 0.933 171.9

(continued)

MMG3006NT1



Table 12. Common Emitter S--Parameters (VDC = 5 Vdc, TA = 25C, 50 Ohm System) (continued)

fMHz

S11 S21 S12 S22

|S11| |S21| |S12| |S22|

2400 0.938 163.7 0.711 --30.9 0.000864 82.0 0.938 171.7

2450 0.952 163.3 0.600 --39.7 0.00152 86.3 0.943 171.4

2500 0.963 162.9 0.498 --47.0 0.00207 84.0 0.945 171.1

2550 0.970 162.5 0.408 --53.1 0.00253 80.0 0.946 170.8

2600 0.976 162.1 0.332 --58.0 0.00287 76.4 0.947 170.4

2650 0.981 161.6 0.268 --61.9 0.00316 73.4 0.945 169.0

2700 0.983 161.2 0.215 --64.8 0.00340 71.2 0.944 168.3

2750 0.986 160.8 0.170 --66.7 0.00361 69.2 0.943 167.4

2800 0.988 160.5 0.132 --67.6 0.00382 67.5 0.941 166.5

2850 0.988 160.0 0.101 --66.9 0.00402 66.1 0.940 165.9

2900 0.989 159.6 0.075 --64.1 0.00418 64.8 0.939 165.1

2950 0.990 159.2 0.053 --57.4 0.00438 63.4 0.938 164.5

3000 0.990 158.8 0.037 --43.3 0.00455 62.3 0.937 163.9

18RF Device Data

NXP Semiconductors

MMG3006NT1

Figure 36. PCB Pad Layout for 16--Lead QFN 4 4

0.65

0.40

0.65

3.00 4.30

2.5 2.5 solder pad withthermal via structure. Alldimensions in mm.

Figure 37. Product Marking

M06NWLYW

MMG3006NT1


PACKAGE DIMENSIONS

20RF Device Data

NXP Semiconductors

MMG3006NT1

MMG3006NT1


22RF Device Data

NXP Semiconductors

MMG3006NT1

PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS

Refer to the following resources to aid your design process.

Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers

AN3100: General Purpose Amplifier Biasing

AN3778: PCB Layout Guidelines for PQFN/QFN Style Packages Requiring Thermal Vias for Heat Dissipation

Software .s2p File

Development Tools Printed Circuit Boards

For Software and Tools, do a Part Number search at http://www.nxp.com, and select the “Part Number” link. Go to Software& Tools on the part’s Product Summary page to download the respective tool.

FAILURE ANALYSIS

At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. Incases where NXP is contractually obligated to perform failure analysis (FA) services, full FA may be performed by thirdparty vendors with moderate success. For updates contact your local NXP Sales Office.

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

0 Jan. 2008 Initial Release of Data Sheet

1 Mar. 2008 Corrected Table 7, Moisture Sensitivity Level Rating from 3 to 1, p. 3

Corrected S--Parameter table frequency column label to read “MHz” versus “GHz”, pp. 17, 18

2 Mar. 2008 Corrected Tape and Reel information from 330 mm to 12 mm, p. 1

Corrected Figs. 24, 35, Single--Carrier W--CDMA Adjacent Channel Power Ratio versus Output Powery--axis (ACPR) unit of measure to dBc, pp. 12, 16

3 May 2010 Added new Fig. 3, Third Order Output Intercept Point versus Output Power and Supply Current,p. 4

Added AN3778, PCB Layout Guidelines for PQFN/QFN Style Packages Requiring Thermal Vias for HeatDissipation, Application Notes, p. 23

Added .s2p File availability to Product Software, p. 23

4 Jan. 2011 Corrected temperature at which ThetaJC is measured from 25C to 89C and added “no RF applied” toThermal Characteristics table to indicate that thermal characterization is performed under DC test with noRF signal applied, p. 1

Removed IDC bias callout from Table 10, Common Source S--Parameters heading as bias is not acontrolled value, pp. 17--18

Added Printed Circuit Boards availability to Development Tools, p. 23

5 Sept. 2014 Table 2, Maximum Ratings: updated Junction Temperature from 150C to 175C to reflect recent testresults of the device, p. 1

Table 6, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESDratings are characterized during new product development but are not 100% tested during production. ESDratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitivedevices, p. 2

Removed Fig. 2, Collector Current versus Bias Voltage at Pin #1, p. 3

Added Fig. 38, Product Marking, p. 18

Added Failure Analysis information, p. 22

(continued)

MMG3006NT1


REVISION HISTORY (cont.)

Revision Date Description

6 Dec. 2017 Fig. 37, Product Marking: updated to show location of Pin 1 on Product Marking and updated date code lineto reflect improved traceability information, p. 18

24RF Device Data

NXP Semiconductors

MMG3006NT1

How to Reach Us:

Home Page:nxp.com

Web Support:nxp.com/support

Document Number: MMG3006NT1Rev. 6, 12/2017

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